CN106158889A - Image sensor - Google Patents
Image sensor Download PDFInfo
- Publication number
- CN106158889A CN106158889A CN201510198679.4A CN201510198679A CN106158889A CN 106158889 A CN106158889 A CN 106158889A CN 201510198679 A CN201510198679 A CN 201510198679A CN 106158889 A CN106158889 A CN 106158889A
- Authority
- CN
- China
- Prior art keywords
- layer
- image sensor
- refractive index
- dielectric layer
- equal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims abstract description 104
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 18
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000011241 protective layer Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 230000008033 biological extinction Effects 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 17
- 230000000903 blocking effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 235000014698 Brassica juncea var multisecta Nutrition 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 241000251184 Rajiformes Species 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention discloses an image sensor, comprising a semiconductor substrate, a first electrode, a second electrode and a third electrode, wherein the semiconductor substrate is provided with a main surface; at least one photosensitive structure arranged on the main surface; an inner dielectric layer covering the photosensitive structure; and a dielectric layer stack structure between the inner dielectric layer and the photosensitive structure, wherein the dielectric layer stack structure comprises a metal silicide blocking layer with a first refractive index n1, a protective layer with a second refractive index n2, and a contact etch stop layer with a third refractive index n3, the second refractive index n2 is less than or equal to the third refractive index n3, the difference between the third refractive index n3 and the second refractive index n2 is less than or equal to 0.25, and the difference between the third refractive index n3 and the first refractive index n1 is less than or equal to 0.7.
Description
Technical field
The present invention relates to image sensor (image sensor device) technology, particularly relate to one
CMOS image sensor (CMOS image sensor, CIS), can improve its quantum efficiency (quantum
Efficiency), the quantum efficiency of particularly blue light.
Background technology
CMOS image sensor is video sensing technology known in the art, and it has active member, as
Transistor, is associated with each pixel, because compatible with CMOS manufacture craft, its advantage is can
It is produced on signal transacting and sensing circuit in same integrated circuit.
CMOS image sensor is generally made up of several transistors and an optical diode (photodiode), its
Light sensitivity principles is that incident ray is divided into the combination of various different wave length light, for example red, blue, green three
Look, then received by the multiple optical sensing elements on semiconductor base respectively, and convert it to not
With strong and weak data signal.
The shortcoming of existing CMOS image sensor is that quantum efficiency (quantum efficiency) is still disliked not
Foot, particularly wavelength is between the blue light of about 425～495nm, and its quantum efficiency is usually less than 35%.By
This understands, this technical field remains a need for the CMOS image sensor of a kind of improvement, and it can solve the problem that
State the deficiencies in the prior art and shortcoming.
Content of the invention
For reaching above-mentioned purpose, the present invention proposes a kind of image sensor, includes semiconductor substrate, its
There is a first type surface；At least one photosensitive structure, is located at this first type surface；One inner layer dielectric layer, is covered in this
On photosensitive structure；And a dielectric layer stack structure, between this inner layer dielectric layer and this photosensitive structure,
Wherein this dielectric layer stack structure includes that a metal silicide barrier layer, a protective layer and a contact etching stop
Only layer, wherein, this inner layer dielectric layer directly contacts with this contact etch stop layer, wherein this metal silicide
Barrier layer has first refractive index n1, and this contact etch stop layer has one second refractive index n2, should
Protective layer has third reflect rate n3, and this second refractive index n2 is less than or equal to this third reflect rate
n3.According to embodiments of the present invention, the difference between this third reflect rate n3 and this second refractive index n2 is less than
Or it is equal to 0.25.Difference between this third reflect rate n3 and this first refractive index n1 is less than or equal to 0.7.
It for above-mentioned purpose, feature and the advantage of the present invention can be become apparent, cited below particularly is preferable to carry out
Mode, and coordinate appended accompanying drawing, it is described in detail below.But following preferred embodiment with attached
Scheme only for reference and explanation use, be not used for the present invention person of being any limitation as.
Brief description
Fig. 1 is the schematic diagram of the cross-section structure of a CMOS image sensor；
Fig. 2 is the enlarged diagram of photosensitive structure in Fig. 1.
Symbol description
1 image sensor
10 substrates
10a first type surface
11 insulation systems
21 photosensitive regions
22 photosensitive regions
23 photosensitive regions
30 incident raies
40 transistors
50 contact holes
100 photosensitive structures
200 dielectric layer stack structures
202 metal silicide barrier layers
204 protective layers
206 contact etch stop layers
210 inner layer dielectric layers
212 metal interconnecting layers
310 color filter films
310a filtered region
310b filtered region
310c filtered region
320 microlens layers
320a lens area
320b lens area
320c lens area
N1 first refractive index
N2 the second refractive index
N3 third reflect rate
Detailed description of the invention
Hereinafter, details being described with reference to the accompanying drawings, the content in those accompanying drawings also constitutes specification details
The part describing, and the special case describing mode with this embodiment practicable illustrates.Examples below
Have described that enough details make the general technology personage in this field be had to implement.Certainly, it is possible to adopt
Other embodiment, or make on the premise of not departing from embodiment described in literary composition any structural, patrol
Volume property and electrically on change.Therefore, following detailed description is not considered as limiting, otherwise,
Embodiment included in it will be defined by appended claims.
The titles such as " wafer " or " substrate " mentioned in Wen can be from the teeth outwards have material layer or
The semiconductor substrate of integrated circuit component layer.Substrate also can refer to the semiconductor base in manufacturing process or
Wafer, it is formed different material layer.For example, wafer or substrate can include doping or not mix
Miscellaneous semiconductor, insulation material or semiconductor substrate on formed epitaxial semiconductor or other known to partly lead
Body structure.
Refer to Fig. 1, which is and show according to the cross-section structure of the image sensor depicted in the embodiment of the present invention
It is intended to.As it is shown in figure 1, image sensor 1 of the present invention can be a CMOS image sensor, its
It is made in a substrate 10, such as one P-type semiconductor substrate.According to embodiments of the present invention, described base
The end 10, can also include an epitaxial layer (not shown), for example, grows up in a P+P in silicon base_Extension
Silicon layer, but it is not limited to this.
According to embodiments of the present invention, described substrate 10 can have been distinguished multiple photosensitive region the 21st, the 22nd, 23,
And the 22nd, the 21st, multiple photosensitive region 23 can correspond respectively to R (red) pixel of image sensor 1, G (green)
Pixel and B (blue) pixel.Each photosensitive region is the 21st, the 22nd, in 23, on the surface near described substrate 10
10a, is also formed with photosensitive structure 100, separates with insulation system 11 each other, for example, and shallow ridges
Slot insulation (STI) structure.According to embodiments of the present invention, described photosensitive structure can include an optical diode.
The first type surface 10a of described substrate 10 is also provided with multiple transistor arrangement, for example, selects crystalline substance
Body pipe (select transistor), transfering transistor (transfer transistor), reset transistor (reset
Transistor) etc..
According to embodiments of the present invention, it on the first type surface 10a of described substrate 10, is additionally provided with at least one
The inner layer dielectric layer 210 of printing opacity, for example, silica.According to embodiments of the present invention, at interlayer dielectric
Layer 210 can also select to be formed with metal interconnecting layer 212.According to embodiments of the present invention, it is situated between at internal layer
One color filter film 310 and a microlens layer 320 can be set in electric layer 210.Wherein, described coloured silk
Look filter coating 310 can arrange with array way, including filtered region 310a, 310b, 310c, it is respectively
Corresponding to photosensitive region the 21st, the 22nd, 23, and described microlens layer 320 is also with array way arrangement, bag
Include lens area 320a, 320b, 320c, in order to the 21st, incident ray 30 is concentrated on photosensitive region respectively
22nd, in 23.
It it is noted that the image sensor structure in Fig. 1 only illustrates, and is not used to limit this
Invention category, the present invention is likely to be applied to other image sensor structure, for example, has photoconductive tube
The image sensor of structure.
According to embodiments of the present invention, the first type surface 10a of inner layer dielectric layer 210 and described substrate 10 it
Between, it is additionally provided with a dielectric layer stack structure 200, for example, dielectric layer stack structure 200 can be at least
Including a metal silicide stops (silicide block, SAB) layer and a contact etch stop layer (contact
Etch stop layer, CESL).
Refer to Fig. 2, which is the enlarged diagram of photosensitive structure 100 in Fig. 1.As in figure 2 it is shown, it is front
Give an account of electric layer stacked structure 200, between the first type surface 10a of inner layer dielectric layer 210 and described substrate 10
Between.According to embodiments of the present invention, dielectric layer stack structure 200 sequentially includes a silication gold from the bottom to top
Belong to and stop (SAB) layer the 202nd, a protective layer 204 and a contact etch stop layer (CESL) 206.Wherein,
Inner layer dielectric layer 210 directly contacts with contact etch stop layer 206.
Wherein, metal silicide stops that (SAB) layer 202 is when carrying out metal silicide manufacture craft, will not
Need to be formed the area covers of metal silicide layer.Protective layer 204 mainly avoids that metal silicide is prominent to be worn, and
Improve white pixel (white pixel) phenomenon.Contact etch stop layer 206 is then used to as etching contact hole
Dry ecthing end point layer when 50.Hole 50 is follow-up would generally be filled up by tungsten metal in contact.
First incident ray 30 can pass through inner layer dielectric layer 210 into and through after refraction, enters into and through
Dielectric layer stack structure 200, enters finally in photosensitive region 23, produces electronics via photovoltaic reaction empty
Cave pair, then related transistor 40 (such as transfering transistor) or circuit are produced signal of video signal output.
According to embodiments of the present invention, metal silicide barrier layer 202 is by silica (SiO2) constituted, protect
Sheath 204 is by silicon nitride (Si3N4) constituted, contact etch stop layer 206 is by silicon oxynitride (SiON) institute
Constituting, inner layer dielectric layer 210 is then identical with metal silicide barrier layer 202, is also by silica (SiO2)
Constituted.
According to embodiments of the present invention, the thickness of the protective layer 204 being made up of silicon nitride can not be blocked up, in order to avoid
Affect light transmittance (transmittance).According to embodiments of the present invention, the thickness of protective layer 204 is preferably from about
It is 100 angstroms (angstrom) left and right, but be not limited to this.Additionally, according to embodiments of the present invention, protective layer
204 have an extinction coefficient, and (extinction coefficient, k), it is preferably lower than or equal to 0.8 (for ripple
The light of long 248nm).According to embodiments of the present invention, the thickness of contact etch stop layer 206 is preferably from about
Being that 400 Izods are right, having an extinction coefficient k, preferably lower than or equal to 0.8 (for wavelength 248nm's
Light).According to embodiments of the present invention, the thickness on metal silicide barrier layer 202 is preferably about 350 Izods
Right.
According to embodiments of the present invention, the inner layer dielectric layer 210 being made up of silica and metal silicide resistance
Barrier 202 has first refractive index n1, and the contact etch stop layer 206 being made up of silicon oxynitride has
One second refractive index n2, the protective layer 204 being made up of silicon nitride has third reflect rate n3.According to
The embodiment of the present invention, first refractive index n1, the second refractive index n2 and third reflect rate n3 are all between about
In the range of 1.4 to 2.8.
Wherein, according to embodiments of the present invention, the second refractive index n2 need to be less than or equal to third reflect rate n3,
And the difference between third reflect rate n3 and the second refractive index n2 need to be less than or equal to 0.25, third reflect rate
Difference between n3 and first refractive index n1 need to be less than or equal to 0.7.For example, first refractive index n1
Can be between 1.4～1.5, the second refractive index n2 can be about 2.0, and third reflect rate n3 is permissible
It is between 2.0～2.2.The ranges of indices of refraction of above-mentioned each dielectric layer adjusts when all may utilize chemical gaseous phase deposition
Deposition parameter is reached, for example flow, pressure, power etc., is not added with at this repeating.
The present invention is by adjusting metal silicide barrier layer the 202nd, the protection in dielectric layer stack structure 200
Refractive index associate feature between layer 204 and a contact etch stop layer 206 so that incident ray 30
After entering into inner layer dielectric layer 210, can be directed to photosensitive by dielectric layer stack structure 200 further
In region 23, so increase light transmittance, and reduce photon loss, reach to improve the mesh of quantum efficiency
's.
Confirming through experimental result, the quantum efficiency of blue light can be carried by image sensor 1 of the present invention from 35%
Rise to about 50%, and the quantum efficiency of green glow is promoted to further from 50% about 55%.
The foregoing is only the preferred embodiments of the present invention, all impartial changes done according to the claims in the present invention
Change and modify, all should belong to the covering scope of the present invention.
Claims (10)
1. an image sensor, includes:
Semiconductor base, it has a first type surface；
At least one photosensitive structure, is located at this first type surface；
Inner layer dielectric layer, is covered on this photosensitive structure；And
Dielectric layer stack structure, between this inner layer dielectric layer and this photosensitive structure, wherein this dielectric layer
Stacked structure includes metal silicide barrier layer, protective layer and contact etch stop layer, wherein, this internal layer
Dielectric layer directly contacts with this contact etch stop layer, and wherein this metal silicide barrier layer has first refractive
Rate n1, this contact etch stop layer has the second refractive index n2, and this protective layer has third reflect rate n3,
And this second refractive index n2 is less than or equal to this third reflect rate n3.
2. image sensor as claimed in claim 1, wherein said third reflect rate n3 and described the
Difference between two refractive indexes n2 is less than or equal to 0.25.
3. image sensor as claimed in claim 2, wherein said third reflect rate n3 and described the
Difference between one refractive index n1 is less than or equal to 0.7.
4. image sensor as claimed in claim 3, wherein said first refractive index n1 between 1.4～
1.5, described second refractive index n2 is 2.0, and described third reflect rate n3 is between 2.0～2.2.
5. image sensor as claimed in claim 1, wherein this metal silicide barrier layer is by silica
Being constituted, this protective layer is made up of silicon nitride, and this contact etch stop layer is made up of silicon oxynitride,
This inner layer dielectric layer is made up of silica.
6. image sensor as claimed in claim 1, wherein this protective layer has an extinction coefficient (k),
Less than or equal to 0.8 (for the light of wavelength 248nm).
7. image sensor as claimed in claim 1, wherein this contact etch stop layer has a delustring
Coefficient (k), is less than or equal to 0.8 (for the light of wavelength 248nm).
8. image sensor as claimed in claim 1, wherein this photosensitive structure includes optical diode.
9. image sensor as claimed in claim 1, wherein also includes metal interconnecting layer, is located at
In this inner layer dielectric layer.
10. image sensor as claimed in claim 1, wherein also include color filter film and
Microlens layer, is arranged on this inner layer dielectric layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104111145 | 2015-04-07 | ||
| TW104111145A TW201637182A (en) | 2015-04-07 | 2015-04-07 | Image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106158889A true CN106158889A (en) | 2016-11-23 |
| CN106158889B CN106158889B (en) | 2019-07-09 |
Family
ID=57346598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510198679.4A Active CN106158889B (en) | 2015-04-07 | 2015-04-24 | Image sensor |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN106158889B (en) |
| TW (1) | TW201637182A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1716627A (en) * | 2004-06-28 | 2006-01-04 | 三星电子株式会社 | Imageing sensor and manufacture method thereof |
| CN101714563A (en) * | 2008-09-29 | 2010-05-26 | 索尼株式会社 | Solid-state imaging device, method of manufacturing the same, and electronic apparatus |
| US20120202307A1 (en) * | 2011-02-09 | 2012-08-09 | Canon Kabushiki Kaisha | Semiconductor device manufacturing method |
-
2015
- 2015-04-07 TW TW104111145A patent/TW201637182A/en unknown
- 2015-04-24 CN CN201510198679.4A patent/CN106158889B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1716627A (en) * | 2004-06-28 | 2006-01-04 | 三星电子株式会社 | Imageing sensor and manufacture method thereof |
| CN101714563A (en) * | 2008-09-29 | 2010-05-26 | 索尼株式会社 | Solid-state imaging device, method of manufacturing the same, and electronic apparatus |
| US20120202307A1 (en) * | 2011-02-09 | 2012-08-09 | Canon Kabushiki Kaisha | Semiconductor device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106158889B (en) | 2019-07-09 |
| TW201637182A (en) | 2016-10-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6171883B1 (en) | Image array optoelectronic microelectronic fabrication with enhanced optical stability and method for fabrication thereof | |
| CN102376724B (en) | Antireflective layer for backside illuminated image sensor and method of manufacturing same | |
| CN102110695B (en) | Solid-state imaging device,manufacturing method and designing method thereof,and electronic device | |
| US8237237B2 (en) | Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus | |
| US7750280B2 (en) | Back-illuminated image sensor and method of fabricating the same | |
| US7208811B2 (en) | Photo-detecting device | |
| US8213085B2 (en) | Image sensor device with high photosensitivity | |
| CN107342300A (en) | Semiconductor devices and the method for manufacturing image sensor devices | |
| US11683599B2 (en) | Image sensors and electronic devices | |
| WO2006028128A1 (en) | Solid-state image pickup element | |
| TW201027730A (en) | Optical waveguides in image sensors | |
| KR102282493B1 (en) | Image sensor and electronic device including the same | |
| EP3340305B1 (en) | Electronic devices and methods of manufacturing the same | |
| JP2014130890A (en) | Photoelectric conversion device | |
| CN100524786C (en) | Image sensor from CMOS transistors, and manufacturing method | |
| TW201125113A (en) | Photoelectric conversion device | |
| US20210288094A1 (en) | Solid-State Image Sensor with Pillar Surface Microstructure and Method of Fabricating the Same | |
| CN106158889A (en) | Image sensor | |
| JP2006196587A (en) | Solid-state image pickup device and manufacturing method thereof | |
| JPS60189258A (en) | Photosensitive device with integrated filter for color separation and method of producing same | |
| KR102105054B1 (en) | Organic photodiodes with wavelength selective electrodes | |
| JP2011258884A (en) | Solid-state imaging device and manufacturing method thereof | |
| JP2011061134A (en) | Semiconductor image sensor | |
| US8847286B2 (en) | Image sensor and method of manufacturing | |
| WO2022261978A1 (en) | Front-illuminated image sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190628 Address after: Hsinchu Science Park, Taiwan, China Patentee after: Lijing Jicheng Electronic Manufacturing Co., Ltd. Address before: Hsinchu Science Park, Taiwan, China Patentee before: Powerflash Technology Corporation |