CN106180678B - A kind of method for preparing lead atom chain - Google Patents

A kind of method for preparing lead atom chain Download PDF

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CN106180678B
CN106180678B CN201610625045.7A CN201610625045A CN106180678B CN 106180678 B CN106180678 B CN 106180678B CN 201610625045 A CN201610625045 A CN 201610625045A CN 106180678 B CN106180678 B CN 106180678B
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lead
nano particle
graphene
atomic layer
atom chain
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CN106180678A (en
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万能
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Southeast University
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Southeast University
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/14—Treatment of metallic powder
    • B22F1/142—Thermal or thermo-mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009—Forming specific nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
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Abstract

The present invention provides a kind of method for preparing lead atom chain, comprises the following steps that：1st, graphene-structured is prepared；The number of plies of gained graphene-structured is more than one layer, contains atomic layer step；2nd, lead nano particle is deposited in graphenic surface；Lead nano particle is positioned over graphenic surface, the lead nanoparticle size is less than 100 nanometers；3rd, the graphene for being placed with lead nano particle in step 2 is heated to 300 500 degrees Celsius, implements electron beam irradiation to lead nano particle, beam energy is 60 300 kiloelectron-volts, and intensity is more than 1*105Individual electronics/square nanometers/second.It can be seen that lead nano particle diminishes in irradiation process, lead atom spreads at graphenic surface and atomic layer step；Stop irradiating immediately when the 4th, forming lead atom chain at atomic layer step, you can obtain the lead atom chain at step.The present invention realizes the preparation of lead atom chain structure, has significant meaning.

Description

A kind of method for preparing lead atom chain
Technical field
The invention belongs to atomic scale design of material and the technical field prepared, and in particular to one kind uses high-precision electronic Shu Jiagong, with reference to nano material deposition technology, prepare the technology of monatomic yardstick reel chain.
Background technology
With the continuous development of nanometer technology, the size of device constantly reduces, unimolecule even monatomic circuit it is general Thought has been suggested, and has been had part to have the research and development unit of farsighted seminar or company in the world and has been had begun to grind Study carefully unimolecule and monoatomic preparation and the technology for being applied to practical devices.The research of this technical field also becomes Future most likely promotes relevant industries and produces focus jumpy, and related research unit is presented increasingly in this field Keen competition situation, industry commanding elevation is captured in the hope of leading, gains the initiative by striking first, obtains long-term competitive advantage.At present, unimolecule The related research of circuit has had some breakthroughs, but monatomic related technology just starts to develop.Than it is more typical such as：Make The chain structure of single atom dimension, namely Chains can be prepared with grapheme material.Phase in this chain structure Adjacent carbon atom bonding is usually the form that the key of double bond-three is alternately arranged, and this structure has extraordinary stability.Nearest report Road shows that this structure can be up to some tens of pm.The carbon-chain structure of just so-so length needs to be formed in CNT, can not Can exist for a long time in a manner of self-supporting.At present, typically only 10 nanometers of most Long carbon chain structure for being capable of self-supporting is reported Left and right.Certainly, in actual applications, the carbochain of supporting construction meets device needs, and does not need the structure of self-supporting.For This, can prepare supporting construction, and the Chains structure of greater depth can meet the application possibility of correlation.
The content of the invention
The content of the invention：The present invention passes through electron beam irradiation lead using the lead nano particle for being deposited on few layer graphene surface The method of nano particle, the atom on lead surface is gradually peeled off and diffuse to graphenic surface.These subsequent lead atoms are in few layer Arranged at the atomic stepses of graphenic surface, form Chains structure.
Technical scheme is：A kind of method for preparing lead atom chain, is comprised the following steps that：
Step 1: prepare graphene-structured；The number of plies of gained graphene-structured is more than one layer, contains atomic layer step；
Step 2: deposit lead nano particle is in graphenic surface；Lead nano particle is deposited on graphenic surface, the lead Nanoparticle size is less than 100 nanometers.It is visible after guarantee electron beam irradiation, do not block electron beam；
Step 3: the graphene for being placed with lead nano particle in step 2 is heated into 300-500 degrees Celsius, lead is received Rice grain implements electron beam irradiation, and beam energy is 60-300 kiloelectron-volts, and intensity is more than 1*105Individual electronics/square nanometers/ Second, it can be seen that lead nano particle diminishes, and lead atom spreads at graphenic surface and atomic layer step；Because lead particle due to Can be in the original of graphene-structured when the surface lead atom speed that discharges of sputtering is more than 1000 ± 600/second after being irradiated Lead atom chain is formed at sub- step.
Step 4: stop irradiating immediately when forming the lead atom chain of certain length at atomic layer step, you can obtain platform Lead atom chain at rank.
Further, in step 1, for single layer structure, the atomic layer step is exactly the edge of graphene；For N layers Graphene, N is more than 1, and the atomic layer step is that the places of N-1 layer graphenes, namely Step-edge Junction are transitioned into from N layer graphenes The place of structure.
Beneficial effect：At present, the only carbon atom of Chains structure can be realized.The Chains of other materials are also not Appear in the newspapers.The present invention is based on a kind of micro-processing technology, realizes the preparation of lead atom chain structure.Research after can apply to And the structure of practical devices.With significant meaning.
The present invention passes through electron beam irradiation lead nano particle using the lead nano particle for being deposited on few layer graphene surface Method, the atom on lead surface is gradually peeled off and diffuse to graphenic surface.These subsequent lead atoms are on few layer graphene surface Atomic stepses at arranged, formed Chains structure.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the result schematic diagram of embodiment one；
Fig. 3 is the result schematic diagram of embodiment two；TEM pictures, elliptic region show lead atom chain forming region.
In figure：1：The edge of single-layer graphene；2：Individual layer is transitioned into the step of double layer area；3 single-layer graphene regions；4： Bilayer graphene region；5：Lead nano particle；6：The lead atom chain formed at step.Arrow therein represents lead atom in graphite The diffusion on alkene surface.
Embodiment
The present invention is described further below in conjunction with the accompanying drawings.
A kind of method for preparing lead atom chain, is comprised the following steps that：
1. prepare graphene-structured.The number of plies of graphene should be more than one layer.Particularly, it should contain atomic layer step Structure.For single layer structure, this step is exactly the edge of graphene；For two layers of graphene (as shown in Figure 1), wherein The place that single-layer graphene is transitioned into from two layer graphenes, namely the place of the ledge structure should be contained；Multi-layer graphene In ledge structure by that analogy.
2. lead nano particle is deposited in graphenic surface.Lead nanoparticle size needs to be less than 100 nanometers, ensures electron beam It is visible after irradiation, do not block electron beam.Nano particle more than 100 nanometers is not easy to carry out surface irradiation and sputtering.
3. heating the sample to 300-500 degrees Celsius, lead nano particle is implemented to irradiate, beam energy is 60-300 thousand Electron volts, intensity are more than 1*105Individual electronics/square nanometers/second, it can be seen that lead nano particle substantially diminishes, and lead atom is in stone Spread at black alkene surface and step.
4. optionally, stop irradiating immediately when seeing and forming lead atom chain at step.The lead that can be obtained at step is former Subchain.
Principle：Electron irradiation causes the atom of surface of metal particles to be sputtered, and these atoms can enter along graphenic surface Row diffusion.For graphenic surface due to being chemically inert, atom or molecule are difficult to be formed to arrange on its surface, still, graphite Alkene edge can capture metallic atom and promote to form it into chain structure.Lead atom chain can only be formed at step.Electron beam spoke Sputtered according to needing to cause the surface of lead atom.Lead atom chain is unstable under electron beam irradiation, needs to stop immediately once formed Only irradiate.
Embodiment one：
Step 1: prepare graphene-structured；The number of plies of gained graphene-structured is multilayer, contains atomic layer step；
Step 2: deposit lead nano particle is in graphenic surface；Lead nano particle is positioned over graphenic surface, the lead 4 nanometers of nanoparticle size, ensure electron beam irradiation after it is visible, do not block electron beam；Nano particle inconvenience more than 100 nanometers In progress surface irradiation and sputtering.
Step 3: the graphene for being placed with lead nano particle in step 2 is heated to 300 degrees Celsius, to lead nanometer Grain implements electron beam irradiation, and beam energy is 300 kiloelectron-volts, intensity~2e5 electronics/square nanometers/second, it can be seen that Lead nano particle diminishes, and lead atom spreads at graphenic surface and atomic layer step；
Step 4: stop irradiating immediately when forming lead atom chain at atomic layer step, you can the lead obtained at step is former Subchain, as shown in Figure 2.
Embodiment two：
Step 1: prepare graphene-structured；The number of plies of gained graphene-structured is multilayer, contains atomic layer step；
Step 2: deposit lead nano particle is in graphenic surface；Lead nano particle is positioned over graphenic surface, the lead 3 nanometers of nanoparticle size, ensure electron beam irradiation after it is visible, do not block electron beam；Nano particle inconvenience more than 100 nanometers In progress surface irradiation and sputtering.
Step 3: the graphene for being placed with lead nano particle in step 2 is heated to 500 degrees Celsius, to lead nanometer Grain implements electron beam irradiation, and beam energy is 300 kiloelectron-volts, intensity~1.3e6 electronics/square nanometers/second, can be seen Diminish to lead nano particle, lead atom spreads at graphenic surface and atomic layer step；
Step 4: stop irradiating immediately when forming lead atom chain at atomic layer step, you can the lead obtained at step is former Subchain, as shown in Figure 3.
Embodiment three：
Step 1: prepare graphene-structured；The number of plies of gained graphene-structured is multilayer, contains atomic layer step；
Step 2: deposit lead nano particle is in graphenic surface；Lead nano particle is positioned over graphenic surface, the lead 50 nanometers of nanoparticle size, ensure electron beam irradiation after it is visible, do not block electron beam；Nano particle more than 100 nanometers is not It is convenient for surface irradiation and sputtering.
Step 3: the graphene for being placed with lead nano particle in step 2 is heated to 400 degrees Celsius, to lead nanometer Grain implements electron beam irradiation, and beam energy is 60 kiloelectron-volts, intensity~1.3e6 electronics/square nanometers/second, can be seen Diminish to lead nano particle, lead atom spreads at graphenic surface and atomic layer step；
Step 4: stop irradiating immediately when forming lead atom chain at atomic layer step, you can the lead obtained at step is former Subchain,.
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should It is considered as protection scope of the present invention.

Claims (2)

  1. A kind of 1. method for preparing lead atom chain, it is characterised in that：Comprise the following steps that：
    Step 1: prepare graphene-structured；The number of plies of gained graphene-structured is more than one layer, contains atomic layer step；
    Step 2: deposit lead nano particle is in graphenic surface；Lead nano particle is deposited on graphenic surface, the lead nanometer Particle size is visible after guarantee electron beam irradiation less than 100 nanometers, does not block electron beam；
    Step 3: the graphene for being placed with lead nano particle in step 2 is heated to 300-500 degrees Celsius, to lead nanometer Grain implements electron beam irradiation, and beam energy is 60-300 kiloelectron-volts, and intensity is more than 1*105Individual electronics/(square nanometers Second), it can be seen that lead nano particle diminishes, and lead atom spreads at graphenic surface and atomic layer step；
    Step 4: stop irradiating immediately when forming the lead atom chain of certain length at atomic layer step, you can obtain at step Lead atom chain.
  2. A kind of 2. method for preparing lead atom chain according to claim 1, it is characterised in that：In step 1, for individual layer Structure, the atomic layer step are exactly the edge of graphene；For the graphene of N layers, N is more than 1, the atomic layer step be from N layer graphenes are transitioned into the place of N-1 layer graphenes, namely the place of ledge structure.
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Address after: 210093 Nanjing University Science Park, 22 Hankou Road, Gulou District, Nanjing City, Jiangsu Province

Patentee after: Southeast University

Address before: 211189 No. 2 Southeast University Road, Jiangning District, Nanjing, Jiangsu

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