CN106098941A - There is micro-nano pore structure organic field effect tube sensor and making thereof and application - Google Patents
There is micro-nano pore structure organic field effect tube sensor and making thereof and application Download PDFInfo
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- CN106098941A CN106098941A CN201610435255.XA CN201610435255A CN106098941A CN 106098941 A CN106098941 A CN 106098941A CN 201610435255 A CN201610435255 A CN 201610435255A CN 106098941 A CN106098941 A CN 106098941A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
Abstract
The present invention relates to that there is micro-nano pore structure organic field effect tube sensor and making thereof and application, sensor includes substrate layer, evaporation is at substrate layer upper surface, with the aphthothiophenes ketone layer of micro-nano pore structure as organic semiconductor layer, it is deposited with the gold thin film at organic semiconductor layer upper surface and may be used for the detection of gas or powder body as source electrode and drain electrode, the sensor that making obtains.Compared with prior art, the present invention is substantially improved sensing capabilities and sensitivity, uses more convenient.
Description
Technical field
The present invention relates to a kind of organic field effect tube sensor, especially relating to one, to have micro-nano pore structure organic
Field effect transistor sensing device and making thereof and application.
Background technology
Organic field effect tube (OFET) is the transistor device using organic semiconducting materials as semiconductor layer.Based on
Organic field effect tube and the sensor performance made is superior, be widely used.The usual structure of traditional sensor is complicated, manufactures
Higher with the cost used, especially some highly sensitive sensor measuring equipment volume are big, operation complexity, are difficult to make low
The sensor of cost portable.Field-effect transistor is the active device utilizing electric field to control solid material electric conductivity, its
There is the many advantages such as volume is little, lightweight.But, field effect transistor based on inorganic oxide or ceramic-like often requires that
The highest operating temperature, or detection selectivity is the highest, uses inconvenience in many occasions, and visits based on organic semi-conductor
Survey sensor and can inherit that the preparation cost of organic electronic device is low, the lightest and the advantage such as flexible, can overcome the disadvantages that big
The deficiency of type detecting instrument, can become effectively supplementing existing chemical detection device.And as organic molecule, You Jiban
Conductor molecule possesses almost limitless modifiability, can add diversified side chain functionalities by the method for chemosynthesis.
While retaining its electric property so that organic semiconductor possesses certain chemical characteristic, possesses specific chemical substance
Higher sensitivity.It is based on this 2 point so that in recent years, organic field effect tube sensor is by research worker
Pay attention to, as Bao Zhenan team of Stanford Univ USA reports a kind of based on the polydimethylsiloxane with complex micro structure
(PDMS) OFET of dielectric layer, this OFET have the highest pressure-sensitivity characteristic.K.See,J.Huang,.Becknell,and
DMMP (simulation Schain poison gas) prepared by H.Katz detects device, can be only the DMMP of 100mg/m3 and the mixed of air in concentration
Close in gas and detect DMMP gas.
But organic field effect tube sensor is the highest to the response sensitivity of target analytes at present, responds and replys
For up to a few minutes even dozens of minutes, significantly limit its concrete application in daily life problem.Trace it to its cause,
The device architecture of tradition OTFT constrains sensitivity and the response speed of chemical sensor: target gas molecules needs first to exist
Spread over long distances in organic semiconductor thin-film, could occur to interact with the conducting channel being positioned at bottom semiconductor layer
Change device output signal.Therefore new OTFT device architecture is prepared in design is the main path solving the problems referred to above.Nanometer is many
Pore structure has the highest specific surface area, gas molecule rapid, high volume can be allowed to pass through, be highly suitable as OFET gas sensing
The device architecture of device, solves that sensor detectivity is low and response time long the two bottleneck problem.But, You Jiban
Conductor material is little molecule or macromolecular material, and fusing point is low, and crystal formation is unstable, is easily soluble in various reagent, and these factors are led
Cause the preparation organic semiconductor containing micro-nano pore structure abnormal difficult.Although utilizing template to prepare, but removing template is gone to have again
The biggest problem, therefore the research for organic semi-conductor micro-nano pore structure is few.Hsiao-Wen Zan once reported with glass
Glass is substrate, and using polystyrene (PS) ball is template, is then deposited with quasiconductor (Benzo[b) so that it is form incomplete continuous print
Pentacene thin film.But, the mechanism material to be detected of this device work and the hydroxyl effect in insulating barrier PVP, do not have
Universality, and do not remove PS ball, the existence of PS ball can weaken the detection performance of sensor significantly.Therefore, a kind of mould of development
The preparation method that plate is easily removed, thus prepare and there is the OFET sensor of micro-nano pore structure have the biggest necessity.
Chinese patent CN104849336A discloses organic field effect tube gas sensor and preparation method thereof, belongs to
Technical field of electronic components, solves can not accurately to control in prior art the size of crystal grain in organic material, can not realize
The problem of the room temperature detection of field effect transistors gas sensor.Its structure includes substrate, the grid set gradually from top to bottom
Electrode, gate insulator, organic semiconductor layer, the source electrode arranged on organic semiconductor layer and drain electrode, organic semiconductor
Layer is solubility, and the Lac in organic semiconductor layer addition 5%～15% mixes.In this patent solution prior art not
Can accurately control the size of crystal grain in organic material, the room temperature detection of organic field effect tube gas sensor can not be realized
Problem, but it is low not solve transistor sensor sensitivity, the problem of response time length.The application is then intended to provide one
The method of kind, prepares the semi-conducting material containing micro-nano pore structure conveniently and efficiently so that it is is applied to organic field effect tube and passes
In sensor, thus it is substantially improved the performance of sensor, improves sensitivity, shorten response time.Meanwhile, the sensor prepared depends on
The old problem that can realize room temperature detection, and be mainly used under room temperature condition, therefore there is obvious superiority.
Summary of the invention
Defect that the purpose of the present invention is contemplated to overcome above-mentioned prior art to exist and provide one not improve organic field
On the basis of the cost of manufacture of effect transistor sensor, it is substantially improved sensing capabilities and sensitivity.
Another object of the present invention aims to provide a kind of method, prepares partly leading containing micro-nano pore structure conveniently and efficiently
Body material so that it is being applied in organic field effect tube sensor, sensing capabilities is substantially improved, more convenient, sensitive
Du Genggao.
Third object of the present invention is to realize the double check to gas and powder body simultaneously.
The purpose of the present invention can be achieved through the following technical solutions:
There is micro-nano pore structure organic field effect tube sensor, including:
Substrate layer,
It is deposited with at substrate layer upper surface, with the aphthothiophenes ketone layer of micro-nano pore structure as organic semiconductor layer,
It is deposited with in the gold thin film of organic semiconductor layer upper surface as source electrode and drain electrode.
Described substrate layer is grid and covers the silicon chip in gate upper surface.
The upper surface of described silicon chip is also 200-400nm silicon dioxide layer with thickness.
There is the manufacture method of micro-nano pore structure organic field effect tube sensor, employing following steps:
A) cleaning of substrate processes: use acetone, isopropanol ultrasonic cleaning silicon chip successively, then with ethanol and deionized water
Rinse, finally dry up silicon chip surface with nitrogen；
B) hydrophilic treated of substrate surface: using plasma surface treatment instrument to process silicon chip, energy is high-grade, the time
For 5min；
C) configuration PS ball dissolves dispersion liquid: dilution PS ball dispersion liquid concentration, to 1.5-2.0wt, is then then sonicated and makes PS
Ball disperses；
D) the PS ball dispersion liquid handled well is instiled on silicon chip, then carry out frozen dried；
E) organic semiconductor layer it is deposited with on the silicon chip after frozen dried: use vacuum evaporation instrument to carry out heat evaporation, at lining
Forming p-type organic semiconductor layer, thickness is 20-40nm at the end；
F) PS ball template is removed: fixing silicon chip utilizes adhesive tape to be bonded at the surface of organic semiconductor thin-film layer gently, so
After open, remove PS ball, it can also be ensured that organic semiconductor layer is not destroyed；
G) vapor deposition source drain electrode: the Au thin film conduct of the evaporation mutually 50-100nm thickness of isolation after using mask plate to block
Source electrode and drain electrode, the long 6mm of electrode, wide 0.2mm, electrode spacing 0.4mm.
The particle diameter of described PS ball is 0.5-10 μm
Described PS ball template is that the method utilizing lyophilizing prepares.Scattered PS ball homogeneous dispersion is instiled
On silicon chip ,-30 DEG C of pre-freezes 3 hours, then evacuation (below 1Pa) carries out lyophilizing 12 hours at-50 DEG C, obtains on silicon chip
The PS ball template being evenly distributed and do not reunite；
Have micro-nano pore structure organic field effect tube sensor can application in gas detecting, with nitrogen for the back of the body
Prosperous body, the sensor using this technology to prepare detects the content of wherein ammonia.Device is put into the airtight cavity that volume is 6L
In, by compact simplified probe station, by itself and its electrology characteristic of K-4200 connecting test.The most at ambient temperature, adapter
After part, to airtight cavity is full of nitrogen, the electric property of test device；After its current stabilization, inject a certain amount of ammonia
Gas so that be full of ammonia level be 1/1000000th (ammonia and the volume ratio of nitrogen, namely ammonia level is in airtight cavity
Gaseous mixture 1ppm), this sensor can detect the ammonia of 1ppm concentration, when sensor is in the ammonia of 1ppm concentration,
When grid voltage is-50V, its current changing rate reaches 50%, than the sensor without micro-nano pore structure highly sensitive a lot.This
The detectable limit of sensor is 0.5ppm, much larger than existing OFET sensor.Meanwhile, this sensor has and well can reply
Property, can be with Reusability.
Having micro-nano pore structure organic field effect tube sensor can be in the application during powder body material detects, with trimerization
As a example by cyanamide and dinitrotoluene (DNT), the sensor using this technology to prepare can separate different powder body with detection zone.Device is put into
Volume is in the airtight cavity of 6L, by compact simplified probe station, by itself and its electrology characteristic of K-4200 connecting test.Adapter
After part, test the electric property of device in atmosphere；After its current stabilization, powder body material is sprinkling upon device surface.Work as trimerization
It is that the electric current of sensor reduces rapidly on the surface of sensor that cyanamide covers, and the rate of change of common crystal tube sensor is about
30%, and the responsiveness with the OFET sensor of micro-nano pore structure is 60%；And when dinitrotoluene (DNT) powder body covers in sensing
During device surface, the electric current of sensor is to increase, and the rate of change of common crystal tube sensor is about 30%, and has micro-nano hole knot
The responsiveness of the OFET sensor of structure is 60%.Therefore, relatively common transistor sensor, this have micro-nano pore structure
Transistor sensor substantially increases the sensitivity of detection.
Compared with prior art, the invention have the advantages that
1, the organic field effect tube sensor with micro-nano pore structure of preparation, is to realize first preparing containing micro-nano
The organic semiconductor layer of pore structure；
2, the organic field effect tube sensor with micro-nano pore structure of preparation, it is achieved that highly sensitive gas is examined
Surveying, performance is greatly improved, more quick to outside conditioned response, and sensitiveer, reduces the detection time, improves detection effect
Rate.Because the device architecture of tradition OTFT constrains sensitivity and the response speed of chemical sensor: target gas molecules needs
First to spread over long distances in organic semiconductor thin-film, could occur mutually with the conducting channel being positioned at bottom semiconductor layer
Effect carrys out changer part output signal, and micro-nano porous structure has the highest specific surface area, and gas molecule can be allowed quick
Pass through in a large number, arrive and be positioned at the conducting channel bottom semiconductor layer such that it is able to be greatly improved the sensitivity of device；
3, the organic field effect tube sensor with micro-nano pore structure of preparation, it is achieved that highly sensitive powder body is examined
Surveying, this is that powder body harmful substance directly can be detected by organic field effect tube sensor first.Traditional organic field effect
Answering in transistor arrangement, semiconductor layer is lamellar structure, and powder body cannot spread in organic semiconductor thin-film over long distances, is difficult to
Interact with the conducting channel being positioned at bottom semiconductor layer, thus cannot be detected.But, there is micro-nano hole
In the organic field effect tube sensor of structure, micro-nano pore structure provides the passage of powder body large area diffusion, thus can be straight
Connect and be positioned at the conducting channel generation interaction bottom semiconductor layer to change output signal, i.e. realizing the detection of powder body；
4, this kind of organic field effect tube sensor preparation technology is simple, and low cost is easy to carry, compensate for large-scale inspection
Survey the deficiency of instrument.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the structural representation of the present invention；
Fig. 3 is the output characteristic curve of sensor；
Fig. 4 is the sensor response condition to ammonia；
Fig. 5 is the sensor response condition to powder body material.
In figure, 1-substrate layer, 11-grid, 12-silicon chip, 13-silicon dioxide layer, 2-organic semiconductor layer, 3-micro-nano hole,
4-gold thin film.
Detailed description of the invention
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.
Embodiment 1
Having micro-nano pore structure organic field effect tube sensor, its structure as shown in Figure 1-2, including substrate layer 1, is steamed
Being plated in substrate layer 1 upper surface, with the aphthothiophenes ketone layer of micro-nano hole 3 as organic semiconductor layer 2, evaporation is at organic semiconductor
The gold thin film 4 of layer 2 upper surface is as source electrode and drain electrode.Wherein, substrate layer 1 includes grid 11 and covers table on grid 11
The silicon chip 12 in face, it addition, the upper surface at silicon chip is also 200-400nm silicon dioxide layer 13 with thickness.
Organic semiconducting materials (dinaphtho thienone DNTT) synthesizes according to following steps:
(1) all of chemical reagent purity is analytical pure.Oxolane the most all pass through except water process, all instead
All should carry out under anhydrous and oxygen-free environment, use argon shield.The trimethyl ethylenediamine of 2.87mL (21mmol) is joined
In the oxolane of 35mL, mix with the hexane solution (concentration 1.59M, 13.2mL) of n-BuLi at subzero 30 DEG C.Same
At a temperature of sample, stirring mixed solution is after 15 minutes, is slowly added dropwise the tetrahydrofuran solution (2.0g of (adding for 5 minutes) 2-naphthaldehyde
2-naphthaldehyde joins in 10mL oxolane), add the n-BuLi normal hexane that 24.15mL concentration is 38.4mmol afterwards
Solution, at subzero 30 DEG C, stirring mixed liquor 3.5 hours.Add the Methyl disulfide (5.67mL, 64mmol) of excess and in room
After the lower stirring of temperature 2 hours, add 20mL hydrochloric acid (concentration is 1M).Final mixture uses 60mL dichloromethane after stirring 10 hours
Extract.Extract uses MgSO4 to be vacuum dried the most again.Use chromatographic column to purify solid residue, obtain Huang
Color solid solid 1a (1.49g), chromatographic solution is the mixed liquor (volume ratio is 9:1) of normal hexane and ethyl acetate.
(2) adding 0.39g zinc powder in 10mL oxolane, being slowly added to 0.66mL titanium tetrachloride, to be heated to reflux 1.5 little
Time.After solution drops to room temperature, it is slowly added to the tetrahydrofuran solution (0.405g 1a joins in 10ml oxolane) of 1a, mixed
Close liquid condensing to reflux 10 hours.After temperature drops to room temperature, with 30mL saturated sodium bicarbonate aqueous solution and 30mL dichloromethane to it
It is diluted, stirs 3.5 hours.Using kieselguhr to filter, filtrate is divided into organic layer and water layer.Use 60mL dichloromethane
Water layer is extracted, which floor will have use MgSO4 to be vacuum dried the most again.Clean through dichloromethane and run plate (silica gel plate)
Purify, obtain yellow crystals 2a (0.299g).
(3) 0.2235g 2a and 4.87g iodine are added sequentially in 15mL chloroform backflow 21 hours.Temperature drops to room temperature
After, add the saturated aqueous solution of sodium bisulfite of 20mL, filter out precipitation and use water and chloroform to be carried out.The thick product obtained
Thing is purified by vacuum sublimation and obtains yellow solid, is DNTT.
Embodiment 2
There is the preparation method of micro-nano pore structure organic field effect tube sensor, employing following steps:
The first step, uses acetone, isopropanol ultrasonic cleaning by substrate, re-uses deionized water afterwards and ethanol rushes
Wash, use nitrogen to dry up substrate 1 surface.
Second step, is diluted with water to 1.5-further by the PS dispersion liquid that the mass fraction being commercially available is 2.5wt%
2.0wt%, ultrasonic 30min is stand-by；
3rd step, is placed on the silicon substrate of wash clean in Cement Composite Treated by Plasma instrument and processes 10min with high-energy, then will
The PS dispersion liquid configured instils on a silicon substrate on a small quantity, is then placed in freeze dryer carrying out frozen dried so that PS ball is uniform
Paving is on a silicon substrate；
4th step, the silicon chip that surface is paved with PS ball puts into vacuum cavity, under the vacuum condition of 10-4Pa, uses true
The method of empty evaporation, is deposited with organic semiconductor DNTT on silicon chip, forms semiconductor layer.During evaporation, underlayer temperature is fitted
In be maintained at about 70 DEG C, the film thickness monitoring being finally deposited with is at 30nm.
5th step, takes out silicon chip, fixes silicon chip, and then using the method for adhesive tape sticky removing gently to take out particle diameter is 10 μm
PS ball.Because the thickness of DNTT is 30nm, being far smaller than the particle diameter of PS ball, therefore the method can not destroy the film of DNTT
Under the conditions of, remove simply and quickly PS ball, so that organic semiconductor layer has micro-nano pore structure.
6th step, by the way of mask, is deposited with on organic semiconductor formation electrode under a high vacuum by gold.Electrode is thick
Degree is about 80nm.
7th step, by the organic field effect tube of preparation, under room temperature, atmospheric environment, uses K-4200 quasiconductor to survey
Examination instrument and unrelated probe platform, driving voltage-60v 60v interscan, thus obtain the output characteristic curve of device.Fig. 3 is well
Illustrate the output characteristic curve of device.
Embodiment 3
Utilize preparation has micro-nano pore structure organic field effect tube sensor, tests its characteristic.By device
Part is put in the airtight cavity that volume is 6L, by compact simplified probe station, by itself and its electrology characteristic of K-4200 connecting test.
Method of testing, the most at ambient temperature, after interface unit, to airtight cavity is full of nitrogen, test device
Electric property；After its current stabilization, inject a certain amount of ammonia so that airtight cavity is full of ammonia level be million/
The gaseous mixture of one (ammonia and the volume ratio of nitrogen, namely ammonia level be 1ppm), now the electric current of device can be decreased obviously；It
After blast nitrogen and device carried out of short duration heating (being heated to 50 degrees Celsius, heat 5 minutes), until device cool down after, continue
Device carrying out test find, the electric current of device can return to again initial size.
Fig. 4 illustrates the device sensitivity to ammonia and the restorability of device well.Figure 4, it is seen that it is sharp
Obvious to the response of 1ppm ammonia with having micro-nano pore structure organic field effect tube sensor component, electric current reduces
47%, and common OFET sensor component electric current only reduces 16%.This explanation has micro-nano pore structure organic effect crystal
Tube sensor is higher to the sensitivity of gas detecting.Meanwhile, we are it can also be seen that have the OFET sensor of micro-nano pore structure
Response time shorter, react more rapid sensitive.
Embodiment 4
Utilize preparation has micro-nano pore structure organic field effect tube sensor as powder body chemical sensor, to it
Characteristic is tested.Device is put in the airtight cavity that volume is 6L, by compact simplified probe station, by it with K-4200 even
Connect its electrology characteristic of test.
Method of testing, after interface unit, tests the electric property of device in atmosphere；After its current stabilization, by powder body
Material is sprinkling upon device surface, and the change observing device electric property finds, melamine powder is known from experience makes device current reduce, and two
Methylnitrobenzene (DNT) then can make device current increase.
Fig. 5 well indicates the device response condition to different powder body materials, and in figure, the curve of numbering 1,2 is device pair
The response condition of DNT, wherein 2 is the response curve of common OFET sensor, and 1 is brilliant for having micro-nano pore structure organic effect
The response curve of body tube sensor；In figure, the curve of numbering 3,4 is the device response condition to tripolycyanamide, and wherein 3 is common
The response curve of OFET sensor, 4 is the response curve with micro-nano pore structure organic field effect tube sensor.Contrast can
To find, there is the sensitivity that powder body material detects by micro-nano pore structure organic field effect tube sensor higher.
Claims (8)
1. there is micro-nano pore structure organic field effect tube sensor, it is characterised in that including:
Substrate layer,
It is deposited with at substrate layer upper surface, with the aphthothiophenes ketone layer of micro-nano pore structure as organic semiconductor layer,
It is deposited with in the gold thin film of organic semiconductor layer upper surface as source electrode and drain electrode.
The most according to claim 1 have micro-nano pore structure organic field effect tube sensor, it is characterised in that described
Substrate layer be grid and cover at the silicon chip of gate upper surface.
The most according to claim 2 have micro-nano pore structure organic field effect tube sensor, it is characterised in that described
The upper surface of silicon chip be also 200-400nm silicon dioxide layer with thickness.
There is the manufacture method of micro-nano pore structure organic field effect tube sensor the most as claimed in claim 1, its feature
It is, the method employing following steps:
A) cleaning of substrate processes: use acetone, isopropanol ultrasonic cleaning silicon chip successively, then with ethanol and deionized water punching
Wash, finally dry up silicon chip surface with nitrogen；
B) hydrophilic treated of substrate surface: use plasma surface treatment instrument to process silicon chip；
C) configuration PS ball dissolves dispersion liquid: dilution PS ball dispersion liquid concentration, to 1.5-2.0wt, is then then sonicated and makes PS ball point
Dissipate；
D) the PS ball dispersion liquid handled well is instiled on silicon chip, then carry out frozen dried；
E) organic semiconductor layer it is deposited with on the silicon chip after frozen dried: use vacuum evaporation instrument to carry out heat evaporation, on substrate
Form p-type organic semiconductor layer；
F) PS ball template is removed: fixing silicon chip utilizes adhesive tape to be bonded at the surface of organic semiconductor thin-film layer gently, then takes off
Open, remove PS ball；
G) vapor deposition source drain electrode: after using mask plate to block, the Au thin film of the evaporation mutually 50-100nm thickness of isolation is as source electricity
Pole and drain electrode.
The manufacture method with micro-nano pore structure organic field effect tube sensor the most according to claim 4, it is special
Levying and be, the particle diameter of described PS ball is 0.5-10 μm.
The manufacture method with micro-nano pore structure organic field effect tube sensor the most according to claim 4, it is special
Levy and be, step d) utilizes the method for lyophilizing prepare PS ball template, scattered PS ball homogeneous dispersion is instiled at silicon chip
On ,-30 DEG C of pre-freezes 3 hours, then evacuation (below 1Pa) carries out lyophilizing 12 hours at-50 DEG C, obtains the PS ball on silicon chip
Template.
There is micro-nano pore structure organic field effect tube sensor answering in gas detecting the most as claimed in claim 1
With.
There is micro-nano pore structure organic field effect tube sensor the most as claimed in claim 1 in powder body material detects
Application.
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| CN110095522A (en) * | 2019-03-25 | 2019-08-06 | 同济大学 | Monitor the organic transistor chemical sensor and preparation method thereof of lithium battery electrolytes |
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| CN110849252A (en) * | 2019-11-14 | 2020-02-28 | 东北师范大学 | Large-area conformable organic semiconductor type proximity sensor and application thereof in detection of object with tiny charges |
| CN111103094A (en) * | 2019-12-11 | 2020-05-05 | 同济大学 | Ion conduction type metal-organic framework film chemical sensor and preparation method thereof |
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