CN106158828A - The manufacture method of interconnection structure and encapsulating structure between interconnection structure, sheet between sheet - Google Patents
The manufacture method of interconnection structure and encapsulating structure between interconnection structure, sheet between sheet Download PDFInfo
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- CN106158828A CN106158828A CN201510181279.2A CN201510181279A CN106158828A CN 106158828 A CN106158828 A CN 106158828A CN 201510181279 A CN201510181279 A CN 201510181279A CN 106158828 A CN106158828 A CN 106158828A
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Abstract
The invention discloses manufacture method and the encapsulating structure of interconnection structure between interconnection structure, sheet between a kind of.Between this sheet, interconnection structure includes substrate and the first bonding salient point formed over the substrate, it is characterised in that between this sheet, interconnection structure also includes the first 3-D nano, structure being deposited on described first bonding salient point and having electric conductivity.Thus, it is possible to realize the lasting reduction of interlayer pitch, and reduce bonding temperature, improve integrated level.
Description
Technical field
The present invention relates to semiconductor applications, in particular it relates to interconnection structure between a kind of sheet, be used for manufacturing this
The method of interconnection structure and encapsulating structure between sheet.
Background technology
Along with function, the speed of electronic device constantly promote, integrated circuit I/O port density is more and more higher,
Therefore the pitch (i.e. centre-to-centre spacing) between the pad of electronic devices and components the most constantly reduces.Partly lead according to the world
Body technique route map (ITRS) 2011 annual report being pointed out, between typical sheet in 2015, interconnection pitch will fall
As little as 25 μm.
Between traditional sheet, interconnection technique includes solder connection, solid-liquid counterdiffusion interconnection technique, copper-copper (Cu-Cu)
Thermocompression bonding technology etc..There is liquid phase in front two technology in bonding technology, which has limited interconnection pitch
Lasting reduction.And thermocompression bonding technology needs higher bonding temperature (300 DEG C and more than) and higher
Bonding pressure, this may damage electronic device (such as transistor), particularly may damage be applied to
Three-dimensionally integrated ultra-thin chip, the Sensitive Apparatus of MEMS (microelectromechanical systems).Therefore, need badly
Interconnection structure between a kind of sheet that can simultaneously reduce pitch and required bonding temperature.
Summary of the invention
It is an object of the invention to provide and a kind of can be applicable to interconnection structure between three-dimensionally integrated sheet, for making
Make method and the encapsulating structure of interconnection structure between this sheet, to realize the lasting reduction of interlayer pitch, and reduce
Bonding temperature, improves integrated level.
To achieve these goals, the present invention provides interconnection structure between a kind of sheet, interconnection structure bag between this sheet
Including substrate and the first bonding salient point formed over the substrate, between this sheet, interconnection structure also includes being deposited on
Described first is bonded on salient point and has the first 3-D nano, structure of electric conductivity.
Preferably, described first 3-D nano, structure is formed as cotton-shaped or cluster-shaped.
Preferably, described first 3-D nano, structure is formed by least one in following material: copper (Cu),
Aluminum (Al), nickel (Ni), silver (Ag), gold (Au).
The present invention also provides for a kind of encapsulating structure, and this encapsulating structure includes: according to present invention offer
Interconnection structure between sheet；And part to be bonded, this part to be bonded is formed the second bonding salient point, described
Between interconnection structure described substrate on described first bonding salient point by described first 3-D nano, structure
It is bonded bump bonding with described second on described part to be bonded.
Preferably, on the described second bonding salient point of described part to be bonded, deposition has the second three-dimensional manometer knot
Structure；And described first bonding salient point on the described substrate of interconnection structure passes through described first between described
3-D nano, structure and described second 3-D nano, structure are bonded with described second on described part to be bonded
Bump bonding.
Preferably, described second 3-D nano, structure is formed as cotton-shaped or cluster-shaped.
Preferably, described second 3-D nano, structure is formed by least one in following material: copper (Cu),
Aluminum (Al), nickel (Ni), silver (Ag), gold (Au).
Preferably, described part to be bonded is wafer or chip.
The present invention also provides for a kind of for manufacturing the method for interconnection structure between sheet, and the method includes: at substrate
Upper formation is bonded salient point；And deposition has the 3-D nano, structure of electric conductivity on described bonding salient point.
Preferably, the step depositing described 3-D nano, structure on described bonding salient point includes: described
Do not formed on the region of described bonding salient point armor coated on substrate；Deposit described 3-D nano, structure,
So that the 3-D nano, structure deposited covers described protective layer and described bonding salient point；And remove described
Protective layer.
Preferably, the step depositing described 3-D nano, structure on described bonding salient point includes: described
Described 3-D nano, structure is deposited, so that the 3-D nano, structure deposited covers on described substrate on substrate
Do not form the region of described bonding salient point and described bonding salient point；Directly remove and do not formed on described substrate
3-D nano, structure on the region of described bonding salient point.
Preferably, the step depositing described 3-D nano, structure on described bonding salient point includes: described
Described 3-D nano, structure is deposited, so that the 3-D nano, structure deposited covers on described substrate on substrate
Do not form the region of described bonding salient point and described bonding salient point；Formed around described bonding salient point and protect
Sheath, so that described protective layer surrounds the 3-D nano, structure on described bonding salient point and described bonding salient point；
Remove the 3-D nano, structure on the region not forming described bonding salient point on described substrate；And remove institute
State protective layer.
Preferably, the step depositing described 3-D nano, structure on described bonding salient point includes: described
The described bonding salient point of substrate be provided above a template, this template is formed and is bonded salient point phase with described
Corresponding through hole；Described template deposits described 3-D nano, structure, so that the three-dimensional manometer deposited
At least some of of structure arrives on described bonding salient point through described through hole；And remove described template.
Preferably, described 3-D nano, structure is formed as cotton-shaped or cluster-shaped.
Preferably, described 3-D nano, structure is formed by least one in following material: copper (Cu),
Aluminum (Al), nickel (Ni), silver (Ag), gold (Au).
In technique scheme, interconnect owing to using 3-D nano, structure to carry out between sheet, it is thus possible to real
The reduction (being even reduced to submicron-scale) of existing interlayer pitch, improves integrated level, simultaneously because nanometer
Effect can be substantially reduced bonding temperature.Additionally, due to 3-D nano, structure has loose porous feature,
When bonding, each basis nano structured unit can be engaged, inlay and mate each other, thus formed
Mechanical latching so that interconnect more firm stable.Become it addition, 3-D nano, structure has preferable plasticity
Shape ability, once by any external force, will move rapidly, form new surface layer, and this makes bonding
During the planarization demand of substrate and bond area is substantially reduced, because irregular region is permissible
Filled up by the 3-D nano, structure of movement.Meanwhile, the specific surface of the nanostructured of this three-dimensional configuration
Long-pending bigger, the nano effect of little crystal boundary makes atomic diffusion rates increase substantially, thus can improve key
Close speed.Between the sheet that the present invention provides, interconnection structure may be used for the three-dimensionally integrated, also of multilayer chiop stacking
May be used for temperature sensitive MEMS package, it is also possible to, electromigration requirement higher for electric current density
Interconnection etc. between the sheet of high microwave device.
Other features and advantages of the present invention will be described in detail in detailed description of the invention part subsequently.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and constitutes the part of description, with
Detailed description below is used for explaining the present invention together, but is not intended that limitation of the present invention.?
In accompanying drawing:
Fig. 1 is the schematic diagram of interconnection structure between sheet according to the embodiment of the present invention；
Fig. 2 a-2e is the schematic diagram of the technique for forming bonding salient point on substrate；
Fig. 3 be according to the embodiment of the present invention for manufacturing the flow chart of the method for interconnection structure between sheet；
Fig. 4 a-4c is the deposition three-dimensional nano junction on bonding salient point according to one embodiment of the present invention
The process chart of structure；
Fig. 5 a-5b is the deposition three-dimensional nanometer on bonding salient point according to another embodiment of the invention
The process chart of structure；
Fig. 6 a-6d is the deposition three-dimensional nano junction on bonding salient point according to another embodiment of the present invention
The process chart of structure；
Fig. 7 a-7c is the deposition three-dimensional nano junction on bonding salient point according to another embodiment of the invention
The process chart of structure；
Fig. 8 a-8b is the process schematic forming encapsulating structure according to the embodiment of the present invention；
Fig. 9 a-9c is the process schematic forming encapsulating structure according to another embodiment of the present invention；
Figure 10 is the flow chart of interconnecting method between sheet according to the embodiment of the present invention；And
Figure 11 a-11d is according to the process chart of interconnecting method between the sheet of another embodiment of the present invention.
Description of reference numerals
Between 10, interconnection structure 101 substrate 102 first is bonded salient point
103 first 3-D nano, structure 104 insulating medium layer 105 interlayer interconnection lines
106 metal level 107 adhesion layer 108 photoresists
109 protective layer 110 template 111 through holes
20 part 201 second to be bonded bonding salient point 202 second 3-D nano, structures
Detailed description of the invention
Below in conjunction with accompanying drawing, the detailed description of the invention of the present invention is described in detail.It should be appreciated that
Detailed description of the invention described herein is merely to illustrate and explains the present invention, is not limited to the present invention.
Fig. 1 shows the schematic diagram of interconnection structure 10 between sheet according to the embodiment of the present invention.Such as Fig. 1
Shown in, between this sheet, interconnection structure 10 can include substrate 101 and formed on described substrate 101 the
One bonding salient point 102.Formed the material of described substrate 101 can such as include but not limited to following in
One: silicon, glass, gallium nitride (GaN) or GaAs (GaAs) etc..Described first bonding is convex
Point 102 can be any suitable in the metal of bonding, such as, copper (Cu), golden (Au), stannum (Sn),
Aluminum (Al), silver (Ag) etc..Described first bonding salient point 102 can for example, pass through PVD (physics
Vapour deposition) etc. the thin film salient point that deposits of mode, or the salient point formed by plating mode, to this
The present invention is not defined.The number of this first bonding salient point 102 can be one or more.At figure
Between the sheet shown in 1 in interconnection structure 10, it is formed with multiple first bonding salient point on the surface of the substrate 101
102。
The technique preparing the first bonding salient point 102 the most on the substrate 101 is as well known to those skilled in the art
, will illustrate as a example by a kind of example below, it will be understood however, that other are at substrate
The preparation technology forming the first bonding salient point 102 on 101 is all applicable to the present invention.
Fig. 2 a-2e shows the signal of the technique for forming the first bonding salient point 102 on the substrate 101
Figure.First, as shown in Figure 2 a, lay an insulating medium layer 104 on the surface of the substrate 101 (also may be used
Be alternatively referred to as " passivation layer "), wherein, the material forming this insulating medium layer 104 can include but not
Be limited to following in one: silicon dioxide, silicon nitride, BCB (benzocyclobutene) or PI (polyamides
Imines) etc..
Afterwards, as shown in Figure 2 b, described insulating medium layer 104 is arranged interlayer interconnection line 105.?
In a kind of example embodiment, the materials such as Al can be used as interconnection line, and use photoetching, etching
It is patterned etc. technique.It should be appreciated that how to form interlayer interconnection line at insulating medium layer 104
The preparation technology of 105 is to well known to a person skilled in the art, is not described in detail this present invention.
Afterwards, as shown in Figure 2 c, deposition is for the metal level 106 of bonding, and described metal level 106 is such as
For Cu or other metals.In order to increase the adhesion characteristics of described metal level 106, and barrier metal layer 106
And the diffusion between interlayer interconnection line 105, it is preferable that before depositing described metal level 106, first cloth
If one layer of adhesion layer 107 (such as, sputtering TiW (titanium-tungsten) or Ti (titanium) thin film), its
In, described adhesion layer 107 not only covers and is formed without interlayer interconnection line 105 on described insulating medium layer 104
Region, and surround described interlayer interconnection line 105.Afterwards, then deposit on described adhesion layer 107
Described metal level 106.
It follows that as shown in Figure 2 d, can on metal level 106 first bonding salient point 102 to be formed
Bond area on lay photoresist 108, afterwards, to being formed without the first bonding salient point on metal level 106
The nonbonding region of 102 is etched, to remove the adhesion layer on described nonbonding region and metal level.
Afterwards, as shown in Figure 2 e, remove the photoresist 108 on described bond area, thus form the first bonding
Salient point 102.
Turn now also to Fig. 1.As it is shown in figure 1, interconnection structure 10 can also wrap between the sheet of present invention offer
Include the first 3-D nano, structure being deposited on described first bonding salient point 102 and having electric conductivity
103.For example, it is possible to prepare described first 3-D nano, structure 103 by thin-film technique.Described 1st
Dimension nanometer construction 103 can be made up of multiple bases nano structured unit, wherein, and described basis nano junction
Structure unit can for example, nanosphere, nano-particle, nanometer blocks etc..Preferably, these bases receive
The first 3-D nano, structure 103 that rice construction unit is formed can be formed as cotton-shaped or cluster-shaped.Cotton-shaped or
The 3-D nano, structure of cluster-shaped more has loose porous feature, when bonding is squeezed more added with
It is beneficial to each basis nano structured unit be engaged each other, inlay and mate, thus forms machinery and close
Lock.
It addition, described first 3-D nano, structure 103 can have electric conductivity, for example, it is possible to for receiving
Rice metal.Have a lot of metal (such as, gold (Au), silver (Ag), nickel (Ni), copper (Cu), aluminum
(Al) etc.) may be formed with the nanostructured of three-dimensional configuration.
Owing to using 3-D nano, structure to carry out interlayer interconnection, it is thus possible to realize the reduction of interlayer pitch
(being even reduced to submicron-scale), improves integrated level, simultaneously because nano effect can be substantially reduced
Bonding temperature.Additionally, due to 3-D nano, structure has loose porous feature, it is squeezed at bonding
Time each basis nano structured unit can be engaged, inlay and mate each other, thus form machinery and close
Lock so that interconnect more firm stable.It addition, 3-D nano, structure has preferable plastic deformation ability,
Once by any external force, will move rapidly, form new surface layer, it is right that this makes in bonding process
Planarization demand in substrate and bond area is substantially reduced, because irregular region can be by mobile
3-D nano, structure fill up.Meanwhile, the specific surface area of the nanostructured of this three-dimensional configuration is bigger,
The nano effect of little crystal boundary makes atomic diffusion rates increase substantially, thus can improve bonding rate.
Interconnect between sheet additionally, the nano effect of the most a lot of 3-D nano, structures all can largely facilitate.
Fig. 3 show according to the embodiment of the present invention for manufacturing the stream of the method for interconnection structure between sheet
Cheng Tu.As it is shown on figure 3, the method may include that step S101, at substrate (such as, in Fig. 1
Substrate 101) upper form bonding salient point (such as, the first bonding salient point 102 in Fig. 1).Can be by
Described bonding salient point is formed according to the technique shown in Fig. 2 a-Fig. 2 e.It follows that step S102, described
On bonding salient point, deposition has 3-D nano, structure (such as, the one or three wiener in Fig. 1 of electric conductivity
Rice structure 103).
The invention provides multiple for the mode of deposition three-dimensional nanostructured on bonding salient point.Below will
By between the sheet shown in Fig. 1 as a example by interconnection structure 10, in conjunction with Fig. 4 a-4c, Fig. 5 a-5b, Fig. 6 a-6d,
Fig. 7 a-7c is respectively described this several ways.
First, in the first embodiment, described step S102 may include that
1) armor coated 109 are not formed on the region of the first bonding salient point 102 on the substrate 101, example
As, as shown in fig. 4 a.The material of described protective layer 109 can include but not limited to: for photoetching
Various photoresists (such as AZ series, SU8 etc.), have light sensitive characteristic organic insulating medium layer (BCB,
PI) etc..
2) the first 3-D nano, structure 103 is deposited, so that the first 3-D nano, structure 103 deposited
Cover described protective layer 109 and the first bonding salient point 102, as shown in Figure 4 b.Thin film deposition can be used
Technique (including the modes such as evaporation, sputtering, pulsed laser deposition) formation of deposits in vacuum or air
The nanostructured of three-dimensional configuration.
3) described protective layer 109 is removed.Removing method can be wet process (as acetone, isopropanol,
Ethanol Treatment etc.), it is also possible to it is dry way process (argon (Ar) plasma treatment etc.).It should be understood that
, this kind of removing method can not destroy the first three-dimensional manometer knot being positioned on the first bonding salient point 102
Structure.After removing described protective layer 109, it is possible to only retain deposition the first key on the substrate 101
Close the first 3-D nano, structure on salient point 102, as illustrated in fig. 4 c.Thus, complete the present invention to carry
The manufacture of interconnection structure 10 between the sheet of confession.
In the second embodiment, described step S102 may include that
1) the first 3-D nano, structure 103 is deposited on the substrate 101, so that the one or three wiener deposited
Rice structure 103 covers region and the institute not forming described first bonding salient point 102 on described substrate 101
State the first bonding salient point 102, as shown in Figure 5 a.Thin film deposition processes can be used (to include evaporation, spatter
Penetrate, the mode such as pulsed laser deposition) nanostructured of formation of deposits three-dimensional configuration in vacuum or air.
2) directly remove on the region not forming described first bonding salient point 102 on described substrate 101
First 3-D nano, structure.It is for instance possible to use mechanical arm, probe, atomic force microscope location skill
Art peels off the first three-dimensional on the region not forming described first bonding salient point 102 on described substrate 101
Nanostructured, thus only retain the first 3-D nano, structure on the first bonding salient point 102, such as Fig. 5 b
Shown in.Thus, the manufacture of interconnection structure 10 between the sheet that the present invention provides is completed.
In the third embodiment, described step S102 may include that
1) the first 3-D nano, structure 103 is deposited on the substrate 101, so that the one or three wiener deposited
Rice structure 103 covers region and the first key not forming the first bonding salient point 102 on described substrate 101
Close salient point 102, as shown in Figure 6 a.Thin film deposition processes can be used (to include evaporation, sputtering, pulse
The modes such as laser deposition) nanostructured of formation of deposits three-dimensional configuration in vacuum or air.
2) around the first bonding salient point 102, protective layer 109 is formed, so that described protective layer 109 surrounds
The first 3-D nano, structure on described first bonding salient point 102 and described first bonding salient point 102, as
Shown in Fig. 6 b.The material of described protective layer 109 such as includes but not limited to: for the various light of photoetching
Photoresist (such as AZ series, SU8 etc.), there is the organic insulating medium layer (BCB, PI) of light sensitive characteristic
Deng.Thus, it is possible to first removed on the region not forming the first bonding salient point 102 on substrate 101
The when of 3-D nano, structure, the first 3-D nano, structure of the first bonding salient point 102 and top thereof is entered
Row protection, prevents from destroying the first 3-D nano, structure of the first bonding salient point 102 and top thereof.
3) the first three-dimensional manometer on the region not forming the first bonding salient point 102 on substrate 101 is removed
Structure.Chemical attack, physical dry etching and the method such as ultrasonic can be used to remove the one or three wiener
Rice structure.Remove the one or three wiener on the region not forming the first bonding salient point 102 on substrate 101
State after rice structure is as fig. 6 c.
4) described protective layer 109 is removed.The method that can use wet etching removes described protective layer 109.
After removing described protective layer 109, it is possible to only retain deposition the first bonding on the substrate 101 convex
The first 3-D nano, structure on point 102, as shown in fig 6d.Owing to protective layer 109 encloses first
The first 3-D nano, structure on bonding salient point 102, therefore, may remove when removing protective layer 109
Fall part the first 3-D nano, structure, but most of first 3-D nano, structure remains in the first bonding
On salient point 102.Thus, the manufacture of interconnection structure 10 between the sheet that the present invention provides is completed.
In the 4th kind of embodiment, described step S102 may include that
1) template 110 that is provided above at the first bonding salient point 102 of substrate 101 (such as, is passed through
One falsework (not shown) fixes described template 110), this template 110 is formed and described
The through hole 111 that one bonding salient point 102 is corresponding, as shown in Figure 7a.Described template 110 can be hard
Template, such as, steel net template, glass template, alumina formwork, polymethyl methacrylate (PMMA)
Template etc..
2) in described template 110, the first 3-D nano, structure 103 is deposited, so that the deposited the 1st
At least some of of dimension nanometer construction 103 arrives on the first bonding salient point 102 through described through hole 111,
As shown in Figure 7b.Thin film deposition processes can be used (to include evaporation, sputtering, pulsed laser deposition etc.
Mode) nanostructured of formation of deposits three-dimensional configuration in vacuum or air.
3) remove described template 110 and (such as, take described template away by the described falsework of dismounting
110), so, the first 3-D nano, structure through described through hole 111 is retained in the first bonding salient point
On 102, as shown in Figure 7 c.Thus, the manufacture of interconnection structure 10 between the sheet that the present invention provides is completed.
Deposition three-dimensional nanostructured on bonding salient point is all can be implemented in by any of the above embodiment, and
Thus complete the manufacture of interconnection structure between sheet.
Fig. 8 a-8b shows the process schematic forming encapsulating structure according to the embodiment of the present invention.
As shown in Figure 8 a-8b, this encapsulating structure may include that and links mutually between described according to present invention offer
Structure 10；And part 20 to be bonded, this part 20 to be bonded could be formed with the second bonding salient point 201,
Wherein, described second bonding salient point 201 can be corresponding with described first bonding salient point 102.Described
Between interconnection structure 10 described substrate 101 on described first bonding salient point 102 can be by described the
One 3-D nano, structure 103 is bonded salient point 201 with described second on described part 20 to be bonded and is bonded.
Fig. 8 a is illustrated that interconnection structure 10 and encapsulation knot in the bonding process of part 20 to be bonded between sheet
The schematic diagram of structure, Fig. 8 b is illustrated that and completes being bonded of interconnection structure 10 and part 20 to be bonded between sheet
The schematic diagram of encapsulating structure afterwards.Comparison diagram 8a and Fig. 8 b is it can be seen that interconnect between by bonding pad
During structure 10 and part 20 to be bonded form described encapsulating structure, the first 3-D nano, structure 103
Form can change.
In Fig. 8 a, between sheet interconnection structure 10 with in the bonding process of part 20 to be bonded, due to the
The first 3-D nano, structure 103 plastic deformation on one bonding salient point 102 so that this first three-dimensional manometer
Structure 103 is gradually compressed, the most thinning.Now, this is compressed under the extraneous lower temperature effect
First 3-D nano, structure 103 occurs melted, ultimately forms diaphragm type structure reliable, firm, such as figure
Shown in 8b.Owing to this diaphragm type structure is the basic nanostructured list by the first 3-D nano, structure 103
There is melted formation in unit, therefore, this diaphragm type structure has good bond strength, so that sheet
Between can be bonded more securely between interconnection structure 10 with part 20 to be bonded.
Example shown in Fig. 8 a and 8b is only to be tied by the three-dimensional manometer of deposition on the bonding salient point of side
Structure carries out the example being bonded.But the invention is not restricted to this, it is also possible to deposit on the bonding salient point of opposite side
3-D nano, structure is also contacted with each other extruding shape by the 3-D nano, structure on the bonding salient point of both sides afterwards
Interconnect between stratification.As illustrated in fig. 9, on the described second bonding salient point 201 of described part 20 to be bonded
Deposition has the second 3-D nano, structure 202.In this case, as shown in figure 9b, interconnect between described
Described first bonding salient point 102 on the described substrate 101 of structure 10 can be three-dimensional by described first
Nanostructured 103 and described second 3-D nano, structure 202 and described the on described part 20 to be bonded
Two bonding salient points 201 are bonded.The first three-dimensional manometer in bonding process, on the first bonding salient point 102
There is mechanical latching in the second 3-D nano, structure 202 that structure 103 is bonded on salient point 201 with second, makes
Obtain this first 3-D nano, structure 103 and the second 3-D nano, structure 202 is gradually compressed, the most thinning.
Now, under extraneous lower temperature effect, this first 3-D nano, structure 103 and second compressed is three-dimensional
Nanostructured 202 occurs melted, ultimately forms diaphragm type structure reliable, firm, as is shown in fig. 9 c.
Owing to this diaphragm type structure is the basic nano structured unit and second by the first 3-D nano, structure 103
The basic nano structured unit generation mechanical latching of 3-D nano, structure 202 and melted formed, therefore,
This diaphragm type structure has higher bond strength, so that interconnection structure 10 and part to be bonded between sheet
Can be bonded more securely between 20.
It is similar to the first 3-D nano, structure 103 described above, described second 3-D nano, structure 202
Can also be made up of multiple bases nano structured unit, wherein, described basis nano structured unit can be with example
As for nanosphere, nano-particle, nanometer blocks etc..And preferably, by these basis nanostructured lists
The second 3-D nano, structure 202 that unit is formed can be formed as cotton-shaped or cluster-shaped.Additionally, described second
3-D nano, structure 202 can be formed by least one in following material: copper (Cu), aluminum (Al),
Nickel (Ni), silver (Ag), gold (Au).
Between provided by the present invention, interconnection structure 10 both may be used for forming wafer scale interconnection, it is also possible to
For forming chip-scale interconnection.Therefore, described part to be bonded 20 can be wafer or chip.
Figure 10 shows the flow chart of interconnecting method between sheet according to the embodiment of the present invention.Such as Fig. 9
Shown in, the method may include that step S201, forms the first bonding salient point 102 on the substrate 101.
The side that the method for salient point 102 is identical can be bonded according to the formation first that Fig. 2 a-2e above in conjunction describes
Method realizes.Afterwards, step S202, it is bonded deposition on salient point 102 described first and there is electric conductivity
First 3-D nano, structure 103 of energy.It follows that step S203, utilize described first three-dimensional manometer knot
Described first bonding salient point 102 is bonded salient point 201 with second formed on part 20 to be bonded by structure 103
It is bonded, so that described substrate 101 interconnects with described part 20 to be bonded.
It is bonded by 3-D nano, structure, is possible not only to reduce interlayer pitch and (is even reduced to sub-micro
Metrical scale), improve integrated level, and without higher bonding temperature and pressure.In the present invention, key
The atmosphere of conjunction process can include but not limited to: vacuum, nitrogen, reducibility gas (H2, HCOOH
Deng).
In one embodiment, described step S202 may include that 1) do not formed on the substrate 101
First bonding salient point 102 region on armor coated 109；2) described first is deposited on the substrate 101
3-D nano, structure 103, so that the first 3-D nano, structure 103 deposited covers described protective layer 109
With described first bonding salient point 102.Further, between described, interconnecting method can also include removing described guarantor
The step of sheath 109.Above-mentioned steps 1) and step 2) with combine the step 1 that Fig. 4 a and Fig. 4 b describe)
With step 2) identical.
But, the method institute for manufacturing interconnection structure 10 between sheet described by Fig. 4 a-4c above in conjunction
Except for the difference that, between the sheet that the present invention provides in interconnecting method, can be according to the formed on substrate 101
The thickness of one bonding salient point 102 determines when remove described protective layer 109.
Such as, in the case of the described first thinner thickness being bonded salient point 102, (such as, PVD is passed through
The thin film salient point deposited etc. mode), the district of the first bonding salient point 102 can not formed on the substrate 101
Thicker protective layer 109 is coated, so that described first bonding salient point 102 is relative to described protective layer on territory
109 cave inward, such as, shown in Fig. 4 a.Afterwards, described one or three wiener is deposited on the substrate 101
Rice structure 103, so that the first 3-D nano, structure 103 deposited covers described protective layer 109 and institute
State the first bonding salient point 102, as shown in Figure 4 b.After this, and before carrying out step S203 (i.e.,
Before bonding), described protective layer 109 is removed, as illustrated in fig. 4 c.
And (such as, pass through electro-plating method in the case of the thickness of described first bonding salient point 102 is thicker
Form the salient point that this thickness is thicker), the first bonding salient point 102 can not formed on the substrate 101
(thickness of this protective layer 109 is well below the first bonding salient point to coat relatively thin protective layer 109 on region
The thickness of 102) so that described first bonding salient point 102 is relative to described protective layer 109 outwardly,
Such as, shown in Figure 11 a.Afterwards, deposit described first 3-D nano, structure 103 on the substrate 101,
So that the first 3-D nano, structure 103 deposited covers described protective layer 109 and described first bonding is convex
Point 102, as shown in figure 11b.Afterwards, step S203 is first carried out, i.e. advanced line unit closes, such as Figure 11 c
Shown in.After completing step S203, then remove described protective layer 109, to remove nonbonding region
On 3-D nano, structure, as illustrated in fig. 11d.Owing to the thickness of the first bonding salient point 102 is relatively big, because of
And can ensure that after bonding, nonbonding region is left enough working places non-to remove these
Protective layer 109 in bond area.Can the side such as or plasma bombardment ultrasonic for example with chemical reagent
Method removes described protective layer 109, thus removes the 3-D nano, structure on nonbonding region.
In another embodiment, described step S202 may include that 1) deposit on the substrate 101
First 3-D nano, structure 103, so that the first 3-D nano, structure 103 deposited covers described substrate
The region of described first bonding salient point 102 and described first bonding salient point 102 is not formed on 101；2)
Directly remove first on the region not forming described first bonding salient point 102 on described substrate 101 three-dimensional
Nanostructured.Above-mentioned steps 1)-step 2) realize with above in conjunction with the mistake described by Fig. 5 a-Fig. 5 b
Journey and technique are consistent, and to this, the present invention does not repeats at this.
In another embodiment, described step S202 may include that 1) on described substrate 101
Deposit described first 3-D nano, structure 103, so that the first 3-D nano, structure 103 deposited covers
The region of described first bonding salient point 102 and described first bonding salient point is not formed on described substrate 101
102；2) it is bonded formation protective layer 109 around salient point 102 described first, so that described protective layer 109
Surround the first 3-D nano, structure on described first bonding salient point 102 and described first bonding salient point 102
103；3) first on the region not forming described first bonding salient point 102 on described substrate 101 is removed
3-D nano, structure；And 4) remove described protective layer 109.Above-mentioned steps 1)-step 4) reality
Now with consistent above in conjunction with the process described by Fig. 6 a-Fig. 6 d and technique, to this, the present invention is at this not
Repeat.
In another embodiment, described step S202 may include that 1) at described substrate 101
First bonding salient point 102 be provided above a template 110, this template 110 is formed and described first
The through hole 111 that bonding salient point 102 is corresponding；2) in described template 110, described one or three wiener is deposited
Rice structure 103, so that the first 3-D nano, structure 103 deposited is at least some of through described logical
Hole 111 arrives on described first bonding salient point 102；And 3) remove described template 110.Above-mentioned step
Rapid 1)-step 3) realize with consistent above in conjunction with the process described by Fig. 7 a-Fig. 7 c and technique,
To this, the present invention does not repeats at this.
Between according to the sheet of another embodiment of the present invention in interconnecting method, the method can also include:
Utilizing described first 3-D nano, structure 103, described first bonding salient point 102 is bonded with described second
Before salient point 201 carries out the step being bonded, first at the described second bonding salient point of described part 20 to be bonded
On 201, deposition has the second 3-D nano, structure 202 of electric conductivity；Afterwards, described first is recycled
3-D nano, structure 103 and described second 3-D nano, structure 202 by described first bonding salient point 102 with
Described second bonding salient point 201 is bonded, as shown in Fig. 9 a-9c, 11d.
It should be appreciated that deposit described second 3-D nano, structure 202 on the second bonding salient point 201
Method and technique with described above first bonding salient point 102 on deposit the first 3-D nano, structure
Method and the technique of 103 are identical, and to this, the present invention does not repeats at this.
In sum, in the present invention, 3-D nano, structure is used to carry out interconnecting between sheet not being only sufficient to realize layer
Between the reduction (being even reduced to submicron-scale) of pitch, improve integrated level, simultaneously because nano effect
Bonding temperature can be substantially reduced.Additionally, due to the characteristic that 3-D nano, structure self is had, use
It carries out between sheet interconnection and is also equipped with following advantage:
1) mechanical latching: owing to the deposition of 3-D nano, structure exists gap, and in bonding process, on
The 3-D nano, structure of lower surface there will be and is engaged between gap and gap, inlays and mates, so that
It is bonded more stable, firm.
2) plastic deformation: after bulky metals forms 3-D nano, structure, due to dimensional effect, metal
Proportion shared by surface atom is increasing, and its deformation mechanism is increasingly affected by the motion of top layer atom.
Once by any external force, outer layer atom will promptly move.Now, nano metal just has concurrently
The characteristic of solid and liquid.After extrusion, top layer atom moves rapidly, defines new surface layer.
Bonding process is exactly that the characteristic of the rapid movement that make use of upper and lower two-layer nano metal connects.Further,
Owing to 3-D nano, structure is easily generated plastic deformation so that for substrate and bond area in bonding process
Planarization demand is substantially reduced, because irregular region can be filled out by the 3-D nano, structure of movement
Mend.
3) defect is replied: the 3-D nano, structure formed due to membrane deposition method, can form cluster,
A lot of defects, such as fault, twin etc. is there is between these clusters.The free energy of this kind of defect is very
Height, under extraneous pressure and temperature effect, adjacent fault (dislocation) defect interconnects, and gradually returns
Multiple, free energy reduces, and therefore completes bonding.
4) grain boundary decision: the nanostructured specific surface area of three-dimensional configuration is big, and crystal grain is little, crystal boundary is many, because of
This contact interface of nano-particle in bonding process is many, and atom expands along the crystal boundary of the contact surface of nano-particle
Dissipate more a lot than the speed that the contact surface of body material spreads along interface.
5) shell melts: 3-D nano, structure has melting phenomenon because of its nano effect, the surrounding of its structure,
Therefore there will be nanoparticle edge at bonding process to merge into each other, thus be bonded.
Between the sheet that the present invention provides, interconnection structure may be used for the three-dimensionally integrated of multilayer chiop stacking, it is also possible to
For temperature sensitive MEMS package, it is also possible to, electromigration higher for electric current density requires high
Microwave device sheet between interconnection etc..
The preferred embodiment of the present invention is described in detail above in association with accompanying drawing, but, the present invention does not limit
Detail in above-mentioned embodiment, in the technology concept of the present invention, can be to the present invention
Technical scheme carry out multiple simple variant, these simple variant belong to protection scope of the present invention.
It is further to note that each the concrete technical characteristic described in above-mentioned detailed description of the invention,
In the case of reconcilable, can be combined by any suitable means.In order to avoid unnecessary
Repeating, various possible compound modes are illustrated by the present invention the most separately.
Additionally, combination in any can also be carried out between the various different embodiment of the present invention, as long as its
Without prejudice to the thought of the present invention, it should be considered as content disclosed in this invention equally.
Claims (15)
1. an interconnection structure between sheet, between this sheet, interconnection structure includes substrate and is formed over the substrate
The first bonding salient point, it is characterised in that between this sheet, interconnection structure also includes being deposited on described first bonding
On salient point and there is the first 3-D nano, structure of electric conductivity.
Interconnection structure between the most according to claim 1, it is characterised in that described first is three-dimensional
Nanostructured is formed as cotton-shaped or cluster-shaped.
Interconnection structure between the most according to claim 1 and 2, it is characterised in that described first
3-D nano, structure is formed by least one in following material: copper (Cu), aluminum (Al), nickel (Ni),
Silver (Ag), gold (Au).
4. an encapsulating structure, it is characterised in that this encapsulating structure includes:
According to interconnection structure between the sheet described in any claim in claim 1-3；And
Part to be bonded, this part to be bonded is formed the second bonding salient point, the institute of interconnection structure between described
State the described first bonding salient point on substrate by described first 3-D nano, structure and described part to be bonded
On described second bonding bump bonding.
Encapsulating structure the most according to claim 4, it is characterised in that at described part to be bonded
On described second bonding salient point, deposition has the second 3-D nano, structure；And
Between described, the described first bonding salient point on the described substrate of interconnection structure is by the described 1st
Dimension nanometer construction and described second 3-D nano, structure are bonded convex with described second on described part to be bonded
Point bonding.
Encapsulating structure the most according to claim 5, it is characterised in that described second three-dimensional manometer
Structure is formed as cotton-shaped or cluster-shaped.
Encapsulating structure the most according to claim 5, it is characterised in that described second three-dimensional manometer
Structure is formed by least one in following material: copper (Cu), aluminum (Al), nickel (Ni), silver (Ag),
Gold (Au).
8. according to the encapsulating structure described in any claim in claim 4-7, it is characterised in that
Described part to be bonded is wafer or chip.
9. one kind is used for manufacturing the method for interconnection structure between sheet, it is characterised in that the method includes:
Substrate is formed bonding salient point；And
On described bonding salient point, deposition has the 3-D nano, structure of electric conductivity.
Method the most according to claim 9, it is characterised in that deposit on described bonding salient point
The step of described 3-D nano, structure includes:
Do not formed on the region of described bonding salient point armor coated over the substrate；
Deposit described 3-D nano, structure so that the 3-D nano, structure that deposited cover described protective layer and
Described bonding salient point；And
Remove described protective layer.
11. methods according to claim 9, it is characterised in that deposit on described bonding salient point
The step of described 3-D nano, structure includes:
Deposit described 3-D nano, structure over the substrate, so that the 3-D nano, structure deposited covers
The region of described bonding salient point and described bonding salient point is not formed on described substrate；
Directly remove the 3-D nano, structure on the region not forming described bonding salient point on described substrate.
12. methods according to claim 9, it is characterised in that deposit on described bonding salient point
The step of described 3-D nano, structure includes:
Deposit described 3-D nano, structure over the substrate, so that the 3-D nano, structure deposited covers
The region of described bonding salient point and described bonding salient point is not formed on described substrate；
Around described bonding salient point formed protective layer so that described protective layer surround described bonding salient point and
3-D nano, structure on described bonding salient point；
Remove the 3-D nano, structure on the region not forming described bonding salient point on described substrate；And
Remove described protective layer.
13. methods according to claim 9, it is characterised in that deposit on described bonding salient point
The step of described 3-D nano, structure includes:
Described substrate described bonding salient point be provided above a template, this template is formed with described
The through hole that bonding salient point is corresponding；
Described template deposits described 3-D nano, structure, so that the 3-D nano, structure deposited is extremely
A few part arrives on described bonding salient point through described through hole；And
Remove described template.
14. according to the method described in any claim in claim 9-13, it is characterised in that institute
State 3-D nano, structure and be formed as cotton-shaped or cluster-shaped.
15. according to the method described in any claim in claim 9-13, it is characterised in that institute
State 3-D nano, structure to be formed by least one in following material: copper (Cu), aluminum (Al), nickel (Ni),
Silver (Ag), gold (Au).
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666297A (en) * | 2018-05-16 | 2018-10-16 | 清华大学 | A kind of cryotronics interconnection material and preparation method thereof and cryotronics interconnecting method |
| CN111071987A (en) * | 2019-12-30 | 2020-04-28 | 青岛歌尔智能传感器有限公司 | Packaging method and packaging structure of micro-electromechanical system sensor |
| CN112440025A (en) * | 2019-09-02 | 2021-03-05 | 清华大学 | Double-sided micro-nano composite preformed soldering lug for electronic device and low-temperature interconnection method |
| CN115101507A (en) * | 2022-06-14 | 2022-09-23 | 北京理工大学 | Ultra-narrow pitch nt-Cu/nano composite Ag-based micro-bump interconnection structure and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101317255A (en) * | 2005-12-22 | 2008-12-03 | 英特尔公司 | Nanostructure-based package interconnect |
| CN201845754U (en) * | 2010-07-19 | 2011-05-25 | 江阴长电先进封装有限公司 | Inverted chip packaging structure using carbon nano tube clusters as chip salient points |
| JP2011119539A (en) * | 2009-12-04 | 2011-06-16 | Fujitsu Ltd | Bump structure and method of manufacturing the same, and electronic apparatus and method of manufacturing the same |
| TW201243968A (en) * | 2011-04-29 | 2012-11-01 | Ind Tech Res Inst | Micro bump and method for forming the same |
| CN104201121A (en) * | 2014-09-17 | 2014-12-10 | 北京理工大学 | Method for forming copper pillar and bump package structure |
-
2015
- 2015-04-16 CN CN201510181279.2A patent/CN106158828A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101317255A (en) * | 2005-12-22 | 2008-12-03 | 英特尔公司 | Nanostructure-based package interconnect |
| JP2011119539A (en) * | 2009-12-04 | 2011-06-16 | Fujitsu Ltd | Bump structure and method of manufacturing the same, and electronic apparatus and method of manufacturing the same |
| CN201845754U (en) * | 2010-07-19 | 2011-05-25 | 江阴长电先进封装有限公司 | Inverted chip packaging structure using carbon nano tube clusters as chip salient points |
| TW201243968A (en) * | 2011-04-29 | 2012-11-01 | Ind Tech Res Inst | Micro bump and method for forming the same |
| CN104201121A (en) * | 2014-09-17 | 2014-12-10 | 北京理工大学 | Method for forming copper pillar and bump package structure |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666297A (en) * | 2018-05-16 | 2018-10-16 | 清华大学 | A kind of cryotronics interconnection material and preparation method thereof and cryotronics interconnecting method |
| CN108666297B (en) * | 2018-05-16 | 2020-07-10 | 清华大学 | Low-temperature electronic interconnection material, preparation method thereof and low-temperature electronic interconnection method |
| CN112440025A (en) * | 2019-09-02 | 2021-03-05 | 清华大学 | Double-sided micro-nano composite preformed soldering lug for electronic device and low-temperature interconnection method |
| CN111071987A (en) * | 2019-12-30 | 2020-04-28 | 青岛歌尔智能传感器有限公司 | Packaging method and packaging structure of micro-electromechanical system sensor |
| CN115101507A (en) * | 2022-06-14 | 2022-09-23 | 北京理工大学 | Ultra-narrow pitch nt-Cu/nano composite Ag-based micro-bump interconnection structure and preparation method thereof |
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