CN106180678A - A kind of method preparing lead atom chain - Google Patents
A kind of method preparing lead atom chain Download PDFInfo
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- CN106180678A CN106180678A CN201610625045.7A CN201610625045A CN106180678A CN 106180678 A CN106180678 A CN 106180678A CN 201610625045 A CN201610625045 A CN 201610625045A CN 106180678 A CN106180678 A CN 106180678A
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- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 10
- 239000002105 nanoparticle Substances 0.000 claims abstract description 43
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 26
- 238000010894 electron beam technology Methods 0.000 claims abstract description 22
- 229910052745 lead Inorganic materials 0.000 claims abstract description 10
- 238000002360 preparation method Methods 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 33
- 239000002356 single layer Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims 1
- 125000004429 atom Chemical group 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 235000013339 cereals Nutrition 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 150000001336 alkenes Chemical class 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000003467 diminishing effect Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 206010020675 Hypermetropia Diseases 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- -1 graphite Alkene Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/14—Treatment of metallic powder
- B22F1/142—Thermal or thermo-mechanical treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0009—Forming specific nanostructures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
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- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The present invention provides a kind of method preparing lead atom chain, specifically comprises the following steps that 1, prepares graphene-structured；The number of plies of gained graphene-structured is more than one layer, containing atomic layer step；2, deposit lead nano-particle is at graphenic surface；Lead nano-particle is positioned over graphenic surface, and described lead nanoparticle size is less than 100 nanometers；3, the Graphene being placed with lead nano-particle in step 2 being heated to 300 500 degrees Celsius, lead nano-particle is implemented electron beam irradiation, beam energy is 60 300 kiloelectron-volts, and intensity is more than 1*105Individual electronics/square nanometers/second.It can be seen that lead nano-particle diminishes in irradiation process, lead atom spreads at graphenic surface and atomic layer step；Stop irradiation immediately when 4, forming lead atom chain at atomic layer step, the lead atom chain at step can be obtained.Present invention achieves the preparation of lead atom chain structure, there is significant meaning.
Description
Technical field
The invention belongs to the technical field of atomic scale design of material and preparation, be specifically related to a kind of use high-precision electronic
Shu Jiagong, in conjunction with nano material deposition technology, prepares the technology of monatomic scale length chain.
Background technology
Along with the development of nanotechnology, the size of device constantly reduces, the most monatomic circuit of unimolecule general
Reading and be suggested, the research and development unit having had part to have farsighted seminar or company has begun to grind
Study carefully unimolecule and monoatomic preparation and be applied to the technology of practical devices.The research of this technical field also becomes
Most likely promoting relevant industries future and produce focus jumpy, relevant research unit presents increasingly in this field
Keen competition situation, captures industry commanding elevation in the hope of leading, gains the initiative by striking first, it is thus achieved that long-term competitive advantage.At present, unimolecule
The research that circuit is relevant has had some breakthroughs, but monatomic relevant technology just starts development.Than more typical such as: make
The chain structure of single atom dimension, namely Chains can be prepared with grapheme material.Phase in this chain structure
Adjacent carbon atom key is usually the form that double bond-three key is alternately arranged, and this structure has extraordinary stability.Nearest report
Road shows, this structure can be up to some tens of pm.The carbon-chain structure of just so-so length needs to be formed in CNT, can not
Can exist for a long time in the way of self-supporting.At present, reported can self-supporting Long carbon chain structure typically only have 10 nanometers
Left and right.Certainly, in actual applications, the carbochain of supporting construction meets device needs, is not required to the structure of self-supporting.For
This, it is possible to preparing supporting construction, the Chains structure of greater depth can meet relevant application possibility.
Summary of the invention
Summary of the invention: the present invention uses the lead nano-particle being deposited on few layer graphene surface, by electron beam irradiation lead
The method of nano-particle, makes the atom on lead surface gradually peel off and diffuse to graphenic surface.These lead atoms are at few layer subsequently
Arrange at the atomic steps of graphenic surface, form Chains structure.
Technical scheme is: a kind of method preparing lead atom chain, specifically comprises the following steps that
Step one, preparation graphene-structured；The number of plies of gained graphene-structured is more than one layer, containing atomic layer step；
Step 2, deposit lead nano-particle are at graphenic surface；Lead nano-particle is deposited on graphenic surface, described lead
Nanoparticle size is less than 100 nanometers.Ensure after electron beam irradiation visible, do not block electron beam；
Step 3, the Graphene being placed with lead nano-particle in step 2 is heated to 300-500 degree Celsius, lead is received
Rice grain implements electron beam irradiation, and beam energy is 60-300 kiloelectron-volt, and intensity is more than 1*105Individual electronics/square nanometers/
Second, it can be seen that lead nano-particle diminishes, and lead atom spreads at graphenic surface and atomic layer step；Because lead granule due to
Can former in graphene-structured more than during 1000 ± 600/second by the lead atom speed that discharges of irradiation rear surface sputtering
Lead atom chain is formed at sub-step.
Step 4, at atomic layer step formed certain length lead atom chain time stop irradiation immediately, platform can be obtained
Lead atom chain at rank.
Further, in step one, for single layer structure, described atomic layer step is exactly the edge of Graphene；For N shell
Graphene, N be more than 1, described atomic layer step is the place being transitioned into N-1 layer graphene from N shell Graphene, namely Step-edge Junction
The place of structure.
Beneficial effect: at present, it is possible to realize the only carbon atom of Chains structure.The Chains of other materials is the most not
Appear in the newspapers.The present invention is based on a kind of micro-processing technology, it is achieved that the preparation of lead atom chain structure.Research after can apply to
And the structure of practical devices.There is significant meaning.
The present invention uses the lead nano-particle being deposited on few layer graphene surface, by electron beam irradiation lead nano-particle
Method, makes the atom on lead surface gradually peel off and diffuse to graphenic surface.These lead atoms are on few layer graphene surface subsequently
Atomic steps at arrange, formed Chains structure.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the result schematic diagram of embodiment one；
Fig. 3 is the result schematic diagram of embodiment two；TEM picture, elliptic region display lead atom chain formation region.
In figure: 1: the edge of single-layer graphene；2: monolayer is transitioned into the step of double layer area；3 single-layer graphene regions；4:
Bilayer graphene region；5: lead nano-particle；6: the lead atom chain formed at step.Arrow therein represents that lead atom is at graphite
The diffusion on alkene surface.
Detailed description of the invention
The present invention is described further below in conjunction with the accompanying drawings.
A kind of method preparing lead atom chain, specifically comprises the following steps that
1. preparation graphene-structured.The number of plies of Graphene should be more than one layer.Particularly, it should containing atomic layer step
Structure.For single layer structure, this step is exactly the edge of Graphene；For the Graphene (as shown in Figure 1) of two-layer, wherein
The place being transitioned into single-layer graphene from two layer graphenes, namely the place of described ledge structure should be contained；Multi-layer graphene
In ledge structure by that analogy.
2. deposit lead nano-particle is at graphenic surface.Lead nanoparticle size needs less than 100 nanometers, it is ensured that electron beam
After irradiation visible, do not block electron beam.It is not easy to carry out surface irradiation and sputtering more than the nano-particle of 100 nanometers.
3. heating the sample to 300-500 degree Celsius, lead nano-particle is implemented irradiation, beam energy is 60-300 thousand
Electron volts, intensity is more than 1*105Individual electronics/square nanometers/second, it can be seen that lead nano-particle substantially diminishes, and lead atom is at stone
Spread at ink alkene surface and step.
The most optionally, irradiation is stopped immediately when seeing and forming lead atom chain at step.The lead at step can be obtained former
Subchain.
Principle: electron irradiation causes the atom of surface of metal particles to be sputtered, and these atoms can enter along graphenic surface
Row diffusion.Graphenic surface is owing to being chemically inert, and atom or molecule are difficult to be formed arrangement on its surface, but, graphite
Alkene edge can capture metallic atom and rush forms it into chain structure.Lead atom chain can only be formed at step.Electron beam spoke
Sputter according to needing the surface causing lead atom.Lead atom chain is unstable under electron beam irradiation, needs to stop immediately after once being formed
Only irradiation.
Embodiment one:
Step one, preparation graphene-structured；The number of plies of gained graphene-structured is multilamellar, containing atomic layer step；
Step 2, deposit lead nano-particle are at graphenic surface；Lead nano-particle is positioned over graphenic surface, described lead
Nanoparticle size 4 nanometer, it is ensured that visible after electron beam irradiation, does not block electron beam；Nano-particle inconvenience more than 100 nanometers
In carrying out surface irradiation and sputtering.
Step 3, the Graphene being placed with lead nano-particle in step 2 is heated to 300 degrees Celsius, to lead nanometer
Grain implements electron beam irradiation, and beam energy is 300 kiloelectron-volts, intensity～2e5 electronics/square nanometers/second, it can be seen that
Lead nano-particle diminishes, and lead atom spreads at graphenic surface and atomic layer step；
Step 4, at atomic layer step formed lead atom chain time stop irradiation immediately, the lead at step can be obtained former
Subchain, as shown in Figure 2.
Embodiment two:
Step one, preparation graphene-structured；The number of plies of gained graphene-structured is multilamellar, containing atomic layer step；
Step 2, deposit lead nano-particle are at graphenic surface；Lead nano-particle is positioned over graphenic surface, described lead
Nanoparticle size 3 nanometer, it is ensured that visible after electron beam irradiation, does not block electron beam；Nano-particle inconvenience more than 100 nanometers
In carrying out surface irradiation and sputtering.
Step 3, the Graphene being placed with lead nano-particle in step 2 is heated to 500 degrees Celsius, to lead nanometer
Grain implements electron beam irradiation, and beam energy is 300 kiloelectron-volts, intensity～1.3e6 electronics/square nanometers/second, it is possible to see
Diminishing to lead nano-particle, lead atom spreads at graphenic surface and atomic layer step；
Step 4, at atomic layer step formed lead atom chain time stop irradiation immediately, the lead at step can be obtained former
Subchain, as shown in Figure 3.
Embodiment three:
Step one, preparation graphene-structured；The number of plies of gained graphene-structured is multilamellar, containing atomic layer step；
Step 2, deposit lead nano-particle are at graphenic surface；Lead nano-particle is positioned over graphenic surface, described lead
Nanoparticle size 50 nanometer, it is ensured that visible after electron beam irradiation, does not block electron beam；More than 100 nanometers nano-particle not
It is convenient for surface irradiation and sputtering.
Step 3, the Graphene being placed with lead nano-particle in step 2 is heated to 400 degrees Celsius, to lead nanometer
Grain implements electron beam irradiation, and beam energy is 60 kiloelectron-volts, intensity～1.3e6 electronics/square nanometers/second, it is possible to see
Diminishing to lead nano-particle, lead atom spreads at graphenic surface and atomic layer step；
Step 4, at atomic layer step formed lead atom chain time stop irradiation immediately, the lead at step can be obtained former
Subchain,.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For Yuan, under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (2)
1. the method preparing lead atom chain, it is characterised in that: specifically comprise the following steps that
Step one, preparation graphene-structured；The number of plies of gained graphene-structured is more than one layer, containing atomic layer step；
Step 2, deposit lead nano-particle are at graphenic surface；Lead nano-particle is deposited on graphenic surface, described lead nanometer
Particle size is less than 100 nanometers.Ensure after electron beam irradiation visible, do not block electron beam；
Step 3, the Graphene being placed with lead nano-particle in step 2 is heated to 300-500 degree Celsius, to lead nanometer
Grain implements electron beam irradiation, and beam energy is 60-300 kiloelectron-volt, and intensity is more than 1*105Individual electronics/square nanometers/second,
It can be seen that lead nano-particle diminishes, lead atom spreads at graphenic surface and atomic layer step；
Step 4, at atomic layer step formed certain length lead atom chain time stop irradiation immediately, can obtain at step
Lead atom chain.
A kind of method preparing lead atom chain the most according to claim 1, it is characterised in that: in step one, for monolayer
Structure, described atomic layer step is exactly the edge of Graphene；For the Graphene of N shell, N is more than 1, described atomic layer step be from
N shell Graphene is transitioned into the place of N-1 layer graphene, namely the place of ledge structure.
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| CN201610625045.7A CN106180678B (en) | 2016-08-02 | 2016-08-02 | A kind of method for preparing lead atom chain |
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| CN201610625045.7A CN106180678B (en) | 2016-08-02 | 2016-08-02 | A kind of method for preparing lead atom chain |
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| CN106180678B CN106180678B (en) | 2018-02-13 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107598155A (en) * | 2017-09-08 | 2018-01-19 | 中国科学院合肥物质科学研究院 | Lead nano particle and preparation method thereof |
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|---|---|---|---|---|
| JP2005238388A (en) * | 2004-02-26 | 2005-09-08 | Nagoya Institute Of Technology | Carbon nano structure, its manufacturing method, its cutting method, probe having this structure and electric field electron emitting source |
| CN102492926A (en) * | 2011-12-16 | 2012-06-13 | 东南大学 | Preparation method for grapheme thin film with local monoatomic layer |
| CN102912174A (en) * | 2012-11-08 | 2013-02-06 | 浙江南都电源动力股份有限公司 | Lead and graphene composite material |
| CN104401964A (en) * | 2014-11-11 | 2015-03-11 | 东南大学 | Preparation method of fullerene nano structure |
| CN104445139A (en) * | 2014-11-04 | 2015-03-25 | 东南大学 | Method for preparing single-wall carbon nanotube |
| CN104692367A (en) * | 2015-01-30 | 2015-06-10 | 东南大学 | Preparation method of metallic graphene |
| CN105063556A (en) * | 2015-07-17 | 2015-11-18 | 中国科学院合肥物质科学研究院 | Method for preparing nano metal particle array on graphene |
-
2016
- 2016-08-02 CN CN201610625045.7A patent/CN106180678B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005238388A (en) * | 2004-02-26 | 2005-09-08 | Nagoya Institute Of Technology | Carbon nano structure, its manufacturing method, its cutting method, probe having this structure and electric field electron emitting source |
| CN102492926A (en) * | 2011-12-16 | 2012-06-13 | 东南大学 | Preparation method for grapheme thin film with local monoatomic layer |
| CN102912174A (en) * | 2012-11-08 | 2013-02-06 | 浙江南都电源动力股份有限公司 | Lead and graphene composite material |
| CN104445139A (en) * | 2014-11-04 | 2015-03-25 | 东南大学 | Method for preparing single-wall carbon nanotube |
| CN104401964A (en) * | 2014-11-11 | 2015-03-11 | 东南大学 | Preparation method of fullerene nano structure |
| CN104692367A (en) * | 2015-01-30 | 2015-06-10 | 东南大学 | Preparation method of metallic graphene |
| CN105063556A (en) * | 2015-07-17 | 2015-11-18 | 中国科学院合肥物质科学研究院 | Method for preparing nano metal particle array on graphene |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107598155A (en) * | 2017-09-08 | 2018-01-19 | 中国科学院合肥物质科学研究院 | Lead nano particle and preparation method thereof |
| CN107598155B (en) * | 2017-09-08 | 2019-08-23 | 中国科学院合肥物质科学研究院 | The preparation method of lead nano particle |
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Address after: 210093 Nanjing University Science Park, 22 Hankou Road, Gulou District, Nanjing City, Jiangsu Province Patentee after: SOUTHEAST University Address before: 211189 No. 2 Southeast University Road, Jiangning District, Nanjing, Jiangsu Patentee before: Southeast University |
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Granted publication date: 20180213 |