CN102345104B - Preparation method of colossal magnetoresistance effect Fe-Ti-O amorphous film - Google Patents
Preparation method of colossal magnetoresistance effect Fe-Ti-O amorphous film Download PDFInfo
- Publication number
- CN102345104B CN102345104B CN 201110287569 CN201110287569A CN102345104B CN 102345104 B CN102345104 B CN 102345104B CN 201110287569 CN201110287569 CN 201110287569 CN 201110287569 A CN201110287569 A CN 201110287569A CN 102345104 B CN102345104 B CN 102345104B
- Authority
- CN
- China
- Prior art keywords
- target
- substrate
- preparation
- vacuum chamber
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
A preparation method of a colossal magnetoresistance effect Fe-Ti-O amorphous film adopts an ultra-high vacuum three-target codeposition magnetron sputtering coating machine for the preparation, and comprises the following steps: 1) mounting a Ti target and a Fe target on a target head of the coating machine respectively; 2) mounting a glass substrate on a substrate support; 3) turning on the magnetron sputtering device to vacuumize a sputtering chamber; 4) introducing mixed gas of O2 and Ar into the vacuum chamber to obtain a vacuum degree of 1 Pa of the vacuum chamber; 5) turning on a sputtering direct-current power supply, applying a current and a voltage to the Ti target and the Fe target; 6) opening a baffle plate of the substrate, rotating the substrate support, growing a film on the substrate; 7) after the sputtering is completed, injecting nitrogen into the vacuum chamber to obtain the prepared target product. The advantages of the invention are that: the process method is simple and easy to carry out, and the prepared film has high room-temperature magnetoresistance effect; the production cost is low, and the method is applicable to large-scale popularization and application.
Description
Technical field
Semiconductor material technology of preparing of the present invention, particularly a kind of preparation method of large magnetic resistance effect Fe-Ti-O noncrystalline membrane.
Background technology
Found giant magnetoresistance effect (Giant Magnetoresistance, GMR) in 1988 in the Fe/Cr magnetoresistance effect, this work obtains Nobel Prize in physics in 2007.After this, in non-homogeneous magnetic system (multilayer film, membrana granulosa, tunnel junction etc.), found successively the physical phenomenon of many novelties, as then wearing type magneto-resistor (Tunnel Magnetoresistance, TMR), giant Hall effect, high-coercive force, high-frequency soft magnetic etc.Therefore, the research of the spin correlation electron transport property in the non-homogeneous magnetic system and magnetic property becomes one of the most active research topic of in recent years Materials science and condensed state physics field.
Non-homogeneous magnetic system, research has formed an emerging cross discipline-spintronics (Spintronics) gradually such as the giant magnetoresistance effect (Giant Magnetoresistance, GMR) in magnetoresistance effect, magneticmetal-non-magnetic metal, Magnetic metallic-insulator granular thin films system and the MTJ of antiferromagnetic coupling.Spintronics is processed with the existing information of using positive and negative charge and is compared by existing the character of two different states (upper and lower) to be applied in the information processing electron spinning, is expected to the electronic component of realizing that integrated level is high, current consumption is low, processing speed is high.The research of spintronics materials and devices roughly is divided into three phases, i.e. the research of the GMR take magnetoresistance effect, membrana granulosa, tunnel junction and Spin Valve as representative and TMR magneto-resistance effect and device thereof; The spin-dependent transport performance is the conceptual phase of object in magnetic semiconductor and the dilute magnetic semiconductor; With the applied research stage take preparation spintronics device as target.
The people such as Tian Yufeng observe the large positive magnetoresistance of low temperature (5K) in the Co-ZnO nanometer particle film, maximum value can reach 811%, and the content of Co is closely related in the value of magneto-resistor and the film, but they think that the appearance of positive magnetoresistance suppresses relevant [ApplPhysLett92 (2008) 192109.] with the spin Zeeman effect to the transition of spin correlation range.German Research group finds 31% positive magnetoresistance [Thin Solid Films, 2006,515:2549.] during at 5K in the metal-doped ZnO film of 3d.Northeastern Japan Scientific Research in University group has found low temperature large magnetic resistance phenomenon in the Co-C60 laminated film, maximum can reach 85%[Appl Phys Lett, 2006,89:113118. under suitable electric current].The Liu Yihua professor of department of physics of Shandong University is at Fe-In
2O
3Found the remarkable reinforcing effect [JPhys:Condens Matter, 2003,15:47.] of magneto-resistor in the particle film.Magneto-resistance effect in these new systems will become the candidate material of novel spintronics device.Yet, the physical mechanism of magneto-resistance effect and Changing Pattern thereof is still unclear in these magneticmetal element-semi-conductor systems, need the further investigation of system to separate bright its microphysics mechanism, provide fundamental basis for its design at the spintronics device, enrich simultaneously people to the understanding of magneto-resistance effect.In forefathers' research, do not provide the result of study of magneticmetal element doping titanium deoxid film magneto-resistance effect.
Summary of the invention
The objective of the invention is for above-mentioned technical Analysis, a kind of preparation method of large magnetic resistance effect Fe-Ti-O noncrystalline membrane is provided, this processing method technique is simple, easy to implement, and the film that makes has higher Investigation on Room-temperature Magnetoresistance; Production cost is low, is suitable for large-scale promotion application.
Technical scheme of the present invention:
A kind of preparation method of large magnetic resistance effect Fe-Ti-O noncrystalline membrane adopts the preparation of ultrahigh vacuum(HHV) three target codeposition magnetron sputtering coaters, and this step is as follows:
1) a Ti target and Fe target are installed respectively on the target head of coating equipment;
2) glass basic surface impurity is removed after, on the mounting substrate frame, substrate up, target below, the distance of substrate and target is 13cm;
3) unlatching magnetron sputtering equipment successively starts the one-level mechanical pump and the secondary molecular pump vacuumizes, until the back end vacuum tightness of sputtering chamber is greater than 8.5 * 10
-6Pa;
4) pass into O to vacuum chamber
2With the mixed gas of Ar, so that the vacuum tightness in the vacuum chamber is 1Pa;
5) open the sputter direct supply, apply electric current and voltage at Ti target Fe target respectively, pre-sputter 20 minutes waits sputtering current and voltage stabilization;
6) open the baffle plate of substrate, the speed rotation base horse that turns with per minute 2 simultaneously is at the titania-doped noncrystalline membrane of substrate growth iron;
7) growing film was closed the baffle plate of substrate after 15 minutes, and substrate frame stops operating, and then closed shielding power supply, stopped to pass into sputter gas Ar and O
2, close vacuum system after continuing to vacuumize half an hour, then being filled with purity to vacuum chamber is 99.999% nitrogen, until the air pressure of vacuum chamber and outside atmosphere are pressed when identical, opens vacuum chamber and takes out the target product that makes.
The thickness that the purity of described Ti target and Fe target is 99.99%, Ti target is 4mm, and the thickness of Fe target is 2.5mm, and the diameter of Ti target and Fe target is 60mm.
Described O
2In the Ar mixed gas, O
2Be 99.999% with the purity of Ar, wherein O
2Flow be 3sccm, the flow of Ar is 100sccm.
Described sputter direct supply applies the electric current of 0.4A and the voltage of 340V at the Ti target, applies the electric current of 0.3A and the voltage of 320V at the Fe target.
The preparation method of a kind of large magnetic resistance effect Fe-Ti-O noncrystalline membrane involved in the present invention has and has that suitability for industrialized production compatibility, target are selected now and the advantage such as preparation condition is simple, is with a wide range of applications in the preparation of various electronics devices.
Compare with other method for preparing film, the present invention has the following advantages:
1) the present invention's Fe-Ti-O noncrystalline membrane of adopting sputtering method to prepare to have large Investigation on Room-temperature Magnetoresistance is compared with organism metallochemistry vapour deposition process with pulsed laser deposition commonly used, has explicit costs and technical superiority in suitability for industrialized production;
2) processing condition are simple, do not need the substrate heating, do not need special base material, just can realize on substrate of glass, not only more easily realize from industrial, and range of application is also wider simultaneously;
3) film has higher Investigation on Room-temperature Magnetoresistance.
Description of drawings
Fig. 1 is the high resolution transmission electron microscope light field image of the Fe-Ti-O noncrystalline membrane for preparing of the present invention.
Fig. 2 is the variation relation curve of the electrical resistance temperature of the Fe-Ti-O noncrystalline membrane for preparing of the present invention.
Fig. 3 is that the magneto-resistor of the Fe-Ti-O laminated film for preparing of the present invention is with the variation relation curve (the vertical face in magnetic field) of externally-applied magnetic field and temperature.
Embodiment
Embodiment:
The structure and the property analysis that sample prepared among the present invention are carried out according to us, the preferred forms that the below will have the titania-doped noncrystalline membrane preparation of iron of large Investigation on Room-temperature Magnetoresistance is described in detail, and the magnetron sputtering equipment of using among the embodiment is the ultrahigh vacuum(HHV) three target codeposition magnetron sputtering coaters that adopt scientific instrument development center, Chinese Academy of Sciences Shenyang to produce.
A kind of preparation method of large magnetic resistance effect Fe-Ti-O noncrystalline membrane, this step is as follows:
1) purity being installed respectively on the target head of coating equipment is 99.99% Ti target and 99.99% Fe target, and the thickness of target is respectively 4mm and 2.5mm, and diameter is 60mm;
2) adopt ultrasonic wave that glass basic surface impurity is removed after, on substrate mounting substrate frame, substrate up, target below, the distance of substrate and target is 13cm;
3) unlatching magnetron sputtering equipment successively starts the one-level mechanical pump and the secondary molecular pump vacuumizes, until the back end vacuum tightness of sputtering chamber is greater than 8.5 * 10
-6Pa;
4) passing into purity to vacuum chamber is 99.999% O
2With the mixed gas of 99.999% Ar, so that the vacuum tightness in the vacuum chamber is 1Pa, wherein O
2Flow be 3sccm, the flow of Ar is 100sccm;
5) open the sputter direct supply, apply the electric current of 0.4A and the voltage of 340V at the Ti target respectively, apply the electric current of 0.3A and the voltage of 320V at the Fe target, pre-sputter 20 minutes waits sputtering current and voltage stabilization;
6) open the baffle plate of substrate, the speed rotation base horse that turns with per minute 2 simultaneously is at the titania-doped noncrystalline membrane of substrate growth iron;
7) growing film was closed baffle plate, the substrate frame rotation system of substrate after 15 minutes, then closed shielding power supply, stopped to pass into sputter gas Ar and O
2, continue to vacuumize, close vacuum system after half an hour, being filled with purity to vacuum chamber is 99.999% nitrogen, until the air pressure of vacuum chamber and outside atmosphere press when identical, opens vacuum chamber and takes out sample and get final product.
For confirming the embodiment of the best of the present invention, we have carried out the analysis with the variation relation of externally-applied magnetic field of atomic force microscope, electrical resistance temperature variation relation and magneto-resistor to the film of the present invention's preparation.
Fig. 1 is the high resolution transmission electron microscope light field image of the Fe-Ti-O noncrystalline membrane for preparing of the present invention.As can be seen from the figure, sample is unordered non-crystalline state, long-range order do not occur.
Fig. 2 is the variation relation curve of the electrical resistance temperature of the Fe-Ti-O noncrystalline membrane for preparing of the present invention.As can be seen from the figure, the resistance of sample shows as the semi-conductor conductive characteristic along with the reduction of temperature raises.
Fig. 3 is that the magneto-resistor of the Fe-Ti-O laminated film for preparing of the present invention is with the variation relation curve (the vertical face in magnetic field) of externally-applied magnetic field and temperature.As can be seen from the figure, the magnetoelectricity resistance of sample under 3K is greater than 30%, and magneto-resistor is about 8% when 300K.
Claims (4)
1. the preparation method of a large magnetic resistance effect Fe-Ti-O noncrystalline membrane is characterized in that: adopt the preparation of ultrahigh vacuum(HHV) three target codeposition magnetron sputtering coaters, this step is as follows:
1) a Ti target and Fe target are installed respectively on the target head of coating equipment;
2) glass basic surface impurity is removed after, on the mounting substrate frame, substrate up, target below, the distance of substrate and target is 13 cm;
3) unlatching magnetron sputtering equipment successively starts the one-level mechanical pump and the secondary molecular pump vacuumizes, until the back end vacuum tightness of sputtering chamber is greater than 8.5 * 10
– 6Pa;
4) pass into O to vacuum chamber
2With the mixed gas of Ar, so that the vacuum tightness in the vacuum chamber is 1 Pa;
5) open the sputter direct supply, apply electric current and voltage at Ti target Fe target respectively, pre-sputter 20 minutes waits sputtering current and voltage stabilization;
6) open the baffle plate of substrate, the speed rotation base horse that turns with per minute 2 simultaneously is at the titania-doped noncrystalline membrane of substrate growth iron;
7) growing film was closed the baffle plate of substrate after 15 minutes, and substrate frame stops operating, and then closed shielding power supply, stopped to pass into sputter gas Ar and O
2, close vacuum system after continuing to vacuumize half an hour, then being filled with purity to vacuum chamber is 99.999% nitrogen, until the air pressure of vacuum chamber and outside atmosphere are pressed when identical, opens vacuum chamber and takes out the target product that makes.
2. the preparation method of described large magnetic resistance effect Fe-Ti-O noncrystalline membrane according to claim 1, it is characterized in that: the purity of described Ti target and Fe target is 99.99%, the thickness of Ti target is 4 mm, and the thickness of Fe target is 2.5 mm, and the diameter of Ti target and Fe target is 60 mm.
3. the preparation method of described large magnetic resistance effect Fe-Ti-O noncrystalline membrane according to claim 1 is characterized in that: described O
2In the Ar mixed gas, O
2Be 99.999% with the purity of Ar, wherein O
2Flow be 3sccm, the flow of Ar is 100 sccm.
4. the preparation method of described large magnetic resistance effect Fe-Ti-O noncrystalline membrane according to claim 1, it is characterized in that: described sputter direct supply applies the electric current of 0.4 A and the voltage of 340 V at the Ti target, applies the electric current of 0.3 A and the voltage of 320 V at the Fe target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110287569 CN102345104B (en) | 2011-09-26 | 2011-09-26 | Preparation method of colossal magnetoresistance effect Fe-Ti-O amorphous film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110287569 CN102345104B (en) | 2011-09-26 | 2011-09-26 | Preparation method of colossal magnetoresistance effect Fe-Ti-O amorphous film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102345104A CN102345104A (en) | 2012-02-08 |
| CN102345104B true CN102345104B (en) | 2013-03-06 |
Family
ID=45544169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110287569 Expired - Fee Related CN102345104B (en) | 2011-09-26 | 2011-09-26 | Preparation method of colossal magnetoresistance effect Fe-Ti-O amorphous film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102345104B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845315A (en) * | 2016-05-06 | 2016-08-10 | 天津理工大学 | Amorphous FeTiO/SiO2/p-Si heterostructure material and preparation method thereof |
| CN110565059B (en) * | 2019-09-10 | 2021-09-17 | 天津大学 | Preparation method and device of titanium oxide-based nano particle composite film with room-temperature tunnel magnetoresistance effect |
| CN111441027B (en) * | 2020-05-28 | 2022-01-11 | 上海大学 | Fe70Nb10B20Surface modification method of amorphous alloy film |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101736303B (en) * | 2009-12-11 | 2011-11-16 | 天津大学 | Preparation method of chromium-doped titanium nitride magnetic semiconductor polycrystal film |
-
2011
- 2011-09-26 CN CN 201110287569 patent/CN102345104B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN102345104A (en) | 2012-02-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Coey et al. | Oxide dilute magnetic semiconductors—fact or fiction? | |
| CN102345104B (en) | Preparation method of colossal magnetoresistance effect Fe-Ti-O amorphous film | |
| Cao et al. | Movable-type transfer and stacking of van der Waals heterostructures for spintronics | |
| CN108732791B (en) | Polarizability-controllable wavelength-variable two-dimensional optical rotation device and preparation method thereof | |
| Wang et al. | Tunneling anisotropic magnetoresistance in C 60-based organic spintronic systems | |
| CN105845314B (en) | CoFeB/SiO with large magnetic resistance effect2/ n Si heterojunction structures and preparation method | |
| Li et al. | Room‐Temperature van der Waals Ferromagnet Switching by Spin‐Orbit Torques | |
| Zhou et al. | Magnetic enhancement of pure gamma Fe2O3 nanochains by chemical vapor deposition | |
| CN102270737A (en) | ZnO-based diluted magnetic semiconductor film with intrinsic ferromagnetism and preparation method thereof | |
| CN102361062B (en) | Preparation method of p-Si-based hetero-structure with large magneto-resistance effect | |
| CN107119261B (en) | A kind of huge logic gates alloy film material and its preparation method and application | |
| CN110797454B (en) | Ultrahigh anisotropy magnetoresistance film material and preparation method thereof | |
| Hu et al. | Continuous Room‐Temperature Spin‐Injection Modulation Achieved by Spin‐Filtering Competition in Molecular Spin Valves | |
| Maccato et al. | Magnetic properties of ε iron (III) oxide nanorod arrays functionalized with gold and copper (II) oxide | |
| CN104009153B (en) | Particle film magneto-resistance device and preparation method thereof | |
| CN111293217B (en) | Method for enhancing effective conversion efficiency of charge flow-spin flow in ferromagnetic/heavy metal film system based on stress | |
| CN210379112U (en) | Electrically adjustable anisotropic tunneling magnetoresistance structure | |
| CN104009152B (en) | Fe/P3HT particle film magneto-resistance device and preparation method thereof | |
| CN110165045B (en) | W-B alloy material and spin-orbit torque-based spin electronic device | |
| Chen et al. | Microstructures, electrical and magnetic properties of (Ga, Co)-ZnO films by radio frequency magnetron co-sputtering | |
| CN106006583A (en) | Preparation method for ferromagnetic B-doped g-C3N4 two-dimensional ultrathin nanosheet | |
| CN109273594A (en) | A kind of particle film magnetic resistance material and preparation method based on P3HT | |
| CN114335328B (en) | Giant spin Hall angle material of metal-titanium oxide composite particle film and preparation method thereof | |
| Saito et al. | High tunneling magnetoresistance in Fe/GaOx/Ga1− xMnxAs with metal/insulator/semiconductor structure | |
| Hou et al. | Structural determination and magnetic properties for Co–rubrene composite films on Si (1 0 0) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130306 Termination date: 20130926 |