CN106159091B - Organic single crystal thin film transistor and preparation method thereof - Google Patents
Organic single crystal thin film transistor and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of organic single crystal thin film transistors, including gate electrode, the insulating layer successively formed in substrate；Interval is formed in source electrode, the drain electrode of surface of insulating layer；It is formed in the decorative layer of surface of insulating layer and is formed in modification layer surface and the active layer between source electrode, drain electrode, wherein the material of active layer is the consistent organic single crystal thin film of crystal orientation.The invention also discloses preparation method, comprising steps of A, successively preparing grid, insulating layer in substrate, and it is arranged at intervals at the source electrode of surface of insulating layer, drain electrode；B, decorative layer is prepared in surface of insulating layer；C, an organic single crystal thin film is formed as active layer in modification layer surface using solwution method；Wherein, active layer is the organic single crystal thin film formed by being orientated consistent organic single-crystal.Organic single crystal thin film transistor according to the present invention not only contributes to the transmission of carrier, improves transistor performance, additionally it is possible to realize the quick preparation of large area.
Description
Technical field
The invention belongs to organic electronic device technical fields, in particular, be related to a kind of organic single crystal thin film transistor and
Preparation method.
Background technique
Organic Thin Film Transistors (Organic Thin Film Transistors, OTFTs) is large-area displays, flexibility
One of the core component of electronics, sensor etc. and organic semi-conductor important research content.The series of characteristics that it has is such as
Material source is wide, operating voltage is low, be suitble to temperature production and product it is light, it is thin, inexpensive, can and material compatible with flexible substrate can
Solutionization processing with realize the roll-to-roll large area of electronic device, low cost manufacturing and paid close attention to by industrial circle, have huge
Application prospect.
Organic transistor mainly includes active layer, insulating layer and electrode, and the key that wherein prepared by Organic Thin Film Transistors is
The formation of organic semiconductor layer, the performance of device depend primarily on the structure and pattern of organic semiconductor thin-film.The wherein degree of orientation
Good molecular structure can make the pi bond of organic conjugated molecule obtain maximum overlapping in source, electric leakage extreme direction, to improve
The transmission of carrier.Therefore, the organic film for preparing favorable orientation has critical work to the improvement of transistor device performance
With.Currently, vacuum coating is to prepare one of most commonly used method of organic film.However, vacuum evaporation technology instrument and equipment is multiple
Miscellaneous, the mean roughness of higher cost, resulting film is larger, and film majority is polycrystalline or unbodied, this makes its device
Performance is poor.
In order to overcome the shortcomings of vacuum coating, solwution method is come into being, in order to realize that low cost, preparation are convenient and production is big
The organic electronic device of area, it is considered as preparing the technology of OFET most development potentiality that solution, which handles film technique,.It is organic
Monocrystal thin films have the advantages that regular appearance, the degree of orientation are good, are very helpful to transistor performance is improved.Thus, use solution
Organic single crystal thin film that method grows large area, that the degree of orientation is good is most important to the development of organic transistor.
Summary of the invention
To solve the above-mentioned problems of the prior art, the present invention provides a kind of organic single crystal thin film transistor and its systems
The active layer of Preparation Method, the organic single crystal thin film transistor is made of the good organic single crystal thin film of regular appearance, the degree of orientation, favorably
In the transmission of carrier, transistor performance is helped to improve.
In order to achieve the above object of the invention, present invention employs the following technical solutions:
A kind of organic single crystal thin film transistor, including substrate；And it is successively stacked on the grid in the substrate from top to bottom
Electrode, insulating layer；Interval is formed in source electrode, the drain electrode of the surface of insulating layer；Further include: decorative layer is formed in described
Surface of insulating layer；Active layer is formed in the modification layer surface, and between the source electrode, drain electrode；The active layer
Material be the consistent organic single crystal thin film of crystal orientation.
Further, the raw material of the organic single crystal thin film is conjugation polycyclic aromatic compounds.
Further, the conjugation polycyclic aromatic compounds are selected from 2,8- octyl dioxa anthanthrene, 5,11- octyl dioxy
Miscellaneous anthanthrene, 1,7- dioctyl dioxa anthanthrene, any one in 1,7- bis- (4- hexyl phenyl) dioxa anthanthrene.
Further, the material of the insulating layer is selected from silica, aluminum oxide, silicon nitride, organic insulating material
In any one.
Further, the raw material for being used to prepare the decorative layer is silane.
Further, the silane is selected from phenyl trichlorosilane, octadecyl trichlorosilane alkane, 3- aminopropyl triethoxy
Silane, hexamethyldisilazane, any one in fluorine-containing alkyltrichlorosilanes.
Another object of the present invention, which also resides in, provides a kind of preparation method of organic single crystal thin film transistor as described above,
Comprising steps of A, successively preparing grid, insulating layer in substrate, and it is arranged at intervals at the source electrode of the surface of insulating layer, leakage
Electrode；B, decorative layer is prepared in the surface of insulating layer；C, an organic single-crystal is formed in the modification layer surface using solwution method
Film is as active layer.
Further, the active layer is prepared using pulling film forming method, preparation method specifically: by organic list
The raw material of brilliant film is dissolved in organic solvent, forms the pulling film forming solution that concentration is 1mg/mL~6mg/mL；Wherein, described to have
Any one of solvent in chloroform, toluene, tetrahydrofuran；The surface of the decorative layer of the step B is enabled to hang down
It is directly submerged into the pulling film forming solution in the liquid level of the pulling film forming solution, then along fixed direction with 25 μm/s
The pull rate of~500 μm/s slowly proposes；In 80 DEG C or less vacuum annealing 10min~60min, obtain with a thickness of 20nm~
The organic single crystal thin film of 60nm.
Further, the active layer is prepared using casting membrane formation process, preparation method specifically: by organic list
The raw material of brilliant film is dissolved in organic solvent, forms the casting film forming solution that concentration is 0.5mg/mL~1mg/mL；Wherein, described
Any one of organic solvent in chloroform, toluene, o-dichlorohenzene；After casting film forming solution filtering, drop coating in
On the decorative layer；Solvent anneal 10min~30min is obtained in the modification layer surface with a thickness of the organic of 20nm~60nm
Monocrystal thin films；Wherein, the solvent that the solvent anneal uses is any one in methylene chloride, chloroform, tetrahydrofuran
Kind.
Further, the raw material of the organic single crystal thin film is conjugation polycyclic aromatic compounds.
Further, the conjugation polycyclic aromatic compounds are selected from 2,8- octyl dioxa anthanthrene, 5,11- octyl dioxy
Miscellaneous anthanthrene, 1,7- dioctyl dioxa anthanthrene, any one in 1,7- bis- (4- hexyl phenyl) dioxa anthanthrene.
Further, the raw material of the decorative layer is silane.
Further, the silane is selected from phenyl trichlorosilane, octadecyl trichlorosilane alkane, 3- aminopropyl triethoxy
Silane, hexamethyldisilazane, any one in fluorine-containing alkyltrichlorosilanes.
The present invention by surface of insulating layer silane coating as decorative layer, using silane with prepare dissolving in for active layer
Active force can be generated between the conjugation polycyclic aromatic compounds of organic solvent, promotes to be conjugated polycyclic aromatic compounds in pulling film forming
Method is poured the organic single-crystal that specific orientation is formed in the operating process of membrane formation process, so that it is consistent that orientation has finally been prepared
Organic single crystal thin film is as active layer.It is prepared using the good organic single crystal thin film of regular appearance, the degree of orientation as active layer organic
Thin film transistor (TFT) is conducive to the transmission of carrier, helps to improve transistor performance.The preparation method not only has can solution
Change preparation, flexible and high mobility characteristic, while can be realized the quick preparation of large area, thus is processed, greatly in solvable liquefaction
Area, low cost Organic Thin Film Transistors preparation in have important practical value.
Detailed description of the invention
What is carried out in conjunction with the accompanying drawings is described below, above and other aspect, features and advantages of the embodiment of the present invention
It will become clearer, in attached drawing:
Fig. 1 is the structural schematic diagram of the organic single crystal thin film transistor of embodiment according to the present invention 1；
Fig. 2 is the step flow chart of the preparation method of the organic single crystal thin film transistor of embodiment according to the present invention 1；
Fig. 3 is the optical microscope of the organic single crystal thin film transistor of embodiment according to the present invention 1；
Fig. 4 is the optical microscope of the organic single crystal thin film transistor of embodiment according to the present invention 2；
Fig. 5 is the transfer curve figure of the organic single crystal thin film transistor of embodiment according to the present invention 2；
Fig. 6 is the output curve diagram of the organic single crystal thin film transistor of embodiment according to the present invention 2；
Fig. 7 is the optical microscope of the organic single crystal thin film transistor of embodiment according to the present invention 3；
Fig. 8 is the optical microscope of the organic single crystal thin film transistor of embodiment according to the present invention 4；
Fig. 9 is the optical microscope of the organic single crystal thin film transistor of embodiment according to the present invention 6；
Figure 10 is the optical microscope of the organic single crystal thin film transistor of embodiment according to the present invention 7；
Figure 11 is the optical microscope of the organic single crystal thin film transistor of embodiment according to the present invention 8.
Specific embodiment
Hereinafter, with reference to the accompanying drawings to detailed description of the present invention embodiment.However, it is possible to come in many different forms real
The present invention is applied, and the present invention should not be construed as limited to the specific embodiment illustrated here.On the contrary, providing these implementations
Example is in order to explain the principle of the present invention and its practical application, to make others skilled in the art it will be appreciated that the present invention
Various embodiments and be suitable for the various modifications of specific intended application.In the accompanying drawings, for the sake of clarity, element can be exaggerated
Shape and size, and identical label will be used to indicate the same or similar element always.
Embodiment 1
The structure of the organic single crystal thin film transistor of the present embodiment as shown in Figure 1, in the organic single crystal thin film transistor,
Include:
It is formed in the grid 120 on 110 surface of a substrate；
It is formed in the insulating layer 130 on 120 surface of grid；
Interval is formed in the source electrode 141 and drain electrode 142 on 130 surface of insulating layer；
Around the source electrode 141, drain electrode 142 and the decorative layer 150 for being formed in 130 surface of insulating layer；And
It is set to 150 surface of decorative layer and the active layer 160 between source electrode 141 and drain electrode 142,
In, the material of the active layer 160 is the consistent organic single crystal thin film of crystal orientation.
The preparation method of the organic single crystal thin film transistor is described in detail below with reference to accompanying drawings.
Fig. 2 is the step flow chart of the preparation method of the organic single crystal thin film transistor of embodiment according to the present invention 1.
Referring to Fig. 2, the preparation method of the organic single crystal thin film transistor of embodiment according to the present invention 1 includes following step
It is rapid:
In step 110, shown in referring to Fig.1, gate electrode, insulating layer are successively prepared in substrate, and be intervally arranged exhausted
The source electrode on edge layer surface, drain electrode obtain head product.
Specifically, gate electrode and insulating layer are prepared on the glass substrate first, i.e., using gate electrode as silicon wafer, insulating layer is made a living
Grow the silica of the 300nm thickness on the silicon wafer；Then source electrode, leakage are prepared in silica surface by photoetching process
The photoetching offset plate figure of electrode；Again 5 × 10-4Under the pressure of Pa, withRate by electron beam evaporation in silica
The golden metallic film that one layer of 30nm thickness is deposited on surface removes unwanted photoresist and metal finally by metal lift-off material
Film forms patterned golden source electrode, drain electrode.
In the step 120, acetone, isopropanol, water is successively used to be cleaned by ultrasonic the head product that step 110 is prepared, so
After dry.
In step 130, the head product after step 120 cleaning is dipped to the phenyl three containing toluene 10% (volume fraction)
In chlorosilane solution, silica surface is modified, obtains decorative layer.
Specifically, soaking time control is 12h or so, successively with toluene, ethyl alcohol and is gone after the sample impregnated is taken out
Ion water washing can be in silica after drying to remove extra organic molecule (predominantly toluene and phenyl trichlorosilane)
Surface obtains one layer of fine and close organic supramolecular layer film, as the decorative layer in this organic single crystal thin film transistor.
In the description of above-mentioned steps 110-130, about gate electrode, insulating layer, decorative layer and source electrode, drain electrode
Preparation method, equal category those skilled in the art's customary means and routine operation, if substrate is not limited only to glass, other are such as silicon
Piece, polymer etc.；The material of insulating layer is also not necessarily limited to silica, other are such as aluminum oxide, silicon nitride, organic insulation
Material etc.；It no longer repeats one by one herein.
Wherein, the raw material of decorative layer is silane, generates leading for crystal orientation for the organic single-crystal material to subsequent step
To effect, the silane with the effect can also be, for example, octadecyl trichlorosilane alkane, 3-aminopropyltriethoxysilane, six
The silane such as methyl disilazane, fluorine-containing alkyltrichlorosilanes.
In step 140, it is organic that one is formed between modification layer surface and source electrode and drain electrode by pulling film forming method
Monocrystal thin films are as active layer.
Specifically, first with chloroform (i.e. chloroform) for solvent, compound concentration is 1, the 7- dioctyl dioxy of 1mg/mL
The solution of miscellaneous anthanthrene, as pulling film forming solution；Then the pulling film forming solution is placed on level table, and will be through step
130 cleaning after sample immersed in the pulling film forming solution according to the direction perpendicular to pulling film forming liquid level of solution, make lifting at
Film liquid gradually sticks modification layer surface, 5min is stood, so that 1,7- dioctyl dioxa anthanthrene molecule is in phenyl trichlorosilane
Under the action of, gradually form the consistent crystal state of orientation.It is slowly mentioned again to more than liquid level with the pull rate of 25 μm/s.
Finally allow the sample for being stained with pulling film forming solution at 80 DEG C vacuum annealing 20min to get to being formed in described repair
The organic single crystal thin film for adoring layer surface, using the active layer as this organic single crystal thin film transistor.
In the organic single crystal thin film transistor, with 1,7- dioctyl dioxa anthanthrene as the material for preparing active layer
Material dissolves in organic solvent this characteristic first with it and is configured to pulling film forming solution, then using the lifting in solwution method
Membrane formation process has been prepared regular appearance and the consistent organic single crystal thin film of orientation, the organic single crystal thin film with a thickness of 30nm
Left and right, as shown in figure 3, its transmission that can be conducive to carrier, helps to improve transistor performance.At the same time, the preparation side
Method not only has solvable liquefaction preparation, flexible and high mobility feature, additionally it is possible to realize the quick preparation of large area.
Embodiment 2
In the description of embodiment 2, details are not described herein with the something in common of embodiment 1, only describes with embodiment not
Same place.Embodiment 2 difference from example 1 is that, it is in step 140, dense with 1,7- dioctyl dioxa anthanthrene
The chloroform soln that degree is 1mg/mL is used as pulling film forming solution, by through step 130 clean obtained sample according to perpendicular to
The direction of pulling film forming liquid level of solution is immersed, and pulling film forming liquid is made gradually to stick modification layer surface, after standing 5min, with
The pull rate of 150 μm/s is slowly mentioned to more than liquid level, and the vacuum annealing 60min at 60 DEG C, obtains organic single crystal thin film, should
Organic single crystal thin film with a thickness of 20nm or so, using the active layer as this organic single crystal thin film transistor.
The optical microscope picture for the organic single crystal thin film transistor that the present embodiment is prepared is as shown in Figure 4.
At the same time, it in order to verify the performance of the organic single crystal thin film transistor being prepared through the preparation method, uses
Probe station is tested, and transfer curve and the curve of output difference of test result are as shown in Figure 5 and Figure 6, according to Fig. 5 and Fig. 6
In middle numerical value calculate it is found that the switching current ratio of the organic single crystal thin film transistor is 106(maximum current and minimum current are distinguished
It is 10-5A and 10-11A), mobility 0.4cm2(the mobility calculation formula of saturation region is/(Vs)Wherein, the silica in the organic single crystal thin film transistor as the 300nm thickness of insulating layer
Capacitor CiFor, while the long L and wide W of channel are respectively 20 μm and 200 μm,It indicates in Fig. 5, i.e., in right ordinate
I1/2,It is acquired according to the slope of a curve of right ordinate is subject in Fig. 5).
Embodiment 3
In the description of embodiment 3, details are not described herein with the something in common of embodiment 1, only describes with embodiment 1 not
Same place.Embodiment 3 difference from example 1 is that, in step 140, with 1,7- bis- (4- hexyl phenyl) dioxa
The o-dichlorobenzene solution that anthanthrene concentration is 1mg/mL is casting film forming solution, then through tetrafluoroethene membrane filtration, takes 30 μ L drops
Be applied to and be placed on the decorative layer of sample obtained through step 130 cleaning in 40 DEG C of thermal station, it is to be evaporated it is dry after, use chloroform
Carry out solvent anneal 30min, obtain organic single crystal thin film, the organic single crystal thin film with a thickness of 50nm or so, using as originally having
The active layer of machine monocrystal thin films transistor.
The optical microscope picture for the organic single crystal thin film transistor that the present embodiment is prepared is as shown in Figure 7.
It is worth noting that when being prepared with active layer using casting membrane formation process, for filtering the filter membrane of casting film forming solution
It is not restricted to tetrafluoroethene filter membrane, other filter membranes made of organic solvent are to reach the purpose；And in drop coating mistake
Cheng Zhong is poured the dosage of film forming solution also without particular provisions, is determined according to the specific size of decorative layer in practical operation.
Embodiment 4
In the description of embodiment 4, details are not described herein with the something in common of embodiment 1, only describes with embodiment 1 not
Same place.Embodiment 4 difference from example 1 is that, in step 140, with 1,7- bis- (4- hexyl phenyl) dioxa
The o-dichlorobenzene solution that anthanthrene concentration is 0.5mg/mL is casting film forming solution, then through tetrafluoroethene membrane filtration, takes 30 μ L
Drop coating in being placed on the decorative layer of sample obtained through step 130 cleaning in 60 DEG C of thermal station, it is to be evaporated it is dry after, use three chloromethanes
Alkane carries out solvent anneal 10min, obtains organic single crystal thin film, the organic single crystal thin film with a thickness of 40nm or so, using as this
The active layer of organic single crystal thin film transistor.
The optical microscope picture for the organic single crystal thin film transistor that the present embodiment is prepared is as shown in Figure 8.
Embodiment 5
In the description of embodiment 4, details are not described herein with the something in common of embodiment 1, only describes with embodiment 1 not
Same place.Embodiment 4 difference from example 1 is that, it is in step 140, dense with 5,11- dioctyl dioxa anthanthrene
The chloroform soln that degree be 3mg/mL is pulling film forming solution, will clean obtained sample according to perpendicular to mentioning through step 130
The direction for pulling into coating solution liquid level is immersed, and pulling film forming liquid is made gradually to stick modification layer surface, after standing 5min, with 100 μ
The pull rate of m/s is slowly mentioned to more than liquid level, and the vacuum annealing 30min at 80 DEG C, obtains organic single crystal thin film, this is organic
Monocrystal thin films with a thickness of 60nm or so, using the active layer as this organic single crystal thin film transistor.
Embodiment 6
In the description of embodiment 6, details are not described herein with the something in common of embodiment 1, only describes with embodiment 1 not
Same place.Embodiment 6 difference from example 1 is that, it is in step 140, dense with 1,7- dioctyl dioxa anthanthrene
The toluene solution that degree be 6mg/mL is pulling film forming solution, by through the step 130 obtained sample of cleaning according to perpendicular to lift at
The direction of coating solution liquid level is immersed, and pulling film forming liquid is made gradually to stick modification layer surface, after standing 5min, with 100 μm/s
Pull rate slowly mention to more than liquid level, and the vacuum annealing 40min at 80 DEG C obtains organic single crystal thin film, organic list
Brilliant film with a thickness of 60nm or so, using the active layer as this organic single crystal thin film transistor.
The optical microscope picture for the organic single crystal thin film transistor that the present embodiment is prepared is as shown in Figure 9.
Embodiment 7
In the description of embodiment 7, details are not described herein with the something in common of embodiment 1, only describes with embodiment 1 not
Same place.Embodiment 7 difference from example 1 is that, it is in step 140, dense with 1,7- dioctyl dioxa anthanthrene
The chloroformic solution that degree be 2mg/mL is pulling film forming solution, by through the step 130 obtained sample of cleaning according to perpendicular to lift at
The direction of coating solution liquid level is immersed, and pulling film forming liquid is made gradually to stick modification layer surface, after standing 5min, with 500 μm/s
Pull rate slowly mention to more than liquid level, and the vacuum annealing 40min at 80 DEG C obtains organic single crystal thin film, organic list
Brilliant film with a thickness of 60nm or so, using the active layer as this organic single crystal thin film transistor.
The optical microscope picture for the organic single crystal thin film transistor that the present embodiment is prepared is as shown in Figure 10.
Embodiment 8
In the description of embodiment 8, details are not described herein with the something in common of embodiment 1, only describes with embodiment 1 not
Same place.Embodiment 8 difference from example 1 is that, it is in step 140, dense with 2,8- dioctyl dioxa anthanthrene
The toluene solution that degree be 1mg/mL is pulling film forming solution, by through the step 130 obtained sample of cleaning according to perpendicular to lift at
The direction of coating solution liquid level is immersed, and pulling film forming liquid is made gradually to stick modification layer surface, after standing 5min, with 100 μm/s
Pull rate slowly mention to more than liquid level, and the vacuum annealing 40min at 80 DEG C obtains organic single crystal thin film, organic list
Brilliant film with a thickness of 60nm or so, using the active layer as this organic single crystal thin film transistor.
The optical microscope picture for the organic single crystal thin film transistor that the present embodiment is prepared is as shown in figure 11.
It is worth noting that the raw material of the organic single crystal thin film as described in above-described embodiment 1,2,5,6,7,8 is total to
Yoke polycyclic aromatic compounds are dissolved in toluene, in chloroform to form pulling film forming solution, have described in the conduct in embodiment 3,4
The soluble conjugated polycyclic aromatic compounds of the raw material of machine monocrystal thin films are dissolved in o-dichlorohenzene to be formed and be poured film forming solution, but
The present invention is not restricted to this, and the organic solvent for forming pulling film forming solution can also be tetrahydrofuran etc., and is formed and poured into
The organic solvent of coating solution can also be chloroform, toluene etc..
It one is mentioned that hereby, in the above embodiment of the invention, the knot for the organic single crystal thin film transistor being prepared
The bottom gate type of structure referring to fig. 1, but it is of the invention it is critical that active layer in organic single crystal thin film transistor
Composition, structure and preparation method, therefore the composition of active layer according to the present invention, structure and preparation method etc. may be applicable to
Top gate type organic single crystal thin film transistor.
Although the present invention has shown and described referring to specific embodiment, it should be appreciated by those skilled in the art that:
In the case where not departing from the spirit and scope of the present invention being defined by the claims and their equivalents, can carry out herein form and
Various change in details.
Claims (6)
1. a kind of organic single crystal thin film transistor, including substrate；And it is stacked gradually from bottom to top in the grid electricity in the substrate
Pole, insulating layer；Interval is formed in source electrode, the drain electrode of the surface of insulating layer；It is characterized by further comprising:
Decorative layer is formed in the surface of insulating layer；The raw material of the decorative layer is silane；
Active layer is formed in the modification layer surface, and material is the consistent organic single crystal thin film of crystal orientation；Organic list
The raw material of brilliant film is conjugation polycyclic aromatic compounds；
Wherein, active force is generated between the silane and the conjugation polycyclic aromatic compounds.
2. organic single crystal thin film transistor according to claim 1, which is characterized in that the conjugation polycyclic aromatic compounds
Selected from 2,8- octyl dioxa anthanthrene, 5,11- octyl dioxa anthanthrene, 1,7- dioctyl dioxa anthanthrene, 1,7- bis-
Any one in (4- hexyl phenyl) dioxa anthanthrene.
3. organic single crystal thin film transistor according to claim 1, which is characterized in that the silane is selected from phenyl trichlorine silicon
Alkane, octadecyl trichlorosilane alkane, 3-aminopropyltriethoxysilane, hexamethyldisilazane, in fluorine-containing alkyltrichlorosilanes
Any one.
4. a kind of preparation method of organic single crystal thin film transistor a method according to any one of claims 1-3, which is characterized in that including
Step:
A, grid, insulating layer are successively prepared in substrate, and are arranged at intervals at the source electrode of the surface of insulating layer, drain electrode；
B, decorative layer is prepared in the surface of insulating layer；The raw material of the decorative layer is silane；
C, an organic single crystal thin film is formed as active in the modification layer surface using pulling film forming method or casting membrane formation process
Layer；
The preparation method of the pulling film forming method specifically:
The raw material of the organic single crystal thin film is dissolved in organic solvent, the pulling film forming that concentration is 1mg/mL~6mg/mL is formed
Solution；Wherein, any one of the organic solvent in chloroform, toluene, tetrahydrofuran；The organic single crystal thin film
Raw material be conjugation polycyclic aromatic compounds；
Enable the surface of the decorative layer of the step B perpendicular to the liquid level of the pulling film forming solution be immersed in it is described lifting at
In coating solution, slowly proposed then along fixed direction with 25 μm/s~500 μm/s pull rate；
In 80 DEG C or less vacuum annealing 10min~60min, the organic single crystal thin film with a thickness of 20nm~60nm is obtained；
The Preparation Method of the casting membrane formation process specifically:
The raw material of the organic single crystal thin film is dissolved in organic solvent, forming concentration is pouring into for 0.5mg/mL~1mg/mL
Coating solution；Wherein, any one of the organic solvent in chloroform, toluene, o-dichlorohenzene；The organic single-crystal is thin
The raw material of film is conjugation polycyclic aromatic compounds；
After the casting film forming solution filtering, drop coating is on the decorative layer；
Solvent anneal 10min~30min obtains the organic single crystal thin film with a thickness of 20nm~60nm in the modification layer surface；
Wherein, any one of the solvent that the solvent anneal uses in methylene chloride, chloroform, tetrahydrofuran.
5. the preparation method according to claim 4, which is characterized in that it is pungent that the conjugation polycyclic aromatic compounds are selected from 2,8-
Base dioxa anthanthrene, 5,11- octyl dioxa anthanthrene, 1,7- dioctyl dioxa anthanthrene, (the 4- hexyl benzene of 1,7- bis-
Base) any one in dioxa anthanthrene.
6. the preparation method according to claim 4, which is characterized in that the silane is selected from phenyl trichlorosilane, octadecane
It is base trichlorosilane, 3-aminopropyltriethoxysilane, hexamethyldisilazane, any one in fluorine-containing alkyltrichlorosilanes
Kind.
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| JP2008235581A (en) * | 2007-03-20 | 2008-10-02 | National Institute Of Advanced Industrial & Technology | Organic thin film transistor and manufacturing method thereof |
| CN102637825A (en) * | 2012-04-24 | 2012-08-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Preparation method of organic film transistor |
| CN103972388A (en) * | 2014-05-09 | 2014-08-06 | 北京航空航天大学 | Method for preparing high-orientation small organic molecule semiconductor single-crystal patterns with controllable sizes |
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