CN106154674B - Display device - Google Patents
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- CN106154674B CN106154674B CN201510182273.7A CN201510182273A CN106154674B CN 106154674 B CN106154674 B CN 106154674B CN 201510182273 A CN201510182273 A CN 201510182273A CN 106154674 B CN106154674 B CN 106154674B
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- 239000000758 substrate Substances 0.000 claims abstract description 40
- 230000011514 reflex Effects 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims description 41
- 239000004020 conductor Substances 0.000 claims description 36
- 230000005684 electric field Effects 0.000 claims description 20
- 238000009413 insulation Methods 0.000 claims description 5
- 239000003094 microcapsule Substances 0.000 abstract description 18
- 239000010408 film Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 230000002159 abnormal effect Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 230000005611 electricity Effects 0.000 description 4
- 238000001962 electrophoresis Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- -1 when in use Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
- G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/3433—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices
- G09G3/344—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices based on particles moving in a fluid or in a gas, e.g. electrophoretic devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Electrochemistry (AREA)
- Molecular Biology (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
The invention discloses a kind of display devices, include transparent substrates, multiple virtual pixels, perimeter circuit layer and display element layer.Virtual pixel is set on transparent substrates.Each virtual pixel includes dummy pattern control layer.Perimeter circuit layer is set on transparent substrates, and the voltage for applying same polarity gives dummy pattern control layer.Display element layer covers transparent substrates and virtual pixel.Perimeter circuit layer and dummy pattern control layer separated by gap, this gap allow light to reflex to transparent substrates from display element layer.Display device according to the present invention can watch the display element layer above gap from the back side of transparent substrates, to observe the color of microcapsules in display element layer, and judge to damage position by the difference of color or exception.
Description
Technical field
The present invention relates to a kind of display devices, and a kind of display device of in particular to observable damage position.
Background technique
Typical electrophoretic display apparatus includes electrophoresis layer and thin-film transistor array base-plate.Electrophoresis layer is set to film crystalline substance
In body pipe array substrate, when in use, thin-film transistor array base-plate can produce electric field, to control the microcapsules in electrophoresis layer
White charged particles and charged black particles are mobile, to show picture.
Thin-film transistor array base-plate includes multiple display pixels and multiple virtual pixels (dummy pixel), these
Virtual pixel surrounds display pixel, and allows the inner annular zone of display element layer that same color is presented, and is visually formed outer
Frame.
It in general, can be from the micro- glue of overleaf observing of glass substrate when the damage of the route of thin-film transistor array base-plate
The color of capsule, and judge to be the damage of which route by the exception of color.However, in order to allow the entire outer of display element layer
Annular section forms continuous outline border pattern, and producer can be covered with metal electrode below the inner annular zone, entire to control
The microcapsules of inner annular zone.Under this structure, when the damage of the route of thin-film transistor array base-plate, due to metal electricity
Polar system is between display element layer and glass substrate, so can not watch from the glass substrate back side micro- in display element layer
Capsule, and can not learn which route and damage.
Summary of the invention
In consideration of it, it is an object of the present invention to provide a kind of display devices of observable damage position.
In order to achieve the above object, according to embodiment of the present invention, a kind of display device includes transparent substrates, more
A virtual pixel, perimeter circuit layer and display element layer.Virtual pixel is set on transparent substrates.Each virtual pixel includes
Dummy pattern control layer.Perimeter circuit layer is set on transparent substrates, and the voltage for applying same polarity is controlled to dummy pattern
Layer.Display element layer covers transparent substrates and virtual pixel.Perimeter circuit layer and dummy pattern control layer separated by gap, around here
Gap allows light to reflex to transparent substrates from display element layer.
In one or more embodiments of the invention, virtual pixel includes at least one electric connection structure, connection
Dummy pattern control layer and perimeter circuit layer simultaneously pass through gap.
In one or more embodiments of the invention, perimeter circuit layer and dummy pattern control layer are along a first direction
Arrangement, and the quantity of electric connection structure be it is multiple, these electric connection structures are arranged along second direction, first direction and the
Two directions are substantially perpendicular.
In one or more embodiments of the invention, adjacent two electric connection structure phase compartment in a second direction
Away from this spacing is less than or equal to 20 microns.
In one or more embodiments of the invention, electric connection structure includes the first conductor for being connected and extremely
Few second conductor.The length direction of first conductor is substantially parallel to first direction.The length direction essence of second conductor
On be parallel to second direction.
In one or more embodiments of the invention, electric connection structure is L-shaped structure.
In one or more embodiments of the invention, electric connection structure is T-shaped structure.
In one or more embodiments of the invention, the gap of electric connection structure exposed portion.
In one or more embodiments of the invention, a part of display element layer is located above gap and by electrical property
The electric field controls of connection structure.
In one or more embodiments of the invention, display device also includes multiple display pixels, is set to light transmission
On substrate, and shown element layer covering.These virtual pixels surround these display pixels jointly, and at least two display pixels are applied
Add the voltage of opposed polarity.
In one or more embodiments of the invention, at least one of virtual pixel includes thin film transistor (TFT), film
Transistor and dummy pattern control layer are insulation, wherein a part for the display element layer being located above virtual pixel is by virtual
The electric field controls of pattern control layer.
In the above-described embodiment, due to being located at perimeter circuit layer and dummy pattern control layer phase compartment by virtual pixel
Gap, and this gap allows light to reflex to transparent substrates from display element layer, therefore, testing staff can see from the back side of transparent substrates
See the display element layer above gap, so as to the color of microcapsules in the overleaf observing display element layer by transparent substrates,
And judge to damage position by the difference of color or exception.
The above is used merely to explain the problem of present invention is to be solved, technical means to solve problem and its generation
Effect etc., detail of the invention will be discussed in detail in embodiment and relevant drawings below.
Detailed description of the invention
For above and other purpose, feature, advantage and embodiment of the invention can be clearer and more comprehensible, appended attached drawing is said
It is bright as follows:
Fig. 1 is the diagrammatic cross-section according to the display device of one embodiment of the present invention；
Fig. 2 is the local overlooking schematic diagram according to the thin-film transistor array base-plate of one embodiment of the present invention；
The thin-film transistor array base-plate that Fig. 3 is Fig. 2 is along the diagrammatic cross-section of 3-3 line；
The thin-film transistor array base-plate that Fig. 4 is Fig. 2 is along the diagrammatic cross-section of 4-4 line；
Fig. 5 is the local overlooking schematic diagram according to the thin-film transistor array base-plate of another embodiment of the present invention；
Fig. 6 is the local overlooking schematic diagram according to the thin-film transistor array base-plate of another embodiment of the present invention；With
And
Fig. 7 is the local overlooking schematic diagram according to the thin-film transistor array base-plate of another embodiment of the present invention.
Specific embodiment
Multiple embodiments of the invention will be disclosed with attached drawing below, as clearly stated, many concrete details will
It is explained in the following description.However, those skilled in the art are it should be appreciated that in some embodiments of the present invention, this
A little concrete details are not necessary, therefore are not applied to the limitation present invention.In addition, for the sake of simplifying attached drawing, it is some known used
Structure will be described in a manner of simply illustrating in the accompanying drawings with element.
Fig. 1 is the diagrammatic cross-section according to the display device of one embodiment of the present invention.As shown in Figure 1, display device
Include thin-film transistor array base-plate 10 and display element layer 20.Display element layer 20 is set to thin-film transistor array base-plate
On 10, and driven by thin-film transistor array base-plate 10 to show picture.For example, display element layer 20 can be electrophoresis layer,
It includes multiple microcapsules 21.Each microcapsules 21 include multiple light charged particles 22 and multiple dark charged particles 23.
Light charged particle 22 is different with the charge of 23 bands of dark charged particle, and can be by the electric field of thin-film transistor array base-plate 10
Attract or repel, and be moved to specific position, with display pattern.
Fig. 2 is the local overlooking schematic diagram according to the thin-film transistor array base-plate 10 of one embodiment of the present invention.Such as
Shown in Fig. 2, thin-film transistor array base-plate 10 include transparent substrates 100, multiple virtual pixels 200, perimeter circuit layer 300 and
Multiple display pixels 400, multiple data lines 500 and multiple scan lines 600.Virtual pixel 200, perimeter circuit layer 300 and aobvious
Show that pixel 400 is set on transparent substrates 100, wherein these virtual pixels 200 surround these display pixels 400 jointly, and all
Side line layer 300 surrounds these virtual pixels 200.In other words, annular patterns are collectively formed in virtual pixel 200, and surround institute
There is display pixel 400.Perimeter circuit layer 300 also forms annular patterns, and surrounds all virtual pixels 200.Multiple data lines 500
And multiple scan lines 600 are for driving display pixel 400 to show picture.At least the two of display pixel 400 is applied difference
Polar voltage, so that the microcapsules 21 of the display element layer 20 above it presentation different colours (as shown in Figure 1), to show
Required pattern.
As shown in Fig. 2, each virtual pixel 200 includes dummy pattern control layer 210.Dummy pattern control layer 210 is electrically
It is connected to perimeter circuit layer 300.Perimeter circuit layer 300 is used to apply the voltage of same polarity to the virtual of all virtual pixels 200
Pattern control layer 210, so that the microcapsules 21 of the display element layer 20 of 210 top of all dummy pattern control layers (see figure
1) same color can be presented, to form continuous outline border pattern.
As shown in Fig. 2, the 210 separated by gap G of dummy pattern control layer of perimeter circuit layer 300 and all virtual pixels 200.
Display element layer 20 (seeing Fig. 1) covers transparent substrates 100, virtual pixel 200 and display pixel 400, and partial aobvious
Show that element layer 20 is located above clearance G.This gap G allows light to reflex to transparent substrates 100 from display element layer 20.Such one
Come, testing staff can be from the back side of transparent substrates 100 (that is, back to virtual pixel 200, perimeter circuit layer 300 and display pixel
400 surface) display element layer 20 above clearance G is watched, thus above by the overleaf observing clearance G of transparent substrates 100
Display element layer 20 in microcapsules 21 color, and by the difference of color or abnormal judge to damage position.
In some embodiments, as shown in Fig. 2, virtual pixel 200 includes electric connection structure 220.It is electrically connected knot
Structure 220 passes through clearance G and connects dummy pattern control layer 210 and perimeter circuit layer 300, and whereby, perimeter circuit layer 300 can pass through
Electric connection structure 220 applies voltage to dummy pattern control layer 210, to control the display member of all 200 tops of virtual pixel
Same color can be presented in the microcapsules 21 (seeing Fig. 1) of part layer 20, to form continuous outline border pattern.
Transparent substrates 100, electric connection structure 220 are reflexed to from display element layer 20 in order to allow light through clearance G
The clearance G of exposed portion.In this way, which even if electric connection structure 220 passes through clearance G to be electrically connected dummy pattern control layer
210 with perimeter circuit layer 300, testing staff still can be from the face of the microcapsules 21 above the overleaf observing clearance G of transparent substrates 100
Color, and judge to damage position by the difference of color or exception.
Further, since electric connection structure 220 passes through clearance G, and part display element layer 20 is located above clearance G, institute
With the part display element layer 20 when perimeter circuit layer 300 applies voltage to electric connection structure 220, above clearance G
It can be by the electric field controls of electric connection structure 220, and as suffered by electric connection structure 220 and dummy pattern control layer 210
Voltage is identical, so the part display element layer 20 being located above clearance G and the part for being located at 210 top of dummy pattern control layer
Same color can be presented in display element layer 20, and continuous outline border pattern is collectively formed.
In some embodiments, as shown in Fig. 2, the part display element layer 20 of 200 top of virtual pixel (sees figure
1) by the electric field controls of dummy pattern control layer 210.Virtual pixel 200 may include thin film transistor (TFT) 230.Dummy pattern control layer
210 include pixel electrode 212.Thin film transistor (TFT) 230 connects data line 500 and scan line 600, but thin film transistor (TFT) 230 and void
Quasi- pattern control layer 210 is insulation.Due in virtual pixel 200, the pixel electrode 212 of dummy pattern control layer 210 with
Thin film transistor (TFT) 230 is insulation, without being controlled by thin film transistor (TFT) 230.On the contrary, dummy pattern control layer 210
It is electrically connected perimeter circuit layer 300, and is controlled by perimeter circuit layer 300.Therefore, perimeter circuit layer 300 can be by virtual
Pattern control layer 210, the part display element layer 20 of 200 top of control virtual pixel.
When detecting display device, testing staff can mark in transparent substrates frontside edge, when testing staff observes certain
One data line, 500 failure, and when the display element layer 20 for the top of multiple display pixels 400 for causing it to connect shows abnormal,
Testing staff need to judge that these display pixels 400 are corresponding to which mark.However, due to display pixel 400 and transparent substrates
Frontside edge has still been separated by virtual pixel 200, so the display pixel 400 for being difficult to accurate judgement exception is corresponding to which mark.
Therefore, in some embodiments, testing staff can be initially switched off the electric connection structure 220 of virtual pixel 200, so that virtual representation
Element 200 insulate with perimeter circuit layer 300.Then, testing staff can in a manner of laser welding switch on pixel electrode 212 and film
Transistor 230, so at this point, data line 500 can control dummy pattern control layer 210 by thin film transistor (TFT) 230.Therefore, when
When data line 500 is abnormal, the display element layer 20 of 210 top of dummy pattern control layer can also be in abnormal show, to be conducive to inspection
Survey personnel judge corresponding which mark to transparent substrates frontside edge of the display element layer 20 of abnormal show, to help to judge
Any data line 500 failure.
For example, grid, source electrode and the conductive layer of drain electrode for forming thin film transistor (TFT) 230 are located at dummy pattern control layer
210 lower section, and this conductive layer and dummy pattern control layer 210 are separated and insulated by insulating materials.When desire switch on pixel
When electrode 212 and thin film transistor (TFT) 230, user can punch the insulation material of 212 lower section of pixel electrode in a manner of laser welding
Material, and the conductive layer for the grid to form thin film transistor (TFT) 230 is made to be electrically connected at pixel electrode 212.In this way, film crystal
The i.e. controllable dummy pattern control layer 210 of pipe 230, so that the signal of data line 500 is capable of providing to pixel electrode 212.
Portion is in dividing embodiment, as shown in Fig. 2, display pixel 400 may include that display pattern control layer 410 and film are brilliant
Body pipe 430.Display pattern control layer 410 may include pixel electrode 412.Thin film transistor (TFT) 430 be electrically connected at data line 500 with
Scan line 600.The conductive layer for forming the grid of thin film transistor (TFT) 430 is electrically connected at the pixel electricity of display pattern control layer 410
Pole 412, so thin film transistor (TFT) 430 can control display pattern control layer 410.
Furthermore, it is understood that seeing Fig. 3, this figure is that the thin-film transistor array base-plate 10 of Fig. 2 shows along the section of 3-3 line
It is intended to.As shown in figure 3, display pixel 400 also comprising the first insulating layer 440, intermediate conductive layer 450, second insulating layer 460 and
Bottom conductive layer 470.Bottom conductive layer 470, second insulating layer 460, intermediate conductive layer 450, the first insulating layer 440 are schemed with display
Case control layer 410 is sequentially laminated on transparent substrates 100.Intermediate conductive layer 450 is located at bottom conductive layer 470 and display pattern control
Between preparative layer 410, and bottom conductive layer 470 is electrically connected display pattern control layer 410.The current potential of intermediate conductive layer 450 is visual
It is different from the current potential of bottom conductive layer 470 and display pattern control layer 410 for benchmark current potential so that intermediate conductive layer 450 with
Bottom conductive layer 470 can produce capacitor between the two, and intermediate conductive layer 450 and display pattern control layer 410 can produce separately
One capacitor is between the two.Bottom conductive layer 470 includes gate electrode, and bottom conductive layer 470 connects scan line 600 and (can join
Read Fig. 2).Intermediate conductive layer 450 includes drain electrode and source electrode, and intermediate conductive layer 450 connects data line 500 and (can join
Read Fig. 2).It also may include semiconductor layer (being not shown in this figure) between bottom conductive layer 470 and intermediate conductive layer 450, partly lead
Body layer, the gate electrode of bottom conductive layer 470, can be collectively formed with the drain electrode of intermediate conductive layer 450 and source electrode it is thin
Film transistor 430 (sees Fig. 2).Display pattern control layer 410 extends partially through the first insulating layer 440 and second insulating layer
460 and be electrically connected bottom conductive layer 470.Therefore, the pixel electrode 412 (seeing Fig. 2) of display pattern control layer 410 is electrical
It is connected to the gate electrode of bottom conductive layer 470, so as to be controlled by thin film transistor (TFT) 430.
The thin-film transistor array base-plate 10 that Fig. 4 is Fig. 2 is along the diagrammatic cross-section of 4-4 line.As shown in figure 4, virtual representation
Element 200 also includes the first insulating layer 240, intermediate conductive layer 250, second insulating layer 260 and bottom conductive layer 270.It leads bottom
Electric layer 270, second insulating layer 260, intermediate conductive layer 250, the first insulating layer 240 are sequentially laminated with dummy pattern control layer 210
In on transparent substrates 100.Bottom conductive layer 270 includes gate electrode, and bottom conductive layer 270 connects scan line 600 and (sees
Fig. 2).Intermediate conductive layer 250 includes drain electrode and source electrode, and intermediate conductive layer 250 connects data line 500 and (sees
Fig. 2).It also may include semiconductor layer (being not shown in this figure), semiconductor between bottom conductive layer 270 and intermediate conductive layer 250
Film can be collectively formed with the drain electrode of intermediate conductive layer 250 and source electrode in layer, the gate electrode of bottom conductive layer 270
Transistor 230 (sees Fig. 2).The completely separated dummy pattern control layer 210 of first insulating layer 240 and intermediate conductive layer 250, make
It obtains dummy pattern control layer 210 and 250 phase of intermediate conductive layer insulate.Therefore, dummy pattern control layer 210 is not by thin film transistor (TFT)
230 controls, and controlled by perimeter circuit layer 300 (seeing Fig. 2).In some embodiments, when testing staff is intended to carry out
When detection, as shown in Fig. 2 and 4, electric connection structure 220 can be first cut, dummy pattern control layer 210 and perimeter circuit layer are made
300 insulation, then in a manner of laser welding, dummy pattern control layer 210 is electrically connected bottom conductive layer 270, and make virtual
The gate electrode of pattern control layer 210 and bottom conductive layer 270 is electrically connected, so that dummy pattern control layer 210 can be by film
Transistor 230 controls, and receives the signal of data line 500.
In some embodiments, the material of dummy pattern control layer 210, intermediate conductive layer 250 and bottom conductive layer 270
It is metal, but the present invention is not limited thereto.Similarly, in some embodiments, display pattern control layer 410, centre
The material of conductive layer 450 and bottom conductive layer 270 is metal, but the present invention is not limited thereto.In some embodiments,
The material of electric connection structure 220 is metal, but the present invention is not limited thereto.
Fig. 5 is the local overlooking schematic diagram according to the thin-film transistor array base-plate 10a of another embodiment of the present invention.
As shown in figure 5, present embodiment and the main difference of thin-film transistor array base-plate 10 shown in Fig. 2 are: in virtual pixel
In 200a, the quantity of electric connection structure 220 is multiple (such as two), to provide the higher electric field of intensity to the display member of top
Part layer 20 (sees Fig. 1).Furthermore, it is understood that if the size of virtual pixel 200a is larger, so that adjacent two virtual pixels 200a
Electric connection structure 220 spacing it is excessive when, the electric field strength of electric connection structure 220 may be not enough to control in clearance G
All microcapsules 21 (seeing Fig. 1) of side.However, when single virtual pixel 200a includes multiple electric connection structures 220,
And these electric connection structures 220, when both passing through clearance G, the electric-field strength in clearance G can be improved in these electric connection structures 220
Degree, to be conducive to the microcapsules 21 above control clearance G.
Specifically, A1 is arranged along a first direction for perimeter circuit layer 300 and dummy pattern control layer 210.Multiple electrical property
Connection structure 220 is arranged along second direction A2, and wherein first direction A1 and second direction A2 are substantially perpendicular.By above-mentioned row
Column mode, these electric connection structures 220 generated lateral electric fields on second direction A2, can make clearance G in second direction
Electric field strength on A2 is more uniform.
In some embodiments, adjacent two electric connection structure 220 is separated by spacing d on second direction A2.Spacing d is small
In or equal to 20 microns.Size design whereby, adjacent two electric connection structure 220 provided lateral electricity on second direction A2
Field can have higher intensity, and relatively effectively control the microcapsules 21 above clearance G.
In the present embodiment, these electric connection structures 220 are strip structure, the length direction of these strip structures
It is substantially parallel, and substantially parallel to first direction A1.In addition, these strip structures are essentially along second direction
What A2 was arranged.For example, these electric connection structures 220 can be the metal strip object of substantial parallel arrangement, these gold
Belonging to bar can provide the microcapsules 21 above the enough electric field controls clearance Gs of intensity, and testing staff can also be from these metals
Whether the display of the gap observation microcapsules 21 between bar is abnormal.
Fig. 6 is the local overlooking schematic diagram according to the thin-film transistor array base-plate 10b of another embodiment of the present invention.
As shown in fig. 6, present embodiment and the main difference of aforementioned film transistor (TFT) array substrate 10a are: virtual pixel 200b's
Electric connection structure 220b is different from the shape of aforementioned electric connection structure 220.Furthermore, it is understood that electric connection structure 220b packet
Containing the first conductor 221 and the second conductor 222.What the first conductor 221 and the second conductor 222 were connected to connect.The length of first conductor 221
Direction is spent substantially parallel to first direction A1.The length direction of second conductor 222 is substantially parallel to second direction A2.
When electric connection structure 220b is applied voltage, the first conductor 221 can provide lateral electricity on second direction A2
, and the second conductor 222 can provide lateral electric fields on A1 in a first direction.In this way, between electric connection structure 220b can make
Electric field strength in gap G is more uniform, with the microcapsules 21 (seeing Fig. 1) above benefit control clearance G.
In the present embodiment, as shown in fig. 6, the second conductor 222 may be disposed on perimeter circuit layer 300, rather than it is located at
In clearance G.Therefore, the second conductor 222 can increase in the case where not covering clearance G and homogenize the electric-field strength in clearance G
Degree.
In the present embodiment, as shown in fig. 6, electric connection structure 220b is L-shaped structure.Specifically, the first conductor
221 and second conductor 222 be strip structure.Second conductor 222 is connected to the end of the first conductor 221, and the length of the two
Direction is perpendicular, and collectively forms L-shaped structure.For example, the first conductor 221 and the second conductor 222 can be metal strip
Object, but the present invention is not limited thereto.
Fig. 7 is the local overlooking schematic diagram according to the thin-film transistor array base-plate 10c of another embodiment of the present invention.
As shown in fig. 7, present embodiment and the main difference of aforementioned film transistor (TFT) array substrate 10b are: virtual pixel 200c's
Electric connection structure 220c is different from the shape of aforementioned electric connection structure 220b.Furthermore, it is understood that electric connection structure 220c
For T-shaped structure.Specifically, electric connection structure 220c may include the first conductor 221 and two the second conductors 222.Wherein one
A second conductor 222 is vertically connected to the upside of the first conductor 221, another second conductor 222 is vertically connected to first
T-shaped structure can be collectively formed with the two second conductors 222 in the downside of conductor 221, whereby, the first conductor 221.
By above-mentioned design, the electric connection structure 220c of this T shape increases using two the second conductors 222 in first party
Lateral electric fields intensity on A1, so that the electric field strength in clearance G is further homogenized, above benefit control clearance G
Microcapsules 21 (see Fig. 1).
In the present embodiment, as shown in fig. 7, two the second conductors 222 are all set on perimeter circuit layer 300, rather than
In clearance G.Therefore, the two second conductors 222 can increase and in homogenization clearance G in the case where not covering clearance G
Electric field strength.
Although the present invention is disclosed as above with embodiment, so it is not intended to limit the present invention, any art technology
Personnel can make a variety of different selections and modification, therefore protection model of the invention without departing from the spirit and scope of the present invention
It encloses and is limited by claims and its equivalents.
Claims (10)
1. a kind of display device, which is characterized in that the display device includes:
Transparent substrates；
Multiple virtual pixels are set on the transparent substrates, and each the multiple virtual pixel is controlled comprising dummy pattern
Layer, one of the multiple virtual pixel include at least one electric connection structure, and the electric connection structure is led comprising first
Body and at least one second conductor, first conductor are connected with second conductor, the length side of first conductor
To first direction is parallel to, the length direction of second conductor is parallel to second direction, the first direction and described second
Direction is vertical；
Perimeter circuit layer is set on the transparent substrates, for applying the voltage of same polarity to each dummy pattern
Control layer；And
Display element layer covers the transparent substrates and the multiple virtual pixel；
Wherein the perimeter circuit layer and each dummy pattern control layer are mutually separated with gap, and the gap allows light from described
Display element layer reflexes to the transparent substrates.
2. a kind of display device as described in claim 1, which is characterized in that it passes through the gap and connects the virtual graph
Case control layer and the perimeter circuit layer.
3. a kind of display device as claimed in claim 2, which is characterized in that the perimeter circuit layer and the dummy pattern control
Preparative layer arranges along a first direction, and the quantity of at least one electric connection structure is multiple, multiple electric connections
Structure is arranged along second direction.
4. a kind of display device as claimed in claim 3, which is characterized in that adjacent the two of the multiple electric connection structure
It is mutually separated with spacing in this second direction, the spacing is less than or equal to 20 microns.
5. a kind of display device as claimed in claim 2, which is characterized in that the electric connection structure is L-shaped structure.
6. a kind of display device as claimed in claim 2, which is characterized in that the electric connection structure is T-shaped structure.
7. a kind of display device as claimed in claim 2, which is characterized in that the electric connection structure exposed portion it is described
Gap.
8. a kind of display device as claimed in claim 7, which is characterized in that a part of the display element layer is located at described
Above gap and by the electric field controls of the electric connection structure.
9. a kind of display device as described in claim 1, which is characterized in that the display device also includes multiple display pictures
Element is set on the transparent substrates, and is covered by the display element layer, and the multiple virtual pixel surrounds described jointly
Multiple display pixels, at least the two of the multiple display pixel are applied the voltage of opposed polarity.
10. a kind of display device as described in claim 1, which is characterized in that at least one packet of the multiple virtual pixel
Containing thin film transistor (TFT), the thin film transistor (TFT) and the dummy pattern control layer are insulation, wherein being located at above-mentioned virtual pixel
Electric field controls of a part of the display element layer of top by the dummy pattern control layer.
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| CN201510182273.7A CN106154674B (en) | 2015-04-17 | 2015-04-17 | Display device |
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| CN201510182273.7A CN106154674B (en) | 2015-04-17 | 2015-04-17 | Display device |
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| CN106154674B true CN106154674B (en) | 2019-05-07 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102982765A (en) * | 2012-11-29 | 2013-03-20 | 杨夏芳 | Illumination method |
| CN104122073A (en) * | 2013-04-29 | 2014-10-29 | 元太科技工业股份有限公司 | Detection method and detection device |
| CN104167421A (en) * | 2013-05-15 | 2014-11-26 | 佳能株式会社 | Detecting apparatus and detecting system |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4305486B2 (en) * | 2006-09-28 | 2009-07-29 | エプソンイメージングデバイス株式会社 | LCD panel |
| KR101244897B1 (en) * | 2007-02-13 | 2013-03-18 | 삼성디스플레이 주식회사 | Thin film transistor and liquid crystal display having the same |
| JP2010224084A (en) * | 2009-03-23 | 2010-10-07 | Hitachi Displays Ltd | Liquid crystal display device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102982765A (en) * | 2012-11-29 | 2013-03-20 | 杨夏芳 | Illumination method |
| CN104122073A (en) * | 2013-04-29 | 2014-10-29 | 元太科技工业股份有限公司 | Detection method and detection device |
| CN104167421A (en) * | 2013-05-15 | 2014-11-26 | 佳能株式会社 | Detecting apparatus and detecting system |
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