CN106057875A - Voltage regulation pure spin current demultiplexer - Google Patents
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66984—Devices using spin polarized carriers
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Abstract
The invention relates to a voltage regulation pure spin current demultiplexer. The voltage regulation pure spin current demultiplexer is characterized by comprising a grid voltage structure, a spin channel and a substrate, wherein the grid voltage structure comprises a grid electrode and an insulation material layer, and the grid voltage structure is specifically a structure having three types of voltage control modes, including top grid voltage control, back grid voltage control and double-grid voltage control. The voltage regulation pure spin current demultiplexer realizes voltage regulation pure spin current distribution and is advantaged in that a traditional magnetic field is replaced through voltage regulation to change energy loss generated in spin signals, and power consumption of a device is reduced; through voltage magnitude regulation, spin resistance magnitudes of different channels are changed, pure spin current distribution is controlled, and reconfigurability of a multi-path demultiplexer is realized; the voltage regulation pure spin current demultiplexer is taken as a basic unit of a reconfigurable logic circuit, design of a spin logic circuit is simplified, a circuit integration level is improved, and process and manufacturing processing are convenient; the voltage regulation pure spin current demultiplexer can be further applied to the novel spin logic application field of a spin current regulator besides the pure spin current logic circuit.
Description
[technical field]
The present invention relates to a kind of regulating and controlling voltage pure spin current demultiplexer, be used for realizing pure spin in spin logic circuit
The restructural distribution of stream, belongs to spin logical device technical field.
[background technology]
Conventional spin electronics device realizes the storage to information, with huge magnetoelectricity by the direction of magnetization controlling magnetic material
Derive the integrated-optic device such as Spin Valve and magnetic tunnel-junction based on inhibition effect, be widely used in magnetic non volatile storage
The fields such as device, high-precision sensor and biological perception detection, bring huge science and technology and industry innovation.Although traditional spin
Electronic device can make storage data power down non-volatile, thus overcomes the quiescent dissipation problem of current computing system, but data
The frequent transitions between electricity condition and magnetic state is needed, it is impossible to solve the dynamic of big data transmission in transmission and logical calculated
Power consumption.Spin logical device based on pure spin current, utilizes pure spin current to carry out transmission and the logical operations of information, can efficient solution
Certainly device dynamic power problems, promotes based on low-power consumption spin logical device large scale integrated circuit and the development of the system of calculating.
One basic device architecture of pure spin current is horizontal Spin Valve, and its structure includes injecting electrode/spin of spinning
Raceway groove/spin detecting electrode.Spin injecting electrode is mainly made up of clad, ferromagnetic layer and tunnel layer: ferromagnetic layer is used for producing
Specific spin polarization direction, conventional ferromagnetic layer includes feeromagnetic metal and the alloys thereof such as ferrum (Fe), cobalt (Co), nickel (Ni)；Bag
Coating is for preventing the oxidation of ferromagnetic layer, and conventional material has gold (Au), platinum (Pt) etc.；Tunnel layer then can reduce ferromagnetic electrode
In the spin raceway groove that directly contact causes, the relaxation of spinning polarized electron, improves Spin Injection Efficiency, and conventional tunnel layer includes
Magnesium oxide (MgO), aluminium oxide (Al2O3) etc..Spin raceway groove is the passage of spin transport diffusion, and the most conventional material mainly divides
Becoming two classes, a class is metal material (such as copper, silver, aluminum etc.), and a class is semi-conducting material (silicon, CNT, Graphene etc.).
Spin channel material needs have weak spin and spin scattering mechanism, thus has longer spin and relax
Henan time and spin diffusion length, it is possible to distance spin transport, it is achieved logical operation of widely spinning.Further, borrow
Help the superposition of the pure spin current of spin-transfer torque isospin interaction mechanism and different polarised direction, can utilize pure from
Eddy flow realizes logical operations, prepares spin logical device.By majority logic based on principle of stacking, (cross polarization direction is pure certainly
After eddy flow superposition, spin current disappears), utilize the basic structural unit MUX of spin logic circuit, can realize can
Reconstruct spin and/or gate, complete multiple input logic selection function to single outfan.Spin logic circuit another
One basic structural unit multichannel coupler, the most single input to multiple output end structures, for realizing pure spin current
Distribution function.At present in spin Logic Circuit Design, the design of pure spin current multichannel coupler exists following not enough:
1. can only be by the design symmetry of spin channel length being realized the distribution of pure spin current, device function is single；
2. the distribution of pure spin current cannot be carried out Effective Regulation, for realize complexity spin logic function, need redundancy and
Complicated spin Logic Circuit Design；
The most do not possesses circuit reconfigurability, it is impossible to meet the spin Logic Circuit Design of low-power consumption, high integration, technique system
Make difficulty and cost is big.
[summary of the invention]
(1) goal of the invention:
For the function singleness based on the existence of pure spin current device mentioned in above-mentioned background, reconfigurability, circuit do not set
The problem of meter difficulty, power consumption, cost, processing technology etc., the present invention proposes a kind of regulating and controlling voltage pure spin current multichannel coupler,
Utilize voltage that pure spin current is regulated and controled, which overcome the deficiency of existing design and technology, be used for realizing the logic circuit that spins
In pure spin current restructural distribution, simplify spin Logic Circuit Design, and improve circuit level and reduce technique be fabricated to
This.
(2) technical scheme:
The technical scheme is that, a kind of regulating and controlling voltage pure spin current multichannel coupler, it is achieved one-input terminal is to how defeated
Going out end, design grid voltage is added in spin raceway groove and realizes the regulation and control of pure spin current.
A kind of regulating and controlling voltage pure spin current multichannel coupler, including gate voltage structure, spin raceway groove and substrate；Wherein, grid
Voltage structure includes gate electrode and two parts of insulating layer material；Gate voltage structure is specifically divided into three class voltage-controlled configuration: top
Gate voltage controls, back gate voltage controls and double grid Control of Voltage (comprise top-gated simultaneously and back gate voltage controls).
Described gate electrode, including the one in gold (Au), platinum (Pt), copper (Cu) or other non-ferromagnetic metal material；
Described insulating layer material, including silicon dioxide (SiO2), magnesium oxide (MgO), aluminium nitride (AlN), titanium oxide
(TiO2), aluminium sesquioxide (Al2O3), hafnium oxide (HfO2) or other materials in one；
Described spin channel material, including metal nanometer line (copper, silver, aluminum etc.), semiconductor silicon, CNT, Graphene,
One in silene, molybdenum bisuphide or other low-dimensional materials.
Substrate of the present invention includes but not limited to other dielectric substrate such as silicon chip, boron nitride, piezoid.
A kind of can be single input-dual output or multi output structure based on regulating and controlling voltage pure spin current multichannel coupler, folder
Angle variable range is 0～360 degree.
The present invention can change electronics and the spin transport prop of spin raceway groove by control gate voltage, causes raceway groove
The change of spin resistance, thus regulate the size of the pure spinning current of raceway groove.Further, in the structure of multichannel coupler, utilize
The pure spinning current size of each spin raceway groove of grid voltage controlling changing, it is possible to achieve the restructural distribution of pure spin current.
(3) advantage and effect:
The present invention proposes a kind of regulating and controlling voltage pure spin current multichannel coupler, it is achieved dividing of the pure spin current of regulating and controlling voltage
Join, compared to traditional pure spin current logical device, have a following advantage:
(1) by regulating and controlling voltage, replace classical magnetic field to change the energy loss produced in spin signals, thus reduce device
Power consumption；
(2) by regulation and control voltage swing, it is possible to achieve the size of different channel spin resistance changes, and controls pure spin current
Distribution, it is achieved the reconfigurability of multichannel coupler；
(3) present invention is as the elementary cell of reconfigurable logic circuit, simplifies the design of spin logic circuit, improves electricity
The integrated level on road, also allows for technique and fabrication and processing.
(4) except pure spin current logic circuit, model of the present invention can be additionally used in the novel spins such as spin current manipulator
Logic application field.
[accompanying drawing explanation]
Fig. 1-a double grid regulating and controlling voltage pure spin current multichannel coupler schematic three dimensional views.
Fig. 1-b back gate voltage regulates and controls pure spin current multichannel coupler schematic three dimensional views.
Fig. 1-c top-gated regulating and controlling voltage pure spin current multichannel coupler schematic three dimensional views.
Other shaped voltage of Fig. 1-d regulate and control pure spin current multichannel coupler top view.
Fig. 2-a regulating and controlling voltage changes single spin channel spin resistance variations schematic diagram (as a example by negative correlation).
Fig. 2-b regulating and controlling voltage changes single spin raceway groove pure spinning current change schematic diagram.
Fig. 2-c single input-dual output multichannel coupler regulating and controlling voltage pure spinning current distribution schematic diagram.
Wherein, map parameter is defined as:
1 top-gated electrode
2 and 5 insulating barriers
3 spin raceway grooves
4 substrates
6 back-gate electrodes
7 pure spin currents
8 device angles
RsSpin resistance
VGGrid voltage
IsSpinning current
VG,1Raceway groove 1 grid voltage
VG,2Raceway groove 2 grid voltage
Is,1Raceway groove 1 spinning current
Is,2Raceway groove 2 spinning current
[detailed description of the invention]
Referring to the drawings, the present invention is further illustrated a kind of based on regulating and controlling voltage pure spin current multichannel coupler substantive special
Point.
Being disclosed that detailed exemplary embodiment, its specific CONSTRUCTED SPECIFICATION and function detail are only to represent that description is shown
The purpose of example embodiment, therefore, it can with many selectable forms to implement the present invention, and the present invention is not construed as
It is limited only to the example embodiment herein proposed, but all changes, the equivalent fallen within the scope of the present invention should be covered
And refill.
It is a kind of based on regulating and controlling voltage pure spin current multichannel coupler that Fig. 1-a, Fig. 1-b, Fig. 1-c, Fig. 1-d are respectively the present invention
Various structures schematic diagram, only as a example by single input-dual output, in like manner can design multi output structure, angle variable range be 0～
360 degree.The present invention includes three kinds of regulating and controlling voltage structure chart 1-a to Fig. 1-c, i.e. double grid voltage, back gate voltage and top-gated voltage knot
Structure.The present invention protects the various branch shape realizing multi output, prong like as shown in Fig. 1-d.
Fig. 1-a is regulating and controlling voltage pure spin current shunt schematic three dimensional views (as a example by double grid Control of Voltage)；
Device shown in the present invention is from top to bottom by top-gated electrode (10-50nm), insulating barrier (1-100nm), spin raceway groove material
Material, insulating barrier (1-100nm) and back-gate electrode (10-50nm)；
Described gate electrode, including the one in gold (Au), platinum (Pt), copper (Cu) or other non-ferromagnetic metal material.
Described insulating layer material, including silicon dioxide (SiO2), magnesium oxide (MgO), aluminium nitride (AlN), titanium oxide
(TiO2), aluminium sesquioxide (Al2O3), hafnium oxide (HfO2) or other materials in one；
Described spin channel material, including metal nanometer line (copper, silver, aluminum etc.), semiconductor silicon, CNT, Graphene,
One in silene, molybdenum bisuphide or other low-dimensional materials.
Substrate of the present invention includes but not limited to other dielectric substrate such as silicon chip, boron nitride, piezoid.
By the method using traditional molecular beam epitaxy, electron beam evaporation, thermal evaporation, ald or magnetron sputtering
Each layer material of device is plated on substrate according to order from top to bottom, then carries out the micro-nano technology technique such as photoetching, etching
Prepare this device；Gate electrode shape can make square, rectangle (length-width ratio can be arbitrary value), circular or oval
(length-width ratio can be arbitrary value).
Fig. 2-a to Fig. 2-c is regulating and controlling voltage pure spin current multichannel coupler mode of operation schematic diagram, to change channel spin
As a example by resistance negative correlation, specific as follows:
Fig. 2-a and Fig. 2-b is that regulating and controlling voltage changes single spin channel spin resistance and the change signal of pure spin current respectively
Figure, for single spin raceway groove, along with regulation and control voltage VGIncreasing, spin resistance RsReduce, thus pure spinning current IsIncrease.
Fig. 2-c single input-dual output multichannel coupler regulating and controlling voltage pure spinning current distribution schematic diagram, by raceway groove 1 and 2
Grid voltage control multi-path choice tap.
Work as VG,1=VG,2When=0, raceway groove 1 with raceway groove 2 all in identical big spin resistance states Rs,1=Rs,2, Is,1=
Is,2, can realize dividing equally small area analysis；
Work as VG,1=V, VG,2=0, i.e. VG,1>VG,2, then Rs,1<Rs,2,Is,1<Is,2, pure spin current major part goes out toward raceway groove 1；
Work as VG,1=0, VG,2=V, i.e. VG,1<VG,2, then Rs,1>Rs,2,Is,1>Is,2, pure spin current major part goes out toward raceway groove 2；
Work as VG,1=VG,2During=V, raceway groove 1 with raceway groove 2 all in identical little spin resistance states Rs,1=Rs,2, Is,1=
Is,2, can realize dividing equally big electric current.
Claims (6)
1. a regulating and controlling voltage pure spin current multichannel coupler, it is characterised in that: include gate voltage structure, spin raceway groove and base
The end；Wherein, gate voltage structure includes gate electrode and two parts of insulating layer material；Gate voltage structure is specially three class Control of Voltage
Structure: top-gated Control of Voltage, back gate voltage control and double grid Control of Voltage.
A kind of regulating and controlling voltage pure spin current multichannel coupler the most according to claim 1, it is characterised in that: described multichannel is divided
Connecing device, can be single input-dual output or multi output structure, angle variable range be 0～360 degree.
A kind of regulating and controlling voltage pure spin current multichannel coupler the most according to claim 1 and 2, it is characterised in that: described grid
Electrode, including the one in gold, platinum, copper or other non-ferromagnetic metal material.
A kind of regulating and controlling voltage pure spin current multichannel coupler the most according to claim 1 and 2, it is characterised in that: described absolutely
Edge layer material, including the one in silicon dioxide, magnesium oxide, aluminium nitride, titanium oxide, aluminium sesquioxide, hafnium oxide.
A kind of regulating and controlling voltage pure spin current multichannel coupler the most according to claim 1 and 2, it is characterised in that: described from
Rotation channel material, including metal nanometer line, semiconductor silicon, CNT, Graphene, silene, molybdenum bisuphide or other low-dimensional materials
One in material.
A kind of regulating and controlling voltage pure spin current multichannel coupler the most according to claim 1 and 2, it is characterised in that: described base
The end, includes but not limited to silicon chip, boron nitride, piezoid or other dielectric substrate.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106876395A (en) * | 2017-01-22 | 2017-06-20 | 北京航空航天大学 | A kind of spin electric device that tunnel layer is made of resistive material |
| CN112542510A (en) * | 2019-09-23 | 2021-03-23 | 国家纳米科学中心 | Carbon nanotube-based spin field effect transistor and preparation method thereof |
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| US20150270376A1 (en) * | 2012-10-12 | 2015-09-24 | Northeastern University | Spintronic device |
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2016
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| CN103296071A (en) * | 2012-02-29 | 2013-09-11 | 中国科学院微电子研究所 | Graphene device |
| US20150270376A1 (en) * | 2012-10-12 | 2015-09-24 | Northeastern University | Spintronic device |
| US20140339501A1 (en) * | 2013-05-16 | 2014-11-20 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Low-Resistivity p-Type GaSb Quantum Wells for Low-Power Electronic Devices |
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| NIKOLAOS TOMBROS ET AL: ""Electronic spin transport and spin precession in single graphene layers at room temperature"", 《NATURE》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876395A (en) * | 2017-01-22 | 2017-06-20 | 北京航空航天大学 | A kind of spin electric device that tunnel layer is made of resistive material |
| CN112542510A (en) * | 2019-09-23 | 2021-03-23 | 国家纳米科学中心 | Carbon nanotube-based spin field effect transistor and preparation method thereof |
| CN112542510B (en) * | 2019-09-23 | 2024-07-02 | 国家纳米科学中心 | Spin field effect transistor based on carbon nano tube and preparation method thereof |
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| CN106057875B (en) | 2019-12-06 |
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