CN106180678A - A kind of method preparing lead atom chain - Google Patents

A kind of method preparing lead atom chain Download PDF

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Publication number
CN106180678A
CN106180678A CN201610625045.7A CN201610625045A CN106180678A CN 106180678 A CN106180678 A CN 106180678A CN 201610625045 A CN201610625045 A CN 201610625045A CN 106180678 A CN106180678 A CN 106180678A
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lead
graphene
particle
nano
atomic layer
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CN106180678B (en
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万能
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Southeast University
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Southeast University
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/14—Treatment of metallic powder
    • B22F1/142—Thermal or thermo-mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009—Forming specific nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

The present invention provides a kind of method preparing lead atom chain, specifically comprises the following steps that 1, prepares graphene-structured；The number of plies of gained graphene-structured is more than one layer, containing atomic layer step；2, deposit lead nano-particle is at graphenic surface；Lead nano-particle is positioned over graphenic surface, and described lead nanoparticle size is less than 100 nanometers；3, the Graphene being placed with lead nano-particle in step 2 being heated to 300 500 degrees Celsius, lead nano-particle is implemented electron beam irradiation, beam energy is 60 300 kiloelectron-volts, and intensity is more than 1*105Individual electronics/square nanometers/second.It can be seen that lead nano-particle diminishes in irradiation process, lead atom spreads at graphenic surface and atomic layer step；Stop irradiation immediately when 4, forming lead atom chain at atomic layer step, the lead atom chain at step can be obtained.Present invention achieves the preparation of lead atom chain structure, there is significant meaning.

Description

A kind of method preparing lead atom chain
Technical field
The invention belongs to the technical field of atomic scale design of material and preparation, be specifically related to a kind of use high-precision electronic Shu Jiagong, in conjunction with nano material deposition technology, prepares the technology of monatomic scale length chain.
Background technology
Along with the development of nanotechnology, the size of device constantly reduces, the most monatomic circuit of unimolecule general Reading and be suggested, the research and development unit having had part to have farsighted seminar or company has begun to grind Study carefully unimolecule and monoatomic preparation and be applied to the technology of practical devices.The research of this technical field also becomes Most likely promoting relevant industries future and produce focus jumpy, relevant research unit presents increasingly in this field Keen competition situation, captures industry commanding elevation in the hope of leading, gains the initiative by striking first, it is thus achieved that long-term competitive advantage.At present, unimolecule The research that circuit is relevant has had some breakthroughs, but monatomic relevant technology just starts development.Than more typical such as: make The chain structure of single atom dimension, namely Chains can be prepared with grapheme material.Phase in this chain structure Adjacent carbon atom key is usually the form that double bond-three key is alternately arranged, and this structure has extraordinary stability.Nearest report Road shows, this structure can be up to some tens of pm.The carbon-chain structure of just so-so length needs to be formed in CNT, can not Can exist for a long time in the way of self-supporting.At present, reported can self-supporting Long carbon chain structure typically only have 10 nanometers Left and right.Certainly, in actual applications, the carbochain of supporting construction meets device needs, is not required to the structure of self-supporting.For This, it is possible to preparing supporting construction, the Chains structure of greater depth can meet relevant application possibility.
Summary of the invention
Summary of the invention: the present invention uses the lead nano-particle being deposited on few layer graphene surface, by electron beam irradiation lead The method of nano-particle, makes the atom on lead surface gradually peel off and diffuse to graphenic surface.These lead atoms are at few layer subsequently Arrange at the atomic steps of graphenic surface, form Chains structure.
Technical scheme is: a kind of method preparing lead atom chain, specifically comprises the following steps that
Step one, preparation graphene-structured；The number of plies of gained graphene-structured is more than one layer, containing atomic layer step；
Step 2, deposit lead nano-particle are at graphenic surface；Lead nano-particle is deposited on graphenic surface, described lead Nanoparticle size is less than 100 nanometers.Ensure after electron beam irradiation visible, do not block electron beam；
Step 3, the Graphene being placed with lead nano-particle in step 2 is heated to 300-500 degree Celsius, lead is received Rice grain implements electron beam irradiation, and beam energy is 60-300 kiloelectron-volt, and intensity is more than 1*105Individual electronics/square nanometers/ Second, it can be seen that lead nano-particle diminishes, and lead atom spreads at graphenic surface and atomic layer step；Because lead granule due to Can former in graphene-structured more than during 1000 ± 600/second by the lead atom speed that discharges of irradiation rear surface sputtering Lead atom chain is formed at sub-step.
Step 4, at atomic layer step formed certain length lead atom chain time stop irradiation immediately, platform can be obtained Lead atom chain at rank.
Further, in step one, for single layer structure, described atomic layer step is exactly the edge of Graphene；For N shell Graphene, N be more than 1, described atomic layer step is the place being transitioned into N-1 layer graphene from N shell Graphene, namely Step-edge Junction The place of structure.
Beneficial effect: at present, it is possible to realize the only carbon atom of Chains structure.The Chains of other materials is the most not Appear in the newspapers.The present invention is based on a kind of micro-processing technology, it is achieved that the preparation of lead atom chain structure.Research after can apply to And the structure of practical devices.There is significant meaning.
The present invention uses the lead nano-particle being deposited on few layer graphene surface, by electron beam irradiation lead nano-particle Method, makes the atom on lead surface gradually peel off and diffuse to graphenic surface.These lead atoms are on few layer graphene surface subsequently Atomic steps at arrange, formed Chains structure.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the result schematic diagram of embodiment one；
Fig. 3 is the result schematic diagram of embodiment two；TEM picture, elliptic region display lead atom chain formation region.
In figure: 1: the edge of single-layer graphene；2: monolayer is transitioned into the step of double layer area；3 single-layer graphene regions；4: Bilayer graphene region；5: lead nano-particle；6: the lead atom chain formed at step.Arrow therein represents that lead atom is at graphite The diffusion on alkene surface.
Detailed description of the invention
The present invention is described further below in conjunction with the accompanying drawings.
A kind of method preparing lead atom chain, specifically comprises the following steps that
1. preparation graphene-structured.The number of plies of Graphene should be more than one layer.Particularly, it should containing atomic layer step Structure.For single layer structure, this step is exactly the edge of Graphene；For the Graphene (as shown in Figure 1) of two-layer, wherein The place being transitioned into single-layer graphene from two layer graphenes, namely the place of described ledge structure should be contained；Multi-layer graphene In ledge structure by that analogy.
2. deposit lead nano-particle is at graphenic surface.Lead nanoparticle size needs less than 100 nanometers, it is ensured that electron beam After irradiation visible, do not block electron beam.It is not easy to carry out surface irradiation and sputtering more than the nano-particle of 100 nanometers.
3. heating the sample to 300-500 degree Celsius, lead nano-particle is implemented irradiation, beam energy is 60-300 thousand Electron volts, intensity is more than 1*105Individual electronics/square nanometers/second, it can be seen that lead nano-particle substantially diminishes, and lead atom is at stone Spread at ink alkene surface and step.
The most optionally, irradiation is stopped immediately when seeing and forming lead atom chain at step.The lead at step can be obtained former Subchain.
Principle: electron irradiation causes the atom of surface of metal particles to be sputtered, and these atoms can enter along graphenic surface Row diffusion.Graphenic surface is owing to being chemically inert, and atom or molecule are difficult to be formed arrangement on its surface, but, graphite Alkene edge can capture metallic atom and rush forms it into chain structure.Lead atom chain can only be formed at step.Electron beam spoke Sputter according to needing the surface causing lead atom.Lead atom chain is unstable under electron beam irradiation, needs to stop immediately after once being formed Only irradiation.
Embodiment one:
Step one, preparation graphene-structured；The number of plies of gained graphene-structured is multilamellar, containing atomic layer step；
Step 2, deposit lead nano-particle are at graphenic surface；Lead nano-particle is positioned over graphenic surface, described lead Nanoparticle size 4 nanometer, it is ensured that visible after electron beam irradiation, does not block electron beam；Nano-particle inconvenience more than 100 nanometers In carrying out surface irradiation and sputtering.
Step 3, the Graphene being placed with lead nano-particle in step 2 is heated to 300 degrees Celsius, to lead nanometer Grain implements electron beam irradiation, and beam energy is 300 kiloelectron-volts, intensity～2e5 electronics/square nanometers/second, it can be seen that Lead nano-particle diminishes, and lead atom spreads at graphenic surface and atomic layer step；
Step 4, at atomic layer step formed lead atom chain time stop irradiation immediately, the lead at step can be obtained former Subchain, as shown in Figure 2.
Embodiment two:
Step one, preparation graphene-structured；The number of plies of gained graphene-structured is multilamellar, containing atomic layer step；
Step 2, deposit lead nano-particle are at graphenic surface；Lead nano-particle is positioned over graphenic surface, described lead Nanoparticle size 3 nanometer, it is ensured that visible after electron beam irradiation, does not block electron beam；Nano-particle inconvenience more than 100 nanometers In carrying out surface irradiation and sputtering.
Step 3, the Graphene being placed with lead nano-particle in step 2 is heated to 500 degrees Celsius, to lead nanometer Grain implements electron beam irradiation, and beam energy is 300 kiloelectron-volts, intensity～1.3e6 electronics/square nanometers/second, it is possible to see Diminishing to lead nano-particle, lead atom spreads at graphenic surface and atomic layer step；
Step 4, at atomic layer step formed lead atom chain time stop irradiation immediately, the lead at step can be obtained former Subchain, as shown in Figure 3.
Embodiment three:
Step one, preparation graphene-structured；The number of plies of gained graphene-structured is multilamellar, containing atomic layer step；
Step 2, deposit lead nano-particle are at graphenic surface；Lead nano-particle is positioned over graphenic surface, described lead Nanoparticle size 50 nanometer, it is ensured that visible after electron beam irradiation, does not block electron beam；More than 100 nanometers nano-particle not It is convenient for surface irradiation and sputtering.
Step 3, the Graphene being placed with lead nano-particle in step 2 is heated to 400 degrees Celsius, to lead nanometer Grain implements electron beam irradiation, and beam energy is 60 kiloelectron-volts, intensity～1.3e6 electronics/square nanometers/second, it is possible to see Diminishing to lead nano-particle, lead atom spreads at graphenic surface and atomic layer step；
Step 4, at atomic layer step formed lead atom chain time stop irradiation immediately, the lead at step can be obtained former Subchain,.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art For Yuan, under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these improvements and modifications also should It is considered as protection scope of the present invention.

Claims (2)

1. the method preparing lead atom chain, it is characterised in that: specifically comprise the following steps that
Step one, preparation graphene-structured；The number of plies of gained graphene-structured is more than one layer, containing atomic layer step；
Step 2, deposit lead nano-particle are at graphenic surface；Lead nano-particle is deposited on graphenic surface, described lead nanometer Particle size is less than 100 nanometers.Ensure after electron beam irradiation visible, do not block electron beam；
Step 3, the Graphene being placed with lead nano-particle in step 2 is heated to 300-500 degree Celsius, to lead nanometer Grain implements electron beam irradiation, and beam energy is 60-300 kiloelectron-volt, and intensity is more than 1*105Individual electronics/square nanometers/second, It can be seen that lead nano-particle diminishes, lead atom spreads at graphenic surface and atomic layer step；
Step 4, at atomic layer step formed certain length lead atom chain time stop irradiation immediately, can obtain at step Lead atom chain.
A kind of method preparing lead atom chain the most according to claim 1, it is characterised in that: in step one, for monolayer Structure, described atomic layer step is exactly the edge of Graphene；For the Graphene of N shell, N is more than 1, described atomic layer step be from N shell Graphene is transitioned into the place of N-1 layer graphene, namely the place of ledge structure.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107598155A (en) * 2017-09-08 2018-01-19 中国科学院合肥物质科学研究院 Lead nano particle and preparation method thereof

Citations (7)

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Publication number Priority date Publication date Assignee Title
JP2005238388A (en) * 2004-02-26 2005-09-08 Nagoya Institute Of Technology Carbon nano structure, its manufacturing method, its cutting method, probe having this structure and electric field electron emitting source
CN102492926A (en) * 2011-12-16 2012-06-13 东南大学 Preparation method for grapheme thin film with local monoatomic layer
CN102912174A (en) * 2012-11-08 2013-02-06 浙江南都电源动力股份有限公司 Lead and graphene composite material
CN104401964A (en) * 2014-11-11 2015-03-11 东南大学 Preparation method of fullerene nano structure
CN104445139A (en) * 2014-11-04 2015-03-25 东南大学 Method for preparing single-wall carbon nanotube
CN104692367A (en) * 2015-01-30 2015-06-10 东南大学 Preparation method of metallic graphene
CN105063556A (en) * 2015-07-17 2015-11-18 中国科学院合肥物质科学研究院 Method for preparing nano metal particle array on graphene

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005238388A (en) * 2004-02-26 2005-09-08 Nagoya Institute Of Technology Carbon nano structure, its manufacturing method, its cutting method, probe having this structure and electric field electron emitting source
CN102492926A (en) * 2011-12-16 2012-06-13 东南大学 Preparation method for grapheme thin film with local monoatomic layer
CN102912174A (en) * 2012-11-08 2013-02-06 浙江南都电源动力股份有限公司 Lead and graphene composite material
CN104445139A (en) * 2014-11-04 2015-03-25 东南大学 Method for preparing single-wall carbon nanotube
CN104401964A (en) * 2014-11-11 2015-03-11 东南大学 Preparation method of fullerene nano structure
CN104692367A (en) * 2015-01-30 2015-06-10 东南大学 Preparation method of metallic graphene
CN105063556A (en) * 2015-07-17 2015-11-18 中国科学院合肥物质科学研究院 Method for preparing nano metal particle array on graphene

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107598155A (en) * 2017-09-08 2018-01-19 中国科学院合肥物质科学研究院 Lead nano particle and preparation method thereof
CN107598155B (en) * 2017-09-08 2019-08-23 中国科学院合肥物质科学研究院 The preparation method of lead nano particle

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Address after: 210093 Nanjing University Science Park, 22 Hankou Road, Gulou District, Nanjing City, Jiangsu Province

Patentee after: Southeast University

Address before: 211189 No. 2 Southeast University Road, Jiangning District, Nanjing, Jiangsu

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