CN106147709A - A kind of semiconductor grinding agent - Google Patents
A kind of semiconductor grinding agent Download PDFInfo
- Publication number
- CN106147709A CN106147709A CN201610521717.XA CN201610521717A CN106147709A CN 106147709 A CN106147709 A CN 106147709A CN 201610521717 A CN201610521717 A CN 201610521717A CN 106147709 A CN106147709 A CN 106147709A
- Authority
- CN
- China
- Prior art keywords
- parts
- grinding agent
- powder
- semiconductor
- semiconductor grinding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Ceramic Products (AREA)
Abstract
A kind of semiconductor grinding agent, it is made up of the raw material of following parts by weight: containing hydrogen silicone oil 47 parts, tetramethylolmethane 24 parts, montmorillonite 49 parts, silicon powder 5 10 parts, rare earth ferrosilicon alloy 69 parts, epoxy modified phenolic resin 14 parts, benzoyl peroxide 6 10 parts, Nano graphite powder 36 parts, potassium dihydrogen phosphate 2.3 4.8 parts, bisphenol A polycarbonate 48 parts, dispersant 23 parts, MTES 8 12 parts, 2.3 4.1 parts of calcium chloride, polyvinyl alcohol 1.3 5 parts, 2.2 3.8 parts of molybdenum-iron powder, polyacrylate 68 parts, sodium salicylate 4.2 7 parts.The invention has the beneficial effects as follows: the semiconductor grinding agent of the present invention, there is good stability and scratch property, there is good grinding effect, and corrosion phenomenon will not be produced.
Description
Technical field
The present invention relates to a kind of semiconductor grinding agent.
Background technology
During the processing and manufacturing of semiconductor chip, along with using embedded operation, (a kind of appropriate litigation fees is cheap and energy
Set up the operation of more dense component structure on the silicon die) progressively popularize, the plain conductor in chip is carried out chemistry
Mechanical lapping polishing also becomes essential.Semiconductor device can be caused corruption while grinding by existing grinding agent major part
Erosion, reduces the performance of abrasive body, shortens the use time of quasiconductor.Therefore, the performance of quasiconductor awaits changing further
Enter.
Summary of the invention
For the deficiencies in the prior art, the problem to be solved in the present invention is to provide a kind of semiconductor grinding agent, has very well
Stability and scratch property, there is good grinding effect, and corrosion phenomenon will not be produced.
For solving prior art problem, the technical scheme that the present invention provides is, a kind of semiconductor grinding agent, it is by following heavy
The raw material of amount number is made:
Containing hydrogen silicone oil 4-7 part, tetramethylolmethane 2-4 part, montmorillonite 4-9 part, silicon powder 5-10 part, rare earth ferrosilicon alloy 6-9 part, ring
Oxygen phenol-formaldehyde resin modified 1-4 part, benzoyl peroxide 6-10 part, Nano graphite powder 3-6 part, potassium dihydrogen phosphate 2.3-4.8 part is double
Phenol A type Merlon 4-8 part, dispersant 2-3 part, MTES 8-12 part, calcium chloride 2.3-4.1 part, polyethylene
Alcohol 1.3-5 part, molybdenum-iron powder 2.2-3.8 part, polyacrylate 6-8 part, sodium salicylate 4.2-7 part.
The invention has the beneficial effects as follows: the semiconductor grinding agent of the present invention, there is good stability and scratch property, have
Well grinding effect, and corrosion phenomenon will not be produced.
Detailed description of the invention
Embodiment 1
A kind of semiconductor grinding agent, it is made up of the raw material of following parts by weight:
Containing hydrogen silicone oil 4 parts, tetramethylolmethane 2 parts, montmorillonite 4 parts, silicon powder 5 parts, rare earth ferrosilicon alloy 6 parts, epoxide modified phenolic aldehyde
Resin 1 part, benzoyl peroxide 6 parts, Nano graphite powder 3 parts, potassium dihydrogen phosphate 2.3 parts, bisphenol A polycarbonate 4 parts, dispersion
Agent 2 parts, MTES 8 parts, 2.3 parts of calcium chloride, polyvinyl alcohol 1.3 parts, 2.2 parts of molybdenum-iron powder, polyacrylate 6
Part, sodium salicylate 4.2 parts.
Embodiment 2
A kind of semiconductor grinding agent, it is made up of the raw material of following parts by weight:
Containing hydrogen silicone oil 7 parts, tetramethylolmethane 4 parts, montmorillonite 9 parts, silicon powder 10 parts, rare earth ferrosilicon alloy 9 parts, epoxide modified phenolic aldehyde
Resin 4 parts, benzoyl peroxide 10 parts, Nano graphite powder 6 parts, potassium dihydrogen phosphate 4.8 parts, bisphenol A polycarbonate 8 parts, point
Powder 3 parts, MTES 12 parts, 4.1 parts of calcium chloride, polyvinyl alcohol 5 parts, 3.8 parts of molybdenum-iron powder, polyacrylate 8
Part, sodium salicylate 7 parts.
Claims (1)
1. a semiconductor grinding agent, it is characterised in that: it is made up of the raw material of following parts by weight:
Containing hydrogen silicone oil 4-7 part, tetramethylolmethane 2-4 part, montmorillonite 4-9 part, silicon powder 5-10 part, rare earth ferrosilicon alloy 6-9 part, ring
Oxygen phenol-formaldehyde resin modified 1-4 part, benzoyl peroxide 6-10 part, Nano graphite powder 3-6 part, potassium dihydrogen phosphate 2.3-4.8 part is double
Phenol A type Merlon 4-8 part, dispersant 2-3 part, MTES 8-12 part, calcium chloride 2.3-4.1 part, polyethylene
Alcohol 1.3-5 part, molybdenum-iron powder 2.2-3.8 part, polyacrylate 6-8 part, sodium salicylate 4.2-7 part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610521717.XA CN106147709A (en) | 2016-07-06 | 2016-07-06 | A kind of semiconductor grinding agent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610521717.XA CN106147709A (en) | 2016-07-06 | 2016-07-06 | A kind of semiconductor grinding agent |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106147709A true CN106147709A (en) | 2016-11-23 |
Family
ID=58062877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610521717.XA Pending CN106147709A (en) | 2016-07-06 | 2016-07-06 | A kind of semiconductor grinding agent |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106147709A (en) |
-
2016
- 2016-07-06 CN CN201610521717.XA patent/CN106147709A/en active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161123 |
|
| WD01 | Invention patent application deemed withdrawn after publication |