CN106159674A - 一种激光器的制备方法 - Google Patents

一种激光器的制备方法 Download PDF

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CN106159674A
CN106159674A CN201610534227.3A CN201610534227A CN106159674A CN 106159674 A CN106159674 A CN 106159674A CN 201610534227 A CN201610534227 A CN 201610534227A CN 106159674 A CN106159674 A CN 106159674A
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ohmic contact
layer
shaped
contact layer
prepare
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郭经纬
武晓琴
刘妍
徐朝鹏
王海燕
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Yanshan University
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Yanshan University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Led Devices (AREA)
  • Weting (AREA)

Abstract

一种激光器的制备方法，所述方法包括如下步骤：a、将衬底表面处理干净；b、在清洁的衬底表面利用干法刻蚀或湿法刻蚀工艺制备锥状n型欧姆接触层；c、在n型欧姆接触层表面制备n型限制层；d、在n型限制层表面制备本征层；e、在本征层表面制备p型限制层；f、在p型限制层表面制备p型欧姆接触层。本发明发光面积大、发光角度可调、效率高。

Description

一种激光器的制备方法
技术领域
本发明涉及激光器技术领域，具体而言，涉及一种球状激光器的制备方法。
背景技术
半导体激光器又称激光二极管，具有体积小、重量轻、可靠性高、使用寿命长等优点，在很多领域都有广泛的应用。但传统的半导体激光器采用器件与衬底相互平行的结构。它的不足之处：发光面积小、发光角度不可调、效率低。
发明内容
本发明的目的是提供一种发光面积大、发光角度可调、效率高的激光器的制备方法。
本发明提供一种新结构的激光器，所述方法包括如下步骤：
a、将衬底表面处理干净；
b、在清洁的衬底表面利用干法刻蚀或湿法刻蚀工艺制备球状n型欧姆接触层；
c、在n型欧姆接触层表面制备n型限制层；
d、在n型限制层表面制备本征层；
e、在本征层表面制备p型限制层；
f、在p型限制层表面制备p型欧姆接触层。
衬底材料选自III-V族半导体材料或IV族半导体材料。
衬底材料选自硅(Si)、锗(Ge)、碳(C)、碳化硅(SiC)、砷化镓(GaAs)、氮化镓(GaN)、砷化铟(InAs)或磷化铟(InP)。
n型欧姆接触层可以是圆球状或椭球状。
n型欧姆接触层、n型限制层、本征层、p型限制层、p型欧姆接触层的厚度均大于10纳米且小于10微米。
n型欧姆接触层、n型限制层、本征层、p型限制层、p型欧姆接触层选自III-V族半导体材料或IV族半导体材料。
n型欧姆接触层、n型限制层、本征层、p型限制层、p型欧姆接触层选自锗(Ge)、砷化镓(GaAs)、氮化镓(GaN)、砷化铟(InAs)、磷化铟(InP)、铝镓砷(AlxGa1-xAs)、铟镓砷(InxGa1- xAs)或铟镓砷磷(InxGa1-xAsyP1-y)，其中0<x<1，0<y<1。
与现有技术相比，本发明具有如下优点：具有发光面积大、发光角度可调、效率高。
附图说明：
图1清洁衬底示意图
图2清洁的衬底表面制备球状n型欧姆接触层示意图；
图3在n型欧姆接触层表面制备n型限制层示意图；
图4在n型限制层表面制备本征层示意图；
图5在本征层表面制备p型限制层示意图；
图6在p型限制层表面制备p型欧姆接触层示意图；
图7为各层示意图。
其中：1-衬底，2-n型欧姆接触层，3-n型限制层，4-本征层，5-p型限制层，6-p型欧姆接触层。
具体实施方式：
实施例1：
基于InP衬底的InP同质结圆球状激光器的制备，具体步骤如下所述。
a、将InP衬底表面处理干净；
b、在清洁的InP衬底表面利用干法刻蚀工艺制备圆球状n型InP欧姆接触层；
c、在n型InP欧姆接触层表面制备n型InP限制层；
d、在n型InP限制层表面制备InP本征层；
e、在InP本征层表面制备p型InP限制层；
f、在p型InP限制层表面制备p型InP欧姆接触层。
实施例2：
基于InP衬底的异质结圆球状激光器的制备，具体步骤如下所述。
a、将InP衬底表面处理干净；
b、在清洁的InP衬底表面利用湿法刻蚀工艺制备圆球状n型InP欧姆接触层；
c、在n型InP欧姆接触层表面制备n型InP限制层；
d、在n型InP限制层表面制备Al0.4Ga0.6In0.3As0.7本征层；
e、在Al0.4Ga0.6In0.3As0.7本征层表面制备p型In0.73Ga0.27As0.58P0.42限制层；
f、在p型In0.73Ga0.27As0.58P0.42限制层表面制备p型InP欧姆接触层。
实施例3：
基于GaAs衬底的同质结椭球状激光器的制备，具体步骤如下所述。
a、将GaAs衬底表面处理干净；
b、在清洁的GaAs衬底表面利用湿法刻蚀工艺制备椭球状n型GaAs欧姆接触层；
c、在n型GaAs欧姆接触层表面制备n型GaAs限制层；
d、在n型GaAs限制层表面制备GaAs本征层；
e、在GaAs本征层表面制备p型GaAs限制层；
f、在p型GaAs限制层表面制备p型GaAs欧姆接触层。
实施例4：
基于Si衬底的异质结椭球状激光器的制备，具体步骤如下所述。
a、将Si衬底表面处理干净；
b、在清洁的Si衬底表面利用湿法刻蚀工艺制备椭球状n型GaAs欧姆接触层；
c、在n型GaAs欧姆接触层表面制备n型GaAs限制层；
d、在n型GaAs限制层表面制备Al0.5Ga0.5As本征层；
e、在Al0.5Ga0.5As本征层表面制备p型GaAs限制层；
f、在p型GaAs限制层表面制备p型GaAs欧姆接触层。

Claims (8)

1.一种激光器的制备方法，其特征在于：包括如下步骤：
a、在清洁的衬底表面制备球状n型欧姆接触层；
b、在n型欧姆接触层表面制备n型限制层；
c、在n型限制层表面制备本征层；
d、在本征层表面制备p型限制层；
e、在p型限制层表面制备p型欧姆接触层。
2.根据权利要求1所述的一种激光器的制备方法，其特征在于：衬底材料选自III-V族半导体材料或IV族半导体材料。
3.根据权利要求2所述的一种激光器的制备方法，其特征在于：衬底材料选自硅(Si)、锗(Ge)、碳(C)、碳化硅(SiC)、砷化镓(GaAs)、氮化镓(GaN)、砷化铟(InAs)或磷化铟(InP)。
4.根据权利要求1所述的一种激光器的制备方法，其特征在于：球状n型欧姆接触层是圆球或椭球。
5.根据权利要求1所述的一种激光器的制备方法，其特征在于：球状n型欧姆接触层用干法刻蚀工艺制备或用湿法刻蚀工艺制备。
6.根据权利要求1所述的一种激光器的制备方法，其特征在于：n型欧姆接触层、n型限制层、本征层、p型限制层、p型欧姆接触层的厚度均大于10纳米且小于10微米。
7.根据权利要求1所述的一种激光器的制备方法，其特征在于：n型欧姆接触层材料、n型限制层材料、本征层材料、p型限制层材料、p型欧姆接触层材料均选自III-V族半导体材料或IV族半导体材料。
8.根据权利要求7所述的一种激光器的制备方法，其特征在于：n型欧姆接触层材料、n型限制层材料、本征层材料、p型限制层材料、p型欧姆接触层材料均选自锗(Ge)、砷化镓(GaAs)、氮化镓(GaN)、砷化铟(InAs)、磷化铟(InP)、铝镓砷(AlxGa1-xAs)、铟镓砷(InxGa1-xAs)或铟镓砷磷(InxGa1-xAsyP1-y)，其中0<x<1，0<y<1。
CN201610534227.3A 2016-07-08 2016-07-08 一种激光器的制备方法 Pending CN106159674A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111628394A (zh) * 2020-06-12 2020-09-04 燕山大学 一种回音壁模式有机异形谐振腔及其制备方法和应用

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US5253262A (en) * 1990-10-31 1993-10-12 Kabushiki Kaisha Toshiba Semiconductor laser device with multi-directional reflector arranged therein
US20050069012A1 (en) * 2003-09-26 2005-03-31 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060227842A1 (en) * 2005-04-11 2006-10-12 Ronald Lacomb Scalable spherical laser
US20090039370A1 (en) * 2007-08-09 2009-02-12 Sang Hoon Han Semiconductor light emitting device
US20100047944A1 (en) * 2008-08-25 2010-02-25 Samsung Electronics Co., Ltd. Light-emitting element with improved light extraction efficiency, light-emitting device including the same, and methods of fabricating light-emitting element and light-emitting device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4829537A (en) * 1986-12-01 1989-05-09 Spectra-Physics, Inc. Solid state lasers with spherical resonators
US5253262A (en) * 1990-10-31 1993-10-12 Kabushiki Kaisha Toshiba Semiconductor laser device with multi-directional reflector arranged therein
US20050069012A1 (en) * 2003-09-26 2005-03-31 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060227842A1 (en) * 2005-04-11 2006-10-12 Ronald Lacomb Scalable spherical laser
US20090039370A1 (en) * 2007-08-09 2009-02-12 Sang Hoon Han Semiconductor light emitting device
US20100047944A1 (en) * 2008-08-25 2010-02-25 Samsung Electronics Co., Ltd. Light-emitting element with improved light extraction efficiency, light-emitting device including the same, and methods of fabricating light-emitting element and light-emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111628394A (zh) * 2020-06-12 2020-09-04 燕山大学 一种回音壁模式有机异形谐振腔及其制备方法和应用
CN111628394B (zh) * 2020-06-12 2021-08-03 燕山大学 一种回音壁模式有机异形谐振腔及其制备方法和应用

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Application publication date: 20161123