CN205275697U - Device based on low pressure plasma chemical vapor deposition prepares nano -multilayer film - Google Patents
Device based on low pressure plasma chemical vapor deposition prepares nano -multilayer film Download PDFInfo
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- CN205275697U CN205275697U CN201521123882.7U CN201521123882U CN205275697U CN 205275697 U CN205275697 U CN 205275697U CN 201521123882 U CN201521123882 U CN 201521123882U CN 205275697 U CN205275697 U CN 205275697U
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Abstract
The utility model provides a device based on low pressure plasma chemical vapor deposition prepares nano -multilayer film, include: a vacuous reaction chamber for placing the base member work piece, to continuously supply with the oxygen conveying system of oxygen in the reaction chamber, to supply with the gaseous gaseous conveying system of first gas and second in the reaction chamber alternately, produce the microwave and to provide in the reaction chamber the system takes place for the microwave of microwave, set up in the reaction chamber with between the microwave emergence system with thereby produce plasma field ionization in the reaction chamber various gases in the reaction chamber generate the microwave electron cyclotron resonance system of nanometer rete so that carry out chemical reaction between each gaseous different molecule. The utility model discloses a device can the every layer thickness of accurate control and the degree of consistency, increases rete and base member adhesion bond.
Description
Technical field
The utility model relates to and prepares nano-multilayer film having complex-curved substrate surface, specifically, it relates to a kind of device preparing nano-multilayer film based on low-voltage plasma chemical vapour deposition.
Background technology
At present, general have complex-curved glass pieces outside surface to prepare film process be that physical vacuum steams plating (PVD). By SiO2, ZnS and TiO2Or Nb2O5Deng solid particulate matter by electron beam gun heating and gasifying, it is placed with glass pieces in vacuum cavity, the low-refraction SiO of gaseous state2, ZnS and high refractive index Nb2O5Or TiO2Alternately it is attached to glass surface, by steam output controlling diaphragm layer thickness and finally generates the film more than 30 layers.
But, above-mentioned processing method Shortcomings part, the outer glass surface of glass pieces is not through activation, do not form fine and close cross-linked layer, not taking purifying process to make rete attachment degree inadequate, under high temperature, rete Stress non-homogeneity impact of being heated easily causes cracking, comes off. In addition, evaporating materials after gasification due to not through acceleration of ions and affect by complex-curved curvature so that the low-refraction that position, center, edge are adhered to and high refractive index two kinds of material receiving amounts are different, cause curved surface thickness inconsistent. Therefore, adopt above-mentioned processing method to decline to a great extent in infrared cut coating or the filter optical property such as ultraviolet film of the preparation of glass pieces surface, even lost efficacy.
In addition, also have at present and adopt the method for low-voltage plasma chemical vapour deposition to generate film in substrate surface deposition, make deposition substrate surface form multiple functional film, such as infrared cut coating, filter ultraviolet film etc. Such as, patent documentation 1 discloses a kind of plasma source and carrys out the method for deposit film coating with the chemical vapour deposition of plasma enhancing. Patent documentation 2 discloses for a kind of plasma enhanced chemical vapor deposition unit, comprising: the cavity possessing top inlet mouth; The top electrode being positioned under cavity inlet mouth; It is positioned at cavity bottom, with the lower electrode that top electrode is oppositely arranged; The device substrate being positioned on described lower electrode.
Prior art:
Patent documentation 1: the open CN105154856A of Chinese patent;
Patent documentation 2: the open CN101974738A of Chinese patent.
But, the nano-multilayer film adopting existing various technique to prepare, often exists that stress in thin film is uneven and the problem such as membrane thickness unevenness.
Practical novel content
In view of above Problems existing, technical problem to be solved in the utility model is to provide one can accurately control every layer thickness and uniformity coefficient, increases the device preparing nano-multilayer film based on low-voltage plasma chemical vapour deposition of rete and matrix bounding force.
In order to solve the problems of the technologies described above, the device preparing nano-multilayer film based on low-voltage plasma chemical vapour deposition that the utility model provides, comprising: for placing the reaction chamber of the vacuum of matrix workpiece; The oxygen delivery system of sustainable supply oxygen in described reaction chamber; The first gas and the gas delivery system of the 2nd gas alternately is supplied in described reaction chamber; Produce microwave and the microwave generation system of described microwave is provided in described reaction chamber; Be arranged between described reaction chamber and described microwave generation system to produce argon-arc plasma field in described reaction chamber thus the various gas ionizing in described reaction chamber so that carry out chemical reaction between each gas differing molecular and generate the microwave electron cyclotron resonance system of nano thick film.
According to the utility model, the frequency electromagnetic waves that microwave generation system produces is by microwave electron cyclotron resonance system, finally in the reaction chamber of vacuum, produce argon-arc plasma field, and ionize the gas not of the same race imported by gas distributing system, destroy the chemical bond of gas so that between differing molecular, carry out chemical reaction, generate nano thick film, alternating deposit is to matrix surface so that the film being deposited on matrix surface is evenly distributed. Further, the unbound electron bombardment matrix surface in energetic plasma, can add hot basal body simultaneously, make matrix surface sensitization, form fine and close cross-linked layer, thus be beneficial to coating growth deposition, substantially increase efficiency, save the time.
Thus, adopting device of the present utility model to prepare nano thin-film, the thickness of rete and stress equilibrium, consistence is very good; Reaction times is short, and material cost is low; Especially for having complex-curved workpiece, there is good film forming characteristics.
Again, in the utility model, it is also possible to be, described reaction chamber is provided with multiple, and described device also comprises the microwave energy evenly distribute after described microwave electron cyclotron resonance system to the tuner of multiple described reaction chamber.
According to the utility model, by arranging multiple reaction chamber and tuner, multiple matrix workpiece can be made to deposit simultaneously.
Again, in the utility model, it is also possible to be, described tuner comprises three pin tuners.
According to the utility model, three pin tuners are that three pins by being fixed on waveguide carry out regulable control microwave reflection power.
Again, in the utility model, it is also possible to be, also comprising the vacuum-pumping system for being vacuumized by described reaction chamber, described vacuum-pumping system comprises vacuum pump and connects the bonding in vacuum pipeline of described vacuum pump and described reaction chamber.
According to the utility model, by vacuum-pumping system, reaction chamber is vacuumized.
Again, in the utility model, it is also possible to be, described first gas comprises TiCl4Gas, gaseous state five oxygen two tantalum (Ta2O5), gaseous state zirconium dioxide (ZrO2) or gaseous state Niobium Pentxoxide (Nb2O5); Described 2nd gas comprises hexamethyldisiloxane gas, SiH4Gas or SiF4Gas.
According to the utility model, with TiCl in this example4Gas and hexamethyldisiloxane gas are that example is described, but the utility model is not limited to this, it is possible to adopt other gas generation nano thin-films. Such as, containing the gaseous matter of Si component element and Ti component element, select according to the different demands of product, and the proportioning of material can be changed as required, generate nanometer rete of not congenerous, there is very big suitability.
Again, in the utility model, can also be, described gas delivery system comprises the first gas delivery system for supplying the first gas and the 2nd gas delivery system for supplying the 2nd gas, and described first gas delivery system is connected with described reaction chamber by control valve respectively with the 2nd gas delivery system.
According to the utility model, alternately run the first gas delivery system and the 2nd gas delivery system, thus the first gas and the 2nd gas alternately can be supplied to reaction chamber.
Again, in the utility model, it is also possible to be, the protection gas delivery system for supply protection gas in described reaction chamber is also comprised.
According to the utility model, when needs are shut down, in reaction chamber, inject protection gas by protection gas delivery system, internal mix gas is discharged, avoids mixed gas to reach the stagnation point of blast, ensure production safety.
According to following embodiment and with reference to accompanying drawing, foregoing of the present utility model and other objects, features and advantages will be understood better.
Accompanying drawing explanation
Fig. 1 shows the structural representation of the device preparing nano-multilayer film based on low-voltage plasma chemical vapour deposition according to the utility model one example;
Fig. 2 is the vertical view of Fig. 1 shown device;
Fig. 3 is the left view of Fig. 1 shown device.
Reference numeral:
1, reaction chamber; 2, vacuum pump; 3, TiCl4Gas delivery system; 4, hexamethyldisiloxane gas delivery system; 5, oxygen delivery system; 6, microwave generation system; 7, control valve; 8, ECR microwave electron cyclotron resonance device; 9, three pin tuner; 10, nitrogen delivery system; 11, bonding in vacuum pipeline; 12, vacuum detecting and control device.
Embodiment
Below in conjunction with accompanying drawing and following enforcement mode bright the utility model furtherly, it should be understood that accompanying drawing and following enforcement mode are only for illustration of the utility model, and unrestricted the utility model.
For the existing all weak points existed in the technique having complex-curved substrate surface and preparing nano-multilayer film, the utility model provides a kind of device preparing nano-multilayer film based on low-voltage plasma chemical vapour deposition. This device comprises: for placing the reaction chamber of the vacuum of matrix workpiece; The oxygen delivery system of sustainable supply oxygen in described reaction chamber; The first gas and the gas delivery system of the 2nd gas alternately is supplied in described reaction chamber; Produce microwave and the microwave generation system of described microwave is provided in described reaction chamber; Be arranged between described reaction chamber and described microwave generation system to produce argon-arc plasma field in described reaction chamber thus the various gas ionizing in described reaction chamber so that carry out chemical reaction between each gas differing molecular and generate the microwave electron cyclotron resonance system of nano thick film.
Adopt the utility model, the frequency electromagnetic waves that microwave generation system produces is by ECR microwave electron cyclotron resonance system, finally in the reaction chamber of vacuum, produce argon-arc plasma field, and ionize the gas not of the same race imported by gas distributing system, destroy the chemical bond of gas so that between differing molecular, carry out chemical reaction, generate nano thick film, alternating deposit is to matrix surface so that the film being deposited on matrix surface is evenly distributed. Unbound electron bombardment matrix surface in energetic plasma, can add hot basal body simultaneously, make matrix surface sensitization, form fine and close cross-linked layer, thus be beneficial to coating growth deposition, substantially increase efficiency, save the time.
Specifically, Fig. 1 shows the structural representation of the device preparing nano-multilayer film based on low-voltage plasma chemical vapour deposition according to the utility model one example; Fig. 2 is the vertical view of Fig. 1 shown device; Fig. 3 is the left view of Fig. 1 shown device.
As shown in Figure 1 to Figure 3, the device preparing nano-multilayer film based on low-voltage plasma chemical vapour deposition in this example comprises the reaction chamber 1 of the vacuum for placing matrix workpiece. In this example, can comprising the vacuum-pumping system for being vacuumized by reaction chamber 1, this vacuum-pumping system can comprise vacuum pump 2 and connect the bonding in vacuum pipeline 11 of vacuum pump 2 with reaction chamber 1. After placing matrix workpiece in reaction chamber 1, by this vacuum-pumping system, reaction chamber 1 is vacuumized, make to be in high vacuum state in this reaction chamber 1. Now, it is possible to by vacuum detecting and control device 12, maintaining vacuum chamber and remain on such as about 0.1 0.5mbar, vacuum detecting meter feedback actual measurement vacuum values is in upper PLC control system simultaneously. In addition, this bonding in vacuum pipeline 11 can be provided with control valve 7, thus this vacuum-pumping system is connected with reaction chamber 1 by control valve 7.
The matrix workpiece applied in this example can be glass pieces, especially can be have complex-curved glass pieces, and the utility model can also be used for other body materials simultaneously, such as Si sheet or metallic surface.
As shown in Figure 2, this device also comprises the oxygen delivery system 5 of sustainable supply oxygen in reaction chamber 1. This oxygen delivery system 5 is connected with above-mentioned reaction chamber 1 by control valve 7. After being vacuumized by reaction chamber 1 by above-mentioned vacuum-pumping system, in reaction chamber 1, inject oxygen by oxygen delivery system 5.
In addition, this device also comprises the gas delivery system alternately supplying the first gas and the 2nd gas in reaction chamber 1. In this example, the first gas can be TiCl4Gas; 2nd gas can be hexamethyldisiloxane gas. But the utility model is not limited to this, it is possible to change the proportioning of material as required, generates nanometer rete of not congenerous, there is very big suitability. Such as generate nanometer film layer as the first and second gases, gaseous state five oxygen two tantalum (Ta can also be selected simultaneously2O5), gaseous state zirconium dioxide (ZrO2), gaseous state Niobium Pentxoxide (Nb2O5) as the first gas; Select SiH4��SiF4Nanometer film layer is generated as the 2nd gas.
Again, as shown in Figure 2, above-mentioned gas delivery system comprises (the i.e. TiCl in this example of the first gas delivery system for supplying the first gas4Gas delivery system 3) and the 2nd gas delivery system (i.e. hexamethyldisiloxane gas delivery system 4 in this example) for supplying the 2nd gas. In addition, this TiCl4Gas delivery system 3 also can be connected with reaction chamber 1 by control valve 7 respectively with hexamethyldisiloxane gas delivery system 4.
Also as shown in Figure 1 to Figure 3, this device also comprises and produces microwave and provide the microwave generation system 6 of microwave produced and the microwave electron cyclotron resonance system 8 being arranged between reaction chamber 1 and microwave generation system 6 in reaction chamber 1. Argon-arc plasma field can be produced in reaction chamber 1 by this microwave electron cyclotron resonance system 8 thus various gas in ionization reaction chamber 1 so that carry out chemical reaction and generate nano thick film between each gas differing molecular. Namely, under the effect of argon-arc plasma field chemical vapour deposition is started, nanometer coating growth.
Specifically, after injecting oxygen by oxygen delivery system 5 in reaction chamber 1, open microwave generation system (i.e. microwave source) 6, the microwave produced is after microwave electron cyclotron resonance system 8, ionized oxygen molecule is provided in reaction chamber 1, thus matrix is carried out surface activation process to form fine and close cross-linked layer, and carry out purifying process.
Further, keep the supply of oxygen, pass through TiCl4Gas delivery system 3 is by TiCl4Gas ceaselessly injects in reaction chamber 1 continuously, ionized oxygen molecule and TiCl4, Ti-Cl and O-O chemical bond is interrupted, and produces plasma body at matrix surface, Ti-O chemical bonds, and Ti ion and oxonium ion namely, in plasma body synthesize TiO at matrix surface2, form TiO2Film. After processing parameter is fixing, rate of film build is constant, controls TiO by the control reaction times2Film thickness, the by product being obtained by reacting and unnecessary oxygen and TiCl4It is discharged.
Subsequently, TiCl is stopped4The supply of gas, supplies hexamethyldisiloxane gas, ionized oxygen molecule and hexamethyldisiloxane, Si-CH continuously instead by hexamethyldisiloxane gas delivery system 4 in reaction chamber 13Being interrupted with O-O chemical bond, produce plasma body at matrix surface, Si-O chemical bonds, silicon ion and oxonium ion namely, in plasma body are combined into SiO at matrix surface2, form SiO2Film. After processing parameter is fixing, rate of film build is constant, controls SiO by the control reaction times2Film thickness, the by product being obtained by reacting and unnecessary oxygen and hexamethyldisiloxane are discharged.
Alternately run TiCl4Gas delivery system 3 and hexamethyldisiloxane gas delivery system 4, thus can by TiCl4Gas and hexamethyldisiloxane gas alternately are supplied to reaction chamber 1, successively at matrix surface alternating deposit multilayer TiO2And SiO2Film. After question response completes, can closing above-mentioned each control valve 7, microwave generation system 6 is standby, and multi-layer nano rete process of growth terminates.
In addition, above-mentioned reaction chamber 1 can be provided with multiple, and for this reason, this device also comprises the microwave energy evenly distribute after microwave electron cyclotron resonance system 8 to the tuner of multiple reaction chamber 1. This tuner can be three pin tuner 9, three pin tuners shown in Fig. 1 is that three pins by being fixed on waveguide carry out regulable control microwave reflection power.
In addition, also as shown in Figure 2, this device also can comprise the protection gas delivery system for supply protection gas in reaction chamber 1. When needs are shut down, in reaction chamber 1, inject protection gas by protection gas delivery system, internal mix gas is discharged, avoids mixed gas to reach the stagnation point of blast, ensure production safety. This protection gas can be the rare gas elementes such as nitrogen or argon gas etc.
Compared with prior art, the device of the obtained nano thin-film of this low-voltage plasma body chemical vapor phase growing is adopted to have the following advantages:
1) thickness of rete and stress equilibrium, consistence is very good;
2) reaction times is short, and material cost is low;
3) proportioning of material can be changed as required, generate nanometer rete of not congenerous, there is very big suitability;
4) especially for having complex-curved workpiece, there is good film forming characteristics.
Below in conjunction with accompanying drawing, preferred embodiment of the present utility model is described further, with at matrix surface alternating deposit multilayer TiO in the present embodiment2And SiO2Film is that example is described in detail.
Specifically, in the present embodiment, the device of production nano-multilayer film includes multiple reaction chamber 1, vacuum pump 2, TiCl4Gas delivery system 3, hexamethyldisiloxane gas delivery system 4, oxygen delivery system 5 and microwave generation system 6, vacuum pump 2, TiCl4Gas delivery system 3, hexamethyldisiloxane gas delivery system 4 can be connected with reaction chamber 1 by control valve 7 respectively respectively with oxygen delivery system 5, ECR microwave electron cyclotron resonance device 8 and three pin tuners 9 it are provided with between microwave generation system 6 and reaction chamber 1, after microwave generation system 6 produces microwave, microwave is after ECR microwave electron cyclotron resonance device 8 and three pin tuners 9, and microwave energy evenly is transported in each reaction chamber 1. In order to ensure safety in production, this device has also set up nitrogen delivery system 10, when needs are shut down, it is necessary to nitrogen injection in reaction chamber, internal mix gas is discharged, avoids mixed gas to reach the stagnation point of blast, ensure production safety.
Adopting the device preparing nano-multilayer film based on low-voltage plasma chemical vapour deposition of the present embodiment such as can perform following method, concrete steps are as follows:
A. placing matrix workpiece in multiple reaction chamber 1, vacuumized by reaction chamber 1, make reaction chamber 1 inner height vacuum, vacuum tightness reaches 0.1 0.5mbar;
B. vacuumize in backward reaction chamber 1 and inject oxygen, open microwave source (i.e. microwave generation system) 6, microwave is after ECR microwave electron cyclotron resonance system 8, three pin tuner 9, microwave energy is evenly distributed in each reaction chamber 1, play brightness ionized oxygen molecule, energetic oxygen ions is clashed into matrix surface and is added hot basal body, and matrix is carried out surface activation process and purifying process by oxonium ion;
C. the supply of oxygen is kept, by TiCl4Gas ceaselessly injects in reaction chamber 1 continuously, ionized oxygen molecule and TiCl4, producing plasma body at matrix surface, Ti ion and oxonium ion in plasma body synthesize TiO at matrix surface2, form TiO2Film, the control reaction times controls TiO2Film thickness, the by product being obtained by reacting and unnecessary oxygen and TiCl4It is discharged;
D. TiCl is stopped4The supply of gas, changes into and supplies hexamethyldisiloxane gas in reaction chamber 1 continuously, and ionized oxygen molecule and hexamethyldisiloxane, produce plasma body at matrix surface, and silicon ion and oxonium ion in plasma body are combined into SiO at matrix surface2, form SiO2Film, the control reaction times controls SiO2Film thickness, the by product being obtained by reacting and unnecessary oxygen and hexamethyldisiloxane are discharged;
E. c and Step d is repeated, so that it may with at matrix surface alternating deposit multilayer TiO2And SiO2Film.
More specifically, in the present embodiment, microwave generation system 6 produces the frequency electromagnetic waves of such as 2.45GHz by after ECR microwave electron cyclotron resonance system 8, microwave is carried to reaction chamber 1, first it is full of oxygen in reaction chamber 1, ionized oxygen molecule, obtain the plasma body of oxygen, unbound electron bombardment matrix surface in the energetic plasma of oxygen, can add hot basal body simultaneously, make matrix surface sensitization, form fine and close cross-linked layer, thus it is beneficial to coating growth deposition, substantially increase efficiency, save the time.
Then, when keeping oxygen supply and microwave to supply to reaction chamber 1, adjusting control valve 7, adds TiCl in reaction chamber 14Gas, now microwave ionized oxygen molecule and TiCl simultaneously4Molecule, destroys oxygen molecule and TiCl4The chemical bond of molecule, obtains plasma body so that re-start chemical reaction between Ti ion and oxonium ion, generates nano level TiO2Rete.
Then closed control valve 7, stop TiCl4The supply of gas, changes supply hexamethyldisiloxane gas into, and ionized oxygen molecule and hexamethyldisiloxane molecule, obtain plasma body, and now Si ion is combined with oxonium ion and obtains SiO2Rete, so alternately repeats TiCl4The supply of gas and hexamethyldisiloxane gas just can at matrix surface alternating deposit multilayer TiO2Rete and SiO2Rete.
This device has very high SiO2And TiO2The sedimentation effect of these two kinds of materials and homogeneity, exclusive ECR microwave electron cyclotron resonance system, have plasma density height, electric discharge air pressure low, without interior electrode discharge, energy conversion rate height, feature that degree of ionization is high, clean the activation with glass surface by the plasma of oxygen before plated film or argon gas simultaneously, film adhesion is improved greatly, it is possible to solve the problem that rete easily comes off. Special gas containing Si+ and Ti+ in reaction chamber 1 under the effect of microwave energy, generate plasma body and and oxonium ion carry out the chemical reaction between differing molecular and regenerate novel substance SiO2And TiO2If there is multiple reaction chamber 1 to produce simultaneously, the energy distribution of each reaction chamber 1 is even, and the thicknesses of layers of deposition is consistent, and qualification rate improves greatly.
Industrial application
Such as apply this device at bulb glass this SiO of Surface Creation2And TiO2Nano-multilayer film, general produce 40 multilayers, the spectrum that bulb transmits can be controlled, it is possible to according to client, the requirement of spectrum is come thickness and the number of plies of regulable control every layer, make bulb transmit the light of required spectrum.
The above is only better embodiment of the present utility model, and the utility model is not done any restriction in form. Any those of ordinary skill in the art, do not departing from technical solutions of the utility model scope situation, all can utilize the technology contents of above-mentioned announcement that technical solutions of the utility model are made many possible variations and modification, or be revised as the equivalent embodiment of equivalent variations. Therefore every content not departing from technical solutions of the utility model, the equivalence change done according to the shape of the utility model, structure and principle, all should be covered by protection domain of the present utility model.
Claims (7)
1. prepare the device of nano-multilayer film based on low-voltage plasma chemical vapour deposition for one kind, it is characterised in that, comprising:
For placing the reaction chamber of the vacuum of matrix workpiece;
The oxygen delivery system of sustainable supply oxygen in described reaction chamber;
The first gas and the gas delivery system of the 2nd gas alternately is supplied in described reaction chamber;
Produce microwave and the microwave generation system of described microwave is provided in described reaction chamber;
Be arranged between described reaction chamber and described microwave generation system to produce argon-arc plasma field in described reaction chamber thus the various gas ionizing in described reaction chamber so that carry out chemical reaction between each gas differing molecular and generate the microwave electron cyclotron resonance system of nano thick film.
2. device according to claim 1, it is characterised in that, described reaction chamber is provided with multiple, and described device also comprises the microwave energy evenly distribute after described microwave electron cyclotron resonance system to the tuner of multiple described reaction chamber.
3. device according to claim 2, it is characterised in that, described tuner comprises three pin tuners.
4. device according to claim 1, it is characterised in that, also comprise the vacuum-pumping system for being vacuumized by described reaction chamber, described vacuum-pumping system comprises vacuum pump and connects the bonding in vacuum pipeline of described vacuum pump and described reaction chamber.
5. device according to claim 1, it is characterised in that, described first gas comprises TiCl4Gas, gaseous state five oxygen two tantalum, gaseous state zirconium dioxide or gaseous state Niobium Pentxoxide; Described 2nd gas comprises hexamethyldisiloxane gas, SiH4Gas or SiF4Gas.
6. device according to claim 1, it is characterized in that, described gas delivery system comprises the first gas delivery system for supplying the first gas and the 2nd gas delivery system for supplying the 2nd gas, and described first gas delivery system is connected with described reaction chamber by control valve respectively with the 2nd gas delivery system.
7. device according to any one of claim 1 to 6, it is characterised in that, also comprise the protection gas delivery system for supply protection gas in described reaction chamber.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105420683A (en) * | 2015-12-31 | 2016-03-23 | 佛山市思博睿科技有限公司 | Device for preparing nano-multilayer film on basis of low-pressure plasma chemical vapour deposition |
| TWI661076B (en) * | 2016-10-06 | 2019-06-01 | 南韓商圓益Ｉｐｓ股份有限公司 | Method of manufacturing composite layer |
| CN110055378A (en) * | 2019-05-17 | 2019-07-26 | 张家港艺新金属材料有限公司 | The tempering process of saw blade |
-
2015
- 2015-12-31 CN CN201521123882.7U patent/CN205275697U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105420683A (en) * | 2015-12-31 | 2016-03-23 | 佛山市思博睿科技有限公司 | Device for preparing nano-multilayer film on basis of low-pressure plasma chemical vapour deposition |
| TWI661076B (en) * | 2016-10-06 | 2019-06-01 | 南韓商圓益Ｉｐｓ股份有限公司 | Method of manufacturing composite layer |
| CN110055378A (en) * | 2019-05-17 | 2019-07-26 | 张家港艺新金属材料有限公司 | The tempering process of saw blade |
| CN110055378B (en) * | 2019-05-17 | 2023-04-21 | 东台艺新金属材料有限公司 | Tempering process of saw blade |
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