CN106048533B - A kind of preparation method of SmCo alloy magnetostriction film - Google Patents
A kind of preparation method of SmCo alloy magnetostriction film Download PDFInfo
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- CN106048533B CN106048533B CN201610475905.3A CN201610475905A CN106048533B CN 106048533 B CN106048533 B CN 106048533B CN 201610475905 A CN201610475905 A CN 201610475905A CN 106048533 B CN106048533 B CN 106048533B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
A kind of preparation method of SmCo alloy magnetostriction film, with metal alloy Sm2Co17Target is as sputtering target material, high density SmCo alloy atom gas is generated by the magnetically controlled DC sputtering of cluster-beam deposition system, cluster is gradually grown into argon gas constant collision in the buffer, pass sequentially through first order nozzle, second level air pressure differential system, second level nozzle, third level air pressure differential system and third level nozzle, it is deposited on substrate, in-situ annealing after deposition.SmCo alloy magnetostriction film prepared by the present invention, particle size is uniform, and the size Control of particle is being less than alloy single magnetic domain critical dimension, film has excellent magnetism characteristic, magnetostrictive effect is obvious, and under the magnetic field of 6400Oe, magnetostriction coefficient is 92 × 10‑6, at a temperature of 700K after in-situ annealing, magnetostriction coefficient is 145 × 10‑6。
Description
Technical field
The invention belongs to film magnetostriction materials fields, are related to a kind of preparation method of SmCo alloy firm, especially relate to
And a kind of preparation method of the SmCo alloy firm with magnetostrictive effect.
Background technique
Magnetostrictive effect is exactly under external magnetic field, and magnetic material is due to caused by the change of itself magnetized state
External magnetic field is removed in the variation of the shape and size of material, then is restored to the behavior of original shape and size again.Magnetostriction is thin
Film can be widely applied to microsensor and microdrive, and piezomagnetic coefficient of the film under downfield is bigger, the low field magnetic of film
Quick property is higher, and the sensitivity of sensor and driver is higher, this is to film magnetostriction coefficient and film under downfield
Magnetostriction proposes higher requirement.
Currently, noncrystal membrane technology of preparing have been relatively mature, but due to noncrystal membrane magnetocrystalline with higher
The opposite sex will can be only achieved saturation magnetostriction under higher excitation field, be unfavorable for the application in microdevice.It is another
Thinking is that the nano thin-film that assembling has magnetostrictive effect is deposited by low energy Cluster Beam using zero dimensional nanometer materials,
But larger coercive field as existing for it, it is difficult to obtain higher magnetostriction coefficient, it is difficult to realize that the production of commercialization is answered
With.
Summary of the invention
It is an object of the invention to overcome the deficiencies of existing technologies, provide a kind of operating procedure is easy, cluster size is consistent,
The preparation method of good, high production efficiency the SmCo alloy magnetostriction film of magnetism characteristic.
To achieve the above object, present invention employs following technical solutions:
A kind of preparation method of SmCo alloy magnetostriction film, comprising the following steps:
(1) metal alloy Sm is selected2Co17Target is as sputtering target material；
(2) it is fixed on block substrate 5 after cleaning substrate 6, and is sealed in the fourth stage air pressure of cluster-beam deposition system
In differential system d；
(3) using mechanical pump and molecular pump to fourth stage air pressure differential system d forvacuum, make its pressure be no more than 3 ×
10-5Pa；
(4) argon gas is passed through into cluster source chamber A and buffer area B as sputter gas by sputter gas entrance 1, makes its pressure
Reach by force and be maintained at 50~100Pa；High density SmCo alloy is generated by the magnetically controlled DC sputtering of cluster-beam deposition system
Atom gas；
(5) buffer length of buffer area B is set as 100~260mm；SmCo alloy atom gas in the B of buffer area by with
Argon gas constant collision gradually grows into cluster, and the cluster of formation is carried by air-flow, passes sequentially through first order nozzle 10, second level gas
Pressure difference subsystem b, second level nozzle 9, third level air pressure differential system c and third level nozzle 4 form the cluster of orientation and collimation
Line；
(6) Cluster Beam aligning substrate 6 is deposited, deposition rate 0.1nm/s, and sedimentation time is 100-150 minutes,
The Clusters Films formed on substrate 6 are with a thickness of 600~900nm；
(7) after depositing, Clusters Films are in-situ annealing 5~10 minutes at a temperature of protecting gas atmosphere and 500~800K.
Further, substrate 6 described in step (2) is single crystalline Si (100).
Further, the power supply of cluster-beam deposition system described in step (4) is DC power supply, and the operating current of power supply is set
It is set to 135mA, the sputtering power of cluster-beam deposition system is set as 71W.
Further, the kinetic energy when clustered particles in Cluster Beam described in step (6) deposit to substrate 6 is 10~
100meV/Atom, tangential velocity when clustered particles deposit to substrate 6 are less than the 1/50 of normal velocity.
Further, protection gas described in step (7) is argon gas.
Further, the pressure of cluster source chamber A described in step (4) reaches and is maintained at 70Pa；
Further, the condensation length of the buffer area B is set as 180mm.
Further, annealing temperature described in step (7) is 700K.
The invention proposes a kind of method of the SmCo alloy magnetostriction film of cluster that size is controllable assembling, using super
High vacuum Cluster Beam system prepares the film assembled by nanoparticles, realizes and controls film on nanoscale
Magnetic property obtains the SmCo alloy magnetostriction film with magnetostrictive effect.Cluster Beam used in the present invention
Deposition method is a kind of low energy cluster-beam deposition method, and Cluster deposition is in the mode that substrate surface is a kind of soft landing, cluster
It is less likely to occur reactive polymeric, single film of uniform size easy to form between particle.SmCo alloy magnetic prepared by the present invention
Cause self-adhering film particle size uniform, the size Control of particle is less than alloy single magnetic domain critical dimension, and film has excellent
Magnetism characteristic, magnetostrictive effect is obvious, and under the magnetic field of 6400Oe, magnetostriction coefficient is 92 × 10-6, at a temperature of 700K
After in-situ annealing, magnetostriction coefficient is 145 × 10-6。
Detailed description of the invention
Fig. 1 is the schematic diagram that the present invention prepares SmCo alloy magnetostriction film using low energy cluster-beam deposition system；
Fig. 2 is the scanning electron microscope (SEM) photograph of the SmCo alloy magnetostriction film of the assembling of cluster made from the embodiment of the present invention 1；
Fig. 3 is the SmCo alloy magnetostriction film room temperature Magnetic Measurement knot of the assembling of cluster made from the embodiment of the present invention 1
Fruit figure；
Fig. 4 is that the SmCo alloy magnetostriction film room temperature magnetostriction of the assembling of cluster made from the embodiment of the present invention 1 is special
Linearity curve figure.
Appended drawing reference in Fig. 1 are as follows: 1- sputter gas entrance, 2- liquid nitrogen entrance, 3-SmCo alloys target, the spray of the 4- third level
Mouth, 5- block substrate, 6- substrate, 7- protect gas entrance, 8- condensation chamber, the second level 9- nozzle, 10- first order nozzle, the a- first order
Air pressure differential system, the second level b- air pressure differential system, c- third level air pressure differential system, d- fourth stage air pressure differential system,
A- cluster source chamber, the buffer area B-, C- are nucleated area, the vitellarium D-
Specific embodiment
With reference to embodiments 1 to 5 and attached drawing 1 to 4, further illustrate a kind of SmCo alloy magnetostriction film of the present invention
Preparation method specific embodiment and tell on.A kind of preparation method of SmCo alloy magnetostriction film of the present invention is not
It is limited to the following description.
As shown in Figure 1, being that the present invention utilizes low energy cluster-beam deposition system preparation SmCo alloy magnetostriction film
Schematic diagram.The low energy cluster-beam deposition system body is made of four parts: cluster source chamber A, buffer area B, nucleation area C and life
Long area D.
In cluster source chamber A, inert gas enters condensation chamber 8 by inert gas entrance, and the cavity wall of condensation chamber 8 is passed through liquid nitrogen
It is cooled down, such inert gas can be cooled down rapidly by the impact several times of the cavity wall with condensation chamber 8, to improve cold
Solidifying efficiency.The atom gas or ion-gas sputtered from magnetic controlled sputtering target source is entered by sputter gas entrance 1 and is full of inert gas
Condensation chamber 8 in, and mutually collide with Inert gas molecule, condense, to be formed in first order air pressure differential system a initial
Cluster.
Initial cluster flies to first order nozzle 10 under the drive of inert gas, therebetween constantly absorption sputtered atom and/or
Ion and gradually grow up.Finally, cluster flies away from buffer area B, and constant entropy expansion is occurred by first order nozzle 10 and enters nucleation
Area C, the size selection of first order nozzle 10 directly influence Cluster Beam, and the diameter of nozzle is bigger, and the cluster size of formation is got over
It is small, and will increase the intensity of Cluster Beam, it also can be reduced the possibility that spout is blocked at the same time.But the size mistake of nozzle
When big, it will increase air pressure differential system and be evacuated to obtain burden, therefore in selection, to weigh various aspects according to the actual situation, do
The selection optimized out.The cluster sprayed from first order nozzle 10 is carried by the buffer gas in the B of buffer area, passes sequentially through second
Grade air pressure differential system b, the second level nozzle 9 of diameter 2mm, third level air pressure differential system c, diameter 3mm third level nozzle 4,
Reach fourth stage air pressure differential system d.Since said nozzle all has certain taper, cluster is passing through every first order jet nozzle
When constant entropy expansion will all occur, to form the Cluster Beam with higher dimensional degree of monochromaticity of collimation.Air pressure difference at different levels system
The differential extraction of system constitutes as follows: first order air pressure differential system a is evacuated by the molecular pump of 1200L/s, second level air pressure difference
System b, third level air pressure differential system are just evacuated with fourth stage air pressure differential system d by the molecular pump of 600L/s.
When the inert gas air pressure in cluster source chamber A is 100Pa magnitude, corresponding buffer area B, nucleation area C, vitellarium
The vacuum degree of D is respectively 10-1Pa、10-4Pa、10-5Pa magnitude, the dynamic difference pumping being arranged in this way fully meet actual needs,
Stable Cluster Beam can be obtained.Finally, the clustered particles of the degree of monochromaticity with higher particle size of collimation are deposited on lining
On bottom 6, the SmCo alloy magnetostriction film of cluster assembling is formed.
The painted areas of the middle and lower part Fig. 1 illustrates the process of cluster growth and deposition, and the height of painted areas represents group
Size of the cluster in different location.As shown, cluster is initially very small particle, by buffer area B, to back
The process of flight is grown into, and continues to grow up to after being nucleated area C, the height of painted areas is stepped up.But by the second level
After nozzle 9, it is some big and it is non-uniform be filtered, following processes are similar finally when deposition, and particle compares
Uniformly, the height of painted areas almost no longer changes, and lines become flat.
Cluster Beam method used in the present invention is a kind of low energy cluster-beam deposition method, and Cluster deposition is in substrate 6
Surface is a kind of mode of soft landing.In fact, when cluster-beam deposition, energy when Cluster deposition is to substrate 6 is very low
, the kinetic energy of clustered particles to substrate 6 is about 10~100meV/Atom.Meanwhile for low energy cluster of the present invention
Line depositing system, the tangential velocity of Cluster deposition to substrate 6 are less than the 1/50 of normal velocity, thus clustered particles and substrate it
Between collision be a kind of central collision.To, tangential kinetic energy of the clustered particles on 6 surface of substrate is far smaller than migrating for surface can (one
As be eV magnitude), a wide range of polymerization being less likely to occur between clustered particles in this way.By analyzing, in clustered particles, Mei Geyuan
The kinetic energy of son is lower than 100meV, far smaller than the combination energy (combination of general atom can be eV magnitude) of atom, so cluster enters
Be mapped to is that impossible be crashed to pieces or reflect back, but be adsorbed immediately by substrate, therefore this deposition is entirely one on substrate 6
Kind soft landing mode.Clustered particles are difficult to migrate in substrate surface, therefore this Cluster deposition can regard a kind of random heap as
The process of pile, this random stacking deposition makes to be less likely to occur reactive polymeric between particle, easy to form of uniform size single
Film.
Compared with other prepare the method for film, the present invention by low energy deposition prepare by cluster assemble SmCo alloy
Magnetostrictive thin film, particle size is uniform, and the size Control of particle is less than alloy single magnetic domain critical dimension, so that film obtains
The magnetism characteristic haveing excellent performance, on this basis, film obtains apparent magnetostrictive effect, in the magnetic field of 6400Oe
Under, magnetostriction coefficient is 92 × 10-6, at a temperature of 700K after in-situ annealing, magnetostriction coefficient is 145 × 10-6。
The following are a kind of specific embodiments of the preparation method of SmCo alloy magnetostriction film of the present invention.
Embodiment 1
Select diameter for 50mm, with a thickness of 2mm SmCo alloys target as sputtering target material, in surge chamber B, buffer length
It is set as 180mm.After monocrystalline (100) Si substrate 6 is cleaned by ultrasonic, it is fixed on block substrate 5, and be sealed in cluster-beam deposition
In the fourth stage air pressure differential system c of system.Using mechanical pump and molecular pump forvacuum, make fourth stage air pressure differential system d
Vacuum pressure be lower than 3 × 10-5Pa.It is passed through liquid nitrogen in gas phase aggregation method Cluster Beam source chamber room, after chamber is cooling sufficiently,
By inert gas entrance, being passed through argon gas makes chamber pressure reach 70Pa, passes through the magnetic control in gas phase aggregation method Cluster Beam source
Sputtering generates high density SmCo alloy atom gas.In the B of buffer area, the ceaselessly collision of SmCo alloy atom gas and ar atmo by
SmCo alloy cluster is gradually grown into, and the cluster of formation is carried through differential extraction pore nozzles at different levels and height is formed and determine by air-flow
To and collimate Cluster Beam.Line aligning substrate starts to deposit, and sedimentation time is 120 minutes, and thickness is formed on the substrate
For the nano structure membrane of 720 cluster assembling；Obtaining film original position argon atmosphere protects lower 700K to anneal 5 minutes.
As shown in Figure 1, generating high density SmCo alloy atom by the magnetron sputtering in gas phase aggregation method Cluster Beam source
Gas, in buffer area B, the ceaselessly collision of SmCo alloy atom gas and ar atmo is gradually nucleated, and grows into SmCo alloy cluster,
The cluster of formation by air-flow be carried through differential extraction pore nozzles at different levels and formed high orientation and collimate Cluster Beam,
It is deposited on the nano structure membrane that cluster assembling is formed on substrate 6.
As shown in Fig. 2, can be seen that film from the scanning electron microscope image of film is the clustered particles by even size distribution
Assembling, the average-size of particle is 20nm, and this structure can ensure that the size of film microstructure is less than the list of SmCo alloy
Farmland critical dimension can guarantee film compared with being easy under downfield to have the magnetic microstructure for showing enhancing
Magnetize and have stronger magnetic interaction, and obtains good Magnetostriction.Used Electronic Speculum model SU4800,
Voltage is 10KV, and amplification factor is 200,000.
As shown in figure 3, measure the magnetism of film at room temperature using comprehensive physical property measuring system, film as the result is shown
Saturation magnetization has reached 70emu/cc, and after 700K anneals, saturation magnetization has reached 90emu/cc, obtains
Very strong room-temperature ferromagnetic.More importantly the magnetization degree that is easy to of film greatly improves, and coercive field 150Oe, warp
Coercive field is reduced to 55Oe after crossing 700K annealing, provides necessary condition to obtain good Magnetostriction.Horizontal axis in picture
Indicate magnetic field strength, the longitudinal axis indicates the intensity of magnetization；Annealingat 700K indicates to make annealing treatment by 700K；As
Deposited indicates the sample of deposition without annealing.
As shown in figure 4, measuring the Magnetostrictive Properties of film at room temperature using the cantilever beam method that optical lever is amplified
Curve.Film obtains apparent magnetostrictive effect, and magnetostriction coefficient has reached 92 × 10-6, argon gas protect,
At a temperature of 700K after in-situ annealing, magnetostriction coefficient has reached 145 × 10-6.It please supplement paraphrase, the figure of picture Chinese and English
The meaning of piece expression.Horizontal axis indicates magnetic field strength in picture, and the longitudinal axis indicates magnetostriction coefficient, and unit is ppm i.e. 10-6。
Embodiment 2
SmCo alloy magnetostriction film is deposited according to the preparation process for implementing 1, is taken out in advance very using mechanical pump and molecular pump
Sky makes the vacuum pressure of fourth stage air pressure differential system d be equal to 3 × 10-5Pa.Lead in gas phase aggregation method Cluster Beam source chamber room
Enter liquid nitrogen, after chamber is cooling sufficiently, by inert gas entrance, being passed through argon gas makes chamber pressure reach 70Pa, passes through gas phase
Magnetron sputtering in aggregation method Cluster Beam source generates high density SmCo alloy atom gas.In the B of buffer area, SmCo alloy atom
The ceaselessly collision of gas and ar atmo gradually grows into SmCo alloy cluster, and the cluster of formation is carried through difference at different levels by air-flow
The Cluster Beam for being evacuated pore nozzle and forming high orientation and collimating.Line aligning substrate starts to deposit, and sedimentation time is
120 minutes, the nano structure membrane of the cluster assembling with a thickness of 720 nanometers is formed on the substrate；Obtain film original position argon gas gas
Atmosphere protects lower 700K to anneal 5 minutes.Difference is only that the buffer length in surge chamber is set as 100mm.
Embodiment 3
SmCo alloy magnetostriction film is deposited according to the preparation process for implementing 1, is taken out in advance very using mechanical pump and molecular pump
Sky makes the vacuum pressure of fourth stage air pressure differential system d be equal to 3 × 10-5Pa.Lead in gas phase aggregation method Cluster Beam source chamber room
Enter liquid nitrogen, after chamber is cooling sufficiently, by inert gas entrance, being passed through argon gas makes chamber pressure reach 70Pa, passes through gas phase
Magnetron sputtering in aggregation method Cluster Beam source generates high density SmCo alloy atom gas.In the B of buffer area, SmCo alloy atom
The ceaselessly collision of gas and ar atmo gradually grows into SmCo alloy cluster, and the cluster of formation is carried through difference at different levels by air-flow
The Cluster Beam for being evacuated pore nozzle and forming high orientation and collimating.Line aligning substrate starts to deposit, and sedimentation time is
120 minutes, the nano structure membrane of the cluster assembling with a thickness of 720 nanometers is formed on the substrate；Obtain film original position argon gas gas
Atmosphere protects lower 700K to anneal 5 minutes.Difference is only that the buffer length in surge chamber is set as 260mm.
Embodiment 4
SmCo alloy magnetostriction film is deposited according to the preparation process for implementing 1, is taken out in advance very using mechanical pump and molecular pump
Sky makes the vacuum pressure of fourth stage air pressure differential system d be equal to 3 × 10-5Pa.Lead in gas phase aggregation method Cluster Beam source chamber room
Enter liquid nitrogen, after chamber is cooling sufficiently, by inert gas entrance, being passed through argon gas makes chamber pressure reach 70Pa, passes through gas phase
Magnetron sputtering in aggregation method Cluster Beam source generates high density SmCo alloy atom gas.In the B of buffer area, SmCo alloy atom
The ceaselessly collision of gas and ar atmo gradually grows into SmCo alloy cluster, and the cluster of formation is carried through difference at different levels by air-flow
The Cluster Beam for being evacuated pore nozzle and forming high orientation and collimating.Line aligning substrate starts to deposit, and sedimentation time is
120 minutes, the nano structure membrane of the cluster assembling with a thickness of 720 nanometers is formed on the substrate；Obtain film original position argon gas gas
Atmosphere protection lower annealing 5 minutes.Difference is only that obtaining film original position argon atmosphere protects lower 500K to anneal 5 minutes.
Embodiment 5
SmCo alloy magnetostriction film is deposited according to the preparation process for implementing 1, is taken out in advance very using mechanical pump and molecular pump
Sky makes the vacuum pressure of fourth stage air pressure differential system d be equal to 3 × 10-5Pa.Lead in gas phase aggregation method Cluster Beam source chamber room
Enter liquid nitrogen, after chamber is cooling sufficiently, by inert gas entrance, being passed through argon gas makes chamber pressure reach 70Pa, passes through gas phase
Magnetron sputtering in aggregation method Cluster Beam source generates high density SmCo alloy atom gas.In the B of buffer area, SmCo alloy atom
The ceaselessly collision of gas and ar atmo gradually grows into SmCo alloy cluster, and the cluster of formation is carried through difference at different levels by air-flow
The Cluster Beam for being evacuated pore nozzle and forming high orientation and collimating.Line aligning substrate starts to deposit, and sedimentation time is
120 minutes, the nano structure membrane of the cluster assembling with a thickness of 720 nanometers is formed on the substrate；Obtain film original position argon gas gas
Atmosphere protection lower annealing 5 minutes.Difference is only that obtaining film original position argon atmosphere protects lower 800K to anneal 5 minutes.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (2)
1. a kind of preparation method of SmCo alloy magnetostriction film, it is characterised in that: the following steps are included:
(1) metal alloy Sm is selected2Co17Target is as sputtering target material；
(2) it will be fixed on block substrate (5) after substrate (6) cleaning, and be sealed in the fourth stage air pressure of cluster-beam deposition system
In differential system (d)；
(3) using mechanical pump and molecular pump to fourth stage air pressure differential system (d) forvacuum, its pressure is made to be no more than 3 × 10- 5Pa；
(4) argon gas is passed through as sputter gas into cluster source chamber (A) and buffer area (B) by sputter gas entrance (1), makes it
Pressure reaches and is maintained at 50~100Pa, and the pressure of the cluster source chamber (A) reaches and is maintained at 70Pa；Pass through Cluster Beam
The magnetically controlled DC sputtering of depositing system generates high density SmCo alloy atom gas, and the power supply of cluster-beam deposition system is direct current
Source, the operating current of power supply are set as 135mA, and the sputtering power of cluster-beam deposition system is set as 71W；
(5) the condensation length of buffer area (B) is set as 180mm；SmCo alloy atom gas is in buffer area (B) by holding with argon gas
Continuous collision gradually grows into cluster, and the cluster of formation is carried by air-flow, passes sequentially through first order nozzle (10), second level draught head
Subsystem (b), second level nozzle (9), third level air pressure differential system (c) and third level nozzle (4) form orientation and collimation
Cluster Beam；
(6) Cluster Beam aligning substrate (6) is deposited, deposition rate 0.1nm/s, and sedimentation time is 100-150 minutes,
The Clusters Films formed on substrate (6) are with a thickness of 600~900nm, when the clustered particles in Cluster Beam deposit to substrate (6)
Kinetic energy is 10~100meV/Atom, and tangential velocity when clustered particles deposit to substrate (6) is less than the 1/50 of normal velocity；
(7) after depositing, in-situ annealing 5~10 minutes at a temperature of protecting gas atmosphere and 700K, protection gas is Clusters Films
Argon gas；
Low energy cluster-beam deposition system body is made of four parts: cluster source chamber A, buffer area B, nucleation area C and vitellarium D,
In cluster source chamber A, inert gas enters condensation chamber 8 by inert gas entrance, and it is cold that the cavity wall of condensation chamber 8 is passed through liquid nitrogen progress
But, allow inert gas to cool down rapidly by the impact several times of the cavity wall with condensation chamber 8, splashed from magnetic controlled sputtering target source
The atom gas or ion-gas of injection are entered in the condensation chamber 8 full of inert gas by sputter gas entrance 1, and and indifferent gas
Body molecule is mutually collided, is condensed, to form initial cluster in first order air pressure differential system a, initial cluster is in indifferent gas
Under the drive of body, first order nozzle 10 is flown to, constantly sputtered atom and/or ion is adsorbed therebetween and gradually grows up, finally, cluster
Buffer area B is flown away from, and constant entropy expansion is occurred by first order nozzle 10 and enters nucleation area C, is sprayed from first order nozzle 10
Cluster is carried by the buffer gas in the B of buffer area, passes sequentially through the second level nozzle of second level air pressure differential system b, diameter 2mm
9, third level air pressure differential system c, diameter 3mm third level nozzle 4 reach fourth stage air pressure differential system d, and said nozzle has
There is certain taper, when passing through every first order jet nozzle constant entropy expansion will all occur for cluster, so that form collimation has higher ruler
The Cluster Beam of very little degree of monochromaticity, the differential extractions of air pressure differential systems at different levels constitute as follows: first order air pressure differential system a by
The molecular pump of 1200L/s is evacuated, second level air pressure differential system b, third level air pressure differential system ability and fourth stage air pressure difference
System d is evacuated by the molecular pump of 600L/s, and the clustered particles of the degree of monochromaticity with higher particle size of collimation are deposited on lining
On bottom 6, the SmCo alloy magnetostriction film of cluster assembling is formed.
2. a kind of preparation method of SmCo alloy magnetostriction film according to claim 1, it is characterised in that: step
(2) substrate described in (6) is single crystalline Si (100).
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