CN106167287A - A kind of gas separation equipment for sewage treatment area - Google Patents

A kind of gas separation equipment for sewage treatment area Download PDF

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Publication number
CN106167287A
CN106167287A CN201610594821.1A CN201610594821A CN106167287A CN 106167287 A CN106167287 A CN 106167287A CN 201610594821 A CN201610594821 A CN 201610594821A CN 106167287 A CN106167287 A CN 106167287A
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tank body
film
silicon chip
cyclone
gas
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杨林
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    • CCHEMISTRY; METALLURGY
    • C02TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02FTREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00Treatment of water, waste water, or sewage
    • C02F1/38Treatment of water, waste water, or sewage by centrifugal separation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D46/00Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
    • B01D46/24Particle separators, e.g. dust precipitators, using rigid hollow filter bodies
    • B01D46/2403Particle separators, e.g. dust precipitators, using rigid hollow filter bodies characterised by the physical shape or structure of the filtering element
    • B01D46/2411Filter cartridges
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence
    • G01N21/6428Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes"

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  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Geometry (AREA)
  • Organic Chemistry (AREA)
  • Water Supply & Treatment (AREA)
  • Environmental & Geological Engineering (AREA)
  • Hydrology & Water Resources (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
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  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

The invention discloses a kind of gas separation equipment for sewage treatment area, including tank body;The upper and lower two ends of tank body are symmetrically arranged with air vent and sewage draining exit, it is respectively arranged with inlet and leakage fluid dram on two sidewalls of tank body, inlet one end connects cyclone, the other end is horizontally extending to outside tank body, cyclone is arranged at described tank body upper position, and is provided with the cyclone support member for supporting cyclone below;The top of tank body is connected by flange, and flange is fastened by securing member;Upper position and the position longitudinally perpendicular with air vent holding of tank body are provided with a defecator, and defecator is provided above a detector, and this gas sensitization module is arranged at exhaust ports;Vent position is provided with electromagnetic valve;Tank body top is provided with relief valve.

Description

A kind of gas separation equipment for sewage treatment area
Technical field
The present invention relates to environmental area, be more particularly to a kind of gas separation equipment for sewage treatment area.
Background technology
In sewage disposal process, may contain toxic, flammability, explosivity, radioactivity, corrosivity etc. in sewage has Evil gas or can produce such hazardous gas is higher to the testing requirement sensitivity of such hazardous gas, stability etc..
The method of conventional detected gas is to gather gas at the scene, is stored in the sample devices of cleaning, is then sent to Laboratory, uses the composition in the detected gas such as various instrument, such as GC, GC/MS or LC/MS and the problem such as quantitatively, but, Above-mentioned detection method not only needs substantial amounts of sample collector to carry out spot sampling, consumes substantial amounts of manpower and materials, and at sample In product transportation, being frequently present of contaminated problem, the gaseous sample delivering to laboratory can not react necessary being at all Problem, maybe can not monitor its hazardness to environmental functional.
Summary of the invention
It is an object of the invention to avoid weak point of the prior art and provide a kind of for sewage treatment area Gas separation equipment.
The purpose of the present invention is achieved through the following technical solutions: a kind of gas separation equipment for sewage treatment area, It is characterized in that, including tank body;The upper and lower two ends of described tank body are symmetrically arranged with air vent and sewage draining exit, two sides of described tank body Being respectively arranged with inlet and leakage fluid dram on wall, described inlet one end connects cyclone, and the other end is horizontally extending To tank body, described cyclone is arranged at described tank body upper position, and is provided with the rotation for supporting cyclone below Stream device support member;The top of described tank body is connected by flange, and described flange is fastened by securing member;The top of described tank body Position and the position longitudinally perpendicular with air vent holding are provided with a defecator, and described defecator is provided above one Detector, this detector is arranged at exhaust ports;Described vent position is provided with electromagnetic valve;Described tank body top It is provided with relief valve.
A kind of gas separation equipment structure for sewage treatment area that the above embodiment of the present invention provides arranges conjunction Reason, thus solve above-mentioned technical problem.
Accompanying drawing explanation
Accompanying drawing herein is merged in description and constitutes the part of this specification, it is shown that meet the enforcement of the present invention Example, and for explaining the principle of the present invention together with description.
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the structural representation of the detector used according to the present invention shown in an exemplary embodiment.
The structural representation of the sensitive blocks that Fig. 3 uses according to the present invention shown in an exemplary embodiment.
Fig. 4 is the preparation technology FB(flow block) of the sensitive blocks used according to the present invention shown in an exemplary embodiment.
Wherein: 1-silicon chip, 2-silicon nitride layer, 3-Cr film layer, 4-PANI film, 5-Ni film, 6-HKUST-1 film, 7-BSP film, 8-tank body, 9-baffle plate, 10-sensitive blocks, 11-electromagnetic valve, 12-air vent, 13-detector, 14-relief valve, 15-fastens Part, 16-cyclone, 17-cyclone support member, 18-leakage fluid dram, 19-sewage draining exit, 20-data read module, 21-inlet, 22-defecator.
Detailed description of the invention
Here will illustrate exemplary embodiment in detail, its example represents in the accompanying drawings.Explained below relates to During accompanying drawing, unless otherwise indicated, the same numbers in different accompanying drawings represents same or analogous key element.Following exemplary embodiment Described in embodiment do not represent all embodiments consistent with the present invention.On the contrary, they are only with the most appended The example of the apparatus and method that some aspects that described in detail in claims, the present invention are consistent.
In the description of the present application, it should be noted that unless otherwise prescribed and limit, term " is installed ", " being connected ", " connect " and should be interpreted broadly, for example, it may be mechanically connected or electrical connection, it is also possible to be the connection of two element internals, can Being to be joined directly together, it is also possible to be indirectly connected to by intermediary, for the ordinary skill in the art, can basis Concrete condition understands the concrete meaning of above-mentioned term.
Along with economic fast development and industrial expansion, not only can produce various in industry manufactures production process The waste gas of various kinds, the most also can produce various gas at the various apparatuses made, and the generation of these gases not only can Affect the use of instrument itself, and the potential threat of environmental pollution can be become.
Therefore, it is necessary to look for a kind of equipment that can monitor the gas that various apparatus in use produces, again may be used Gas sensor with timely feedback monitoring to gas data.
The method of conventional detected gas is to gather gas at the scene, is stored in the sample devices of cleaning, is then sent to Laboratory, uses the composition in the detected gas such as various instrument, such as GC, GC/MS or LC/MS and the problem such as quantitatively, but, Above-mentioned detection method not only needs substantial amounts of sample collector to carry out spot sampling, consumes substantial amounts of manpower and materials, and at sample In product transportation, it is frequently present of contaminated problem, delivers to the gaseous sample of laboratory and can not exist by reactor tool at all Problem, maybe can not monitor its hazardness to environmental functional.
In existing report, there is employing inorganic material film and made gas detection sensor and carry out detected gas, but That above-mentioned gas sensor there is problems in that the membrane material of employing is short for service life, and in the environment humidity bigger time Wait, the most malfunctioning, it is impossible to well to play its effect.Therefore, need badly and find the one can be sensitive to hydrone, again on a large scale Can monitor and separate the material of measured target gas station in time.
Metal-organic framework materials (MOFs) is the bonding mode and by coordinate bond by metal ion or metal cluster A little organic ligands combine formation, due to metal ion or the difference of organic ligand, can show various topological structures. MOFs self has that pore size is adjustable, specific surface area advantages of higher, and it is at gas-liquid separation, catalysis, optical, electrical, gas sensing etc. Aspect has potential using value.Wherein HKUST-1 is a kind of typical metal-organic framework materials, and it is the quickest to hydrogen Sense, when it contacts with hydrogen, the skeleton flexibility of HKUST-1 can become owing to sucking different guest molecules in duct Changing, this change can cause again the change of its unit cell, and the change of unit cell eventually results in the change of HKUST-1 membrane resistance, logical Cross and measure the concentration change reacting hydrogen to be measured that resistance can be sensitive.
The present invention, based on resistor-type HKUST-1 membrane material, designs hydrogen gas sensor, uses Cr film as the fork of sensitive blocks Referring to electrode layer, Ni film is as the catalyst of HKUST-1 film forming.
The invention will be further described with the following Examples.
Application scenarios 1
Fig. 1 is the structure according to a kind of gas separation equipment for sewage treatment area shown in an exemplary embodiment Schematic diagram, as it is shown in figure 1, described equipment includes tank body 8;Described tank body about 8 two ends are symmetrically arranged with air vent 12 and blowdown Mouth 19, two sidewalls of described tank body 8 are respectively arranged with inlet 21 and leakage fluid dram 18, and described inlet 21 one end connects to be had Cyclone 16, the other end is horizontally extending to tank body 8, and described cyclone 16 is arranged at described tank body 8 upper position, And it is provided with the cyclone support member 17 for supporting cyclone 16 below;The top of described tank body 8 is connected by flange, Described flange is fastened by securing member 15;The upper position of described tank body 8 and keep longitudinally perpendicular position to set with air vent 12 Being equipped with a defecator 22, described defecator 22 is provided above a detector 13, and this detector 13 sets It is placed at air vent 12;Described air vent 12 position is provided with electromagnetic valve 11;Described tank body 8 top is provided with relief valve 14.
A kind of gas separation equipment structure for sewage treatment area that the above embodiment of the present invention provides arranges conjunction Reason, thus solve above-mentioned technical problem.
Preferably, described leakage fluid dram 18 is arranged at below described inlet 21.
Preferably, described leakage fluid dram 18 is positioned at below described cyclone support member 17.
Preferably, described securing member 15 is bolt.
Fig. 2 is the structural representation of the detector 13 used according to the present invention shown in an exemplary embodiment.As Shown in Fig. 2, described detector 13 includes sensitive blocks 10 and data read module 20, during described sensitive blocks 10 is placed on In the hollow structure shell with air-vent.
The structural representation of the sensitive blocks that Fig. 3 uses according to the present invention shown in an exemplary embodiment, such as Fig. 3 institute Showing, this sensitive blocks 10 includes silicon chip substrate, PANI film 4, Ni film 5, HKUST-1 film 6 and BSP film 7;Described silicon chip substrate includes Silicon chip 1, silicon nitride film 2 and Cr film layer 3, silicon nitride film 2 is used as insulating barrier, and Cr film layer 3 is used as interdigital electrode layer;Described Ni film 5 Prepared by employing magnetron sputtering method, thickness is 10nm;The thickness of described HKUST-1 film 6 is about 2~60 μm;Described Cr film layer 3 and number It is conductively connected according to read module 20.
Fig. 4 is the preparation technology FB(flow block) of the sensitive blocks used according to the present invention shown in an exemplary embodiment, As shown in Figure 4, the making of described sensitive blocks 10 comprises the steps:
Step one, preparation silicon chip substrate:
Take N-type silicon chip, cutting a size of 5cm × 1cm, sequentially pass through acetone, ethanol, deionized water ultrasonic cleaning, ultrasonic Time is 30min, then dries up by nitrogen gun;Cleaned silicon chip is put into PECVD device, deposits one layer of silicon nitride film, Thickness about 200nm;By Wafer Cleaning, spin coating one layer photoetching glue, photoresist parameter is low speed 900rpm spin coating 13s, at a high speed 4500rpm spin coating 50s;Being then covered by interdigital electrode mask, expose 7s, develop 65s;Putting in magnetic control sputtering device, magnetic control spatters Penetrating Cr film, as interdigital electrode layer, thickness is 500nm, washes silicon chip surface photoresist subsequently;
Step 2, prepares microcavity:
The silicon chip substrate that will process through step one, first with 75% ethanol solution, its surface wipes is clean, use flame to add Full-boiled process, is placed in silicon chip substrate on flame, from the beginning of one end, draws once at interval of 1cm, to form the microcavity of 2 tapers;Micro- Cavity configuration enhances the sensitivity of sensitive blocks, and then the power of test of this detection equipment is strengthened so that it is the suction to hydrogen Attached very competent;
Step 3, preparation PANI film:
Take a certain amount of polyaniline and be dissolved in dimethylformamide formation saturated solution, use spin coating-czochralski method to satisfy With the surface that solution is spun to the silicon chip substrate processed through step 2, the speed of spin coating is 3000rpm, and then spin coating 10s exists The baking oven of 100 DEG C is dried overnight, obtains PANI film on silicon chip substrate surface;
The type gas sense module used is due to based on resistive type metal-organic framework materials, and metal-organic framework materials Film forming, on polyaniline film, owing to polyaniline has strong electric conductivity, therefore, further enhancing the spirit of type gas sense module Sensitivity, and then make this detection equipment that the sensitivity of gas significantly to be strengthened;
Step 4, preparation HKUST-1 film:
1) putting in magnetron sputtering by silicon chip substrate, base vacuum is less than 1.5 × 10-3The Ni film of Pa, magnetron sputtering 10nm 5, silicon chip extracting is stand-by;
2) H is weighed3BTC 0.336g in another small beaker, with 19.2mL ethanol be completely dissolved water white transparency is molten Liquid, weighs Cu (NO3)2·3H2O 0.7g, in small beaker, uses 19.2mL deionized water dissolving, by H3BTC solution is along walls of beaker Pour Cu (NO into3)2·3H2O solution stirs half an hour, obtains HKUST-1 mother solution azury;The HKUST-1 mother that will prepare Liquid and silicon chip substrate are placed in the reactor of 50mL, utilize hydrothermal synthesis method to synthesize MOF film, and reaction temperature is 135 DEG C, reacts 2 After it, repeatedly rinse several times with methanol after silicon chip substrate being taken out with tweezers, dry 1 hour in 100 DEG C, in silicon chip substrate To blue HKUST-1 film, the thickness of HKUST-1 film is about 2~60 μm;
Owing to using Ni layer as the catalyst of metal-organic framework materials film forming, the Ni film meeting on PANI surface and HKUST- 1 film reaction, therefore, on the one hand promotes the film forming of HKUST-1, on the other hand improves the combination of PANI film and HKUST-1 film Performance, makes to combine film layer and has higher stability, so that the sensing performance of the type gas sense module being thus prepared from More stable;
Step 5, preparation BSP film:
1) BSP sub-micrometer rod growth: In (NO3)3·x H2O (0.08g) and H3BTC (0.068g) joins mixed solvent H2In O/DMF (1:1,10mL), stir 10min under room temperature and make solution A, by photochromic compounds BSP (0.057mmol) joining in solution A, dark place is stirred 1 hour;
2) film forming: by film forming on BSP solution rotation silicon chip/PANI/HKUST-1 film, the speed of rotation is 5000rpm, rotation Time is 5 seconds;
Owing to, in the preparation process of the gas sensitization module used at it, adding on its surface and there is fluorescence property BSP photochromic molecule, this photochromic molecule, under electromagnetism excitation, can send fluorescence in there is inflammable and explosive hazardous environment, make this Detection equipment is capable of qualitative and quantitative detection environment and includes that hydrogen, at interior flammable explosive gas, can make to cause danger The probability of situation reduces;
Step 5, sensitive blocks assembles:
Silicon chip substrate being put in hollow structure shell, wafer sections down, place towards small ventilating holes by sensitive thin film part, Metal wire connects interdigital electrode and data read module on silicon chip.Owing to the manufacturing process of this sensitive blocks is the most simple and convenient and Fast, substantial amounts of man power and material can be saved, there are the potentiality of large-scale industrial production.
Experiment test:
(1) experiments Hydrogen: 25 ± 2 DEG C of conditions, each leads into the nitrogen of air, hydrogen and hydrogen, and flow velocity is 1000ml/ Min, load resistance is 200 Ω;During blowing air, gas sensor signal value is O;It is passed through 1ppm hydrogen, gas sensor signal Value changes to rapidly 1.0mV in 10s, and signal value tends towards stability in 20s;Being passed through air after 1min, signal value is in 5s Return to 0 value and tend towards stability in 30s;Through 2000 stability tests, its data variation rate is less than 10%;Test result shows Show that this solid waste analyte detection equipment has good response performance to hydrogen.
(2) ammonia experiment: 25 ± 2 DEG C of conditions, each leads into air ammonia and the nitrogen containing ammonia, and flow velocity is 1000ml/ Min, load resistance is 200 Ω;During blowing air, gas sensor signal value is O;Being passed through 100ppm ammonia, gas sensor is believed Number value changes to rapidly 5.0mV in 10s, and signal value tends towards stability in 1min;Be passed through air after 5min, signal value in Return to 0 value in 10s and tend towards stability in 0.5min;Through 2000 stability tests, its data variation rate is less than 10%;Survey Test result shows that this solid waste analyte detection equipment has good response performance to ammonia.
(3) hydrogen sulfide experiment: 25 ± 2 DEG C of conditions, each leads into air and hydrogen sulfide containing nitrogen, and flow velocity is 1000ml/ Min, load resistance is 200 Ω;During blowing air, gas sensor signal value is O;Being passed through 0.05ppm hydrogen sulfide gas, gas passes Sensor signal value changes to rapidly 3.0mV in 10s, and signal value tends towards stability in 30s;Air, signal it is passed through after 5min It is worth and in 5s, returns to 0 value and tend towards stability in 10s;Through 2000 stability tests, its data variation rate is less than 10%;Survey Test result shows that this solid waste analyte detection equipment has good response performance to hydrogen sulfide gas.
Test result indicate that: also this to ammonia and hydrogen sulfide poisonous and hazardous gas of this sensitive blocks has the strongest quick Sense and selection performance, make this detection equipment all be improved sensitivity and the selectivity of toxic and harmful, reduce production Risk.
Application scenarios 2:
Fig. 1 is the structure according to a kind of gas separation equipment for sewage treatment area shown in an exemplary embodiment Schematic diagram, as it is shown in figure 1, described equipment includes tank body 8;Described tank body about 8 two ends are symmetrically arranged with air vent 12 and blowdown Mouth 19, two sidewalls of described tank body 8 are respectively arranged with inlet 21 and leakage fluid dram 18, and described inlet 21 one end connects to be had Cyclone 16, the other end is horizontally extending to tank body 8, and described cyclone 16 is arranged at described tank body 8 upper position, And it is provided with the cyclone support member 17 for supporting cyclone 16 below;The top of described tank body 8 is connected by flange, Described flange is fastened by securing member 15;The upper position of described tank body 8 and keep longitudinally perpendicular position to set with air vent 12 Being equipped with a defecator 22, described defecator 22 is provided above a detector 13, and this detector 13 sets It is placed at air vent 12;Described air vent 12 position is provided with electromagnetic valve 11;Described tank body 8 top is provided with relief valve 14.
A kind of gas separation equipment structure for sewage treatment area that the above embodiment of the present invention provides arranges conjunction Reason, thus solve above-mentioned technical problem.
Preferably, described leakage fluid dram 18 is arranged at below described inlet 21.
Preferably, described leakage fluid dram 18 is positioned at below described cyclone support member 17.
Preferably, described securing member 15 is bolt.
Fig. 2 is the structural representation of the detector 13 used according to the present invention shown in an exemplary embodiment.As Shown in Fig. 2, described detector 13 includes sensitive blocks 10 and data read module 20, during described sensitive blocks 10 is placed on In the hollow structure shell with air-vent.
The structural representation of the sensitive blocks that Fig. 3 uses according to the present invention shown in an exemplary embodiment, such as Fig. 3 institute Showing, this sensitive blocks 10 includes silicon chip substrate, PANI film 4, Ni film 5, HKUST-1 film 6 and BSP film 7;Described silicon chip substrate includes Silicon chip 1, silicon nitride film 2 and Cr film layer 3, silicon nitride film 2 is used as insulating barrier, and Cr film layer 3 is used as interdigital electrode layer;Described Ni film 5 Prepared by employing magnetron sputtering method, thickness is 10nm;The thickness of described HKUST-1 film 6 is about 2~60 μm;Described Cr film layer 3 and number It is conductively connected according to read module 20.
Fig. 4 is the preparation technology FB(flow block) of the sensitive blocks used according to the present invention shown in an exemplary embodiment, As shown in Figure 4, the making of described sensitive blocks 10 comprises the steps:
Step one, preparation silicon chip substrate:
Take N-type silicon chip, cutting a size of 5cm × 1cm, sequentially pass through acetone, ethanol, deionized water ultrasonic cleaning, ultrasonic Time is 30min, then dries up by nitrogen gun;Cleaned silicon chip is put into PECVD device, deposits one layer of silicon nitride film, Thickness about 210nm;By Wafer Cleaning, spin coating one layer photoetching glue, photoresist parameter is low speed 900rpm spin coating 13s, at a high speed 4500rpm spin coating 50s;Being then covered by interdigital electrode mask, expose 7s, develop 65s;Putting in magnetic control sputtering device, magnetic control spatters Penetrating Cr film, as interdigital electrode layer, thickness is 510nm, washes silicon chip surface photoresist subsequently;
Step 2, prepares microcavity:
The silicon chip substrate that will process through step one, first with 75% ethanol solution, its surface wipes is clean, use flame to add Full-boiled process, is placed in silicon chip substrate on flame, from the beginning of one end, draws once at interval of 1cm, to form the microcavity of 2 tapers;Micro- Cavity configuration enhances the sensitivity of sensitive blocks, and then the power of test of this detection equipment is strengthened so that it is the suction to hydrogen Attached very competent;
Step 3, preparation PANI film:
Take a certain amount of polyaniline and be dissolved in dimethylformamide formation saturated solution, use spin coating-czochralski method to satisfy With the surface that solution is spun to the silicon chip substrate processed through step 2, the speed of spin coating is 3000rpm, and then spin coating 10s exists The baking oven of 100 DEG C is dried overnight, obtains PANI film on silicon chip substrate surface;
Step 4, preparation HKUST-1 film:
1) putting in magnetron sputtering by silicon chip substrate, base vacuum is less than 1.5 × 10-3The Ni film 5 of Pa, magnetron sputtering 8nm, Silicon chip extracting is stand-by;
2) H is weighed3BTC 0.336g in another small beaker, with 19.2mL ethanol be completely dissolved water white transparency is molten Liquid, weighs Cu (NO3)2·3H2O 0.7g, in small beaker, uses 19.2mL deionized water dissolving, by H3BTC solution is along walls of beaker Pour Cu (NO into3)2·3H2O solution stirs half an hour, obtains HKUST-1 mother solution azury;The HKUST-1 mother that will prepare Liquid and silicon chip substrate are placed in the reactor of 50mL, utilize hydrothermal synthesis method to synthesize MOF film, and reaction temperature is 135 DEG C, reacts 2 After it, repeatedly rinse several times with methanol after silicon chip substrate being taken out with tweezers, dry 1 hour in 100 DEG C, in silicon chip substrate To blue HKUST-1 film, the thickness of HKUST-1 film is about 2~60 μm;Owing to using Ni layer as metal-organic framework materials The catalyst of film forming, the Ni film on PANI surface can be with HKUST-1 film reaction, and therefore, on the one hand the rate of film build of HKUST-1 improves 10%, on the other hand PANI film improves 5% with the binding ability of HKUST-1 film, makes to combine film layer and has higher stability, So that the sensing performance of the type gas sense module being thus prepared from is more stable;
Step 5, preparation BSP film:
1) BSP sub-micrometer rod growth: In (NO3)3·x H2O (0.08g) and H3BTC (0.068g) joins mixed solvent H2In O/DMF (1:1,10mL), stir 10min under room temperature and make solution A, by photochromic compounds BSP (0.057mmol) joining in solution A, dark place is stirred 1 hour;
2) film forming: by film forming on BSP solution rotation silicon chip/PANI/HKUST-1 film, the speed of rotation is 5000rpm, rotation Time is 5 seconds;
Owing to, in the preparation process of the gas sensitization module used at it, adding on its surface and there is fluorescence property BSP photochromic molecule, this photochromic molecule, under electromagnetism excitation, can send fluorescence in there is inflammable and explosive hazardous environment, make this Detection equipment is capable of qualitative and quantitative detection environment and includes that hydrogen, at interior flammable explosive gas, can make to cause danger The probability of situation reduces 10%;
Step 5, sensitive blocks assembles:
Silicon chip substrate being put in hollow structure shell, wafer sections down, place towards small ventilating holes by sensitive thin film part, Metal wire connects interdigital electrode and data read module on silicon chip.Owing to the manufacturing process of this sensitive blocks is the most simple and convenient and Fast, substantial amounts of man power and material can be saved, there are the potentiality of large-scale industrial production.
Experiment test:
(1) hydrogen test: 25 ± 2 DEG C of conditions, each leads into the nitrogen of air and hydrogen, and flow velocity is 1000ml/min, Load resistance is 200 Ω;During blowing air, gas sensor signal value is O;Being passed through 10ppm hydrogen, gas sensor signal value exists Change to rapidly 3.0mV in 8s, and signal value tends towards stability in 30s;Being passed through air after 1min, signal value returns to 0 in 10s Value also tends towards stability in 1min;Through 2000 stability tests, its data variation rate is less than 10%.Test result shows this Solid waste analyte detection equipment has good response performance to hydrogen.
(2) ammonia test: 25 ± 2 DEG C of conditions, each leads into air ammonia and the nitrogen containing ammonia, and flow velocity is 1000ml/ Min, load resistance is 200 Ω;During blowing air, gas sensor signal value is O;Being passed through 200ppm ammonia, gas sensor is believed Number value changes to rapidly 10.0mV in 5s, and signal value tends towards stability in 1min;Be passed through air after 5min, signal value in Return to 0 value in 10s and tend towards stability in 0.5min;Through 2000 stability tests, its data variation rate is less than 10%.Survey Test result shows that this solid waste analyte detection equipment has good response performance to ammonia.
(3) hydrogen sulfide test: 25 ± 2 DEG C of conditions, each leads into air and hydrogen sulfide containing nitrogen, and flow velocity is 1000ml/ Min, load resistance is 200 Ω;During blowing air, gas sensor signal value is O;Being passed through 0.1ppm ammonia, gas sensor is believed Number value changes to rapidly 5.0mV in 7s, and signal value tends towards stability in 30s;Being passed through air after 5min, signal value is in 5s Return to 0 value and tend towards stability in 0.5min;Through 2000 stability tests, its data variation rate is less than 10%.Test knot Fruit shows that this solid waste analyte detection equipment has good response performance to hydrogen sulfide gas.
Test result indicate that: the sensitive property of also this to ammonia and hydrogen sulfide poisonous and hazardous gas of this sensitive blocks increases Strong 5% and select performance to improve 8%, make this detection equipment that sensitivity and the selectivity of toxic and harmful all to be carried Height, reduces the risk of production.
Application scenarios 3:
Fig. 1 is the structure according to a kind of gas separation equipment for sewage treatment area shown in an exemplary embodiment Schematic diagram, as it is shown in figure 1, described equipment includes tank body 8;Described tank body about 8 two ends are symmetrically arranged with air vent 12 and blowdown Mouth 19, two sidewalls of described tank body 8 are respectively arranged with inlet 21 and leakage fluid dram 18, and described inlet 21 one end connects to be had Cyclone 16, the other end is horizontally extending to tank body 8, and described cyclone 16 is arranged at described tank body 8 upper position, And it is provided with the cyclone support member 17 for supporting cyclone 16 below;The top of described tank body 8 is connected by flange, Described flange is fastened by securing member 15;The upper position of described tank body 8 and keep longitudinally perpendicular position to set with air vent 12 Being equipped with a defecator 22, described defecator 22 is provided above a detector 13, and this detector 13 sets It is placed at air vent 12;Described air vent 12 position is provided with electromagnetic valve 11;Described tank body 8 top is provided with relief valve 14.
A kind of gas separation equipment structure for sewage treatment area that the above embodiment of the present invention provides arranges conjunction Reason, thus solve above-mentioned technical problem.
Preferably, described leakage fluid dram 18 is arranged at below described inlet 21.
Preferably, described leakage fluid dram 18 is positioned at below described cyclone support member 17.
Preferably, described securing member 15 is bolt.
Fig. 2 is the structural representation of the detector 13 used according to the present invention shown in an exemplary embodiment.As Shown in Fig. 2, described detector 13 includes sensitive blocks 10 and data read module 20, during described sensitive blocks 10 is placed on In the hollow structure shell with air-vent.
Fig. 3 is the structural representation of the sensitive blocks used according to the present invention shown in an exemplary embodiment, such as Fig. 3 institute Showing, this sensitive blocks 10 includes silicon chip substrate, PANI film 4, Ni film 5, HKUST-1 film 6 and BSP film 7;Described silicon chip substrate includes Silicon chip 1, silicon nitride film 2 and Cr film layer 3, silicon nitride film 2 is used as insulating barrier, and Cr film layer 3 is used as interdigital electrode layer;Described Ni film 5 Prepared by employing magnetron sputtering method, thickness is 12nm;The thickness of described HKUST-1 film 6 is about 20 μm;Described Cr film layer 3 and data Read module 20 is conductively connected.
Fig. 4 is the preparation technology FB(flow block) of the sensitive blocks used according to the present invention shown in an exemplary embodiment, As shown in Figure 4, the making of described sensitive blocks 10 comprises the steps:
Step one, preparation silicon chip substrate:
Take N-type silicon chip, cutting a size of 5cm × 1cm, sequentially pass through acetone, ethanol, deionized water ultrasonic cleaning, ultrasonic Time is 30min, then dries up by nitrogen gun;Cleaned silicon chip is put into PECVD device, deposits one layer of silicon nitride film, Thickness about 220nm;By Wafer Cleaning, spin coating one layer photoetching glue, photoresist parameter is low speed 900rpm spin coating 13s, at a high speed 4500rpm spin coating 50s;Being then covered by interdigital electrode mask, expose 7s, develop 65s;Putting in magnetic control sputtering device, magnetic control spatters Penetrating Cr film, as interdigital electrode layer, thickness is 550nm, washes silicon chip surface photoresist subsequently;
Step 2, prepares microcavity:
The silicon chip substrate that will process through step one, first with 75% ethanol solution, its surface wipes is clean, use flame to add Full-boiled process, is placed in silicon chip substrate on flame, from the beginning of one end, draws once at interval of 1cm, to form the microcavity of 2 tapers;Micro- Cavity configuration enhances the sensitivity of sensitive blocks, and then the power of test of this detection equipment is strengthened so that it is the suction to hydrogen Attached very competent;
Step 3, preparation PANI film:
Take a certain amount of polyaniline and be dissolved in dimethylformamide formation saturated solution, use spin coating-czochralski method to satisfy With the surface that solution is spun to the silicon chip substrate processed through step 2, the speed of spin coating is 3000rpm, and then spin coating 10s exists The baking oven of 100 DEG C is dried overnight, obtains PANI film on silicon chip substrate surface;
Step 4, preparation HKUST-1 film:
1) putting in magnetron sputtering by silicon chip substrate, base vacuum is less than 1.5 × 10-3The Ni film of Pa, magnetron sputtering 12nm 5, silicon chip extracting is stand-by;
2) H is weighed3BTC 0.336g in another small beaker, with 19.2mL ethanol be completely dissolved water white transparency is molten Liquid, weighs Cu (NO3)2·3H2O 0.7g, in small beaker, uses 19.2mL deionized water dissolving, by H3BTC solution is along walls of beaker Pour Cu (NO into3)2·3H2O solution stirs half an hour, obtains HKUST-1 mother solution azury;The HKUST-1 mother that will prepare Liquid and silicon chip substrate are placed in the reactor of 50mL, utilize hydrothermal synthesis method to synthesize MOF film, and reaction temperature is 135 DEG C, reacts 2 After it, repeatedly rinse several times with methanol after silicon chip substrate being taken out with tweezers, dry 1 hour in 100 DEG C, in silicon chip substrate To blue HKUST-1 film, the thickness of HKUST-1 film is about 2~60 μm;Owing to using Ni layer as metal-organic framework materials The catalyst of film forming, the Ni film on PANI surface can be with HKUST-1 film reaction, and therefore, on the one hand the rate of film build of HKUST-1 improves 20%, on the other hand PANI film improves 10% with the binding ability of HKUST-1 film, makes to combine film layer and has higher stablizing Property, so that the sensing performance of the type gas sense module being thus prepared from is more stable;
Step 5, preparation BSP film:
1) BSP sub-micrometer rod growth: In (NO3)3·x H2O (0.08g) and H3BTC (0.068g) joins mixed solvent H2In O/DMF (1:1,10mL), stir 10min under room temperature and make solution A, by photochromic compounds BSP (0.057mmol) joining in solution A, dark place is stirred 1 hour;
2) film forming: by film forming on BSP solution rotation silicon chip/PANI/HKUST-1 film, the speed of rotation is 5000rpm, rotation Time is 5 seconds;Owing to, in the preparation process of the gas sensitization module used at it, adding on its surface and there is fluorescence property BSP photochromic molecule, this photochromic molecule, under electromagnetism excitation, can send fluorescence in there is inflammable and explosive hazardous environment, make This detection equipment is capable of qualitative and quantitative detection environment and includes that hydrogen, at interior flammable explosive gas, can make to endanger The probability of dangerous situation condition reduces 15%;
Step 5, sensitive blocks assembles:
Silicon chip substrate being put in hollow structure shell, wafer sections down, place towards small ventilating holes by sensitive thin film part, Metal wire connects interdigital electrode and data read module on silicon chip.Owing to the manufacturing process of this sensitive blocks is the most simple and convenient and Fast, substantial amounts of man power and material can be saved, there are the potentiality of large-scale industrial production.
Experiment test:
(1) hydrogen test: 25 ± 2 DEG C of conditions, each leads into the nitrogen of air, hydrogen and hydrogen, and flow velocity is 1000ml/ Min, load resistance is 200 Ω;During blowing air, gas sensor signal value is O;It is passed through 50ppm hydrogen, gas sensor signal Value changes to rapidly 10.0mV in 5s, and signal value tends towards stability in 1min;Being passed through air after 5min, signal value is in 40s Inside return to 0 value and tend towards stability in 1min;Through 2000 stability tests, its data variation rate is less than 10%.Test knot Fruit shows that this solid waste analyte detection equipment has good response performance to hydrogen.
(2) ammonia test: 25 ± 2 DEG C of conditions, each leads into air ammonia and the nitrogen containing ammonia, and flow velocity is 1000ml/ Min, load resistance is 200 Ω;During blowing air, gas sensor signal value is O;Being passed through 500ppm ammonia, gas sensor is believed Number value changes to rapidly 15.0mV in 2s, and signal value tends towards stability in 1min;Be passed through air after 5min, signal value in Return to 0 value in 10s and tend towards stability in 1.5min;Through 2000 stability tests, its data variation rate is less than 10%.Survey Test result shows that this solid waste analyte detection equipment has good response performance to ammonia.
(3) hydrogen sulfide test: 25 ± 2 DEG C of conditions, each leads into air and hydrogen sulfide containing nitrogen, and flow velocity is 1000ml/ Min, load resistance is 200 Ω;During blowing air, gas sensor signal value is O;It is passed through 1ppm ammonia, gas sensor signal Value changes to rapidly 20.0mV in 3s, and signal value tends towards stability in 1min;Being passed through air after 5min, signal value is in 10s Inside return to 0 value and tend towards stability in 1min;Through 2000 stability tests, its data variation rate is less than 10%.Test knot Fruit shows that this solid waste analyte detection equipment has good response performance to hydrogen sulfide gas.
Test result indicate that: the sensitive property of also this to ammonia and hydrogen sulfide poisonous and hazardous gas of this sensitive blocks increases Strong 10% and select performance to improve 16%, make this detection equipment that sensitivity and the selectivity of toxic and harmful all to be obtained Improve, reduce the risk of production.
Application scenarios 4
Fig. 1 is the structure according to a kind of gas separation equipment for sewage treatment area shown in an exemplary embodiment Schematic diagram, as it is shown in figure 1, described equipment includes tank body 8;Described tank body about 8 two ends are symmetrically arranged with air vent 12 and blowdown Mouth 19, two sidewalls of described tank body 8 are respectively arranged with inlet 21 and leakage fluid dram 18, and described inlet 21 one end connects to be had Cyclone 16, the other end is horizontally extending to tank body 8, and described cyclone 16 is arranged at described tank body 8 upper position, And it is provided with the cyclone support member 17 for supporting cyclone 16 below;The top of described tank body 8 is connected by flange, Described flange is fastened by securing member 15;The upper position of described tank body 8 and keep longitudinally perpendicular position to set with air vent 12 Being equipped with a defecator 22, described defecator 22 is provided above a detector 13, and this detector 13 sets It is placed at air vent 12;Described air vent 12 position is provided with electromagnetic valve 11;Described tank body 8 top is provided with relief valve 14.
A kind of gas separation equipment structure for sewage treatment area that the above embodiment of the present invention provides arranges conjunction Reason, thus solve above-mentioned technical problem.
Preferably, described leakage fluid dram 18 is arranged at below described inlet 21.
Preferably, described leakage fluid dram 18 is positioned at below described cyclone support member 17.
Preferably, described securing member 15 is bolt.
Fig. 2 is the structural representation of the detector used according to the present invention shown in an exemplary embodiment.Such as Fig. 2 Shown in, described gas device includes that sensitive blocks 10 and data read module 20, described sensitive blocks 10 are placed on hollow structure band Have in the shell of air-vent.
Fig. 3 is the structural representation of the sensitive blocks used according to the present invention shown in an exemplary embodiment, such as Fig. 3 institute Showing, this sensitive blocks 10 includes silicon chip substrate, PANI film 4, Ni film 5, HKUST-1 film 6 and BSP film 7;Described silicon chip substrate includes Silicon chip 1, silicon nitride film 2 and Cr film layer 3, silicon nitride film 2 is used as insulating barrier, and Cr film layer 3 is used as interdigital electrode layer;Described Ni film 5 Prepared by employing magnetron sputtering method, thickness is 20nm;The thickness of described HKUST-1 film 6 is about 40 μm;Described Cr film layer 3 and data Read module 20 is conductively connected.
Fig. 4 is the preparation technology FB(flow block) of the sensitive blocks used according to the present invention shown in an exemplary embodiment, As shown in Figure 4, the making of described sensitive blocks 10 comprises the steps:
Step one, preparation silicon chip substrate:
Take N-type silicon chip, cutting a size of 5cm × 1cm, sequentially pass through acetone, ethanol, deionized water ultrasonic cleaning, ultrasonic Time is 30min, then dries up by nitrogen gun;Cleaned silicon chip is put into PECVD device, deposits one layer of silicon nitride film, Thickness about 300nm;By Wafer Cleaning, spin coating one layer photoetching glue, photoresist parameter is low speed 900rpm spin coating 13s, at a high speed 4500rpm spin coating 50s;Being then covered by interdigital electrode mask, expose 7s, develop 65s;Putting in magnetic control sputtering device, magnetic control spatters Penetrating Cr film, as interdigital electrode layer, thickness is 600nm, washes silicon chip surface photoresist subsequently;
Step 2, prepares microcavity:
The silicon chip substrate that will process through step one, first with 75% ethanol solution, its surface wipes is clean, use flame to add Full-boiled process, is placed in silicon chip substrate on flame, from the beginning of one end, draws once at interval of 1cm, to form the microcavity of 2 tapers;Micro- Cavity configuration enhances the sensitivity of sensitive blocks, and then the power of test of this detection equipment is strengthened so that it is the suction to hydrogen Attached very competent;
Step 3, preparation PANI film:
Take a certain amount of polyaniline and be dissolved in dimethylformamide formation saturated solution, use spin coating-czochralski method to satisfy With the surface that solution is spun to the silicon chip substrate processed through step 2, the speed of spin coating is 3000rpm, and then spin coating 10s exists The baking oven of 100 DEG C is dried overnight, obtains PANI film on silicon chip substrate surface;
Step 4, preparation HKUST-1 film:
1) putting in magnetron sputtering by silicon chip substrate, base vacuum is less than 1.5 × 10-3The Ni film of Pa, magnetron sputtering 10nm 5, silicon chip extracting is stand-by;
2) H is weighed3BTC 0.336g in another small beaker, with 19.2mL ethanol be completely dissolved water white transparency is molten Liquid, weighs Cu (NO3)2·3H2O 0.7g, in small beaker, uses 19.2mL deionized water dissolving, by H3BTC solution is along walls of beaker Pour Cu (NO into3)2·3H2O solution stirs half an hour, obtains HKUST-1 mother solution azury;The HKUST-1 mother that will prepare Liquid and silicon chip substrate are placed in the reactor of 50mL, utilize hydrothermal synthesis method to synthesize MOF film, and reaction temperature is 135 DEG C, reacts 2 After it, repeatedly rinse several times with methanol after silicon chip substrate being taken out with tweezers, dry 1 hour in 100 DEG C, in silicon chip substrate To blue HKUST-1 film, the thickness of HKUST-1 film is about 2~60 μm;Owing to using Ni layer as metal-organic framework materials The catalyst of film forming, the Ni film on PANI surface can be with HKUST-1 film reaction, and therefore, on the one hand the rate of film build of HKUST-1 improves 30%, on the other hand PANI film improves 20% with the binding ability of HKUST-1 film, makes to combine film layer and has higher stablizing Property, so that the sensing performance of the type gas sense module being thus prepared from is more stable;
Step 5, preparation BSP film:
1) BSP sub-micrometer rod growth: In (NO3)3·x H2O (0.08g) and H3BTC (0.068g) joins mixed solvent H2In O/DMF (1:1,10mL), stir 10min under room temperature and make solution A, by photochromic compounds BSP (0.057mmol) joining in solution A, dark place is stirred 1 hour;
2) film forming: by film forming on BSP solution rotation silicon chip/PANI/HKUST-1 film, the speed of rotation is 5000rpm, rotation Time is 5 seconds;Owing to, in the preparation process of the gas sensitization module used at it, adding on its surface and there is fluorescence property BSP photochromic molecule, this photochromic molecule, under electromagnetism excitation, can send fluorescence in there is inflammable and explosive hazardous environment, make This detection equipment is capable of qualitative and quantitative detection environment and includes that hydrogen, at interior flammable explosive gas, can make to endanger The probability of dangerous situation condition reduces 35%;
Step 5, sensitive blocks assembles:
Silicon chip substrate being put in hollow structure shell, wafer sections down, place towards small ventilating holes by sensitive thin film part, Metal wire connects interdigital electrode and data read module on silicon chip.Owing to the manufacturing process of this sensitive blocks is the most simple and convenient and Fast, substantial amounts of man power and material can be saved, there are the potentiality of large-scale industrial production.
Experiment test:
(1) hydrogen test: 25 ± 2 DEG C of conditions, each leads into the nitrogen of air, hydrogen and hydrogen, and flow velocity is 1000ml/ Min, load resistance is 200 Ω;During blowing air, gas sensor signal value is O;Being passed through 1 00ppm hydrogen, gas sensor is believed Number value changes to rapidly 30.0mV in 3s, and signal value tends towards stability in 20s;Being passed through air after 5min, signal value is in 20s Inside return to 0 value and tend towards stability in 2min;Through 2000 stability tests, its data variation rate is less than 10%.Test knot Fruit shows that this solid waste analyte detection equipment has good response performance to hydrogen.
(2) ammonia test: 25 ± 2 DEG C of conditions, each leads into air ammonia and the nitrogen containing ammonia, and flow velocity is 1000ml/ Min, load resistance is 200 Ω;During blowing air, gas sensor signal value is O;It is passed through 1000ppm ammonia, sensor signal value In 2s, change to rapidly 10.0mV, and signal value tends towards stability in 2min;Being passed through air after 5min, signal value is in 10s Return to 0 value and tend towards stability in 2min;Through 2000 stability tests, its data variation rate is less than 10%.Test result Show that this solid waste analyte detection equipment has good response performance to ammonia.
(3) hydrogen sulfide test: 25 ± 2 DEG C of conditions, each leads into air and hydrogen sulfide containing nitrogen, and flow velocity is 1000ml/ Min, load resistance is 200 Ω;During blowing air, gas sensor signal value is O;Being passed through 10ppm ammonia, sensor signal value exists Change to rapidly 25.0mV in 2s, and signal value tends towards stability in 2min;Being passed through air after 5min, signal value returns in 40s To 0 value and tend towards stability in 2min;Through 2000 stability tests, its data variation rate is less than 10%.Test result shows Show that this solid waste analyte detection equipment has good response performance to hydrogen sulfide gas.
Test result indicate that: the sensitive property of also this to ammonia and hydrogen sulfide poisonous and hazardous gas of this sensitive blocks increases Strong 20% and select performance to improve 30%, make this detection equipment that sensitivity and the selectivity of toxic and harmful all to be obtained Improve, reduce the risk of production.
Application scenarios 5
Fig. 1 is the structure according to a kind of gas separation equipment for sewage treatment area shown in an exemplary embodiment Schematic diagram, as it is shown in figure 1, described equipment includes tank body 8;Described tank body about 8 two ends are symmetrically arranged with air vent 12 and blowdown Mouth 19, two sidewalls of described tank body 8 are respectively arranged with inlet 21 and leakage fluid dram 18, and described inlet 21 one end connects to be had Cyclone 16, the other end is horizontally extending to tank body 8, and described cyclone 16 is arranged at described tank body 8 upper position, And it is provided with the cyclone support member 17 for supporting cyclone 16 below;The top of described tank body 8 is connected by flange, Described flange is fastened by securing member 15;The upper position of described tank body 8 and keep longitudinally perpendicular position to set with air vent 12 Being equipped with a defecator 22, described defecator 22 is provided above a detector 13, and this detector 13 sets It is placed at air vent 12;Described air vent 12 position is provided with electromagnetic valve 11;Described tank body 8 top is provided with relief valve 14.
A kind of gas separation equipment structure for sewage treatment area that the above embodiment of the present invention provides arranges conjunction Reason, thus solve above-mentioned technical problem.
Preferably, described leakage fluid dram 18 is arranged at below described inlet 21.
Preferably, described leakage fluid dram 18 is positioned at below described cyclone support member 17.
Preferably, described securing member 15 is bolt.
Fig. 2 is the structural representation of the detector 13 used according to the present invention shown in an exemplary embodiment.As Shown in Fig. 2, described detector 13 includes sensitive blocks 10 and data read module 20, during described sensitive blocks 10 is placed on In the hollow structure shell with air-vent.
Fig. 3 is the structural representation of the sensitive blocks used according to the present invention shown in an exemplary embodiment, such as Fig. 3 institute Showing, this sensitive blocks 10 includes silicon chip substrate, PANI film 4, Ni film 5, HKUST-1 film 6 and BSP film 7;Described silicon chip substrate includes Silicon chip 1, silicon nitride film 2 and Cr film layer 3, silicon nitride film 2 is used as insulating barrier, and Cr film layer 3 is used as interdigital electrode layer;Described Ni film 5 Prepared by employing magnetron sputtering method, thickness is 30nm;The thickness of described HKUST-1 film 6 is about 60 μm;Described Cr film layer 3 and data Read module 20 is conductively connected.
Fig. 4 is the preparation technology FB(flow block) of the sensitive blocks used according to the present invention shown in an exemplary embodiment, As shown in Figure 4, the making of described sensitive blocks 10 comprises the steps:
Step one, preparation silicon chip substrate:
Take N-type silicon chip, cutting a size of 5cm × 1cm, sequentially pass through acetone, ethanol, deionized water ultrasonic cleaning, ultrasonic Time is 30min, then dries up by nitrogen gun;Cleaned silicon chip is put into PECVD device, deposits one layer of silicon nitride film, Thickness about 400nm;By Wafer Cleaning, spin coating one layer photoetching glue, photoresist parameter is low speed 900rpm spin coating 13s, at a high speed 4500rpm spin coating 50s;Being then covered by interdigital electrode mask, expose 7s, develop 65s;Putting in magnetic control sputtering device, magnetic control spatters Penetrating Cr film, as interdigital electrode layer, thickness is 700nm, washes silicon chip surface photoresist subsequently;
Step 2, prepares microcavity:
The silicon chip substrate that will process through step one, first with 75% ethanol solution, its surface wipes is clean, use flame to add Full-boiled process, is placed in silicon chip substrate on flame, from the beginning of one end, draws once at interval of 1cm, to form the microcavity of 2 tapers;Micro- Cavity configuration enhances the sensitivity of sensitive blocks, and then the power of test of this detection equipment is strengthened so that it is the suction to hydrogen Attached very competent;
Step 3, preparation PANI film:
Take a certain amount of polyaniline and be dissolved in dimethylformamide formation saturated solution, use spin coating-czochralski method to satisfy With the surface that solution is spun to the silicon chip substrate processed through step 2, the speed of spin coating is 3000rpm, and then spin coating 10s exists The baking oven of 100 DEG C is dried overnight, obtains PANI film on silicon chip substrate surface;
Step 4, preparation HKUST-1 film:
1) putting in magnetron sputtering by silicon chip substrate, base vacuum is less than 1.5 × 10-3The Ni film of Pa, magnetron sputtering 30nm 5, silicon chip extracting is stand-by;
2) H is weighed3BTC 0.336g in another small beaker, with 19.2mL ethanol be completely dissolved water white transparency is molten Liquid, weighs Cu (NO3)2·3H2O 0.7g, in small beaker, uses 19.2mL deionized water dissolving, by H3BTC solution is along walls of beaker Pour Cu (NO into3)2·3H2O solution stirs half an hour, obtains HKUST-1 mother solution azury;The HKUST-1 mother that will prepare Liquid and silicon chip substrate are placed in the reactor of 50mL, utilize hydrothermal synthesis method to synthesize MOF film, and reaction temperature is 135 DEG C, reacts 2 After it, repeatedly rinse several times with methanol after silicon chip substrate being taken out with tweezers, dry 1 hour in 100 DEG C, in silicon chip substrate To blue HKUST-1 film, the thickness of HKUST-1 film is about 2~60 μm;Owing to using Ni layer as metal-organic framework materials The catalyst of film forming, the Ni film on PANI surface can be with HKUST-1 film reaction, and therefore, on the one hand the rate of film build of HKUST-1 improves 30%, on the other hand PANI film improves 20% with the binding ability of HKUST-1 film, makes to combine film layer and has higher stablizing Property, so that the sensing performance of the type gas sense module being thus prepared from is more stable;
Step 5, preparation BSP film:
1) BSP sub-micrometer rod growth: In (NO3)3·x H2O (0.08g) and H3BTC (0.068g) joins mixed solvent H2In O/DMF (1:1,10mL), stir 10min under room temperature and make solution A, by photochromic compounds BSP (0.057mmol) joining in solution A, dark place is stirred 1 hour;
2) film forming: by film forming on BSP solution rotation silicon chip/PANI/HKUST-1 film, the speed of rotation is 5000rpm, rotation Time is 5 seconds;Owing to, in the preparation process of the gas sensitization module used at it, adding on its surface and there is fluorescence property BSP photochromic molecule, this photochromic molecule, under electromagnetism excitation, can send fluorescence in there is inflammable and explosive hazardous environment, make This detection equipment is capable of qualitative and quantitative detection environment and includes that hydrogen, at interior flammable explosive gas, can make to endanger The probability of dangerous situation condition reduces 50%;
Step 5, sensitive blocks assembles:
Silicon chip substrate being put in hollow structure shell, wafer sections down, place towards small ventilating holes by sensitive thin film part, Metal wire connects interdigital electrode and data read module on silicon chip.Owing to the manufacturing process of this sensitive blocks is the most simple and convenient and Fast, substantial amounts of man power and material can be saved, there are the potentiality of large-scale industrial production.
Experiment test:
(1) hydrogen test: 25 ± 2 DEG C of conditions, each leads into the nitrogen of air, hydrogen and hydrogen, and flow velocity is 1000ml/ Min, load resistance is 200 Ω;During blowing air, gas sensor signal value is O;Being passed through 500ppm hydrogen, gas sensor is believed Number value changes to rapidly 50.0mV in 2s, and signal value tends towards stability in 2min;Be passed through air after 5min, signal value in Return to 0 value in 1min and tend towards stability in 2min;Through 2000 stability tests, its data variation rate is less than 10%.Survey Test result shows that this solid waste analyte detection equipment has good response performance to hydrogen.
(2) ammonia test: 25 ± 2 DEG C of conditions, each leads into air ammonia and the nitrogen containing ammonia, and flow velocity is 1000ml/ Min, load resistance is 200 Ω;During blowing air, gas sensor signal value is O;Being passed through 2000ppm ammonia, gas is through 2000 Secondary stability test, sensor signal value changes to rapidly 15.0mV in 1s, and signal value tends towards stability in 2min;5min After be passed through air, signal value returns to 0 value in 20s and tends towards stability in 5min;Its data variation rate is less than 10%.Pass through 2000 stability tests, its data variation rate is less than 10%.Test result shows that this solid waste analyte detection equipment is to ammonia There is good response performance.
(3) hydrogen sulfide test: 25 ± 2 DEG C of conditions, each leads into air and hydrogen sulfide containing nitrogen, and flow velocity is 1000ml/ Min, load resistance is 200 Ω;During blowing air, gas sensor signal value is O;It is passed through 100ppm ammonia, sensor signal value In 1s, change to rapidly 30.0mV, and signal value tends towards stability in 3min;Being passed through air after 5min, signal value is in 2min Return to 0 value and tend towards stability in 5min;Its data variation rate is less than 10%.Through 2000 stability tests, its data become Rate is less than 10%.Test result shows that this solid waste analyte detection equipment has good response performance to hydrogen sulfide gas.
Test result indicate that: the sensitive property of also this to ammonia and hydrogen sulfide poisonous and hazardous gas of this sensitive blocks increases Strong by 40%, select performance to improve 50%, make this detection equipment that sensitivity and the selectivity of toxic and harmful all to be obtained Improve, reduce the risk of production.
From the point of view of applicable cases according to application scenarios 1 to application scenarios 5, present invention have the advantage that
1, a kind of gas separation equipment for sewage treatment area that embodiments of the invention are provided, this equipment uses Type gas sense module due to based on resistive type metal-organic framework materials, and metal-organic framework materials film forming is in polyaniline On film, owing to polyaniline has strong electric conductivity, therefore, further enhancing the sensitivity of type gas sense module, and then make The sensitivity of gas is significantly strengthened by this detection equipment.Additionally, due to use Ni layer as metallic organic framework The catalyst of material filming, the Ni film on PANI surface can be with HKUST-1 film reaction, therefore, on the one hand promotes the one-tenth of HKUST-1 Film, on the other hand improves the binding ability of PANI film and HKUST-1 film, makes to combine film layer and have higher stability, thus Make the sensing performance of type gas sense module being thus prepared from more stable.
2, a kind of gas separation equipment for sewage treatment area that embodiments of the invention are provided, owing to making at it Gas sensitization module preparation process in, add the BSP photochromic molecule with fluorescence property on its surface, this variable color divides Son, under electromagnetism excitation, can send fluorescence in there is inflammable and explosive hazardous environment, make this detection equipment be capable of qualitative Include that hydrogen, at interior flammable explosive gas, can make the probability of the situation of causing danger reduce with quantitative detection environment.
3, a kind of gas separation equipment for sewage treatment area that embodiments of the invention are provided, uses polyaniline As substrate liquid spin coating silicon chip substrate, owing to making silicon chip substrate be made for the structure of similar microcavity in preparation process, and add Material including BSP, micro-cavity structure enhances the sensitivity of sensitive blocks, and then the power of test of this detection equipment obtains To strengthening so that it is extremely strong to the absorbability of hydrogen;Additionally, this sensitive blocks is also this poisonous and hazardous to ammonia and hydrogen sulfide Gas has the strongest sensitivity and selects performance, makes this detection equipment all obtain sensitivity and the selectivity of toxic and harmful Improve, reduce the risk of production;Finally, due to the manufacturing process of this sensitive blocks is the most simple and convenient and quick, can save Substantial amounts of man power and material, has the potentiality of large-scale industrial production, and therefore, the one that embodiments herein is provided is used for The gas separation equipment of sewage treatment area has great promotional value.
Last it should be noted that, above example is only in order to illustrate technical scheme, rather than the present invention is protected Protecting the restriction of scope, although having made to explain to the present invention with reference to preferred embodiment, those of ordinary skill in the art should Work as understanding, technical scheme can be modified or equivalent, without deviating from the reality of technical solution of the present invention Matter and scope.

Claims (4)

1. the gas separation equipment for sewage treatment area, it is characterised in that include tank body;The upper and lower two ends of described tank body Be symmetrically arranged with air vent and sewage draining exit, two sidewalls of described tank body be respectively arranged with inlet and leakage fluid dram, described in enter Liquid mouth one end connects cyclone, and the other end is horizontally extending to tank body, and described cyclone is arranged at described tank body Upper position, and it is provided with the cyclone support member for supporting cyclone below;Flange phase is passed through on the top of described tank body Connecting, described flange is fastened by securing member;Upper position and the position longitudinally perpendicular with air vent holding of described tank body set Being equipped with a defecator, described defecator is provided above a detector, and this gas sensitization module is arranged at row At QI KOU;Described vent position is provided with electromagnetic valve;Described tank body top is provided with relief valve.
A kind of gas separation equipment for sewage treatment area the most according to claim 1, it is characterised in that described row Liquid mouth is arranged at below described inlet.
A kind of gas separation equipment for sewage treatment area the most according to claim 1, it is characterised in that described row Liquid mouth is positioned at below described cyclone support member.
A kind of gas separation equipment for sewage treatment area the most according to claim 1, it is characterised in that described tightly Firmware is bolt.
CN201610594821.1A 2016-07-25 2016-07-25 A kind of gas separation equipment for sewage treatment area Pending CN106167287A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103033539A (en) * 2012-12-20 2013-04-10 中国科学院微电子研究所 Preparation method of sensitive film based on flexible substrate for detecting gas at normal temperature
CN103258954A (en) * 2012-02-17 2013-08-21 中国科学院微电子研究所 Gas sensor based on flexible substrate and preparation method thereof
CN204920864U (en) * 2015-09-07 2015-12-30 苏州科润商务信息咨询有限公司 Drilling fluid gas separator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103258954A (en) * 2012-02-17 2013-08-21 中国科学院微电子研究所 Gas sensor based on flexible substrate and preparation method thereof
CN103033539A (en) * 2012-12-20 2013-04-10 中国科学院微电子研究所 Preparation method of sensitive film based on flexible substrate for detecting gas at normal temperature
CN204920864U (en) * 2015-09-07 2015-12-30 苏州科润商务信息咨询有限公司 Drilling fluid gas separator

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Application publication date: 20161130