CN106083054A - The surface modifying method of recrystallization silicon carbide micro-powder - Google Patents
The surface modifying method of recrystallization silicon carbide micro-powder Download PDFInfo
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- CN106083054A CN106083054A CN201610392565.8A CN201610392565A CN106083054A CN 106083054 A CN106083054 A CN 106083054A CN 201610392565 A CN201610392565 A CN 201610392565A CN 106083054 A CN106083054 A CN 106083054A
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- Prior art keywords
- silicon carbide
- powder
- recrystallization
- carbide micro
- surface modifying
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 87
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 239000000843 powder Substances 0.000 title claims abstract description 47
- 238000001953 recrystallisation Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000000227 grinding Methods 0.000 claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000203 mixture Substances 0.000 claims abstract description 19
- 239000008367 deionised water Substances 0.000 claims abstract description 18
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 14
- 238000002156 mixing Methods 0.000 claims abstract description 12
- 239000003607 modifier Substances 0.000 claims abstract description 10
- 238000003756 stirring Methods 0.000 claims abstract description 6
- 238000001035 drying Methods 0.000 claims abstract description 5
- 239000002270 dispersing agent Substances 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000003763 carbonization Methods 0.000 claims 1
- 239000011863 silicon-based powder Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000009740 moulding (composite fabrication) Methods 0.000 abstract description 3
- 238000007569 slipcasting Methods 0.000 abstract description 3
- 239000007787 solid Substances 0.000 abstract description 3
- 238000012986 modification Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012216 screening Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 102100033538 Clusterin-associated protein 1 Human genes 0.000 description 1
- 101000945057 Danio rerio Clusterin-associated protein 1 homolog Proteins 0.000 description 1
- 101000945060 Homo sapiens Clusterin-associated protein 1 Proteins 0.000 description 1
- 150000001414 amino alcohols Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/6261—Milling
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention discloses the surface modifying method of a kind of recrystallization silicon carbide micro-powder, belong to carborundum production technical field.Solving prior art cost height, production cycle length, labor intensity greatly, products obtained therefrom solid content when preparing recrystallization carborundum mud is relatively low, it is impossible to for the problem of the technological formings such as slip casting.It comprises the following steps: the deionized water that mixed modifier and electrical conductivity are 30 50 μ s/cm is added mix and blend 20 50 minutes in agitator；Take silicon carbide micro-powder and add agitator, stirring mixing 20 50 minutes；Take silicon carbide grinding media and add agitator, mix and blend 55 60 hours；The material being stirred is sieved, screens out silicon carbide grinding media；By screen out silicon carbide grinding media drying materials, broken after cross 300 500 mesh sieves and i.e. obtain modified recrystallization silicon carbide micro-powder.The present invention can be used for recrystallization silicon carbide micro-powder is carried out surface modification.
Description
Technical field
The present invention relates to the surface modifying method of a kind of recrystallization silicon carbide micro-powder, belong to carborundum production technology neck
Territory.
Background technology
Silicon carbide ceramics has that elevated temperature strength is big, non-oxidizability is strong, mar proof is good, heat stability is good, thermal coefficient of expansion
Little, thermal conductivity is big, hardness is high and the good characteristic such as resistance to chemical attack.Therefore, exhibit one's skill to the full in many fields, and day by day
It is subject to people's attention.For silicon carbide ceramics, preparing uniform and stable scattered powder body is the key successfully sintered.But, by
, surface little in silicon carbide micro-powder particle diameter can high, easily cause reunion, forms offspring, makes the advantage of superfine powder be difficult to play,
The final excellent properties affecting finished product.
The method of modifying of existing recrystallization silicon carbide micro-powder includes wet method and dry method, the most wet-process modified there is energy consumption
Greatly, particle dispersion bad, the shortcomings such as production cycle length, labor intensity are big, product stability is poor, and products obtained therefrom preparation
During recrystallization carborundum mud, solid content is relatively low, it is impossible to for technological formings such as slip castings.
Summary of the invention
It is an object of the invention to provide the surface modifying method of a kind of recrystallization silicon carbide micro-powder, technique is simple, raw
Produce low cost, products obtained therefrom stable performance.
The surface modifying method of described recrystallization silicon carbide micro-powder, comprises the following steps:
(1) deionized water that mixed modifier and electrical conductivity are 30-50 μ s/cm is added mix and blend 20-in agitator
50 minutes；
(2) take silicon carbide micro-powder and add agitator, stirring mixing 20-50 minute；
(3) take silicon carbide grinding media and add agitator, mix and blend 55-60 hour；
(4) material being stirred is sieved, screen out silicon carbide grinding media；
(5) by screen out silicon carbide grinding media drying materials, broken after cross 300-500 mesh sieve and i.e. obtain modified recrystallization and use
Silicon carbide micro-powder.
Mixed modifier described in step (1) is by dispersant MQ-568, dispersant DOLAPIX CE 64 and dispersant
PRODUKT KV 5088 mixes according to the mass ratio of 2-5:1-3:1-2.
Mixed modifier and the mass ratio of deionized water described in step (1) are 0.5-5:80-100.
Silicon carbide micro-powder D50 value described in step (2) is 1.8-3.4 μm, and specific surface area is 5-7m2/ g, carborundum content
Not less than 98.5%.
Silicon carbide micro-powder and the mass ratio of deionized water described in step (2) are 0.5-1:1-2.
Silicon carbide grinding media particle diameter described in step (3) is 3-5mm, and carborundum content is not less than 99%.
Silicon carbide grinding media and the mass ratio of deionized water described in step (3) are 0.1-0.5:1.
Drying temperature described in step (5) is 60-80 DEG C.
Modified recrystallization silicon carbide micro-powder water content described in step (5) is 0.5-1%.
Compared with prior art the invention has the beneficial effects as follows:
The present invention uses that multiple modifying agent is compounding to carry out wet-process modified to silicon carbide micro-powder, and technique is simple to operation, produces
Cycle is short, greatly reduces production cost, through modified silicon carbide micro-powder, when preparing recrystallization with carborundum mud, Gu
Content, up to more than 86%, is suitable for the technological formings such as slip casting, and the recrystallized silicon carbide product volume density after sintering is at 2.7g/
cm3Above, the present invention efficiently solves solid content problem during silicon carbide micro-powder configuration slip, substantially increases silicon carbide micro-powder
Added value.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention will be further described.
Embodiment 1
The surface modifying method of described recrystallization silicon carbide micro-powder, comprises the following steps:
(1) will be by dispersant MQ-568, dispersant DOLAPIX CE 64 and dispersant PRODUKT KV 5088 according to 2:
Mixed modifier and the deionized water that electrical conductivity is 30 μ s/cm that the mass ratio of 1:1 mixes add with the mass ratio of 0.5:80
Enter mix and blend 20 minutes in agitator；
(2) taking D50 value is 1.8 μm, and specific surface area is 5m2/ g, the carborundum content silicon carbide micro-powder not less than 98.5%
Adding agitator, stirring mixing 20 minutes, wherein the mass ratio of silicon carbide micro-powder and deionized water is 0.5:1；
(3) taking particle diameter is 3mm, and the carborundum content silicon carbide grinding media not less than 99% adds agitator, and mixing is stirred
Mixing 55 hours, wherein the mass ratio of silicon carbide grinding media and deionized water is 0.1:1；
(4) material being stirred is sieved, screen out silicon carbide grinding media；
(5) material screening out silicon carbide grinding media is dried under the conditions of 60 DEG C, broken after cross 500 mesh sieves and i.e. obtain aqueous
Amount is the modified recrystallization silicon carbide micro-powder of 0.5%.
Wherein, dispersant MQ-568, modified high-molecular Ionomer, buy in Wuhan U.S. fine jade limited public affairs of woods new material
Department；
Dispersant DOLAPIX CE 64, carboxylic acid preparation, buy in Wuhan Mei Qilin new material company limited；
Dispersant PRODUKT KV 5088, amino alcohol, buy in Si Mahuagong (Foshan) company limited.
Embodiment 2
The surface modifying method of described recrystallization silicon carbide micro-powder, comprises the following steps:
(1) will be by dispersant MQ-568, dispersant DOLAPIX CE 64 and dispersant PRODUKT KV 5088 according to 5:
Mixed modifier and the deionized water that electrical conductivity is 50 μ s/cm that the mass ratio of 3:2 mixes add with the mass ratio of 5:100
Mix and blend 20-50 minute in agitator；
(2) taking D50 value is 3.4 μm, and specific surface area is 7m2/ g, the carborundum content silicon carbide micro-powder not less than 98.5%
Adding agitator, stirring mixing 50 minutes, wherein the mass ratio of silicon carbide micro-powder and deionized water is 1:2；
(3) taking particle diameter is 5mm, and the carborundum content silicon carbide grinding media not less than 99% adds agitator, and mixing is stirred
Mixing 60 hours, wherein the mass ratio of silicon carbide grinding media and deionized water is 0.5:1；
(4) material being stirred is sieved, screen out silicon carbide grinding media；
(5) material screening out silicon carbide grinding media is dried under the conditions of 80 DEG C, broken after cross 300 mesh sieves and i.e. obtain aqueous
Amount is the modified recrystallization silicon carbide micro-powder of 1%.
Embodiment 3
The surface modifying method of described recrystallization silicon carbide micro-powder, comprises the following steps:
(1) will be by dispersant MQ-568, dispersant DOLAPIX CE 64 and dispersant PRODUKT KV 5088 according to 3:
Mixed modifier and the deionized water that electrical conductivity is 40 μ s/cm that the mass ratio of 2:1 mixes add with the mass ratio of 1:50
Mix and blend 30 minutes in agitator；
(2) taking D50 value is 2.5 μm, and specific surface area is 6m2/ g, the carborundum content silicon carbide micro-powder not less than 98.5%
Adding agitator, stirring mixing 30 minutes, wherein the mass ratio of silicon carbide micro-powder and deionized water is 1:1；
(3) taking particle diameter is 4mm, and the carborundum content silicon carbide grinding media not less than 99% adds agitator, and mixing is stirred
Mixing 50 hours, wherein the mass ratio of silicon carbide grinding media and deionized water is 0.3:1；
(4) material being stirred is sieved, screen out silicon carbide grinding media；
(5) material screening out silicon carbide grinding media is dried under the conditions of 70 DEG C, broken after cross 400 mesh sieves and i.e. obtain aqueous
Amount is the modified recrystallization silicon carbide micro-powder of 0.8%.
Claims (9)
1. the surface modifying method of a recrystallization silicon carbide micro-powder, it is characterised in that comprise the following steps:
(1) deionized water that mixed modifier and electrical conductivity are 30-50 μ s/cm is added mix and blend 20-50 in agitator to divide
Clock；
(2) take silicon carbide micro-powder and add agitator, stirring mixing 20-50 minute；
(3) take silicon carbide grinding media and add agitator, mix and blend 55-60 hour；
(4) material being stirred is sieved, screen out silicon carbide grinding media；
(5) by screen out silicon carbide grinding media drying materials, broken after cross 300-500 mesh sieve and i.e. obtain modified recrystallization carbonization
Silicon powder.
The surface modifying method of recrystallization silicon carbide micro-powder the most according to claim 1, it is characterised in that: step (1)
Described mixed modifier be by dispersant MQ-568, dispersant DOLAPIX CE 64 and dispersant PRODUKT KV 5088 by
Mix according to the mass ratio of 2-5:1-3:1-2.
The surface modifying method of recrystallization silicon carbide micro-powder the most according to claim 2, it is characterised in that: step (1)
Described mixed modifier and the mass ratio of deionized water are 0.5-5:80-100.
The surface modifying method of recrystallization silicon carbide micro-powder the most according to claim 3, it is characterised in that: step (2)
Described silicon carbide micro-powder D50 value is 1.8-3.4 μm, and specific surface area is 5-7m2/ g, carborundum content is not less than 98.5%.
The surface modifying method of recrystallization silicon carbide micro-powder the most according to claim 4, it is characterised in that: step (2)
Described silicon carbide micro-powder and the mass ratio of deionized water are 0.5-1:1-2.
The surface modifying method of recrystallization silicon carbide micro-powder the most according to claim 5, it is characterised in that: step (3)
Described silicon carbide grinding media particle diameter is 3-5mm, and carborundum content is not less than 99%.
The surface modifying method of recrystallization silicon carbide micro-powder the most according to claim 6, it is characterised in that: step (3)
Described silicon carbide grinding media and the mass ratio of deionized water are 0.1-0.5:1.
The surface modifying method of recrystallization silicon carbide micro-powder the most according to claim 7, it is characterised in that: step (5)
Described drying temperature is 60-80 DEG C.
The surface modifying method of recrystallization silicon carbide micro-powder the most according to claim 8, it is characterised in that: step (5)
Described modified recrystallization silicon carbide micro-powder water content is 0.5-1%.
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| CN201610392565.8A CN106083054B (en) | 2016-06-02 | 2016-06-02 | The recrystallization surface modifying method of silicon carbide micro-powder |
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| CN106083054B CN106083054B (en) | 2018-11-16 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106927464A (en) * | 2017-03-25 | 2017-07-07 | 郑州嘉晨化工科技有限公司 | A kind of method of modifying of silicon carbide micro-powder |
| CN107663089A (en) * | 2017-08-23 | 2018-02-06 | 沈阳长信碳化硅微粉有限公司 | A kind of surface modifying method of the silicon carbide micro-powder of fine ceramics product |
| CN113546729A (en) * | 2021-08-28 | 2021-10-26 | 潍坊凯华碳化硅微粉有限公司 | Silicon carbide micro powder grinding device and using method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103482627A (en) * | 2013-09-03 | 2014-01-01 | 大连长信碳化硅微粉有限公司 | Production method of silicon carbide micro powder for recrystallization |
-
2016
- 2016-06-02 CN CN201610392565.8A patent/CN106083054B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103482627A (en) * | 2013-09-03 | 2014-01-01 | 大连长信碳化硅微粉有限公司 | Production method of silicon carbide micro powder for recrystallization |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106927464A (en) * | 2017-03-25 | 2017-07-07 | 郑州嘉晨化工科技有限公司 | A kind of method of modifying of silicon carbide micro-powder |
| CN106927464B (en) * | 2017-03-25 | 2019-01-01 | 郑州嘉晨化工科技有限公司 | A kind of method of modifying of silicon carbide micro-powder |
| CN107663089A (en) * | 2017-08-23 | 2018-02-06 | 沈阳长信碳化硅微粉有限公司 | A kind of surface modifying method of the silicon carbide micro-powder of fine ceramics product |
| CN113546729A (en) * | 2021-08-28 | 2021-10-26 | 潍坊凯华碳化硅微粉有限公司 | Silicon carbide micro powder grinding device and using method thereof |
| CN113546729B (en) * | 2021-08-28 | 2023-11-28 | 潍坊凯华碳化硅微粉有限公司 | Silicon carbide micro powder grinding device |
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| CN106083054B (en) | 2018-11-16 |
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Address after: 276700 Hou Gao Hu Village, Linshu Town, Linshu County, Linyi, Shandong Patentee after: Yamada New Material Group Co.,Ltd. Patentee after: SHANDONG SHANTIAN NEW MATERIAL SCIENTIFIC RESEARCH Co.,Ltd. Address before: 276700 Hou Gao Hu Village, Linshu Town, Linshu County, Linyi, Shandong Patentee before: SHANTIAN ABRASIVE CO.,LTD. Patentee before: SHANDONG SHANTIAN NEW MATERIAL SCIENTIFIC RESEARCH Co.,Ltd. |
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Denomination of invention: Surface modification method of silicon carbide powder for recrystallization Effective date of registration: 20220111 Granted publication date: 20181116 Pledgee: Shandong Linshu Rural Commercial Bank Co.,Ltd. Pledgor: Yamada New Material Group Co.,Ltd. Registration number: Y2022980000330 |
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Denomination of invention: Surface modification method of silicon carbide micro powder for recrystallization Granted publication date: 20181116 Pledgee: Weihai Commercial Bank Co.,Ltd. Linyi Branch Pledgor: Yamada New Material Group Co.,Ltd. Registration number: Y2024980002393 |
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