CN106129067A - A kind of dot structure and preparation method thereof, array base palte, display device - Google Patents
A kind of dot structure and preparation method thereof, array base palte, display device Download PDFInfo
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- CN106129067A CN106129067A CN201610565681.5A CN201610565681A CN106129067A CN 106129067 A CN106129067 A CN 106129067A CN 201610565681 A CN201610565681 A CN 201610565681A CN 106129067 A CN106129067 A CN 106129067A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims abstract description 75
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000059 patterning Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 15
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
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- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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Abstract
The present invention relates to Display Technique field, disclose a kind of dot structure and preparation method thereof, array base palte, display device；Wherein, dot structure includes: substrate；It is positioned at the source-drain electrode on described substrate；The first insulating barrier being positioned on described source-drain electrode, described first insulating barrier is provided with the first through hole；The public electrode being positioned on described first insulating barrier and overlap joint electrode, described public electrode and described overlap joint electrode are not in contact with each other, and described overlap joint electrode is electrically connected with described source-drain electrode by described first through hole；Being positioned at the second insulating barrier on described public electrode and described overlap joint electrode, described second insulating barrier is provided with the second through hole；Being positioned at the pixel electrode on described second insulating barrier, described pixel electrode is electrically connected with described overlap joint electrode by described second through hole.It is not easy between the public electrode of above-mentioned dot structure and source-drain electrode and/or pixel electrode to produce contact short circuit, so, the yield of above-mentioned dot structure is higher.
Description
Technical field
The present invention relates to Display Technique field, particularly to a kind of dot structure and preparation method thereof, array base palte, display
Device.
Background technology
Low temperature polycrystalline silicon (LTPS) product has become the main product of available liquid crystal display floater, at present, conventional LTPS
In the dot structure of display floater, as it is shown in figure 1, include smooth between pixel electrode (P-ITO) layer and source-drain electrode (SD) layer
Layer (PLN) 30, public electrode (C-ITO) layer 40 and insulating barrier (PVX) 60 three-decker, pixel electrode 70 and source-drain electrode 20 it
Between realize connecting by the trepanning 50 in flatness layer 30, common electrode layer 40 and insulating barrier 60 three-decker；Above-mentioned pixel is tied
The advantage of structure is that preparation process is more convenient, but this dot structure there is also some defects, particularly as follows: due to flatness layer 30,
In trepanning 50 structure that common electrode layer 40 and insulating barrier 60 are formed, the aperture size of its each layer through hole varies in size, and each layer
Through hole easily produces skew (OL Shift) for successively formation, aperture center, therefore, is easy to produce C-in preparation process
The problem of ITO Yu SD or C-ITO Yu P-ITO short circuit, and then cause dot structure bad.
Summary of the invention
The invention provides a kind of dot structure and preparation method thereof, array base palte, display device, in order to improve pixel knot
The yield of structure.
For reaching above-mentioned purpose, the present invention provides techniques below scheme:
A kind of dot structure, including:
Substrate；
It is positioned at the source-drain electrode on described substrate；
The first insulating barrier being positioned on described source-drain electrode, described first insulating barrier is provided with the first through hole；
The public electrode being positioned on described first insulating barrier and overlap joint electrode, described public electrode and described overlap joint electrode are mutual
Do not contact, and described overlap joint electrode is electrically connected with described source-drain electrode by described first through hole；
Being positioned at the second insulating barrier on described public electrode and described overlap joint electrode, described second insulating barrier is provided with second and leads to
Hole；
Being positioned at the pixel electrode on described second insulating barrier, described pixel electrode is by described second through hole and described overlap joint
Electrode electrically connects.
In above-mentioned dot structure, the first through hole of the first insulating barrier can be passed through between source-drain electrode and pixel electrode, take
Second through hole of receiving electrode and the second insulating barrier realizes connecting；Further, firstly, since public electrode is non-with layer with overlap joint electrode
Contact is arranged, so, public electrode is easily detected by overlapping electrode and contacts with source-drain electrode generation；Secondly as the first through hole
All lead to overlap joint electrode with the second through hole, so, the first through hole and the second through hole also not easily lead to public electrode (CITO) with
Contact, in sum, the public electrode of above-mentioned dot structure and source-drain electrode is produced between source-drain electrode and/or pixel electrode
And/or be not easy between pixel electrode to produce contact short circuit, so, the yield of above-mentioned dot structure is higher.
Preferably, described overlap joint electrode includes the connecting portion being positioned at described first through hole and is positioned at described first insulating barrier
On clinch；Along the extension direction of described first insulating barrier, the size of described clinch is more than the size of described first through hole.
Preferably, along the extension direction of described first insulating barrier, the size of described clinch is more than described second through hole
Size.
Preferably, described second through hole overlaps with the axial line of described first through hole.
A kind of array base palte, including the dot structure described in any of the above-described technical scheme.
A kind of display device, including the array base palte described in technique scheme.
A kind of preparation method of dot structure, including:
Substrate is formed source-drain electrode layer, is formed the figure of source-drain electrode by patterning processes；
Source-drain electrode layer is formed the first insulating barrier, is formed the figure of the first insulating barrier by patterning processes, described
The figure of one insulating barrier includes the first through hole；
First insulating barrier is formed common electrode layer, forms public electrode and the figure of overlap joint electrode by patterning processes
Shape, wherein, described public electrode is not in contact with each other with described overlap joint electrode, and described overlap joint electrode is by described first through hole and institute
State source-drain electrode electrical connection；
Common electrode layer is formed the second insulating barrier, is formed the figure of the second insulating barrier by patterning processes, described
The figure of two insulating barriers includes the second through hole；
Form pixel electrode layer over the second dielectric, formed the figure of pixel electrode, described pixel by patterning processes
Electrode is electrically connected with described overlap joint electrode by described second through hole.
Preferably, described overlap joint electrode includes the connecting portion being positioned at described first through hole and is positioned at described first insulating barrier
On clinch；Along the extension direction of described first insulating barrier, the size of described clinch is more than the size of described first through hole.
Preferably, along the extension direction of described first insulating barrier, the size of described clinch is more than described second through hole
Size.
Preferably, described second through hole overlaps with the axial line of described first through hole.
Accompanying drawing explanation
Fig. 1 is the part tangent plane structural representation of a kind of dot structure in prior art；
The structural representation of a kind of dot structure that Fig. 2 provides for the embodiment of the present invention；
Fig. 3 is the part tangent plane structural representation along dotted line direction of the dot structure shown in Fig. 2；
The preparation method flow chart of a kind of dot structure that Fig. 4 provides for the embodiment of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Describe, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments wholely.Based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under not making creative work premise
Embodiment, broadly falls into the scope of protection of the invention.
Refer to Fig. 2 and Fig. 3.
As shown in Figures 2 and 3, a kind of dot structure that the embodiment of the present invention provides, including:
Substrate 1；
The source-drain electrode 2 being positioned on substrate 1；
The first insulating barrier 3 being positioned on source-drain electrode 2, this first insulating barrier 3 be provided with run through its thickness direction first lead to
Hole 31；
The public electrode 4 being positioned on the first insulating barrier 3 and overlap joint electrode 5, public electrode 4 and overlap joint electrode 5 are not in contact with each other,
Overlap joint electrode 5 is covered the first through hole 31 and is electrically connected with source-drain electrode 2 by the first through hole 31；
Being positioned at the second insulating barrier 6 on public electrode 4 and overlap joint electrode 5, this second insulating barrier 6 is provided with and runs through its thickness side
To the second through hole 61；
Being positioned at the pixel electrode 7 on the second insulating barrier 6, pixel electrode 7 covers the second through hole 61 and by the second through hole 61
Electrically connect with overlap joint electrode 5.
In above-mentioned dot structure, can be by the first through hole of the first insulating barrier 3 between source-drain electrode 2 and pixel electrode 7
31, the second through hole 61 of overlap joint electrode 5 and the second insulating barrier 6 realizes connecting；Further, firstly, since public electrode 4 and overlap joint
Electrode 5 is arranged with layer noncontact, so, public electrode 4 is easily detected by overlapping electrode 5 and contacts with source-drain electrode 2 generation；Its
Secondary, overlap joint electrode 5 is all led to due to the first through hole 31 and the second through hole 61, so, the first through hole 31 and the second through hole 61 are the most not
It is easily caused between public electrode (CITO) 4 with source-drain electrode 2 and/or pixel electrode 7 to produce and contacts, in sum, above-mentioned picture
It is not easy to produce contact short circuit between public electrode 4 and source-drain electrode 2 and/or the pixel electrode 7 of element structure, so, above-mentioned picture
The yield of element structure is higher.
Further, since above-mentioned first through hole 31 and the second through hole 61 be separate structure, it is each other to aperture size
Do not limit, so, the diameter of the first through hole 31 and the second through hole 61 can be more than the size of trepanning of the prior art, and then
The charge efficiency of pixel electrode can be promoted.
As shown in Figures 2 and 3, in a kind of specific embodiment, overlap joint electrode 5 can include being positioned at the first through hole 31
Connecting portion 51 and the clinch 52 being positioned on the first through hole 31, wherein, connecting portion 51 one end contacts with source-drain electrode 2, another
End contacts with clinch 52, and pixel electrode 7 can be contacted with clinch 52 by the second through hole 61, and then realizes and source
The electrical connection of drain electrode 2.
As shown in Figures 2 and 3, it is preferable that along the extension direction of the first insulating barrier 3, the size of clinch 52 is more than first
The size of through hole 31.
When the size of clinch 52 is more than the size of the first through hole 31, on the one hand, clinch 52 can be completely by first
Through hole 31 covers, and then can avoid producing between public electrode 4 and source-drain electrode 2 contact short circuit；On the other hand, it is ensured that
Pixel electrode 7 is relatively big with the contact area of overlap joint electrode 5, and then can promote the charge efficiency of pixel electrode 7 further, and
The electrical connection of pixel electrode 7 and overlap joint electrode 5 can be conducive to.
As shown in Figures 2 and 3, it is further preferred that along the extension direction of the first insulating barrier 3, the size of clinch 52 is big
Size in the second through hole 61.
In like manner, when the size of clinch 52 is more than the size of the second through hole 61, on the one hand, clinch 52 can completely by
The peristome of the second through hole 61 hides envelope, and then, can avoid producing between public electrode 4 and pixel electrode 7 contact short circuit；Another
Aspect, it is ensured that pixel electrode 7 is relatively big with the contact area of overlap joint electrode 5, and then can promote pixel electrode 7 further
Charge efficiency, and the electrical connection of pixel electrode 7 and overlap joint electrode 5 can be conducive to.
As shown in Figures 2 and 3, on the basis of above-described embodiment, in a kind of specific embodiment, the second insulating barrier 6
Second through hole 62 overlaps with the axial line o of the first through hole 31 of the first insulating barrier 3.
When the axial line o of the second through hole 63 with the first through hole 31 overlaps, pixel electrode 7 and source-drain electrode 2 can be shortened
Coupling path, such that it is able to promote further the charge efficiency of pixel electrode 7.
As shown in Figure 2 to 4, the embodiment of the present invention additionally provides the preparation method of a kind of dot structure, this preparation method
Comprise the following steps:
Step S101, is formed source-drain electrode layer on substrate 1, is formed the figure of source-drain electrode 2 by patterning processes；
Step S102, forms the first insulating barrier on source-drain electrode layer, is formed the figure of the first insulating barrier 3 by patterning processes
Shape, the figure of this first insulating barrier 3 includes the first through hole 31；
Step S103, forms common electrode layer on the first insulating barrier 3, forms public electrode 4 by patterning processes and take
The figure of receiving electrode 5, wherein, public electrode 4 is not in contact with each other with overlap joint electrode 5, and overlap joint electrode 5 is by the first through hole 31 and source
Drain electrode 2 electrically connects；
Step S104, forms the second insulating barrier in common electrode layer, is formed the figure of the second insulating barrier 6 by patterning processes
Shape, the figure of this second insulating barrier 6 includes the second through hole 61；
Step S105, is formed pixel electrode layer on the second insulating barrier 6, is formed the figure of pixel electrode 7 by patterning processes
Shape, pixel electrode 7 is electrically connected with overlap joint electrode 5 by the second through hole 61.
By in the dot structure that above-mentioned preparation method is formed, first between source-drain electrode 2 and pixel electrode 7, can be passed through
Second through hole 61 of the first through hole 31 of insulating barrier 3, overlap joint electrode 5 and the second insulating barrier 6 realizes connecting；So, above-mentioned picture
It is not easy to produce contact short circuit between public electrode 4 and source-drain electrode 2 and/or the pixel electrode 7 of element structure, and then, above-mentioned picture
The yield of element structure is higher.
Further, since in the dot structure formed by above-mentioned preparation method, the first through hole 31 and the second through hole 61 are phase
The most independent structure, so the size of the first through hole 31 and the second through hole 61 can be more than the size of trepanning of the prior art,
And then the charge efficiency of pixel electrode 7 can be promoted；Further, owing to the first through hole 31 and the second through hole 61 are each other to aperture size
Do not limit with position, so, above-mentioned preparation process is relatively simple, be difficult to malfunction occur.
As shown in Figures 2 and 3, in a kind of specific embodiment, by, in the dot structure that above-mentioned preparation method is formed, taking
Receiving electrode 5 can include the connecting portion 51 being positioned at the first through hole 31 and the clinch 52 being positioned on the first through hole 31, wherein, even
Connect that one end, portion 51 contacts with source-drain electrode 2, the other end contacts with clinch 52, and pixel electrode 7 can lead to by second
Hole 61 contacts with clinch 52, and then realizes the electrical connection with source-drain electrode 2.
As shown in Figures 2 and 3, it is preferable that along the extension direction of the first insulating barrier 3, the size of clinch 52 is more than first
The size of through hole 31.
When the size of clinch 52 is more than the size of the first through hole 31, on the one hand, clinch 52 can be completely by first
Through hole 31 covers, and then can avoid producing between public electrode 4 and source-drain electrode 2 contact short circuit；On the other hand, it is ensured that
Pixel electrode 7 is relatively big with the contact area of overlap joint electrode 5, and then can promote the charge efficiency of pixel electrode 7 further, and
The electrical connection of pixel electrode 7 and overlap joint electrode 5 can be conducive to.
As shown in Figures 2 and 3, it is further preferred that along the extension direction of the first insulating barrier 3, the size of clinch 52 is big
Size in the second through hole 61.
In like manner, when the size of clinch 52 is more than the size of the second through hole 61, on the one hand, clinch 52 can completely by
The peristome of the second through hole 61 hides envelope, and then, can avoid producing between public electrode 4 and pixel electrode 7 contact short circuit；Another
Aspect, it is ensured that pixel electrode 7 is relatively big with the contact area of overlap joint electrode 5, and then can promote pixel electrode 7 further
Charge efficiency, and the electrical connection of pixel electrode 7 and overlap joint electrode 5 can be conducive to.
As shown in Figures 2 and 3, on the basis of above-described embodiment, in a kind of specific embodiment, by above-mentioned preparation side
In the dot structure that method is formed, the second through hole 62 of the second insulating barrier 6 and the axial line o of the first through hole 31 of the first insulating barrier 3
Overlap.
When the axial line o of the second through hole 63 with the first through hole 31 overlaps, pixel electrode 7 and source-drain electrode 2 can be shortened
Coupling path, such that it is able to promote further the charge efficiency of pixel electrode 7.
The embodiment of the present invention additionally provides a kind of array base palte, and this array base palte includes the pixel in any of the above-described embodiment
Structure.Owing to the dot structure in this array base palte is not easy to produce short circuit, and then, the yield of this array base palte is higher.
The embodiment of the present invention additionally provides a kind of display device, and this display device includes the array base in above-described embodiment
Plate.
It should be noted that in order to understand the annexation between signal source-drain electrode 2, clinch 52 and pixel electrode 7,
Accompanying drawing 2 is not drawn into the first insulating barrier 3 and structure of the second insulating barrier 6；
Obviously, those skilled in the art can carry out various change and modification without deviating from this to the embodiment of the present invention
Bright spirit and scope.So, if these amendments of the present invention and modification belong to the claims in the present invention and equivalent technologies thereof
Within the scope of, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. a dot structure, it is characterised in that including:
Substrate；
It is positioned at the source-drain electrode on described substrate；
The first insulating barrier being positioned on described source-drain electrode, described first insulating barrier is provided with the first through hole；
The public electrode being positioned on described first insulating barrier and overlap joint electrode, described public electrode and described overlap joint electrode do not connect
Touch, and described overlap joint electrode is electrically connected with described source-drain electrode by described first through hole；
Being positioned at the second insulating barrier on described public electrode and described overlap joint electrode, described second insulating barrier is provided with the second through hole；
Being positioned at the pixel electrode on described second insulating barrier, described pixel electrode is by described second through hole and described overlap joint electrode
Electrical connection.
Dot structure the most according to claim 1, it is characterised in that described overlap joint electrode includes being positioned at described first through hole
Interior connecting portion and the clinch being positioned on described first insulating barrier；Along the extension direction of described first insulating barrier, described overlap joint
The size in portion is more than the size of described first through hole.
Dot structure the most according to claim 2, it is characterised in that along the extension direction of described first insulating barrier, described
The size of clinch is more than the size of described second through hole.
4. according to the dot structure described in any one of claims 1 to 3, it is characterised in that described second through hole and described first
The axial line of through hole overlaps.
5. an array base palte, it is characterised in that include the dot structure described in any one of Claims 1 to 4.
6. a display device, it is characterised in that include the array base palte described in claim 5.
7. the preparation method of a dot structure, it is characterised in that including:
Substrate is formed source-drain electrode layer, is formed the figure of source-drain electrode by patterning processes；
Source-drain electrode layer is formed the first insulating barrier, is formed the figure of the first insulating barrier by patterning processes, described first exhausted
The figure of edge layer includes the first through hole；
First insulating barrier is formed common electrode layer, forms public electrode and the figure of overlap joint electrode by patterning processes, its
In, described public electrode is not in contact with each other with described overlap joint electrode, and described overlap joint electrode is by described first through hole and described source
Drain electrode electrically connects；
Common electrode layer is formed the second insulating barrier, is formed the figure of the second insulating barrier by patterning processes, described second exhausted
The figure of edge layer includes the second through hole；
Form pixel electrode layer over the second dielectric, formed the figure of pixel electrode, described pixel electrode by patterning processes
Electrically connected with described overlap joint electrode by described second through hole.
The preparation method of dot structure the most according to claim 7, it is characterised in that described overlap joint electrode includes being positioned at institute
State the connecting portion in the first through hole and the clinch being positioned on described first insulating barrier；Extension side along described first insulating barrier
To, the size of described clinch is more than the size of described first through hole.
The preparation method of dot structure the most according to claim 8, it is characterised in that along the extension of described first insulating barrier
Direction, the size of described clinch is more than the size of described second through hole.
10. according to the preparation method of the dot structure described in any one of claim 7～9, it is characterised in that described second through hole
Overlap with the axial line of described first through hole.
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| CN201610565681.5A CN106129067A (en) | 2016-07-18 | 2016-07-18 | A kind of dot structure and preparation method thereof, array base palte, display device |
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