CN106129250A - A kind of preparation method of new polymers solaode based on Lorentz force - Google Patents

A kind of preparation method of new polymers solaode based on Lorentz force Download PDF

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Publication number
CN106129250A
CN106129250A CN201610505096.6A CN201610505096A CN106129250A CN 106129250 A CN106129250 A CN 106129250A CN 201610505096 A CN201610505096 A CN 201610505096A CN 106129250 A CN106129250 A CN 106129250A
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lorentz force
layer
preparation
photosensitive layer
new polymers
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CN106129250B (en
Inventor
王丽娟
范思大
张梁
张沛沛
闫闯
孙洋
孙丽晶
李占国
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Changchun University of Technology
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Changchun University of Technology
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H10K30/352—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The present invention proposes the preparation method of a kind of new polymers solaode based on Lorentz force, and preparation process is as follows: at glass substrate (1) sputtering indium-tin oxide anode (2), spin coating hole transmission layer (3)；In high-intensity magnetic field, grow the neodymium-iron-boron magnetic material (4 1) of one layer of 40 60 nm, be lithographically formed bar paten (4 1), vertical magnetic field direction, bar shaped direction；Drop coating or print donor and the polymer photoactive layer material (4 2) of receptor co-blended between the bar paten (4 1) being lithographically formed, forms the Lorentz force photosensitive layer (4) of strip magnetic material and the growth alternate with each other of bar shaped light-sensitive material；Spin coating electron transfer layer (5), AM aluminum metallization negative electrode (6).Setting up strip magnetic material and bar shaped light-sensitive material growth pattern alternate with each other, utilize the magnetic direction formed between each two strip magnetic materials consistent, strengthen electronics and move to cathode direction, hole is moved to anode direction.Be conducive to the electronics after exciton dissociation and hole to transmit to transport layer, reduce the compound of exciton, increase the thickness of photosensitive layer, be conducive to improving the electricity conversion of polymer solar battery.

Description

A kind of preparation method of new polymers solaode based on Lorentz force
Technical field
The present invention relates to the preparation method of a kind of new polymers solaode based on Lorentz force, belong to organic too Sun can cell art.
Background technology
Along with the exhaustion day by day of non-renewable energy, and the mankind are increasing to the demand of the energy, and solaode becomes The focus of current research.Up to the present, inorganic silica-based solar cell transformation efficiency has reached 24%, is the market mainstream. But it is faced with that manufacturing cost is high, the most portable, working condition is harsh, be difficult to the shortcomings such as processing, provides for follow-up study and choose War.Use the solaode of organic material, including sensitizing dyestuff solaode, polymer solar battery, little molecule too Sun energy battery, current transformation efficiency is about 9%.Polymer solar battery can use the method large area of printing to prepare, and becomes This is relatively low, is one of the most promising organic solar batteries.But electricity conversion is relatively low at present, limit polymer solar The main cause of battery efficiency is that the exciton that photosensitive layer produces is not readily separated, and hole and the electronics after separation is easily combined, Transmission range is only at about 10 nm, thus limits the thickness of photosensitive layer.
Therefore, for promoting the exciton dissociation of polymer solar battery, improve the hole after separating and electric transmission, this The bright preparation method devising a kind of new polymers solaode based on Lorentz force.Magnetic material is utilized to form photoetching After bar paten, and in the gap drop coating between two strip magnetic materials or print donor material and acceptor material and be blended Polymer photoactive material, the growth pattern that strip magnetic material is alternate with each other with bar shaped light-sensitive material.The light that photosensitive layer generates Raw carrier is acted on by Lorentz force in magnetic field, promotes that the electronics after exciton dissociation and hole are transmitted to transport layer, reduces Exciton compound, strengthens the thickness of photosensitive layer, is conducive to improving the electricity conversion of battery.
Summary of the invention
The present invention is the preparation method of a kind of new polymers solaode based on Lorentz force, utilizes moving charge Magnetic field is acted on by Lorentz force, promotes that the electronics after exciton dissociation and hole are transmitted to transport layer, decrease exciton Compound, increase the thickness of photosensitive layer, be conducive to improving the electricity conversion of battery.
The present invention is the preparation method of a kind of new polymers solaode based on Lorentz force, and battery structure includes Glass substrate, anode electrode, hole transmission layer, Lorentz force photosensitive layer, electron transfer layer, cathode electrode, as shown in Figure 1.Its Lorentz force photosensitive layer uses the growth pattern that strip magnetic material is alternate with each other with bar shaped light-sensitive material, as shown in Figure 2.Long-range navigation Hereby power photosensitive layer uses the neodymium-iron-boron magnetic material growing one layer of 40-60 nm in high-intensity magnetic field, by being lithographically formed bar diagram Case, vertical magnetic field direction, bar shaped direction.In the gap drop coating between two strip magnetic materials or print donor material and being subject to The polymer photoactive material that body material is blended.Free electron and hole after the exciton dissociation that light-sensitive material produces are subject in magnetic field Lorentz force, makes electronics move to cathode direction, and hole is moved to anode direction, improves the electricity conversion of battery.
Accompanying drawing explanation
Fig. 1 is new polymers solar battery structure schematic diagram based on Lorentz force.
Fig. 2 is new polymers solaode Lorentz force photosensitive layer structural representation.
Detailed description of the invention
Below in conjunction with embodiment, the present invention is further elaborated, but is not to limit the invention.
As it is shown in figure 1, N used after over cleaning by the glass substrate with tin indium oxide (ITO)2Distilled water by ITO surface Dry up, be placed in the oven for drying of 60 DEG C.Ito glass surface spin coating one floor height Molecularly Imprinted Polymer PEDOT:PSS after cleaning is empty Cave transport layer.PEDOT:PSS is first with spin coating after the water system membrane filtration of 0.45 m.Spin coating revolution is 3000 rpm, and the time is 20 S, forms hole transmission layer.
In high-intensity magnetic field, grow the neodymium-iron-boron magnetic material of one layer of 50 nm, coat a layer photoetching glue, with having bar paten Mask plate be exposed, then develop, use wet etching magnetic material layer is performed etching, finally remove photoresist formation magnetic Property material bar paten, vertical magnetic field direction, bar shaped direction.
The mixing of drop coating poly-3-hexyl thiophene (P3HT) donor and [6,6]-phenyl-C61-methyl butyrate (PCBM) receptor is molten Liquid, the mixing ratio of P3HT and PCBM is 1:1, chloroform solvent, and blend solution concentration is 20 mg/mL.Under nitrogen protection, temperature Spending 120 DEG C, annealing time is 10 min.The interval of magnetic material bar shaped pattern is formed photosensitive layer, constitutes Lorentz force light Photosensitive layer, as shown in Figure 2.Novel photosensitive layer grows one layer of LiF or MoO3, form electron transfer layer, then growth one layer 100 Nm aluminum cathode electrode.Obtain new polymers solaode based on Lorentz force.

Claims (5)

1. the preparation method of a new polymers solaode based on Lorentz force, it is characterised in that include following glass Glass substrate (1), indium-tin oxide anode (2), hole transmission layer (3), Lorentz force photosensitive layer (4), electron transfer layer (5), aluminum is cloudy Pole (6).
The preparation method of a kind of new polymers solaode based on Lorentz force the most according to claim 1, its It is characterised by Lorentz force photosensitive layer (4), uses strip magnetic material (4-1) and bar shaped light-sensitive material (4-2) alternate with each other Growth pattern.
The preparation method of a kind of new polymers solaode based on Lorentz force the most according to claim 1, its It is characterised by Lorentz force photosensitive layer (4), high-intensity magnetic field grows the neodymium-iron-boron magnetic material (4-1) of one layer of 40-60 nm.
The preparation method of a kind of new polymers solaode based on Lorentz force the most according to claim 1, its Being characterised by Lorentz force photosensitive layer (4), magnetic material is lithographically formed bar paten (4-1), vertical magnetic field direction, bar shaped direction.
The preparation method of a kind of new polymers solaode based on Lorentz force the most according to claim 1, its Being characterised by Lorentz force photosensitive layer (4), between the bar paten (4-1) being lithographically formed, drop coating or printing donor and receptor are altogether The polymer photoactive layer material (4-2) of mixing.
CN201610505096.6A 2016-07-01 2016-07-01 A kind of preparation method of the polymer solar battery based on Lorentz force Expired - Fee Related CN106129250B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110504372A (en) * 2018-05-16 2019-11-26 Tcl集团股份有限公司 Light emitting diode with quantum dots and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100959760B1 (en) * 2008-12-18 2010-05-25 재단법인대구경북과학기술원 Photovoltaic cell and method of manufacturing the same
CN101882665A (en) * 2010-06-24 2010-11-10 电子科技大学 Organic photoelectric device and preparation method thereof
CN101924184A (en) * 2010-07-09 2010-12-22 电子科技大学 Organic thin film solar cell and preparation method thereof
CN102368538A (en) * 2011-09-19 2012-03-07 中国科学院光电技术研究所 Organic thin-film solar cell capable of improving light absorption efficiency
WO2012125816A1 (en) * 2011-03-15 2012-09-20 Xunlight 26 Solar, Llc Intrinsically semitransparent solar cell and method of making same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100959760B1 (en) * 2008-12-18 2010-05-25 재단법인대구경북과학기술원 Photovoltaic cell and method of manufacturing the same
CN101882665A (en) * 2010-06-24 2010-11-10 电子科技大学 Organic photoelectric device and preparation method thereof
CN101924184A (en) * 2010-07-09 2010-12-22 电子科技大学 Organic thin film solar cell and preparation method thereof
WO2012125816A1 (en) * 2011-03-15 2012-09-20 Xunlight 26 Solar, Llc Intrinsically semitransparent solar cell and method of making same
CN102368538A (en) * 2011-09-19 2012-03-07 中国科学院光电技术研究所 Organic thin-film solar cell capable of improving light absorption efficiency

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110504372A (en) * 2018-05-16 2019-11-26 Tcl集团股份有限公司 Light emitting diode with quantum dots and preparation method thereof

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