CN106057244B - A kind of EFUSE circuit and programmable storage - Google Patents
A kind of EFUSE circuit and programmable storage Download PDFInfo
- Publication number
- CN106057244B CN106057244B CN201610373144.0A CN201610373144A CN106057244B CN 106057244 B CN106057244 B CN 106057244B CN 201610373144 A CN201610373144 A CN 201610373144A CN 106057244 B CN106057244 B CN 106057244B
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- Prior art keywords
- grid oxygen
- switch
- circuit
- pipe
- divider resistance
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
Abstract
The invention belongs to programming Control field, a kind of EFUSE circuit and programmable storage are provided.In embodiments of the present invention, EFUSE circuit includes divider resistance R1, grid oxygen breakdown pipe and switch S1；Divider resistance R1 and grid oxygen breakdown pipe are serially connected between the first power supply and ground, and the control terminal of grid oxygen breakdown pipe connects second source by switch S1.When unprogrammed, grid oxygen breakdown pipe is equivalent to a capacitor, divides with divider resistance R1, and the common end of divider resistance R1 and grid oxygen breakdown pipe exports high level；When programming, second source exports high electrical breakdown grid oxygen breakdown pipe, it is breakdown after grid oxygen breakdown pipe be equivalent to a resistance, the common end of divider resistance R1 and grid oxygen breakdown pipe exports low level.The embodiment of the present invention realizes the variation of output logical zero and logic 1 using capacitor/voltage characteristic variation of grid oxygen breakdown pipe breakdown front and back, and then realizes programming Control, enhances the reliability of programming.
Description
Technical field
The invention belongs to programming Control field more particularly to a kind of EFUSE circuits and programmable storage.
Background technique
EFUSE (Electrically programmable Fuse, electrically programmable fuse) technology is a kind of extensive use
In the one time programming memory technology of chip interior, the configuration information of memorization COMS clip can be used to, or collected for repairing
At in circuit due to semiconductor technology and inevitably bad element.When chip failure, EFUSE circuit in chip can be with
Defect repair is carried out to chip, when chip run-time error, EFUSE circuit can realize the automatic correction to chip, EFUSE circuit
By corresponding circuit and signal control write-in logical zero or logic 1, it is used to that the corresponding disabling portion circuit of chip is replaced to complete defeated
Enter the operation of logical zero or logic 1.
The method that existing EFUSE technology is all based on greatly more metal layer blown fuses, i.e., by control circuit
Electric current, to control whether fuse fuses to complete the operation of input logic 0 or logic 1, and the blowout current of fuse is with more
A parameter (such as fusing point, room temperature temperature, the quality of fuse, specific heat capacity of fuse of fuse etc.) is related, in different rings
The blowout current of fuse is not quite similar under border, therefore, is programmed control using the method for more metal layer blown fuses
System, reliability are more difficult to control.
And the grid oxygen breakdown technology based on low-voltage device then has very high reliability, for NMOS tube (the 130nm work of 1.2V
Skill low-voltage device below), when the pressure difference of its grid and substrate reaches 2.5V or more, grid oxygen is just bound to breakdown, and MOS
Guan Wei is equivalent to a capacitor when puncturing, and does not leak electricity, metal-oxide-semiconductor is equivalent to a resistance, there is biggish leakage after breakdown
Electricity.
Summary of the invention
The embodiment of the present invention is designed to provide a kind of EFUSE circuit and programmable storage, it is intended to solve tradition
EFUSE technology use more metal layer blown fuses method, reliability problem more rambunctious.
The embodiments of the present invention are implemented as follows, a kind of EFUSE circuit, the EFUSE circuit include: divider resistance R1,
Grid oxygen punctures pipe, switch S1, switch S2 and not circuit；
The divider resistance R1 and the grid oxygen breakdown pipe be serially connected between the first power supply and ground, the divider resistance R1 and
The common end of the grid oxygen breakdown pipe connects the not circuit by the switch S2, and the control terminal of the grid oxygen breakdown pipe passes through
The switch S1 connects second source；
When unprogrammed, the switch S1 is controlled to be disconnected, and the controlled conducting of the switch S2, the grid oxygen breakdown pipe is equivalent to one
A capacitor, the divider resistance R1 and grid oxygen breakdown pipe are divided, the divider resistance R1 and grid oxygen breakdown pipe
Common end output high level (or low level) to described not circuit；
When programming, the controlled conducting of the switch S1, the switch S2 is controlled to be disconnected, and the second source exports a high voltage
To grid oxygen breakdown pipe, the high voltage is greater than the breakdown voltage of grid oxygen breakdown pipe, and the grid oxygen breakdown pipe is breakdown,
Grid oxygen breakdown pipe after breakdown is equivalent to a small resistance, the common end of the divider resistance R1 and grid oxygen breakdown pipe
Low level (or high level) is exported to the not circuit.
Further, the grid oxygen breakdown pipe uses NMOS tube Q1, and the grid of the NMOS tube Q1 passes through the partial pressure electricity
Resistance R1 connects the first power supply, and the drain electrode of the source electrode of the NMOS tube Q1 and the NMOS tube Q1 are connected to ground altogether, the NMOS tube Q1's
Grid is the control terminal that the grid oxygen punctures pipe；
When unprogrammed, the common end of the divider resistance R1 and the NMOS tube Q1 export high level to the NOT gate electricity
Road；
When programming, the common end of the divider resistance R1 and the NMOS tube Q1 export low level to the not circuit.
Further, the grid oxygen breakdown pipe uses PMOS tube Q2, and the grid of the PMOS tube Q2 passes through the partial pressure electricity
R1 ground connection is hindered, the drain electrode of the source electrode of the PMOS tube Q2 and the PMOS tube Q2 are connected to the first power supply altogether, the PMOS tube Q2's
The common end of the drain electrode of source electrode and the PMOS tube Q2 is the control terminal that the grid oxygen punctures pipe；
When unprogrammed, the common end of the divider resistance R1 and the PMOS tube Q2 export low level to the NOT gate electricity
Road；
When programming, the common end of the divider resistance R1 and the PMOS tube Q2 export high level to the not circuit.
Further, the not circuit includes PMOS tube Q3 and NMOS tube Q4, and the source electrode of the PMOS tube Q3 connects described
The grid of first power supply, the grid of the PMOS tube Q3 and the NMOS tube Q4 are connected to the switch S2, the PMOS tube Q3 altogether
Drain electrode connect the drain electrode of the NMOS tube Q4, the source electrode ground connection of the NMOS tube Q4, the drain electrode of the PMOS tube Q3 is described non-
The output end of gate circuit.
The embodiment of the invention also provides a kind of programmable storage, the programmable storage includes EFUSE electricity
Road, the EFUSE circuit include: divider resistance R1, grid oxygen breakdown pipe, switch S1, switch S2 and not circuit；
The divider resistance R1 and the grid oxygen breakdown pipe be serially connected between the first power supply and ground, the divider resistance R1 and
The common end of the grid oxygen breakdown pipe connects the not circuit by the switch S2, and the control terminal of the grid oxygen breakdown pipe passes through
The switch S1 connects second source；
When unprogrammed, the switch S1 is controlled to be disconnected, and the controlled conducting of the switch S2, the grid oxygen breakdown pipe is equivalent to one
A capacitor, the divider resistance R1 and grid oxygen breakdown pipe are divided, the divider resistance R1 and grid oxygen breakdown pipe
Common end output high level (or low level) to described not circuit；
When programming, the controlled conducting of the switch S1, the switch S2 is controlled to be disconnected, and the second source exports a high voltage
To grid oxygen breakdown pipe, the high voltage is greater than the breakdown voltage of grid oxygen breakdown pipe, and the grid oxygen breakdown pipe is breakdown,
Grid oxygen breakdown pipe after breakdown is equivalent to a small resistance, the common end of the divider resistance R1 and grid oxygen breakdown pipe
Low level (or high level) is exported to the not circuit.
Further, the grid oxygen breakdown pipe uses NMOS tube Q1, and the grid of the NMOS tube Q1 passes through the partial pressure electricity
Resistance R1 connects the first power supply, and the drain electrode of the source electrode of the NMOS tube Q1 and the NMOS tube Q1 are connected to ground altogether, the NMOS tube Q1's
Grid is the control terminal that the grid oxygen punctures pipe；
When unprogrammed, the common end of the divider resistance R1 and the NMOS tube Q1 export high level to the NOT gate electricity
Road；
When programming, the common end of the divider resistance R1 and the NMOS tube Q1 export low level to the not circuit.
Further, the grid oxygen breakdown pipe uses PMOS tube Q2, and the grid of the PMOS tube Q2 passes through the partial pressure electricity
R1 ground connection is hindered, the drain electrode of the source electrode of the PMOS tube Q2 and the PMOS tube Q2 are connected to the first power supply altogether, the PMOS tube Q2's
The common end of the drain electrode of source electrode and the PMOS tube Q2 is the control terminal that the grid oxygen punctures pipe；
When unprogrammed, the common end of the divider resistance R1 and the PMOS tube Q2 export low level to the NOT gate electricity
Road；
When programming, the common end of the divider resistance R1 and the PMOS tube Q2 export high level to the not circuit.
Further, stating not circuit includes PMOS tube Q3 and NMOS tube Q4, and the source electrode of the PMOS tube Q3 connects described
The grid of one power supply, the grid of the PMOS tube Q3 and the NMOS tube Q4 are connected to the switch S2 altogether, the PMOS tube Q3's
Drain electrode connects the drain electrode of the NMOS tube Q4, the source electrode ground connection of the NMOS tube Q4, the drain electrode of the PMOS tube Q3 NOT gate electricity
The output end on road.
Further, the programmable storage further include:
It is connect with the output end of the not circuit, the latch that the result of not circuit output is latched.
In embodiments of the present invention, EFUSE circuit includes divider resistance R1, grid oxygen breakdown pipe and switch S1；Divider resistance
R1 and grid oxygen breakdown pipe are serially connected between the first power supply and ground, and the control terminal of grid oxygen breakdown pipe connects second source by switch S1.
When unprogrammed, grid oxygen breakdown pipe is equivalent to a capacitor, divides with divider resistance R1, and divider resistance R1 and grid oxygen puncture pipe
Common end exports high level；When programming, second source export a high electrical breakdown grid oxygen breakdown pipe, it is breakdown after grid oxygen breakdown
Pipe is equivalent to a resistance, the common end output low level of divider resistance R1 and grid oxygen breakdown pipe.The embodiment of the present invention utilizes grid
Capacitor/voltage characteristic of oxygen breakdown pipe breakdown front and back changes the variation to realize output logical zero and logic 1, and then realizes programming
Control, enhances the reliability of programming.
Detailed description of the invention
Fig. 1 is the circuit structure diagram for the EFUSE circuit that first embodiment of the invention provides；
Fig. 2 be another embodiment of the present invention provides EFUSE circuit circuit structure diagram；
Fig. 3 is the circuit structure diagram for the programmable storage that second embodiment of the invention provides；
Fig. 4 be another embodiment of the present invention provides programmable storage circuit structure diagram.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Embodiment one:
The first embodiment of the present invention provides a kind of EFUSE circuit.
Fig. 1 shows the circuit structure diagram of the EFUSE circuit of first embodiment of the invention offer, for ease of description, only
Show part related to the embodiment of the present invention.
A kind of EFUSE circuit, the EFUSE circuit include: divider resistance R1, grid oxygen breakdown pipe 1, switch S1, switch S2
With not circuit 2；
Divider resistance R1 and grid oxygen breakdown pipe 1 are serially connected between the first power vd D and ground, divider resistance R1 and grid oxygen breakdown
The common end of pipe 1 connects not circuit 2 by switch S2, and the control terminal of grid oxygen breakdown pipe 1 meets second source VP by switch S1；
When unprogrammed, switch S1 is controlled to be disconnected, and the controlled conducting of switch S2, grid oxygen breakdown pipe 1 is equivalent to a capacitor, is not had
Electric leakage, divider resistance R1 and grid oxygen breakdown pipe 1 are divided, the high electricity of common end output of divider resistance R1 and grid oxygen breakdown pipe 1
Flat (or low level) to not circuit 2, not circuit 2 is converted to high level (or low level) defeated after low level (or high level)
Out.
When programming, the controlled conducting of switch S1, switch S2 is controlled to be disconnected, and second source VP exports a high voltage to grid oxygen and punctures
Pipe 1, the high voltage are greater than the breakdown voltage of grid oxygen breakdown pipe 1, and grid oxygen breakdown pipe 1 is breakdown, and the grid oxygen after breakdown punctures 1 phase of pipe
When in a small resistance, common end output low level (or high level) of divider resistance R1 and grid oxygen breakdown pipe 1 to not circuit
2, low level (or high level) is converted to high level (or low level) and exported afterwards by not circuit 2.
In the present embodiment, switch S1 and switch S2 is high tension apparatus, and the high voltage of second source VP output is greater than grid
Oxygen punctures the breakdown voltage of pipe 1, but is less than the voltage that switch S1 and switch S2 can bear.
As one embodiment of the invention, grid oxygen punctures pipe 1 and uses NMOS tube Q1, and the grid of NMOS tube Q1 passes through partial pressure electricity
Resistance R1 meets the first power vd D, and the source electrode of NMOS tube Q1 and the drain electrode of NMOS tube Q1 are connected to ground altogether, and the grid of NMOS tube Q1 is grid oxygen
Puncture the control terminal of pipe 1.
When unprogrammed, the common end of divider resistance R1 and NMOS tube Q1 export high level to not circuit 2, not circuit 2
It is exported after high level is converted to low level.
When programming, the common end of divider resistance R1 and NMOS tube Q1 export low level to not circuit 2, and not circuit 2 will
Low transition be high level after export.
As one embodiment of the invention, not circuit 2 includes PMOS tube Q3 and NMOS tube Q4, and the source electrode of PMOS tube Q3 connects
The grid of first power vd D, PMOS tube Q3 and the grid of NMOS tube Q4 are connected to switch S2 altogether, and the drain electrode of PMOS tube Q3 connects NMOS tube
The drain electrode of Q4, the source electrode ground connection of NMOS tube Q4, the drain electrode of PMOS tube Q3 is the output end of not circuit 2.
In the present embodiment, the equivalent resistance after NMOS tube Q1 is breakdown can with breakdown situation difference due to become
Change, logically true in order to guarantee, divider resistance R1 selects larger resistance value as far as possible, and PMOS tube Q3 selects larger size (breadth length ratio),
NMOS tube Q4 selects smaller size, in this way, after breakdown NMOS tube Q1 and divider resistance R1 partial pressure, NMOS tube Q1 and partial pressure electricity
Although the voltage of common end output of R1 is hindered within the scope of one, it is nevertheless believed that its output is low level.
Fig. 2 shows another embodiment of the present invention provides EFUSE circuit circuit structure diagram, for ease of description, only
Show part related to the embodiment of the present invention.
As one embodiment of the invention, grid oxygen punctures pipe 1 and uses PMOS tube Q2, and the grid of PMOS tube Q2 passes through partial pressure electricity
R1 ground connection is hindered, the source electrode of PMOS tube Q2 and the drain electrode of PMOS tube Q2 are connected to the first power vd D, the source electrode and PMOS of PMOS tube Q2 altogether
The common end of the drain electrode of pipe Q2 is the control terminal that grid oxygen punctures pipe 1.
When unprogrammed, the common end of divider resistance R1 and PMOS tube Q2 export low level to not circuit 2, not circuit 2
By low transition be high level after export.
When programming, the common end of divider resistance R1 and PMOS tube Q2 export high level to not circuit 2, and not circuit 2 will
High level exports after being converted to low level.
In the present embodiment, the equivalent resistance after NMOS tube Q1 is breakdown can with breakdown situation difference due to become
Change, logically true in order to guarantee, divider resistance R1 selects larger resistance value as far as possible, and PMOS tube Q3 selects smaller size (breadth length ratio),
NMOS tube Q4 selects larger size, in this way, after breakdown NMOS tube Q1 and divider resistance R1 partial pressure, NMOS tube Q1 and partial pressure electricity
Although the voltage of common end output of R1 is hindered within the scope of one, it is nevertheless believed that its output is high level.
Second embodiment:
Second embodiment of the invention provides a kind of programmable storage.
Fig. 3 shows the circuit structure diagram of the programmable storage of second embodiment of the invention offer, for the ease of saying
Bright, only parts related to embodiments of the present invention are shown.
A kind of programmable storage, the programmable storage include EFUSE circuit, and the EFUSE circuit includes:
Divider resistance R1, grid oxygen breakdown pipe 1, switch S1, switch S2 and not circuit 2；
Divider resistance R1 and grid oxygen breakdown pipe 1 are serially connected between the first power vd D and ground, divider resistance R1 and grid oxygen breakdown
The common end of pipe 1 connects not circuit 2 by switch S2, and the control terminal of grid oxygen breakdown pipe 1 meets second source VP by switch S1；
When unprogrammed, switch S1 is controlled to be disconnected, and the controlled conducting of switch S2, grid oxygen breakdown pipe 1 is equivalent to a capacitor, is not had
Electric leakage, divider resistance R1 and grid oxygen breakdown pipe 1 are divided, the high electricity of common end output of divider resistance R1 and grid oxygen breakdown pipe 1
Flat (or low level) to not circuit 2, not circuit 2 is converted to high level (or low level) defeated after low level (or high level)
Out.
When programming, the controlled conducting of switch S1, switch S2 is controlled to be disconnected, and second source VP exports a high voltage to grid oxygen and punctures
Pipe 1, the high voltage are greater than the breakdown voltage of grid oxygen breakdown pipe 1, and grid oxygen breakdown pipe 1 is breakdown, and the grid oxygen after breakdown punctures 1 phase of pipe
When in a small resistance, common end output low level (or high level) of divider resistance R1 and grid oxygen breakdown pipe 1 to not circuit
2, low level (or high level) is converted to high level (or low level) and exported afterwards by not circuit 2.
In the present embodiment, switch S1 and switch S2 is high tension apparatus, and the high voltage of second source VP output is greater than grid
Oxygen punctures the breakdown voltage of pipe 1, but is less than the voltage that switch S1 and switch S2 can bear.
As one embodiment of the invention, grid oxygen punctures pipe 1 and uses NMOS tube Q1, and the grid of NMOS tube Q1 passes through partial pressure electricity
Resistance R1 meets the first power vd D, and the source electrode of NMOS tube Q1 and the drain electrode of NMOS tube Q1 are connected to ground altogether, and the grid of NMOS tube Q1 is grid oxygen
Puncture the control terminal of pipe 1.
When unprogrammed, the common end of divider resistance R1 and NMOS tube Q1 export high level to not circuit 2, not circuit 2
It is exported after high level is converted to low level.
When programming, the common end of divider resistance R1 and NMOS tube Q1 export low level to not circuit 2, and not circuit 2 will
Low transition be high level after export.
As one embodiment of the invention, not circuit 2 includes PMOS tube Q3 and NMOS tube Q4, and the source electrode of PMOS tube Q3 connects
The grid of first power vd D, PMOS tube Q3 and the grid of NMOS tube Q4 are connected to switch S2 altogether, and the drain electrode of PMOS tube Q3 connects NMOS tube
The drain electrode of Q4, the source electrode ground connection of NMOS tube Q4, the drain electrode of PMOS tube Q3 is the output end of not circuit 2.
In the present embodiment, the equivalent resistance after NMOS tube Q1 is breakdown can with breakdown situation difference due to become
Change, logically true in order to guarantee, divider resistance R1 selects larger resistance value as far as possible, and PMOS tube Q3 selects larger size (breadth length ratio),
NMOS tube Q4 selects smaller size, in this way, after breakdown NMOS tube Q1 and divider resistance R1 partial pressure, NMOS tube Q1 and partial pressure electricity
Although the voltage of common end output of R1 is hindered within the scope of one, it is nevertheless believed that its output is low level.
As one embodiment of the invention, the programmable storage further include: the output end of NAND gate circuit 2 connects
It connects, the latch 3 that the result that not circuit 2 exports is latched.
In the present embodiment, the result that latch 3 exports not circuit 2 when the first power vd D is powered on is read out
And save, and after the first power vd D power-off, the data stored in latch 3 can't lose.
Fig. 4 show another embodiment of the present invention provides programmable storage circuit structure diagram, for the ease of saying
Bright, only parts related to embodiments of the present invention are shown.
As one embodiment of the invention, grid oxygen punctures pipe 1 and uses PMOS tube Q2, and the grid of PMOS tube Q2 passes through partial pressure electricity
R1 ground connection is hindered, the source electrode of PMOS tube Q2 and the drain electrode of PMOS tube Q2 are connected to the first power vd D, the source electrode and PMOS of PMOS tube Q2 altogether
The common end of the drain electrode of pipe Q2 is the control terminal that grid oxygen punctures pipe 1.
When unprogrammed, the common end of divider resistance R1 and PMOS tube Q2 export low level to not circuit 2, not circuit 2
By low transition be high level after export.
When programming, the common end of divider resistance R1 and PMOS tube Q2 export high level to not circuit 2, and not circuit 2 will
High level exports after being converted to low level.
In the present embodiment, the equivalent resistance after NMOS tube Q1 is breakdown can with breakdown situation difference due to become
Change, logically true in order to guarantee, divider resistance R1 selects larger resistance value as far as possible, and PMOS tube Q3 selects smaller size (breadth length ratio),
NMOS tube Q4 selects larger size, in this way, after breakdown NMOS tube Q1 and divider resistance R1 partial pressure, NMOS tube Q1 and partial pressure electricity
Although the voltage of common end output of R1 is hindered within the scope of one, it is nevertheless believed that its output is high level.
In embodiments of the present invention, EFUSE circuit includes divider resistance R1, grid oxygen breakdown pipe and switch S1；Divider resistance
R1 and grid oxygen breakdown pipe are serially connected between the first power supply and ground, and the control terminal of grid oxygen breakdown pipe connects second source by switch S1.
When unprogrammed, grid oxygen breakdown pipe is equivalent to a capacitor, divides with divider resistance R1, and divider resistance R1 and grid oxygen puncture pipe
Common end exports high level；When programming, second source export a high electrical breakdown grid oxygen breakdown pipe, it is breakdown after grid oxygen breakdown
Pipe is equivalent to a resistance, the common end output low level of divider resistance R1 and grid oxygen breakdown pipe.The embodiment of the present invention utilizes grid
Capacitor/voltage characteristic of oxygen breakdown pipe breakdown front and back changes the variation to realize output logical zero and logic 1, and then realizes programming
Control, enhances the reliability of programming.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (7)
1. a kind of EFUSE circuit, which is characterized in that the EFUSE circuit includes: divider resistance R1, grid oxygen breakdown pipe, switch
S1, switch S2 and not circuit；
The divider resistance R1 and grid oxygen breakdown pipe are serially connected between the first power supply and ground, the divider resistance R1 and described
The common end of grid oxygen breakdown pipe connects the not circuit by the switch S2, and the control terminal of the grid oxygen breakdown pipe passes through described
Switch S1 connects second source；
When unprogrammed, the switch S1 is controlled to be disconnected, and the controlled conducting of the switch S2, the grid oxygen breakdown pipe is equivalent to an electricity
Hold, the divider resistance R1 and grid oxygen breakdown pipe are divided, the public affairs of the divider resistance R1 and grid oxygen breakdown pipe
End exports high level to the not circuit altogether；
When programming, the controlled conducting of the switch S1, the switch S2 is controlled to be disconnected, and the second source exports a high voltage to institute
Grid oxygen breakdown pipe is stated, the high voltage is greater than the breakdown voltage of grid oxygen breakdown pipe, and the grid oxygen breakdown pipe is breakdown, breakdown
Grid oxygen breakdown pipe afterwards is equivalent to a small resistance, the common end output of the divider resistance R1 and grid oxygen breakdown pipe
Low level is to the not circuit；
The switch S1 and switch S2 is high tension apparatus, and the high voltage of the second source output is less than the switch S1
The voltage that can bear with the switch S2.
2. EFUSE circuit as described in claim 1, which is characterized in that the grid oxygen breakdown pipe uses NMOS tube Q1, described
The grid of NMOS tube Q1 connects the first power supply by the divider resistance R1, and the source electrode of the NMOS tube Q1 is with the NMOS tube Q1's
Drain electrode is connected to ground altogether, and the grid of the NMOS tube Q1 is the control terminal that the grid oxygen punctures pipe；
When unprogrammed, the common end of the divider resistance R1 and the NMOS tube Q1 export high level to the not circuit；
When programming, the common end of the divider resistance R1 and the NMOS tube Q1 export low level to the not circuit.
3. EFUSE circuit as described in claim 1, which is characterized in that the not circuit includes PMOS tube Q3 and NMOS tube
Q4, the source electrode of the PMOS tube Q3 connect first power supply, and the grid of the grid of the PMOS tube Q3 and the NMOS tube Q4 are total
It is connected to the switch S2, the drain electrode of the PMOS tube Q3 connects the drain electrode of the NMOS tube Q4, and the source electrode of the NMOS tube Q4 is grounded,
The drain electrode of the PMOS tube Q3 is the output end of the not circuit.
4. a kind of programmable storage, which is characterized in that the programmable storage includes EFUSE circuit, the EFUSE
Circuit includes: divider resistance R1, grid oxygen breakdown pipe, switch S1, switch S2 and not circuit；
The divider resistance R1 and grid oxygen breakdown pipe are serially connected between the first power supply and ground, the divider resistance R1 and described
The common end of grid oxygen breakdown pipe connects the not circuit by the switch S2, and the control terminal of the grid oxygen breakdown pipe passes through described
Switch S1 connects second source；
When unprogrammed, the switch S1 is controlled to be disconnected, and the controlled conducting of the switch S2, the grid oxygen breakdown pipe is equivalent to an electricity
Hold, the divider resistance R1 and grid oxygen breakdown pipe are divided, the public affairs of the divider resistance R1 and grid oxygen breakdown pipe
End exports high level to the not circuit altogether；
When programming, the controlled conducting of the switch S1, the switch S2 is controlled to be disconnected, and the second source exports a high voltage to institute
Grid oxygen breakdown pipe is stated, the high voltage is greater than the breakdown voltage of grid oxygen breakdown pipe, and the grid oxygen breakdown pipe is breakdown, breakdown
Grid oxygen breakdown pipe afterwards is equivalent to a small resistance, the common end output of the divider resistance R1 and grid oxygen breakdown pipe
Low level is to the not circuit；
The switch S1 and switch S2 is high tension apparatus, and the high voltage of the second source output is less than the switch S1
The voltage that can bear with the switch S2.
5. programmable storage as claimed in claim 4, which is characterized in that the grid oxygen breakdown pipe uses NMOS tube Q1,
The grid of the NMOS tube Q1 connects the first power supply, the source electrode of the NMOS tube Q1 and the NMOS tube by the divider resistance R1
The drain electrode of Q1 is connected to ground altogether, and the grid of the NMOS tube Q1 is the control terminal that the grid oxygen punctures pipe；
When unprogrammed, the common end of the divider resistance R1 and the NMOS tube Q1 export high level to the not circuit；
When programming, the common end of the divider resistance R1 and the NMOS tube Q1 export low level to the not circuit.
6. programmable storage as claimed in claim 4, which is characterized in that the not circuit include PMOS tube Q3 and
NMOS tube Q4, the source electrode of the PMOS tube Q3 connect first power supply, the grid of the PMOS tube Q3 and the NMOS tube Q4's
Grid is connected to the switch S2 altogether, and the drain electrode of the PMOS tube Q3 connects the drain electrode of the NMOS tube Q4, the source of the NMOS tube Q4
Pole ground connection, the output end of the drain electrode not circuit of the PMOS tube Q3.
7. programmable storage as claimed in claim 6, which is characterized in that the programmable storage further include:
It is connect with the output end of the not circuit, the latch that the result of not circuit output is latched.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610373144.0A CN106057244B (en) | 2016-05-30 | 2016-05-30 | A kind of EFUSE circuit and programmable storage |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610373144.0A CN106057244B (en) | 2016-05-30 | 2016-05-30 | A kind of EFUSE circuit and programmable storage |
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| CN106057244B true CN106057244B (en) | 2019-11-26 |
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|---|---|---|---|---|
| CN116564370A (en) * | 2022-01-29 | 2023-08-08 | 华为技术有限公司 | Power supply switching circuit and one-time programmable memory |
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| CN102201392A (en) * | 2010-03-26 | 2011-09-28 | 海力士半导体有限公司 | Electric fuse circuit and method of operating the same |
| CN102446899A (en) * | 2010-10-01 | 2012-05-09 | 瑞萨电子株式会社 | Semiconductor device |
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