CN106092234B - Hollow out heat membrane type flow sensor with rectifier structure and preparation method thereof - Google Patents
Hollow out heat membrane type flow sensor with rectifier structure and preparation method thereof Download PDFInfo
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- CN106092234B CN106092234B CN201610383122.2A CN201610383122A CN106092234B CN 106092234 B CN106092234 B CN 106092234B CN 201610383122 A CN201610383122 A CN 201610383122A CN 106092234 B CN106092234 B CN 106092234B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/76—Devices for measuring mass flow of a fluid or a fluent solid material
- G01F1/86—Indirect mass flowmeters, e.g. measuring volume flow and density, temperature or pressure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
- B81B1/002—Holes characterised by their shape, in either longitudinal or sectional plane
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00047—Cavities
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Abstract
The present invention relates to a kind of hollow out heat membrane type flow sensor and preparation method thereof with rectifier structure.Hollow out heat membrane type flow sensor with rectifier structure, it includes silicon substrate, positioned at silicon substrate front and with the membrane structure of adding thermal resistance and multiple temperature elements, silicon substrate has insulating chamber, the part of membrane structure being located above the insulating chamber is defined as hotting mask, and membrane structure, which has, is located at hotting mask upstream side and downstream side and for the fluid flowed through to be rectified into advection state and increases membrane structure two rectifier structures long-pending with fluid contact level.Design with rectifier structure, on the one hand the fluid to be measured for flowing through hotting mask can be rectified into advection state, to improve its detection accuracy, on the other hand increases the contact area of fluid to be measured and hotting mask, therefore heat exchange efficiency is improved, so that detectivity is improved.
Description
Technical field
The present invention relates to a kind of hollow out heat membrane type flow sensor and its system with rectifier structure based on MEMS technology
Make method, belongs to micro processing field.
Background technique
Flow measurement suffers from extremely wide in fields such as the energy, biology, automobile, aerospace, scientific research, industrial stokeholds
General application, such as water, natural gas, steam and the common energy monitoring of oil product of energy field, blood in biotechnology, urine
Deng monitoring；The fields such as the air inflow monitoring of automobile engine, the flowmeter for all using quantity extremely huge, they are can source capsule
Reason efficiently utilizes, the indispensable tool of business accounting.It is also efficiently to utilize the energy, realization is energy-saving, and it is dirty to reduce environment
Dye, improves production quality, the important tool increased economic efficiency with management level occupies an important position in national economy.
The flowmeter of different application, working principle is also different, and main operational principle has mechanics principle, calorifics principle, Principles of Acoustics, light
Learn principle etc..
Thermal flowmeter is a kind of new flowmeter to grow up on the basis of early stage hot wire anemometer, is based on calorifics
The theoretical of " thermal discharge of gas is directlyed proportional to caloric receptivity to the mass flow of the gas " that principle, i.e. Thomas propose carries out work
Make, because it has many advantages, such as measurement accuracy height, responds fast, be widely used to Aeronautics and Astronautics, the energy, medicine, automobile at present
The industries such as industry and Natural Gas Pipeline Transportation.Thermal flowmeter can be divided into hot-wire flowmeter and hot diaphragm type flowmeter, master
It wants working method to have constant temperature differential and constant current mode, is realized by different signal control with processing circuit.
Hot-wire flowmeter usually by perception air mass flow thermosensitive wire (hot line) and the temperature that is modified to intake air temperature
Degree compensation thermosensitive wire (cold line) is constituted, and carries out mass flow measurement using the heat transmitting between hot line and air.Hot-wire flow
Haggle over conventional flow meters, can directly measure the mass flow of inlet air, without components such as pressure compensations, there is intake resistance
Small, the features such as response characteristic is good, measurement accuracy is high.But usual thermosensitive wire exposure is in air, so that after long-time use
Thermosensitive wire causes measurement accuracy to decline by particle contamination in air, and on the other hand in flow at high speed, the grains of sand in air are easy
Heated filament is struck off, sensor failure is caused；In addition, hot line consistency is poor, so that batch production is more difficult.Hot diaphragm type flow sensing
Device is made of MEMS technology, and good product consistency is easy to produce in batches, at low cost, not easy to pollute.Its working principle is that quilt
Fluid measured flows through hotting mask, heat exchange occurs with hotting mask, to cause temperature local on hotting mask to change, by being produced on heat
Thermistor on film detects the temperature variation, to test out the mass flow of fluid to be measured.Fluid to be measured and hotting mask
Heat exchanger effectiveness it is higher, detectivity is higher.The fluid of identical mass flow, the surface area for participating in heat exchange is bigger, changes
Heat is more.
Summary of the invention
In order to solve the problems in the prior art, the hollow out heat with rectifier structure that the purpose of the present invention is to provide a kind of
Membrane type flow sensor and preparation method thereof.
In order to achieve the above object, the present invention provides a kind of hollow out heat membrane type flow sensor with rectifier structure,
It includes silicon substrate, positioned at silicon substrate front and with the membrane structure of adding thermal resistance and multiple temperature elements, silicon substrate tool
There is insulating chamber, the part of membrane structure being located above the insulating chamber is defined as hotting mask, and membrane structure has position respectively
It is contacted in hotting mask upstream side and downstream side and for the fluid flowed through to be rectified into advection state and increases membrane structure with fluid
Two rectifier structures of area.
Further, rectification part includes multiple boss and multiple grooves, and boss and groove are intervally installed, boss and recessed
The length direction of slot is flowed to each along fluid to be arranged.
Further, membrane structure includes first layer dielectric film, the temperature-sensitive including adding thermal resistance and multiple temperature elements
Layer, second layer dielectric film are used for above-mentioned adding thermal resistance and multiple temperature elements and external signal control and processing circuit phase
Signal lead, the passivation layer of connection.
Further, rectifier structure includes multiple boss and multiple grooves, and boss and groove are intervally installed, each
Boss is located at heat by temperature-sensitive strip protrusion, the part for being located at temperature-sensitive strip protrusion top of second layer dielectric film, passivation layer
The part of quick strip protrusion top constitutes, each groove by second layer dielectric film the two neighboring temperature-sensitive strip protrusion that is located at
Between part, passivation layer the part being located between two neighboring temperature-sensitive strip protrusion constitute, the length side of temperature-sensitive strip protrusion
It is arranged to being flowed to along fluid.
Further, heat-sensitive layer further includes temperature-sensitive strip protrusion.
Further, multiple temperature elements include that the edge of membrane structure is arranged in and flows for detecting to be flowed on hotting mask
At least one first temperature element of the initial temperature of body, the two sides for being distributed in adding thermal resistance are simultaneously flowed through for detection fluid respectively
At least two second temperature elements of the temperature before and after adding thermal resistance.
Further, adding thermal resistance and the second temperature element are located at the top of insulating chamber.
Further, multiple temperature elements further include being arranged between adding thermal resistance and the second temperature element to be used in fact
When detect hotting mask temperature at least one third temperature element.
Further, the length direction of adding thermal resistance and multiple temperature elements is each perpendicular to fluid flow direction setting.
The present invention also provides another technical solutions: a kind of above-mentioned hollow out hot diaphragm type flow biography with rectifier structure
The production method of sensor, comprising the following steps:
A. first layer dielectric film is grown respectively in the front and back of silicon substrate；
B. temperature-sensitive layer film is grown on being located at positive first layer dielectric film, and graphically forms adding thermal resistance, more
A temperature element and multiple temperature-sensitive strips protrusion, the length direction of temperature-sensitive strip protrusion is flowed to along fluid to be arranged；
C. growth regulation two layer medium film, and it is graphical, it is respectively formed at corresponding adding thermal resistance and temperature element multiple
Fairlead；
D. lead layer film is grown, and graphical, forms multiple signal leads, each signal lead one end passes through lead
Hole connects adding thermal resistance or a temperature element；
E. growth of passivation layer, and it is graphical, and forming aperture at the other end of each signal lead of correspondence makes signal lead
Expose from the aperture；
F. the silicon substrate back side is corroded to hotting mask and is exposed, and form insulating chamber.
By adopting the above-described technical solution, the present invention has the hollow out heat membrane type flow sensor and its system of rectifier structure
Make method, has the advantages that
1. having the design of rectifier structure, on the one hand the fluid to be measured for flowing through hotting mask can be rectified into advection state, thus
Its detection accuracy is improved, on the other hand increases the contact area of fluid to be measured and hotting mask, therefore improve heat exchange efficiency, thus
So that detectivity is improved；
2. mass flow sensor is processed using micrometer-nanometer processing technology, therefore its overall volume is small, is easy to mass
Production, it is at low cost.
Detailed description of the invention
Attached drawing 1 is the schematic perspective view of hollow out heat membrane type flow sensor in the present embodiment；
Attached drawing 2 is the AA ' the schematic diagram of the section structure in attached drawing 1；
Attached drawing 3 is the BB ' the schematic diagram of the section structure in attached drawing 1；
Attached drawing 4 is the CC ' the schematic diagram of the section structure in attached drawing 1；
Attached drawing 5 is the step a of the production method of the hollow out heat membrane type flow sensor in the present embodiment with rectifier structure
Structural schematic diagram；
Attached drawing 6 is the step b of the production method of the hollow out heat membrane type flow sensor in the present embodiment with rectifier structure
Structural schematic diagram；
Attached drawing 7 is the step b of the production method of the hollow out heat membrane type flow sensor in the present embodiment with rectifier structure
The structural schematic diagram of middle rectification part；
Attached drawing 8 is the step c of the production method of the hollow out heat membrane type flow sensor in the present embodiment with rectifier structure
Structural schematic diagram；
Attached drawing 9 is the step c of the production method of the hollow out heat membrane type flow sensor in the present embodiment with rectifier structure
The structural schematic diagram of middle rectification part；
Attached drawing 10 is the step d of the production method of the hollow out heat membrane type flow sensor in the present embodiment with rectifier structure
Structural schematic diagram；
Attached drawing 11 is the step e of the production method of the hollow out heat membrane type flow sensor in the present embodiment with rectifier structure
Structural schematic diagram；
Attached drawing 12 is the step e of the production method of the hollow out heat membrane type flow sensor in the present embodiment with rectifier structure
The structural schematic diagram of middle rectification part；
Attached drawing 13 is the step f of the production method of the hollow out heat membrane type flow sensor in the present embodiment with rectifier structure
Structural schematic diagram.
Figure label are as follows:
1, silicon substrate；11, insulating chamber；2, rectifier structure；21, boss；22, groove；3, first layer dielectric film；40,
Adding thermal resistance；41, the first temperature element；42, the second temperature element；43, third temperature element；44, temperature-sensitive strip protrusion；5,
Two layer medium film；51, fairlead；6, signal lead；7, passivation layer；71, aperture.
Specific embodiment
The preferred embodiments of the present invention will be described in detail with reference to the accompanying drawing, so that advantages and features of the invention energy
It is easier to be readily appreciated by one skilled in the art.
Referring to attached drawing 1 to attached drawing 4, the hollow out heat membrane type flow sensor with rectifier structure in the present embodiment, it is wrapped
Silicon substrate 1, membrane structure positive positioned at the silicon substrate 1 and with adding thermal resistance 40 and multiple temperature elements are included, silicon substrate 1 has
There is insulating chamber 11, the part for being located at 11 top of insulating chamber of membrane structure is defined as hotting mask, and membrane structure, which has, to be divided
Not Wei Yu hotting mask upstream side and downstream side two rectifier structures 2, which is used to the fluid flowed through being rectified into advection
State, and for increasing membrane structure and fluid contact level product, to improve the heat exchange efficiency of hotting mask and fluid.Above-mentioned is upper
Trip side and downstream side are defined according to fluid flow direction, and in the present embodiment, fluid flows in left-right direction.
Above-mentioned insulating chamber 11 is located at the central part of silicon substrate 1, and insulating chamber 11 penetrates silicon substrate 1, makes hotting mask
Expose from insulating chamber 11 lower surface.
Above-mentioned membrane structure includes first layer dielectric film 3, heat-sensitive layer, second layer dielectric film 5, is used to add above-mentioned
Signal lead 6, the passivation layer 7 that thermal resistance 40 and multiple temperature elements are connected with external signal control with processing circuit.
For first layer dielectric film 3 with a thickness of 0.3 μm~2 μm, material is preferably silica, silicon nitride or silicon oxynitride, is gone back
It can be silica and silicon nitride composite membrane.
Temperature-sensitive layer material be preferably one of doped amorphous silicon, doped monocrystalline silicon, DOPOS doped polycrystalline silicon, vanadium oxide or its
In several composite material, can also be one of Ti, Pt, Ni, Cr or in which the composite material of several compositions, can be with
For thermocouple materials such as P-Si/n-Si or Si/Al, it can also be Si/GeSi superlattices, can also be PN junction.
Heat-sensitive layer includes above-mentioned adding thermal resistance 40 and multiple temperature elements.Heat-sensitive layer further includes that will hereafter carry out specifically
The temperature-sensitive strip protrusion 44 of description.
Multiple temperature elements include at least one first temperature element 41 that membrane structure edge is arranged in, and are used for detection stream
Enter the initial temperature to hotting mask upper fluid.In the present embodiment as shown in Fig. 1, there are two the first temperature elements 41, sets respectively
It sets in opposite two edge (hereinafter referred to as left edge and right hand edge) of hotting mask structure, when fluid is flowed into from left edge,
It then works positioned at the first temperature element 41 of left edge, when fluid is flowed into from right hand edge, is then located at the first thermometric of right hand edge
Element 41 works.
Multiple temperature elements further include at least two second temperature elements 42 for being distributed in 40 two sides of adding thermal resistance, for dividing
Not Jian Ce fluid flow through the temperature before and after adding thermal resistance 40.In the present embodiment as shown in Fig. 1, the second temperature element
There are two 42, it is separately positioned on the left and right sides of adding thermal resistance 40, is respectively designated as left temperature element and right temperature element.
Preferably, multiple temperature elements further include at least one be arranged between adding thermal resistance 40 and the second temperature element 42
A third temperature element 43 is used for real-time detection hotting mask temperature, and there are two the third temperature elements 43 in the present embodiment, sets respectively
It sets between two the second temperature elements 42 and the first temperature element 41.
Adding thermal resistance 40 and the second temperature element 42 and third temperature element 43 are located at the top of insulating chamber 111, i.e.,
Adding thermal resistance 40 and the second temperature element 42, third temperature element 43 belong to a part of hotting mask, and the first temperature element 41 is then
Positioned at the top of the part in addition to insulating chamber 11 of silicon substrate 1.
Preferably, the length direction of adding thermal resistance 40 and multiple temperature elements is each perpendicular to fluid flow direction setting.
For second layer dielectric film 5 with a thickness of 0.2 μm~1 μm, material is preferably silica, silicon nitride or silicon oxynitride, is gone back
It can be silica and silicon nitride composite membrane.There are multiple leads through second layer dielectric film 5 on second layer dielectric film 5
Hole 51, the position of multiple fairleads 51 respectively correspond the end of adding thermal resistance 40 and the end of multiple temperature elements.
The metal materials such as 6 material of signal lead preferred Al, Ti, Pt, TiN, W and its alloy or DOPOS doped polycrystalline silicon, germanium etc. are low
Hinder semiconductor material.One end of signal lead 6 is connected by fairlead 51 with adding thermal resistance 40 or temperature element.
For passivation layer 7 with a thickness of 0.3 μm~2 μm, it can also be oxygen that material, which is preferably silica, silicon nitride or silicon oxynitride,
SiClx and silicon nitride composite membrane.Passivation layer 7 has multiple multiple apertures 71 through passivation layer 7, the position point of multiple apertures 71
Do not correspond to the other end of each signal lead 6, thus the other end of signal lead 6 can by aperture 71 and external signal control with
Processing circuit is connected.
Above-mentioned rectifier structure includes multiple boss 21 and multiple grooves 22, and boss 21 and groove 22 are intervally installed,
The length direction of boss 21 and groove 22 is flowed to each along fluid to be arranged.Each boss 21 is by temperature-sensitive strip protrusion 44, the second layer
Dielectric film 5 be located at temperature-sensitive strip protrusion 44 top part, passivation layer 7 be located at temperature-sensitive strip protrusion 44 top part
It constitutes.Each groove 22 is by the part between two neighboring temperature-sensitive strip protrusion 44 of second layer dielectric film 5, passivation layer
7 part between two neighboring temperature-sensitive strip protrusion 44 is constituted, and the length direction of temperature-sensitive strip protrusion 44 is along fluid
Flow direction setting.
The working principle of this hollow out heat membrane type flow sensor with rectifier structure are as follows: controlled and located by external signal
Reason circuit is controlled, so that the temperature of hotting mask is consistently higher than the temperature into the detected fluid of flow sensor, and the temperature difference begins
Value is kept constant eventually.Adding thermal resistance 40 is symmetrically distributed the second temperature element 42, Wheatstone bridge is formed, for measuring fluid
Mass flow.When fluid passes through, fluid is rectified structure 2 and is rectified into advection state, positioned at the of 40 upstream of adding thermal resistance
Two temperature element 42(are one in left temperature element and right temperature element according to the flow direction of fluid), since fluid temperature (F.T.) is small
It is carried away by the flow, is caused at second temperature element 42 in the partial heat of hotting mask temperature, the second temperature element 42 of upstream
Temperature reduces, and for the second temperature element 42 of positive temperature coefficient, resistance value is reduced；And be located at adding thermal resistance downstream second is surveyed
Warm element 42(is another in left temperature element and right temperature element according to the flow direction of fluid), since fluid is by heating
Resistance 40 realizes heating, when at its second temperature element 42 by downstream, heat exchange is carried out, so that the second thermometric of downstream
Element 42 is heated and temperature increases, and similarly for the second temperature element 42 of positive temperature coefficient, resistance value increases, and passes through outside
The reduction and increase of signal control and processing circuit detection the second temperature element of upstream and downstream 42, pass to realize through inflow-rate of water turbine
The flow measurement of the fluid of sensor.
Referring to attached drawing 5 to attached drawing 13, a kind of production side of the above-mentioned hollow out heat membrane type flow sensor with rectifier structure
Method, and the material described above used makes corresponding component, the thickness and depth equidimension of corresponding component are according to institute above
Show correspondingly-sized production, the production method the following steps are included:
A. first layer dielectric film 3 is grown respectively in the front and back of silicon substrate 1, as shown in Fig. 5；
B. temperature-sensitive layer film is grown on being located at positive first layer dielectric film 3, and graphically forms adding thermal resistance
40, multiple temperature elements and multiple temperature-sensitive strip protrusions 44, adding thermal resistance 40, multiple temperature elements length direction perpendicular to
Fluid flow direction setting, the length direction of temperature-sensitive strip protrusion 44 is flowed to along fluid to be arranged, as shown in attached drawing 6 and attached drawing 7；
C. growth regulation two layer medium film 5, and it is graphical, it is respectively formed at corresponding adding thermal resistance 40 and temperature element
Multiple fairleads 51, as shown in Figure 8 and Figure 9；
D. lead layer film is grown, and graphical, forms multiple signal leads 6, each 6 one end of signal lead is by drawing
String holes 51 connects adding thermal resistance or a temperature element, as shown in Fig. 10；
E. growth of passivation layer 7, and it is graphical, and forming aperture 71 at the other end of each signal lead 6 of correspondence makes signal
Lead 6 exposes from the aperture 71, as shown in attached drawing 11 and attached drawing 12；
F. 1 back side of silicon substrate is corroded to hotting mask and is exposed, and form insulating chamber 11, as shown in Fig. 13.
This has the hollow out heat membrane type flow sensor and preparation method thereof of rectifier structure, has the advantages that
1. having the design of rectifier structure, on the one hand the fluid to be measured for flowing through hotting mask can be rectified into advection state, thus
Its detection accuracy is improved, on the other hand increases the contact area of fluid to be measured and hotting mask, therefore improve heat exchange efficiency, thus
So that detectivity is improved；
2. mass flow sensor is processed using micrometer-nanometer processing technology, therefore its overall volume is small, is easy to mass
Production, it is at low cost.
Embodiment is combined to elaborate the present invention above, only technical concepts and features to illustrate the invention,
Its object is to allow person skilled in the art to understand the contents of the present invention and be implemented, can not be limited with this of the invention
Protection scope, the equivalent change or modification that all Spirit Essences according to the present invention are done, should all cover in protection scope of the present invention
It is interior.
Claims (8)
1. a kind of hollow out heat membrane type flow sensor with rectifier structure, it includes silicon substrate (1), is located at the silicon substrate (1)
Front and the membrane structure with adding thermal resistance (40) and multiple temperature elements, the silicon substrate (1) have insulating chamber
(11), the part of the membrane structure being located above the insulating chamber (11) is defined as hotting mask, it is characterised in that: described
Membrane structure, which has, is located at the hotting mask upstream side and downstream side and for the fluid flowed through to be rectified into advection state simultaneously
Increase by two rectifier structures (2) of membrane structure and fluid contact level product；The membrane structure includes first layer dielectric film
(3), include the heat-sensitive layer of the adding thermal resistance (40) and multiple temperature elements, second layer dielectric film (5), be used to add above-mentioned
Signal lead (6), the passivation layer that thermal resistance (40) and multiple temperature elements are connected with external signal control with processing circuit
(7)；The rectifier structure (2) includes multiple boss (21) and multiple grooves (22), the boss (21) and groove (22)
It is intervally installed, each boss (21) is located at institute by temperature-sensitive strip raised (44), the second layer dielectric film (5)
State the portion of the part above temperature-sensitive strip raised (44), the passivation layer (7) being located above the temperature-sensitive strip raised (44)
Divide and constitute, each groove (22) is located at the two neighboring temperature-sensitive strip protrusion by the second layer dielectric film (5)
(44) part of part, the passivation layer (7) between being located between the two neighboring temperature-sensitive strip raised (44) is constituted,
The length direction of the temperature-sensitive strip raised (44) is flowed to along fluid to be arranged.
2. the hollow out heat membrane type flow sensor according to claim 1 with rectifier structure, it is characterised in that: described
Rectifier structure includes multiple boss (21) and multiple grooves (22), and the boss (21) and groove (22) are intervally installed,
The length direction of boss (21) and groove (22) is flowed to each along fluid to be arranged.
3. the hollow out heat membrane type flow sensor according to claim 1 with rectifier structure, it is characterised in that: described
Heat-sensitive layer further includes that the temperature-sensitive strip is raised (44).
4. the hollow out heat membrane type flow sensor according to claim 1 with rectifier structure, it is characterised in that: described
Multiple temperature elements include the edge of the membrane structure being arranged in and for detecting the initial temperature for being flowed into hotting mask upper fluid
At least one first temperature element (41), be distributed in the adding thermal resistance (40) two sides and for respectively detection fluid flow through
At least two second temperature elements (42) of the temperature before and after adding thermal resistance (40).
5. the hollow out heat membrane type flow sensor according to claim 4 with rectifier structure, it is characterised in that: described
Adding thermal resistance (40) and the second temperature element (42) are located at the top of the insulating chamber (11).
6. the hollow out heat membrane type flow sensor according to claim 4 with rectifier structure, it is characterised in that: described
Multiple temperature elements further include being arranged between the adding thermal resistance (40) and second temperature element (42) for real-time
Detect at least one third temperature element (43) of hotting mask temperature.
7. the hollow out heat membrane type flow sensor according to claim 1 with rectifier structure, it is characterised in that: described
The length direction of adding thermal resistance (40) and multiple temperature elements is each perpendicular to fluid flow direction setting.
8. a kind of production side of the hollow out heat membrane type flow sensor of any of claims 1-7 with rectifier structure
Method, comprising the following steps:
A grows first layer dielectric film (3) in the front and back of silicon substrate (1) respectively；
B grows temperature-sensitive layer film on being located at the positive first layer dielectric film (3), and graphically forms heating electricity
Hinder (40), multiple temperature elements and multiple temperature-sensitive strips protrusion (44), the length direction of the temperature-sensitive strip raised (44)
It flows to and is arranged along fluid；
C growth regulation two layer medium film (5), and it is graphical, it is respectively formed at corresponding adding thermal resistance (40) and temperature element
Multiple fairleads (51)；
D grows lead layer film, and graphical, is formed multiple signal leads (6), and each described signal lead (6) one end is logical
Cross the fairlead (51) connection adding thermal resistance or a temperature element；
E growth of passivation layer (7), and it is graphical, aperture is formed at the other end of each signal lead (6) of correspondence
(71) expose signal lead (6) from the aperture (71)；
F, which corrodes to hotting mask silicon substrate (1) back side, to be exposed, and forms insulating chamber (11).
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| CN106768112A (en) * | 2016-12-30 | 2017-05-31 | 苏州容启传感器科技有限公司 | Thermal flow rate sensor and preparation method thereof and application |
| CN106895886B (en) * | 2017-04-13 | 2023-06-16 | 南京信息工程大学 | High-sensitivity gas flow measuring device and method based on giant piezoresistive sensor |
| CN110726443A (en) * | 2019-09-09 | 2020-01-24 | 浙江省北大信息技术高等研究院 | Medical flow sensor and medical flow detection system provided with same |
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| CN201199167Y (en) * | 2008-05-07 | 2009-02-25 | 哈尔滨市东北汽车电子工程技术研究开发中心 | Heat membrane type flow sensor chip |
| CN101344413A (en) * | 2008-08-25 | 2009-01-14 | 中国电子科技集团公司第四十九研究所 | Flat diaphragm type gas flow sensor and method of producing the same |
| CN101408442A (en) * | 2008-09-24 | 2009-04-15 | 北京时代蓝天光电技术有限公司 | Air mass flow sensor of silicone base thin-film structure |
| CN101852630A (en) * | 2009-03-24 | 2010-10-06 | 日立汽车系统株式会社 | Thermal flowmeter |
| CN102169097A (en) * | 2009-12-28 | 2011-08-31 | 日立汽车系统株式会社 | Thermal gas sensor |
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| CN106092234A (en) | 2016-11-09 |
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