CN106129542A - A kind of PIN switch with high stable isolation - Google Patents
A kind of PIN switch with high stable isolation Download PDFInfo
- Publication number
- CN106129542A CN106129542A CN201610595020.7A CN201610595020A CN106129542A CN 106129542 A CN106129542 A CN 106129542A CN 201610595020 A CN201610595020 A CN 201610595020A CN 106129542 A CN106129542 A CN 106129542A
- Authority
- CN
- China
- Prior art keywords
- medium substrate
- pin
- microwave signal
- pin diode
- backing plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
Landscapes
- Electronic Switches (AREA)
Abstract
The present invention relates to a kind of switch of the PIN with high stable isolation, comprise: backing plate can be cut down, top surface is offered multiple spaced groove and tongue, be positioned at can cut down backing plate two ends for groove；Multiple medium substrates, are correspondingly arranged on each groove respectively, bonding with cutting down backing plate；It is respectively provided with microwave signal conduction band on each medium substrate, is used for transmitting microwave signal；Multiple PIN diode chips, are used for controlling microwave signal break-make, are correspondingly arranged at respectively on each tongue, bonding with cutting down backing plate；Many bonding lines, bonding connects the microwave signal conduction band of the most adjacent medium substrate and the tube core of PIN diode chip respectively；Tube pitch between each two PIN diode chip is 1/4 wavelength, and this wavelength refers to the wavelength that microwave signal is transmitted on medium substrate.The present invention uses modularized design, it is easy to integrated use, has high-isolation, and isolation has high stable concordance；Multi-channel microwave system uses, the stable and consistent that microwave signal turns off can be realized.
Description
Technical field
The present invention relates to a kind of PIN switch, specifically refer to a kind of PIN switch with high stable isolation, belong to microwave
Technical field of circuit design.
Background technology
In microwave system, often requiring that the transmission to microwave signal is controlled, PIN switch is to utilize PIN diode
(between P semi-conducting material and N semi-conducting material, add the eigen I ntrinsic semiconductor layer that a thin layer is low-doped, composition
The diode of P-I-N structure is PIN diode) microwave semiconductor made of electrical characteristics under difference biases controls device, extensively
The general break-make for microwave signal controls.Isolation is a leading indicator of PIN switch, turns off microwave signal for weighing
Degree.
Under normal circumstances, for reaching the high-isolation requirement needed for PIN switch, when design, need multiple without envelope
The PIN diode chip earth of dress, the tube pitch between adjacent two PIN diodes is 1/4 wavelength, and this wavelength refers to micro-
The transmission wavelength of ripple signal.When assembling, be cut off by the microstrip line of transmission microwave signal, the spacing between two sections of microstrip lines is just
Well equal to the width of a PIN diode, with the microstrip line gold wire bonding interconnection of two sections, left and right, interval after PIN diode is loaded
Second PIN diode is installed after 1/4 wavelength again.
But during the assembling of PIN diode, it may appear that some introduce the situation of error: 1, due to PIN diode
Small-sized, when cutting microstrip line, the spacing between microstrip line can not be accomplished very accurate, and this spacing is often than PIN bis-
The width dimensions of pole pipe is much larger, and the gold wire bonding line causing interconnection is long, thus reduces the isolation of PIN switch, can simultaneously
Increase the insertion loss index of PIN switch；2, the tube pitch between two PIN diodes can not well ensure to be 1/4 wavelength,
The most also the isolation of PIN switch can be reduced.
Due to the above-mentioned error that may introduce, in Multi-channel microwave system, the shutoff journey of the microwave signal of each passage
Degree is different, thus cannot realize the stable and consistent of multiple PIN switch high-isolation requirement.
Summary of the invention
It is an object of the invention to provide a kind of PIN switch with high stable isolation, use modularized design, it is easy to collection
Become to use, there is high-isolation, and isolation has high stable concordance；Multi-channel microwave system uses, can realize micro-
The stable and consistent that ripple signal turns off.
For achieving the above object, the present invention provides a kind of PIN switch with high stable isolation, comprises: can cut down backing plate,
Offer the most spaced multiple groove and tongue on its top surface, and being positioned at this, can to cut down being of backing plate two ends recessed
Groove；Multiple medium substrates, are correspondingly arranged on each groove respectively, and bonding with described cut down backing plate；Each described Jie
It is provided with microwave signal conduction band on matter substrate, is used for transmitting microwave signal；Multiple PIN diode chips, are used for controlling microwave
The break-make of signal, is correspondingly arranged on each tongue respectively, and bonding with described cut down backing plate；Many bonding lines, respectively key
Close the tube core of microwave signal conduction band and the PIN diode chip connecting the most adjacent medium substrate；Wherein, each two PIN bis-
Tube pitch between the die of pole is 1/4 wavelength, and this wavelength refers to the wavelength that microwave signal is transmitted on medium substrate.
The microwave signal conduction band of each medium substrate is arranged at same straight line with the tube core of each PIN diode chip
On.
The end face of each medium substrate is arranged in same level with the end face of each PIN diode chip.
The thickness that difference in height is medium substrate of the groove on described cut down backing plate and tongue and PIN diode chip
The difference of thickness.
Described medium substrate uses ceramic substrate.
Described medium substrate comprises: two external medium substrates, is separately positioned on to be positioned at and can cut down two of backing plate two ends
In groove, one end of the microwave signal conduction band of each external medium substrate connects PIN diode chip, and the other end connects external electrical
Road；Connect medium substrate in multiple, be folded in respectively in the groove between two PIN diode chips, each in connect medium substrate
The two ends of microwave signal conduction band be all connected with PIN diode chip.
The described tube pitch between two PIN diode chips connects length and the PIN diode core of medium substrate in being
The length sum of sheet.
Described bonding line uses gold wire bonding line.
The PIN switch with high stable isolation provided by the present invention, uses modularized design, it is easy to integrated use；
Design by concave, convex groove on backing plate can be cut down, during assembling, accurately determine between PIN diode chip the one of tube pitch
Cause property, ensure that PIN diode chip is in same plane with the medium substrate of transmission microwave signal simultaneously, farthest keeps away
The PIN having exempted to cause because assembling is uncertain switchs the inconsistent of electrical isolation degree so that it is have high-isolation, high stable
The advantage that concordance, Insertion Loss are little, corresponding speed is fast.
The PIN switch with high stable isolation provided by the present invention, uses in Multi-channel microwave system, can realize
The stable and consistent that microwave signal turns off, has the strongest practicality and application prospect.
Accompanying drawing explanation
Figure 1A is the front elevational schematic of the cut down backing plate in the present invention；
Figure 1B is the schematic top plan view of the cut down backing plate in the present invention；
Fig. 2 is the three dimensional structure schematic diagram during assembling of the PIN switch with high stable isolation in the present invention；
Fig. 3 is the three dimensional structure schematic diagram after having assembled of the PIN switch with high stable isolation in the present invention.
Detailed description of the invention
Below in conjunction with Fig. 1～Fig. 3, describe a preferred embodiment of the present invention in detail.
As shown in Figures 2 and 3, the PIN switch with high stable isolation provided for the present invention, comprise: backing plate can be cut down
10, its top surface offers multiple the most spaced groove 101 and tongue 102, and is positioned at this and can cut down 10 liang of backing plate
That holds is groove 101；Multiple medium substrates, are correspondingly arranged on each groove 101 respectively, and with described cut down backing plate 10
Bonding；It is provided with microwave signal conduction band 15, as the transmission line for transmitting microwave signal on each described medium substrate；
Multiple PIN diode chips 12, for controlling the break-make of microwave signal to realize on-off action, are correspondingly arranged at each convex respectively
On groove 102 and bonding with described cut down backing plate 10；Many bonding lines 14, bonding connects the most adjacent medium substrate respectively
The tube core of microwave signal conduction band 15 and PIN diode chip 12；Wherein, between the pipe between each two PIN diode chip 12
Away from for 1/4 wavelength, this wavelength refers to the wavelength that microwave signal is transmitted on medium substrate.
The microwave signal conduction band 15 of each medium substrate is arranged at always with the tube core of each PIN diode chip 12
On line, and the end face of the end face of each medium substrate and each PIN diode chip 12 is arranged in same level, with
Make to connect medium substrate the shortest with the connection of the bonding line 14 of PIN diode chip 12 distance, thus reach to improve concordance
Purpose.
As shown in Figure 1A, the high-isolation requirement needed for switching due to PIN, and need to load in the cavity that narrow chamber is designed,
The width l of therefore described cut down backing plate 10kThere is Sizing requirements, need design between 1.8mm～2.5mm.
As shown in Figure 1B, the thickness h of described cut down backing plate 102There is no particularly severe Sizing requirements, if energy
It is gripped and assembles by the available tweezers of enough guarantees.Preferably, the thickness h of described cut down backing plate 102For medium
2～4 times of substrate thickness.
As shown in Figure 1B, the groove 101 on described cut down backing plate 10 and difference in height h of tongue 1021For medium substrate
The difference of the thickness of thickness and PIN diode chip 12.Preferably, described groove 101 and difference in height h of tongue 1021For
About 0.15mm.
In a preferred embodiment of the invention, described medium substrate uses relative dielectric constant between 8～10
Ceramic substrate, its loss tangent should be the least, generally no greater than 0.005.In view of self of PIN diode chip 12
Thickness is generally 0.1mm, and it is arranged on the tongue 102 that can cut down backing plate 10, and according to aforementioned, groove 101 and tongue 102
Difference in height h1For about 0.15mm, so that the end face of medium substrate exists with the end face of PIN diode chip 12 after Zhuan Pei
In same level, therefore, the thickness of medium substrate is preferably 0.254mm.
In another preferred embodiment of the invention, described medium substrate can also use the material that dielectric constant is relatively low
Material is made, the composite substrate RT5880 that such as dielectric constant can be used to be 2.2.But, in order to ensure each two PIN diode core
Tube pitch between sheet 12 is 1/4 wavelength, if using the material of low-k to make medium substrate, it will increase whole
The size of PIN switch.
According to the adaptability of PIN switch in the present invention, by the characteristic impedance of the microwave signal conduction band 15 of each medium substrate
It is designed as 50 Ω, using as PIN switch input, the coupling impedance of output port.Certainly, according to the adaptability of actual PIN switch,
May be designed in other resistance values.
As shown in Figures 2 and 3, described medium substrate comprises: two external medium substrates 13, is separately positioned on that be positioned at can
Cutting down in two grooves 101 at backing plate 10 two ends, one end of the microwave signal conduction band 15 of each external medium substrate 13 connects PIN bis-
Pole die 12, the other end connects external circuit；Connect medium substrate 11 in multiple, be folded in two PIN diode chips respectively
In groove 101 between 12, each in connect medium substrate 11 the two ends of microwave signal conduction band 15 be all connected with PIN diode chip
12。
As shown in Figure 1A, the effect of described external medium substrate 13 is to connect PIN switch and external circuit, and therefore it is long
Degree l3Not having certain size to design requirement, the dimensional requirement mainly switched according to the PIN needed for microwave circuit determines external
Length l of medium substrate 133。
As shown in Figure 1A, length l of medium substrate 11 is connect in described1Need to upload at medium substrate according to microwave signal
Defeated wavelength and length l of PIN diode chip 122Determine.Isolation index for making PIN switch reaches optimal,
Spacing between each two PIN diode chip 12 (connects length l of medium substrate 11 in i.e.1The length of+PIN diode chip 12
Degree l2) it is required to be n times of 1/4 wavelength；Again in order to meet the requirement that PIN switch designs minimizes, therefore preferred distance is 1/4 ripple
Long.It is possible to obtain:
l1=λg/4-l2；
Wherein, λgThe wavelength transmitted on medium substrate for microwave signal；l1For the interior length connecing medium substrate 11；l2For
The length of PIN diode chip 12, and l2Concrete numerical value can check on chip handbook.
And the wavelength X that microwave signal is transmitted on medium substrateg, then can be obtained by following formula:
λ0=c/f；
Wherein, λ0For microwave signal transmission wavelength in vacuum, c is the light velocity in vacuum, and f is the work frequency of microwave signal
Rate；εeFor the effective dielectric constant of medium substrate, h is the thickness of medium substrate, and W is the microwave signal conduction band 15 on medium substrate
Width (in the present embodiment, can be calculated by the characteristic impedance of its 50 Ω), εrRelative dielectric constant for medium substrate.
Preferably, at the electric capacity at microwave signal conduction band 15 edge considered on the inductive effect of bonding line 14, medium substrate
After effect, for making PIN switch reach optimal isolation degree, the spacing between each two PIN diode chip 12 actually needs ratio
1/4 wavelength is the shortest.
Described bonding line 14 uses gold wire bonding line.
In sum, the PIN switch with high stable isolation provided by the present invention, with existing be fit directly into micro-
PIN switch in wave circuit is compared, and has the advantages that
1, modularized design is used, using microwave signal conduction band that the characteristic impedance on medium substrate is 50 Ω as transmission
Line, using the PIN diode chip product without encapsulation as basic device, interval is bonded in can be cut down after on backing plate by spun gold key
Zygonema connects, and forms a PIN switch so that it is can flexible configuration and use in microwave circuit.
2, concave, convex groove is set can cut down on backing plate interval, just embeds in groove and medium substrate is set, tongue is just pacified
Dress PIN diode chip, after using this design, medium substrate and PIN diode chip just can accurately be placed in by concave, convex groove
The fixed position limited, thus realize the accurate installation of medium substrate and PIN diode chip.
3, the tube core of the microwave signal conduction band on each medium substrate and each PIN diode chip all ensures to be arranged on together
On one straight line, and the difference in height between concave, convex groove is designed as the thickness difference of medium substrate and PIN diode chip, thus protects
After card assembling, the end face of medium substrate and the end face of PIN diode chip are in same level, so that connect medium base
Plate is the shortest with the bonding line of PIN diode chip distance, is effectively improved the stable and consistent of PIN switch.
4, the length that tube pitch is PIN diode chip between each two PIN diode chip connects medium substrate with interior
Length sum, and to design it be 1/4 wavelength, while realizing PIN switch high-isolation so that it is satisfied design minimizes
Requirement.
Although present disclosure has been made to be discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read foregoing, for the present invention's
Multiple amendment and replacement all will be apparent from.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (8)
1. a PIN switch with high stable isolation, it is characterised in that comprise:
Backing plate (10) can be cut down, its top surface offers multiple the most spaced groove (101) and tongue (102), and
Be positioned at that this can cut down backing plate (10) two ends is groove (101)；
Multiple medium substrates, are correspondingly arranged on each groove (101) respectively, and bonding with described cut down backing plate (10)；Often
It is provided with microwave signal conduction band (15) on individual described medium substrate, is used for transmitting microwave signal；
Multiple PIN diode chips (12), for controlling the break-make of microwave signal, are correspondingly arranged at each tongue (102) respectively
On, and bonding with described cut down backing plate (10)；
Many bonding lines (14), bonding connects microwave signal conduction band (15) and PIN bis-pole of the most adjacent medium substrate respectively
The tube core of die (12)；
Wherein, the tube pitch between each two PIN diode chip (12) is 1/4 wavelength, and this wavelength refers to that microwave signal is being situated between
The wavelength of transmission on matter substrate.
There is the PIN switch of high stable isolation the most as claimed in claim 1, it is characterised in that on each medium substrate
Microwave signal conduction band (15) is respectively provided with on the same line with the tube core of each PIN diode chip (12).
There is the PIN switch of high stable isolation the most as claimed in claim 2, it is characterised in that the top of each medium substrate
Face is arranged in same level with the end face of each PIN diode chip (12).
There is the PIN switch of high stable isolation the most as claimed in claim 3, it is characterised in that described cut down backing plate
(10) thickness that difference in height is medium substrate of the groove (101) on and tongue (102) and the thickness of PIN diode chip (12)
Difference.
There is the PIN switch of high stable isolation the most as claimed in claim 3, it is characterised in that described medium substrate is adopted
Use ceramic substrate.
There is the PIN switch of high stable isolation the most as claimed in claim 5, it is characterised in that described medium substrate bag
Contain:
Two external medium substrates (13), are separately positioned on and are positioned at two grooves (101) that can cut down backing plate (10) two ends, each
One end of the microwave signal conduction band (15) of external medium substrate (13) connects PIN diode chip (12), and the other end connects outside
Circuit；
Connect medium substrate (11) in multiple, be folded in respectively the groove (101) between two PIN diode chips (12) Nei, often
The two ends of the microwave signal conduction band (15) connecing medium substrate (11) in individual are all connected with PIN diode chip (12).
There is the PIN switch of high stable isolation the most as claimed in claim 6, it is characterised in that two described PIN bis-poles
Tube pitch between die (12) connects the length of medium substrate (11) and the length sum of PIN diode chip (12) in being.
There is the PIN switch of high stable isolation the most as claimed in claim 1, it is characterised in that described bonding line (14)
Use gold wire bonding line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610595020.7A CN106129542B (en) | 2016-07-26 | 2016-07-26 | A kind of PIN switches with high stable isolation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610595020.7A CN106129542B (en) | 2016-07-26 | 2016-07-26 | A kind of PIN switches with high stable isolation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106129542A true CN106129542A (en) | 2016-11-16 |
| CN106129542B CN106129542B (en) | 2018-09-28 |
Family
ID=57290251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610595020.7A Expired - Fee Related CN106129542B (en) | 2016-07-26 | 2016-07-26 | A kind of PIN switches with high stable isolation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106129542B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1557900A1 (en) * | 2004-01-22 | 2005-07-27 | Raafat R. Mansour | MEMS Based RF Components and a Method of Construction Thereof |
| JP4250520B2 (en) * | 2003-12-22 | 2009-04-08 | 京セラ株式会社 | Amplitude modulator for nonradiative dielectric lines. |
| CN102386239A (en) * | 2010-08-31 | 2012-03-21 | 中国科学院上海微系统与信息技术研究所 | Indium phosphide (InP)-based PIN switching diode of planar structure and preparation method of indium phosphide-based PIN switching diode |
| US20150206768A1 (en) * | 2012-12-28 | 2015-07-23 | Avogy, Inc. | Method and system for co-packaging gallium nitride electronics |
| CN205140965U (en) * | 2015-09-18 | 2016-04-06 | 中国工程物理研究院电子工程研究所 | Two -way withstand voltage carborundum solid -state switch |
-
2016
- 2016-07-26 CN CN201610595020.7A patent/CN106129542B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4250520B2 (en) * | 2003-12-22 | 2009-04-08 | 京セラ株式会社 | Amplitude modulator for nonradiative dielectric lines. |
| EP1557900A1 (en) * | 2004-01-22 | 2005-07-27 | Raafat R. Mansour | MEMS Based RF Components and a Method of Construction Thereof |
| CN102386239A (en) * | 2010-08-31 | 2012-03-21 | 中国科学院上海微系统与信息技术研究所 | Indium phosphide (InP)-based PIN switching diode of planar structure and preparation method of indium phosphide-based PIN switching diode |
| US20150206768A1 (en) * | 2012-12-28 | 2015-07-23 | Avogy, Inc. | Method and system for co-packaging gallium nitride electronics |
| CN205140965U (en) * | 2015-09-18 | 2016-04-06 | 中国工程物理研究院电子工程研究所 | Two -way withstand voltage carborundum solid -state switch |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106129542B (en) | 2018-09-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20130104387A1 (en) | On pcb dielectric waveguide | |
| EP2467897B1 (en) | Precision waveguide interface | |
| US9059516B2 (en) | 3D package device of photonic integrated chip matching circuit | |
| EP2862230A1 (en) | Directional coupler waveguide structure and method | |
| GB2324411A (en) | Lead frame structure and semiconductor package | |
| CN101252121A (en) | Stack package and method of manufacturing the same | |
| US8736074B2 (en) | Multi chip semiconductor device | |
| CN108493628A (en) | A kind of novel substrate integration wave-guide polar duplex antenna system | |
| US20110181375A1 (en) | Waveguide | |
| CN103762400A (en) | Method for using substrate integrated waveguide for communicating circuit structure and circuit transmission structure | |
| CN108886191A (en) | Broadband radio frequency circulator | |
| CN110226270A (en) | Optical module and CAN packaging part | |
| CN106129542A (en) | A kind of PIN switch with high stable isolation | |
| US8829659B2 (en) | Integrated circuit | |
| CN205609720U (en) | Millimeter wave directional coupler based on bayonet medium diaphragm | |
| CN207587947U (en) | A kind of W-waveband waveguide microstrip switching device | |
| CN104617366B (en) | The road power splitter of directrix plane high isolation four based on capacitance compensation | |
| KR100964984B1 (en) | Cavity resonator and filter | |
| US7119633B2 (en) | Compensated interdigitated coupler | |
| CN207474639U (en) | Aluminium nitride 30dB band pin coupling modules | |
| KR101874693B1 (en) | Microstrip circuit and apparatus for chip-to-chip interface comprising the same | |
| CN116315558A (en) | Transparent eight-path Wilkinson power divider based on reconfigurable output port | |
| CN113161312B (en) | Gradual-change gold-strip interconnection structure between chip and transmission line and assembly method thereof | |
| US8319586B2 (en) | Integrated circuit | |
| CN210723306U (en) | Slow wave matching circuit and gold wire bonding slow wave matching structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180928 Termination date: 20210726 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |