CN106191767A - Deposition mask, deposition mask frame and manufacture method thereof - Google Patents
Deposition mask, deposition mask frame and manufacture method thereof Download PDFInfo
- Publication number
- CN106191767A CN106191767A CN201510242242.6A CN201510242242A CN106191767A CN 106191767 A CN106191767 A CN 106191767A CN 201510242242 A CN201510242242 A CN 201510242242A CN 106191767 A CN106191767 A CN 106191767A
- Authority
- CN
- China
- Prior art keywords
- deposition mask
- depressed part
- deposition
- picture portion
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The open mask of the present invention, mask frame and manufacture method thereof.The present invention relates to make deposited material pass through to deposit to manufacture the deposition mask of display device on substrate, it includes that the deposited picture portion passed through for described deposited material is connected and supports the flank in described deposited picture portion and the depressed part of the periphery being formed at described deposited picture portion and described flank of caving in over the ground with described substrate surface with described deposited picture portion.
Description
Technical field
Embodiments of the present invention relate to deposition mask, deposition mask frame and manufacture thereof
Method.
Background technology
Usually as active light emissive type display element, as organic of one of flat display
The advantage that electro-optical display device not only has visual angle width, contrast is excellent, but also have and can pass through
Low voltage drive, flat in light weight and the advantage of fast response time, thus as of future generation
Display element and get most of the attention.
This light-emitting component is divided into inorganic light-emitting device and organic according to the material forming luminescent layer
Optical element, and compared to inorganic light-emitting device, organic illuminating element has brightness, response speed
Advantage outstanding etc. characteristic, that can show etc. with colour, therefore the exploitation to it is the most widely carried out.
Organic light-emitting display device forms organic membrane and/or electrode by vacuum deposition method.But, with
Organic light-emitting display device gradually by high-resolution, the opening of mask used in depositing operation
The width of formula slit (open slit) becomes narrow gradually and its distribution is also required to be further decreased.
Additionally, in order to manufacture high-resolution organic light-emitting display device, it is desirable to reduce or remove shade
Phenomenon (shadow effect).To this end, deposit when substrate is close to mask at present
Technique, and rising the exploitation for improving substrate and the technology of the attachment degree of mask.
Above-mentioned background technology is that inventor draws the present invention and the technical information that has or at this
The technical information of acquistion during the drawing of invention, not necessarily public before the application of the present invention
Drive the known technology in general public.
Summary of the invention
Embodiments of the present invention provide deposition mask, deposition mask frame and manufacture thereof
Method.
According to an aspect of the present invention, it is provided that deposition mask, deposited material is used by described deposition
Masked-deposition on substrate to manufacture display device, it includes the deposition passed through for described deposited material
Drafting department be connected with described deposited picture portion and support described deposited picture portion flank and with institute
State substrate surface to cave in over the ground and be formed at the peripheral depressed part of described deposited picture portion and described flank.
According to a further aspect in the invention, it is provided that deposition mask frame, including framework and
Face and described contact therewith and another side are in the face of the deposition mask of substrate, and described deposition is used
Mask includes that the deposited picture portion passed through for described deposited material is connected also with described deposited picture portion
Support the flank in described deposited picture portion and cave in over the ground with described substrate surface and be formed at described deposition
Drafting department and the peripheral depressed part of described flank.
Additionally, the edge part of described deposition mask can be removed by cutting described depressed part.
In addition, it can include protrude from the bottom surface of described depressed part in the outside of described depressed part
Protruding.
Additionally, the height of described projection can be formed as less than the degree of depth of described depressed part.
Additionally, described framework can include base portion and from described base portion protrude and one side with
The support of described deposition mask contact.
Additionally, described depressed part can snap to the peripheral ends of described support with in the vertical direction.
In addition, it can include be arranged between described depressed part and described deposited picture portion and right
The weld part that described framework is fixed with described deposition mask.
According to another aspect of the invention, it is provided that deposition use mask frame manufacture method, including
Prepare the step of framework;Prepare the step of deposition mask;By described deposition mask alignment to institute
State the step on framework;And cut to remove described deposition mask to described depressed part
The step of edge part, wherein said deposition mask includes: the deposited picture passed through for deposited material
Portion is connected with described deposited picture portion and supports flank and and the substrate surface in described deposited picture portion
Depression is formed at the peripheral depressed part of described deposited picture portion and described flank over the ground.
Additionally, remove described edge part step in, can to described depressed part irradiating laser,
Or with rotary knife cutter, described depressed part is cut.
Additionally, in the step removing described edge part, can be cut same of described depressed part
Time formed from the bottom surface of described depressed part protrude projection.
Additionally, the height of described projection can be formed as less than the degree of depth of described depressed part.
Additionally, the width of described depressed part can be formed larger than the luminous point (Spot) of described laser
Diameter.
Further, it is also possible to by the step on described deposition mask alignment to described framework and removal
Include between the step of described edge part weld part is formed at described depressed part and described deposited picture
With the step that described framework is fixed with described deposition mask between portion.
By accompanying drawing, claims and detailed description of the invention, its other party in addition to the foregoing
Face, feature, advantage will become clear and definite.
According to the embodiment of the present invention, deposition mask, deposition mask frame and system thereof
The method of making improves the close property of deposition mask and substrate, such that it is able to by deposited material critically
Deposit on substrate.
Accompanying drawing explanation
Fig. 1 is that the decomposition illustrating deposition mask frame according to the embodiment of the present invention is stood
Body figure.
Fig. 2 to Fig. 5 is the system illustrating deposition mask frame according to the embodiment of the present invention
Make the sectional view of method.
Fig. 6 is that the organic light emission being shown with the deposition mask frame manufacture shown in Fig. 1 shows
The view of showing device.
Detailed description of the invention
The present invention can implement multiple modification and can have numerous embodiments, and is intended to attached
Particular implementation shown in figure is also described in detail.By referring to combining accompanying drawing specifically
Bright embodiment, the effect of the present invention and feature and realize its method and will become clear and definite.So
And, the present invention is not limited to embodiment disclosed below, but can realize with variform.
In following embodiment, the wording of " first ", " second " etc. does not have containing of restriction
Justice, but use with the purpose that an element and other elements are distinguished.Additionally,
Unless being explicitly indicated, otherwise the statement of odd number includes the statement of plural number.Additionally, " bag
Include " or the wording of " having " etc. refer to depositing of the feature recorded described in description or element
Rather than get rid of the additional probability of other features more than one or element in advance.
Additionally, for the facility illustrated, in accompanying drawing, the size of element can be exaggerated or be contracted
Little.Such as, for the facility illustrated, the size of each component shown in accompanying drawing and thickness are by arbitrarily
Illustrating, therefore the present invention is not necessarily limited to shown in figure.Can be with different sides additionally, work as
When formula realizes some embodiment, specific technique can be according to different from illustrated order suitable
Sequence performs.Such as, two techniques of explanation continuously can perform the most simultaneously, it is also possible to according to
The order contrary with illustrated order is carried out.
Next, with reference to accompanying drawing, embodiments of the present invention are described in detail, and in reference
When accompanying drawing illustrates, identical reference will be given to identical or corresponding element, and
And the repeated description to it will be omitted.
Fig. 1 is that the decomposition illustrating deposition mask frame according to the embodiment of the present invention is stood
Body figure.
With reference to Fig. 1, deposition mask frame 10 can include deposition mask 100 and framework
200.Additionally, deposition mask frame 10 can include that weld part 140 is with by deposition mask
100 are fixed on framework 200.Weld part 140 can be formed at deposited picture portion 110 and depressed part 130
Between (with reference to Fig. 4).
Deposition mask 100 can include multiple deposited picture portion 110, connect deposited picture portion 110
Flank 111 and be formed at the depressed part 130 in outside in deposited picture portion 110.
Deposited picture portion 110 is arranged to corresponding with the peristome 210 of framework 200, and is formed through
The deposition pattern of deposition mask 100.Can be by by the deposited material of above-mentioned deposition pattern
It is deposited on substrate.That is, deposited picture portion 110 makes deposited material pass through deposition mask 100 and sink
Amass on substrate, such that it is able to limit deposition region on substrate.
Figure showing, deposited picture portion 110 includes the mask pattern of multiple point-like (dot) form.So
And, the present invention is not limited to this, it should be appreciated that as long as those skilled in the art just can implement
Multiple modified example.That is, deposited picture portion 110 can include the mask pattern maintaining whole open state
Or the mask pattern of dot-shapes.The quantity in deposited picture portion 110 shown in Fig. 1, cloth set
Putting or shape is only a kind of example, the present invention is not limited to this.
Deposition mask 100 can be formed by a large component and on bonded to frame 200.Additionally,
Can be formed by multiple stripe-shape mask with the own wt of dispersed deposition mask 100.But, in order to
The facility illustrated, hereinafter will mainly illustrate the deposition mask 100 of individual form.
Flank 111 can be connected with deposited picture portion 110 and support deposited picture portion 110.Flank 111
Be arranged in some deposited picture portion and adjacent to another deposited picture portion in this deposited picture portion between
Connect deposited picture portion 110.Additionally, flank 111 can be connected to each supporting of framework 200
The supporting member (not shown) in portion supports with the own wt of mask 100 of dispersed deposition effectively.
Depressed part 130 can hollowly be formed at deposited picture portion 110 and flank 111 is peripheral, and cloth
It is set to and substrate surface pair.Depressed part 130 is formed at the outside of deposition mask 100, such that it is able to
Deposition mask 100 marks off and is fixed on the deposition region of framework 200 and as to be cut and go
The surplus region of the edge part 120 removed.After deposition mask 100 is fixed on framework 200, need
Remove the surplus region of the edge part 120 as deposition mask 100 so that deposition mask
100 mate with the size of framework 200.Now, operation people can use along depressed part 130 cutting deposition
Mask 100.
Protruding 131 can be formed along depressed part 130 in the outside of depressed part 130.The height of protruding 131
Degree T1Degree of depth T of depressed part 130 can be formed as less than0.When depositing with covering along depressed part 130 cutting
During mould 100, protruding 131 can be formed along depressed part 130.That is, when cutting depressed part 130,
Burr (BURR) will be formed along facet, such that it is able to formed convex from the bottom surface of depressed part 130
Go out the projection (with reference to Fig. 5) formed.
The width of depressed part 130 can be formed larger than being irradiated to the light of the laser of deposition mask 100
The diameter of point (Spot).The luminous point of laser is snapped to the bottom surface of depressed part 130, such that it is able to
The region deformation in addition to depressed part 130 is prevented during cutting deposition mask 100.Additionally, depression
That the width in portion 130 can be formed larger than rotary knife cutter and deposition mask 100 contact portion
Width.It is aligned to rotary knife cutter contact with the bottom surface of depressed part 130, such that it is able in cutting
The region deformation in addition to depressed part 130 is prevented during deposition mask 100.
Framework 200 can engage and support deposition mask 100 with deposition mask 100.Framework 200
Can include being available for peristome 210 that deposited material passes through and the outside that is formed at peristome 210
Bearing portion.Framework 200 can be made up of metal or synthetic resin etc., and is formed as quadrangle form also
There is more than one peristome 210, but the thought of embodiment is not limited to this, but permissible
Be formed as the variforms such as circle or hexagon.
Multiple supports include being arranged to the most facing with each other and the most parallel first
Support 201 and the 3rd support 203 and be arranged to the most facing with each other and along X side
To the second parallel support 202 and the 4th support 204.First support the 201, second support
202, the 3rd support 203 and the 4th support 204 are the quadrilateral frames being connected to each other.
Multiple supports can be connected with base portion 211.Peristome can be formed inside base portion 211
210, outside can be formed larger than multiple support and protrude formation towards outside.That is, Duo Gezhi
Bearing portion is protruded from base portion 211 and is formed, and the most multiple supports and base portion 211 form end in periphery
Difference.This end difference face is not limited to given shape and apperance, but for the facility illustrated, hereafter
Middle will mainly the situation with inclination be illustrated.
Multiple supports are bonded into and contact with deposition mask 100.Deposition caves in in mask 100
The inboard portion in portion 130 is aligned to contact to the 4th support 204 with the first support 201.Depression
Portion 130 can snap to the periphery of the first support 201 to the 4th support 204 with in the vertical direction
End.Framework 200 may be caused because excessively cutting depressed part 130 when cutting deposition mask 100
Deformation.First support 201 to the 4th support 204 base portion 211 and deposition with mask 100 it
Between form space, thus form laser or the surplus of rotary knife cutter when cutting deposition with mask 100
Space, such that it is able to minimize the deformation of framework 200.
Fig. 2 to Fig. 5 is to illustrate deposition mask frame 10 according to the embodiment of the present invention
The sectional view of manufacture method.
With reference to Fig. 2 to Fig. 5, deposition mask frame 10 manufacture method can include preparing framework
The step of 200, prepare the step of deposition mask 100, deposition mask 100 is fixed to framework 200
On step and remove the deposition step of the edge part 120 of mask 100.Because preparing framework 200
Step and the step preparing deposition mask 100 are to manufacture above-mentioned framework 200 and deposition mask
The step of 100, therefore will omit or summary its description.
With reference to Fig. 2, multiple supports that deposition mask 100 can be arranged to framework 200 connect
Touch.Depressed part 130 can snap to the end of multiple support with in the vertical direction.Depressed part 130
The outside of the first support 201 to the 4th support 204 is set to, can be caved in by cutting subsequently
The surplus region of deposition mask 100 is removed in portion 130.
With reference to Fig. 3, deposition mask 100 can be fixed on framework 200 by welding procedure.To
After deposition mask 100 snaps on framework 200, can be to depressed part 130 and deposited picture portion 110
Between carry out welding and being fixed on framework 200 by deposition mask 100.
With reference to Fig. 4 and Fig. 5, the step of the edge part 120 removing deposition mask 100 is carried out as follows
Explanation.Edge part 120 as surplus region can be removed by cutting depressed part 130.In order to
Manufacture deposition mask frame 10 compactly, need to remove the edge part in deposition mask 100
120 reduce size.
After deposition mask 100 is fixed on framework 200, can be to depressed part 130 irradiating laser
5 or with rotary knife cutter, depressed part 130 is cut.When cutting depressed part 130, can be along
Facet forms burr (BURR), is formed consequently, it is possible to formed to protrude from the bottom surface of depressed part 130
Projection 131.That is, protruding 131 are formed along depressed part 130 in the outside of depressed part 130, and
Protrude from the bottom surface of depressed part 130.The height T of protruding 1311Depressed part 130 can be formed as less than
Degree of depth T0.Depressed part 130 has from deposition mask 100 surface T0The degree of depth, protruding 131 have from
The bottom surface T of depressed part 1301Length.
The width of depressed part 130 can be formed larger than being irradiated to the laser 5 of deposition mask 100
The diameter of luminous point (Spot).The luminous point of laser 5 is snapped to the bottom surface of depressed part 130, such that it is able to
The region deformation in addition to depressed part 130 is prevented when cutting deposition mask 100.Additionally, it is recessed
Fall into the width in portion 130 and can be formed larger than touching rotary knife cutter big of deposition mask 100
Little.It is aligned to rotary knife cutter contact with the bottom surface of depressed part 130, such that it is able in cutting deposition
With the region deformation prevented during mask 100 in addition to depressed part 130.
Depressed part 130 in the vertical direction snaps to the first support 201 to the 4th support 204
Peripheral ends.Poor according to the end being formed at framework 200, deposition shape between mask 100 and framework 200
Become space.It is available for laser 5 during by being formed at cutting deposition mask 100 and rotary knife cutter operates
Overdose space, framework 200 can be minimized and deform.That is, the first support 201 is to the 4th supporting
Portion 204 forms space between base portion and deposition are with mask 100, thus at cutting deposition mask
Laser 5 or the overdose space of rotary knife cutter is formed, such that it is able to minimize the change of framework 200 when 100
Shape.
Along with the maximization of display device, the size of deposition mask 100 is consequently increased.Therefore,
Focus on being promoted the space of depositing operation by the size reducing deposition mask frame 10
Utilization rate also improves the efficiency of deposition.In order to manufacture compact deposition mask frame, permissible
Remove the surplus region of deposition mask, and be now likely to be formed burr (burr) on facet.
Being formed because burr (burr) protrudes from the surface of deposition mask, using so result in deposition
Mask declines with the close property of substrate.Specifically, the one side of deposition mask frame and substrate
It is close to, and is deposited on substrate by the deposited material of deposition mask.When substrate and deposition
With when forming gap between mask, the shade phenomenon (Shadow forming nonuniform deposition may be caused
effect).This shade phenomenon may cause under the productivity ratio of display product and the accuracy of pixel
Fall.
In order to overcome this problem, the burr (burr) that needs removal is formed on deposition mask
Technique, and this additional process may cause the decline of production efficiency and the rising of production cost.
When manufacturing deposition mask frame 10 according to the embodiment of the present invention, along depression
Portion 130 eliminates the edge part 120 as surplus region.Protrude along the bottom surface of depressed part 130 is convex
Play 131 can be formed on the facet of deposition mask 100.Because the height T of protruding 1311It is less than
Degree of depth T of depressed part 1300, so deposition mask 100 surface will not be protruded into.That is, by minimum
The spacing changed between deposition mask frame 10 and substrate promotes close property, can perform essence
Close depositing operation.
Additionally, may send out with contacting of substrate because of deposition mask frame 10 by minimizing
Raw cut or the deformation of substrate, can promote the efficiency of depositing operation.
Additionally, framework 200 is formed as the outboard end holding poor form and depressed part 130 to be formed at end difference
Portion, such that it is able to do not having the change of framework when the cutting technique as the edge part 120 in surplus region
Efficiently perform in the case of shape.
Fig. 6 is that the organic light emission being shown with the deposition mask frame manufacture shown in Fig. 1 shows
The view of showing device 300.
With reference to Fig. 6, organic light-emitting display device 300 is provided with substrate 311.Substrate 311 includes having
Flexible insulant.Such as, above-mentioned substrate 311 can be glass substrate.Additionally, substrate 311
Can be by polyimides (Polyimide;PI), Merlon (Polycarbonate;PC)、
Polyether sulfone (Polyethersulphone;PES), polyethylene terephthalate (Polyethylene
terephthalate;PET), polyethyleneterephthalate (Polyethylenenaphthalate;
PEN), polyarylate (Polyarylate;Or fiberglass reinforced plastics (Fiber glass PAR)
reinforced plastic;Etc. FRP) macromolecular material is constituted.Substrate 311 can be transparent,
Translucent or opaque.
Barrier film 312 can be formed on substrate 311.Barrier film 312 can be formed as integrally covering
The upper side of substrate 311.Barrier film 312 can include inoranic membrane or organic membrane.Barrier film 312 is permissible
Be formed as monofilm or be laminated for multilayer film.Such as, barrier film 312 can be by selected from such as silicon
Oxide (SiOx), silicon nitride (SiNx), silicon nitrogen oxides (SiON), aluminum oxide
(AlO), inorganic matter and the such as acrylic resin, polyamides of aluminum ox nitride (AlON) etc. are sub-
At least one in the Organic substance of amine, polyester etc. is formed.
Barrier film 312 performs to stop oxygen and the function of moisture, prevents moisture or impurity from passing through substrate
311 diffusions, and the top for substrate 311 provides smooth surface.Thin film transistor (TFT) (Thin film
transistor;TFT) can be formed on barrier film 312.Although according to the embodiment of the present invention
Thin film transistor (TFT) be shown as top-gated (Top gate) type thin film transistor (TFT), but it should be understood that, it is possible to
To include the thin film transistor (TFT) of other structures of bottom gate (Bottom gate) type etc..
Semiconductor active layer 313 can be formed on barrier film 312.According to doped N-type foreign ion or
P type impurity ion, semiconductor active layer 313 can be formed source region 314 and drain region 315.Source
Region between region 314 and drain region 315 is the channel region 316 of impurity of undoping.
In the case of semiconductor active layer 313 is formed by polysilicon, can be by forming non-crystalline silicon also
And make its crystallization to be changed into polysilicon.Additionally, semiconductor active layer 313 can be by oxide half
Conductor is formed.Such as, oxide semiconductor can comprise the oxide of following material, wherein said
Material selected from such as zinc (Zn), indium (In), gallium (Ga), stannum (Sn), cadmium (Cd),
Germanium (Ge), 4,12,13,14 race's metallic elements and combinations thereof of hafnium (Hf).
Gate insulating film 317 can be deposited on semiconductor active layer 313.Gate insulating film 317 includes
Such as Si oxide, silicon nitride or the inoranic membrane of metal-oxide.Gate insulating film 317 can be
Single or multiple lift structure.
Gate electrode 318 can be formed in the certain area on gate insulating film 317.Gate electrode 318 can
To comprise monofilm or the multilayer film of Au, Ag, Cu, Ni, Pt, Pd, Al, Mo, Cr etc., or
Person can comprise the alloy such as Al:Nd, Mo:W.
Interlayer dielectric 319 can be formed on gate electrode 318.Interlayer dielectric 319 can be by silica
The insulant of compound or silicon nitride etc. is formed.Additionally, above-mentioned interlayer dielectric 319 can be by
Insulation organic membrane is formed.
Source electrode 320 and drain electrode 321 can be formed on interlayer dielectric 319.Specifically, contact
Hole can be formed at grid by removing gate insulating film 317 and a part for interlayer dielectric 319
In dielectric film 317 and interlayer dielectric 319, and source electrode 320 can be electrically connected to by contact hole
Source region 314, drain electrode 321 can be electrically connected to drain region 315 by contact hole.
Passivating film 322 can be formed on source electrode 320 and drain electrode 321.Passivating film 322 can be by
The inoranic membrane of such as Si oxide or silicon nitride is formed or is formed by organic membrane.
Planarization film 323 can be formed on passivating film 322.Planarization film 323 can include acrylic acid
Resin (acryl), polyimides (polyimide), benzocyclobutene (Benzocyclobutene;
Etc. BCB) organic membrane.
Organic illuminating element OLED can be formed on thin film transistor (TFT) TFT.Organic illuminating element
OLED includes first electrode the 325, second electrode 327 and between the first electrode 325 and the second electrode 327
Between intermediate layer 326.
First electrode 325 by contact hole and source electrode 320 or and drain electrode 321 in any one is electric
Connect.First electrode 325 is corresponding to pixel electrode.
First electrode 325 serves as anode, and it can be formed by multiple conductive material.First electrode 325
Transparency electrode or reflecting electrode can be formed as.
Such as, when the first electrode 325 uses with transparency electrode, the first electrode 325 include ITO, IZO,
ZnO、In2O3Deng.When the first electrode 325 uses with reflecting electrode, the first electrode 325 can be
Reflectance coating is formed by Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr and compound etc. thereof
After on above-mentioned reflectance coating formed ITO, IZO, ZnO, In2O3Deng.
Pixel limits film (Pixel define layer;PDL) 324 planarization film 323 can be formed at
On to cover the marginal position of the first electrode 325 of organic illuminating element OLED.Pixel limits film 324
By limiting the light-emitting zone of each sub-pixel around the marginal position of the first electrode 325.
Pixel limits film 324 and is formed by Organic substance or inorganic matter.Such as, above-mentioned pixel limits film 324
Can be by such as polyimides, polyamide, benzocyclobutene, acrylic resin, phenolic resin etc.
Organic substance formed or formed by the inorganic matter such as SiNx.Pixel limits film 324 and can be formed as
Monofilm, or multilayer film can be formed as.
The institute that intermediate layer 326 can be formed at the part by etching pixel restriction film 324 and expose
State in the region of the first electrode 325.Intermediate layer 326 can be formed by depositing operation.
Intermediate layer 326 can be formed by low molecule organic matter or macromolecule organic.Intermediate layer 326 can
To include organic luminous layer (Emissive layer;EML).As other examples optional, remove
Including beyond organic luminous layer, intermediate layer 326 can also include hole injection layer (Hole injection
layer;HIL), hole transmission layer (Hole transport layer;HTL), electron transfer layer (Electron
transport layer;ETL), electron injecting layer (Electron injection layer;EIL) in
Any one.Present embodiment is not limited to this, and intermediate layer 326 includes organic luminous layer, and also can
To include other several functions layers.
Second electrode 327 can be on layer 326 formed between.Second electrode 327 is corresponding to common electrical
Pole.Similar to the first electrode 325, the second electrode 327 can be formed as transparency electrode or reflecting electrode.
When the first electrode 325 is formed as transparency electrode or reflecting electrode, it can be formed as and each
The form that the opening of sub-pixel is corresponding.On the contrary, the second electrode 327 can be by transparency electrode or reflection electricity
Pole is deposited on display part by entire surface.Alternatively, the second electrode 327 can also be formed by specific pattern
To substitute whole deposition.It should be appreciated that the first electrode 325 and the second electrode 327 can also be inverted position
And stacking.
It addition, the first electrode 325 is insulated from each other by intermediate layer 326 with the second electrode 327.When to
When one electrode 325 and the second electrode 327 apply voltage, intermediate layer 326 sends visible ray and realizes using
The discernible image in family.
Encapsulation part (Encapsulation) 340 can be formed on organic illuminating element OLED.Encapsulation
Portion 340 is to protect intermediate layer 326 and other thin film from the impact of outside moisture or oxygen etc.
Formed.
Encapsulation part 340 can be respectively to be laminated with an organic membrane and the structure of inoranic membrane.Such as,
Encapsulation part 340 can be to be laminated with such as epoxy resin, polyimides, polyethylene terephthalate
Ester, Merlon, polyethylene, at least one organic membrane 341,342 of polyacrylate etc. and all
Such as Si oxide (SiO2), silicon nitride (SiNx), aluminum oxide (Al2O3), titanyl
Thing (TiO2), Zirconium oxide (ZrOx), at least one inoranic membrane of zinc oxide (ZnO) etc.
343, the structure of 344,345.
Encapsulation part 340 can be to have at least one organic membrane 341,342 and at least two inoranic membrane
343, the structure of 344,345.The superiors 345 being exposed to outside in encapsulation part 340 can be by inorganic
Film is formed and infilters organic illuminating element OLED preventing water from dividing.
As mentioned above, although the embodiment shown in Can Zhaofutu describes the present invention,
But this is merely exemplary, it should be appreciated by those skilled in the art that can thus carry out many
Plant modification and the modification of embodiment.Therefore, the technical protection scope that the present invention is real should be by appended
Technological thought in claims defines.
The explanation of symbol
10: deposition mask frame
100: deposition mask
110: deposited picture portion
111: flank
120: edge part
130: depressed part
131: protruding
140: weld part
200: framework
201: the first supports
202: the second supports
203: the three supports
204: support
210: peristome
211: base portion
Claims (14)
1. a deposition mask, deposited material by described deposition masked-deposition to substrate with
Manufacture display device, comprising:
Deposited picture portion, passes through for described deposited material;
Flank, is connected with described deposited picture portion and supports described deposited picture portion;And
Depressed part, caves in over the ground with described substrate surface and is formed at described deposited picture portion and described flank
Periphery.
2. a deposition mask frame, including:
Framework;And
Deposition mask, its one side and described contact therewith and its another side in the face of substrate,
Wherein, described deposition mask includes:
Deposited picture portion, passes through for deposited material;
Flank, is connected with described deposited picture portion and supports described deposited picture portion;With
And
Depressed part, cave in over the ground with described substrate surface be formed at described deposited picture portion and
The periphery of described flank.
3. deposition mask frame as claimed in claim 2, wherein, described deposition is with covering
The edge part of mould is removed by cutting described depressed part.
4. deposition mask frame as claimed in claim 2, also includes:
Projection, protrudes from the bottom surface of described depressed part in the outside of described depressed part.
5. deposition mask frame as claimed in claim 4, wherein, the height of described projection
Degree is less than the degree of depth of described depressed part.
6. deposition mask frame as claimed in claim 2, wherein, described framework includes:
Base portion;And
Support, protrudes from described base portion, and its one side contacts with described deposition mask.
7. deposition mask frame as claimed in claim 6, wherein, described depressed part exists
The peripheral ends of described support is snapped on vertical direction.
8. deposition mask frame as claimed in claim 2, also includes:
Weld part, is arranged between described depressed part and described deposited picture portion, and to described frame
Frame is fixed with described deposition mask.
9. deposition uses a mask frame manufacture method, including:
Prepare the step of framework;
Preparing the step of deposition mask, wherein said deposition mask includes:
Deposited picture portion, passes through for deposited material;
Flank, is connected with described deposited picture portion and supports described deposited picture portion;With
And
Depressed part, caves in over the ground with substrate surface and is formed at described deposited picture portion and described
The periphery of flank;
By the step on described deposition mask alignment to described framework;And
Described depressed part cuts to remove the step of the edge part of described deposition mask.
10. deposition as claimed in claim 9 uses mask frame manufacture method, wherein, is going
Except in the step of described edge part, to described depressed part irradiating laser or with rotary knife cutter pair
Described depressed part cuts.
11. deposition mask frame manufacture methods as claimed in claim 10, wherein,
Remove in the step of described edge part, formed from described depression while described depressed part is cut
The projection that the bottom surface in portion is protruded.
12. depositions as claimed in claim 11 use mask frame manufacture method, wherein, institute
State the height degree of depth less than described depressed part of projection.
13. depositions as claimed in claim 10 use mask frame manufacture method, wherein, institute
State the width diameter more than the luminous point of described laser of depressed part.
14. depositions as claimed in claim 9 use mask frame manufacture method, by described heavy
Long-pending mask alignment also wraps between step and the step removing described edge part on described framework
Include:
Weld part is formed between described depressed part and described deposited picture portion with to described framework with
The step that described deposition mask is fixed.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020140150631A KR102321378B1 (en) | 2014-10-31 | 2014-10-31 | Mask for deposition, mask frame assembly for deposition, manufacturing method of the same |
KR10-2014-0150631 | 2014-10-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106191767A true CN106191767A (en) | 2016-12-07 |
CN106191767B CN106191767B (en) | 2019-06-04 |
Family
ID=56023134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510242242.6A Active CN106191767B (en) | 2014-10-31 | 2015-05-13 | Deposition mask, deposition mask frame and its manufacturing method |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR102321378B1 (en) |
CN (1) | CN106191767B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107829065A (en) * | 2017-10-27 | 2018-03-23 | 京东方科技集团股份有限公司 | A kind of aperture mask plate, motherboard and preparation method thereof, substrate, display device |
CN108034923A (en) * | 2018-01-24 | 2018-05-15 | 武汉华星光电半导体显示技术有限公司 | Mask assembly, mask frame and mask support frame |
CN111279012A (en) * | 2017-10-31 | 2020-06-12 | 夏普株式会社 | Method for manufacturing vapor deposition mask and display device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060102093A (en) * | 2005-03-22 | 2006-09-27 | 엘지전자 주식회사 | Apparatus and method of clamping mask for organic electro luminescence display device |
KR20060114463A (en) * | 2005-04-29 | 2006-11-07 | 엘지전자 주식회사 | Apparatus mask for organic electro luminescence display device and method of fabricating thereof |
CN101303504A (en) * | 2007-05-09 | 2008-11-12 | Lg.菲利浦Lcd株式会社 | Method for manufacturing flexible display substrate and flexible display device |
CN103205687A (en) * | 2012-01-16 | 2013-07-17 | 昆山允升吉光电科技有限公司 | Vapor plating mask plate and production method thereof |
CN103203551A (en) * | 2012-01-16 | 2013-07-17 | 昆山允升吉光电科技有限公司 | Method for removing mask plate auxiliary pattern |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004055231A (en) * | 2002-07-17 | 2004-02-19 | Dainippon Printing Co Ltd | Multiple attachment metal mask for vacuum deposition used for organic el element manufacturing |
-
2014
- 2014-10-31 KR KR1020140150631A patent/KR102321378B1/en active IP Right Grant
-
2015
- 2015-05-13 CN CN201510242242.6A patent/CN106191767B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060102093A (en) * | 2005-03-22 | 2006-09-27 | 엘지전자 주식회사 | Apparatus and method of clamping mask for organic electro luminescence display device |
KR20060114463A (en) * | 2005-04-29 | 2006-11-07 | 엘지전자 주식회사 | Apparatus mask for organic electro luminescence display device and method of fabricating thereof |
CN101303504A (en) * | 2007-05-09 | 2008-11-12 | Lg.菲利浦Lcd株式会社 | Method for manufacturing flexible display substrate and flexible display device |
CN103205687A (en) * | 2012-01-16 | 2013-07-17 | 昆山允升吉光电科技有限公司 | Vapor plating mask plate and production method thereof |
CN103203551A (en) * | 2012-01-16 | 2013-07-17 | 昆山允升吉光电科技有限公司 | Method for removing mask plate auxiliary pattern |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107829065A (en) * | 2017-10-27 | 2018-03-23 | 京东方科技集团股份有限公司 | A kind of aperture mask plate, motherboard and preparation method thereof, substrate, display device |
CN111279012A (en) * | 2017-10-31 | 2020-06-12 | 夏普株式会社 | Method for manufacturing vapor deposition mask and display device |
CN111279012B (en) * | 2017-10-31 | 2022-03-22 | 夏普株式会社 | Method for manufacturing vapor deposition mask and display device |
CN108034923A (en) * | 2018-01-24 | 2018-05-15 | 武汉华星光电半导体显示技术有限公司 | Mask assembly, mask frame and mask support frame |
CN108034923B (en) * | 2018-01-24 | 2020-06-05 | 武汉华星光电半导体显示技术有限公司 | Mask assembly, mask frame and mask support frame |
Also Published As
Publication number | Publication date |
---|---|
KR102321378B1 (en) | 2021-11-04 |
KR20160053241A (en) | 2016-05-13 |
CN106191767B (en) | 2019-06-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106207010A (en) | Mask frame, its manufacture method and organic light-emitting display device manufacture method | |
KR102203104B1 (en) | Flexible display device | |
CN106148890B (en) | Mask frame, its manufacturing method and organic light-emitting display device manufacturing method | |
EP3131132B1 (en) | Display apparatus and method of manufacturing the display apparatus | |
KR102273049B1 (en) | Mask frame assembly for thin film deposition | |
US9450185B2 (en) | Thin-film deposition mask, method of fabricating the same, and method of fabricating an organic light emitting display apparatus using the same | |
US9591745B2 (en) | Display apparatus reducing dead space | |
KR102194822B1 (en) | Display apparatus reducing dead space | |
KR102280269B1 (en) | Mask frame assembly for deposition, manufacturing method of the same | |
KR101074813B1 (en) | Organic light emitting devices and method of manufacturing the same | |
CN105870147A (en) | Display apparatus | |
EP3242341A1 (en) | Array substrate and manufacturing method therefor, display panel and display device | |
US20150318338A1 (en) | Method of manufacturing capacitor, method of manufacturing organic light emitting display device including the capacitor, and organic light emitting display device manufactured by using the method | |
CN102110706B (en) | Organic light emitting display and manufacture method thereof | |
KR102308906B1 (en) | Electrostatic chuck system and method for manufacturing organic light emitting display device using the same | |
CN106191768A (en) | Mask frame and manufacture method thereof | |
US9419028B1 (en) | Method of manufacturing display device and forming an alignment mark having concave and convex portions formed along a first pattern | |
CN105401123A (en) | Mask frame assembly and manufacturing method thereof | |
CN102891163B (en) | Organic electroluminescence display device | |
CN106191767A (en) | Deposition mask, deposition mask frame and manufacture method thereof | |
CN103531639B (en) | Thin film transistor (TFT) and preparation method thereof, array base palte, display device | |
US20230292556A1 (en) | Display apparatus and method of manufacturing the same | |
CN104701266A (en) | Pixel structure and manufacturing method thereof | |
CN102891164B (en) | Organic electroluminescence display device | |
US20220190273A1 (en) | Display apparatus and method of manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |