CN106129247B - A method of organic thin-film transistor insulation layer is optimized by double cross-linking reactions - Google Patents
A method of organic thin-film transistor insulation layer is optimized by double cross-linking reactions Download PDFInfo
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- CN106129247B CN106129247B CN201610768689.1A CN201610768689A CN106129247B CN 106129247 B CN106129247 B CN 106129247B CN 201610768689 A CN201610768689 A CN 201610768689A CN 106129247 B CN106129247 B CN 106129247B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
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- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The present invention relates to a kind of methods optimized to organic thin-film transistor insulation layer by double cross-linking reactions, provide an Organic Thin Film Transistors, which includes the substrate set gradually from bottom to top, insulating layer, active layer and source-drain electrode；Insulating layer is by using solwution method, and it utilizes on the grid of spin coating proceeding or doctor blade process in the substrate after formation insulating layer film, liquid organic molecule monomer solution is penetrated into the insulating layer, and pass through UV light processings, so that the small molecule monomer polymerizing curable in the small molecular monomer solution is embedded in the reticular structure of insulating layer, surface of insulating layer is modified.The method that surface of insulating layer proposed by the present invention is modified, operating method is simple, conveniently, modified effect it is apparent, the leakage current of Organic Thin Film Transistors can be effectively reduced and improve the mobility of Organic Thin Film Transistors.
Description
Technical field
The present invention relates to machine field of photovoltaic materials, especially a kind of to inject interpenetrating network polymers to organic thin by surface
The method of film transistor insulating layer optimization.
Background technology
Insulating layer as Organic Thin Film Transistors important component, effect primarily serve isolated gate and active layer or
The effect of source-drain electrode, insulating layer will not only have lower leakage current and higher capacitance, but also can be formed with active layer good
Good contact surface, cannot have an impact the growth of active layer film.Inorganic material and organic material in Organic Thin Film Transistors
Material can be used for preparing insulating layer.The most commonly used is SiO2, it have preferable insulation characterisitic, but cannot with it is organic
Film contacts form preferable contact interface, are modified when preparing active layer on it, prepare SiO in addition2Generally adopt
With thermally grown method, manufacturing cost is higher.
Preparing insulating layer using organic material has many merits, prepares the technique item for not needing the harshness such as high vacuum high temperature
Part, cost of manufacture is relatively low, and organic insulating film can preferably match the active layer of organic material preparation, contribute to form
The contact interface of good insulating film and active layer.Although organic insulating material possesses many merits, organic insulating material is deposited
The performance of device is influenced the shortcomings of easy to aging and not fine and close.With new material and to seek new process organic to improve
Insulating layer material performance, the performance to improving Organic Thin Film Transistors have great importance.
Invention content
The purpose of the present invention is to provide a kind of sides optimized to organic thin-film transistor insulation layer by double cross-linking reactions
Method, to overcome defect existing in the prior art.
To achieve the above object, the technical scheme is that：One kind is by double cross-linking reactions to Organic Thin Film Transistors
The method of insulating layer optimization, provides an Organic Thin Film Transistors, which includes setting gradually from bottom to top
Substrate, insulating layer, active layer and source-drain electrode；The insulating layer utilizes spin coating proceeding or blade coating by using solwution method
After technique forms insulating layer film on the grid in the substrate, liquid organic molecule monomer solution is penetrated into the insulating layer
In, and pass through UV light processings, so that the small molecule monomer polymerizing curable in the small molecular monomer solution is embedded in the netted of insulating layer
In structure, be modified the surface of insulating layer.
In an embodiment of the present invention, the solution used in the solwution method is polyvinyl phenol, poly-methyl methacrylate
Ester, polyvinyl alcohol or perfluorinated resin；The liquid organic molecule monomer solution is using methacrylic acid, methyl methacrylate
Ester, 2- hydroxyethyl methacrylate or ethylene glycol dimethacrylate.
In an embodiment of the present invention, the film thickness of the insulating layer film is 500nm to 2000nm, and passes through heat cross-linking or light
The polymer of reticular structure is generated after cross-linking reaction.
In an embodiment of the present invention, the substrate includes substrate and grid；The substrate uses and has prepared grid
Flexible material or hard material；The flexible material includes PET and PI containing ito film；The hard material includes highly doped
Miscellaneous silicon chip and ito glass；
The active layer by using spin coating proceeding, scrape figure technique or prepared by InkJet printing processes；
The material that the source-drain electrode uses is Au, Ag or Al.
In an embodiment of the present invention, this method is suitable for preparing having for bottom gate top contact structure or bottom gate bottom contact structures
Machine thin film transistor (TFT).
In an embodiment of the present invention, the preparation of the Organic Thin Film Transistors of bottom gate top contact structure is prepared by this method
Steps are as follows：
Step S11：The substrate of wash clean is got out, which uses hard material, including highly doped silicon chip or ITO glass
Glass；Or the flexible material of grid has been prepared, include PET and PI containing ito film；
Step S12：One layer of 500nm is prepared extremely in the substrate in the step S11 using spin coating proceeding or doctor blade process
The insulating layer of thin-film of 2000nm, and by heat cross-linking or the polymer of photo-crosslinking formation reticular structure；
Step S13：Liquid organic molecule monomer solution is dropped on the insulating layer mould using rubber head dropper, and is paved with
Entire surface of insulating layer, is then allowed to stand；
Step S14：It is using the spin coater of high speed rotating speed, the liquid organic molecule monomer of insulating layer film excess surface is molten
Liquid is disposed by centrifugal force；
Step S15：The sample for the insulating layer for penetrating into liquid organic molecule monomer solution is put and is irradiated in the UV lamp, is made
Photo-crosslinking occurs in it, makes its polymerizing curable；
Step S16：Using spin coating proceeding, scrape figure technique or InkJet printing processes prepare the active layer of 30nm to 50nm；
Step S17：Source-drain electrode is really plated out by the way of thermal evaporation and using mask plate.
In an embodiment of the present invention, the preparation of the Organic Thin Film Transistors of bottom gate bottom contact structures is prepared by this method
Steps are as follows：
Step S21：The substrate of wash clean is got out, which uses hard material, including highly doped silicon chip or ITO glass
Glass；Or the flexible material of grid has been prepared, include PET and PI containing ito film；
Step S22：One layer of 500nm is prepared extremely in the substrate in the step S11 using spin coating proceeding or doctor blade process
The insulating layer of thin-film of 2000nm, and by heat cross-linking or the polymer of photo-crosslinking formation reticular structure；
Step S23：Liquid organic molecule monomer solution is dropped on the insulating layer mould using rubber head dropper, and is paved with
Entire surface of insulating layer, is then allowed to stand；
Step S24：It is using the spin coater of high speed rotating speed, the liquid organic molecule monomer of insulating layer film excess surface is molten
Liquid is disposed by centrifugal force；
Step S25：The sample for the insulating layer for penetrating into liquid organic molecule monomer solution is put and is irradiated in the UV lamp, is made
Photo-crosslinking occurs in it, makes its polymerizing curable；
Step S26：Source-drain electrode is really plated out by the way of thermal evaporation and using mask plate；
Step S27：Using spin coating proceeding, scrape figure technique or InkJet printing processes prepare the active layer of 30nm to 50nm.
In an embodiment of the present invention, the EGDMA crosslinking agents of the BASF photoinitiator of 1-3% mass and 3% mass is complete
Fully dissolved is in liquid organic molecule monomer solution, wherein EGDMA can be used as crosslinking agent, also can be to make liquid small molecule
Monomer.
In an embodiment of the present invention, the liquid small molecular monomer solution stands 1s to 5s in surface of insulating layer, obtains
The organic molecule monomer layer of different permeability-thickness.
In an embodiment of the present invention, the spin coater using the rotating speed of 3000 rpm to 5000 rpm by surface of insulating layer
Extra organic molecule monomer solution is disposed, to keep the lower surface roughness of insulating surface.
In an embodiment of the present invention, using the ultraviolet light of long-wave band, and by ultraviolet lamp apart from the surface of insulating layer
10min is irradiated in the range of 2cm to 10cm, and the complete polymerizing curable of liquid organic molecule monomer is embedded in the insulating layer
In.
Compared to the prior art, the invention has the advantages that：What the method provided through the invention made has
Machine thin film transistor (TFT) increases insulating layer of thin-film and adds fine and close and improvement surface of insulating layer chemistry by being modified to surface of insulating layer
Performance and film morphology, to improve the mobility of the thin film transistor (TFT) and reduce the leakage current of thin film transistor (TFT).In the present invention
Used photo-crosslinking mode, it is easy to operate, it is at low cost, be conducive to promote the use, have significant economic and society's effect
Benefit, and obtained Organic Thin Film Transistors has preferable photoelectric properties.
Description of the drawings
Fig. 1 is employed in a kind of method optimized to organic thin-film transistor insulation layer by double cross-linking reactions of the present invention
Organic Thin Film Transistors three dimensional structure diagram, wherein：100 be source-drain electrode, and 110 be organic semiconductor layer, and 120 be warp
The insulating layer of surface modification is crossed, 130 mix silicon for P-type height.
Fig. 2（a）It is real in a kind of organic thin film transistor device optimization method being modified based on surface of insulating layer of the present invention
Example 1 carry out surface before modified after contact angle test chart.
Fig. 2（b）It is real in a kind of organic thin film transistor device optimization method being modified based on surface of insulating layer of the present invention
Example 2 carry out surface before modified after contact angle test chart.
Fig. 2（c）It is real in a kind of organic thin film transistor device optimization method being modified based on surface of insulating layer of the present invention
Example 3 carry out surface before modified after contact angle test chart.
Fig. 2（d）It is real in a kind of organic thin film transistor device optimization method being modified based on surface of insulating layer of the present invention
Example 4 carry out surface before modified after contact angle test chart.
Fig. 3（a）It is real in a kind of organic thin film transistor device optimization method being modified based on surface of insulating layer of the present invention
Example 1 carry out surface before modified after atomic force microscopy diagram.
Fig. 3（b）It is real in a kind of organic thin film transistor device optimization method being modified based on surface of insulating layer of the present invention
Example 2 carry out surface before modified after atomic force microscopy diagram.
Fig. 3（c）It is real in a kind of organic thin film transistor device optimization method being modified based on surface of insulating layer of the present invention
Example 3 carry out surface before modified after atomic force microscopy diagram.
Fig. 3（d）It is real in a kind of organic thin film transistor device optimization method being modified based on surface of insulating layer of the present invention
Example 4 carry out surface before modified after atomic force microscopy diagram.
Fig. 4 be example 1 in a kind of organic thin film transistor device optimization method being modified based on surface of insulating layer of the present invention,
2, the leakage current of device changes size afterwards before modified on 3,4 progress surfaces.
Fig. 5 be example 1 in a kind of organic thin film transistor device optimization method being modified based on surface of insulating layer of the present invention,
2,3,4 carry out surfaces before modified after device transfer characteristic curve situation of change.
Specific implementation mode
Below in conjunction with the accompanying drawings, technical scheme of the present invention is specifically described.
The present invention, which provides, a kind of to be injected interpenetrating network polymers by surface and optimizes to organic thin-film transistor insulation layer
Method provides an Organic Thin Film Transistors, the Organic Thin Film Transistors include the substrate set gradually from bottom to top, insulating layer,
Active layer and source-drain electrode；The insulating layer utilizes spin coating proceeding or doctor blade process in the base by using solwution method
After forming insulating layer film on grid in bottom, liquid organic molecule monomer solution is penetrated into the insulating layer, and passes through UV light
Processing makes small molecule monomer polymerizing curable in the small molecular monomer solution be embedded in the reticular structure of insulating layer, carries out pair
The surface of insulating layer is modified.Wherein, as shown in Figure 1,100 be source-drain electrode, 110 be organic semiconductor layer, and 120 is by tables
The insulating layer that face is modified, 130 mix silicon for P-type height.
Further, in the present embodiment, the solution used in the solwution method is polyvinyl phenol（PVP）, poly- methyl
Methyl acrylate（PMMA）, polyvinyl alcohol（PVA）Or perfluorinated resin（CYTOP）；The liquid organic molecule monomer solution is adopted
Use methacrylic acid（MAA）, methyl methacrylate (MMA), 2- hydroxyethyl methacrylate (2-HEMA) or dimethyl
Acrylic acid glycol ester (EGDMA).
Further, in the present embodiment, the film thickness of the insulating layer film be 500nm to 2000nm, and pass through heat cross-linking
Or the polymer of reticular structure is generated after photo-crosslinking.
Further, in the present embodiment, the substrate includes substrate and grid；The substrate uses and has prepared grid
Flexible material or hard material；The flexible material includes PET and PI containing ito film；The hard material includes height
Doped silicon wafer and ito glass；
The active layer by using spin coating proceeding, scrape figure technique or prepared by InkJet printing processes；
The material that the source-drain electrode uses is Au, Ag or Al.
Further, in the present embodiment, this method is suitable for preparing bottom gate top contact structure or bottom gate bottom contact structures
Organic Thin Film Transistors.
Preferably, preparing the Organic Thin Film Transistors of bottom gate top contact structure by using the method proposed in the present invention
Preparation process it is as follows：
Step S11：The substrate of wash clean is got out, which uses hard material, including highly doped silicon chip or ITO glass
Glass；Or the flexible material of grid has been prepared, include PET and PI containing ito film；
Step S12：One layer of 500nm is prepared extremely in the substrate in the step S11 using spin coating proceeding or doctor blade process
The insulating layer of thin-film of 2000nm, and by heat cross-linking or the polymer of photo-crosslinking formation reticular structure；
Step S13：Liquid organic molecule monomer solution is dropped on the insulating layer mould using rubber head dropper, and is paved with
Entire surface of insulating layer, is then allowed to stand；
Step S14：It is using the spin coater of high speed rotating speed, the liquid organic molecule monomer of insulating layer film excess surface is molten
Liquid is disposed by centrifugal force；
Step S15：The sample for the insulating layer for penetrating into liquid organic molecule monomer solution is put and is irradiated in the UV lamp, is made
Photo-crosslinking occurs in it, makes its polymerizing curable；
Step S16：Using spin coating proceeding, scrape figure technique or InkJet printing processes prepare the active layer of 30nm to 50nm；
Step S17：Source-drain electrode is really plated out by the way of thermal evaporation and using mask plate.
In the present embodiment, by the BASF photoinitiator of 1-3% mass（Irgacure 651）With the crosslinking agent of 3% mass
（EGDMA）It is dissolved completely in liquid organic molecule monomer solution, wherein EGDMA can be used as crosslinking agent, also can be to make liquid
State small molecule monomer.The liquid small molecular monomer solution stands 1s to 5s in surface of insulating layer, obtains different permeability-thickness
Organic molecule monomer layer, wherein standing the best results of 2s.The spin coater uses the rotating speed of 3000 rpm to 5000 rpm
The extra organic molecule monomer solution of surface of insulating layer is disposed, to keep the lower surface roughness of insulating surface.Make
With the ultraviolet light of long-wave band, and ultraviolet lamp is irradiated into 10min in the range of apart from the surface of insulating layer 2cm to 10cm, it will
The complete polymerizing curable of liquid organic molecule monomer is embedded in the insulating layer.
Preferably, preparing the Organic Thin Film Transistors of bottom gate bottom contact structures by using the method proposed in the present invention
Preparation process it is as follows：
Step S11：The substrate of wash clean is got out, which uses hard material, including highly doped silicon chip or ITO glass
Glass；Or the flexible material of grid has been prepared, include PET and PI containing ito film；
Step S12：One layer of 500nm is prepared extremely in the substrate in the step S11 using spin coating proceeding or doctor blade process
The insulating layer of thin-film of 2000nm, and by heat cross-linking or the polymer of photo-crosslinking formation reticular structure；
Step S13：Liquid organic molecule monomer solution is dropped on the insulating layer mould using rubber head dropper, and is paved with
Entire surface of insulating layer, is then allowed to stand；
Step S14：It is using the spin coater of high speed rotating speed, the liquid organic molecule monomer of insulating layer film excess surface is molten
Liquid is disposed by centrifugal force；
Step S15：The sample for the insulating layer for penetrating into liquid organic molecule monomer solution is put and is irradiated in the UV lamp, is made
Photo-crosslinking occurs in it, makes its polymerizing curable；
Step S16：Source-drain electrode is really plated out by the way of thermal evaporation and using mask plate；
Step S17：Using spin coating proceeding, scrape figure technique or InkJet printing processes prepare the active layer of 30nm to 50nm.
Further, in the present embodiment, by the BASF photoinitiator of 1-3% mass（Irgacure 651）With 3% matter
The crosslinking agent of amount（EGDMA）It being dissolved completely in liquid organic molecule monomer solution, wherein EGDMA can be used as crosslinking agent,
Also can be to make liquid small molecule monomer.The liquid small molecular monomer solution stands 1s to 5s in surface of insulating layer, obtains difference
The organic molecule monomer layer of permeability-thickness, wherein standing the best results of 2s.The spin coater uses 3000 rpm to 5000
The rotating speed of rpm disposes the extra organic molecule monomer solution of surface of insulating layer, to keep the lower surface of insulating surface
Roughness.It is irradiated in the range of apart from the surface of insulating layer 2cm to 10cm using the ultraviolet light of long-wave band, and by ultraviolet lamp
The complete polymerizing curable of liquid organic molecule monomer is embedded in the insulating layer by 10min.
A kind of organic thin-film transistor being modified based on surface of insulating layer of invention is illustrated with reference to the accompanying drawings and embodiments
Tube device optimization method.The present invention provides preferred embodiment, but should not be considered limited to embodiment set forth herein.
The present invention will be described in further detail by specific embodiment below.
In the present embodiment, the structure of Organic Thin Film Transistors as shown in Figure 1, be followed successively by substrate, grid, insulation from the bottom up
Layer, active layer, source-drain electrode.The substrate and grid material used is that p-type height mixes silicon chip, and insulating layer material is polyvinyl phenol
（PVP）With organic insulation photo polymerization monomer, active layer material is PDVT-8 semi-conducting polymers, the thick gold of source and drain extremely 50nm, tool
The operating procedure of body is as follows：
Step 1：The silicon chip of 1.5cm × 2cm sizes will have been cut through acetone, isopropanol, chloroform, distilled water（Three
It is secondary）Cleaning, after dried up with nitrogen after obtain clean silicon chip.
Step 2：The PVP solution of 150mg/ml is dripped into full silicon chip by filtering plug, after by way of spin coating with
2000rpm（30s）Rotating speed so that PVP solution is formed uniform film in silicon chip, then silicon chip is moved into and carries out 120 DEG C in glove box
（2h）Cross-linking reaction prepare one layer of 850nm insulating layer of thin-film.
Step 3：Upper small molecular monomer solution is dripped on the sample for having prepared PVP insulating layer of thin-film, wherein organic liquor
State small molecule monomer：EGDMA:Photoinitiator Irgacure 651=96:3:1, use 5000rpm after standing 1s-5s（60s）Turn
Speed disposes the extra small molecular monomer solution of surface of insulating layer by centrifugal force.
Step 4：Sample is placed under distance wave band, high-power ultraviolet lamp illumination ten minutes in the range of 2cm-10cm.
Step 5：Use 1000rpm（60s）Rotating speed spin coating PDVT-8 solution prepare active layer and under the conditions of 150 DEG C
Heat 10 min.
Step 6：Source-drain electrode is deposited out by mask plate special using the method for thermal evaporation on this sample, electrode is thick
Degree is 50nm.
Technique effect in order to further illustrate the present invention, lower mask body combine different embodiments to carry out comparative illustration.
Embodiment 1
1）By size be 1.5cm × 2cm P-type wafer through acetone, isopropanol, chloroform, distilled water（Three times）Cleaning
Afterwards, then nitrogen is used to dry up to obtain clean silicon chip as grid.
2）The PVP solution of 150mg/ml is paved with silicon chip using the syringe with 0.22um filtering plugs, after use 2000rpm
（30s）Rotating speed so that PVP solution is formed uniform film in silicon chip, then silicon chip is moved into and carries out 120 DEG C in glove box（2h）Friendship
Connection reaction prepares the insulating layer of thin-film of one layer of 850nm.
3）Semi-conducting polymer PDVT-8 is dissolved in 5mg/ml in chloroform, 1000rpm is used（60s）Rotating speed
Spin coating PDVT-8 solution prepares active layer, after heat 10 min under the conditions of 150 DEG C.
4）Ditch Taoist priest finally is deposited out on the silicon chip obtained by step 5) using mask plate special by the way of thermal evaporation
For 30um, width is the 50nm thick source drain electrodes of 1mm.
Embodiment 2
1）By size be 1.5cm × 2cm P-type wafer through acetone, isopropanol, chloroform, distilled water（Three times）Cleaning
Afterwards, then nitrogen is used to dry up to obtain clean silicon chip as grid.
2）The PVP solution of 150mg/ml is paved with silicon chip using the syringe with 0.22um filtering plugs, after use 2000rpm
（30s）Rotating speed so that PVP solution is formed uniform film in silicon chip, then silicon chip is moved into and carries out 120 DEG C in glove box（2h）Friendship
Connection reaction prepares the insulating layer of thin-film of one layer of 850nm.
3）Full methacrylic acid (MAA) small molecular monomer solution is dripped on the sample for prepared insulating layer of thin-film, wherein
MAA liquid small molecule monomers：EGDMA：Photoinitiator Irgacure 651=96:3:1, use 5000rpm after standing 2s（60）'s
Rotating speed disposes the extra small molecular monomer solution of surface of insulating layer.
4）The Philip ultraviolet lamp for preparing a 40w-BL model, the range away from 2cm-10cm under ultraviolet lamp is placed on by sample
Interior illumination ten minutes.
5）Semi-conducting polymer PDVT-8 is dissolved in 5mg/ml in chloroform, 1000rpm is used（60s）Rotating speed
Spin coating PDVT-8 solution prepares active layer, after heat 10 min under the conditions of 150 DEG C.
6）Ditch Taoist priest finally is deposited out on the silicon chip obtained by step 5) using mask plate special by the way of thermal evaporation
For 30um, width is the 50nm thick source drain electrodes of 1mm.
Insulating layer of thin-film the contact angle characterization such as Fig. 2 prepared in embodiment 1 and embodiment 2（a）、2（b）It is shown, before modified
Contact angle afterwards is reduced to 27.48 ° from 32.08 °, illustrates that the wetability of film and solutions of organic semiconductors becomes more preferable；AFM is thin
Film surface such as Fig. 3（a）、3（b）Shown, surface roughness is reduced to the nm of Rq=0.337 by the nm of Rq=0.666, is film surface
It is more smooth to be conducive to electron-transport；The film leakage current of mim structure tests the leakage as shown in figure 4, under the conditions of -40 volt
Current density is from 1.81 × 10-5A .cm-2It is reduced to 6.85 × 10-6A .cm-2；OTFT transfer characteristic curves are as shown in figure 5, crystalline substance
The mobility of body pipe is from 0.08 cm2/ Vs increases to 0.33 cm2/ Vs, illustrate through the advantageous modified film pattern of the embodiment and
Device performance.
Embodiment 3
1）By size be 1.5cm × 2cm P-type wafer through acetone, isopropanol, chloroform, distilled water（Three times）And nitrogen
Clean silicon chip is obtained as grid after air-blowing is dry.
2）The PVP solution of 150mg/ml is paved with silicon chip using the syringe with 0.22um filtering plugs, after use 2000rpm
（30s）Rotating speed so that PVP solution is formed uniform film in silicon chip, then silicon chip is moved into and carries out 120 DEG C in glove box（2h）Friendship
Connection reaction prepares the insulating layer of thin-film of one layer of 850nm.
3）Full methyl methacrylate is dripped on the sample for prepared insulating layer of thin-film（MMA）Small molecular monomer solution,
Wherein, MMA liquid small molecule monomer：EGDMA：Photoinitiator Irgacure 651=96:3:1, use 5000rpm after standing 2s
（60s）Rotating speed the extra small molecular monomer solution solution removal of surface of insulating layer is fallen.
4）The Philip ultraviolet lamp for preparing a 40w-BL model, the range away from 2cm-10cm under ultraviolet lamp is placed on by sample
Interior illumination ten minutes.
5）Semi-conducting polymer PDVT-8 is dissolved in 5mg/ml in chloroform, 1000rpm is used（60s）Rotating speed
Spin coating PDVT-8 solution prepares active layer, after heat 10 min under the conditions of 150 DEG C.
6）Ditch Taoist priest finally is deposited out on the silicon chip obtained by step 5) using mask plate special by the way of thermal evaporation
For 30um, width is the 50nm thick source drain electrodes of 1mm.
Insulating layer of thin-film the contact angle characterization such as Fig. 2 that embodiment 1 is prepared with embodiment 3（a）、2（c）It is shown, before modified after
Contact angle be reduced to 16.32 ° from 32.08 °, illustrate that the wetability of film and solutions of organic semiconductors becomes more preferable；AFM films
Surface such as Fig. 3（a）、3（c）Shown, surface roughness is reduced to Rq=0.195nm by Rq=0.666nm, be film surface more
It is smooth to be conducive to electron-transport；The film leakage current of mim structure tests the leakage current as shown in figure 4, under the conditions of -40 volt
Density is from 1.81 × 10-5A .cm-2It is reduced to 3.2 × 10-6A .cm-2；OTFT transfer characteristic curves are as shown in figure 5, transistor
Mobility is from 0.08 cm2/ Vs increases to 1.09 cm2/ Vs illustrates to pass through the advantageous modified film pattern of the embodiment and device
Energy.
Embodiment 4
1）By size be 1.5cm × 2cm P-type wafer through acetone, isopropanol, chloroform, distilled water（Three times）And nitrogen
Clean silicon chip is obtained as grid after air-blowing is dry.
2）The PVP solution of 150mg/ml is paved with silicon chip using the syringe with 0.22um filtering plugs, after use 2000rpm
（30s）Rotating speed so that PVP solution is formed uniform film in silicon chip, then silicon chip is moved into and carries out 120 DEG C in glove box（2h）Friendship
Connection reaction prepares the insulating layer of thin-film of one layer of 850nm.
3）Full ethylene glycol dimethacrylate (EGDMA) small molecule list is dripped on the sample for prepared insulating layer of thin-film
Liquid solution, wherein EGDMA liquid small molecule monomers：Photoinitiator Irgacure 651=99:1, use 5000rpm after standing 2s
（60 s）Rotating speed the extra small molecular monomer solution solution removal of surface of insulating layer is fallen.
4）The Philip ultraviolet lamp for preparing a 40w-BL model, the range away from 2cm-10cm under ultraviolet lamp is placed on by sample
Interior illumination ten minutes.
5）Semi-conducting polymer PDVT-8 is dissolved in 5mg/ml in chloroform, 1000rpm is used（60s）Rotating speed
Spin coating PDVT-8 solution prepares active layer, after heat 10 min under the conditions of 150 DEG C.
6）Ditch Taoist priest finally is deposited out on the silicon chip obtained by step 5) using mask plate special by the way of thermal evaporation
For 30um, width is the 50nm thick source drain electrodes of 1mm.
Insulating layer of thin-film the contact angle characterization such as Fig. 2 that embodiment 1 is prepared with embodiment 4（a）、2（d）It is shown, before modified after
Contact angle be reduced to 20.12 ° from 32.08 °, illustrate that the wetability of film and solutions of organic semiconductors becomes more preferable；AFM films
Surface such as Fig. 3（a）、3（d）Shown, surface roughness is reduced to Rq=0.278nm by Rq=0.666nm, be film surface more
It is smooth to be conducive to electron-transport；The film leakage current of mim structure tests the leakage current as shown in figure 4, under the conditions of -40 volt
Density is from 1.81 × 10-5A .cm-2It is reduced to 7.09 × 10-6A .cm-2；OTFT transfer characteristic curves are as shown in figure 5, transistor
Mobility from 0.08cm2/ Vs increases to 0.99cm2/ Vs illustrates to pass through the advantageous modified film pattern of the embodiment and device
Energy.
The above are preferred embodiments of the present invention, all any changes made according to the technical solution of the present invention, and generated function is made
When with range without departing from technical solution of the present invention, all belong to the scope of protection of the present invention.
Claims (10)
1. a kind of method optimized to organic thin-film transistor insulation layer by double cross-linking reactions, which is characterized in that providing one has
Machine thin film transistor (TFT), the Organic Thin Film Transistors include the substrate set gradually from bottom to top, insulating layer, active layer and source and drain
Electrode；The insulating layer utilizes spin coating proceeding or doctor blade process shape on the grid in the substrate by using solwution method
After insulating layer film, liquid organic molecule monomer solution is penetrated into the insulating layer, and passes through UV light processings, makes described small point
In the reticular structure of small molecule monomer polymerizing curable insertion insulating layer in sub- monomer solution, change the surface of insulating layer
Property.
2. a kind of method that organic thin-film transistor insulation layer is optimized by double cross-linking reactions according to claim 1,
It is characterized in that, the solution used in the solwution method is polyvinyl phenol, polymethyl methacrylate, polyvinyl alcohol or perfluor
Resin；The liquid organic molecule monomer solution is using methacrylic acid, methyl methacrylate, 2- hydroxy ethyl methyls third
Olefin(e) acid ester or ethylene glycol dimethacrylate.
3. a kind of method that organic thin-film transistor insulation layer is optimized by double cross-linking reactions according to claim 1,
It is characterized in that, the film thickness of the insulating layer film is 500nm to 2000nm, and net is generated after heat cross-linking or photo-crosslinking
The polymer of shape structure.
4. a kind of method that organic thin-film transistor insulation layer is optimized by double cross-linking reactions according to claim 1,
It is characterized in that, this method is suitable for preparing the Organic Thin Film Transistors of bottom gate top contact structure or bottom gate bottom contact structures.
5. a kind of method that organic thin-film transistor insulation layer is optimized by double cross-linking reactions according to claim 1,
It is characterized in that, the preparation process for preparing the Organic Thin Film Transistors of bottom gate top contact structure by this method is as follows：
Step S11：The substrate of wash clean is got out, which uses hard material, including highly doped silicon chip or ito glass；
Or the flexible material of grid has been prepared, include PET and PI containing ito film；
Step S12：One layer of 500nm is prepared extremely in the substrate in the step S11 using spin coating proceeding or doctor blade process
The insulating layer of thin-film of 2000nm, and by heat cross-linking or the polymer of photo-crosslinking formation reticular structure；
Step S13：Liquid organic molecule monomer solution is dropped on the insulating layer mould using rubber head dropper, and is paved with entire
Surface of insulating layer is then allowed to stand；
Step S14：Using the spin coater of high speed rotating speed, the liquid organic molecule monomer solution of insulating layer film excess surface is led to
Centrifugal force is crossed to dispose；
Step S15：The sample for the insulating layer for penetrating into liquid organic molecule monomer solution is put and is irradiated in the UV lamp, its hair is made
Third contact of a total solar or lunar eclipse cross-linking reaction makes its polymerizing curable；
Step S16：Using spin coating proceeding, scrape figure technique or InkJet printing processes prepare the active layer of 30nm to 50nm；
Step S17：Source-drain electrode is really plated out by the way of thermal evaporation and using mask plate.
6. a kind of method that organic thin-film transistor insulation layer is optimized by double cross-linking reactions according to claim 1,
It is characterized in that, the preparation process for preparing the Organic Thin Film Transistors of bottom gate bottom contact structures by this method is as follows：
Step S21：The substrate of wash clean is got out, which uses hard material, including highly doped silicon chip or ito glass；
Or the flexible material of grid has been prepared, include PET and PI containing ito film；
Step S22：One layer of 500nm is prepared extremely in the substrate in the step S21 using spin coating proceeding or doctor blade process
The insulating layer of thin-film of 2000nm, and by heat cross-linking or the polymer of photo-crosslinking formation reticular structure；
Step S23：Liquid organic molecule monomer solution is dropped on the insulating layer mould using rubber head dropper, and is paved with entire
Surface of insulating layer is then allowed to stand；
Step S24：Using the spin coater of high speed rotating speed, the liquid organic molecule monomer solution of insulating layer film excess surface is led to
Centrifugal force is crossed to dispose；
Step S25：The sample for the insulating layer for penetrating into liquid organic molecule monomer solution is put and is irradiated in the UV lamp, its hair is made
Third contact of a total solar or lunar eclipse cross-linking reaction makes its polymerizing curable；
Step S26：Source-drain electrode is really plated out by the way of thermal evaporation and using mask plate；
Step S27：Using spin coating proceeding, scrape figure technique or InkJet printing processes prepare the active layer of 30nm to 50nm.
7. a kind of side optimized to organic thin-film transistor insulation layer by double cross-linking reactions according to claim 5 or 6
Method, which is characterized in that the EGDMA crosslinking agents of the BASF photoinitiator of 1-3% mass and 3% mass, which are dissolved completely in liquid, to be had
Machine small molecular monomer solution, wherein EGDMA can be used as crosslinking agent, also can be to make liquid small molecule monomer.
8. a kind of side optimized to organic thin-film transistor insulation layer by double cross-linking reactions according to claim 5 or 6
Method, which is characterized in that the liquid organic molecule monomer solution stands 1s to 5s in surface of insulating layer, and it is thick to obtain different infiltrations
The organic molecule monomer layer of degree.
9. a kind of side optimized to organic thin-film transistor insulation layer by double cross-linking reactions according to claim 5 or 6
Method, which is characterized in that the spin coater is using the rotating speed of 3000 rpm to 5000 rpm by extra organic small of surface of insulating layer
Molecule monomer solution removal falls, so that the surface roughness of insulating surface is less than predetermined threshold value.
10. a kind of side optimized to organic thin-film transistor insulation layer by double cross-linking reactions according to claim 5 or 6
Method, which is characterized in that use the ultraviolet light of long-wave band, and by ultraviolet lamp in the model apart from the surface of insulating layer 2cm to 10cm
Interior irradiation 10min is enclosed, the complete polymerizing curable of liquid organic molecule monomer is embedded in the insulating layer.
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