CN106086821A - A kind of device of the plasma method depositional coating improving film layer purity - Google Patents
A kind of device of the plasma method depositional coating improving film layer purity Download PDFInfo
- Publication number
- CN106086821A CN106086821A CN201610719680.1A CN201610719680A CN106086821A CN 106086821 A CN106086821 A CN 106086821A CN 201610719680 A CN201610719680 A CN 201610719680A CN 106086821 A CN106086821 A CN 106086821A
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- CN
- China
- Prior art keywords
- reative cell
- extractor
- air
- film layer
- delivery system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
Abstract
The open a kind of film layer purity of the present invention is high, it is accurately controlled the device of the plasma method depositional coating of thicknesses of layers, include reative cell, air-extractor, gas delivery system and pulse microwave generator, air-extractor connects with reative cell with gas delivery system, the lower section of reative cell is located at by air-extractor, gas delivery system is located at above reative cell, the microwave that pulse microwave generator produces to reative cell supply, gas outlet below reative cell is provided with plasma ignition contact in the side of air-extractor, after using the technical program, compared with prior art, this low pressure plasma chemical gaseous phase deposition prepares the device of nano thin-film and has the advantage that 1) film layer purity height, without unnecessary useless reactant (i.e. pollutant), film layer adhesiveness is improved；2) thicknesses of layers controls accurately.
Description
Technical field:
The present invention relates to a kind of there is complex-curved outer surfaces of substrates prepare the device of nano-multilayer film, particularly one
Plant the device of the plasma method depositional coating that can improve film layer purity.
Background technology:
It is at present, general that have complex-curved glass pieces outer surface to prepare thin film manner be physical vacuum evaporation
(PVD).By SiO2, ZnS and TiO2Or Nb2O5Deng solid particulate matter by electron gun heating and gasifying, in vacuum cavity, it is placed with glass
Glass workpiece, the low-refraction SiO of gaseous state2, ZnS and high index of refraction Nb2O5Or TiO2Alternately it is attached to glass surface, by steaming
The amount of sending out controls thicknesses of layers and ultimately generates the thin film more than 30 layers.
In order to realize above-mentioned technique, prior art is all the method using low-voltage plasma chemical gaseous phase deposition, in complexity
The glass pieces outer surface of curved surface prepares nano-multilayer film, and the device of corresponding technique includes reative cell 01, air-extractor 02, gas
Body conveying system 03, pulse microwave generator 04 and auxiliary ignition device, air-extractor 02 and gas delivery system 03 and reaction
Room 01 connects, and pulse microwave generator 04 provides microwave, auxiliary ignition device to be used in combination with pulse microwave, instead to reative cell 01
Answering temperature requirement need not the highest, the ability that free electron obtains is the highest, after obtaining a tunic layer, will not be banged by Subsequent electronic
Walk, but the plasma ignition contact 05 in the auxiliary ignition device of device configuration at present is mounted in the air inlet on reative cell 01 top
End, arranging igniting in air inlet side is to have fatal shortcoming for microwave pulse plasma.Owing to reacting gas is on workpiece
Side mixes, and the area triggering above reative cell 01 is lighted reaction gas cognition and caused reacting between gas.Have one
Partial reaction gas has produced unnecessary reactant (such as dust) above workpiece, and this reactant also can be mixed in film layer,
Thus cause the film layer that muddiness occurs on workpiece.Additionally triggering ignition process can act on workpiece, reacting gas part is divided
Solve, thus constituted coating adhesion difference occurs and easily peels off.Additionally shortcoming is because when triggering igniting consuming uncertain deal
Reacting gas, so can not guarantee that thicknesses of layers is consistent with design thickness.
Summary of the invention:
In order to solve the problem that prior art exists, it is high that the present invention proposes a kind of film layer purity, is accurately controlled film layer
The device of the plasma method depositional coating of thickness.
The goal of the invention of the present invention can be realized by following technical scheme: a kind of grade improving film layer purity from
The device of sub-method depositional coating, includes reative cell, air-extractor, gas delivery system and pulse microwave generator, bleeds and set
For connecting with reative cell with gas delivery system, the lower section of reative cell is located at by air-extractor, and gas delivery system is located at reative cell
Top, the microwave that pulse microwave generator produces to reative cell supply, the gas outlet below reative cell is in the one of air-extractor
Side is provided with plasma ignition contact.
Plasma ignition contact is circular ignition coil.
After using the technical program, compared with prior art, this low pressure plasma chemical gaseous phase deposition prepares nanometer thin
The device of film has the advantage that
1) film layer purity is high, and without unnecessary useless reactant (i.e. pollutant), film layer adhesiveness is improved；
2) thicknesses of layers controls accurately.
Accompanying drawing illustrates:
Fig. 1 is the structure chart of the device of this prior art plasma method depositional coating；
Fig. 2 is the structure chart of the device of plasma method depositional coating of the present invention.
Detailed description of the invention:
Below in conjunction with the accompanying drawings this technology is described further.
The device of the plasma method depositional coating of the improved film layer purity of the present embodiment, includes reative cell 1, bleeding sets
For 2, gas delivery system 3 and pulse microwave generator 4, air-extractor 2 connects with reative cell 1 with gas delivery system 3, bleeds
Equipment 2 is located at the lower section of reative cell 1, and gas delivery system 3 is located at above reative cell 1, and it is different that gas delivery system 3 is provided with multichannel
The gas circuit of gas, can provide different gas by controlling switching gas circuit to reative cell 1, thus produce different film layers, arteries and veins
Rushing the microwave that microwave generator 4 produces to reative cell 1 supply, the gas outlet 11 below reative cell 1 is in the side of air-extractor 2
Being provided with plasma ignition contact 5, plasma ignition contact 5 is circular ignition coil.
This plasma method deposition film device is applied to bulb glass this SiO of Surface Creation2And TiO2Nano-multilayer film, one
As produce 40 multilamellars, every layer thickness according to design need set, the spectrum that bulb transmits can be controlled, can be according to client
Requirement to spectrum regulates thickness and the number of plies of control every layer, makes bulb transmit the light of required spectrum.
The above, be only presently preferred embodiments of the present invention, and the present invention not makees any pro forma restriction.Appoint
What those of ordinary skill in the art, without departing under technical solution of the present invention ambit, may utilize the skill of the disclosure above
Technical solution of the present invention is made many possible variations and modification by art content, or is revised as the Equivalent embodiments of equivalent variations.
Therefore every content without departing from technical solution of the present invention, the equivalence change made according to the shape of the present invention, structure and principle, all
Should be covered by protection scope of the present invention.
Claims (2)
1. a device for the plasma method depositional coating of film layer purity be can improve, reative cell, air-extractor, gas included defeated
Sending system and pulse microwave generator, air-extractor connects with reative cell with gas delivery system, and reative cell is located at by air-extractor
Lower section, gas delivery system is located at above reative cell, the microwave that pulse microwave generator produces to reative cell supply, its feature
It is: the gas outlet below reative cell is provided with plasma ignition contact in the side of air-extractor.
2. the device of the plasma method depositional coating that can improve film layer purity, it is characterised in that: plasma ignition contact is
Circular ignition coil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610719680.1A CN106086821A (en) | 2016-08-24 | 2016-08-24 | A kind of device of the plasma method depositional coating improving film layer purity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610719680.1A CN106086821A (en) | 2016-08-24 | 2016-08-24 | A kind of device of the plasma method depositional coating improving film layer purity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106086821A true CN106086821A (en) | 2016-11-09 |
Family
ID=57224998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610719680.1A Pending CN106086821A (en) | 2016-08-24 | 2016-08-24 | A kind of device of the plasma method depositional coating improving film layer purity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106086821A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1070535A (en) * | 1991-07-06 | 1993-03-31 | 肖特玻璃制造厂 | The method and the device of CVD-plasma lighted in triggering |
| CN1813342A (en) * | 2003-06-27 | 2006-08-02 | 东京毅力科创株式会社 | Method for generating plasma, method for cleaning and method for treating substrate |
| CN101521980A (en) * | 2008-02-26 | 2009-09-02 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
-
2016
- 2016-08-24 CN CN201610719680.1A patent/CN106086821A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1070535A (en) * | 1991-07-06 | 1993-03-31 | 肖特玻璃制造厂 | The method and the device of CVD-plasma lighted in triggering |
| CN1813342A (en) * | 2003-06-27 | 2006-08-02 | 东京毅力科创株式会社 | Method for generating plasma, method for cleaning and method for treating substrate |
| CN101521980A (en) * | 2008-02-26 | 2009-09-02 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161109 |