CN106158911A - A kind of preparation method of smart window - Google Patents
A kind of preparation method of smart window Download PDFInfo
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- CN106158911A CN106158911A CN201610349768.9A CN201610349768A CN106158911A CN 106158911 A CN106158911 A CN 106158911A CN 201610349768 A CN201610349768 A CN 201610349768A CN 106158911 A CN106158911 A CN 106158911A
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The present invention provides the preparation method of a kind of smart window; described smart window includes smart window and the smart window based on active-matrix Organic Light Emitting Diode based on passive-matrix Organic Light Emitting Diode, comprising: anodic deposition step, substrate pattern making step, organic material evaporation step, electron injecting layer making step, negative electrode making step, protective layer making step, planarization layer and liquid crystal scan electrode making step, LCD Controlling unit making step, perfusion liquid crystal step, encapsulation step.The present invention fills specific liquid crystal material between transparent OLED negative electrode and bonnet; the total reflection loss of OLED negative electrode exiting surface can not only be reduced; freely changing of OLED transmission and reflection can also be realized by the energising of liquid crystal and power-off; reach Based Intelligent Control and go out light and the purpose of autonomous display; so that the smart window simple in construction of preparation, thickness are thin, low in energy consumption; having secret protection, the function of autonomous display, in vehicle-mounted, market, aviation etc., numerous scene has very big application potential.
Description
Technical field
The present invention relates to OLED Display Technique field, be specifically related to the preparation method of a kind of smart window.
Background technology
Conventional smart window (Smart Window) can only carry out light transmission rate regulation, it is impossible to realizes autonomous display；If will
Smart window is integrated with other displays, although can independently show, but has that structure is complicated, power consumption is big, thickness is big
Deng deficiency.(Organic Light Emitting Diode is called for short: OLED) although having lower transparent organic light emitting diode
Power consumption, higher transmitance, but light cut-off effect cannot be realized, be unfavorable in some place, particularly secret protection place
Application；As when automotive interior is more changed one's clothes, need the viewing of the isolation external world.
Therefore, need to develop can not only reduce OLED negative electrode exiting surface total reflection loss, moreover it is possible to realize OLED transmission
With reflection translation function, and the adjustable smart window of transmitance.
Content of the invention
It is an object of the invention to provide the preparation method of a kind of smart window so that the smart window of preparation is possible not only in transmission
And realize freely changing between reflection, and transmitance can be regulated, realize autonomous display.
The present invention is achieved through the following technical solutions:
The present invention relates to the preparation method of a kind of smart window, described smart window includes based on passive-matrix organic light-emitting diodes
The smart window of pipe and the smart window based on active-matrix Organic Light Emitting Diode, comprising:
Anodic deposition step: deposit transparent conductive film on substrate, as transmission anode；
Substrate pattern making step: deposition has the substrate of transmission anode be carried out successively, anode pattern makes, insulation
Layer pattern makes and cathode insulated column pattern production process；
Organic material is deposited with step: will make figuratum substrate and send into evaporation chamber, and locate in advance through oxygen gas plasma
It after reason, is deposited with hole injection layer, hole transmission layer, electronic barrier layer, luminescent layer, hole blocking layer, electron transfer layer successively；
Electron injecting layer making step: use electron injection material to make electron injecting layer；
Negative electrode making step: use transparent conductive material to make negative electrode；
Protective layer making step: deposit layer of transparent insulating protective layer on transparent cathode；
Planarization layer and liquid crystal scan electrode making step: at transparent insulation protective layer planarization layer fabricated above, liquid crystal
It is negative electrode that scan electrode uses transparent conductive material；
LCD Controlling unit making step: make thin film transistor (TFT) array on bonnet；
Perfusion liquid crystal step: perfusion liquid crystal material；
Encapsulation step: substrate and bonnet are packaged.
Further, when the smart window that described smart window is based on active-matrix Organic Light Emitting Diode, at described sun
Before the deposition step of pole, also include: thin film transistor (TFT) array preparation process: on substrate, prepare thin film transistor (TFT) array.
Further, described substrate is glass substrate or flexible base board, and described bonnet is glass back cover or flexible bonnet.
Further, when described substrate is flexible base board, in described anodic deposition step, on substrate, deposition is thoroughly
Before bright conductive film, first connate water vapor barrier coatings.
Further, between described aqueous vapor separation layer, organic matter layer is added.
Further, when described substrate be glass substrate, described bonnet be glass back cover when, use frit seal or section
Hermetically sealed mode, or use flexible package mode；
When described substrate be flexible base board, described bonnet for flexible bonnet when, use thin-film package or hybrid encapsulation side
Formula, encapsulating structure is water blocking layer and the spaced structure of cushion.
Further, when using hybrid packaged type, water blocking layer is pasted with one layer of Obstruct membrane by optical cement.
The beneficial effects of the present invention is: the present invention is saturating with the light of liquid crystal material by the display function combining transparent OLED
Overregulate function, between transparent OLED negative electrode and bonnet, fill specific liquid crystal material, OLED negative electrode can not only be reduced and go out
The total reflection loss in light face, moreover it is possible to realize freely changing of OLED transmission and reflection by the energising of liquid crystal and power-off, reach intelligence
The purpose light and autonomous display can be controlled, so that the smart window simple in construction of preparation, thickness are thin, low in energy consumption, have
Secret protection, the function of autonomous display, in vehicle-mounted, market, aviation etc., numerous scene has very big application potential.
Brief description
Fig. 1-1,1-2 are the structural representations of PMOLED；
Fig. 2 is the thin-film encapsulation layer structural representation in the present invention；
Fig. 3 is the hybrid encapsulation layer structure schematic diagram in the present invention；
Fig. 4 is the structural representation of the smart window in the present invention based on PMOLED；
Fig. 5 is the dot structure schematic diagram of AMOLED；
Fig. 6 is the structural representation of the smart window in the present invention based on AMOLED.
Detailed description of the invention
Clearly describing technical scheme below in conjunction with accompanying drawing, described embodiment is only this
A part of embodiment of invention, rather than whole embodiments.
Embodiment 1:
Smart window includes two big classes, is based respectively on different Organic Light Emitting Diode OLED structure: passive-matrix is organic
PMOLED) and active-matrix (Passive Matrix Organic Light Emitting Diode is called for short: light emitting diode
Organic Light Emitting Diode (Active Matrix Organic Light Emitting Diode is called for short AMOLED).
Fig. 1-1 shows the structure of passive-matrix Organic Light Emitting Diode PMOLED, including anode part the 11st, anode is transparent
Conductive film ITO the 12nd, insulating barrier (PR or PI) the 13rd, cathode portion the 21st, negative electrode transparent conductive film ITO the 22nd, cathode separator
Or sidewall 23 and cathode contacts device the 24th, cathodic metal bar (film) the 25th, multiple organic layers 30；Fig. 1-2 is A cross section in Fig. 1-1
Schematic diagram.
The preparation method of the smart window that the present embodiment relates to is described as follows:
(1) passive-matrix Organic Light Emitting Diode PMOLED and polymer dispersed liquid crystal (Polymer is combined
Dispersed Liquid Crystal, is called for short: PDLC) prepare, comprise the steps:
1) anodic deposition step: depositing transparent conductive film on substrate, as transmission anode, thickness range is 20-
200nm, sheet resistance scope is 0.1-50 Ω/；Transparent conductive film is that ITO, IZO, ITO/Ag/ITO, IZO/Ag/IZO, carbon are received
Mitron, Graphene, Nano Silver etc..
Described substrate is glass substrate or flexible base board, and wherein, flexible base board is PI, PES, PEN, PET, PC, PMMA etc.；
When described substrate is flexible base board, in described anodic deposition step, before substrate deposits transparent conductive film, first sink
Ponding vapor barrier coatings.Aqueous vapor separation layer is by the one in SiOx, SiNx, SiOxNy, AlOx, TiOx, ZrOx, ZnO, HfOx or several
Plant composition, use Sputter, CVD (Chemical Vapor Deposition, chemical gaseous phase deposits), ALD (Atomic
Layer Deposition, ald) etc. mode make, thickness is between 10nm-10um；Also can hinder at above-mentioned steam
Add organic matter layer, such as polyene, polyester material between interlayer, use ink jet printing (Ink-jet Printing), screen printing
Brush (Screen printing), evaporation (Evaporation), CVD (chemical vapor deposition, chemical gaseous phase
Deposition), the mode such as MLD (Molecular Layer Deposition, molecular-layer deposition) make, thickness 10nm-100um it
Between.
2) substrate pattern making step: deposition has the substrate of transmission anode be carried out successively, anode pattern makes, absolutely
The processes such as the making of edge layer (Insulator) pattern and cathode insulated column RIB pattern making；Carrying out insulating barrier (Insulator)
When pattern makes and cathode insulated column RIB pattern makes, use insulating layer material and the RIB material of high transmission rate.
3) organic material evaporation step: figuratum substrate will be made and send into evaporation chamber, through oxygen O2Plasma
It after pretreatment, is deposited with hole injection layer, hole transmission layer, electronic barrier layer, luminescent layer, hole blocking layer, electric transmission successively
Layer；
4) electron injecting layer making step: using electron injection material to make electron injecting layer, electron injection material uses
The materials such as LaB6, LiF, LiQ, Li2O, Ca, Al2O3, MgO, 12CaO 7H2O, preparation method includes heated filament evaporation, electron beam
Evaporation, sputtering, ion beam assisted depositing etc.；
5) negative electrode making step: using transparent conductive material to make negative electrode, transparent conductive material uses ITO, IZO, ITO/
The materials such as Ag/ITO, IZO/Ag/IZO, CNT, Graphene, Nano Silver, preparation method includes that heated filament evaporation, electron beam steam
Plating, sputtering, ion beam assisted depositing, chemical gaseous phase deposition CVD, ald ALD etc.；
6) protective layer making step: depositing layer of transparent insulating protective layer on transparent cathode, transparent insulation protective layer is
LiF, Li2O, CaF2, MgF2, MgO, Al2O3, ZrO2, TiO2, SiNx, SiOx, SiOxNy, ZnO, HfOx etc.；
7) planarization layer and liquid crystal scanning Common electrode fabrication step: in the planarization fabricated above of transparent insulation protective layer
Layer, planarization layer material is polyene, polyesters, and thickness range is 3-10um, makes planarization layer and uses ink jet printing (Ink-
Jet Printing), serigraphy (Screen printing), slot coated (slit coating), evaporation
(Evaporation), CVD (chemical vapor deposition, chemical gaseous phase deposits), MLD (Molecular Layer
Deposition, molecular-layer deposition) etc. mode；
It is negative electrode that liquid crystal scanning Common electrode uses transparent conductive material, and transparent conductive material is ITO, IZO, ITO/
Ag/ITO, IZO/Ag/IZO, CNT, Graphene, Nano Silver etc., preparation method includes heated filament evaporation, electron beam evaporation plating, spatters
Penetrate, ion beam assisted depositing, chemical gaseous phase deposit CVD, ald ALD etc.；
8) LCD Controlling unit making step: make thin film transistor (TFT) tft array on bonnet；Bonnet be glass back cover or
Flexible bonnet, flexible bonnet uses the materials such as PI, PES, PEN, PET, PC to prepare；Thin film transistor (TFT) TFT can for non-crystalline silicon tft,
Multi-crystal TFT, oxide TFT and organic matter TFT, prioritizing selection oxide TFT and organic matter TFT.
9) liquid crystal step is irrigated: perfusion liquid crystal material；
10) encapsulation step: substrate and bonnet are packaged.
When described substrate be glass substrate, described bonnet be glass back cover when, use frit seal (Frit sealing)
Or section seals (Face seal) packaged type；When using the hermetically sealed mode of section, sputtering (Sputter) can be used, change
Learn the method depositing encapsulation material such as vapour deposition CVD, ald ALD, encapsulating material be SiOx, SiNx, SiOxNy,
One or more in AlOx, TiOx, ZrOx, every kind of material thickness between 10nm-10um, gross thickness 10nm-10um it
Between.
When described substrate be flexible base board, described bonnet for flexible bonnet when, use thin-film package (Thin Film
Encapsulation) or hybrid encapsulation (Hybrid Encapsultion) mode, encapsulating structure is water blocking layer and cushion
Spaced structure；Water blocking layer can use sputtering (Sputter), chemical gaseous phase deposition CVD, ald ALD etc. side
Method depositing encapsulation material, encapsulating material is one or more in SiOx, SiNx, SiOxNy, AlOx, TiOx, ZrOx, every kind of material
Material thickness is between 10nm-10um；Cushion can use inorganic material or organic material, can be identical with water blocking layer material or not
With.If cushioning layer material is identical with water blocking layer material, then need to change cushion preparation technology.Organic buffer layer can use polyene,
Polyester material, utilizes ink jet printing (Ink-jet Printing), serigraphy (Screen printing), evaporation
(Evaporation), the modes such as CVD (chemical gaseous phase deposition), MLD (molecular-layer deposition) make, thickness 10nm-100um it
Between.Thin-film package can be only with one layer of water blocking layer, it would however also be possible to employ multilayer water blocking layer and cushion.Thin-film packing structure such as Fig. 2
Shown in.
Compared to thin-film package, hybrid encapsulation needs to add one layer of Obstruct membrane (Barrier Film) on water blocking layer and increases
Strong block-water effect.Obstruct membrane uses optical cement to attach, and optical cement can use OCA (Optical Clear Adhesive, optics
Transparent adhesive tape) or OCR (Optical Clear Resin, optical cement), as shown in Figure 3.
It is provided with glass substrate and the smart window of glass back cover may be used without flexible package, to reduce the entirety of smart window
Thickness.
Fig. 4 shows the structure of the smart window in the present invention based on PMOLED, including the 11st, substrate the 10th, transmission anode has
Machine material layer the 30th, cathode insulated column RIB pattern the 41st, PI pattern the 42nd, half transmitting negative electrode the 21st, liquid crystal the 5th, sealing the 6th, bonnet 7 and bonnet
The TFT backplate 71 of interior driving LCD.
Embodiment 2:
Fig. 5 is the dot structure schematic diagram of AMOLED；The dot structure of AMOLED includes anode, negative electrode, organic layer, TFT
Array.
The preparation method of the smart window that the present embodiment relates to is described as follows:
(1) active-matrix Organic Light Emitting Diode AMOLED and polymer dispersed liquid crystal (Polymer is combined
Dispersed Liquid Crystal, is called for short: PDLC) prepare, comprise the steps:
1) thin film transistor (TFT) array preparation process: prepare thin film transistor (TFT) tft array on substrate, tft array includes non-
Crystal silicon TFT, multi-crystal TFT, oxide TFT, one or more mixing of organic matter TFT, preferred oxides TFT and organic matter
TFT。
TFT structure can contact at the bottom of bottom gate, contact at the bottom of bottom gate top contact, top-gated, the one in top-gated top contact, double grid
Or it is multiple.If bottom gate type TFT, BCE (Back Channel Etch, backward channel etches) structure both can be used, it is possible to use
ESL (Etch Stop Layer, etching stopping layer) structure.
All electrode materials, including gate electrode (Gate electrode), source/drain electrode (Source/Drain
Electrode), electric capacity electrode, anode, negative electrodes etc., all use ITO, IZO, ITO/Ag/ITO, IZO/Ag/IZO, carbon nanometer
The transparent materials such as pipe, Graphene, Nano Silver make.
2) anodic deposition step: depositing transparent conductive film on substrate, as transmission anode, thickness range is 20-
200nm, sheet resistance scope is 0.1-50 Ω/；Transparent conductive film is that ITO, IZO, ITO/Ag/ITO, IZO/Ag/IZO, carbon are received
Mitron, Graphene, Nano Silver etc..
Described substrate is glass substrate or flexible base board, and wherein, flexible base board is PI, PES, PEN, PET, PC, PMMA etc.；
When described substrate is flexible base board, in described anodic deposition step, before substrate deposits transparent conductive film, first sink
Ponding vapor barrier coatings.Aqueous vapor separation layer is made up of one or more in SiOx, SiNx, SiOxNy, AlOx, TiOx, ZrOx etc.,
Use Sputter, CVD (Chemical Vapor Deposition, chemical gaseous phase deposits), ALD (Atomic Layer
Deposition, ald) etc. mode make, thickness is between 10nm-10um；Also can above-mentioned aqueous vapor separation layer it
Between add organic matter layer, such as polyene, polyester material, use ink jet printing (Ink-jet Printing), serigraphy
(chemical vapor deposition, chemical gaseous phase is sunk for (Screen printing), evaporation (Evaporation), CVD
Long-pending), the mode such as MLD (Molecular Layer Deposition, molecular-layer deposition) make, thickness 10nm-100um it
Between.
3) substrate pattern making step: deposition has the substrate of transmission anode be carried out successively, anode pattern makes, absolutely
The processes such as the making of edge layer (Insulator) pattern and cathode insulated column RIB pattern making；Carrying out insulating barrier (Insulator)
When pattern makes and cathode insulated column RIB pattern makes, use insulating layer material and the RIB material of high transmission rate.
4) organic material evaporation step: figuratum substrate will be made and send into evaporation chamber, through oxygen O2Plasma
It after pretreatment, is deposited with hole injection layer, hole transmission layer, luminescent layer, electron transfer layer successively；
5) electron injecting layer making step: using electron injection material to make electron injecting layer, electron injection material uses
The materials such as LaB6, LiF, LiQ, Li2O, Ca, Al2O3, MgO, 12CaO 7H2O, preparation method includes heated filament evaporation, electron beam
Evaporation, sputtering, ion beam assisted depositing etc.；
6) negative electrode making step: using transparent conductive material to make negative electrode, transparent conductive material uses ITO, IZO, ITO/
The materials such as Ag/ITO, IZO/Ag/IZO, CNT, Graphene, Nano Silver, preparation method includes that heated filament evaporation, electron beam steam
Plating, sputtering, ion beam assisted depositing, chemical gaseous phase deposition CVD, ald ALD etc.；
7) protective layer making step: on transparent cathode deposit layer of transparent insulating protective layer, as LiF, Li2O, CaF2,
MgF2, MgO, Al2O3, ZrO2, TiO2, SiNx, SiOx, SiOxNy etc.；
8) planarization layer and liquid crystal Common electrode fabrication step: at transparent insulation protective layer planarization layer fabricated above,
Planarization layer material is polyene, polyesters, and thickness range is 3-10um, makes planarization layer and uses ink jet printing (Ink-jet
Printing), serigraphy (Screen printing), evaporation (Evaporation), CVD (chemical vapor
Deposition, chemical gaseous phase deposits), the mode such as MLD (Molecular Layer Deposition, molecular-layer deposition).
It is negative electrode that liquid crystal scanning Common electrode uses transparent conductive material, and transparent conductive material is ITO, IZO, ITO/
Ag/ITO, IZO/Ag/IZO, CNT, Graphene, Nano Silver etc., preparation method includes heated filament evaporation, electron beam evaporation plating, spatters
Penetrate, ion beam assisted depositing, chemical gaseous phase deposit CVD, ald ALD etc.；
9) LCD Controlling unit making step: make thin film transistor (TFT) tft array on bonnet；Bonnet be glass back cover or
Flexible bonnet, flexible bonnet uses the materials such as PI, PES, PEN, PET, PC to prepare；Thin film transistor (TFT) TFT can for non-crystalline silicon tft,
Multi-crystal TFT, oxide TFT and organic matter TFT, prioritizing selection oxide TFT and organic matter TFT.
10) liquid crystal step is irrigated: perfusion liquid crystal material；
11) encapsulation step: substrate and bonnet are packaged.
When described substrate be glass substrate, described bonnet be glass back cover when, use frit seal (Frit sealing)
Or section seals (Face seal) packaged type；When using the hermetically sealed mode of section, sputtering (Sputter) can be used, change
Learn the method depositing encapsulation material such as vapour deposition CVD, ald ALD, encapsulating material be SiOx, SiNx, SiOxNy,
One or more in AlOx, TiOx, ZrOx, every kind of material thickness between 10nm-10um, gross thickness 10nm-10um it
Between.
When described substrate be flexible base board, described bonnet for flexible bonnet when, use thin-film package (Thin Film
Encapsulation) or hybrid encapsulation (Hybrid Encapsultion) mode, encapsulating structure is water blocking layer and cushion
Spaced structure；Water blocking layer can use sputtering (Sputter), chemical gaseous phase deposition CVD, ald ALD etc. side
Method depositing encapsulation material, encapsulating material is one or more in SiOx, SiNx, SiOxNy, AlOx, TiOx, ZrOx, every kind of material
Material thickness is between 10nm-10um；Cushion can use inorganic material or organic material, can be identical with water blocking layer material or not
With.If cushioning layer material is identical with water blocking layer material, then need to change cushion preparation technology.Organic buffer layer can use polyene,
Polyester material, utilizes ink jet printing (Ink-jet Printing), serigraphy (Screen printing), evaporation
(Evaporation), the modes such as CVD (chemical gaseous phase deposition), MLD (molecular-layer deposition) make, thickness 10nm-100um it
Between.Thin-film package can be only with one layer of water blocking layer, it would however also be possible to employ multilayer water blocking layer and cushion.Thin-film packing structure such as Fig. 2
Shown in.
Compared to thin-film package, hybrid encapsulation needs to add one layer of Obstruct membrane (Barrier Film) on water blocking layer and increases
Strong block-water effect.Obstruct membrane uses optical cement to attach, and optical cement can use OCA (Optical Clear Adhesive, optics
Transparent adhesive tape) or OCR (Optical Clear Resin, optical cement), as shown in Figure 3.
It is provided with glass substrate and the smart window of glass back cover may be used without flexible package, to reduce the entirety of smart window
Thickness.
In the above-described embodiments, anode and the negative electrode of OLED all uses transparent material, as ITO, IZO, metallic film (Ag,
Al etc.) make, transparent OLED can be obtained.PDLC is transparent in the state of no power, presents white reflective state during energising.
Transparent organic light emitting diode OLED and polymer dispersed liquid crystal PDLC is combined by embodiments of the invention,
Transparent organic light emitting diode OLED makes the Vcom electrode of polymer dispersed liquid crystal PDLC, by battle array is driven to OLED
Row, PDLC drive the control of array, it is achieved switching between transmission and reflection for the OLED.
Fig. 6 shows the structure of the smart window in the present invention based on AMOLED, including the driving in substrate 10 and substrate
The TFT backplate of LCD the 101st, transmission anode the 11st, organic material layer the 30th, cathode insulated column RIB pattern the 41st, PI pattern the 42nd, half transmitting is cloudy
The TFT backplate 71 of the driving LCD in pole the 21st, liquid crystal the 5th, sealing the 6th, bonnet 7 and bonnet.
The effect that the embodiment of the preparation method of smart window of the present invention obtains is:
1) transparent OLED and liquid crystal integration-in-one structure, integral thickness is equal with transparent OLED, it is achieved transmitance from 0 to
In 100% arbitrarily adjustable, and can independently show；
2) transparent cathode and preparation method thereof, (X and Y is Sn, Zn etc. to preferably IXO/Ag/IYO laminated film, X and Y can phase
Same or different), use the films such as special sputtering equipment deposition IXO, IYO；The initial period of IXO, IYO thin film deposition, uses
Low-power, high gas pressure；Reduce the destruction to organic material for the high energy particle；
3) transparent insulation protective layer, as LiF, Li2O, CaF2, MgF2, MgO, Al2O3, ZrO2, TiO2, SiNx, SiOx,
SiOxNy etc., it is to avoid luminous organic material and transparent cathode are destroyed by steam etc. in planarization layer manufacturing process；
4) planarization layer and making thereof, by planarization process is carried out to transparent OLED device, can above it in situ
Make the Vcommon electrode of PDLC, it is not necessary to newly-increased Vcommon substrate；
If above-described embodiment is the present invention preferably embodiment, but embodiments of the present invention are not by above-described embodiment
Restriction, the change made under other any Spirit Essence without departing from the present invention and principle, modifications, replacement, combination, simple
Change, all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (7)
1. a preparation method for smart window, described smart window include based on passive-matrix Organic Light Emitting Diode smart window and
Smart window based on active-matrix Organic Light Emitting Diode, it is characterised in that include:
Anodic deposition step: deposit transparent conductive film on substrate, as transmission anode；
Substrate pattern making step: deposition has the substrate of transmission anode be carried out successively, anode pattern makes, insulating barrier figure
Case makes and cathode insulated column pattern production process；
Organic material is deposited with step: will make figuratum substrate and send into evaporation chamber, after pre-processing through oxygen gas plasma,
It is deposited with hole injection layer, hole transmission layer, electronic barrier layer, luminescent layer, hole blocking layer, electron transfer layer successively；
Electron injecting layer making step: use electron injection material to make electron injecting layer；
Negative electrode making step: use transparent conductive material to make negative electrode；
Protective layer making step: deposit layer of transparent insulating protective layer on transparent cathode；
Planarization layer and liquid crystal scan electrode making step: at transparent insulation protective layer planarization layer fabricated above, liquid crystal scans
It is negative electrode that electrode uses transparent conductive material；
LCD Controlling unit making step: make thin film transistor (TFT) array on bonnet；
Perfusion liquid crystal step: perfusion liquid crystal material；
Encapsulation step: substrate and bonnet are packaged.
2. the preparation method of smart window according to claim 1, when described smart window is for based on active-matrix organic light emission
During the smart window of diode, it is characterised in that before described anodic deposition step, also include: prepared by thin film transistor (TFT) array
Step: prepare thin film transistor (TFT) array on substrate.
3. the preparation method of smart window according to claim 1, it is characterised in that:
Described substrate is glass substrate or flexible base board；Described bonnet is glass back cover or flexible bonnet.
4. the preparation method of smart window according to claim 3, it is characterised in that:
When described substrate is flexible base board, in described anodic deposition step, before substrate deposits transparent conductive film,
First connate water vapor barrier coatings.
5. the preparation method of smart window according to claim 4, it is characterised in that:
Add organic matter layer between described aqueous vapor separation layer.
6. the preparation method of smart window according to claim 3, it is characterised in that:
When described substrate be glass substrate, described bonnet be glass back cover when, use frit seal or the hermetically sealed mode of section,
Or use flexible package mode；
When described substrate be flexible base board, described bonnet for flexible bonnet when, use thin-film package or hybrid packaged type, envelope
Assembling structure is water blocking layer and the spaced structure of cushion.
7. the preparation method of smart window according to claim 6, it is characterised in that:
When using hybrid packaged type, water blocking layer is pasted with one layer of Obstruct membrane by optical cement.
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Cited By (4)
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| CN108735109A (en) * | 2017-04-25 | 2018-11-02 | K工房株式会社 | Light-emitting diode display |
| CN110819941A (en) * | 2019-11-13 | 2020-02-21 | 上海卫星装备研究所 | Film modification method and system based on auxiliary deposition |
| CN110993669A (en) * | 2019-12-12 | 2020-04-10 | Tcl华星光电技术有限公司 | Display panel manufacturing method and display panel |
| EP3734662A4 (en) * | 2018-09-14 | 2021-03-03 | Yungu (Gu'an) Technology Co., Ltd. | Display panel, display screen, and display terminal |
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| KR20130137462A (en) * | 2012-06-07 | 2013-12-17 | 성균관대학교산학협력단 | A reflective-luminescence display device, a reflective-luminescence display module and a reclective plate |
| CN105009583A (en) * | 2013-03-12 | 2015-10-28 | 皇家飞利浦有限公司 | Transparent autostereoscopic display |
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| CN108735109A (en) * | 2017-04-25 | 2018-11-02 | K工房株式会社 | Light-emitting diode display |
| CN108735109B (en) * | 2017-04-25 | 2021-11-12 | K工房株式会社 | LED display |
| EP3734662A4 (en) * | 2018-09-14 | 2021-03-03 | Yungu (Gu'an) Technology Co., Ltd. | Display panel, display screen, and display terminal |
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| CN110819941A (en) * | 2019-11-13 | 2020-02-21 | 上海卫星装备研究所 | Film modification method and system based on auxiliary deposition |
| CN110993669A (en) * | 2019-12-12 | 2020-04-10 | Tcl华星光电技术有限公司 | Display panel manufacturing method and display panel |
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| Publication number | Publication date |
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| CN106158911B (en) | 2019-06-14 |
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