CN106067764B - The fully integrated Ka wave band millimeter wave orthogonal voltage-controlled vibrator of CMOS low gain broad tuning range - Google Patents
The fully integrated Ka wave band millimeter wave orthogonal voltage-controlled vibrator of CMOS low gain broad tuning range Download PDFInfo
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Abstract
The invention discloses a kind of fully integrated Ka wave band millimeter wave orthogonal voltage-controlled vibrators of CMOS low gain broad tuning range, the switching that access capacitance size is realized by the MOS variable capacitance pipe array that low and high level directly controls is added in oscillator cavity, and then realize that multi-subband is tuned to obtain low-key tuning gain and wide tuning range, and possess preferable phase noise performance.In addition, the co-plane waveguide line inductance used in voltage controlled oscillator has very high quality factor to realize better phase noise performance.The direct output difference orthogonal signalling of circuit and orthogonal precision height (< 1 °), the phase noise at centre frequency 30GHz, at 1MHz and 10MHz frequency deviation can reach -107.3dBc/Hz and -129.6dBc/Hz.Total power consumption is 80mW.It can be used as the local oscillation signal source in Ka wave band wireless communication system, the voltage controlled oscillator that also can be used as in frequency synthesizer uses.
Description
Technical field
The invention belongs to the technical field of millimetre integrated circuit design, especially a kind of complementary metal oxide semiconductors
The fully integrated Ka wave band millimeter wave orthogonal voltage-controlled vibrator of low gain broad tuning range, can be used for the high-speed radiocommunication of complex modulation
In system.
Background technique
In recent years, with broadband services, the especially rapid growth of broadband multimedia services demand, using L-band (1~
2GHz) or the wireless communication system of the low bands such as C-band (4~8GHz) has tended to be saturated, and cannot fit compared with low band
The communication system of high-speed, big broadband is answered, this just forces domestic and foreign scholars to turn to research millimeter wave band (30~300GHz) nothing
Line communication.
Millimeter wave band has extremely wide bandwidth, this undoubtedly very attractive today in frequency resource anxiety.Identical
The wave beam of millimeter wave is more much narrower than the wave beam of microwave under antenna size, therefore has higher resolution ratio.It is compared with microwave, milli
The size of metric wave component is much smaller, therefore millimeter-wave systems are easier to minimize.And compared with laser, the propagation of millimeter wave
The influence of climate is much smaller, it is believed that has round-the-clock characteristic.Therefore, millimetre-wave attenuator becomes and in recent years wirelessly communicates
Research hotspot.
Ka wave band millimeter wave (26.5~40GHz) wireless communication because its own advantage become Future broadband satellite communication and
The development trend of the 5th generation (5G) mobile communication, advantage have: bandwidth abundant (theoretical bandwidth has 3.5GHz), message capacity be big,
Realize that wave beam is narrow, equipment volume is small and strong antijamming capability etc..Therefore, Ka band satellite communication system can be logical for high speed satellite
Letter, gigabit grade broadband digital transmission, high-definition television (HDTV), satellite news gathering (SNG), VSAT business, directly
A kind of brand-new means are provided to the new business such as family's (DTH) business and personal satellite communication.Samsung and South Korea's SK telecommunication are before this
The test of the 5th generation (5G) mobile communication system based on 28GHz millimeter wave is completed, but this is just from 5G mobile communication technology
There are still distances for formula commercialization.So research Ka wave band has great importance.However, Ka wave band is maximum the disadvantage is that link drops
Rain loss is more serious, maximum up to 30dB, impacts to the amplitude-phase of transmission signal, in turn results in communications system transmission matter
The deterioration of amount and system performance.So this requires Ka wave band local oscillation signal sources to possess good phase noise performance to mention
It rises the TX EVM performance of transmitter, increase the output signal-to-noise ratio of receiver.In the transceiver architecture of zero intermediate frequency or Low Medium Frequency often
Using I-Q orthohormbic structure to realize that image frequency inhibits, therefore, the orthogonal local oscillation signal for generating high orthogonal precision becomes very necessary.
And millimeter-wave communication system, because its broadband character requirement output signal is with very wide frequency range, this is just to local oscillation signal
Tuning range propose requirement.
And Ka wave band millimeter wave voltage controlled oscillator as in Ka wave band millimeter wave wireless communication system local oscillation signal source or
Important module in frequency synthesizer, the quality of performance influence the performance of entire communication system very big.In recent years in
The Ka-band voltage controlled oscillator that the Group III-V semiconductors such as GaAs, InP technique and BiCMOS technique are realized has successful case, but
Its higher cost, power consumption are larger.In contrast, have many advantages, such as high integrated level, cost and low in energy consumption, Ke Yishi under CMOS technology
Existing front ends of millimeter waves circuit and baseband circuit it is integrated, there is significant advantage in the SoC system integration.But CMOS technology substrate damages
Consumption is big, this brings challenges to the design of high-quality-factor passive device；And under CMOS technology active device cutoff frequency it is opposite
It is lower, realize that high performance Ka wave band millimeter wave voltage controlled oscillator is a big difficulty always based on CMOS technology.
Summary of the invention
The object of the present invention is to provide a kind of fully integrated Ka wave band millimeter wave of CMOS low gain wide tuning range is orthogonal voltage-controlled
Oscillator.
The object of the present invention is achieved like this:
A kind of fully integrated Ka wave band millimeter wave orthogonal voltage-controlled vibrator of CMOS low gain broad tuning range, feature are the vibration
It swings device to be made of two oscillator cores and coupling network, each oscillator core is selected by NMOSFET device and passive device
Frequency network composition, two oscillator cores couple to form the orthogonal voltage-controlled vibrator by active device coupling network.It has
Body form are as follows:
In first oscillator core VCO1, the source electrode of the first NMOS tube M11 and the source electrode of the second NMOS tube M12 connect jointly
Be connected on ground wire GND, the drain electrode of the first NMOS tube M11, the grid of the second NMOS tube M12, the first variable capacitance pipe M13 grid
Pole, the grid of third variable capacitance pipe M15, the 5th variable capacitance pipe M17 grid be commonly connected to the positive of oscillator core
Output end IP, the drain electrode of the second NMOS tube M12, the grid of the first NMOS tube M11, the grid of the second variable capacitance pipe M14, the 4th
The grid of variable capacitance pipe M16, the 6th variable capacitance pipe M18 grid be commonly connected to the reversed-phase output of oscillator core
IN.The source electrode and drain electrode of first variable capacitance pipe M13, the source electrode and drain electrode of the second variable capacitance pipe M14 and input tuning voltage
VTUNE is held to be connected, source electrode and drain electrode, the source electrode and drain electrode and input of the 4th variable capacitance pipe M16 of third variable capacitance pipe M15
Switch level control terminal SW1 is connected；The source electrode and drain electrode of 5th variable capacitance pipe M17, the source electrode of the 6th variable capacitance pipe M18 and
Drain electrode is connected with input switch level control terminal SW2.
Difference transmission lines inductance L1 by the first co-planar waveguide D1, the second coplanar wave band D2 and metal contact wires realize, first
Co-planar waveguide D1 is made of the ground line of the first signal transmssion line S1 and first G1, and the second co-planar waveguide D2 is by second signal transmission line
The ground line G2 composition of S2 and second, one end of the first signal transmssion line S1 and second signal transmission line S2 respectively with oscillator core
Positive output end IP, oscillator core reversed-phase output IN be connected, the first signal transmssion line S1 and second signal transmission line
The physical centre position of the metal wire C_V connection of the other end of S2, short circuit connects power vd D；First ground line G1 and second connects
The other end of ground wire G2 metal wire C_G, the physical centre of connecting line are connected with GND；
In second oscillator core VCO2, the source electrode of third NMOS tube M21 is connect jointly with the source electrode of the 4th NMOS tube M22
Onto ground wire GND, the drain electrode of third NMOS tube M21, the grid of the 4th NMOS tube M22, the 7th variable capacitance pipe M23 grid,
The positive that the grid of 9th variable capacitance pipe M25, the grid of the 11st variable capacitance pipe M27 are commonly connected to oscillator core is defeated
The drain electrode of outlet QP, the 4th NMOS tube M22, the grid of third NMOS tube M21, the grid of the 8th variable capacitance pipe M24, the tenth can
The grid of the grid, the 12nd variable capacitance pipe M28 that become capacitance tube M26 is commonly connected to the reversed-phase output of oscillator core
QN.Source electrode and drain electrode, the source electrode and drain electrode of the 8th variable capacitance pipe M24 and the input tuning voltage of 7th variable capacitance pipe M23
VTUNE is held to be connected, source electrode and drain electrode, the source electrode and drain electrode and input of the tenth variable capacitance pipe M26 of the 9th variable capacitance pipe M25
Switch level control terminal SW1 is connected；The source of the source electrode and drain electrode of 11st variable capacitance pipe M27, the 12nd variable capacitance pipe M28
Pole and drain electrode are connected with input switch level control terminal SW2.
Difference transmission lines inductance L2 is identical with the structure of difference transmission lines inductance L1, one end difference of two signal wires
It is connected with the reversed-phase output QN of the positive output end QP of oscillator core, oscillator core, the other end of two signal wires is used
The physical centre position of metal wire connection, short circuit connects power vd D；The other end of two ground lines is connected with metal wire, is connected
The center of line is connected with GND；
In coupling network CO1, the grid of the first coupling pipe Mc1 and drain electrode, the source electrode of the second coupling pipe Mc2 and second vibration
The positive output end QP for swinging device core is connected, the source electrode and the of the grid of the second coupling pipe Mc2 and drain electrode, third coupling pipe Mc3
The reversed-phase output IN of one oscillator core is connected, and third couples the grid of pipe Mc3 and the source of drain electrode, the 4th coupling pipe Mc4
Pole is connected with the reversed-phase output QN of second oscillator core, the grid of the 4th coupling pipe Mc4 and drain electrode, the first coupling pipe
The source electrode of Mc1 is connected with the positive output end IP of first oscillator core.
Described difference transmission lines inductance L1, L2 are difference co-plane waveguide line inductance, the third, the 4th, the 5th, the
Six, the nine, the ten, the 11st, the 12nd variable capacitance pipe is all made of the realization of N-type accumulation type MOS varactor, and is all made of level
It is directly connected to, does not use switch metal-oxide-semiconductor form；Catenet between first oscillator core and the second oscillator core
Network is realized using active MOS device.
Using high-quality-factor co-plane waveguide line inductance to realize excellent phase noise performance in the present invention.The present invention
In two voltage controlled oscillator cores between use the coupling of active device coupled modes to realize the orthogonal signalling of high orthogonal precision
Output.To obtain wider frequency-tuning range and keeping lower and more constant voltage controlled oscillator tuning gain Kvco, this
Invention, which proposes the N-type accumulation type MOS variable capacitance pipe array that low and high level directly controls, realizes the voltage controlled oscillation of multi-subband
Device tuning manner.
The present invention has the advantages that
(1) phase noise performance is good
Co-plane waveguide line inductance possesses excellent prime factor, is better than 35 in 30GHz；It is directly controlled using by low and high level
The quality factor of the N-type accumulation type MOS variable capacitance pipe array of system are better than 15 in 30GHz, so as to avoid switching device
It introduces, optimizes phase noise performance.In addition, optimizing electricity without using tail current source in the structure of oscillator core circuit
The phase noise performance on road, and couple pipe Mc1, Mc2, Mc3, Mc4 and do not introduce significant noise.When oscillator operation is in centre frequency
When 30GHz, the phase noise at 1MHz and 10MHz frequency deviation respectively reaches -107.3dBc/Hz and -129.6dBc/Hz.
(2) low in energy consumption
Only cross-coupling pipe M11, M12, M21, M22 consumes DC voltage nargin in circuit, so supply voltage can be set
It is calculated as lower 1.2V, circuit overall power is lower, and can obtain biggish output voltage swing.
(3) output is the orthogonal precision height of orthogonal signalling and orthogonal signalling
Circuit generates orthogonal signalling output by the way of active device coupling network, in-phase injection coupling, and circuit is orthogonal
The phase error of output signal is less than 1 °.
(4) tuning gain (Kvco) is low and more constant, and frequency-tuning range is wide
The MOS variable capacitance pipe array directly controlled by low and high level is added in resonant cavity and realizes cutting for access capacitance size
It changes, and then realizes multi-subband tuning to obtain low-key tuning gain and wide tuning range, to obtain lower and more constant pressure
Control oscillator tuning gain Kvco (0.8GHz/V~1.2GHz/V), and realize wider frequency-tuning range 27.5GHz~
33.5GHz (19.7%).
Detailed description of the invention
Fig. 1 is circuit diagram of the present invention；
Fig. 2 is the outline drawing that difference transmission lines inductance L1, L2 use co-plane waveguide line to realize in the present invention；In figure, D1
It is respectively two sections of co-planar waveguides with D2, S1 and S2 are respectively signal transmssion line, and G1 and G2 are respectively to be grounded, and C_G and C_V are gold
Belong to connecting line.
Specific embodiment
The present invention will be described in detail with reference to the accompanying drawings and embodiments.
Embodiment
Refering to fig. 1, the structure of the circuit is that active device couples LC difference NMOS cross coupling structure, can provide difference in orthogonality
Divide output signal.First NMOS tube M11 and the second NMOS transistor M12, third NMOS tube M21 and the 4th NMOS tube M22 are each other
Cross-coupling connection, provides negative resistance to offset the loss of differential inductance L1, L2 and all variable capacitance pipes, to maintain to shake
It swings.First NMOS tube M11, the second NMOS tube M12, third NMOS tube M21, the 4th NMOS tube M22 breadth length ratio carried out rationally
Selection, on the one hand reduce the parasitic capacitance of itself, on the other hand meet starting condition for oscillation；The size of variable capacitance pipe also into
It has gone rational design, has on the one hand considered its shared chip area, on the other hand considered to meet in multi-subband tuning each subband
The requirement of tuning range and spacing.Difference transmission lines inductance L1, L2 size is identical, using co-plane waveguide cable architecture, access
Equivalent inductance is L.First NMOS tube M11, the second NMOS tube M12, third NMOS tube M21, the 4th NMOS tube M22 drain electrode to ground
Parasitic capacitance be Cp.The first, second, the equivalent capacity of the seven, the 8th variable capacitance pipe M13, M14, M23, M24 is
Cvar, third, the maximum (SW1 connects low level) of the four, the nine, the tenth variable capacitance pipe M15, M16, M25, M26 and minimum (SW1
Connecing high level) equivalent capacity is respectively Cmax1、Cmin1, the five, the six, the 11st, the 12nd variable capacitance pipe M17, M18, M27,
The maximum (SW2 connects low level) of M28 and minimum (SW2 connects high level) equivalent capacity are respectively Cmax2, Cmin2.Their common structures
At the resonant cavity of oscillator.
When input switch signal SW1, SW2 connect low level, oscillator frequency of oscillation is determined by following formula
When input switch signal SW1 connects high level, SW2 connects low level, oscillator frequency of oscillation is determined by following formula
When input switch signal SW1 connects low level, SW2 connects high level, oscillator frequency of oscillation is determined by following formula
When input switch signal SW1, SW2 connect high level, oscillator frequency of oscillation is determined by following formula
The size of parasitic capacitance Cp is mainly by the size of first, second, third, fourth NMOS tube M11, M12, M21, M22
It determines；Cmax1With Cmin1By third, the size and input switch of the four, the nine, the tenth variable capacitance pipe M15, M16, M25, M26
Level control terminal SW1 is determined；Cmax2With Cmin2By the five, the six, the 11st, the 12nd variable capacitance pipe M17, M18, M27, M28
Size and input switch level control terminal SW2 determine；CvarBy the first variable capacitance pipe M13, the second variable capacitance pipe M14,
Seven variable capacitance pipe M23, the size of the 8th variable capacitance pipe M24 and tuning voltage VTUNE are determined.By formula (1), (2), (3),
(4) as long as it can be seen that the value of Rational choice inductance L, the size of variable capacitance pipe and the first, second, third, fourth NMOS tube M11,
The size of M12, M21, M22, the tuning range of oscillator can be covered with 27.5GHz-33.5GHz band limits.
All device sizes of the present embodiment are shown in Table 1.
Table 1
| Device name | Size |
| M11、M12、M21、M22 | 38μm/120nm |
| M13、M14、M23、M24 | 15*2*1μm/240nm |
| M15、M16、M25、M26 | 12*2*1μm/240nm |
| M17、M18、M27、M28 | 12*4*1μm/240nm |
| MC1、MC2、MC3、MC4 | 19.98μm/120nm |
| L1、L2 | 86pH |
Claims (2)
1. a kind of fully integrated Ka wave band millimeter wave orthogonal voltage-controlled vibrator of CMOS low gain broad tuning range, it is characterised in that the vibration
It swings device to be made of two oscillator cores and coupling network, two oscillator cores form described by active device coupling network
Orthogonal voltage-controlled vibrator；Its concrete form are as follows:
In first oscillator core (VCO1), the source electrode of the first NMOS tube M11 and the source electrode of the second NMOS tube M12 are commonly connected to
On ground wire GND, the drain electrode of the first NMOS tube M11, the grid of the second NMOS tube M12, the grid of the first variable capacitance pipe M13,
The grid of three variable capacitance pipe M15, the grid of the 5th variable capacitance pipe M17 are commonly connected to the positive output end of oscillator core
IP, the drain electrode of the second NMOS tube M12, the grid of the first NMOS tube M11, the grid of the second variable capacitance pipe M14, the 4th can power transformation
The grid of the grid, the 6th variable capacitance pipe M18 that hold pipe M16 is commonly connected to the reversed-phase output IN of oscillator core；First
The source electrode and drain electrode of variable capacitance pipe M13, the source electrode and drain electrode of the second variable capacitance pipe M14 and input tuning voltage end VTUNE
It is connected, the source electrode and drain electrode of third variable capacitance pipe M15, the source electrode and drain electrode of the 4th variable capacitance pipe M16 and input switch electricity
Flat control terminal SW1 is connected；The source electrode and drain electrode of 5th variable capacitance pipe M17, the source electrode and drain electrode of the 6th variable capacitance pipe M18 with
Input switch level control terminal SW2 is connected；
Difference transmission lines inductance L1 by the first co-planar waveguide (D1), the second co-planar waveguide (D2) and metal contact wires realize, first
Co-planar waveguide (D1) is made of the first signal transmssion line (S1) and the first ground line (G1), and the second co-planar waveguide (D2) is by the second letter
Number transmission line (S2) and the second ground line (G2) composition, one end of the first signal transmssion line (S1) and second signal transmission line (S2)
It is connected respectively with the reversed-phase output IN of the positive output end IP of oscillator core, oscillator core, the first signal transmssion line
(S1) it is connected with the other end of second signal transmission line (S2) with the first metal wire (C_V), in the physics of the first metal wire (C_V)
Heart position connects power vd D；The other end of first ground line (G1) and the second ground line (G2) is connected with the second metal wire (C_G)
It connects, the physical centre position of the second metal wire (C_G) is connected with GND；
In second oscillator core (VCO2), the source electrode of the source electrode and the 4th NMOS tube M22 of third NMOS tube M21 is commonly connected to
On ground wire GND, the drain electrode of third NMOS tube M21, the grid of the 4th NMOS tube M22, the grid of the 7th variable capacitance pipe M23,
The grid of nine variable capacitance pipe M25, the grid of the 11st variable capacitance pipe M27 are commonly connected to the positive output of oscillator core
QP is held, the drain electrode of the 4th NMOS tube M22, the grid of third NMOS tube M21, the grid of the 8th variable capacitance pipe M24, the tenth can be changed
The grid of capacitance tube M26, the 12nd variable capacitance pipe M28 grid be commonly connected to the reversed-phase output QN of oscillator core；
Source electrode and drain electrode, the source electrode and drain electrode of the 8th variable capacitance pipe M24 and the input tuning voltage end of 7th variable capacitance pipe M23
VTUNE is connected, and the source electrode and drain electrode of the 9th variable capacitance pipe M25, the source electrode and drain electrode of the tenth variable capacitance pipe M26 and input are opened
Powered-down flat control terminal SW1 is connected；The source electrode of the source electrode and drain electrode of 11st variable capacitance pipe M27, the 12nd variable capacitance pipe M28
It is connected with drain electrode with input switch level control terminal SW2；
Difference transmission lines inductance L2 is identical with the structure of difference transmission lines inductance L1, one end of two signal wires respectively with vibration
The reversed-phase output QN of the positive output end QP, oscillator core that swing device core are connected, the other end metal of two signal wires
The physical centre position of line connection, metal wire connects power vd D；The other end of two ground lines is connected with another metal wire, separately
The physical centre position of one metal wire is connected with GND；
In coupling network (CO1), the grid of the first coupling pipe Mc1 and drain electrode, the source electrode of the second coupling pipe Mc2 and second oscillation
The positive output end QP of device core is connected, the source electrode and first of the grid of the second coupling pipe Mc2 and drain electrode, third coupling pipe Mc3
The reversed-phase output IN of a oscillator core is connected, and third couples the grid of pipe Mc3 and the source electrode of drain electrode, the 4th coupling pipe Mc4
It is connected with the reversed-phase output QN of second oscillator core, the grid of the 4th coupling pipe Mc4 and drain electrode, the first coupling pipe Mc1
Source electrode be connected with the positive output end IP of first oscillator core.
2. voltage controlled oscillator according to claim 1, it is characterised in that: described difference transmission lines inductance L1, L2 are difference
Co-plane waveguide line inductance, the third, the 4th, the 5th, the 6th, the 9th, the ten, the 11st, the 12nd variable capacitance pipe
It is all made of the realization of N-type accumulation type MOS varactor, and is all made of level and is directly connected to；First oscillator core and second
Coupling network between oscillator core is realized using active MOS device.
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| CN103414434A (en) * | 2013-08-08 | 2013-11-27 | 南京邮电大学 | Low-phase-noise quadrature voltage-controlled oscillator |
| CN104917463A (en) * | 2015-06-26 | 2015-09-16 | 华东师范大学 | Complementary metal-oxide semiconductor fully-integrated 71-76GHz LC voltage controlled oscillator |
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| CN103414434A (en) * | 2013-08-08 | 2013-11-27 | 南京邮电大学 | Low-phase-noise quadrature voltage-controlled oscillator |
| CN104917463A (en) * | 2015-06-26 | 2015-09-16 | 华东师范大学 | Complementary metal-oxide semiconductor fully-integrated 71-76GHz LC voltage controlled oscillator |
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