CN106057842A - Preparation method of CMOS image sensor - Google Patents
Preparation method of CMOS image sensor Download PDFInfo
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- CN106057842A CN106057842A CN201610693429.2A CN201610693429A CN106057842A CN 106057842 A CN106057842 A CN 106057842A CN 201610693429 A CN201610693429 A CN 201610693429A CN 106057842 A CN106057842 A CN 106057842A
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- image sensor
- cmos image
- photodiode area
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- pixel device
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- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- 238000000137 annealing Methods 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000005468 ion implantation Methods 0.000 claims abstract description 17
- 238000005516 engineering process Methods 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 22
- 238000001259 photo etching Methods 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 238000012360 testing method Methods 0.000 abstract description 5
- 239000000047 product Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000012806 monitoring device Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
Abstract
The invention provides a preparation method of a CMOS image sensor. The method comprises the execution steps of: S1, carrying out P type ion doping on a pixel device photodiode area of the CMOS image sensor; S2, carrying out N type source and drain electrode ion implantation on the pixel device photodiode area of the CMOS image sensor; S3, carrying out annealing processing on the pixel device photodiode area of the CMOS image sensor; and S4, carrying out P type source and drain electrode ion implantation on the pixel device photodiode area of the CMOS image sensor. According to the invention, white pixel points of the pixel device photodiode area are improved, the product yield rate is improved, and Image Level and FWC testing values are not influenced.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to the preparation method of a kind of cmos image sensor.
Background technology
From phase at the end of the sixties in last century, after AT&T Labs of the U.S. proposes solid imaging element concept, solid state image sensing
Device is just developed rapidly, becomes an important branch in sensing technology.It is that personal computer multimedia is indispensable
Peripheral hardware, be also the core devices in monitoring device.
In recent years, due to IC design technology and the raising of technological level, cmos image sensor (CIS, CMOS
Image Sensor) because of amplification, row parallel organization in its intrinsic such as pixel, integrated level is high, use single supply and low-voltage
The features such as power supply, low cost and technical threshold are low are applied even more extensively.Meanwhile, low cost, single-chip, low in energy consumption and design
The advantage such as simple makes CIS at low side pictures such as security surveillance system, videophone, camera mobile phone, toy, automobile and medical electronics
Element product scope is cut a dash.
White pixel (WP, White Pixel) refers to the DN value of the CIS device output picture more than 64 under non-illuminated conditions
Prime number amount, it is an important indicator of assessment CIS device performance, direct reaction device image quality.Therefore, CIS device is improved
Part WP performance, i.e. reduces the long term object that white pixel point (WP Count) is CIS device fabrication.But, existing
In some CIS making technologies, described white pixel point intermediate value is about 565, and crystal round fringes (Wafer Edge) high level easily causes
Yield lost efficacy.
Therefore the problem existed for prior art, this case designer, by being engaged in the industry experience for many years, actively studies
Improvement, has then had the preparation method of a kind of cmos image sensor of the present invention.
Summary of the invention
The present invention be directed in prior art, in traditional CIS making technology, described white pixel point intermediate value is left 565
The right side, crystal round fringes (Wafer Edge) high level easily causes the defects such as yield inefficacy and provides the preparation side of a kind of cmos image sensor
Method.
For realizing the purpose of the present invention, the present invention provides the preparation method of a kind of cmos image sensor, and described CMOS schemes
The preparation method of picture sensor, including: perform step S1: the pixel device photodiode area of cmos image sensor is entered
Row p-type ion doping；Perform step S2: the pixel device photodiode area of cmos image sensor is carried out N-type source and drain
Pole ion implanting；Perform step S3: the pixel device photodiode area of cmos image sensor is made annealing treatment；Hold
Row step S4: the pixel device photodiode area of cmos image sensor is carried out p-type source-drain electrode ion implanting.
Alternatively, the pixel device photodiode area of described cmos image sensor carries out p-type ion doping and enters one
Step includes photoetching process, ion implantation technology, removal photoresist process.
Alternatively, the pixel device photodiode area of described cmos image sensor carries out N-type source-drain electrode ion note
Enter to farther include photoetching process, ion implantation technology, removal photoresist process.
Alternatively, the pixel device photodiode area of described cmos image sensor carries out the annealing temperature made annealing treatment
Degree is 550～610 DEG C.
Alternatively, when the pixel device photodiode area of described cmos image sensor carries out the annealing made annealing treatment
A length of 40～80min.
Alternatively, the pixel device photodiode area of described cmos image sensor carries out the annealing temperature made annealing treatment
Degree is 580 DEG C, and anneal duration is 60min.
Alternatively, the pixel device photodiode area of described cmos image sensor carries out p-type source-drain electrode ion note
Enter to farther include photoetching process, ion implantation technology, removal photoresist process.
Alternatively, in the cmos image sensor white pixel point that the preparation method of described cmos image sensor is obtained
Value as little as 410.
In sum, the preparation method of cmos image sensor of the present invention is by improving pixel device photodiode
The white pixel point in region, to improve product yield；The preparation method of the most described cmos image sensor is to described CMOS
After the pixel device photodiode area of imageing sensor carries out N-type source-drain electrode ion implantation technology, cmos image is sensed
The pixel device photodiode area of device makes annealing treatment, and the last pixel device light to described cmos image sensor
Photodiode area carries out p-type source-drain electrode ion implanting, can by yield improve 1%, and to Image Level, FWC test value without
Impact.
Accompanying drawing explanation
Fig. 1 show the flow chart of the preparation method of cmos image sensor of the present invention.
Detailed description of the invention
By describing the technology contents of the invention, structural feature in detail, being reached purpose and effect, below in conjunction with reality
Execute example and coordinate accompanying drawing to be described in detail.
From phase at the end of the sixties in last century, after AT&T Labs of the U.S. proposes solid imaging element concept, solid state image sensing
Device is just developed rapidly, becomes an important branch in sensing technology.It is that personal computer multimedia is indispensable
Peripheral hardware, be also the core devices in monitoring device.
In recent years, due to IC design technology and the raising of technological level, cmos image sensor (CIS, CMOS
Image Sensor) because of amplification, row parallel organization in its intrinsic such as pixel, integrated level is high, use single supply and low-voltage
The features such as power supply, low cost and technical threshold are low are applied even more extensively.Meanwhile, low cost, single-chip, low in energy consumption and design
The advantage such as simple makes CIS at low side pictures such as security surveillance system, videophone, camera mobile phone, toy, automobile and medical electronics
Element product scope is cut a dash.
White pixel (WP, White Pixel) refers to the DN value of the CIS device output picture more than 64 under non-illuminated conditions
Prime number amount, it is an important indicator of assessment CIS device performance, direct reaction device image quality.Therefore, CIS device is improved
Part WP performance, i.e. reduces the long term object that white pixel point (WP Count) is CIS device fabrication.But, existing
In some CIS making technologies, described white pixel point intermediate value is about 565, and crystal round fringes (Wafer Edge) high level easily causes
Yield lost efficacy.
Refer to the flow chart that Fig. 1, Fig. 1 show the preparation method of cmos image sensor of the present invention.Described CMOS schemes
The preparation method of picture sensor, including:
Perform step S1: the pixel device photodiode area of cmos image sensor is carried out p-type ion doping；
Perform step S2: the pixel device photodiode area of cmos image sensor is carried out N-type source-drain electrode ion
Inject；
Perform step S3: the pixel device photodiode area of cmos image sensor is made annealing treatment；
Perform step S4: the pixel device photodiode area of cmos image sensor is carried out p-type source-drain electrode ion
Inject.
Wherein, to carry out p-type ion doping further for the pixel device photodiode area of described cmos image sensor
Including photoetching process, ion implantation technology, removal photoresist process.Pixel device photoelectricity two pole of described cmos image sensor
Territory, area under control carries out N-type source-drain electrode ion implanting and farther includes photoetching process, ion implantation technology, removal photoresist process.Institute
State the pixel device photodiode area of cmos image sensor to carry out p-type source-drain electrode ion implanting and farther include photoetching work
Skill, ion implantation technology, removal photoresist process.
As specific embodiment, without limitation, the pixel device photodiode of described cmos image sensor
The annealing temperature that region carries out making annealing treatment is 550～610 DEG C.The pixel device photodiode of described cmos image sensor
The anneal duration that region carries out making annealing treatment is 40～80min.It is highly preferred that the pixel device light of described cmos image sensor
The annealing temperature that photodiode area carries out making annealing treatment is 580 DEG C, and anneal duration is 60min.
In order to disclose the technical scheme of the present invention more intuitively, highlight the beneficial effect of the present invention, in conjunction with being embodied as
Mode, preparation method and principle to described cmos image sensor are illustrated.In a specific embodiment, described CMOS figure
As the technological parameter of the preparation method of sensor is only enumerated, it is not construed as the restriction to technical solution of the present invention.At described tool
In body embodiment, carry out the annealing temperature made annealing treatment with the pixel device photodiode area of described cmos image sensor
Degree is 580 DEG C, as a example by anneal duration is 60min.
Please continue to refer to Fig. 1, the preparation method of described cmos image sensor, including:
Perform step S1: the pixel device photodiode area of cmos image sensor is carried out p-type ion doping；
Perform step S2: the pixel device photodiode area of cmos image sensor is carried out N-type source-drain electrode ion
Inject；
Perform step S3: the pixel device photodiode area of cmos image sensor is made annealing treatment；
Perform step S4: the pixel device photodiode area of cmos image sensor is carried out p-type source-drain electrode ion
Inject.
Wherein, to carry out p-type ion doping further for the pixel device photodiode area of described cmos image sensor
Including photoetching process, ion implantation technology, removal photoresist process.Pixel device photoelectricity two pole of described cmos image sensor
Territory, area under control carries out N-type source-drain electrode ion implanting and farther includes photoetching process, ion implantation technology, removal photoresist process.Institute
State the pixel device photodiode area of cmos image sensor to carry out p-type source-drain electrode ion implanting and farther include photoetching work
Skill, ion implantation technology, removal photoresist process.
Being shown by product yield test data of experiment, the preparation method of cmos image sensor of the present invention is to improve CIS
The white pixel point presentation that device is final, improves product yield.The white pixel point intermediate value of described CIS device is by existing 565
It is reduced to 410, improves 27%.On the other hand, tested by overall yield it is known that at the picture of described cmos image sensor
After element device photoelectric diode area carries out N-type source-drain electrode ion implantation technology, the pixel device light to cmos image sensor
Photodiode area makes annealing treatment, and finally enters the pixel device photodiode area of described cmos image sensor
Row p-type source-drain electrode ion implanting, can improve 1% by yield, and on Image Level, FWC test value without impact.
In sum, the preparation method of cmos image sensor of the present invention is by improving pixel device photodiode
The white pixel point in region, to improve product yield；The preparation method of the most described cmos image sensor is to described CMOS
After the pixel device photodiode area of imageing sensor carries out N-type source-drain electrode ion implantation technology, cmos image is sensed
The pixel device photodiode area of device makes annealing treatment, and the last pixel device light to described cmos image sensor
Photodiode area carries out p-type source-drain electrode ion implanting, can by yield improve 1%, and to Image Level, FWC test value without
Impact.
Those skilled in the art it will be appreciated that the most without departing from the spirit or scope of the present invention, can be to this
Bright carry out various modifications and variations.Thus, if any amendment or modification fall into the protection of appended claims and equivalent
In the range of time, it is believed that the present invention contain these amendment and modification.
Claims (8)
1. the preparation method of a cmos image sensor, it is characterised in that the preparation method of described cmos image sensor, bag
Include:
Perform step S1: the pixel device photodiode area of cmos image sensor is carried out p-type ion doping；
Perform step S2: the pixel device photodiode area of cmos image sensor is carried out N-type source-drain electrode ion implanting；
Perform step S3: the pixel device photodiode area of cmos image sensor is made annealing treatment；
Perform step S4: the pixel device photodiode area of cmos image sensor is carried out p-type source-drain electrode ion implanting.
2. the preparation method of as claimed in claim 1 cmos image sensor, it is characterised in that described cmos image sensor it
Pixel device photodiode area carries out p-type ion doping and farther includes photoetching process, ion implantation technology, removal photoetching
Adhesive process.
3. the preparation method of as claimed in claim 1 cmos image sensor, it is characterised in that described cmos image sensor it
Pixel device photodiode area carries out N-type source-drain electrode ion implanting and farther includes photoetching process, ion implantation technology, goes
Except photoresist process.
4. the preparation method of as claimed in claim 1 cmos image sensor, it is characterised in that described cmos image sensor it
The annealing temperature that pixel device photodiode area carries out making annealing treatment is 550～610 DEG C.
5. the preparation method of as claimed in claim 1 cmos image sensor, it is characterised in that described cmos image sensor it
The anneal duration that pixel device photodiode area carries out making annealing treatment is 40～80min.
6. the preparation method of as claimed in claim 1 cmos image sensor, it is characterised in that described cmos image sensor it
The annealing temperature that pixel device photodiode area carries out making annealing treatment is 580 DEG C, and anneal duration is 60min.
7. the preparation method of as claimed in claim 1 cmos image sensor, it is characterised in that described cmos image sensor it
Pixel device photodiode area carries out p-type source-drain electrode ion implanting and farther includes photoetching process, ion implantation technology, goes
Except photoresist process.
8. the preparation method of cmos image sensor as claimed in claim 1, it is characterised in that described cmos image sensor
The cmos image sensor white pixel point intermediate value as little as 410 that preparation method is obtained.
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| CN201610693429.2A CN106057842A (en) | 2016-08-19 | 2016-08-19 | Preparation method of CMOS image sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108336105A (en) * | 2018-04-04 | 2018-07-27 | 武汉新芯集成电路制造有限公司 | A kind of imaging sensor and its device proximity structure |
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2016
- 2016-08-19 CN CN201610693429.2A patent/CN106057842A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108336105A (en) * | 2018-04-04 | 2018-07-27 | 武汉新芯集成电路制造有限公司 | A kind of imaging sensor and its device proximity structure |
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