CN106054300B - A kind of CO2Gas detection binary channels infrared fileter and preparation method thereof - Google Patents
A kind of CO2Gas detection binary channels infrared fileter and preparation method thereof Download PDFInfo
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- 238000001514 detection method Methods 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000002834 transmittance Methods 0.000 claims abstract description 10
- 239000012528 membrane Substances 0.000 claims abstract description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 28
- 230000003287 optical effect Effects 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 10
- 238000001228 spectrum Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 230000000747 cardiac effect Effects 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 27
- 239000010408 film Substances 0.000 description 19
- 230000005540 biological transmission Effects 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N2021/3595—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using FTIR
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- Chemical & Material Sciences (AREA)
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Abstract
The present invention relates to infrared fileters, and in particular to a kind of CO2Gas detection binary channels infrared fileter and preparation method thereof.Base material selects single crystalline Si, refractive index n=3.42881；High-index material selects Ge, refractive index n=4.16422；Low-index material selects SiO, refractive index n=1.81312；Deposit the membrane system of different centre wavelengths respectively on two surfaces of substrate.4260nm and 2780nm binary channels infrared fileter provided by the invention, two peak transmittances up to more than 90%, greatly improve signal-to-noise ratio, inhibit the interference of other gases well, improve instrument detection accuracy and efficiency.
Description
Technical field
The present invention relates to infrared fileters, and in particular to a kind of CO2Gas detection binary channels infrared fileter and its system
Preparation Method.
Background technology
It is required in metallurgy, aerospace, agricultural, medical treatment, environmental protection etc. to CO2Concentration carry out quantitative detection and control
System, and application environment is very severe in many cases, such as inflammable and explosive, high temperature, high pressure, has magnetic field occasion.Therefore, it develops
Stability is good, selectivity is good, high sensitivity, miniaturized and portable CO2Gas sensor has very high practical value.
Infrared spectrum analyser is the instrument that gas content is measured using gas infrared signature absorption peak, selects the red of specific wavelength
Outer gas analysis filter is the critical component of infrared gas analyser.The light that light source is sent out obtains certain after optical filter
The quasi-monochromatic light (the narrower degree of monochromaticity of bandwidth is better) of bandwidth, after which is actually taken up by gas by gas sample cell, is examined by detector
Survey output intensity.Due to CO2Gas has stronger characteristic absorption spectrum in certain wave strong point, by probe gas to specific wavelength
The attenuation of infrared spectrum can calculate its CO2Content.
According to data-searching, such as document " research of woods Zhe .TPS2534 new infrared gas concentration sensors and application electricity
Big science and engineering, 2011,246 (1):10-12. " TPS2534 new infrared gas concentration sensors are more and more to be applied to infrared-gas
In the production and design of Concentration Testing instrument.For CO2Gas concentration detects, main to select TPS2534G2 models optical filter peace
Mounted in the sensing window of TPS2534 sensors, centre wavelength is 4.26 μm, centre wavelength deviation ± 1%, halfwidth for 180 ±
20nm, halfwidth/centre wavelength are 4.2%, and peak transmission is more than 73%." 4.26 microns of Chinese patent ZL95244862.9
For spike filter " using white stone as substrate, ZnSe and ZnTi are high low-index material, design central wavelength lambda 0=4.26 ±
0.01 μm, halfwidth λ 0.50=0.14 ± 0.02 μm, 0.10/ Δ λ 0.00≤1.4 of form factor η=Δ λ, peak transmission
The 4260nm spike filters of Tmax >=70%.
But the equal single bandpass optical filter of above two optical filter, and passband is wider, cut-off wave band is not wide enough, peak transmission
It is relatively low, so measurement accuracy, stability and jamproof ability are also to be hoisted, poor sensitivity, it is impossible to meet market hair
The needs of exhibition.
Invention content
A kind of binary channels and peak transmittance are provided the purpose of the present invention is to solve above-mentioned the deficiencies in the prior art
Height can greatly improve signal-to-noise ratio, effectively detect CO2Binary channels band logical infrared fileter of gas and preparation method thereof.
To achieve these goals, a kind of CO designed by the present invention2Gas detection with binary channels infrared fileter and its
Preparation method, it is characterized in that：
(1) substrate, silicon twin polishing, 300 ± 10 μm of thickness, crystal orientation are made using single crystalline Si<100>.
(2) Coating Materials selection silicon monoxide SiO and monocrystalline germanium Ge, multi-coated interference is deposited on two surfaces of substrate respectively
Film.
(3) wherein a face film structure uses： Air/
0.54L0.39H1.1L0.64H1.45L5.61H1.5L0.27H1.1L1.17H0.97L3.99H0.97L1.22H0.517L1.89
H1.128L5.91HL1.4H1.48L1.9H1.43L1.38H0.04L1.27H1.51L1.524H1.175L0.2H1.32L1.352
H1 .53L1.34H1.28L/Sub, central wavelength lambda1=4260nm.
(4) another side film structure uses： Air/
1.6L1.44H0.34L4.32H0.88L0.92H0.95L0.99H1.03L0.22H0.11L1.728H0.96L0.97H0.87L1.
06H2.53L6.16H1.38L0.65H0.41L/Sub, central wavelength lambda2=2780nm.
Symbol meaning is respectively in membrane system：Sub is substrate, and Air is air, and H and L represent film layer Ge (high refractive indexes respectively
Material layer) and film layer SiO (low refractive index material layer) 1/4 wave optical thickness, centre wavelength is respectively λ1=
4260nm, λ2=2780nm, 1H=(4nHd)/λ；1L=(4nLD)/λ, number is the thickness coefficient of film layer in structural formula.
A kind of above-mentioned CO2Gas detection binary channels infrared fileter and preparation method thereof, using crystal silicon Si as substrate, one
Silicon oxide sio and germanium Ge are Coating Materials, prepare film plating layer using the method for vacuum thermal evaporation thin film deposition, Ge selects electronics
Beam is deposited, deposition rate 8SiO selects porous molybdenum boat resistance heating vapor deposition, deposition rate 40Start to steam
It is 1.0 × 10 to plate vacuum degree-3Pa, depositing temperature are 200 DEG C.
A kind of above-mentioned CO2Gas detection binary channels infrared fileter and preparation method thereof, using optical monitor control
Layer thickness is film-made, and is aided with quartz-crystal control control deposition rate.
A kind of above-mentioned CO2Gas detection binary channels infrared fileter and its 4260nm and 2780nm being prepared
Dual band pass infrared fileter；Air/ of the centre wavelength for 4260nm is used on one side
0.54L0.39H1.1L0.64H1.45L5.61H1.5L0.27H1.1L1.17H0.97L3.99H0.97L1.22H0.517L
1.89H1.128L5.91HL1.4H1.48L1.9H1.43L1.38H0.04L1.27H1.51L1.524H1.175L0.2H1.32
L1.352H1.53L1.34H1.28L/Sub film structures realize that 2750nm~2800nm and 4150nm~4350nm wave bands are high
Transmission, and in addition to the passband of centre wavelength 2780nm bandwidth 75nm, all cut from remaining spectrum in the range of 2000~3500nm
Only；Another side uses Air/ of the centre wavelength for 2780nm
1.6L1.44H0.34L4.32H0.88L0.92H0.95L0.99H1.03L0.22H0.11L1.728H0.96L0.97H0.8
7L1.06H2.53L6.16H1.38L0.65H0.41L/Sub film structure, realization 4200nm~4300nm and 2700nm~
2840nm wave bands are highly transmissive, and in addition to the passband of centre wavelength 4260nm bandwidth 140nm, in the range of 3500~8500nm
Remaining spectrum all ends；Two sides coordinates, final to realize, 4240nm~4280nm and 2750nm~2800nm wave bands are average saturating
Rate is crossed not less than 92%, halfwidth is respectively 145nm and 75nm, except centre wavelength 4260nm and 2780nm bandwidth 140nm and
Outside the passband of 75nm, all end from remaining spectrum in the range of 2000~8500nm, 2000nm~2700nm average transmittances
It is that 0.112%, 4400nm~8500nm average transmittances are for 0.089%, 2840nm~4100nm average transmittances
0.019%, signal-to-noise ratio can be greatly improved, can be very good to inhibit the interference of other gases, product optical property and physics are strong
Degree is well positioned to meet actual operation requirements, is widely used in CO2Gas infrared acquisition instrument improves instrument detection accuracy and effect
Can, can accomplish more rapidly, more accurately confirm leakage point.
Compared with the prior art, the present invention has the following advantages：
1st, Double-channel optical filter and tradition CO2Detection is compared with optical filter, and tool is CO there are two transmission narrowband2's
Characteristic absorption wave band can effectively improve the measurement sensitivity and precision of instrument.
2nd, for Double-channel optical filter compared with traditional technology method, the narrowband that there is centre wavelength to be 4260nm and 2780nm is saturating
Spectrum is crossed, the rising edge and failing edge of transmission bands are precipitous, and waveform rectangular degree is good, peak transmittance>90%th, end in cut-off region
Depth<0.1%, therefore the transmission that effective service band of 4260nm and 2780nm can be as big as possible, and remaining invalid wave band
Background noise then greatly reduce, thus excellent signal-to-noise ratio can be obtained, improve the measurement sensitivity and precision of instrument.
3rd, the filter technology that prepared by the present invention is simple, can form batch production, and performance is stablized, and meets high-precision CO2
The performance requirement of gas infrared acquisition instrument.
Description of the drawings
Fig. 1 is CO of the present invention2The structure diagram of gas detection binary channels infrared fileter；
Wherein：Substrate 1 is single crystalline Si, and film material 2 is Ge, and film material 3 is SiO.
Fig. 2 is Double-channel optical filter final performance measured curve figure.
Specific embodiment
The present invention is further described with reference to the accompanying drawings and examples.
Embodiment 1：
As shown in Figure 1, a kind of CO provided in this embodiment2Gas detection binary channels infrared fileter and preparation method thereof
It is：
(1) size is used to make substrate, silicon twin polishing, 300 ± 10 μm of thickness, crystal orientation for the single crystalline Si of Φ 50.8<100>.
(2) Coating Materials selection silicon monoxide SiO and monocrystalline germanium Ge, multi-coated interference is deposited on two surfaces of substrate respectively
Film.
(3) wherein a face film structure uses： Air/0.54L0.39H1.1L0.64H1.45L5.61H1.5L0.27H1.
1L1.17H0.97L3.99H0.97L1.22H0.517L1.89 H1.128L5.91HL1.4H1.48L1.9H1.43L1.38H0.
04L1.27H1.51L1.524H1.175L0.2H1.32L1.352H1 .53L1.34H1.28L/Sub, central wavelength lambda1=
4260nm。
(4) another side film structure uses： Air/1.6L1.44H0.34L4.32H0.88L0.92H0.95L0.99H1.
03L0.22H0.11L1.728H0.96L0.97H0.87L1. 06H2.53L6.16H1.38L0.65H0.41L/Sub, middle cardiac wave
Long λ2=2780nm.
Symbol meaning is respectively in membrane system：Sub is substrate, and Air is air, and H and L represent film layer Ge (high refractive indexes respectively
Material layer) and film layer SiO (low refractive index material layer) 1/4 wave optical thickness, centre wavelength is respectively λ1=
4260nm, λ2=2780nm, 1H=(4nHd)/λ；1L=(4nLD)/λ, number is the thickness coefficient of film layer in structural formula.
A kind of CO provided in this embodiment2Gas detection binary channels infrared fileter and preparation method thereof, with monocrystalline silicon
Si is substrate, and silicon monoxide SiO and germanium Ge are Coating Materials, and film plating layer is prepared using the method for vacuum thermal evaporation thin film deposition,
Ge selects electron beam evaporation plating, deposition rate 8SiO selects porous molybdenum boat resistance heating vapor deposition, deposition rate 40It is 1.0 × 10 to start that vacuum degree is deposited-3Pa, depositing temperature are 200 DEG C.
Due to specifically how to evaporate using electron gun evaporation and being those skilled in the art using resistance heating evaporation plated film
The routine techniques grasped, no further details to be given herein.
A kind of Double-channel optical filter provided in this embodiment uses is coated with Air/0.54L0.39H1.1L0.64H1. on one side
45L5.61H1.5L0.27H1.1L1.17H0.97L3.99H0.97L1.22H0.517L 1.89H1.128L5.91HL1.4H1.
48L1.9H1.43L1.38H0.04L1.27H1.51L1.524H1.175L0.2H1.32 L1.352H1.53L1.34H1.28L/
Sub membrane systems realize that 4200nm~4300nm and 2700nm~2840nm wave bands are highly transmissive, and except centre wavelength 4260nm bandwidth
Outside the passband of 140nm, all end from remaining spectrum in the range of 3500~8500nm；Another side Air/
1.6L1.44H0.34L4.32H0.88L0.92H0.95L0.99H1.03L0.22H0.11L1.728H0.96L0.
97H0.8 7L1.06H2.53L6.16H1.38L0.65H0.41L/Sub membrane systems, realization 2750nm~2800nm and 4150nm~
4350nm wave bands are highly transmissive, and in addition to the passband of centre wavelength 2780nm bandwidth 75nm, from its in the range of 2000~3500nm
The all cut-offs of remaining light spectrum.
CO provided in this embodiment2Gas detection binary channels infrared fileter, the centre wavelength of two narrowband position
Precision controls thicknesses of layers within 0.4%, to membrane system using optical monitor, and is aided with quartz-crystal control control deposition speed
Rate.
Prepared optical filter is surveyed using German 70 type Fourier infrared spectrographs of Bruker companies VERTEX
Examination.The optical filter final performance measured curve figure of this optical filter final performance structure such as Fig. 2：
1. central wavelength lambda1=4260nm, λ2=2780nm；
2. bandwidth Delta lambda1=140nm, Δ λ2=75nm；
3. form factor Δ λ1 (10%)/Δλ1 (50%)=1.28, Δ λ2 (10%)/Δλ2 (50%)=1.33；
4. peak transmittance Tp1=92.92%, Tp2=92.84%；
5. 2000~8500nm T in addition to passbandavg≤ 0.1%.
The above is only presently preferred embodiments of the present invention, not the present invention is imposed any restrictions, every according to the present invention
Any simple modification, change and the equivalent structure transformation that technical spirit makees above example, still fall within skill of the present invention
In the protection domain of art scheme.
Claims (4)
1. a kind of CO2Gas detection binary channels infrared fileter, it is characterised in that：
(1) substrate, silicon twin polishing, 300 ± 10 μm of thickness, crystal orientation are made using single crystalline Si<100>；
(2) Coating Materials selects silicon monoxide SiO and monocrystalline germanium Ge, and it is thin to deposit multi-coated interference respectively on two surfaces of substrate
Film；
(3) wherein a face film structure uses：Air/0.54L0.39H1.1L0.64H1.45L5.61H1.5L0.27H1.1L1.
17H0.97L3.99H0.97L1.22H0.517L1.89H1.128L5.91HL1.4H1.48L1.9H1.43L1.38H0.04L1.2
7H1.51L1.524H1.175L0.2H1.32L1.352H1.53L1.34H1.28L/Sub, central wavelength lambda1=4260nm；
(4) another side film structure uses：Air/1.6L1.44H0.34L4.32H0.88L0.92H0.95L0.99H1.03L0.
22H0.11L1.728H0.96L0.97H0.87L1.06H2.53L6.16H1.38L0.65H0. 41L/Sub, central wavelength lambda2=
2780nm；
Symbol meaning is respectively in membrane system：Sub is substrate, and Air is air, H and L represent respectively high-index material film layer Ge and
1/4 wave optical thickness of low-index material film layer SiO, centre wavelength is respectively λ1=4260nm, λ2=2780nm,
1H=(4nHd)/λ；1L=(4nLD)/λ, number is the thickness coefficient of film layer in structural formula.
2. a kind of CO as described in claim 12Gas detection binary channels infrared fileter, it is characterised in that：Using Vacuum Heat
The method of thin evaporated film deposition prepares film plating layer, and Ge selects electron beam evaporation plating, and deposition rate isSiO selects porous molybdenum
Boat resistance heating is deposited, and deposition rate isIt is 1.0 × 10 to start that vacuum degree is deposited-3Pa, depositing temperature are 200 DEG C.
3. a kind of CO as claimed in claim 22Gas detection binary channels infrared fileter, it is characterised in that：It is supervised using optics
Control method controls thicknesses of layers, and is aided with quartz-crystal control control deposition rate.
4. a kind of CO as described in claim 12Gas detection binary channels infrared fileter, it is characterised in that：In using on one side
The Air/0.54L0.39H1.1L0.64H1.45L5.61H1.5L0.27H1.1L1.17H0.97L 3. of a length of 4260nm of cardiac wave
99H0.97L1.22H0.517L1.89H1.128L5.91HL1.4H1.48L1.9H1.43L1.38H0.04L1.27H1.51L1.5
24H1.175L0.2H1.32L1.352H1.53L1.34H1.28L/Sub film structures, realize 2750nm~2800nm and
4150nm~4350nm wave bands are highly transmissive, and in addition to the passband of centre wavelength 2780nm bandwidth 75nm, from 2000~3500nm models
Remaining spectrum in enclosing all ends；Another side uses Air/ of the centre wavelength for 2780nm
1.6L1.44H0.34L4.32H0.88L0.92H0.95L0.99H1.03L0.22H0.11L1.728H0.96L0.97H0.87L1.
06H2.53L6.16H1.38L0.65H0.41L/Sub film structures realize 4200nm~4300nm and 2700nm~2840nm waves
Section is highly transmissive, and in addition to the passband of centre wavelength 4260nm bandwidth 140nm, complete from remaining spectrum in the range of 3500~8500nm
End in portion；Two sides coordinates, and final to realize, 4240nm~4280nm and 2750nm~2800nm wave band mean transmissivities are not less than
92%, halfwidth is respectively 145nm and 75nm, in addition to the passband of centre wavelength 4260nm and 2780nm bandwidth 140nm and 75nm,
All to end from remaining spectrum in the range of 2000~8500nm, 2000nm~2700nm average transmittances are 0.089%,
2840nm~4100nm average transmittances are that 0.112%, 4400nm~8500nm average transmittances are 0.019%, can be greatly
Improve signal-to-noise ratio.
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| CN106990466B (en) * | 2017-04-24 | 2020-01-24 | 江苏大学 | Narrow-band optical filter and preparation method thereof |
| CN108801967B (en) * | 2018-06-21 | 2021-06-15 | 长春理工大学 | Double-passband filter device, infrared thermal imaging detection system and method for detecting methane |
| JP7190971B2 (en) * | 2018-08-29 | 2022-12-16 | 旭化成エレクトロニクス株式会社 | NDIR gas sensor and optical device |
| US11346775B2 (en) | 2018-08-29 | 2022-05-31 | Asahi Kasei Microdevices Corporation | NDIR gas sensor and optical device |
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| CN202275177U (en) * | 2012-03-12 | 2012-06-13 | 杭州麦乐克电子科技有限公司 | 4260-nanometer band-pass infrared optical filter |
| CN103713344A (en) * | 2013-11-29 | 2014-04-09 | 杭州麦乐克电子科技有限公司 | Nitric oxide gas detection filter with central wavelength of 4580 nm |
| CN103713349A (en) * | 2013-11-29 | 2014-04-09 | 杭州麦乐克电子科技有限公司 | Medical infrared gas detection and analysis filter with central wavelength of 6557 nm |
| CN203551825U (en) * | 2013-11-29 | 2014-04-16 | 杭州麦乐克电子科技有限公司 | Aviation tail gas detection optical filter with central wavelength of 2700 nm |
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