CN106014854B - A kind of wind power generation blade assisted heating device for power domain - Google Patents

A kind of wind power generation blade assisted heating device for power domain Download PDF

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Publication number
CN106014854B
CN106014854B CN201610589131.7A CN201610589131A CN106014854B CN 106014854 B CN106014854 B CN 106014854B CN 201610589131 A CN201610589131 A CN 201610589131A CN 106014854 B CN106014854 B CN 106014854B
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film
heat pipes
silicon chip
hkust
chip substrate
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CN106014854A (en
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杨林
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State Grid Corp of China SGCC
Anyang Power Supply Co of State Grid Henan Electric Power Co Ltd
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State Grid Corp of China SGCC
Anyang Power Supply Co of State Grid Henan Electric Power Co Ltd
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F03—MACHINES OR ENGINES FOR LIQUIDS; WIND, SPRING, OR WEIGHT MOTORS; PRODUCING MECHANICAL POWER OR A REACTIVE PROPULSIVE THRUST, NOT OTHERWISE PROVIDED FOR
    • F03D—WIND MOTORS
    • F03D1/00—Wind motors with rotation axis substantially parallel to the air flow entering the rotor 
    • F03D1/06—Rotors
    • F03D1/065—Rotors characterised by their construction elements
    • F03D1/0675—Rotors characterised by their construction elements of the blades
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F05—INDEXING SCHEMES RELATING TO ENGINES OR PUMPS IN VARIOUS SUBCLASSES OF CLASSES F01-F04
    • F05B—INDEXING SCHEME RELATING TO WIND, SPRING, WEIGHT, INERTIA OR LIKE MOTORS, TO MACHINES OR ENGINES FOR LIQUIDS COVERED BY SUBCLASSES F03B, F03D AND F03G
    • F05B2260/00—Function
    • F05B2260/20—Heat transfer, e.g. cooling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/70—Wind energy
    • Y02E10/72—Wind turbines with rotation axis in wind direction

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

The invention discloses a kind of wind power generation blade assisted heating device for power domain, the air-heater including being placed in web one end；The air-heater is connected with the first heat pipes, the second heat pipes and third heat pipes and first heat pipes, second heat pipes, the third heat pipes by being set to a hot wind machine baffle of root of blade；First heat pipes, second heat pipes, the third heat pipes extend in blade from the air-heater；The blade edge is that hollow state forms blade cavity, is placed with detector in the blade cavity.

Description

A kind of wind power generation blade assisted heating device for power domain
Technical field
The present invention relates to power domains, are more particularly to a kind of wind power generation blade auxiliary heating dress for power domain It sets.
Background technique
During wind-power electricity generation, the pernicious gas of toxic, flammability, explosivity, radioactivity, corrosivity etc. may be contained Or such hazardous gas can be generated, it is higher to the testing requirements sensitivity of such hazardous gas, stability etc..
The method of conventional detection gas is to acquire gas at the scene, is stored in clean sample devices, is then sent to Laboratory, using in the detection gas such as various instruments, such as GC, GC/MS or LC/MS ingredient and it is quantitative the problems such as, however, Above-mentioned detection method not only needs a large amount of sample collector to carry out spot sampling, consumes a large amount of manpower and material resources, and in sample In product transportational process, it is frequently present of contaminated problem, send the gaseous sample to laboratory that cannot react necessary being at all Problem or its harmfulness to environmental functional unable to monitor.
Summary of the invention
A kind of wind-force for power domain is provided it is an object of the invention to avoid shortcoming in the prior art Power generation blade assisted heating device.
The purpose of the present invention is achieved through the following technical solutions：A kind of wind power generation blade auxiliary for power domain plus Thermal, which is characterized in that the air-heater including being placed in web one end；The air-heater is connected with the first heat pipes, Two heat pipes and third heat pipes and first heat pipes, second heat pipes, the third heat pipes By a hot wind machine baffle for being set to root of blade；First heat pipes, second heat pipes, the third Heat pipes extend in blade from the air-heater；The blade edge is that hollow state forms blade cavity, the blade Detector is placed in cavity.
A kind of wind power generation blade assisted heating device for power domain that the embodiment of the present invention provides, in blade It is placed with detector in cavity, solves the above problem.
Detailed description of the invention
The drawings herein are incorporated into the specification and forms part of this specification, and shows and meets implementation of the invention Example, and be used to explain the principle of the present invention together with specification.
Fig. 1 is structural schematic diagram of the invention.
Fig. 2 is the structural schematic diagram for the detector that the present invention shown according to an exemplary embodiment uses.
The structural schematic diagram for the sensitive blocks that Fig. 3 present invention shown according to an exemplary embodiment uses.
Fig. 4 is the preparation process flow block diagram for the sensitive blocks that the present invention shown according to an exemplary embodiment uses.
Wherein：1- silicon wafer, 2- silicon nitride layer, 3-Cr film layer, 4-PANI film, 5-Ni film, 6-HKUST-1 film, 7-BSP film, 8- air-heater, the first heat pipes of 9-, 10- sensitive blocks, 11- detector, 12- web, the second heat pipes of 13-, 14- Third heat pipes, 15- hot wind machine baffle, 16- blade cavity.
Specific embodiment
Example embodiments are described in detail here, and the example is illustrated in the accompanying drawings.Following description is related to When attached drawing, unless otherwise indicated, the same numbers in different drawings indicate the same or similar elements.Following exemplary embodiment Described in embodiment do not represent all embodiments consistented with the present invention.On the contrary, they be only with it is such as appended The example of device and method being described in detail in claims, some aspects of the invention are consistent.
In the description of the present application, it should be noted that unless otherwise specified and limited, term " installation ", " connected ", " connection " shall be understood in a broad sense, for example, it may be mechanical connection or electrical connection, the connection being also possible to inside two elements can , can also indirectly connected through an intermediary, for the ordinary skill in the art to be to be connected directly, it can basis Concrete condition understands the concrete meaning of above-mentioned term.
With economic fast development and industrial expansion, can not only be generated in industry manufacture production process various The exhaust gas of various kinds can also generate various gases in manufactured various instruments in use, and the generation of these gases not only can The use of instrument itself is influenced, and the potential threat of environmental pollution can be become.
Therefore, it is necessary to look for a kind of equipment that can monitor the gas that various instruments generate in use, and can With the gas sensor of timely feedback monitoring to gas data.
The method of conventional detection gas is to acquire gas at the scene, is stored in clean sample devices, is then sent to Laboratory, using in the detection gas such as various instruments, such as GC, GC/MS or LC/MS ingredient and it is quantitative the problems such as, however, Above-mentioned detection method not only needs a large amount of sample collector to carry out spot sampling, consumes a large amount of manpower and material resources, and in sample In product transportational process, it is frequently present of contaminated problem, the gaseous sample to laboratory is sent to be unable to existing for reactor tool at all Problem or its harmfulness to environmental functional unable to monitor.
In existing report, has existed and gas detection sensor is made come detection gas using inorganic material film, but It is that above-mentioned gas sensor has the following problems：The membrane material service life of use is short, and when humidity is biggish in the environment It waits, is easy failure, its effect cannot be played well.Therefore, need to find one kind can on a large scale it is sensitive to hydrone and It can monitor and separate in time the material of measured target gas station.
Metal-organic framework materials (MOFs) are the bonding modes and one for passing through coordinate bond by metal ion or metal cluster What a little organic ligands combinations were formed, due to the difference of metal ion or organic ligand, various topological structures can be shown. MOFs itself has many advantages, such as that pore size is adjustable, specific surface area is high, in gas-liquid separation, catalysis, light, electricity, gas sensing etc. Aspect has potential using value.Wherein HKUST-1 is a kind of typical metal-organic framework materials, very quick to hydrogen Sense, when it is contacted with hydrogen, the skeleton flexibility of HKUST-1 can become due to sucking different guest molecules in duct Change, this variation can cause the variation of its unit cell again, and the variation of unit cell eventually results in the change of HKUST-1 film resistance, lead to The concentration variation of hydrogen to be measured can sensitively be reacted by crossing measurement resistance.
The present invention is based on resistor-type HKUST-1 membrane materials, design hydrogen gas sensor, the fork using Cr film as sensitive blocks Refer to electrode layer, the catalyst that Ni film forms a film as HKUST-1.
The invention will be further described with the following Examples.
Application scenarios 1
Fig. 1 is a kind of wind power generation blade auxiliary heating dress for power domain shown according to an exemplary embodiment It sets, which is characterized in that the air-heater 8 including being placed in 12 one end of web；The air-heater 8 is connected with the first heat pipes 9, Two heat pipes 13 and third heat pipes 14 and first heat pipes 9, second heat pipes 13, the third add Heat pipe part 14 is by being set to a hot wind machine baffle 15 of root of blade；First heat pipes 9, second heating tube Part 13, the third heat pipes 14 extend in blade from the air-heater 8；The blade edge is that hollow state forms leaf Piece cavity 16,16 are placed with detector 11 in the blade cavity.
A kind of wind power generation blade assisted heating device for power domain that the embodiment of the present invention provides, in blade It is placed with detector in cavity, solves the above problem.
Preferably, it is provided on the hot wind machine baffle 15 and first heat pipes 9, second heat pipes 13, the aperture that the third heat pipes 14 match.
Preferably, rear end 80cm~85cm of the front end of second heat pipes 13 apart from the web 12.
Preferably, rear end 83cm of the front end of second heat pipes 13 apart from the web 12.
Preferably, first heat pipes 9, second heat pipes 13, the third heat pipes 14 are along longitudinal direction Spaced set.
Preferably, first heat pipes 9, second heat pipes 13, the third heat pipes 14 are along longitudinal direction Apart from one another by 10cm.
Fig. 2 is the structural schematic diagram for the detector 11 that the present invention shown according to an exemplary embodiment uses.Such as Shown in Fig. 2, the detector 11 includes sensitive blocks 10 and data read module 20, during the sensitive blocks 10 are placed on Hollow structure is in the shell of air hole.
The structural schematic diagram for the sensitive blocks that Fig. 3 present invention shown according to an exemplary embodiment uses, such as Fig. 3 institute Show, which includes silicon chip substrate, PANI film 4, Ni film 5, HKUST-1 film 6 and BSP film 7；The silicon chip substrate includes Silicon wafer 1, silicon nitride film 2 and Cr film layer 3, silicon nitride film 2 are used as insulating layer, and Cr film layer 3 is used as interdigital electrode layer；The Ni film 5 It is prepared using magnetron sputtering method, with a thickness of 10nm；The thickness of the HKUST-1 film 6 is about 2~60 μm；The Cr film layer 3 and number It is conductively connected according to read module 20.
Fig. 4 is the preparation process flow block diagram for the sensitive blocks that the present invention shown according to an exemplary embodiment uses, As shown in figure 4, the production of the sensitive blocks 10 includes the following steps：
Step 1 prepares silicon chip substrate：
N-type silicon chip is taken, cut size is 5cm × 1cm, successively by acetone, ethyl alcohol, deionized water ultrasonic cleaning, ultrasound Time is 30min, is then dried up with nitrogen gun；The silicon wafer cleaned is put into PECVD device, deposits one layer of silicon nitride film, Thickness about 200nm；By Wafer Cleaning, one layer photoresist of spin coating, photoresist parameter is low speed 900rpm spin coating 13s, high speed 4500rpm spin coating 50s；Then interdigital electrode mask is covered, 7s is exposed, develop 65s；It is put into magnetic control sputtering device, magnetic control splashes Cr film is penetrated, as interdigital electrode layer, with a thickness of 500nm, then washes silicon chip surface photoresist；
Step 2 prepares microcavity：
The silicon chip substrate that will be handled through step 1, it is first with 75% ethanol solution that its surface wipes are clean, using flame plus Silicon chip substrate is placed on flame by thermal method, since one end, is drawn once at interval of 1cm, to form the microcavity of 2 cone cells；It is micro- Cavity configuration enhances the sensitivity of sensitive blocks, and then the detectability of the detection device is enhanced, and makes its suction to hydrogen It is attached very competent；
Step 3 prepares PANI film：
It takes a certain amount of polyaniline to be dissolved in dimethylformamide and forms saturated solution, will be satisfied using spin coating-czochralski method It is spun to the surface through the processed silicon chip substrate of step 2 with solution, the speed of spin coating is 3000rpm, then spin coating 10s exists It is dried overnight in 100 DEG C of baking oven, obtains PANI film on silicon chip substrate surface；The type gas sense module of use is due to being based on resistance Metal-organic framework materials of type, and metal-organic framework materials film forming is on polyaniline film, due to polyaniline have it is strong Therefore electric conductivity further enhances the sensitivity of type gas sense module, and then make the detection device to the sensitivity of gas Significantly reinforced；
Step 4 prepares HKUST-1 film：
1) silicon chip substrate is put into magnetron sputtering, base vacuum is lower than 1.5 × 10-3The Ni film of Pa, magnetron sputtering 10nm 5, silicon chip extracting is stand-by；
2) H is weighed3BTC 0.336g is completely dissolved colorless and transparent molten in another small beaker with 19.2mL ethyl alcohol Liquid weighs Cu (NO3)2·3H2O 0.7g is in small beaker, with 19.2mL deionized water dissolving, by H3BTC solution is along walls of beaker Pour into Cu (NO3)2·3H2Half an hour is stirred in O solution, obtains HKUST-1 mother liquor azury；Prepared HKUST-1 is female Liquid and silicon chip substrate are placed in the reaction kettle of 50mL, synthesize MOF film using hydrothermal synthesis method, reaction temperature is 135 DEG C, reaction 2 After it, after being taken out silicon chip substrate with tweezers several times with methanol repeated flushing, dried 1 hour in 100 DEG C, in silicon chip substrate To the HKUST-1 film of blue, the thickness of HKUST-1 film is about 2~60 μm；Due to being used as metal-organic framework materials using Ni layers Therefore on the one hand the Ni film of the catalyst of film forming, the surface PANI can promote the film forming of HKUST-1 with HKUST-1 film reaction, On the other hand the binding performance for improving PANI film Yu HKUST-1 film makes that film layer is combined to have stronger stability, so that Thus the sensing performance for the type gas sense module being prepared is more stable；
Step 5 prepares BSP film：
1) BSP sub-micrometer rod is grown：In(NO3)3·x H2O (0.08g) and H3BTC (0.068g) is added to mixed solvent H2O/DMF(1:1,10mL) in, 10min is stirred at room temperature, solution A is made, by photochromic compounds BSP (0.057mmol) is added in solution A, and dark place is stirred 1 hour；
2) it forms a film：BSP solution is revolved and is formed a film on Tu silicon wafer/PANI/HKUST-1 film, the speed for revolving Tu is 5000rpm, rotation The Tu time is 5 seconds；Due to joined on its surface with fluorescence property in the preparation process for the gas sensitization module that it is used BSP photochromic molecule, which can issue fluorescence in there are inflammable and explosive hazardous environment, make under electromagnetism excitation The detection device can be realized the flammable explosive gas in qualitative and quantitative detection environment including hydrogen, can make to endanger A possibility that dangerous situation condition, reduces；
Step 5, sensitive blocks assembling：
Silicon chip substrate is put into hollow structure shell, wafer sections downward, place towards small ventilating holes by sensitive thin film part, Metal wire connects interdigital electrode and data read module on silicon wafer.Since the manufacturing process of the sensitive blocks is very simple and convenient and Fast, a large amount of man power and material can be saved, the potentiality with large-scale industrial production.
Experiment test：
(1) experiments Hydrogen：25 ± 2 DEG C of conditions each lead into the nitrogen of air, hydrogen and hydrogen, flow velocity 1000ml/ Min, load resistance are 200 Ω；When blowing air, gas sensor signal value is O；It is passed through 1ppm hydrogen, gas sensor signal Value changes to rapidly 1.0mV in 10s, and tends towards stability in signal value in 20s；Air is passed through after 1min, signal value is in 5s Return to 0 value and in tending towards stability in 30s；By 2000 stability tests, data variation rate is less than 10%；Test result is aobvious Show that the solid waste detection device has good response performance to hydrogen.
(2) ammonia is tested：25 ± 2 DEG C of conditions each lead into air ammonia and the nitrogen containing ammonia, flow velocity 1000ml/ Min, load resistance are 200 Ω；When blowing air, gas sensor signal value is O；It is passed through 100ppm ammonia, gas sensor letter Number value changes to rapidly 5.0mV in 10s, and tends towards stability in signal value in 1min；Be passed through air after 5min, signal value in 0 value is returned in 10s and in tending towards stability in 0.5min；By 2000 stability tests, data variation rate is less than 10%；It surveys Test result shows that the solid waste detection device has good response performance to ammonia.
(3) hydrogen sulfide is tested：25 ± 2 DEG C of conditions each lead into air and hydrogen sulfide containing nitrogen, flow velocity 1000ml/ Min, load resistance are 200 Ω；When blowing air, gas sensor signal value is O；It is passed through 0.05ppm hydrogen sulfide gas, gas passes Sensor signal value changes to rapidly 3.0mV in 10s, and tends towards stability in signal value in 30s；Air, signal are passed through after 5min It is worth in returning to 0 value in 5s and in tending towards stability in 10s；By 2000 stability tests, data variation rate is less than 10%；It surveys Test result shows that the solid waste detection device has good response performance to hydrogen sulfide gas.
The experimental results showed that：The sensitive blocks poisonous and hazardous gas also this to ammonia and hydrogen sulfide has very strong quick Sense and selection performance, are improved the detection device all to the susceptibility of toxic and harmful gas and selectivity, reduce production Risk.
Application scenarios 2：
Fig. 1 is a kind of wind power generation blade auxiliary heating dress for power domain shown according to an exemplary embodiment It sets, which is characterized in that the air-heater 8 including being placed in 12 one end of web；The air-heater 8 is connected with the first heat pipes 9, Two heat pipes 13 and third heat pipes 14 and first heat pipes 9, second heat pipes 13, the third add Heat pipe part 14 is by being set to a hot wind machine baffle 15 of root of blade；First heat pipes 9, second heating tube Part 13, the third heat pipes 14 extend in blade from the air-heater 8；The blade edge is that hollow state forms leaf Piece cavity 16,16 are placed with detector 11 in the blade cavity.
A kind of wind power generation blade assisted heating device for power domain that the embodiment of the present invention provides, in blade It is placed with detector in cavity, solves the above problem.
Preferably, it is provided on the hot wind machine baffle 15 and first heat pipes 9, second heat pipes 13, the aperture that the third heat pipes 14 match.
Preferably, rear end 80cm~85cm of the front end of second heat pipes 13 apart from the web 12.
Preferably, rear end 83cm of the front end of second heat pipes 13 apart from the web 12.
Preferably, first heat pipes 9, second heat pipes 13, the third heat pipes 14 are along longitudinal direction Spaced set.
Preferably, first heat pipes 9, second heat pipes 13, the third heat pipes 14 are along longitudinal direction Apart from one another by 10cm.
Fig. 2 is the structural schematic diagram for the detector that the present invention shown according to an exemplary embodiment uses.Such as Fig. 2 Shown, the detector 11 includes sensitive blocks 10 and data read module 20, and the sensitive blocks 10 are placed on hollow Structure is in the shell of air hole.
The structural schematic diagram for the sensitive blocks that Fig. 3 present invention shown according to an exemplary embodiment uses, such as Fig. 3 institute Show, which includes silicon chip substrate, PANI film 4, Ni film 5, HKUST-1 film 6 and BSP film 7；The silicon chip substrate includes Silicon wafer 1, silicon nitride film 2 and Cr film layer 3, silicon nitride film 2 are used as insulating layer, and Cr film layer 3 is used as interdigital electrode layer；The Ni film 5 It is prepared using magnetron sputtering method, with a thickness of 10nm；The thickness of the HKUST-1 film 6 is about 2~60 μm；The Cr film layer 3 and number It is conductively connected according to read module 20.
Fig. 4 is the preparation process flow block diagram for the sensitive blocks that the present invention shown according to an exemplary embodiment uses, As shown in figure 4, the production of the sensitive blocks 10 includes the following steps：
Step 1 prepares silicon chip substrate：
N-type silicon chip is taken, cut size is 5cm × 1cm, successively by acetone, ethyl alcohol, deionized water ultrasonic cleaning, ultrasound Time is 30min, is then dried up with nitrogen gun；The silicon wafer cleaned is put into PECVD device, deposits one layer of silicon nitride film, Thickness about 210nm；By Wafer Cleaning, one layer photoresist of spin coating, photoresist parameter is low speed 900rpm spin coating 13s, high speed 4500rpm spin coating 50s；Then interdigital electrode mask is covered, 7s is exposed, develop 65s；It is put into magnetic control sputtering device, magnetic control splashes Cr film is penetrated, as interdigital electrode layer, with a thickness of 510nm, then washes silicon chip surface photoresist；
Step 2 prepares microcavity：
The silicon chip substrate that will be handled through step 1, it is first with 75% ethanol solution that its surface wipes are clean, using flame plus Silicon chip substrate is placed on flame by thermal method, since one end, is drawn once at interval of 1cm, to form the microcavity of 2 cone cells；It is micro- Cavity configuration enhances the sensitivity of sensitive blocks, and then the detectability of the detection device is enhanced, and makes its suction to hydrogen It is attached very competent；
Step 3 prepares PANI film：
It takes a certain amount of polyaniline to be dissolved in dimethylformamide and forms saturated solution, will be satisfied using spin coating-czochralski method It is spun to the surface through the processed silicon chip substrate of step 2 with solution, the speed of spin coating is 3000rpm, then spin coating 10s exists It is dried overnight in 100 DEG C of baking oven, obtains PANI film on silicon chip substrate surface；
Step 4 prepares HKUST-1 film：
1) silicon chip substrate is put into magnetron sputtering, base vacuum is lower than 1.5 × 10-3The Ni film of Pa, magnetron sputtering 10nm 5, silicon chip extracting is stand-by；
2) H is weighed3BTC 0.336g is completely dissolved colorless and transparent molten in another small beaker with 19.2mL ethyl alcohol Liquid weighs Cu (NO3)2·3H2O 0.7g is in small beaker, with 19.2mL deionized water dissolving, by H3BTC solution is along walls of beaker Pour into Cu (NO3)2·3H2Half an hour is stirred in O solution, obtains HKUST-1 mother liquor azury；Prepared HKUST-1 is female Liquid and silicon chip substrate are placed in the reaction kettle of 50mL, synthesize MOF film using hydrothermal synthesis method, reaction temperature is 135 DEG C, reaction 2 After it, after being taken out silicon chip substrate with tweezers several times with methanol repeated flushing, dried 1 hour in 100 DEG C, in silicon chip substrate To the HKUST-1 film of blue, the thickness of HKUST-1 film is about 2~60 μm；Due to being used as metal-organic framework materials using Ni layers The Ni film of the catalyst of film forming, the surface PANI can be with HKUST-1 film reaction, and therefore, the rate of film build of one side HKUST-1 improves 10%, another aspect PANI film and the binding performance of HKUST-1 film improve 5%, make that film layer is combined to have stronger stability, So that the sensing performance for the type gas sense module being thus prepared is more stable；
Step 5 prepares BSP film：
1) BSP sub-micrometer rod is grown：In(NO3)3·x H2O (0.08g) and H3BTC (0.068g) is added to mixed solvent H2O/DMF(1:1,10mL) in, 10min is stirred at room temperature, solution A is made, by photochromic compounds BSP (0.057mmol) is added in solution A, and dark place is stirred 1 hour；
2) it forms a film：BSP solution is revolved and is formed a film on Tu silicon wafer/PANI/HKUST-1 film, the speed for revolving Tu is 5000rpm, rotation The Tu time is 5 seconds；
Due to joined on its surface with fluorescence property in the preparation process for the gas sensitization module that it is used BSP photochromic molecule, the photochromic molecule can issue fluorescence in there are inflammable and explosive hazardous environment, make this under electromagnetism excitation Detection device can be realized the flammable explosive gas in qualitative and quantitative detection environment including hydrogen, can make to cause danger A possibility that situation, reduces 10%；
Step 5, sensitive blocks assembling：
Silicon chip substrate is put into hollow structure shell, wafer sections downward, place towards small ventilating holes by sensitive thin film part, Metal wire connects interdigital electrode and data read module on silicon wafer.Since the manufacturing process of the sensitive blocks is very simple and convenient and Fast, a large amount of man power and material can be saved, the potentiality with large-scale industrial production.
Experiment test：
(1) hydrogen is tested：25 ± 2 DEG C of conditions, each lead into the nitrogen of air and hydrogen, flow velocity 1000ml/min, Load resistance is 200 Ω；When blowing air, gas sensor signal value is O；It is passed through 10ppm hydrogen, gas sensor signal value exists 3.0mV is changed in 8s rapidly, and is tended towards stability in signal value in 30s；It is passed through air after 1min, signal value is in returning to 0 in 10s Value and in tending towards stability in 1min；By 2000 stability tests, data variation rate is less than 10%.Test result shows this Solid waste detection device has good response performance to hydrogen.
(2) ammonia is tested：25 ± 2 DEG C of conditions each lead into air ammonia and the nitrogen containing ammonia, flow velocity 1000ml/ Min, load resistance are 200 Ω；When blowing air, gas sensor signal value is O；It is passed through 200ppm ammonia, gas sensor letter Number value changes to rapidly 10.0mV in 5s, and tends towards stability in signal value in 1min；Be passed through air after 5min, signal value in 0 value is returned in 10s and in tending towards stability in 0.5min；By 2000 stability tests, data variation rate is less than 10%.It surveys Test result shows that the solid waste detection device has good response performance to ammonia.
(3) hydrogen sulfide is tested：25 ± 2 DEG C of conditions each lead into air and hydrogen sulfide containing nitrogen, flow velocity 1000ml/ Min, load resistance are 200 Ω；When blowing air, gas sensor signal value is O；It is passed through 0.1ppm ammonia, gas sensor letter Number value changes to rapidly 5.0mV in 7s, and tends towards stability in signal value in 30s；Air is passed through after 5min, signal value is in 5s Return to 0 value and in tending towards stability in 0.5min；By 2000 stability tests, data variation rate is less than 10%.Test knot Fruit shows that the solid waste detection device has good response performance to hydrogen sulfide gas.
The experimental results showed that：The sensitive property of the sensitive blocks poisonous and hazardous gas also this to ammonia and hydrogen sulfide increases Strong 5% and selection performance improve 8%, mention the detection device all to the susceptibility of toxic and harmful gas and selectivity Height reduces the risk of production.
Application scenarios 3：
Fig. 1 is a kind of wind power generation blade auxiliary heating dress for power domain shown according to an exemplary embodiment It sets, which is characterized in that the air-heater 8 including being placed in 12 one end of web；The air-heater 8 is connected with the first heat pipes 9, Two heat pipes 13 and third heat pipes 14 and first heat pipes 9, second heat pipes 13, the third add Heat pipe part 14 is by being set to a hot wind machine baffle 15 of root of blade；First heat pipes 9, second heating tube Part 13, the third heat pipes 14 extend in blade from the air-heater 8；The blade edge is that hollow state forms leaf Piece cavity 16,16 are placed with detector 11 in the blade cavity.
A kind of wind power generation blade assisted heating device for power domain that the embodiment of the present invention provides, in blade It is placed with detector in cavity, solves the above problem.
Preferably, it is provided on the hot wind machine baffle 15 and first heat pipes 9, second heat pipes 13, the aperture that the third heat pipes 14 match.
Preferably, rear end 80cm~85cm of the front end of second heat pipes 13 apart from the web 12.
Preferably, rear end 83cm of the front end of second heat pipes 13 apart from the web 12.
Preferably, first heat pipes 9, second heat pipes 13, the third heat pipes 14 are along longitudinal direction Spaced set.
Preferably, first heat pipes 9, second heat pipes 13, the third heat pipes 14 are along longitudinal direction Apart from one another by 10cm.
Fig. 2 is the structural schematic diagram for the detector 11 that the present invention shown according to an exemplary embodiment uses.Such as Shown in Fig. 2, the detector 11 includes sensitive blocks 10 and data read module 20, during the sensitive blocks 10 are placed on Hollow structure is in the shell of air hole.
The structural schematic diagram for the sensitive blocks that Fig. 3 present invention shown according to an exemplary embodiment uses, such as Fig. 3 institute Show, which includes silicon chip substrate, PANI film 4, Ni film 5, HKUST-1 film 6 and BSP film 7；The silicon chip substrate includes Silicon wafer 1, silicon nitride film 2 and Cr film layer 3, silicon nitride film 2 are used as insulating layer, and Cr film layer 3 is used as interdigital electrode layer；The Ni film 5 It is prepared using magnetron sputtering method, with a thickness of 12nm；The thickness of the HKUST-1 film 6 is about 20m；The Cr film layer 3 is read with data Modulus block 20 is conductively connected.
Fig. 4 is the preparation process flow block diagram for the sensitive blocks that the present invention shown according to an exemplary embodiment uses, As shown in figure 4, the production of the sensitive blocks 10 includes the following steps：
Step 1 prepares silicon chip substrate：
N-type silicon chip is taken, cut size is 5cm × 1cm, successively by acetone, ethyl alcohol, deionized water ultrasonic cleaning, ultrasound Time is 30min, is then dried up with nitrogen gun；The silicon wafer cleaned is put into PECVD device, deposits one layer of silicon nitride film, Thickness about 220nm；By Wafer Cleaning, one layer photoresist of spin coating, photoresist parameter is low speed 900rpm spin coating 13s, high speed 4500rpm spin coating 50s；Then interdigital electrode mask is covered, 7s is exposed, develop 65s；It is put into magnetic control sputtering device, magnetic control splashes Cr film is penetrated, as interdigital electrode layer, with a thickness of 550nm, then washes silicon chip surface photoresist；
Step 2 prepares microcavity：
The silicon chip substrate that will be handled through step 1, it is first with 75% ethanol solution that its surface wipes are clean, using flame plus Silicon chip substrate is placed on flame by thermal method, since one end, is drawn once at interval of 1cm, to form the microcavity of 2 cone cells；It is micro- Cavity configuration enhances the sensitivity of sensitive blocks, and then the detectability of the detection device is enhanced, and makes its suction to hydrogen It is attached very competent；
Step 3 prepares PANI film：
It takes a certain amount of polyaniline to be dissolved in dimethylformamide and forms saturated solution, will be satisfied using spin coating-czochralski method It is spun to the surface through the processed silicon chip substrate of step 2 with solution, the speed of spin coating is 3000rpm, then spin coating 10s exists It is dried overnight in 100 DEG C of baking oven, obtains PANI film on silicon chip substrate surface；
Step 4 prepares HKUST-1 film：
1) silicon chip substrate is put into magnetron sputtering, base vacuum is lower than 1.5 × 10-3The Ni film of Pa, magnetron sputtering 10nm 5, silicon chip extracting is stand-by；
2) H is weighed3BTC 0.336g is completely dissolved colorless and transparent molten in another small beaker with 19.2mL ethyl alcohol Liquid weighs Cu (NO3)2·3H2O 0.7g is in small beaker, with 19.2mL deionized water dissolving, by H3BTC solution is along walls of beaker Pour into Cu (NO3)2·3H2Half an hour is stirred in O solution, obtains HKUST-1 mother liquor azury；Prepared HKUST-1 is female Liquid and silicon chip substrate are placed in the reaction kettle of 50mL, synthesize MOF film using hydrothermal synthesis method, reaction temperature is 135 DEG C, reaction 2 After it, after being taken out silicon chip substrate with tweezers several times with methanol repeated flushing, dried 1 hour in 100 DEG C, in silicon chip substrate To the HKUST-1 film of blue, the thickness of HKUST-1 film is about 2~60 μm；Due to being used as metal-organic framework materials using Ni layers The Ni film of the catalyst of film forming, the surface PANI can be with HKUST-1 film reaction, and therefore, the rate of film build of one side HKUST-1 improves 20%, another aspect PANI film and the binding performance of HKUST-1 film improve 10%, make that film layer is combined to have stronger stabilization Property, so that the sensing performance for the type gas sense module being thus prepared is more stable；
Step 5 prepares BSP film：
1) BSP sub-micrometer rod is grown：In(NO3)3·x H2O (0.08g) and H3BTC (0.068g) is added to mixed solvent H2O/DMF(1:1,10mL) in, 10min is stirred at room temperature, solution A is made, by photochromic compounds BSP (0.057mmol) is added in solution A, and dark place is stirred 1 hour；
2) it forms a film：BSP solution is revolved and is formed a film on Tu silicon wafer/PANI/HKUST-1 film, the speed for revolving Tu is 5000rpm, rotation The Tu time is 5 seconds；Due to joined on its surface with fluorescence property in the preparation process for the gas sensitization module that it is used BSP photochromic molecule, which can issue fluorescence in there are inflammable and explosive hazardous environment, make under electromagnetism excitation The detection device can be realized the flammable explosive gas in qualitative and quantitative detection environment including hydrogen, can make to endanger A possibility that dangerous situation condition, reduces 15%；
Step 5, sensitive blocks assembling：
Silicon chip substrate is put into hollow structure shell, wafer sections downward, place towards small ventilating holes by sensitive thin film part, Metal wire connects interdigital electrode and data read module on silicon wafer.Since the manufacturing process of the sensitive blocks is very simple and convenient and Fast, a large amount of man power and material can be saved, the potentiality with large-scale industrial production.
Experiment test：
(1) hydrogen is tested：25 ± 2 DEG C of conditions each lead into the nitrogen of air, hydrogen and hydrogen, flow velocity 1000ml/ Min, load resistance are 200 Ω；When blowing air, gas sensor signal value is O；It is passed through 50ppm hydrogen, gas sensor signal Value changes to rapidly 10.0mV in 5s, and tends towards stability in signal value in 1min；Air is passed through after 5min, signal value is in 40s Inside return to 0 value and in tending towards stability in 1min；By 2000 stability tests, data variation rate is less than 10%.Test knot Fruit shows that the solid waste detection device has good response performance to hydrogen.
(2) ammonia is tested：25 ± 2 DEG C of conditions each lead into air ammonia and the nitrogen containing ammonia, flow velocity 1000ml/ Min, load resistance are 200 Ω；When blowing air, gas sensor signal value is O；It is passed through 500ppm ammonia, gas sensor letter Number value changes to rapidly 15.0mV in 2s, and tends towards stability in signal value in 1min；Be passed through air after 5min, signal value in 0 value is returned in 10s and in tending towards stability in 1.5min；By 2000 stability tests, data variation rate is less than 10%.It surveys Test result shows that the solid waste detection device has good response performance to ammonia.
(3) hydrogen sulfide is tested：25 ± 2 DEG C of conditions each lead into air and hydrogen sulfide containing nitrogen, flow velocity 1000ml/ Min, load resistance are 200 Ω；When blowing air, gas sensor signal value is O；It is passed through 1ppm ammonia, gas sensor signal Value changes to rapidly 20.0mV in 3s, and tends towards stability in signal value in 1min；Air is passed through after 5min, signal value is in 10s Inside return to 0 value and in tending towards stability in 1min；By 2000 stability tests, data variation rate is less than 10%.Test knot Fruit shows that the solid waste detection device has good response performance to hydrogen sulfide gas.
The experimental results showed that：The sensitive property of the sensitive blocks poisonous and hazardous gas also this to ammonia and hydrogen sulfide increases Strong 10% and selection performance improve 16%, obtain the detection device all to the susceptibility of toxic and harmful gas and selectivity It improves, reduces the risk of production.
Application scenarios 4
Fig. 1 is a kind of wind power generation blade auxiliary heating dress for power domain shown according to an exemplary embodiment It sets, which is characterized in that the air-heater 8 including being placed in 12 one end of web；The air-heater 8 is connected with the first heat pipes 9, Two heat pipes 13 and third heat pipes 14 and first heat pipes 9, second heat pipes 13, the third add Heat pipe part 14 is by being set to a hot wind machine baffle 15 of root of blade；First heat pipes 9, second heating tube Part 13, the third heat pipes 14 extend in blade from the air-heater 8；The blade edge is that hollow state forms leaf Piece cavity 16,16 are placed with detector 11 in the blade cavity.
A kind of wind power generation blade assisted heating device for power domain that the embodiment of the present invention provides, in blade It is placed with detector in cavity, solves the above problem.
Preferably, it is provided on the hot wind machine baffle 15 and first heat pipes 9, second heat pipes 13, the aperture that the third heat pipes 14 match.
Preferably, rear end 80cm~85cm of the front end of second heat pipes 13 apart from the web 12.
Preferably, rear end 83cm of the front end of second heat pipes 13 apart from the web 12.
Preferably, first heat pipes 9, second heat pipes 13, the third heat pipes 14 are along longitudinal direction Spaced set.
Preferably, first heat pipes 9, second heat pipes 13, the third heat pipes 14 are along longitudinal direction Apart from one another by 10cm.
Fig. 2 is the structural schematic diagram for the detector that the present invention shown according to an exemplary embodiment uses.Such as Fig. 2 Shown, the detector 11 includes sensitive blocks 10 and data read module 20, and the sensitive blocks 10 are placed on hollow Structure is in the shell of air hole.
The structural schematic diagram for the sensitive blocks that Fig. 3 present invention shown according to an exemplary embodiment uses, such as Fig. 3 institute Show, which includes silicon chip substrate, PANI film 4, Ni film 5, HKUST-1 film 6 and BSP film 7；The silicon chip substrate includes Silicon wafer 1, silicon nitride film 2 and Cr film layer 3, silicon nitride film 2 are used as insulating layer, and Cr film layer 3 is used as interdigital electrode layer；The Ni film 5 It is prepared using magnetron sputtering method, with a thickness of 20nm；The thickness of the HKUST-1 film 6 is about 40 μm；The Cr film layer 3 and data Read module 20 is conductively connected.
Fig. 4 is the preparation process flow block diagram for the sensitive blocks that the present invention shown according to an exemplary embodiment uses, As shown in figure 4, the production of the sensitive blocks 10 includes the following steps：
Step 1 prepares silicon chip substrate：
N-type silicon chip is taken, cut size is 5cm × 1cm, successively by acetone, ethyl alcohol, deionized water ultrasonic cleaning, ultrasound Time is 30min, is then dried up with nitrogen gun；The silicon wafer cleaned is put into PECVD device, deposits one layer of silicon nitride film, Thickness about 300nm；By Wafer Cleaning, one layer photoresist of spin coating, photoresist parameter is low speed 900rpm spin coating 13s, high speed 4500rpm spin coating 50s；Then interdigital electrode mask is covered, 7s is exposed, develop 65s；It is put into magnetic control sputtering device, magnetic control splashes Cr film is penetrated, as interdigital electrode layer, with a thickness of 600nm, then washes silicon chip surface photoresist；
Step 2 prepares microcavity：
The silicon chip substrate that will be handled through step 1, it is first with 75% ethanol solution that its surface wipes are clean, using flame plus Silicon chip substrate is placed on flame by thermal method, since one end, is drawn once at interval of 1cm, to form the microcavity of 2 cone cells；It is micro- Cavity configuration enhances the sensitivity of sensitive blocks, and then the detectability of the detection device is enhanced, and makes its suction to hydrogen It is attached very competent；
Step 3 prepares PANI film：
It takes a certain amount of polyaniline to be dissolved in dimethylformamide and forms saturated solution, will be satisfied using spin coating-czochralski method It is spun to the surface through the processed silicon chip substrate of step 2 with solution, the speed of spin coating is 3000rpm, then spin coating 10s exists It is dried overnight in 100 DEG C of baking oven, obtains PANI film on silicon chip substrate surface；
Step 4 prepares HKUST-1 film：
1) silicon chip substrate is put into magnetron sputtering, base vacuum is lower than 1.5 × 10-3The Ni film of Pa, magnetron sputtering 10nm 5, silicon chip extracting is stand-by；
2) H is weighed3BTC 0.336g is completely dissolved colorless and transparent molten in another small beaker with 19.2mL ethyl alcohol Liquid weighs Cu (NO3)2·3H2O 0.7g is in small beaker, with 19.2mL deionized water dissolving, by H3BTC solution is along walls of beaker Pour into Cu (NO3)2·3H2Half an hour is stirred in O solution, obtains HKUST-1 mother liquor azury；Prepared HKUST-1 is female Liquid and silicon chip substrate are placed in the reaction kettle of 50mL, synthesize MOF film using hydrothermal synthesis method, reaction temperature is 135 DEG C, reaction 2 After it, after being taken out silicon chip substrate with tweezers several times with methanol repeated flushing, dried 1 hour in 100 DEG C, in silicon chip substrate To the HKUST-1 film of blue, the thickness of HKUST-1 film is about 2~60 μm；Due to being used as metal-organic framework materials using Ni layers The Ni film of the catalyst of film forming, the surface PANI can be with HKUST-1 film reaction, and therefore, the rate of film build of one side HKUST-1 improves 30%, another aspect PANI film and the binding performance of HKUST-1 film improve 20%, make that film layer is combined to have stronger stabilization Property, so that the sensing performance for the type gas sense module being thus prepared is more stable；
Step 5 prepares BSP film：
1) BSP sub-micrometer rod is grown：In(NO3)3·x H2O (0.08g) and H3BTC (0.068g) is added to mixed solvent H2O/DMF(1:1,10mL) in, 10min is stirred at room temperature, solution A is made, by photochromic compounds BSP (0.057mmol) is added in solution A, and dark place is stirred 1 hour；
2) it forms a film：BSP solution is revolved and is formed a film on Tu silicon wafer/PANI/HKUST-1 film, the speed for revolving Tu is 5000rpm, rotation The Tu time is 5 seconds；Due to joined on its surface with fluorescence property in the preparation process for the gas sensitization module that it is used BSP photochromic molecule, which can issue fluorescence in there are inflammable and explosive hazardous environment, make under electromagnetism excitation The detection device can be realized the flammable explosive gas in qualitative and quantitative detection environment including hydrogen, can make to endanger A possibility that dangerous situation condition, reduces 35%；
Step 5, sensitive blocks assembling：
Silicon chip substrate is put into hollow structure shell, wafer sections downward, place towards small ventilating holes by sensitive thin film part, Metal wire connects interdigital electrode and data read module on silicon wafer.Since the manufacturing process of the sensitive blocks is very simple and convenient and Fast, a large amount of man power and material can be saved, the potentiality with large-scale industrial production.
Experiment test：
(1) hydrogen is tested：25 ± 2 DEG C of conditions each lead into the nitrogen of air, hydrogen and hydrogen, flow velocity 1000ml/ Min, load resistance are 200 Ω；When blowing air, gas sensor signal value is O；It is passed through 1 00ppm hydrogen, gas sensor letter Number value changes to rapidly 30.0mV in 3s, and tends towards stability in signal value in 20s；Air is passed through after 5min, signal value is in 20s Inside return to 0 value and in tending towards stability in 2min；By 2000 stability tests, data variation rate is less than 10%.Test knot Fruit shows that the solid waste detection device has good response performance to hydrogen.
(2) ammonia is tested：25 ± 2 DEG C of conditions each lead into air ammonia and the nitrogen containing ammonia, flow velocity 1000ml/ Min, load resistance are 200 Ω；When blowing air, gas sensor signal value is O；It is passed through 1000ppm ammonia, sensor signal value It changes to 10.0mV rapidly in 2s, and tends towards stability in signal value in 2min；Air is passed through after 5min, signal value is in 10s Return to 0 value and in tending towards stability in 2min；By 2000 stability tests, data variation rate is less than 10%.Test result Show that the solid waste detection device has good response performance to ammonia.
(3) hydrogen sulfide is tested：25 ± 2 DEG C of conditions each lead into air and hydrogen sulfide containing nitrogen, flow velocity 1000ml/ Min, load resistance are 200 Ω；When blowing air, gas sensor signal value is O；It is passed through 10ppm ammonia, sensor signal value exists 25.0mV is changed in 2s rapidly, and is tended towards stability in signal value in 2min；Air is passed through after 5min, signal value is in 40s times To 0 value and in tending towards stability in 2min；By 2000 stability tests, data variation rate is less than 10%.Test result is aobvious Show that the solid waste detection device has good response performance to hydrogen sulfide gas.
The experimental results showed that：The sensitive property of the sensitive blocks poisonous and hazardous gas also this to ammonia and hydrogen sulfide increases Strong 20% and selection performance improve 30%, obtain the detection device all to the susceptibility of toxic and harmful gas and selectivity It improves, reduces the risk of production.
Application scenarios 5
Fig. 1 is a kind of wind power generation blade auxiliary heating dress for power domain shown according to an exemplary embodiment It sets, which is characterized in that the air-heater 8 including being placed in 12 one end of web；The air-heater 8 is connected with the first heat pipes 9, Two heat pipes 13 and third heat pipes 14 and first heat pipes 9, second heat pipes 13, the third add Heat pipe part 14 is by being set to a hot wind machine baffle 15 of root of blade；First heat pipes 9, second heating tube Part 13, the third heat pipes 14 extend in blade from the air-heater 8；The blade edge is that hollow state forms leaf Piece cavity 16,16 are placed with detector 11 in the blade cavity.
A kind of wind power generation blade assisted heating device for power domain that the embodiment of the present invention provides, in blade It is placed with detector in cavity, solves the above problem.
Preferably, it is provided on the hot wind machine baffle 15 and first heat pipes 9, second heat pipes 13, the aperture that the third heat pipes 14 match.
Preferably, rear end 80cm~85cm of the front end of second heat pipes 13 apart from the web 12.
Preferably, rear end 83cm of the front end of second heat pipes 13 apart from the web 12.
Preferably, first heat pipes 9, second heat pipes 13, the third heat pipes 14 are along longitudinal direction Spaced set.
Preferably, first heat pipes 9, second heat pipes 13, the third heat pipes 14 are along longitudinal direction Apart from one another by 10cm.
Fig. 2 is the structural schematic diagram for the detector that the present invention shown according to an exemplary embodiment uses.Such as Fig. 2 Shown, the detector 11 includes sensitive blocks 10 and data read module 20, and the sensitive blocks 10 are placed on hollow Structure is in the shell of air hole.
The structural schematic diagram for the sensitive blocks that Fig. 3 present invention shown according to an exemplary embodiment uses, such as Fig. 3 institute Show, which includes silicon chip substrate, PANI film 4, Ni film 5, HKUST-1 film 6 and BSP film 7；The silicon chip substrate includes Silicon wafer 1, silicon nitride film 2 and Cr film layer 3, silicon nitride film 2 are used as insulating layer, and Cr film layer 3 is used as interdigital electrode layer；The Ni film 5 It is prepared using magnetron sputtering method, with a thickness of 30nm；The thickness of the HKUST-1 film 6 is about 60 μm；The Cr film layer 3 and data Read module 20 is conductively connected.
Fig. 4 is the preparation process flow block diagram for the sensitive blocks that the present invention shown according to an exemplary embodiment uses, As shown in figure 4, the production of the sensitive blocks 10 includes the following steps：
Step 1 prepares silicon chip substrate：
N-type silicon chip is taken, cut size is 5cm × 1cm, successively by acetone, ethyl alcohol, deionized water ultrasonic cleaning, ultrasound Time is 30min, is then dried up with nitrogen gun；The silicon wafer cleaned is put into PECVD device, deposits one layer of silicon nitride film, Thickness about 400nm；By Wafer Cleaning, one layer photoresist of spin coating, photoresist parameter is low speed 900rpm spin coating 13s, high speed 4500rpm spin coating 50s；Then interdigital electrode mask is covered, 7s is exposed, develop 65s；It is put into magnetic control sputtering device, magnetic control splashes Cr film is penetrated, as interdigital electrode layer, with a thickness of 700nm, then washes silicon chip surface photoresist；
Step 2 prepares microcavity：
The silicon chip substrate that will be handled through step 1, it is first with 75% ethanol solution that its surface wipes are clean, using flame plus Silicon chip substrate is placed on flame by thermal method, since one end, is drawn once at interval of 1cm, to form the microcavity of 2 cone cells；It is micro- Cavity configuration enhances the sensitivity of sensitive blocks, and then the detectability of the detection device is enhanced, and makes its suction to hydrogen It is attached very competent；
Step 3 prepares PANI film：
It takes a certain amount of polyaniline to be dissolved in dimethylformamide and forms saturated solution, will be satisfied using spin coating-czochralski method It is spun to the surface through the processed silicon chip substrate of step 2 with solution, the speed of spin coating is 3000rpm, then spin coating 10s exists It is dried overnight in 100 DEG C of baking oven, obtains PANI film on silicon chip substrate surface；
Step 4 prepares HKUST-1 film：
1) silicon chip substrate is put into magnetron sputtering, base vacuum is lower than 1.5 × 10-3The Ni film of Pa, magnetron sputtering 30nm 5, silicon chip extracting is stand-by；
2) H is weighed3BTC 0.336g is completely dissolved colorless and transparent molten in another small beaker with 19.2mL ethyl alcohol Liquid weighs Cu (NO3)2·3H2O 0.7g is in small beaker, with 19.2mL deionized water dissolving, by H3BTC solution is along walls of beaker Pour into Cu (NO3)2·3H2Half an hour is stirred in O solution, obtains HKUST-1 mother liquor azury；Prepared HKUST-1 is female Liquid and silicon chip substrate are placed in the reaction kettle of 50mL, synthesize MOF film using hydrothermal synthesis method, reaction temperature is 135 DEG C, reaction 2 After it, after being taken out silicon chip substrate with tweezers several times with methanol repeated flushing, dried 1 hour in 100 DEG C, in silicon chip substrate To the HKUST-1 film of blue, the thickness of HKUST-1 film is about 2~60 μm；Due to being used as metal-organic framework materials using Ni layers The Ni film of the catalyst of film forming, the surface PANI can be with HKUST-1 film reaction, and therefore, the rate of film build of one side HKUST-1 improves 30%, another aspect PANI film and the binding performance of HKUST-1 film improve 20%, make that film layer is combined to have stronger stabilization Property, so that the sensing performance for the type gas sense module being thus prepared is more stable；
Step 5 prepares BSP film：
1) BSP sub-micrometer rod is grown：In(NO3)3·x H2O (0.08g) and H3BTC (0.068g) is added to mixed solvent H2O/DMF(1:1,10mL) in, 10min is stirred at room temperature, solution A is made, by photochromic compounds BSP (0.057mmol) is added in solution A, and dark place is stirred 1 hour；
2) it forms a film：BSP solution is revolved and is formed a film on Tu silicon wafer/PANI/HKUST-1 film, the speed for revolving Tu is 5000rpm, rotation The Tu time is 5 seconds；Due to joined on its surface with fluorescence property in the preparation process for the gas sensitization module that it is used BSP photochromic molecule, which can issue fluorescence in there are inflammable and explosive hazardous environment, make under electromagnetism excitation The detection device can be realized the flammable explosive gas in qualitative and quantitative detection environment including hydrogen, can make to endanger A possibility that dangerous situation condition, reduces 50%；
Step 5, sensitive blocks assembling：
Silicon chip substrate is put into hollow structure shell, wafer sections downward, place towards small ventilating holes by sensitive thin film part, Metal wire connects interdigital electrode and data read module on silicon wafer.Since the manufacturing process of the sensitive blocks is very simple and convenient and Fast, a large amount of man power and material can be saved, the potentiality with large-scale industrial production.
Experiment test：
(1) hydrogen is tested：25 ± 2 DEG C of conditions each lead into the nitrogen of air, hydrogen and hydrogen, flow velocity 1000ml/ Min, load resistance are 200 Ω；When blowing air, gas sensor signal value is O；It is passed through 500ppm hydrogen, gas sensor letter Number value changes to rapidly 50.0mV in 2s, and tends towards stability in signal value in 2min；Be passed through air after 5min, signal value in 0 value is returned in 1min and in tending towards stability in 2min；By 2000 stability tests, data variation rate is less than 10%.It surveys Test result shows that the solid waste detection device has good response performance to hydrogen.
(2) ammonia is tested：25 ± 2 DEG C of conditions each lead into air ammonia and the nitrogen containing ammonia, flow velocity 1000ml/ Min, load resistance are 200 Ω；When blowing air, gas sensor signal value is O；It is passed through 2000ppm ammonia, gas passes through 2000 Secondary stability test, sensor signal value changes to rapidly 15.0mV in 1s, and tends towards stability in signal value in 2min；5min After be passed through air, signal value is in returning to 0 value and in tending towards stability in 5min in 20s；Its data variation rate is less than 10%.By 2000 stability tests, data variation rate is less than 10%.Test result shows the solid waste detection device to ammonia With good response performance.
(3) hydrogen sulfide is tested：25 ± 2 DEG C of conditions each lead into air and hydrogen sulfide containing nitrogen, flow velocity 1000ml/ Min, load resistance are 200 Ω；When blowing air, gas sensor signal value is O；It is passed through 100ppm ammonia, sensor signal value It changes to 30.0mV rapidly in 1s, and tends towards stability in signal value in 3min；Air is passed through after 5min, signal value is in 2min Return to 0 value and in tending towards stability in 5min；Its data variation rate is less than 10%.By 2000 stability tests, data become Rate is less than 10%.Test result shows that the solid waste detection device has good response performance to hydrogen sulfide gas.
The experimental results showed that：The sensitive property of the sensitive blocks poisonous and hazardous gas also this to ammonia and hydrogen sulfide increases It is strong by 40%, it selects performance to improve 50%, obtains the detection device all to the susceptibility of toxic and harmful gas and selectivity It improves, reduces the risk of production.
Connected applications scene 1 is to application scenarios 5, compared with prior art, the present invention having the advantage that：
1, a kind of wind power generation blade assisted heating device for power domain provided by the embodiment of the present invention, should The type gas sense module that equipment uses is due to being based on resistive type metal-organic framework materials, and metal-organic framework materials form a film In on polyaniline film, since polyaniline has strong electric conductivity, further enhance the sensitive of type gas sense module Degree, and then reinforce the detection device significantly the sensitivity of gas.Further, since being used as metal using Ni layers Therefore on the one hand the catalyst of organic framework material film forming, the Ni film on the surface PANI can be promoted with HKUST-1 film reaction On the other hand the film forming of HKUST-1 improves the binding performance of PANI film Yu HKUST-1 film, make to combine film layer with stronger Stability, so that the sensing performance for the type gas sense module being thus prepared is more stable.
2, a kind of wind power generation blade assisted heating device for power domain provided by the embodiment of the present invention, by In the preparation process for the gas sensitization module that Yu Qi is used, the BSP photochromic molecule with fluorescence property joined on its surface, The photochromic molecule can issue fluorescence in there are inflammable and explosive hazardous environment, enable the detection device under electromagnetism excitation Realize the flammable explosive gas in qualitative and quantitative detection environment including hydrogen, can make to cause danger situation a possibility that It reduces.
3, a kind of wind power generation blade assisted heating device for power domain provided by the embodiment of the present invention, makes Use polyaniline as substrate liquid spin coating silicon chip substrate, during the preparation process due to making silicon chip substrate that the knot of similar microcavity be made Structure, and joined the material including BSP, micro-cavity structure enhance the sensitivity of sensitive blocks, and then the detection device Detectability is enhanced, and keeps it extremely strong to the adsorption capacity of hydrogen；In addition, the sensitive blocks are also this to ammonia and hydrogen sulfide Poisonous and hazardous gas has very strong sensitive and selection performance, makes susceptibility and choosing of the detection device to toxic and harmful gas Selecting property is all improved, and reduces the risk of production；Finally, due to which the manufacturing process of the sensitive blocks is very simple and convenient and fast Victory can save a large amount of man power and material, and the potentiality with large-scale industrial production, therefore, embodiments herein is provided A kind of wind power generation blade assisted heating device for power domain have great promotional value.
Finally it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than the present invention is protected The limitation of range is protected, although explaining in detail referring to preferred embodiment to the present invention, those skilled in the art are answered Work as understanding, it can be with modification or equivalent replacement of the technical solution of the present invention are made, without departing from the reality of technical solution of the present invention Matter and range.

Claims (6)

1. a kind of wind power generation blade assisted heating device for power domain, which is characterized in that including being placed in web one The air-heater at end；The air-heater is connected with the first heat pipes, the second heat pipes and third heat pipes and described first Heat pipes, second heat pipes, the third heat pipes are by being set to a hot wind machine baffle of root of blade； First heat pipes, second heat pipes, the third heat pipes extend in blade from the air-heater；Institute Stating blade edge is that hollow state forms blade cavity, is placed with detector in the blade cavity；
The detector includes sensitive blocks and data read module, and the sensitive blocks are placed on hollow structure with saturating In the shell of stomata；
The sensitive blocks include silicon chip substrate, PANI film, Ni film, HKUST-1 film and BSP film；The silicon chip substrate includes silicon Piece, silicon nitride film and Cr film layer, silicon nitride film are used as insulating layer, and Cr film layer is used as interdigital electrode layer；The Ni film uses magnetic control Sputtering method preparation, with a thickness of 10nm；The HKUST-1 film with a thickness of 2~60 μm；The Cr film layer is led with data read module Electrical connection；
The production of the sensitive blocks includes the following steps：
Step 1 prepares silicon chip substrate：
N-type silicon chip is taken, cut size is 5cm × 1cm, successively by acetone, ethyl alcohol, deionized water ultrasonic cleaning, ultrasonic time For 30min, then dried up with nitrogen gun；The silicon wafer cleaned is put into PECVD device, deposits one layer of silicon nitride film, thickness 200nm；By Wafer Cleaning, one layer photoresist of spin coating, photoresist parameter is low speed 900rpm spin coating 13s, high speed 4500rpm spin coating 50s；Then interdigital electrode mask is covered, 7s is exposed, develop 65s；It is put into magnetic control sputtering device, magnetron sputtering C r film, as Interdigital electrode layer then washes silicon chip surface photoresist with a thickness of 500nm；
Step 2 prepares microcavity：
The silicon chip substrate that will be handled through step 1, it is first with 75% ethanol solution that its surface wipes are clean, using flame heating, Silicon chip substrate is placed on flame, since one end, is drawn once at interval of 1cm, to form the microcavity of 2 cone cells；Microcavity knot Structure enhances the sensitivity of sensitive blocks, and then the detectability of the detection device is enhanced, and makes its adsorption energy to hydrogen Power is extremely strong；
Step 3 prepares PANI film：
It takes a certain amount of polyaniline to be dissolved in dimethylformamide and forms saturated solution, will be saturated using spin coating-czochralski method molten Liquid is spun to the surface through the processed silicon chip substrate of step 2, and the speed of spin coating is 3000rpm, spin coating 10s, then 100 DEG C baking oven in be dried overnight, obtain PANI film on silicon chip substrate surface；The type gas sense module of use is due to being based on resistor-type Metal-organic framework materials, and metal-organic framework materials film forming is on polyaniline film, since polyaniline has strong lead Electrically, therefore, the sensitivity of type gas sense module is further enhanced, and then obtain the detection device to the sensitivity of gas To significantly reinforcing；
Step 4 prepares HKUST-1 film：
1) silicon chip substrate is put into magnetron sputtering, base vacuum is lower than 1.5 × 10-3Pa, the Ni film 5 of magnetron sputtering 10nm, silicon Piece takes out stand-by；
2) H3BTC 0.336g is weighed in another small beaker, is completely dissolved to obtain colourless transparent solution with 19.2mL ethyl alcohol, is claimed It takes Cu (NO3) 23H2O 0.7g in small beaker, with 19.2mL deionized water dissolving, H3BTC solution is poured into along walls of beaker Half an hour is stirred in Cu (NO3) 23H2O solution, obtains HKUST-1 mother liquor azury；By prepared HKUST-1 mother liquor It is placed in the reaction kettle of 50mL with silicon chip substrate, synthesizes MOF film using hydrothermal synthesis method, reaction temperature is 135 DEG C, is reacted 2 days Afterwards, it after being taken out silicon chip substrate with tweezers several times with methanol repeated flushing, dries 1 hour in 100 DEG C, is obtained in silicon chip substrate Blue HKUST-1 film, HKUST-1 film with a thickness of 2~60 μm；Due to being formed a film using Ni layers as metal-organic framework materials Catalyst, therefore on the one hand the Ni film on the surface PANI can promote the film forming of HKUST-1 with HKUST-1 film reaction, another Aspect improves the binding performance of PANI film Yu HKUST-1 film, makes that film layer is combined to have stronger stability, so that thus The sensing performance for the type gas sense module being prepared is more stable；
Step 5 prepares BSP film：
1) BSP sub-micrometer rod is grown：In (NO3) 3x H2O (0.08g) and H3BTC (0.068g) are added to mixed solvent H2O/ DMF(1:1,10mL) in, 10min is stirred at room temperature, solution A is made, photochromic compounds BSP (0.057mmol) is added Enter into solution A, dark place is stirred 1 hour；
2) it forms a film：BSP solution is revolved and is formed a film on Tu silicon wafer/PANI/HKUST-1 film, the speed for revolving Tu is 5000rpm, when revolving Tu Between be 5 seconds；Due to joined on its surface with fluorescence property in the preparation process for the gas sensitization module that it is used BSP photochromic molecule, the photochromic molecule can issue fluorescence in there are inflammable and explosive hazardous environment, make this under electromagnetism excitation Detection device can be realized the flammable explosive gas in qualitative and quantitative detection environment including hydrogen, can make to cause danger A possibility that situation, reduces；
Step 5, sensitive blocks assembling：
Silicon chip substrate is put into hollow structure shell, wafer sections downward, place towards small ventilating holes, metal by sensitive thin film part Line connects interdigital electrode and data read module on silicon wafer.
2. a kind of wind power generation blade assisted heating device for power domain according to claim 1, feature exist In being provided on the hot wind machine baffle and first heat pipes, second heat pipes, the third heat pipes The aperture to match.
3. a kind of wind power generation blade assisted heating device for power domain according to claim 1, feature exist In rear end 80cm~85cm of the front end of second heat pipes apart from the web.
4. a kind of wind power generation blade assisted heating device for power domain according to claim 1, feature exist In rear end 83cm of the front end of second heat pipes apart from the web.
5. a kind of wind power generation blade assisted heating device for power domain according to claim 1, feature exist In first heat pipes, second heat pipes, the third heat pipes spaced set along longitudinal direction.
6. a kind of wind power generation blade assisted heating device for power domain according to claim 1, feature exist In first heat pipes, second heat pipes, the third heat pipes are along longitudinal direction apart from one another by 10cm.
CN201610589131.7A 2016-07-25 2016-07-25 A kind of wind power generation blade assisted heating device for power domain Expired - Fee Related CN106014854B (en)

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CN201367977Y (en) * 2009-01-12 2009-12-23 中航惠腾风电设备股份有限公司 Icing prevention wind wheel vane of wind generating set
CN102884311A (en) * 2010-02-16 2013-01-16 技术研究及发展基金有限公司 Flow control on a vertical axis wind turbine (VAWT)
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