CN106129100A - Organic light-emitting structure and manufacture method thereof - Google Patents
Organic light-emitting structure and manufacture method thereof Download PDFInfo
- Publication number
- CN106129100A CN106129100A CN201610817917.XA CN201610817917A CN106129100A CN 106129100 A CN106129100 A CN 106129100A CN 201610817917 A CN201610817917 A CN 201610817917A CN 106129100 A CN106129100 A CN 106129100A
- Authority
- CN
- China
- Prior art keywords
- electrode
- par
- insulating barrier
- emitting structure
- organic light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention provides a kind of organic light-emitting structure and manufacture method thereof, described organic light-emitting structure includes Semiconductor substrate, it is sequentially located at the planarization layer in described Semiconductor substrate, the first electrode, pixel confining layers, organic luminous layer and the second electrode, wherein, described first electrode includes par and is positioned at the lobe of described par surrounding, and the par of described first electrode and lobe reflect the light that described organic luminous layer sends；The lobe of described first electrode can to described organic luminous layer side to light reflect, which thereby enhance the luminous efficiency of organic light-emitting structure.
Description
Technical field
The present invention relates to technical field of semiconductors, be specifically related to a kind of organic light-emitting structure and manufacture method thereof.
Background technology
Organic Light Emitting Diode (OLED) is self luminous Display Technique, the luminous efficiency of OLED and selected luminous material
The design of material, backboard and peripheral cell is correlated with.OLED must reflect by feat of reflecting layer, to improve luminosity, enters
And increase relevant display performance.
OLED ray structure schematic diagram of the prior art sees described in Fig. 1.Described OLED ray structure includes quasiconductor
Substrate 10, the planarization layer 11 being sequentially located in described Semiconductor substrate 10, anode layer 12, pixel confining layers 13, organic light emission
Layer 14 and cathode layer 15.Anode layer 12 in this OLED ray structure has a reflecting layer, for producing organic luminous layer 14
Raw light reflects.Reflecting layer can be anode metal plane.Arrow in light such as Fig. 1 produced by this OLED ray structure
Shown in head, its light sent arbitrarily scatters.Some light do not penetrate from effective light-emitting zone, cause this OLED light-emitting junction
The whole lighting efficiency of structure is the highest.
Summary of the invention
It is an object of the invention to provide a kind of organic light-emitting structure and manufacture method thereof, improve sending out of organic light-emitting structure
Light efficiency.
For achieving the above object, the present invention provides a kind of organic light-emitting structure, including Semiconductor substrate, is sequentially located at described
Planarization layer, the first electrode, pixel confining layers, organic luminous layer and the second electrode in Semiconductor substrate, described first electricity
Pole includes par and is positioned at the lobe of described par surrounding, and the par of described first electrode and lobe reflection are described
The light that organic luminous layer sends.
Optionally, also include insulating barrier, be positioned on described planarization layer, the side of described insulating barrier and described planarization
Layer upper surface between formed acute angle, the flat part of described first electrode on described planarization layer, described first electrode
Boss is on the side of described insulating barrier.
Optionally, the described insulating barrier of described pixel confining layers encirclement, the lobe of described first electrode and part are described
The par of the first electrode.
Optionally, between side and the par upper surface of described first electrode of described pixel confining layers, form acute angle,
The structure of described pixel confining layers is identical with the structure of described insulating barrier.
Optionally, described organic luminous layer includes par and is positioned at the lobe of described par surrounding, described organic
The flat part of luminescent layer is on the par of described first electrode, and the boss of described organic luminous layer is in described pixel
On the side of confining layers.
Optionally, organic luminous layer described in described second electrodes surrounding and described pixel confining layers.
Optionally, the material of described insulating barrier is organic gel.
Accordingly, the present invention also provides for the manufacture method of a kind of organic light-emitting structure, including: semi-conductive substrate is provided,
Described quasiconductor sequentially forms planarization layer, the first electrode, pixel confining layers, organic luminous layer and the second electrode, its
In, described first electrode includes par and is positioned at the lobe of described par surrounding.
Optionally, after forming planarization layer on the semiconductor substrate, also include: formed on described planarization layer
Insulating barrier, and described insulating barrier is patterned, formed sharp between side and the described planarization layer of patterned insulating barrier
Angle.
Optionally, described planarization layer and described insulating barrier form the first electrode, the par of described first electrode
Being formed on described planarization layer, the lobe of described first electrode is formed on the side of described insulating barrier.
Compared with prior art, the organic light-emitting structure of present invention offer and having the beneficial effect that of manufacture method thereof:
The present invention by being set to par and being positioned at the lobe of described par surrounding by the first electrode, described
The par of the first electrode and lobe reflect the light that described organic luminous layer sends, and lobe can be to described organic light emission
Layer side to light reflect, which thereby enhance the luminous efficiency of organic light-emitting structure.
Accompanying drawing explanation
Fig. 1 is the structural representation of OLED ray structure in prior art.
The structural representation of the organic light-emitting structure that Fig. 2 provides for one embodiment of the invention.
The flow chart of the manufacture method of the organic light-emitting structure that Fig. 3 provides for one embodiment of the invention.
Detailed description of the invention
For making present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is done into one
Step explanation.Certainly the invention is not limited in that this specific embodiment, general replacement well known to the skilled artisan in the art are also contained
Lid is within the scope of the present invention.
Secondly, the present invention utilizes schematic diagram to carry out detailed statement, when describing present example in detail, for the ease of saying
Bright, schematic diagram, should be to this as the restriction of the present invention not according to general ratio partial enlargement.
The structural representation of the organic light-emitting structure that Fig. 2 is provided by one embodiment of the invention, as in figure 2 it is shown, the present invention
A kind of organic light-emitting structure is provided, including Semiconductor substrate 20, be sequentially located at the planarization layer 21 in described Semiconductor substrate 20,
First electrode 23, pixel confining layers 24, organic luminous layer 25 and the second electrode 26, described first electrode 23 includes par
231 and be positioned at the lobe 232 of described par 231 surrounding, form the shape that surrounding is protruding, the par of described first electrode
231 and lobe 232 reflect the light that described organic luminous layer 25 sends.
Described planarization layer 21 is also formed with insulating barrier 22, the side of described insulating barrier 22 and described planarization layer 21
Upper surface between formed acute angle, the size being smaller in size than lower surface of the upper surface of the most described insulating barrier 22, wherein, away from institute
The surface stating planarization layer 21 is upper surface, is lower surface near the surface of described planarization layer 21, as in figure 2 it is shown, in this reality
Executing in example, the longitudinal section of described insulating barrier 22 is round table-like.The par 231 of described first electrode is positioned at described planarization layer 21
On, the lobe 232 of described first electrode is positioned on the side of described insulating barrier 22.
It is described that described pixel confining layers 24 surrounds described insulating barrier 22, the lobe 232 of described first electrode and part
The par 231 of the first electrode, similar with described insulating barrier 22, the side of described pixel confining layers 24 and described first electrode
Acute angle is formed, it is preferred that the structure of described pixel confining layers 24 and the structure of described insulating barrier 22 between the upper surface of par 231
Similar, in the present embodiment, the longitudinal section of described pixel confining layers 24 is also in round table-like, and owing to described pixel confining layers 24 is wrapped
Enclosing described insulating barrier 22, the most described pixel confining layers 24 and described insulating barrier 22 can play the effect of support column, therefore exist
Without forming support column again in described organic light-emitting structure, thus save manufacturing process.
Described organic luminous layer 25 includes par 251 and is positioned at the lobe 252 of described par 251 surrounding, described
The par 251 of organic luminous layer is positioned on the par 231 of described first electrode, the lobe of described organic luminous layer
On 252 sides being positioned at described pixel confining layers 24.Described second electrode 26 surrounds described organic luminous layer 25 and described picture
Element confining layers 24.In the present embodiment, the material of described insulating barrier 22 is organic gel, or other materials well known by persons skilled in the art
Material.
Described second electrode 26 is transparency electrode, and described first electrode 23 has a reflecting layer, for described organic
The light that photosphere 25 sends reflects, and presss from both sides organic luminous layer 25 between described first electrode 23 and described second electrode 26,
When applying voltage between described first electrode 23 and described second electrode 26, electronics and hole are in described organic luminous layer 25
Meet compound, will emit beam.The light sent is after the reflection in the first electrode reflecting layer, saturating from the second electrode clear layer
Penetrate.Owing to described first electrode 23 surrounding in par 231 is provided with lobe 232, therefore, it is possible to described organic
Luminescent layer 25 side to light reflect, thus improve the luminous efficiency of organic light-emitting structure.
In this organic light-emitting structure, according to concrete application demand, the height of described insulating barrier 22 can be adjusted
Joint, thus regulate the height of the lobe 232 of described first electrode, to realize regulating the transmitting light from side surface of described organic light-emitting structure
Rate.Or, regulate the acute angle formed between described insulating barrier 22 and described planarization layer 21 upper surface, thus regulate described first
Angle between lobe 232 and the par 231 of electrode, to realize the angle of regulation output optical zone.Or, regulate described first
Par 231 and lobe 232 length in the horizontal direction of electrode, to realize the size of regulation output optical zone.
It should be noted that the above embodiment of the present invention is using the first electrode as reflecting layer, the second electrode is clear layer
As a example by illustrate.Being reflecting layer for other kinds of organic light-emitting structure, such as the second electrode, the first electrode is transparent knot
Structure, then can be set to the second electrode include par and be positioned at the lobe of described par surrounding, described second electricity
The par of pole and lobe reflect the light that described organic luminous layer sends, to improve luminous efficiency.The solution of the present invention pair
Organic light-emitting structure in variety classes and form all adapts to, its technical purpose not affecting the present invention and beneficial effect.
The flow chart of the manufacture method of the organic light-emitting structure that Fig. 3 is provided by one embodiment of the invention, as it is shown on figure 3,
The present invention provides the manufacture method of a kind of organic light-emitting structure, including: semi-conductive substrate is provided, sequentially forms smooth thereon
Change layer, the first electrode, pixel confining layers, organic luminous layer and the second electrode, wherein, described first electrode include par and
It is positioned at the lobe of described par surrounding.
Refer to Fig. 3, and combine shown in Fig. 2, describe the manufacture method of the organic light-emitting structure that the present invention proposes in detail.
First semi-conductive substrate 20 is provided, is formed on planarization layer 21, then shape on described planarization layer 21
Become insulating barrier 22, and described insulating barrier is patterned, such as, on described insulating barrier 22, form photoresist layer, to described light
Photoresist layer is exposed development and forms patterned photoresist layer, and the photoresist layer the most graphically changed is that mask is to described insulation
Layer 22 performs etching, and forms patterned insulating barrier, shape between side and the described planarization layer 21 of the insulating barrier ultimately formed
Acutangulate, the size being smaller in size than lower surface of the upper surface of the most described insulating barrier 22, wherein, away from described planarization layer 21
Surface is upper surface, is lower surface near the surface of described planarization layer 21, and in the present embodiment, the vertical of described insulating barrier 22 cuts
Face is round table-like, and the material of described insulating barrier 22 is organic gel, or other materials well known by persons skilled in the art.
Then on described planarization layer 21 and described insulating barrier 22, the first electrode 23 is formed, putting down of described first electrode 23
Smooth portion 231 is formed on described planarization layer 21, and the lobe 232 of described first electrode is formed at the side of described insulating barrier 22
On face, described first electrode 23 has a reflecting layer, can reflect the light being incident on described first electrode 23.
Then forming pixel confining layers 24, described pixel confining layers 24 surrounds described insulating barrier 22, described first electrode
Lobe 232 and the par 231 of described first electrode of part, similar with described insulating barrier 22, made described by etching
Acute angle is formed, it is preferred that described pixel between side and par 231 upper surface of described first electrode of pixel confining layers 24
The structure of confining layers 24 is identical with the structure of described insulating barrier 22, and in the present embodiment, the longitudinal section of described pixel confining layers 24 is also
In round table-like, and owing to described pixel confining layers 24 surrounds described insulating barrier 22, the most described pixel confining layers 24 is with described
Insulating barrier 22 can play the effect of support column, therefore without forming support column again in described organic light-emitting structure, thus saves
Save manufacturing process.
Forming organic luminous layer 25 on described first electrode 23 and pixel confining layers 24, described organic luminous layer 25 includes
Par 251 and the lobe 252 being positioned at described par 251 surrounding, the par 251 of described organic luminous layer is positioned at described
On the par 231 of the first electrode, the lobe 252 of described organic luminous layer is positioned at the side of described pixel confining layers 24
On.
Finally, forming the second electrode 26, described second electrode 26 is transparency electrode, surround described organic luminous layer 25 and
Described pixel confining layers 24.
When applying voltage between described first electrode 23 and described second electrode 26, electronics and hole are at described organic
Photosphere 25 meets compound, will emit beam.The light sent is after the reflection in the first electrode reflecting layer, from the second electrode
Clear layer transmission and go out.Owing to described first electrode 23 surrounding in par 231 is provided with lobe 232, therefore, it is possible to right
Described organic luminous layer 25 side to light reflect, thus improve the luminous efficiency of organic light-emitting structure.
In the manufacture method of this organic light-emitting structure, according to concrete application demand, can be to described insulating barrier 22
Highly it is adjusted, thus regulates the height of the lobe 232 of described first electrode, to realize regulating described organic light-emitting structure
Transmitting light from side surface rate.Or, regulate the acute angle formed between described insulating barrier 22 and described planarization layer 21 upper surface, thus adjust
Save the angle between lobe 232 and the par 231 of described first electrode, to realize the angle of regulation output optical zone.Or, adjust
Save par 231 and lobe 232 length in the horizontal direction of described first electrode, to realize the big of regulation output optical zone
Little.
In sum, the organic light-emitting structure of present invention offer and manufacture method thereof, by being set to put down by the first electrode
Smooth portion and the lobe being positioned at described par surrounding, the par of described first electrode and lobe reflection are described organic
The light that luminescent layer sends, lobe can to described organic luminous layer side to light reflect, which thereby enhanced
The luminous efficiency of machine ray structure.
Foregoing description is only the description to present pre-ferred embodiments, not any restriction to the scope of the invention, this
Any change that the those of ordinary skill in bright field does according to the disclosure above content, modification, belong to the protection of claims
Scope.
Claims (10)
1. an organic light-emitting structure, including Semiconductor substrate, be sequentially located at the planarization layer in described Semiconductor substrate, first
Electrode, pixel confining layers, organic luminous layer and the second electrode, it is characterised in that described first electrode includes par and position
Reflect what described organic luminous layer sent in the lobe of described par surrounding, the par of described first electrode and lobe
Light.
2. organic light-emitting structure as claimed in claim 1, it is characterised in that also include insulating barrier, be positioned at described planarization layer
On, form acute angle, the flat part of described first electrode between side and the described planarization layer upper surface of described insulating barrier
On described planarization layer, the boss of described first electrode is on the side of described insulating barrier.
3. organic light-emitting structure as claimed in claim 2, it is characterised in that the described pixel confining layers described insulating barrier of encirclement,
The lobe of described first electrode and the par of described first electrode of part.
4. organic light-emitting structure as claimed in claim 3, it is characterised in that the side of described pixel confining layers and described first
Forming acute angle between the par upper surface of electrode, the structure of described pixel confining layers is identical with the structure of described insulating barrier.
5. organic light-emitting structure as claimed in claim 4, it is characterised in that described organic luminous layer includes par and is positioned at
The lobe of described par surrounding, the flat part of described organic luminous layer on the par of described first electrode, institute
State the boss of organic luminous layer on the side of described pixel confining layers.
6. organic light-emitting structure as claimed in claim 5, it is characterised in that organic luminous layer described in described second electrodes surrounding
And described pixel confining layers.
7. the organic light-emitting structure as according to any one of claim 2～6, it is characterised in that the material of described insulating barrier is
Organic gel.
8. the manufacture method of an organic light-emitting structure, it is characterised in that including: semi-conductive substrate is provided, partly leads described
Planarization layer, the first electrode, pixel confining layers, organic luminous layer and the second electrode, wherein, described first is sequentially formed on body
Electrode includes par and is positioned at the lobe of described par surrounding.
9. the manufacture method of organic light-emitting structure as claimed in claim 8, it is characterised in that shape on the semiconductor substrate
After becoming planarization layer, also include: on described planarization layer, form insulating barrier, and described insulating barrier is patterned, figure
Acute angle is formed between side and the described planarization layer of the insulating barrier of shape.
10. the manufacture method of organic light-emitting structure as claimed in claim 9, it is characterised in that in described planarization layer and institute
Stating and form the first electrode on insulating barrier, the par of described first electrode is formed on described planarization layer, described first electricity
The lobe of pole is formed on the side of described insulating barrier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610817917.XA CN106129100A (en) | 2016-09-12 | 2016-09-12 | Organic light-emitting structure and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610817917.XA CN106129100A (en) | 2016-09-12 | 2016-09-12 | Organic light-emitting structure and manufacture method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106129100A true CN106129100A (en) | 2016-11-16 |
Family
ID=57271643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610817917.XA Pending CN106129100A (en) | 2016-09-12 | 2016-09-12 | Organic light-emitting structure and manufacture method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106129100A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783928A (en) * | 2016-12-28 | 2017-05-31 | 信利（惠州）智能显示有限公司 | Oganic light-emitting display device |
| CN108281470A (en) * | 2018-01-29 | 2018-07-13 | 上海天马有机发光显示技术有限公司 | A kind of array substrate, electroluminescence display panel and display device |
| CN108346685A (en) * | 2018-02-12 | 2018-07-31 | 京东方科技集团股份有限公司 | A kind of array substrate and preparation method thereof, display device |
| CN110797473A (en) * | 2019-11-12 | 2020-02-14 | 京东方科技集团股份有限公司 | Display substrate, preparation method of display substrate and display panel |
| CN112599697A (en) * | 2020-12-10 | 2021-04-02 | 武汉华星光电半导体显示技术有限公司 | Display panel, manufacturing method thereof and electronic equipment |
| WO2022160400A1 (en) * | 2021-01-27 | 2022-08-04 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101834279A (en) * | 2010-04-30 | 2010-09-15 | 友达光电股份有限公司 | Area light source and display panel |
| US20130187163A1 (en) * | 2012-01-19 | 2013-07-25 | II-Nam Kim | Organic light emitting device and manufacturing method thereof |
| CN104362257A (en) * | 2014-10-22 | 2015-02-18 | 京东方科技集团股份有限公司 | Top-emitting OLED (organic light-emitting diode) device and manufacturing method thereof and display equipment |
-
2016
- 2016-09-12 CN CN201610817917.XA patent/CN106129100A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101834279A (en) * | 2010-04-30 | 2010-09-15 | 友达光电股份有限公司 | Area light source and display panel |
| US20130187163A1 (en) * | 2012-01-19 | 2013-07-25 | II-Nam Kim | Organic light emitting device and manufacturing method thereof |
| CN104362257A (en) * | 2014-10-22 | 2015-02-18 | 京东方科技集团股份有限公司 | Top-emitting OLED (organic light-emitting diode) device and manufacturing method thereof and display equipment |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783928A (en) * | 2016-12-28 | 2017-05-31 | 信利（惠州）智能显示有限公司 | Oganic light-emitting display device |
| CN106783928B (en) * | 2016-12-28 | 2019-09-17 | 信利（惠州）智能显示有限公司 | Oganic light-emitting display device |
| CN108281470A (en) * | 2018-01-29 | 2018-07-13 | 上海天马有机发光显示技术有限公司 | A kind of array substrate, electroluminescence display panel and display device |
| CN108346685A (en) * | 2018-02-12 | 2018-07-31 | 京东方科技集团股份有限公司 | A kind of array substrate and preparation method thereof, display device |
| CN108346685B (en) * | 2018-02-12 | 2021-01-26 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display device |
| CN110797473A (en) * | 2019-11-12 | 2020-02-14 | 京东方科技集团股份有限公司 | Display substrate, preparation method of display substrate and display panel |
| CN110797473B (en) * | 2019-11-12 | 2022-10-28 | 京东方科技集团股份有限公司 | Display substrate, preparation method of display substrate and display panel |
| CN112599697A (en) * | 2020-12-10 | 2021-04-02 | 武汉华星光电半导体显示技术有限公司 | Display panel, manufacturing method thereof and electronic equipment |
| WO2022160400A1 (en) * | 2021-01-27 | 2022-08-04 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106129100A (en) | Organic light-emitting structure and manufacture method thereof | |
| JP6751562B2 (en) | LED with growth substrate molded for lateral radiation | |
| US9786826B2 (en) | LED light-emitting element | |
| US9391246B2 (en) | LED mixing chamber with reflective walls formed in slots | |
| TWI506813B (en) | Single crystal dual light source light emitting element | |
| JP2014222771A (en) | Light emitting element package and manufacturing method of the same | |
| US20150055671A1 (en) | Photonic devices with embedded hole injection layer to improve efficiency and droop rate | |
| CN109873089A (en) | LED display panel and its manufacturing method | |
| CN102332520A (en) | Luminescent device | |
| CN102130256A (en) | Light emitting diode and manufacturing method thereof | |
| CN204088355U (en) | A kind of light emitting diode construction | |
| US20190123242A1 (en) | Light emitting apparatus | |
| KR20160059706A (en) | Light emitting device package and lighting apparatus including the package | |
| CN102194936B (en) | Light emitting device, light emitting device package, and lighting system | |
| US7928461B2 (en) | Light-emitting diode | |
| US8174039B2 (en) | Light-emitting diode device with high luminescent efficiency | |
| JP5814968B2 (en) | Nitride semiconductor light emitting device | |
| CN110246931A (en) | A kind of Micro-LED chip, display screen and preparation method | |
| JP2014160742A (en) | Light-emitting device | |
| TWI479686B (en) | Light-emitting diode | |
| TWI578565B (en) | Light-emitting diodes | |
| CN100428503C (en) | Efficient luminous diode and its manufacturing method | |
| CN106605307B (en) | Light source | |
| TW201511332A (en) | Light-emitting diodes and fabrication methods thereof | |
| US9048351B2 (en) | LED die, method for manufacturing the LED die and automobile lamp having the LED die |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161116 |
|
| RJ01 | Rejection of invention patent application after publication |