CN106115718A - A kind of Disilicoethane process units - Google Patents

A kind of Disilicoethane process units Download PDF

Info

Publication number
CN106115718A
CN106115718A CN201610469253.2A CN201610469253A CN106115718A CN 106115718 A CN106115718 A CN 106115718A CN 201610469253 A CN201610469253 A CN 201610469253A CN 106115718 A CN106115718 A CN 106115718A
Authority
CN
China
Prior art keywords
disilicoethane
rectifying column
process units
reactor
slag
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610469253.2A
Other languages
Chinese (zh)
Other versions
CN106115718B (en
Inventor
黄晓东
谢嵩嶽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Xunding Semiconductor Material Technology Co Ltd
Original Assignee
Zhejiang Xunding Semiconductor Material Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang Xunding Semiconductor Material Technology Co Ltd filed Critical Zhejiang Xunding Semiconductor Material Technology Co Ltd
Priority to CN201610469253.2A priority Critical patent/CN106115718B/en
Publication of CN106115718A publication Critical patent/CN106115718A/en
Application granted granted Critical
Publication of CN106115718B publication Critical patent/CN106115718B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/04Hydrides of silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

The invention discloses a kind of Disilicoethane process units, including the high shearing-force type blade agitators installed in charging system, the storage tank of coupled reaction still, the outlet above reactor, the slag-drip opening bottom reactor, and reactor;Described charging system is built with magnesium silicide and ammonium chloride, described storage tank is built with liquefied ammonia, silane reaction mixture is discharged in described outlet, the silane reaction mixture that described outlet is discharged leads to rectifying column, the tower top of described rectifying column connects condenser, and connecting at the bottom of the tower of described rectifying column has reboiler, and the Disilicoethane that described rectifying column is discharged is connected with Disilicoethane storage tank, described slag-drip opening discharges reaction foreign material, and described slag-drip opening is 30 60 degree with the angle of horizontal plane.Owing to the process units of the present invention have selected optimization design, the especially design of the angle of slag-drip opening, saving the response time, production cost is relatively low, and equipment corrosion reduces, and can produce with continuous stabilization.

Description

A kind of Disilicoethane process units
Technical field
The invention belongs to technical field of chemical, relate to a kind of magnesium silicide and react the dress producing Disilicoethane with ammonium chloride Put, particularly relate to a kind of Disilicoethane process units.
Background technology
Disilicoethane is a kind of up-and-coming silicon fiml elder generation body, be in semi-conductor industry the most attractive special gas it One.Can be used as the good raw material of amorphous si film, photochemistry fibrous raw material and siloxanes etc., at quasiconductor, photoelectric material Have a wide range of applications in field and real value.Compared with monosilane, it has, and deposition velocity is fast, temperature requirement is low, The superioritys such as the film uniformity is high.But, the preparation method of existing Disilicoethane mainly because productivity is low, side-product is many, relative complex, no Being beneficial to operation causes production cost too high, which greatly limits its application.
At present, the synthetic method of Disilicoethane mainly has following several: (one), calcium-silicon enter with chlorine at 150 ~ 250 DEG C Row gas-solid reaction [Inorganic Syntheses, 1939,1:42-45];(2), Antaciron in the presence of ammonium chloride, Gas-solid reaction [Journal of fluorinechemistry, 1997,83 (1), 89-is carried out with chlorine at 110 ~ 200 DEG C 91] ;(3), silicon or silicon alloy carry out chlorination and prepare Disilicoethane, wherein containing SiCl in the product obtained4、Si2Cl6, with And Si3Cl8Above high boiling point component;Being processed by two sections of rudimentaryization, the by-product high boiling point component that i.e. (1) is initial, by adding Heat carries out rudimentaryization reaction treatment;(2) Si of remaining3Cl8Above high boiling point component, logical chlorine carries out rudimentaryization process [day This patent JP 59-20782];(4), under high temperature, cracking or hydro-reduction chlorosilane carry out the pasc reaction body of deposit polycrystalline silicon The waste gas [CN1392862A] of system's discharge;(5), chlorine and rudimentary silane (SiClX, x=0.2 ~ 0.8) and reaction so that low-grade silicon Alkane polymerization [WO2011067331].
The Disilicoethane productivity (10 ~ 20%) the most on the low side that above method prepares, is gas-solid reaction, and device is complicated and to equipment Requiring higher, be difficult to operation, simultaneous reactions temperature is the most higher, and energy consumption is big.These limit reaction the most to a certain extent Promote.Therefore, development is the simplest, productivity is higher synthesis technique and equipment make it industrially obtain larger range of pushing away Wide the most necessary, there is highly important practical significance.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, it is provided that a kind of Disilicoethane process units.
The present invention is achieved through the following technical solutions: a kind of Disilicoethane process units, including the charging system of coupled reaction still The high shearing-force type blade stirring installed in system, storage tank, the outlet above reactor, the slag-drip opening bottom reactor, and reactor Device;Described charging system is built with magnesium silicide and ammonium chloride, and described storage tank is built with liquefied ammonia, the silane reaction that described outlet is discharged Mixture leads to rectifying column, and the tower top of described rectifying column connects condenser, and connecting at the bottom of the tower of described rectifying column has reboiler, institute The Disilicoethane stating rectifying column discharge delivers to Disilicoethane storage tank, and described slag-drip opening discharges reaction foreign material, described slag-drip opening and horizontal plane Angle be 30-60 degree, preferably 40-50 degree.
Further, described reactor is provided with pressure-detecting device.
Further, described reactor is provided with temperature-detecting device.
Further, the volume of described reactor is 5-10 cubic meter.
Further, described rectifying column is the rectifying column of one group of series connection.
Further, the pipeline that described rectifying column is external is coated with heat-insulation layer.
Further, described condenser and reboiler are tubular heat exchanger.
The present invention compared with prior art has significant advantage and beneficial effect: owing to the present invention have selected optimization design Reactor, the especially design of the angle of slag-drip opening, save the response time, production cost is relatively low, equipment corrosion reduce, Can produce with continuous stabilization.
Accompanying drawing explanation
Fig. 1 is the structural representation of Disilicoethane process units of the present invention.
Wherein 1-charging system;2-storage tank;3-exports;4-slag-drip opening;5-height shearing-force type blade agitators;6-rectifying column; 7-condenser;8-reboiler;9-Disilicoethane storage tank.
Detailed description of the invention
For further appreciating that present disclosure, feature and effect, below in conjunction with drawings and Examples, detailed to the present invention Explanation.
Refering to Fig. 1, a kind of Disilicoethane reactor, including charging system 1, the storage tank 2 of coupled reaction still, above reactor The high shearing-force type blade agitators 5 installed in outlet 3, the slag-drip opening 4 bottom reactor, and reactor;In described charging system Equipped with magnesium silicide and ammonium chloride, described storage tank 2 is built with liquefied ammonia, and silane reaction mixture, described outlet 3 are discharged in described outlet 3 The silane reaction mixture discharged leads to rectifying column 6, and the tower top of described rectifying column connects condenser 7, the tower of described rectifying column The end connects reboiler 8, and the Disilicoethane that described rectifying column is discharged is connected with Disilicoethane storage tank 9, and it is miscellaneous that described slag-drip opening discharges reaction Thing, described slag-drip opening is 30-60 degree with the angle of horizontal plane.
For the ease of understanding the application, the existing silane product manufacturing process by use the application Disilicoethane process units is carried out Simple introduction.Described silane product manufacturing process comprises the steps of
A, first under 500-700 DEG C of environment, generate magnesium silicide with silica flour and magnesium powder,
Si+2Mg------→Mg2Si
B, react with ammonia chloride with magnesium silicide, in the environment of liquefied ammonia and catalyst, generate silanes and magnesium chloride hexammoniate, reaction Formula is:
NH3(l)
Mg2Si+NH4Cl----------------→SinHm+MgCl2•6NH3+H2
Catalyst
Wherein m=2n+2
C, magnesium chloride hexammoniate are a solids product, then obtain magnesium chloride and liquefied ammonia through separating reaction in addition, and liquefied ammonia can be thrown again Enter in above-mentioned processing procedure B and following processing procedure E and use:
MgCl2•6NH3----------→MgCl2+6NH3
D, magnesium chloride also generate magnesium powder and chlorine again through electrolysis, and magnesium powder is solid phase, can put in the A in above-mentioned processing procedure and make With:
MgCl2--------→Mg+Cl2
Electrolysis
E, chlorine generate ammonia chloride with liquefied ammonia synthetic reaction again, and ammonia chloride is put into the B in above-mentioned processing procedure and uses, wherein liquefied ammonia Coming from the C in above-mentioned processing procedure, in other words, the ammonia of processing procedure C generation can use for processing procedure B and E:
Cl2+H2-------→2HCl
NH3+HCl-------→NH4CL
Formula generates in step B the product of silanes from the reactions above, although monosilane and Disilicoethane are all gas, but molecule Amount is had nothing in common with each other, and causes the temperature required difference that liquefies/gasify.Use its physical characteristic different, can respectively obtain through separating Monosilane, Disilicoethane product, to allow the variant paraffinic product side of being individually present be answered different use demand.Specific works process As follows: reactor admixture of gas out enters the rectification tower system of series connection, control the greenhouse cooling in rectifying tower to-1200C to-1700C, isolates Disilicoethane: cool to-170 the most again0C to-1960C, isolates monosilane.The first that will obtain Silane is warming up to-1700More than C, makes monosilane become gas phase from liquid phase, lowers the temperature, in-1800C to-1960C temperature In obtain high-purity monosilane;The Disilicoethane obtained is warming up to-1200More than C, makes Disilicoethane become gas phase from liquid phase, so After lower the temperature again, in-130 0C to-1600C temperature obtains high-purity Disilicoethane, high-purity Disilicoethane is sent into Disilicoethane storage Tank, after measured, Disilicoethane purity is up to 99.998%.
For making monosilane, Disilicoethane high precision purification, it is possible to use molecular sieve gives purification.Certainly, higher for obtaining The purpose of precision purification, temperature difference, molecular sieve are possible not only to be used alone, and can also the two be applied in combination.Other equivalences Purification process can be used.
Embodiment 1
Above-mentioned Disilicoethane process units, including charging system 1, the storage tank 2 of coupled reaction still, the outlet 3 above reactor, instead The high shearing-force type blade agitators 5 installed in answering the slag-drip opening 4 in bottom portion, and reactor;Described charging system is built with silication Magnesium and ammonium chloride, described storage tank 2 is built with liquefied ammonia, and silane reaction mixture is discharged in described outlet 3, the silicon that described outlet 3 is discharged Alkane reactant mixture leads to rectifying column 6, and the tower top of described rectifying column connects condenser 7, and connecting at the bottom of the tower of described rectifying column has Reboiler 8, the Disilicoethane that described rectifying column is discharged is connected with Disilicoethane storage tank 9, and described slag-drip opening discharges reaction foreign material, described row Cinder notch is 30 degree with the angle of horizontal plane.
Embodiment 2
Repeating embodiment 1, difference is, described rectifying column is the rectifying column of 2 series connection, described slag-drip opening and horizontal plane Angle is 60 degree.
Embodiment 3
Repeating embodiment 1, difference is, described rectifying column is the rectifying column of 3 series connection, described slag-drip opening and horizontal plane Angle is 40 degree.
Embodiment 4
Repeating embodiment 1, difference is, described rectifying column is the rectifying column of 4 series connection, the pipeline that described rectifying column is external Being coated with heat-insulation layer, described slag-drip opening is 50 degree with the angle of horizontal plane.
Embodiment 5
Repeat embodiment 1, further feature be the volume of reactor be 5 cubic metres.
Embodiment 6
Repeat embodiment 1, further feature be the volume of reactor be 10 cubic metres, described condenser and reboiler are row Pipe heat exchanger.
Embodiment 7
Repeat embodiment 3, further feature be the volume of reactor be 5 cubic metres.
Embodiment 8
Repeat embodiment 4, further feature be the volume of reactor be 10 cubic metres.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art Member without departing from the scope of the present invention can in addition some changes, therefore the structure shown in described above comprised and accompanying drawing should It is considered as exemplary, and is not used to limit the protection domain of patent of the present invention.

Claims (8)

1. a Disilicoethane process units, it is characterised in that include the charging system of coupled reaction still, storage tank, above reactor Outlet, the slag-drip opening bottom reactor, and reactor in install high shearing-force type blade agitators;Described charging system is built-in Having magnesium silicide and ammonium chloride, described storage tank is built with liquefied ammonia, and silane reaction mixture is discharged in described outlet, and described outlet is discharged Silane reaction mixture leads to rectifying column, and the tower top of described rectifying column connects condenser, and connecting at the bottom of the tower of described rectifying column has Reboiler, the Disilicoethane that described rectifying column is discharged delivers to Disilicoethane storage tank, described slag-drip opening discharge reaction foreign material, described slag-drip opening It is 30-60 degree with the angle of horizontal plane.
Disilicoethane process units the most according to claim 1, it is characterised in that described slag-drip opening with the angle of horizontal plane is 40-50 degree.
Disilicoethane process units the most according to claim 1, it is characterised in that described reactor is provided with pressure detecting dress Put.
Disilicoethane process units the most according to claim 1, it is characterised in that described reactor is provided with temperature detection dress Put.
Disilicoethane process units the most according to claim 1, it is characterised in that the volume of described reactor is 5-10 cube Rice.
Disilicoethane process units the most according to claim 1, it is characterised in that described rectifying column is the rectification of one group of series connection Tower.
Disilicoethane process units the most according to claim 1, it is characterised in that the external pipeline of described rectifying column is coated with Heat-insulation layer.
Disilicoethane process units the most according to claim 1, it is characterised in that described condenser and reboiler are tubulation Formula heat exchanger.
CN201610469253.2A 2016-06-25 2016-06-25 A kind of disilane process units Active CN106115718B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610469253.2A CN106115718B (en) 2016-06-25 2016-06-25 A kind of disilane process units

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610469253.2A CN106115718B (en) 2016-06-25 2016-06-25 A kind of disilane process units

Publications (2)

Publication Number Publication Date
CN106115718A true CN106115718A (en) 2016-11-16
CN106115718B CN106115718B (en) 2017-11-21

Family

ID=57268310

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610469253.2A Active CN106115718B (en) 2016-06-25 2016-06-25 A kind of disilane process units

Country Status (1)

Country Link
CN (1) CN106115718B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108950208A (en) * 2018-06-04 2018-12-07 山东习尚喜新材料科技股份有限公司 A kind of continuous production device and technique of metallic potassium
CN109897058A (en) * 2019-02-28 2019-06-18 天津大学 A kind of organic silicon slurry slag processing system and treatment process

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5526150B2 (en) * 1975-12-29 1980-07-11
JPS58156522A (en) * 1982-03-11 1983-09-17 Mitsui Toatsu Chem Inc Preparation of disilane
CN102502653A (en) * 2011-12-14 2012-06-20 浙江赛林硅业有限公司 System and method for producing high-purity disilane
CN202415172U (en) * 2011-12-19 2012-09-05 天津市泰源工业气体有限公司 Device for producing disilane by reaction of magnesium silicide and ammonium chloride
CN102936014A (en) * 2012-10-22 2013-02-20 贺孝鸣 Method and device for producing disilane through reaction of alloyed composition and ammonium chloride in liquid ammonia
CN205115061U (en) * 2015-10-20 2016-03-30 南京亚格泰新能源材料有限公司 Low -temperature disilane rectification device
CN205709892U (en) * 2016-06-25 2016-11-23 浙江迅鼎半导体材料科技有限公司 A kind of Disilicoethane process units

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5526150B2 (en) * 1975-12-29 1980-07-11
JPS58156522A (en) * 1982-03-11 1983-09-17 Mitsui Toatsu Chem Inc Preparation of disilane
CN102502653A (en) * 2011-12-14 2012-06-20 浙江赛林硅业有限公司 System and method for producing high-purity disilane
CN202415172U (en) * 2011-12-19 2012-09-05 天津市泰源工业气体有限公司 Device for producing disilane by reaction of magnesium silicide and ammonium chloride
CN102936014A (en) * 2012-10-22 2013-02-20 贺孝鸣 Method and device for producing disilane through reaction of alloyed composition and ammonium chloride in liquid ammonia
CN205115061U (en) * 2015-10-20 2016-03-30 南京亚格泰新能源材料有限公司 Low -temperature disilane rectification device
CN205709892U (en) * 2016-06-25 2016-11-23 浙江迅鼎半导体材料科技有限公司 A kind of Disilicoethane process units

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108950208A (en) * 2018-06-04 2018-12-07 山东习尚喜新材料科技股份有限公司 A kind of continuous production device and technique of metallic potassium
CN108950208B (en) * 2018-06-04 2023-09-29 山东习尚喜新材料科技股份有限公司 Continuous production device and process of metal potassium
CN109897058A (en) * 2019-02-28 2019-06-18 天津大学 A kind of organic silicon slurry slag processing system and treatment process

Also Published As

Publication number Publication date
CN106115718B (en) 2017-11-21

Similar Documents

Publication Publication Date Title
CN101107197B (en) Method for producing trichlorosilane by thermal hydration of tetrachlorosilane
CN206033261U (en) Disilane apparatus for producing
CN102046529B (en) Method and system for the production of pure silicon
CN101254921B (en) Method for preparing trichlorosilane and polycrystalline silicon by transforming silicon tetrachloride
CN101618874B (en) Method for producing trichlorosilane by coldly hydrogenating silicon tetrachloride
CN106927468A (en) A kind of device for preparing electron level trichlorosilane
CN205709892U (en) A kind of Disilicoethane process units
CN102502646B (en) Equipment and method for preparing polysilicon by fast circulating fluidized bed-based chemical vapor deposition
CN106115718A (en) A kind of Disilicoethane process units
JP2010235439A (en) Apparatus and method for producing trichlorosilane
CN101531367B (en) Process for producing silicane
CN105800616B (en) Method for preparing disilane
CN102530951B (en) Produce method and the device of granular polycrystalline silicon
CN102674358A (en) Method and system for producing polysilicon
CN106185949A (en) A kind of manufacture method of Disilicoethane
CN202072477U (en) Polycrystalline silicon production system
CN104556054B (en) The recoverying and utilizing method and device of light component in trichlorosilane synthesis material
CN102815702A (en) Device and process of producing high-purity granular polycrystalline silicon by silanizing fluidized bed
CN106145119B (en) A kind of disilane reactor
CN202246098U (en) Trichlorosilane synthesizing equipment
CN102259868A (en) Wet dust removal process for trichlorosilane synthesis gas in production of polycrystalline silicon
CN104891499A (en) Technological method for preparing polysilicon by silane method
CN102196995A (en) Process for production of trichlorosilane and method for use thereof
CN214299303U (en) System for producing multi-size polycrystalline silicon and various silicon-based gases simultaneously
CN202099066U (en) Device for preparing silicane

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant