CN106066347A - A kind of self assembly graphene field effect cast biochemical sensor based on SU 8 stressor layers - Google Patents

A kind of self assembly graphene field effect cast biochemical sensor based on SU 8 stressor layers Download PDF

Info

Publication number
CN106066347A
CN106066347A CN201610421190.3A CN201610421190A CN106066347A CN 106066347 A CN106066347 A CN 106066347A CN 201610421190 A CN201610421190 A CN 201610421190A CN 106066347 A CN106066347 A CN 106066347A
Authority
CN
China
Prior art keywords
graphene
layer
dielectric layer
electrode
biochemical sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610421190.3A
Other languages
Chinese (zh)
Inventor
邓涛
张兆浩
刘泽文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Jiaotong University
Original Assignee
Beijing Jiaotong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Jiaotong University filed Critical Beijing Jiaotong University
Priority to CN201610421190.3A priority Critical patent/CN106066347A/en
Publication of CN106066347A publication Critical patent/CN106066347A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125—Composition of the body, e.g. the composition of its sensitive layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

The present invention discloses a kind of self assembly graphene field effect cast biochemical sensor based on SU 8 stressor layers, including, monocrystalline substrate；Graphene layer；It is arranged on the dielectric layer on described graphene layer；A part is arranged in described monocrystalline substrate, and another part is arranged on drain electrode and source electrode on described graphene layer；A part is arranged in described monocrystalline substrate, and another part is arranged on the gate electrode on described dielectric layer；And, the drain electrode on described graphene layer and source electrode, the gate electrode on described dielectric layer and the stressor layers arranging on described graphene layer；Wherein, described graphene layer, the drain electrode on described graphene layer become curly with source electrode, described dielectric layer and the gate electrode on dielectric layer and described SU 8 stressor layers.

Description

A kind of self assembly graphene field effect cast biochemical sensor based on SU-8 stressor layers
Technical field
The present invention relates to biochemical sensor technologies field.More particularly, to a kind of self assembly based on SU-8 stressor layers Graphene field effect cast biochemical sensor.
Background technology
Biological and chemical sensor (biochemical sensor) is in chemical industry, pharmacy, biomedicine, environmental monitoring and food security etc. Numerous areas has extensive and important application, closely bound up with the productive life of people.High-performance biochemical sensor not only needs Have selectively good, highly sensitive, analyze that speed is fast, low cost and other advantages, in addition it is also necessary to have increasingly automated, miniaturization, Integrated and that continuous on-line monitoring can be carried out in complex system feature.
High performance sensor depends on high performance sensitive material, and Graphene is exactly in novel high-performance sensitive material One Typical Representative.As a kind of two dimensional crystal material, Graphene has excellent electricity, mechanics, calorifics and optical property.Stone Ink alkene biochemical sensor substantially can be divided into: electrochemical electrode, capacitor type, photoelectrical coupler (Raman and surface plasma) type and Field-effect cast.Wherein, graphene field effect pipe (Graphene field-effect transistor, GFET) type is biochemical passes Sensor is strong because of its simple in construction, highly sensitive and applicability, studies the most extensive.
The general principle of graphene field effect cast biochemical sensor is that detection Graphene electrical conductivity is with its surface electrical behavior Change.Graphene as conducting channel can form surface to the measured object in detection environment (liquid medium or gas medium) Absorption, if measured object charge particles, then can form physical doping to Graphene, change the band structure of Graphene.Graphene The change that can carry can be detected by detecting its electrical conductivity under certain grid voltage.Thus, suffered by graphenic surface Doping level (with measured object concentration one_to_one corresponding) can be detected.Up to now, it has been reported that Graphene field effect The typical structure answering cast biochemical sensor has two kinds, and one is back grid structure, and another kind is liquid grid structure.
The graphene field effect cast biochemical sensor of back grid structure usually relies on the dioxy that on silicon substrate, thermal oxide is formed SiClx layer (thickness～300nm) provide grid voltage as dielectric layer, to overcome what transfer Graphene was difficult to be accurately positioned to ask Topic.Because silicon dioxide dielectric layers is too thick, backgate capacitance is relatively low, so back gate voltage is to the control ability of Graphene conductance also More weak.This result in work grid voltage often as high as ± 50V, have been over human safety voltage, it is difficult to meet weak electric signal and The requirement of implanted detection, thus seriously limit the application of the graphene field effect cast biochemical sensor of back grid structure.Adopt Directly utilizing solution to be measured with the graphene field effect cast biochemical sensor of liquid grid structure provides grid electricity as dielectric layer Pressure.Due to the dielectric constant of the aqueous solution higher (relative dielectric constant about 80), therefore required grid voltage is relatively low.But, There are some researches show that the Electric Field Distribution that the internal equivalent capacity of solution to be measured causes is nonlinear, and analytical function Shi Laibiao can not be used Reach.Thus, the transfer characteristic of Graphene liquid gate field-effect transistor is extremely complex, and the output of its electric current is difficult to Accurate Analysis, causes The sensitivity of detection and precision need to be improved further.
Accordingly, it is desirable to provide a kind of self assembly graphene field effect cast biochemical sensor based on SU-8 stressor layers.
Content of the invention
It is an object of the invention to provide the biochemical biography of a kind of self assembly graphene field effect cast based on SU-8 stressor layers Sensor.
For reaching above-mentioned purpose, the present invention uses following technical proposals:
A kind of self assembly graphene field effect cast biochemical sensor based on SU-8 stressor layers, including,
Monocrystalline substrate 1；
Graphene layer 2；
It is arranged on the dielectric layer 4 on described graphene layer 2；
A part is arranged in described monocrystalline substrate 1, and another part is arranged on the drain electrode 3 on described graphene layer 2 With source electrode 6；
A part is arranged in described monocrystalline substrate 1, and another part is arranged on the gate electrode 5 on described dielectric layer 4；
And,
Drain electrode 3 on described graphene layer 2 and source electrode the 6th, the grid on described dielectric layer 4 and described dielectric layer 4 Electrode 5 and the SU-8 stressor layers 7 arranging on described graphene layer 2；
Wherein, the drain electrode 3 on described graphene layer the 2nd, described graphene layer 2 and source electrode the 6th, described dielectric layer 4 and be situated between Gate electrode 5 in electric layer 4 and described SU-8 stressor layers 7 become curly.
Preferably, described drain electrode 3 and source electrode 6 are positioned at gate electrode 5 both sides.
Preferably, described Graphene 2 is Graphene or the redox Graphene of not more than 7 layers.
Preferably, described dielectric layer 4 is SiO2Or the gate dielectric material of high-k.
Preferably, in described drain electrode the 3rd, gate electrode 5 and source electrode 6, adhesive layer material thickness is 5nm-30nm, conductive layer Thickness is 10nm-100nm.
Beneficial effects of the present invention is as follows:
(1) positive grid structure makes ultra-thin dielectric layer be used, and enhances the regulation and control to Graphene conductance for the grid voltage Ability.Graphene field effect cast sensor requirements graphene conductive raceway groove must be exposed in test environment, thus existing flat Face two-dimensional graphene field-effect cast sensor often uses back grid structure or liquid grid structure.The present invention utilizes self-assembling technique to create Propose to new property a kind of three-dimensional positive grating graphene field effect cast biochemical sensor, on the one hand overcome backgate device grid voltage High, the problem of control ability difference, on the other hand avoids liquid gate device poor stability, output signal non-linear with charge-doping amount Problem.Widen the application in fields such as weak electric signal and implanted detections for the sensor, be expected to realize higher sensitive simultaneously Degree.
(2) " micro-pipe " formula structure reduces the structural complexity of biochemical sensor and manufacture difficulty and cost, improves it Reliability.Based on the graphene field effect pipe of SU-8 stressor layers by three-dimensional " micro-pipe " the formula structure being self-assembly of, its radius In 80 μm of-1600 μ m adjustable, thus stronger capillarity is had to liquid test substance, can be by atomic during work The solution to be measured of amount is automatically drawn into graphene conductive channel region and completes detection.The biochemical biography with liquid grating graphene field effect cast Sensor is compared, and this self assembly sensor is without the accessories such as extra fluid channel, sealing device, the structure of gate electrode and grid The applying of voltage is also greatly simplified, thus reduces difficulty and the cost of manufacturing process, improves reliability.
(3) compared with two dimensional surface sensor, self assembly " micro-pipe " the formula three-dimension sensor in the present invention significantly reduces Chip area footprints, meanwhile, keep even increasing graphene conductive raceway groove contact with test substance (gas or liquid) and Advantage big for Graphene specific surface area has been performed to ultimate attainment by the area reacting.This is miniaturized with biochemical sensor, integrated The development trend changed is consistent.
Brief description
Below in conjunction with the accompanying drawings the detailed description of the invention of the present invention is described in further detail.
Fig. 1 illustrates biochemical sensor structure chart of the present invention.
Detailed description of the invention
In order to be illustrated more clearly that the present invention, below in conjunction with preferred embodiments and drawings, the present invention is done further Bright.Parts similar in accompanying drawing are indicated with identical reference.It will be appreciated by those skilled in the art that institute is concrete below The content describing is illustrative and be not restrictive, and should not limit the scope of the invention with this.
As it is shown in figure 1, utilize SU-8 to answer based on the self assembly graphene field effect cast biochemical sensor of SU-8 stressor layers It is a kind of " micro-pipe " formula three-dimensional grapheme that power layer drives plane positive grid graphene field effect pipe (GFET) self assembly on silicon substrate Field-effect cast biochemical sensor, specifically includes:
Dielectric layer the 4th, the part that the 2nd, monocrystalline substrate the 1st, graphene layer is arranged on described graphene layer 2 is arranged on described In monocrystalline substrate 1, another part is arranged on the drain electrode 3 on described graphene layer 2 and source electrode the 6th a, part is arranged on institute Stating in monocrystalline substrate 1, another part is arranged on the gate electrode 5 on described dielectric layer 4 and on described graphene layer 2 Drain electrode 3 and source electrode 6 and the gate electrode 5 on described dielectric layer 4 and the SU-8 stress arranging on described graphene layer 2 Layer 7；
Wherein, the drain electrode 3 on described graphene layer the 2nd, described graphene layer 2 and source electrode the 6th, described dielectric layer 4 and be situated between Gate electrode 5 in electric layer 4 and described SU-8 stressor layers 7 become curly.
Concrete, described Graphene the 2nd, dielectric layer the 4th, source electrode the 6th, drain electrode 3 and gate electrode 5 form a two-dimensional graphene FET, it is " micro-pipe " formula three-dimensional structure that SU-8 stressor layers 7 makes graphene field effect pipe self assembly, thus obtains a kind of base Self assembly graphene field effect cast biochemical sensor in SU-8 stressor layers.
During working sensor, gate electrode the 5th, source electrode 6 is connected with the both positive and negative polarity of variable voltage source A respectively, drain electrode the 3rd, source Electrode 6 is connected with the both positive and negative polarity of variable voltage source B respectively, is used for detecting the micro-of electric current (Ids) between drain electrode 3 and source electrode 6 Weak-current meter accesses between positive pole and the drain electrode 3 of variable voltage source B.
Described Graphene 3 is individual layer, multilayer (being less than 7 layers) Graphene or redox Graphene.
Described dielectric layer 4 is silica (SiO2) etc. tradition gate dielectric material, or alundum (Al2O3) (Al2O3), dioxy Change hafnium (HfO2) etc. the gate dielectric material of high-k.
Described drain electrode the 3rd, gate electrode 5 and source electrode 6 use chrome gold (Cr/Au), titanium/gold (Ti/Au), palladium/gold (Pd/ Au), the conventional Graphene electrodes material such as titanium/platinum (Ti/Pt) makes, wherein, and the adhesion layer material such as chromium (Cr), titanium (Ti), palladium (Pd) Material thickness is 5nm-30nm, and the gold conductive layer thickness such as (Au), platinum (Pt) is 10nm-100nm.
Described SU-8 stressor layers 7, for being a kind of negative photoresist, utilizes the method for spin coating to be covered in Graphene the 3rd, source electrode 6th, on drain electrode 3 and gate electrode 5 and form good contact therewith, the SU-8 stressor layers 7 of spin coating through the insufficient exposure of ultraviolet, Stress gradient can be formed in a thickness direction after heat treatment, development and acetone treatment, remove rear drive Graphene at sacrifice layer 2 3rd, the two-dimensional graphene FET of source electrode the 6th, the drain electrode 3 under dielectric layer the 4th, SU-8 stressor layers 7 and gate electrode 5 composition is from group Dress is " micro-pipe " formula three-dimensional grapheme field-effect cast biochemical sensor；Wherein, the radius of " micro-pipe " is by the kind of SU-8 photoresist When class (the 2000.5th, the 2015th, 2025 etc.), spin coating speed and time, heat treatment temperature and time, ultraviolet exposure energy, development Between wait determine, adjustable in 80 μm of-1600 μ m.
Additionally, complete " micro-pipe " formula three-dimensional grapheme field-effect cast biochemical sensor of self assembly in particular solution (for example in acetone soln) can also be reduced to two-dimensional structure.
Heretofore described biochemical sensor operation principle is:
First sensor is placed in detection environment (liquid medium or gas medium), due to self assembly " micro-pipe " formula structure Capillarity, biochemical substances to be measured will be automatically in " micro-pipe "；Biochemical substances particulate to be measured and the graphite of " micro-pipe " inwall Alkene 3 conducting channel forms adsorption, forms physical doping to Graphene 3, changes its band structure；Graphene 3 band structure Change can be at certain grid voltage (voltage V between gate electrode 5 and source electrode 6GS) and drain-source voltage (drain electrode 3 He Voltage V between source electrode 6DSUnder), by detecting its drain-source current (electric current I between drain electrode 3 and source electrode 6DS) change Change and detect, thus, the doping level (corresponding with the species of tested biochemical substances and concentration) suffered by Graphene 3 surface is i.e. Can be detected, i.e. species (Type) and the concentration (Concentration) of test substance is VGS、VDS、IDSFunction, can To be tried to achieve by analytical Calculation.
In sum, this sensor utilizes SU-8 stressor layers 7 to drive the positive grid graphene field effect pipe of the plane on silicon substrate (GFET) self assembly is a kind of " micro-pipe " formula three-dimensional grapheme field-effect cast biochemical sensor.
Obviously, the above embodiment of the present invention is only for clearly demonstrating example of the present invention, and is not right The restriction of embodiments of the present invention, for those of ordinary skill in the field, also may be used on the basis of the above description To make other changes in different forms, cannot all of embodiment be given exhaustive here, every belong to this What bright technical scheme was extended out obviously changes or changes the row still in protection scope of the present invention.

Claims (5)

1. the self assembly graphene field effect cast biochemical sensor based on SU-8 stressor layers, it is characterised in that include,
Monocrystalline substrate (1)；
Graphene layer (2)；
The dielectric layer (4) being arranged on described graphene layer (2)；
A part is arranged in described monocrystalline substrate (1), and another part is arranged on the drain electrode on described graphene layer (2) And source electrode (6) (3)；
A part is arranged in described monocrystalline substrate (1), and another part is arranged on the gate electrode (5) on described dielectric layer (4)；
And,
Drain electrode (3) on described graphene layer (2) and source electrode (6), at described dielectric layer (4) and described dielectric layer (4) On gate electrode (5) and in the upper SU-8 stressor layers (7) arranging of described graphene layer (2)；
Wherein, described graphene layer (2), the drain electrode (3) on described graphene layer (2) and source electrode (6), described dielectric layer (4) become curly with the gate electrode (5) on dielectric layer (4) and described SU-8 stressor layers (7).
2. biochemical sensor according to claim 1, it is characterised in that described drain electrode (3) and source electrode (6) are positioned at grid Electrode (5) both sides.
3. biochemical sensor according to claim 1, it is characterised in that the graphite that described Graphene (2) is not more than 7 layers Alkene or redox Graphene.
4. biochemical sensor according to claim 1, it is characterised in that described dielectric layer (4) is SiO2Or high-k Gate dielectric material.
5. biochemical sensor according to claim 1, it is characterised in that described drain electrode (3), gate electrode (5) and source electricity In pole (6), adhesive layer material thickness is 5nm-30nm, and conductive layer thickness is 10nm-100nm.
CN201610421190.3A 2016-06-14 2016-06-14 A kind of self assembly graphene field effect cast biochemical sensor based on SU 8 stressor layers Pending CN106066347A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610421190.3A CN106066347A (en) 2016-06-14 2016-06-14 A kind of self assembly graphene field effect cast biochemical sensor based on SU 8 stressor layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610421190.3A CN106066347A (en) 2016-06-14 2016-06-14 A kind of self assembly graphene field effect cast biochemical sensor based on SU 8 stressor layers

Publications (1)

Publication Number Publication Date
CN106066347A true CN106066347A (en) 2016-11-02

Family

ID=57421122

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610421190.3A Pending CN106066347A (en) 2016-06-14 2016-06-14 A kind of self assembly graphene field effect cast biochemical sensor based on SU 8 stressor layers

Country Status (1)

Country Link
CN (1) CN106066347A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107394001A (en) * 2017-06-09 2017-11-24 北京交通大学 A kind of miniature ultra wide band photo-detector based on graphene and preparation method thereof
CN112151629A (en) * 2020-09-22 2020-12-29 北京邮电大学 Micro-tube type three-dimensional heterojunction device structure and preparation method and application thereof
CN114295222A (en) * 2021-12-18 2022-04-08 复旦大学 Tubular bolometer based on vanadium oxide film and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080062964A (en) * 2006-12-30 2008-07-03 고려대학교 산학협력단 Gas sensor using nano material and method for preparing the same
CN103459137A (en) * 2011-03-18 2013-12-18 国际商业机器公司 Nitride gate dielectric for graphene MOSFET
CN204694669U (en) * 2015-02-16 2015-10-07 郑州炜盛电子科技有限公司 Mems gas sensor
CN105097913A (en) * 2014-05-05 2015-11-25 中芯国际集成电路制造(上海)有限公司 Field effect transistor and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080062964A (en) * 2006-12-30 2008-07-03 고려대학교 산학협력단 Gas sensor using nano material and method for preparing the same
CN103459137A (en) * 2011-03-18 2013-12-18 国际商业机器公司 Nitride gate dielectric for graphene MOSFET
CN105097913A (en) * 2014-05-05 2015-11-25 中芯国际集成电路制造(上海)有限公司 Field effect transistor and manufacturing method thereof
CN204694669U (en) * 2015-02-16 2015-10-07 郑州炜盛电子科技有限公司 Mems gas sensor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TAO DENG等: "Self-folding graphene-polymer bilayers", 《APPLIED PHYSICS LETTERS》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107394001A (en) * 2017-06-09 2017-11-24 北京交通大学 A kind of miniature ultra wide band photo-detector based on graphene and preparation method thereof
CN107394001B (en) * 2017-06-09 2019-04-09 北京交通大学 A kind of miniature ultra wide band optical detector and preparation method thereof based on graphene
CN112151629A (en) * 2020-09-22 2020-12-29 北京邮电大学 Micro-tube type three-dimensional heterojunction device structure and preparation method and application thereof
CN114295222A (en) * 2021-12-18 2022-04-08 复旦大学 Tubular bolometer based on vanadium oxide film and preparation method thereof

Similar Documents

Publication Publication Date Title
Lee et al. A novel biosensor based on hafnium oxide: Application for early stage detection of human interleukin-10
Reddy et al. High-k dielectric Al 2 O 3 nanowire and nanoplate field effect sensors for improved pH sensing
Cheng et al. Mechanism and optimization of pH sensing using SnO2 nanobelt field effect transistors
Kim et al. Probing flow velocity with silicon nanowire sensors
CN104838249A (en) Biosensor apparatus and methods comprising localized desalting systems
CN106093150A (en) A kind of self assembly graphene field effect cast biochemical sensor manufacture method
Sinha et al. A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling
Bae et al. High performance of silicon nanowire-based biosensors using a high-k stacked sensing thin film
CN102175744A (en) Electrochemical sensor chip with digital microfluidic technology
CN106066347A (en) A kind of self assembly graphene field effect cast biochemical sensor based on SU 8 stressor layers
Zeng et al. A reference-less semiconductor ion sensor
Yue et al. Fabrication of integrated field-effect transistors and detecting system based on CVD grown graphene
Chen et al. Contacting versus insulated gate electrode for Si nanoribbon field-effect sensors operating in electrolyte
US11796537B2 (en) Sealed fluid chamber with planarization for biomolecular sensors and related methods
US20140295573A1 (en) Biosensor with dual gate structure and method for detecting concentration of target protein in a protein solution
US10739305B1 (en) Biosensing systems and methods using a FET
CN108371962A (en) A kind of micro-fluidic chip and preparation method thereof
CN103592353B (en) Based on the biology sensor of the linear channel ion sensitive field effect transistor that wriggles
CN105353000B (en) Semiconductor devices and its detection method
CN208320830U (en) A kind of micro-fluidic chip
TWI404927B (en) A capillary electrophoresis chip with integrated top-bottom opposed electrochemical sensing electrodes and its fabrication methods
US20190310225A1 (en) Microfluidic organic electrochemical transistor sensors for real time nitric oxide detection
CN115963161A (en) Carbon nanotube field effect transistor biosensor of wavy sensing interface, preparation method and application
Lehoucq et al. Highly sensitive pH measurements using a transistor composed of a large array of parallel silicon nanowires
KR101195155B1 (en) Method for fabricating lab-on-a-chip for nano band electrode and method for capillary electrophoresis electrochemical detection apparatus using nano band electrode

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20161102