CN106154674A - Display device - Google Patents
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- CN106154674A CN106154674A CN201510182273.7A CN201510182273A CN106154674A CN 106154674 A CN106154674 A CN 106154674A CN 201510182273 A CN201510182273 A CN 201510182273A CN 106154674 A CN106154674 A CN 106154674A
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- China
- Prior art keywords
- display device
- course
- electric connection
- dummy pattern
- transparent substrates
- Prior art date
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
- G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/3433—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices
- G09G3/344—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices based on particles moving in a fluid or in a gas, e.g. electrophoretic devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Abstract
The invention discloses a kind of display device, comprise transparent substrates, multiple virtual pixel, perimeter circuit layer and display element layer.Virtual pixel is arranged on transparent substrates.Each virtual pixel comprises dummy pattern key-course.Perimeter circuit layer is arranged on transparent substrates, for applying the voltage of same polarity to dummy pattern key-course.Display element layer covers transparent substrates and virtual pixel.Perimeter circuit layer and dummy pattern key-course separated by gap, this gap allows light to reflex to transparent substrates from display element layer.According to the display device of the present invention, the display element layer above gap can be seen from the dorsal view of transparent substrates, thus observe the color of microcapsule in display element layer, and the difference or exception by color judges to damage position.
Description
Technical field
The present invention relates to a kind of display device, and damage the display device of position particularly to a kind of observable.
Background technology
Typical electrophoretic display apparatus comprises electrophoresis layer and thin-film transistor array base-plate.Electrophoresis layer is arranged
On thin-film transistor array base-plate, in use, thin-film transistor array base-plate can produce electric field, with
The white charged particles controlling the microcapsule in electrophoresis layer moves with charged black particles, thus shows picture.
Thin-film transistor array base-plate comprises multiple display pixel and multiple virtual pixel (dummy
Pixel), these virtual pixels are around display pixel, and it is identical to allow the inner annular zone of display element layer present
Color, and visually form housing.
In general, when the circuit of thin-film transistor array base-plate damages, can be from the back side of glass substrate
Observe the color of microcapsule, and the exception by color judges it is which bar circuit damages.But, for
The whole inner annular zone allowing display element layer forms continuous print housing pattern, and maker can be at this outer shroud
Shape is covered with metal electrode below region, to control the microcapsule of whole inner annular zone.In such structure
Under, when the circuit of thin-film transistor array base-plate damages, due to metal electrode, system is positioned at display element layer
And between glass substrate, so the microcapsule display element layer cannot be seen from glass substrate dorsal view,
And cannot learn which bar circuit damages.
Summary of the invention
In consideration of it, it is an object of the present invention to provide a kind of observable to damage the display device of position.
In order to achieve the above object, according to an embodiment of the invention, a kind of display device comprises
Photopolymer substrate, multiple virtual pixel, perimeter circuit layer and display element layer.Virtual pixel is arranged at printing opacity
On substrate.Each virtual pixel comprises dummy pattern key-course.Perimeter circuit layer is arranged on transparent substrates,
For applying the voltage of same polarity to dummy pattern key-course.Display element layer covers transparent substrates and void
Intend pixel.Perimeter circuit layer and dummy pattern key-course separated by gap, this gap allows light from display element
Layer reflexes to transparent substrates.
In one or more embodiments of the present invention, virtual pixel comprises at least one and is electrically connected with knot
Structure, connects dummy pattern key-course and perimeter circuit layer and through gap.
In one or more embodiments of the present invention, perimeter circuit layer and dummy pattern key-course along
First direction arranges, and the quantity of electric connection structure is multiple, and these a little electric connection structures are along second
Direction arranges, first direction and second direction substantial orthogonality.
In one or more embodiments of the present invention, adjacent two electric connection structures are in a second direction
Intervening gaps, this spacing is less than or equal to 20 microns.
In one or more embodiments of the present invention, electric connection structure comprises first be connected leads
Body and at least one the second conductor.The length direction of the first conductor is substantially parallel to first direction.The
The length direction of two conductors is substantially parallel to second direction.
In one or more embodiments of the present invention, electric connection structure is L-shaped structure.
In one or more embodiments of the present invention, electric connection structure is T-shaped structure.
In one or more embodiments of the present invention, the gap of electric connection structure exposed portion.
In one or more embodiments of the present invention, a part for display element layer is positioned at above gap
And by the electric field controls of electric connection structure.
In one or more embodiments of the present invention, display device also comprises multiple display pixel, if
It is placed on transparent substrates, and shown element layer covers.These a little virtual pixels show picture around this jointly
Element, at least two display pixels are applied in the voltage of opposed polarity.
In one or more embodiments of the present invention, at least one of virtual pixel comprises film crystal
Pipe, thin film transistor (TFT) and dummy pattern key-course are insulation, are wherein positioned at the display above virtual pixel
A part for element layer is by the electric field controls of dummy pattern key-course.
In the above-described embodiment, owing to being positioned at the other perimeter circuit layer of virtual pixel and dummy pattern control
Layer separated by gap, and this gap allow light reflex to transparent substrates from display element layer, therefore, detect people
Member can see the display element layer above gap from the dorsal view of transparent substrates, thus can be by transparent substrates
The color of microcapsule in display element layer is observed at the back side, and the difference or exception by color judges to damage
Position.
The above be used merely to explain problem that the present invention to be solved, the technological means solving problem and
Its effect produced etc., the detail of the present invention is by detailed in embodiment below and relevant drawings
Thin introduction.
Accompanying drawing explanation
For the above and other purpose of the present invention, feature, advantage can be become apparent with embodiment, institute
Being described as follows of accompanying drawing:
Fig. 1 is the generalized section of the display device according to one embodiment of the present invention；
Fig. 2 is that the fragmentary top of the thin-film transistor array base-plate according to one embodiment of the present invention regards signal
Figure；
Fig. 3 is the thin-film transistor array base-plate generalized section along 3-3 line of Fig. 2；
Fig. 4 is the thin-film transistor array base-plate generalized section along 4-4 line of Fig. 2；
Fig. 5 is that the fragmentary top of the thin-film transistor array base-plate according to another embodiment of the present invention is depending on showing
It is intended to；
Fig. 6 is that the fragmentary top of the thin-film transistor array base-plate according to another embodiment of the present invention is depending on showing
It is intended to；And
Fig. 7 is that the fragmentary top of the thin-film transistor array base-plate according to another embodiment of the present invention is depending on showing
It is intended to.
Detailed description of the invention
Below by the multiple embodiments with the open present invention of accompanying drawing, as clearly stated, many concrete
Details will be explained in the following description.But, those skilled in the art it should be appreciated that this
In invention section embodiment, these concrete details not necessarily, therefore shall not be applied to limit this
Bright.Additionally, for the sake of simplifying accompanying drawing, structure usual known in some and element in the accompanying drawings will be with simply
The mode of signal describes.
Fig. 1 is the generalized section of the display device according to one embodiment of the present invention.As it is shown in figure 1,
Display device comprises thin-film transistor array base-plate 10 and display element layer 20.Display element layer 20 sets
It is placed on thin-film transistor array base-plate 10, and is driven to show picture by thin-film transistor array base-plate 10
Face.For example, display element layer 20 can be electrophoresis layer, and it comprises multiple microcapsule 21.Each micro-glue
Capsule 21 comprises multiple light color charged particle 22 and multiple dark charged particle 23.Light color charged particle 22
Different with the electric charge that dark charged particle 23 is carried, and can be by the electric field of thin-film transistor array base-plate 10
Attract or repel, and mobile to ad-hoc location, with display pattern.
Fig. 2 is that the fragmentary top of the thin-film transistor array base-plate 10 according to one embodiment of the present invention is depending on showing
It is intended to.As in figure 2 it is shown, thin-film transistor array base-plate 10 comprises transparent substrates 100, multiple virtual representation
Element 200, perimeter circuit layer 300 and multiple display pixel 400, multiple data wire 500 and multiple sweep
Retouch line 600.Virtual pixel 200, perimeter circuit layer 300 are arranged at transparent substrates 100 with display pixel 400
On, wherein these a little virtual pixels 200 show pixel 400 jointly a bit around this, and perimeter circuit layer 300 encloses
Around these a little virtual pixels 200.In other words, virtual pixel 200 is collectively forming annular patterns, and around institute
There is display pixel 400.Perimeter circuit layer 300 also forms annular patterns, and around all virtual pixels 200.
Multiple data wires 500 and multiple scan line 600 are used for driving display pixel 400 to show picture.Display
Pixel 400 at least both are applied in the voltage of opposed polarity, so that the display element layer 20 above it
Microcapsule 21 (as shown in Figure 1) presents different colours, to demonstrate required pattern.
As in figure 2 it is shown, each virtual pixel 200 comprises dummy pattern key-course 210.Dummy pattern controls
Layer 210 is electrically connected at perimeter circuit layer 300.Perimeter circuit layer 300 for apply the voltage of same polarity to
The dummy pattern key-course 210 of all virtual pixels 200 so that above all dummy pattern key-courses 210
The microcapsule 21 (see Fig. 1) of display element layer 20 can present same color, thus formed continuously
Housing pattern.
As in figure 2 it is shown, perimeter circuit layer 300 and the dummy pattern key-course 210 of all virtual pixels 200
Separated by gap G.Display element layer 20 (see Fig. 1) cover transparent substrates 100, virtual pixel 200 with
And display pixel 400, and the display element layer 20 of part is positioned at above clearance G.This gap G allows light
Transparent substrates 100 is reflexed to from display element layer 20.Consequently, it is possible to testing staff can be from transparent substrates 100
The back side (that is, back to virtual pixel 200, surface of perimeter circuit layer 300 and display pixel 400) see
See the display element layer 20 above clearance G, thus observed in clearance G by the back side of transparent substrates 100
The color of microcapsule 21 in the display element layer 20 of side, and by the difference of color or abnormal judge to damage
Bad position.
In some embodiments, as in figure 2 it is shown, virtual pixel 200 comprises electric connection structure 220.
Electric connection structure 220 is through clearance G and connects dummy pattern key-course 210 and perimeter circuit layer 300,
Whereby, perimeter circuit layer 300 can apply voltage to dummy pattern key-course by electric connection structure 220
210, to control the microcapsule 21 (see Fig. 1) of the display element layer 20 above all virtual pixels 200
Same color can be presented, thus form continuous print housing pattern.
Reflex to transparent substrates 100 in order to allow light through clearance G from display element layer 20, electrically connect
The clearance G of access node structure 220 exposed portion.Even if consequently, it is possible to electric connection structure 220 is through clearance G
To be electrically connected with dummy pattern key-course 210 and perimeter circuit layer 300, testing staff still can be from transparent substrates
The color of the microcapsule 21 above clearance G is observed at the back side of 100, and by the different of color or abnormal next
Judge to damage position.
Additionally, due to electric connection structure 220 is through clearance G, and between part display element layer 20 is positioned at
Above gap G, so when perimeter circuit layer 300 applies voltage to electric connection structure 220, between being positioned at
Part display element layer 20 above gap G can be by the electric field controls of electric connection structure 220, and due to electricity
Property attachment structure 220 is identical with the voltage suffered by dummy pattern key-course 210, so being positioned in clearance G
The part display element layer 20 of side and the part display element layer 20 being positioned at above dummy pattern key-course 210
Same color can be presented, and be collectively forming continuous print housing pattern.
In some embodiments, as in figure 2 it is shown, the part display element layer above virtual pixel 200
20 (see Fig. 1) are by the electric field controls of dummy pattern key-course 210.Virtual pixel 200 can comprise thin film
Transistor 230.Dummy pattern key-course 210 comprises pixel electrode 212.Thin film transistor (TFT) 230 connects number
According to line 500 and scan line 600, but thin film transistor (TFT) 230 and dummy pattern key-course 210 are insulation.
Due in virtual pixel 200, the pixel electrode 212 of dummy pattern key-course 210 and thin film transistor (TFT)
230 is insulation, without being controlled by thin film transistor (TFT) 230.On the contrary, dummy pattern key-course
210 are electrically connected with perimeter circuit layer 300, and are controlled by perimeter circuit layer 300.Therefore, perimeter line
Road floor 300 can pass through dummy pattern key-course 210, controls the part display element above virtual pixel 200
Layer 20.
When detecting display device, testing staff can mark at transparent substrates frontside edge, as detection people
Member observes a certain data line 500 fault, and causes above its multiple display pixels 400 connected
When display element layer 20 shows abnormal, testing staff need to judge that these display pixel 400 correspondences are to which
Mark.But, owing to display pixel 400 has still been separated by virtual pixel 200 with transparent substrates frontside edge,
So being difficult to accurately judge abnormal display pixel 400 correspondence is to which mark.Therefore, real in part
Executing in mode, testing staff can be initially switched off the electric connection structure 220 of virtual pixel 200 so that virtual representation
Element 200 insulate with perimeter circuit layer 300.Then, testing staff can turn on picture in the way of laser welding
Element electrode 212 and thin film transistor (TFT) 230, so now, data wire 500 can pass through thin film transistor (TFT) 230
Control dummy pattern key-course 210.Therefore, when data wire 500 is abnormal, dummy pattern key-course 210
The display element layer 20 of top also can be in abnormal show, thus beneficially testing staff judges the aobvious of abnormal show
Show which data line is element layer 20 correspondence, to which mark of transparent substrates frontside edge, judge with help
500 faults.
For example, form the grid of thin film transistor (TFT) 230, source electrode is positioned at virtual with the conductive layer of drain electrode
The lower section of pattern key-course 210, and this conductive layer and dummy pattern key-course 210 by insulant institute every
Open and insulate.When being intended to switch on pixel electrode 212 with thin film transistor (TFT) 230, user can be with laser
The mode of welding punches the insulant below pixel electrode 212, and makes formation thin film transistor (TFT) 230
The conductive layer of grid is electrically connected at pixel electrode 212.Consequently, it is possible to thin film transistor (TFT) 230 can control
Dummy pattern key-course 210 so that the signal of data wire 500 can be supplied to pixel electrode 212.
Portion is in point embodiment, as in figure 2 it is shown, display pixel 400 can comprise display pattern key-course
410 with thin film transistor (TFT) 430.Display pattern key-course 410 can comprise pixel electrode 412.Film crystal
Pipe 430 is electrically connected at data wire 500 and scan line 600.Leading of the grid of formation thin film transistor (TFT) 430
Electric layer is electrically connected at the pixel electrode 412 of display pattern key-course 410, so thin film transistor (TFT) 430 can
Control display pattern key-course 410.
Furthermore, it is understood that see Fig. 3, this figure is that the thin-film transistor array base-plate 10 of Fig. 2 is along 3-3
The generalized section of line.As it is shown on figure 3, show that pixel 400 also comprises the first insulating barrier 440, centre is led
Electric layer the 450, second insulating barrier 460 and bottom conductive layer 470.Bottom conductive layer 470, second insulate
Layer 460, intermediate conductive layer the 450, first insulating barrier 440 are sequentially laminated in display pattern key-course 410
On transparent substrates 100.Intermediate conductive layer 450 is positioned at bottom conductive layer 470 and display pattern key-course 410
Between, and bottom conductive layer 470 is electrically connected with display pattern key-course 410.The electricity of intermediate conductive layer 450
Position can be considered reference potential, and they are different from the current potential of bottom conductive layer 470 and display pattern key-course 410,
Make intermediate conductive layer 450 and bottom conductive layer 470 can produce electric capacity between the two, and middle conduction
Layer 450 and display pattern key-course 410 can produce another electric capacity between the two.Bottom conductive layer 470
Comprise gate electrode, and bottom conductive layer 470 connects scan line 600 (see Fig. 2).Intermediate conductive layer
450 comprise drain electrode and source electrode, and intermediate conductive layer 450 connects data wire 500 and (see figure
2).Also can comprise semiconductor layer between bottom conductive layer 470 and intermediate conductive layer 450 and (be not shown in this figure
In), semiconductor layer, the gate electrode of bottom conductive layer 470 and the drain electrode of intermediate conductive layer 450
And source electrode can be collectively forming thin film transistor (TFT) 430 (see Fig. 2).Display pattern key-course 410
Ground is divided to run through the first insulating barrier 440 and the second insulating barrier 460 and be electrically connected with bottom conductive layer 470.Therefore,
The pixel electrode 412 (see Fig. 2) of display pattern key-course 410 is electrically connected at bottom conductive layer 470
Gate electrode, thus can be controlled by thin film transistor (TFT) 430.
Fig. 4 is the thin-film transistor array base-plate 10 generalized section along 4-4 line of Fig. 2.Such as Fig. 4
Shown in, virtual pixel 200 also comprises the first insulating barrier 240, intermediate conductive layer the 250, second insulating barrier 260
And bottom conductive layer 270.Bottom conductive layer the 270, second insulating barrier 260, intermediate conductive layer 250,
First insulating barrier 240 is sequentially laminated on transparent substrates 100 with dummy pattern key-course 210.Bottom is led
Electric layer 270 comprises gate electrode, and bottom conductive layer 270 connects scan line 600 (see Fig. 2).In
Between conductive layer 250 comprise drain electrode and source electrode, and intermediate conductive layer 250 connect data wire 500 (can
Refering to Fig. 2).Also semiconductor layer can be comprised (not shown between bottom conductive layer 270 and intermediate conductive layer 250
In Yu Bentu), semiconductor layer, the gate electrode of bottom conductive layer 270 and the leakage of intermediate conductive layer 250
Pole electrode and source electrode can be collectively forming thin film transistor (TFT) 230 (see Fig. 2).First insulating barrier 240
Completely separated dummy pattern key-course 210 and intermediate conductive layer 250 so that dummy pattern key-course 210 with
Intermediate conductive layer 250 phase insulate.Therefore, dummy pattern key-course 210 is not controlled by thin film transistor (TFT) 230
System, and controlled by perimeter circuit layer 300 (see Fig. 2).In some embodiments, as detection people
When member is intended to detect, as shown in Fig. 2 and 4, can first cut electric connection structure 220, make dummy pattern
Key-course 210 insulate with perimeter circuit layer 300, then in the way of laser welding, by dummy pattern control
Layer 210 is electrically connected with bottom conductive layer 270, and makes dummy pattern key-course 210 and bottom conductive layer 270
Gate electrode be electrically connected with so that dummy pattern key-course 210 can be controlled by thin film transistor (TFT) 230,
And receive the signal of data wire 500.
In some embodiments, dummy pattern key-course 210, intermediate conductive layer 250 and bottom conductive layer
The material of 270 is metal, but the present invention is not limited thereto.Similarly, in some embodiments,
Display pattern key-course 410, intermediate conductive layer 450 are metal with the material of bottom conductive layer 270, but
The present invention is not limited thereto.In some embodiments, the material of electric connection structure 220 is metal,
But the present invention is not limited thereto.
Fig. 5 is the fragmentary top of the thin-film transistor array base-plate 10a according to another embodiment of the present invention
Depending on schematic diagram.As it is shown in figure 5, the master of thin-film transistor array base-plate 10 shown in present embodiment and Fig. 2
Wanting difference to be: in virtual pixel 200a, the quantity of electric connection structure 220 is multiple (such as two),
To provide the higher electric field of intensity to the display element layer 20 (see Fig. 1) of top.If furthermore, it is understood that
The size of virtual pixel 200a is bigger so that the electric connection structure 220 of adjacent two virtual pixel 200a
Spacing excessive time, the electric field intensity of electric connection structure 220 may be not enough to control above clearance G
All microcapsules 21 (see Fig. 1).But, when single virtual pixel 200a comprises multiple electric connection
During structure 220, and when these electric connection structures 220 both pass through clearance G, these electric connection structures
220 can improve the electric field intensity in clearance G, thus are beneficial to control the microcapsule 21 above clearance G.
Specifically, perimeter circuit layer 300 arranges with dummy pattern key-course 210 A1 along a first direction.
Multiple electric connection structures 220 arrange along second direction A2, wherein first direction A1 and second direction
A2 substantial orthogonality.By above-mentioned arrangement mode, these electric connection structures 220 are in second direction A2
Upper produced lateral electric fields, can make clearance G electric field intensity in second direction A2 the most uniform.
In some embodiments, adjacent two electric connection structure 220 intervening gaps in second direction A2
d.Spacing d is less than or equal to 20 microns.Size design whereby, adjacent two electric connection structures 220 exist
The lateral electric fields provided in second direction A2 can have higher intensity, and more effectively controls clearance G
The microcapsule 21 of top.
In the present embodiment, these electric connection structures 220 are list structure, these list structures
Length direction the most parallel, and all substantially parallel to first direction A1.It addition, these
Shape structure is arranged essentially along second direction A2.For example, these electric connection structures 220
Can be the metal strip thing of substantial parallel arrangement, these metal strip things can provide the electric field that intensity is enough
Control the microcapsule 21 above clearance G, and testing staff also can gap between these metal strip things
That observes microcapsule 21 displays whether exception.
Fig. 6 is the fragmentary top of the thin-film transistor array base-plate 10b according to another embodiment of the present invention
Depending on schematic diagram.As shown in Figure 6, present embodiment and aforementioned film transistor (TFT) array substrate 10a's is main
Difference is: the electric connection structure 220b of virtual pixel 200b and aforementioned electric connection structure 220
Shape is different.Furthermore, it is understood that electric connection structure 220b comprises the first conductor 221 and the second conductor 222.
First conductor 221 and the second conductor 222 are connected to connect.The length direction of the first conductor 221 is substantially
It is parallel to first direction A1.The length direction of the second conductor 222 is substantially parallel to second direction A2.
When electric connection structure 220b is applied in voltage, the first conductor 221 can be in second direction A2
Lateral electric fields is provided, and the second conductor 222 can provide lateral electric fields on A1 in a first direction.Consequently, it is possible to
Electric connection structure 220b can make the electric field intensity in clearance G be more uniformly distributed, in order to controlling in clearance G
The microcapsule 21 (see Fig. 1) of side.
In the present embodiment, as shown in Figure 6, the second conductor 222 may be disposed at perimeter circuit layer 300
On, rather than be positioned in clearance G.Therefore, the second conductor 222 can in the case of not covering clearance G,
Electric field intensity in increase and homogenization clearance G.
In the present embodiment, as shown in Figure 6, electric connection structure 220b is L-shaped structure.Concrete next
Saying, the first conductor 221 and the second conductor 222 are list structure.Second conductor 222 is connected to first
The end of conductor 221, and both length directions are perpendicular, and collectively form L-shaped structure.Citing comes
Saying, the first conductor 221 and the second conductor 222 can be all metal strip thing, but the present invention not as
Limit.
Fig. 7 is the fragmentary top of the thin-film transistor array base-plate 10c according to another embodiment of the present invention
Depending on schematic diagram.As it is shown in fig. 7, present embodiment and aforementioned film transistor (TFT) array substrate 10b's is main
Difference is: the electric connection structure 220c of virtual pixel 200c and aforementioned electric connection structure 220b's
Shape is different.Furthermore, it is understood that electric connection structure 220c is T-shaped structure.Specifically, electrically connect
Access node structure 220c can comprise the first conductor 221 and two the second conductors 222.One of them second conductor 222
Vertically being connected to the upside of the first conductor 221, another second conductor 222 is vertically connected to first
The downside of conductor 221, whereby, the first conductor 221 can be collectively forming T with the two the second conductor 222
Shape structure.
By above-mentioned design, the electric connection structure 220c of this T-shaped may utilize two the second conductors 222 and increases
Add the lateral electric fields intensity on A1 in a first direction, thus the electric field in homogenization clearance G further
Intensity, in order to the microcapsule 21 (see Fig. 1) controlled above clearance G.
In the present embodiment, as it is shown in fig. 7, two the second conductors 222 may be contained within perimeter circuit layer
On 300, rather than it is positioned in clearance G.Therefore, the two the second conductor 222 can not cover clearance G
In the case of, the electric field intensity in increase and homogenization clearance G.
Although the present invention is open as above with embodiment, so it is not intended to limit the present invention, Ren Heben
Skilled person, without departing from the spirit and scope of the present invention, can make various different selection and repair
Changing, therefore protection scope of the present invention is limited by claims and equivalents thereof.
Claims (11)
1. a display device, it is characterised in that described display device comprises:
Transparent substrates；
Multiple virtual pixels, it is arranged on described transparent substrates, and each the plurality of virtual pixel comprises
Dummy pattern key-course；
Perimeter circuit layer, it is arranged on described transparent substrates, for applying the voltage of same polarity to each
Described dummy pattern key-course；And
Display element layer, it covers described transparent substrates and the plurality of virtual pixel；
Wherein said perimeter circuit layer is separated with gap, described gap mutually with each described dummy pattern key-course
Light is allowed to reflex to described transparent substrates from described display element layer.
2. display device as claimed in claim 1, it is characterised in that the one of the plurality of virtual pixel
Person comprises at least one electric connection structure, and it is through described gap and connects described dummy pattern key-course
With described perimeter circuit layer.
3. display device as claimed in claim 2, it is characterised in that described perimeter circuit layer is with described
Dummy pattern key-course arranges along a first direction, and the quantity of at least one electric connection structure described is
Multiple, multiple described electric connection structures arrange along second direction, described first direction and described second
Direction is vertical.
4. display device as claimed in claim 3, it is characterised in that the plurality of electric connection structure
Adjacent both be separated with spacing mutually, described in be smaller than or equal to 20 microns.
5. display device as claimed in claim 3, it is characterised in that the plurality of electric connection structure
One comprise the first conductor being connected and at least one the second conductor, the length of described first conductor
Being oriented parallel to described first direction, the length direction of described second conductor is parallel to described second direction.
6. display device as claimed in claim 2, it is characterised in that described electric connection structure is L
Shape structure.
7. display device as claimed in claim 2, it is characterised in that described electric connection structure is T
Shape structure.
8. display device as claimed in claim 2, it is characterised in that described electric connection structure exposes
The described gap of part.
9. display device as claimed in claim 8, it is characterised in that of described display element layer
Point it is positioned at above described gap and by the electric field controls of described electric connection structure.
10. display device as claimed in claim 1, it is characterised in that described display device also comprises many
Individual display pixel, it is arranged on described transparent substrates, and is covered by described display element layer, described many
Individual virtual pixel jointly around the plurality of display pixel, the plurality of display pixel at least both are executed
Add the voltage of opposed polarity.
11. display devices as claimed in claim 1, it is characterised in that the plurality of virtual pixel is extremely
Few one comprises thin film transistor (TFT), and described thin film transistor (TFT) and described dummy pattern key-course are insulation,
The part being wherein positioned at the described display element layer above above-mentioned virtual pixel is controlled by described dummy pattern
The electric field controls of layer.
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| CN201510182273.7A CN106154674B (en) | 2015-04-17 | 2015-04-17 | Display device |
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| CN201510182273.7A CN106154674B (en) | 2015-04-17 | 2015-04-17 | Display device |
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| CN106154674B CN106154674B (en) | 2019-05-07 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080079859A1 (en) * | 2006-09-28 | 2008-04-03 | Epson Imaging Devices Corporation | Liquid crystal display panel |
| US20080192163A1 (en) * | 2007-02-13 | 2008-08-14 | Samsung Electronics Co., Ltd. | Thin film transistor substrate and liquid crystal display having the same |
| JP2010224084A (en) * | 2009-03-23 | 2010-10-07 | Hitachi Displays Ltd | Liquid crystal display device |
| CN102982765A (en) * | 2012-11-29 | 2013-03-20 | 杨夏芳 | Illumination method |
| CN104122073A (en) * | 2013-04-29 | 2014-10-29 | 元太科技工业股份有限公司 | Detection method and detection device |
| CN104167421A (en) * | 2013-05-15 | 2014-11-26 | 佳能株式会社 | Detecting apparatus and detecting system |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080079859A1 (en) * | 2006-09-28 | 2008-04-03 | Epson Imaging Devices Corporation | Liquid crystal display panel |
| US20080192163A1 (en) * | 2007-02-13 | 2008-08-14 | Samsung Electronics Co., Ltd. | Thin film transistor substrate and liquid crystal display having the same |
| JP2010224084A (en) * | 2009-03-23 | 2010-10-07 | Hitachi Displays Ltd | Liquid crystal display device |
| CN102982765A (en) * | 2012-11-29 | 2013-03-20 | 杨夏芳 | Illumination method |
| CN104122073A (en) * | 2013-04-29 | 2014-10-29 | 元太科技工业股份有限公司 | Detection method and detection device |
| CN104167421A (en) * | 2013-05-15 | 2014-11-26 | 佳能株式会社 | Detecting apparatus and detecting system |
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