CN106191776A - A kind of preparation method of molybdenum alloy barium titanate film - Google Patents
A kind of preparation method of molybdenum alloy barium titanate film Download PDFInfo
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- CN106191776A CN106191776A CN201610690531.7A CN201610690531A CN106191776A CN 106191776 A CN106191776 A CN 106191776A CN 201610690531 A CN201610690531 A CN 201610690531A CN 106191776 A CN106191776 A CN 106191776A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/028—Physical treatment to alter the texture of the substrate surface, e.g. grinding, polishing
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
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Abstract
The invention discloses the preparation method of a kind of molybdenum alloy barium titanate film, the method can reach the purpose significantly improving and controlling materials microstructure structure, and multi-layer film structure not only can hinder the migration of Lacking oxygen, it is also possible to increases BaTiO3Pellicular front internal pressure stress, therefore can play and reduce dielectric loss and improve the effect of dielectric constant, solve existing BaTiO3Thin film produces Lacking oxygen because of preparation, military service and causes leakage current, dielectric loss to increase, the problem even lost efficacy.
Description
Technical field
The present invention relates to dielectric substance and manufacture field, be specifically related to the preparation method of a kind of molybdenum alloy barium titanate film.
Background technology
The BaTiO3 thin film of high-k has important application prospect in the field such as embedded capacitance and high energy-storage travelling wave tube,
Particularly Direct precipitation BaTiO3 thin film on the base metal substrate such as Ni, Cu, attracts wide attention in recent years, especially, because of lining
Residual stress that between the end and thin film, mismatch causes and the leakage current that Lacking oxygen migration, redistribution etc. cause have attracted people especially
Sight.
Fusing point is high, intensity is big, electrical and thermal conductivity performance good, etch resistant properties is strong and high-temperature mechanics owing to having for molybdenum and alloy thereof
Can well wait advantage.At present, the series being applied to high-temperature field mainly has TZM plate, Mo-La doping sheet material, Mo-Re plate and ASK
Doping sheet material.Wherein, the sheet material for high temperature sintering boat is mainly TZM plate and Mo-La doping sheet material.Although they all have
Good high-temperature behavior, but remain weak point at present.Low-temperature flexibility such as TZM plate is not enough, Plastic Forming difficulty；
Although Mo-Re sheet material excellent performance, but owing to Re is scarcity metals, expensive, processing cost is difficult to control to；Mo-La adulterates
Sheet material room-temperature property is good, but has red brittleness, intensity and plasticity during high temperature and can reduce simultaneously so that it is service life is by shadow
Ring, thus improve production cost.
Experimentation finds multilamellar BaTiO3The barrier height at the homogeneity interface that thin film is formed also is greater than crystal boundary and is formed
Back-to-back pair of schottky barrier height.Additionally, research shows that face internal pressure stress can improve BaTiO3Base-multi-layer ceramics electricity
The dielectric constant (being parallel to substrate surface) of container.And along with the increase of film thickness, residual compressive stress is on a declining curve.Therefore
It is necessary to research and develop a kind of migration with obstruction Lacking oxygen, increases BaTiO3Pellicular front internal pressure stress, can play reduction simultaneously and be situated between
Electrical loss and the multi-layer film structure of raising dielectric constant effect.
Summary of the invention
The present invention provides the preparation method of a kind of molybdenum alloy barium titanate film, and the method can reach and significantly improves and control material
The purpose of the organizational structure of material, multi-layer film structure not only can hinder the migration of Lacking oxygen, it is also possible to increases BaTiO3Thin film
Face internal pressure stress, therefore can play and reduce dielectric loss and improve the effect of dielectric constant, solve existing BaTiO3Thin film
Because preparation, military service produce Lacking oxygen and cause leakage current, dielectric loss to increase, the problem even lost efficacy.
To achieve these goals, the invention provides the preparation method of a kind of molybdenum alloy barium titanate film, the method bag
Include following steps:
(1) substrate is prepared
By Mo5Si3/ Y2O3, being milled to mean diameter is 100-300nm；
It is averaged respectively as the molybdenum doping material component proportioning of design prepared by pure molybdenum powder and the first step of particle diameter ＜ 8 μm
Mo5Si3/ Y2O3Mixing, uses prior powder metallurgy method to carry out mixing, being pressed into sintering slab；
Gained is sintered slab under pure hydrogen atmosphere, is heated to 1850 DEG C-2050 DEG C, be incubated and be sintered for 5-10 hour；Cold with stove
But, after, sintered blank is obtained；
By room temperature, the sintered blank obtained is heated to 1350 DEG C of-1500 DEG C of hot rollings, and pass deformation is 20%-35%, total deformation
Amount more than 80% time, complete rolling to substrate；
(2) substrate pretreatment
Described substrate pretreatment, can be ground polishing, ultrasonic cleaning and ion source successively and clean；
(3) by nanometer BaTiO3Powder is pressed into the BaTiO of a diameter of 75mm at 1000 DEG C3Target；
By BaTiO3Target is respectively washed 5min with in dehydrated alcohol, deionized water successively, with by BaTiO3Target material surface miscellaneous
Matter cleaning is clean, the most in an oven by BaTiO3Target is dried；
(4) once sputter
Pretreated substrate is fixed in magnetron sputtering apparatus on the sample stage of inner cavity chamber, simultaneously in magnetron sputtering apparatus
Inner cavity chamber fixes BaTiO3Target, then magnetron sputtering apparatus inner chamber is evacuated to vacuum is 10-4Pa；
It is passed through Ar and O in equipment2Until operating pressure reaches 1.2Pa, and set the sputtering power of sputtering equipment as 145W, lining
The sputtering parameter that end temperature is 380-420 DEG C, substrate rotary speed is 10-20rpm carries out sputtering for the first time；
In first time sputter procedure, detect the sputtering thickness of thin film at any time, until it reaches set thickness, after having sputtered, fall
Temperature is to taking out sample after room temperature and being placed in sample box；
(5) secondary sputtering
First time sputtered samples is placed in tube furnace, is passed through protective gas N2About 2min, until the air of the inside is caught up with
Going out clean, then tube furnace is warmed up to 750 DEG C, programming rate is 10 DEG C/min, carries out heat 750 DEG C of heated at constant temperature 30min
Processing, then drop to room temperature, cooling rate is 10 DEG C/min；
Sputtered samples after completing heat treatment carries out second time and sputters, and the substrate temperature in sputtering parameter is set to for the second time
420-450 DEG C, the sputtering power of sputtering equipment is 145W, substrate rotary speed is 10-20rpm,
Sputtered samples is placed in tube furnace after having sputtered by second time, is passed through protective gas N22min, until the inside
Air is forced out totally, then tube furnace is warmed up to 770 DEG C, and programming rate is 10 DEG C/min, 770oC heated at constant temperature
30min, then drops to room temperature, and cooling rate is 10 DEG C/min, obtains molybdenum alloy barium titanate film.
Preferably, in described step (2), described grinding and polishing, can be by substrate first on the boart boart wheel disc of 600 mesh
Carry out roughly grinding 10min, on the boart boart wheel disc of 1200 mesh, then carry out fine grinding 10min, then with the diamond polishing of W2.5
Powder is polished to specimen surface the brightest, described ultrasonic cleaning, can be cleaned in the following order by the substrate after grinding and polishing,
Acetone ultrasonic cleaning 5min → dehydrated alcohol ultrasonic cleaning 5min → dry is stand-by, and described ion source cleans, can use Hall from
Component is carried out 5min to substrate, and pressure is 2 × 10-2Pa, substrate temperature is 300 DEG C, and argon flux is 10sccm, bias
For-100V, cathode current is 29.5A, and cathode voltage is 19V, and anode current is 7A, and anode voltage is 80V, to remove substrate table
The adsorbed gas in face and impurity, improve deposition coating and the bond strength of substrate and quality of forming film.
The method can reach the purpose significantly improving and controlling materials microstructure structure, and multi-layer film structure not only can hinder
Hinder the migration of Lacking oxygen, it is also possible to increase BaTiO3Pellicular front internal pressure stress, therefore can play reduction dielectric loss and raising
The effect of dielectric constant, solves existing BaTiO3Thin film produces Lacking oxygen because of preparation, military service and causes leakage current, dielectric loss
Increase, the problem even lost efficacy.
Detailed description of the invention
Embodiment one
The molybdenum alloy substrate of the molybdenum alloy sheet material of the present embodiment is made up of following components by weight percent: the Mo of 0.5%5Si3/ Y2O3；Remaining
Amount is the pure molybdenum powder matrix phase of mean diameter ＜ 8 μm.
By Mo5Si3/ Y2O3, being milled to mean diameter is 100-300nm.
It is averaged respectively as the molybdenum doping material component proportioning of design prepared by pure molybdenum powder and the first step of particle diameter ＜ 8 μm
Mo5Si3/ Y2O3Mixing, uses prior powder metallurgy method to carry out mixing, being pressed into sintering slab.
Gained is sintered slab under pure hydrogen atmosphere, is heated to 1850 DEG C, be incubated and be sintered for 5 hours；After furnace cooling,
Obtain sintered blank.
By room temperature, the sintered blank obtained is heated to 1350 DEG C of hot rollings, and pass deformation is 20%, and total deformation is more than
When 80%, complete rolling to substrate.
Substrate pretreatment, described substrate pretreatment, polishing, ultrasonic cleaning and ion source can be ground successively and clean.Institute
State grinding and polishing, can first carry out substrate roughly grinding 10min, then at the Buddha's warrior attendant of 1200 mesh on the boart boart wheel disc of 600 mesh
Carry out fine grinding 10min on stone sand wheel disc, then be polished to specimen surface the brightest with the diamond polishing powder of W2.5, described
Ultrasonic cleaning, can clean in the following order by the substrate after grinding and polishing, and acetone ultrasonic cleaning 5min → dehydrated alcohol is ultrasonic clearly
Washing 5min → dry stand-by, described ion source cleans, and can use hall ion source that substrate is carried out 5min, and pressure is 2 ×
10-2Pa, substrate temperature is 300 DEG C, and argon flux is 10sccm, biases as-100V, and cathode current is 29.5A, and cathode voltage is
19V, anode current is 7A, and anode voltage is 80V, to remove adsorbed gas and the impurity of substrate surface, improves deposition coating
Bond strength and quality of forming film with substrate.
By nanometer BaTiO3Powder is pressed into the BaTiO of a diameter of 75mm at 1000 DEG C3Target；By BaTiO3Target depends on
Secondary dehydrated alcohol, deionized water are respectively washed 5min, with by BaTiO3The impurity cleaning of target material surface is clean, exists the most again
By BaTiO in baking oven3Target is dried.
Pretreated substrate is fixed in magnetron sputtering apparatus on the sample stage of inner cavity chamber, sets at magnetron sputtering simultaneously
Standby middle inner cavity chamber fixes BaTiO3Target, then magnetron sputtering apparatus inner chamber is evacuated to vacuum is 10-4Pa；Lead in equipment
Enter Ar and O2Until operating pressure reaches 1.2Pa, and set the sputtering power of sputtering equipment as 145W, underlayer temperature as 380 DEG C,
Substrate rotary speed is that the sputtering parameter of 10rpm carries out sputtering for the first time.
In first time sputter procedure, detect the sputtering thickness of thin film at any time, until it reaches setting thickness, sputtering completes
After, take out sample after cooling to room temperature and be placed in sample box.
First time sputtered samples is placed in tube furnace, is passed through protective gas N2About 2min, until the air of the inside
Being forced out clean, then tube furnace is warmed up to 750 DEG C, programming rate is 10 DEG C/min, enters 750 DEG C of heated at constant temperature 30min
Row heat treatment, then drops to room temperature, and cooling rate is 10 DEG C/min；Sputtered samples after completing heat treatment carries out second time and spatters
Penetrating, the substrate temperature in sputtering parameter is set to 420 DEG C for the second time, and the sputtering power of sputtering equipment is 145W, substrate rotates speed
Degree is 10rpm.
Sputtered samples is placed in tube furnace after having sputtered by second time, is passed through protective gas N22min, until in
The air in face is forced out totally, then tube furnace is warmed up to 770 DEG C, and programming rate is 10 DEG C/min, 770oC heated at constant temperature
30min, then drops to room temperature, and cooling rate is 10 DEG C/min, obtains molybdenum alloy barium titanate film.
Embodiment two
The molybdenum alloy substrate of the molybdenum alloy sheet material of the present embodiment is made up of following components by weight percent: the Mo of 2%5Si3/ Y2O3；Surplus
Pure molybdenum powder matrix phase for mean diameter ＜ 8 μm.
By Mo5Si3/ Y2O3, being milled to mean diameter is 100-300nm.
It is averaged respectively as the molybdenum doping material component proportioning of design prepared by pure molybdenum powder and the first step of particle diameter ＜ 8 μm
Mo5Si3/ Y2O3Mixing, uses prior powder metallurgy method to carry out mixing, being pressed into sintering slab.
Gained is sintered slab under pure hydrogen atmosphere, is heated to 2050 DEG C, be incubated and be sintered for 10 hours；After furnace cooling,
Obtain sintered blank.
By room temperature, the sintered blank obtained is heated to 1500 DEG C of hot rollings, and pass deformation is 35%, and total deformation is more than
When 80%, complete rolling to substrate.
Substrate pretreatment, described substrate pretreatment, polishing, ultrasonic cleaning and ion source can be ground successively and clean.Institute
State grinding and polishing, can first carry out substrate roughly grinding 10min, then at the Buddha's warrior attendant of 1200 mesh on the boart boart wheel disc of 600 mesh
Carry out fine grinding 10min on stone sand wheel disc, then be polished to specimen surface the brightest with the diamond polishing powder of W2.5, described
Ultrasonic cleaning, can clean in the following order by the substrate after grinding and polishing, and acetone ultrasonic cleaning 5min → dehydrated alcohol is ultrasonic clearly
Washing 5min → dry stand-by, described ion source cleans, and can use hall ion source that substrate is carried out 5min, and pressure is 2 ×
10-2Pa, substrate temperature is 300 DEG C, and argon flux is 10sccm, biases as-100V, and cathode current is 29.5A, and cathode voltage is
19V, anode current is 7A, and anode voltage is 80V, to remove adsorbed gas and the impurity of substrate surface, improves deposition coating
Bond strength and quality of forming film with substrate.
By nanometer BaTiO3Powder is pressed into the BaTiO of a diameter of 75mm at 1000 DEG C3Target；By BaTiO3Target depends on
Secondary dehydrated alcohol, deionized water are respectively washed 5min, with by BaTiO3The impurity cleaning of target material surface is clean, exists the most again
By BaTiO in baking oven3Target is dried.
Pretreated substrate is fixed in magnetron sputtering apparatus on the sample stage of inner cavity chamber, sets at magnetron sputtering simultaneously
Standby middle inner cavity chamber fixes BaTiO3Target, then magnetron sputtering apparatus inner chamber is evacuated to vacuum is 10-4Pa；Lead in equipment
Enter Ar and O2Until operating pressure reaches 1.2Pa, and set the sputtering power of sputtering equipment as 145W, underlayer temperature as 420 DEG C,
Substrate rotary speed is that the sputtering parameter of 20rpm carries out sputtering for the first time.
In first time sputter procedure, detect the sputtering thickness of thin film at any time, until it reaches setting thickness, sputtering completes
After, take out sample after cooling to room temperature and be placed in sample box.
First time sputtered samples is placed in tube furnace, is passed through protective gas N2About 2min, until the air of the inside
Being forced out clean, then tube furnace is warmed up to 750 DEG C, programming rate is 10 DEG C/min, enters 750 DEG C of heated at constant temperature 30min
Row heat treatment, then drops to room temperature, and cooling rate is 10 DEG C/min；Sputtered samples after completing heat treatment carries out second time and spatters
Penetrating, the substrate temperature in sputtering parameter is set to 450 DEG C for the second time, and the sputtering power of sputtering equipment is 145W, substrate rotates speed
Degree is 20rpm.
Sputtered samples is placed in tube furnace after having sputtered by second time, is passed through protective gas N22min, until in
The air in face is forced out totally, then tube furnace is warmed up to 770 DEG C, and programming rate is 10 DEG C/min, 770oC heated at constant temperature
30min, then drops to room temperature, and cooling rate is 10 DEG C/min, obtains molybdenum alloy barium titanate film.
Claims (2)
1. a preparation method for molybdenum alloy barium titanate film, the method comprises the steps:
(1) substrate is prepared
By Mo5Si3/ Y2O3, being milled to mean diameter is 100-300nm；
It is averaged respectively as the molybdenum doping material component proportioning of design prepared by pure molybdenum powder and the first step of particle diameter ＜ 8 μm
Mo5Si3/ Y2O3Mixing, uses prior powder metallurgy method to carry out mixing, being pressed into sintering slab；
Gained is sintered slab under pure hydrogen atmosphere, is heated to 1850 DEG C-2050 DEG C, be incubated and be sintered for 5-10 hour；Cold with stove
But, after, sintered blank is obtained；
By room temperature, the sintered blank obtained is heated to 1350 DEG C of-1500 DEG C of hot rollings, and pass deformation is 20%-35%, total deformation
Amount more than 80% time, complete rolling to substrate；
(2) substrate pretreatment
Described substrate pretreatment, can be ground polishing, ultrasonic cleaning and ion source successively and clean；
(3) by nanometer BaTiO3Powder is pressed into the BaTiO of a diameter of 75mm at 1000 DEG C3Target；
By BaTiO3Target is respectively washed 5min with in dehydrated alcohol, deionized water successively, with by BaTiO3The impurity of target material surface
Cleaning is clean, the most in an oven by BaTiO3Target is dried；
(4) once sputter
Pretreated substrate is fixed in magnetron sputtering apparatus on the sample stage of inner cavity chamber, simultaneously in magnetron sputtering apparatus
Inner cavity chamber fixes BaTiO3Target, then magnetron sputtering apparatus inner chamber is evacuated to vacuum is 10-4Pa；
It is passed through Ar and O in equipment2Until operating pressure reaches 1.2Pa, and set the sputtering power of sputtering equipment as 145W, lining
The sputtering parameter that end temperature is 380-420 DEG C, substrate rotary speed is 10-20rpm carries out sputtering for the first time；
In first time sputter procedure, detect the sputtering thickness of thin film at any time, until it reaches set thickness, after having sputtered, fall
Temperature is to taking out sample after room temperature and being placed in sample box；
(5) secondary sputtering
First time sputtered samples is placed in tube furnace, is passed through protective gas N2About 2min, until the air of the inside is forced out
Totally, then tube furnace being warmed up to 750 DEG C, programming rate is 10 DEG C/min, carries out at heat 750 DEG C of heated at constant temperature 30min
Reason, then drops to room temperature, and cooling rate is 10 DEG C/min；
Sputtered samples after completing heat treatment carries out second time and sputters, and the substrate temperature in sputtering parameter is set to for the second time
420-450 DEG C, the sputtering power of sputtering equipment is 145W, substrate rotary speed is 10-20rpm,
Sputtered samples is placed in tube furnace after having sputtered by second time, is passed through protective gas N22min, until the inside
Air is forced out totally, then tube furnace is warmed up to 770 DEG C, and programming rate is 10 DEG C/min, 770oC heated at constant temperature
30min, then drops to room temperature, and cooling rate is 10 DEG C/min, obtains molybdenum alloy barium titanate film.
The most as claimed in claim 1, it is characterised in that in described step (2), described grinding and polishing, can be by substrate first 600
Carry out on purpose boart boart wheel disc roughly grinding 10min, on the boart boart wheel disc of 1200 mesh, then carry out fine grinding 10min, then
It is polished to specimen surface the brightest with the diamond polishing powder of W2.5, described ultrasonic cleaning, can be by after grinding and polishing
Substrate cleans in the following order, and acetone ultrasonic cleaning 5min → dehydrated alcohol ultrasonic cleaning 5min → dry is stand-by, described ion
Source is cleaned, and can use hall ion source that substrate is carried out 5min, and pressure is 2 × 10-2Pa, substrate temperature is 300 DEG C, argon
Flux is 10sccm, biases as-100V, and cathode current is 29.5A, and cathode voltage is 19V, and anode current is 7A, anode voltage
For 80V, to remove adsorbed gas and the impurity of substrate surface, improve the bond strength of deposition coating and substrate and become film quality
Amount.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702324A (en) * | 2016-12-27 | 2017-05-24 | 苏州思创源博电子科技有限公司 | Preparation method of ferroelectric superlattice material |
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|---|---|---|---|---|
| CN101921982A (en) * | 2010-09-06 | 2010-12-22 | 厦门大学 | Method for preparing nano-structured nitrogen silicon zirconium coating on surface of hard alloy substrate |
| CN101935793A (en) * | 2010-10-13 | 2011-01-05 | 中南大学 | High-strength Mo-doped sheet and preparation method thereof |
| CN105803395A (en) * | 2016-03-31 | 2016-07-27 | 长江大学 | Preparation method for multi-layer Ni/BaTiO3 thin film capable of reducing dielectric losses |
-
2016
- 2016-08-20 CN CN201610690531.7A patent/CN106191776A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101921982A (en) * | 2010-09-06 | 2010-12-22 | 厦门大学 | Method for preparing nano-structured nitrogen silicon zirconium coating on surface of hard alloy substrate |
| CN101935793A (en) * | 2010-10-13 | 2011-01-05 | 中南大学 | High-strength Mo-doped sheet and preparation method thereof |
| CN105803395A (en) * | 2016-03-31 | 2016-07-27 | 长江大学 | Preparation method for multi-layer Ni/BaTiO3 thin film capable of reducing dielectric losses |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702324A (en) * | 2016-12-27 | 2017-05-24 | 苏州思创源博电子科技有限公司 | Preparation method of ferroelectric superlattice material |
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