CN106033808B - Silicon based electrode and its manufacture craft - Google Patents
Silicon based electrode and its manufacture craft Download PDFInfo
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- CN106033808B CN106033808B CN201510115594.5A CN201510115594A CN106033808B CN 106033808 B CN106033808 B CN 106033808B CN 201510115594 A CN201510115594 A CN 201510115594A CN 106033808 B CN106033808 B CN 106033808B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 112
- 239000010703 silicon Substances 0.000 title claims abstract description 112
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 111
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 16
- 230000001681 protective effect Effects 0.000 claims abstract description 16
- 238000002407 reforming Methods 0.000 claims abstract description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 9
- 239000000853 adhesive Substances 0.000 claims abstract description 7
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 35
- 238000000576 coating method Methods 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- 238000004064 recycling Methods 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 238000003618 dip coating Methods 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 239000005543 nano-size silicon particle Substances 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 238000007761 roller coating Methods 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 229910052796 boron Inorganic materials 0.000 abstract description 3
- 238000010406 interfacial reaction Methods 0.000 abstract description 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 3
- 239000011574 phosphorus Substances 0.000 abstract description 3
- 125000004429 atom Chemical group 0.000 description 24
- 229910052744 lithium Inorganic materials 0.000 description 18
- 239000003792 electrolyte Substances 0.000 description 16
- 238000004146 energy storage Methods 0.000 description 16
- 239000000758 substrate Substances 0.000 description 13
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- -1 aliphatic nitrile Chemical class 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 238000002955 isolation Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000007784 solid electrolyte Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 description 5
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 4
- 239000006183 anode active material Substances 0.000 description 4
- 229910021389 graphene Inorganic materials 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000010954 inorganic particle Substances 0.000 description 4
- 239000007773 negative electrode material Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 229920003048 styrene butadiene rubber Polymers 0.000 description 4
- IXPNQXFRVYWDDI-UHFFFAOYSA-N 1-methyl-2,4-dioxo-1,3-diazinane-5-carboximidamide Chemical compound CN1CC(C(N)=N)C(=O)NC1=O IXPNQXFRVYWDDI-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 description 3
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000006230 acetylene black Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 229910001416 lithium ion Inorganic materials 0.000 description 3
- 229910003002 lithium salt Inorganic materials 0.000 description 3
- 159000000002 lithium salts Chemical group 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000000661 sodium alginate Substances 0.000 description 3
- 235000010413 sodium alginate Nutrition 0.000 description 3
- 229940005550 sodium alginate Drugs 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 description 2
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000002174 Styrene-butadiene Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000005030 aluminium foil Substances 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 230000002427 irreversible effect Effects 0.000 description 2
- MHCFAGZWMAWTNR-UHFFFAOYSA-M lithium perchlorate Chemical group [Li+].[O-]Cl(=O)(=O)=O MHCFAGZWMAWTNR-UHFFFAOYSA-M 0.000 description 2
- 229910001486 lithium perchlorate Inorganic materials 0.000 description 2
- 229910001496 lithium tetrafluoroborate Inorganic materials 0.000 description 2
- 239000005486 organic electrolyte Substances 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 239000007774 positive electrode material Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- ZZXUZKXVROWEIF-UHFFFAOYSA-N 1,2-butylene carbonate Chemical compound CCC1COC(=O)O1 ZZXUZKXVROWEIF-UHFFFAOYSA-N 0.000 description 1
- 239000004484 Briquette Substances 0.000 description 1
- LSRGXLRLWFDKNR-UHFFFAOYSA-N FC(F)(F)[S] Chemical compound FC(F)(F)[S] LSRGXLRLWFDKNR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000733 Li alloy Inorganic materials 0.000 description 1
- 229910032387 LiCoO2 Inorganic materials 0.000 description 1
- 229910052493 LiFePO4 Inorganic materials 0.000 description 1
- 229910002099 LiNi0.5Mn1.5O4 Inorganic materials 0.000 description 1
- 229910013161 LiNixCo Inorganic materials 0.000 description 1
- 229910013467 LiNixCoyMnzO2 Inorganic materials 0.000 description 1
- 229910001290 LiPF6 Inorganic materials 0.000 description 1
- 229910002097 Lithium manganese(III,IV) oxide Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 235000010443 alginic acid Nutrition 0.000 description 1
- 239000000783 alginic acid Substances 0.000 description 1
- 229960001126 alginic acid Drugs 0.000 description 1
- 229920000615 alginic acid Polymers 0.000 description 1
- 150000004781 alginic acids Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- CUZMQPZYCDIHQL-VCTVXEGHSA-L calcium;(2s)-1-[(2s)-3-[(2r)-2-(cyclohexanecarbonylamino)propanoyl]sulfanyl-2-methylpropanoyl]pyrrolidine-2-carboxylate Chemical compound [Ca+2].N([C@H](C)C(=O)SC[C@@H](C)C(=O)N1[C@@H](CCC1)C([O-])=O)C(=O)C1CCCCC1.N([C@H](C)C(=O)SC[C@@H](C)C(=O)N1[C@@H](CCC1)C([O-])=O)C(=O)C1CCCCC1 CUZMQPZYCDIHQL-VCTVXEGHSA-L 0.000 description 1
- 150000001720 carbohydrates Chemical class 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 229920006184 cellulose methylcellulose Polymers 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 150000002196 fatty nitriles Chemical class 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- RRMGGYGDQCMPKP-UHFFFAOYSA-N gold lithium Chemical compound [Li].[Au] RRMGGYGDQCMPKP-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- 229910000625 lithium cobalt oxide Inorganic materials 0.000 description 1
- 229910002102 lithium manganese oxide Inorganic materials 0.000 description 1
- BFZPBUKRYWOWDV-UHFFFAOYSA-N lithium;oxido(oxo)cobalt Chemical compound [Li+].[O-][Co]=O BFZPBUKRYWOWDV-UHFFFAOYSA-N 0.000 description 1
- VLXXBCXTUVRROQ-UHFFFAOYSA-N lithium;oxido-oxo-(oxomanganiooxy)manganese Chemical compound [Li+].[O-][Mn](=O)O[Mn]=O VLXXBCXTUVRROQ-UHFFFAOYSA-N 0.000 description 1
- URIIGZKXFBNRAU-UHFFFAOYSA-N lithium;oxonickel Chemical compound [Li].[Ni]=O URIIGZKXFBNRAU-UHFFFAOYSA-N 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000005518 polymer electrolyte Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Battery Electrode And Active Subsutance (AREA)
Abstract
The invention discloses a kind of manufacture craft of silicon electrode, step includes: offer electrically-conductive backing plate；In forming silicon layer on electrically-conductive backing plate；And plasma reforming step executed to the surface of silicon layer, plasma reforming step is that multiple atom doped surfaces in silicon layer and are formed atom doped layer in surface.The present invention also discloses a kind of silicon electrode; there is the silicon layer of atom doped layer and the organic protective film layer that is arranged on atom doped layer including electrically-conductive backing plate, in surface is arranged on electrically-conductive backing plate, wherein the atom in the atom doped layer on the surface of silicon layer is nitrogen, phosphorus, boron or above-mentioned any combination.Silicon layer is made of silica-base material, adhesive agent and assistant director of a film or play's agent, by the atom doped layer in silicon surface, can inhibit the formation of interfacial reaction layer, can promote the capacitance and cycle life of silicon electrode whereby.
Description
Technical field
The present invention is about a kind of silicon based electrode, especially a kind of manufacture craft of silicon based electrode.
Background technique
Closely for decades, since the electronic products such as smartphone, electric vehicle sharply develop, battery durable power and charge and discharge
Electric speed becomes the major subjects that the technology of lithium battery energy storage battery device develops.In other words, high-energy density and quick charge and discharge
The electrode material of electrical property is current the main direction of development, wherein the negative electrode material with high-energy density is silicon base.
However, still thering are several to need to overcome the problems, such as if being intended to use silicon as lithium ion battery negative material: when (1) charging, lithium ion
When forming lithium alloy with silicon, cause silicon during the charging process, volume will expand to the three-to-four-fold of original volume, this violent body
Product expansion easily causes negative el to be disintegrated, to reduce the service life cycle of lithium ion battery.(2) in charge and discharge process
In, because chemical reaction generates solid electrolyte interface film (SEI, Solid Electrolyte between electrolyte and electrode slice
Interface), electrical irreversible and cycle life is in turn resulted in lower.In general, if the body of silicon based cells to be inhibited
The product coefficient of expansion with the silicon particle of nanometer dimension and is mixed into the carbon source of variety classes or different-shape mostly, such as pitch, each
Kind carbohydrate graphene or carbon nanotubes etc..It and is in electrolyte if the generation of solid electrolyte interface film to be inhibited
Electrolysis additive is added or reacts and lower interface impedance in being coated on electrode slice, being coated with protective film to reach isolation, inhibit
Effect.
By taking TaiWan, China patent of invention discloses No. 201340449 as an example, a kind of cathode of lithium battery architecture design is disclosed,
Including collector and the anode active material layer being coated on the collector, and in being coated with organic guarantor in anode active material layer
Cuticular layer.Its organic protective film layer is made of inorganic particle, these inorganic particles can be metal, silicon, metal oxide, silicon oxygen
The composition of the mixture of compound or above-mentioned material.Wherein metal can be silver-colored (Ag), copper (Cu), tin (Sn), aluminium (Al) or
Tungsten (W)；Si oxide can be silica (SiOx, 0 < x≤2), silica-graphite (SiO2- graphite, 0 < x≤2) or
It is oxidation silico-carbo (SiOx- carbon, 0 < x≤2) etc..Protective film has the function of inhibiting solid electrolyte interface film to generate, and can
To prevent battery under high temperature environment, because the structure of negative electrode material caused by electrolyte decomposition is destroyed, and then extend battery
Service life.
By taking TaiWan, China patent of invention discloses No. 201340450 as an example, invention discloses a kind of lithium battery anode frame
Structure comprising collector and the anode active material layer being coated on collector, and in being coated in anode active material layer
Organic protective film layer, this organic protective film layer are made of inorganic particle, such as metal oxide such as ZrO2、Mg(OH)2、MgO、
TiO2、Al2O3、La2O3Or ZnO etc. or above-mentioned each oxide-metal combinations at mixture.This organic protective film layer can be to prevent
Only positive electrode active materials directly and electrolyte contacts, to prevent battery in the case where high voltage or overcharge, electrolyte
Because contacting anode due to oxygenolysis, the phenomenon that structural stability of positive electrode is with gas is generated is destroyed, and then influence its electricity
The electrical property in pond, causes battery to shorten.In addition it is noted that TaiWan, China patent of invention discloses the 201340449th
Number and TaiWan, China patent of invention disclose No. 201340450 be all disclose to be deposited, sputter, furnace formula sputter or takeup type etc.
The mode of vacuum coating carries out the plating of inorganic particle, and the thickness for forming organic protective film layer is smaller than 100nm.
However, two pieces document above-mentioned for positive and negative anodes protective film respectively disclose for positive and negative electrode material metal or its
Oxide particle, but its process equipment as low as coating system is greatly to vacuum system, and or its metal and its oxide powder
Economic benefit is all gone up and do not meet to target in the considerations of cost, and is extra resource cost on environment friendly considers.
In addition, containing fatty nitrile about one kind again by taking TaiWan, China patent of invention announces No. 256166 as an example
The electrode of (aliphatic nitrile) compound, wherein aliphatic nitrile compound is coated on the surface of cathode electrode, or combines
In the active material of cathode electrode, manufacture craft includes coating, coining coating (die coating), roll-type coating or scraper
Formula coating etc. or the combination of above-mentioned each technique.Announce lithium produced by No. 256166 electrode of the announcement containing this compound
Secondary cell has excellent safety, and can avoid reacting for electrolyte and electrode slice, and occur because overcharging
Electrode chip architecture is destroyed, caused heat dissipation, and then internal temperature of battery is made to increase and cause inside battery short circuit, is made
At calcination and explosion.However, the considerations of reducing cost with industrialization, the compounds such as aliphatic nitrile are high monovalent chemicals and system
It is more complicated to make technique, it is extremely improper if the use of its being additive.It is examined closely again with the viewpoint of environmental protection, this organic addition
Agent easily causes environmental pollution and is difficult to the problem of recycling.Therefore, lower cost and the technological development friendly compared with environment, there is it
Necessary existence.
Finally, which disclose a kind of Graphene electrodes again by taking TaiWan, China patent of invention discloses No. 201421781 as an example
And its manufacture craft, it is handled using dry type surfaction, exotic atom doping, Ke Yiti is carried out to graphene surface under low temperature
The capacitance and reduction for rising Graphene electrodes can not reciprocal capacitys.The dry type surface disclosed by the displosure the 201421781st
Processing can be plasma modifying process.In addition, reaction gas is passed through, so that different original in this plasma modification processing procedure
In the graphene-doped layer of son.Reactor used in plasma modification technology described in disclosing No. 201421781 can be low
Press the plasma reactor of (low pressure) operation or the plasma-based of normal pressure (atmospheric pressure) operation
Reactor.Although however, point out it disclosing No. 201421781 only pipe efficiency be excellent using electrode graphite alkene, compared to
For silicon based electrode, in addition to production is not easy, other than higher cost, capacitance is also come excellent without silicon based cells.
Summary of the invention
In view of known techniques silicon substrate lithium battery in charge and discharge process, between electrolyte and electrode slice because chemical reaction
It generates solid electrolyte interface film (SEI, Solid Electrolyte Interface), therefore the main object of the present invention is
Inhibit this chemical reaction, and reduces electrical cycle life that is irreversible and increasing silicon substrate lithium battery.
It is another object of the present invention to carry out plasma to the surface of silicon layer at room temperature by surfaction processing technique
Body processing, the atom doped surface to silicon layer of energetic plasma can be promoted whereby with inhibiting the formation of interfacial reaction layer
Capacitance and cycle life of the silicon layer as silicon electrode piece.
According to above-mentioned purpose, the invention discloses a kind of manufacture craft of silicon based electrode, step includes: offer conductive base
Plate；In forming silicon layer on electrically-conductive backing plate；And plasma reforming step, plasma modification are executed to the surface of silicon layer
Step is that multiple atom doped surfaces in silicon layer and are formed atom doped layer in surface.
According to above-mentioned purpose, the present invention also discloses a kind of silicon based electrode, including electrically-conductive backing plate, in table is arranged on electrically-conductive backing plate
The organic protective film layer that face has the silicon layer of atom doped layer and is arranged on atom doped layer, wherein on the surface of silicon layer
Atom doped layer in atom be nitrogen, phosphorus, boron or above-mentioned any combination.Silicon layer is by silica-base material, adhesive agent and assistant director of a film or play's agent
It is formed, by the atom doped layer in silicon surface, the formation of interfacial reaction layer can be inhibited, silicon substrate electricity can be promoted whereby
The capacitance and cycle life of pole.
Detailed description of the invention
Fig. 1 to Fig. 3 disclosed technology according to the present invention, indicates each step schematic diagram of the manufacture craft of silicon electrode.
Fig. 4 disclosed technology according to the present invention, indicates that silicon based electrode is applied to the schematic diagram of energy storage device.
Fig. 5 disclosed technology according to the present invention, indicates with x-ray photoelectron spectroscopy (X-ray Photoelectron
Spectrometer, XPS) surface of modified silicon layer is analyzed, it is former to be identified in the nitrogen adulterated on the surface of silicon layer
The intensity of son, and then calculate its number.
Fig. 6 disclosed technology according to the present invention, indicates charging and discharging curve and cycle life curve figure.
Fig. 7 disclosed technology according to the present invention, indicates the capacitance in different embodiments, circle number and coulomb transfer efficiency
Curve graph.
[primary clustering symbol description]
10 silicon based electrode, 11 electrically-conductive backing plate
The atom doped layer of 12 silicon layer 122
13 plasma reforming step, 14 organic protective film layer
30 oxide substrates of the energy storage device 32 containing lithium metal
34 isolation film, 36 electrolyte
38 shells
Specific embodiment
Fig. 1 to Fig. 3 is please referred to, indicates each step schematic diagram of the manufacture craft of silicon based electrode.It is led as shown in Figure 1, first providing
Then electric substrate 11 forms silicon layer 12 on electrically-conductive backing plate 11.Wherein, electrically-conductive backing plate 11 is metal foil, in implementation of the invention
Example is with copper foil as electrically-conductive backing plate 11.The step of silicon layer 12 is formed in electrically-conductive backing plate 11 includes: that will first contain silicon composition
Coating be formed in a manner of being coated on electrically-conductive backing plate 11, then the coating being formed on electrically-conductive backing plate 11 is dried again
Technology is to form silicon layer 12 on electrically-conductive backing plate 11.In this present embodiment, the technique of coating includes wire mark (screen
Printing), method of spin coating (spin coating), rodlike rubbing method (bar coating), scraper for coating method (blade
Coating), roller rubbing method (roller coating) or Dipcoat method (dip coating), however in the present invention
In, the means that coating is formed on electrically-conductive backing plate 11 are not limited to the above.It is to utilize to scrape cutter painting in the embodiment of the present invention
Coating containing silicon composition is coated on electrically-conductive backing plate 11 by cloth method.In addition, the temperature of stoving process 40 DEG C -150 DEG C it
Between.It is at least made of silica-base material, adhesive agent and assistant director of a film or play's agent containing silicon composition.Wherein, silica-base material can be monocrystalline silicon,
The silicon substrates such as polysilicon, various nano-silicon, such as carbon/silicon composite, recycling silicon, wherein recycling silicon can be silicon rod, silicon
Ingot or silico briquette but it is not limited only to this.Silica-base material is also possible to by lithium embedded category negative electrode material, and adulterating composition can be with
It is the either above-mentioned any combination of boron, phosphorus, arsenic, antimony, aluminium, sulphur, tin, germanium or indium.Adhesive agent can be the compound tackifier of water system,
The combination of organic tackifier either above two tackifier.In this present embodiment, the compound tackifier of water system or organic increasing stick
Agent can be sanlose (CMC, Carboxymethyl Cellulose), sodium alginate (Sodium
Alginate), SBR styrene butadiene rubbers (SBR, styrene butadiene rubber) or Kynoar
(PVDF,Polyvinylidene fluoride).Assistant director of a film or play's agent can be graphite, various carbon black, acetylene black (acetylene
) or combinations of the above black.In an embodiment of the present invention, containing the adhesive agent in silicon composition be sodium alginate and
Assistant director of a film or play's agent is acetylene black.
Then, as shown in Fig. 2, carrying out plasma reforming step 13 for the silicon layer 12 on electrically-conductive backing plate 11, mainly
It is that the atom for being intended to adulterate is reacted using plasma reactor generation energetic atom with silicon layer, foreign atom to 12 table of silicon layer
Face, so that forming atom doped layer 122 on the surface of silicon layer 12, this purpose is the electrochemical properties in order to promote silicon layer 12, example
Such as capacitance, cycle life and coulomb transfer efficiency.Its plasma reforming step 13 includes: being passed through carrying gas and desire
The gas source of the atom of doping modifies silicon layer 12 through plasma reactor, is formed whereby on the surface of silicon layer 12
Atom doped layer 122.It is noted that being not required to since the present invention only needs the surface that Plasma-Atomic is doped into silicon layer 12
The atom of doping is diffused into entire silicon layer 12, therefore in plasma reforming step, do not need for a long time spread with
And heating, or operated under vacuum to prevent electrically-conductive backing plate 11 from aoxidizing.In addition, in the operation of plasma reforming step 13
Cheng Zhong can adjust flow, the carrying gas flow, reaction pressure, power, reaction time, processing of reaction gas according to actual needs
Number and/or the distance between silicon layer 12 and plasma reactor, the processing power range of plasma reforming step
Between 10~1000 watts (W), number of processes range between primary to hundreds of times, between plasma reactor at a distance from
Range is between 0.3 to 1 centimeter and processing time range is between 1 second to 1 hour, and carrying gas can be helium, argon gas, nitrogen
The combination of gas, neon or above-mentioned gas, the gas source of the atom to be adulterated be nitrogen, ammonia, the gas molecule in air or
The above-mentioned any combination of person, and the atom doped amount of the atom doped layer is between 0.23-1.12atom%.In reality of the invention
It applies in example, is carrying gas with argon gas, the atom of doping is the nitrogen-atoms in nitrogen.
It is noted that reactor used in the plasma modifying process step in Fig. 2 uses low pressure (low
Pressure) or the plasma reactor of normal pressure (atmospheric pressure) operation, form can be nozzle
The design such as formula (jet) or flat (plate).It is with nozzle-type atmospheric plasma board in this present embodiment
(atmospheric pressure plasma jet) carrys out the carry out surfaction step to silicon layer 12.
Then as shown in figure 3, organic protective film layer 14 is formed on atom doped layer 122, to complete silicon electrode 10
Production.In this present embodiment, the mode that organic protective film layer 14 is formed on atom doped layer 122 be can use into coating, steamed
Plating or the technological means such as sputter are reached, but not limited to this.In the embodiment of the present invention, by organic guarantor in a manner of vapor deposition
Cuticular layer 14 is formed on atom doped layer 122, and thickness range is about between 50nm-150nm.14 material of organic protective film layer
Material may include but do not limit to be different crystallinity and variety classes carbon materials based on organic carbon materials.
Next referring to Fig. 4.Fig. 4 is the schematic diagram that silicon electrode is applied to energy storage device.In Fig. 4, energy storage device 30
With shell 38, in being equipped with electrolyte 36 in shell 38.In being additionally provided with above-mentioned silicon electrode 10 in shell 38, as energy storage
The negative electrode of device 30, and using the oxide substrate 32 containing lithium metal be used as positive electrode, wherein silicon electrode 10 with containing lithium gold
It is arranged between the oxide substrate 32 of category with spacing distance, and between silicon electrode 10 and oxide substrate 32 containing lithium metal also
It is provided with isolation film 34, and above-mentioned silicon electrode 10, the oxide substrate 32 containing lithium metal and isolation film 34 is infiltrated on electrolysis
In liquid 36.In this present embodiment, the oxide substrate 32 containing lithium metal can be lithium manganese oxide, lithium nickel oxide and lithium cobalt oxide
The composite oxides of the lithiums such as compound and transition metal, such as LiCoO2、LiMn2O4、LiFePO4、LiNixCoyMnzO2(0 < x, y, z <
1)、LiNixCo yAlzO2(0 < x, y, z < 1), LiNi0.5Mn1.5O4Or combinations thereof.Isolation film 34 can be monofilm or double
Tunic, the material of isolation film 34 are using lithium battery isolation membrane in the prior art, such as inorganic paper, nonwoven fabric or high molecular polymer
Perforated membrane etc..
In addition, in this present embodiment, the electrolyte used in energy storage device 30 is by organic solvent and electrolyte institute
Composition, wherein organic solvent can be the mixed solvent as composed by a kind of or several organic solvents, and electrolyte is also possible to
A kind of electrolyte or several electrolyte are formed.In the present invention, organic solvent can be propylene carbonate, carbonic acid Asia second
Ester, butylene carbonate, dimethyl carbonate, diethyl carbonate, methyl ethyl carbonate or 1,2- dimethoxy-ethane.Electrolyte is lithium salts
Electrolyte or polymer dielectric, wherein lithium salts electrolyte is lithium perchlorate, LiBF4, lithium hexafluoro phosphate, trifluoromethyl
Sulfonic Lithium or hexafluoroarsenate lithium.Polymer dielectric is containing lithium perchlorate, LiBF4, lithium hexafluoro phosphate, trifluoromethyl sulphur
Polyethylene oxygen alkane, polypropylene oxygen alkane, polyacrylonitrile, polyvinyl chloride or the Kynoar of the lithium salts such as sour lithium, hexafluoroarsenate lithium.
It is noted that the material of the shell 38 of energy storage device 30 can be metal, alloy, plastics, aluminium foil or above-mentioned
The combination of a variety of materials.And disclosed herein energy storage device 30 can be fabricated to required pattern according to demand, such as
Round energy storage device, square type energy storage device, polymer electrolyte energy storage device or Aluminium Foil Package energy storage device, form are not limited to
This.
According to the above, the fabrication processing of the present invention for example bright silicon electrode.Firstly, taking 0.15g alginic acid
The deionized water of sodium and 6g are placed in a reaction flask immersion about 3-4 hours.Then, with homogenizer with revolving speed under the revolving speed of 100rpm
Simultaneously de-bubble is stirred in reaction flask, mixing time is about 20 minutes.After whipping step completion, by 0.0968g second
The silica-base material of acetylene black and 0.7532g are placed in previous reaction bottle, then are stirred 20 minutes, to obtain combining containing silicon
Object.
Then, it will be coated on containing silicon composition as electrically-conductive backing plate 11 using the scraper of 0.2mm with blade coating technology
Copper foil on to form coating.Then, then at temperature range be 110 DEG C -120 DEG C under conditions of, contain on electrically-conductive backing plate 11
There is the coating of the composition of silicon to carry out drying technology, to form silicon layer 12 on electrically-conductive backing plate 11.After drying technology completion,
The production of silicon electrode 10 is completed.Then, this silicon electrode 10 is placed in corona treatment platform (not shown in the figure),
The distance between silicon electrode 10 and plasma reactor are 1cm and 0.3cm.It then, is 40 cubes per minute being passed through flow
The nitrogen of centimetre (sccm, standard cubic centimeter per minute) and 15 liter per minute (slm,
Standard liter per minute) argon gas, operating pressure be 1 atmospheric pressure (1atm), be respectively in radio frequency (RF) power
25 watts (W), 50 watts and 75 watts carry out plasma reforming step to the surface of silicon layer 12, and number of processing can be come according to that must ask
Setting, can be 1-5 times.
Then, with x-ray photoelectron spectroscopy (X-ray Photoelectron Spectrometer, XPS) to through changing
The surface of the silicon layer 12 of matter is analyzed, to be identified in the intensity for the nitrogen-atoms that the surface of silicon layer 12 is adulterated, result such as table 1
And shown in Fig. 5.In Fig. 5, embodiment 1-7 respectively corresponds silicon layer 12 and plasma reaction without plasma modifying process
The distance between device is the knot that 1cm and 0.3cm carry out processing 1 time, 5 times under the conditions of plasma-based Doped Power is 50 watts (W), 25 watts
Fruit, wherein embodiment 1 is the comparative group of other embodiments 2-7, and numerical value is background value (b.g.).By Fig. 5 it is known that through
After plasma treatment, nitrogen-atoms is contained on the surface of the silicon layer of embodiment 4,5,6 and 7, also demonstrates that nitrogen-atoms has incorporation really
The surface of silicon layer, and its result is also with silicon layer and plasma reaction
| Embodiment | Nitrogen flow (sccm) | Distance (cm) | Power (W) | Number of processes | Nitrogen content (%) |
| 2 | 40 | 1 | 50 | 1 | b.g. |
| 3 | 40 | 1 | 50 | 5 | b.g. |
| 4 | 40 | 0.3 | 50 | 1 | 0.42 |
| 5 | 40 | 0.3 | 50 | 5 | 1.12 |
| 6 | 40 | 0.3 | 25 | 1 | 0.23 |
| 7 | 40 | 0.3 | 25 | 5 | 0.39 |
The distance between device and number increase, while the intensity of nitrogen signal is consequently increased, this also means that incorporation silicon layer
The number of nitrogen atoms of table can regulate and control its number with parameter.
Table 1: plasma modifies the relationship of the process parameter of processing procedure and nitrogen content of silicon layer
Then, silicon layer described in embodiment 5 is cut into size dimension appropriate, such as diameter is 13mm, as storage
The negative electrode of energy device 30, and using metal oxide substrate 32 as positive electrode, and arrange in pairs or groups by polyethylene/polypropylene (PE/
PP) composite membrane is arranged between silicon electrode 10 and oxide substrate 32 containing lithium metal as isolation film 34, wherein isolation film 34
Thickness be about 0.2mm, and with ethylene carbonate (EC, ethylene carbonate), diethyl carbonate (DEC,
Diethylcarbonate) and concentration be 1M LiPF6(Lithium hexafluorophosphate) is used as electrolyte,
To constitute energy storage device 30.The resulting energy storage device of embodiment 5 is subjected to charge-discharge test, obtains charging and discharging curve figure and circulation
Life diagram, it is as shown in FIG. 6 and 7 respectively.
It is shown in Fig. 6 and Fig. 7, the silicon electrode 10 that the silicon layer after modifying by plasma-based is made is not only in first lap
The feature of solid-state electrolytic solution boundary layer, and in the cycle life of silicon electrode 10 and coulomb transfer efficiency all than without etc. from
The silicon electrode of sub- modifying process comes excellent.Separately in Fig. 7's the results show that if on silicon electrode after plasma modifying process
The organic protective film layer of plating, capacitance and coulomb transformation efficiency all have full promotion, reflect substantial effect of the invention.
In summary, compared with prior art, due to disclosed herein silicon electrode, due to its surface by etc.
Ion surface modifying process improves the electrochemical properties of silica-base material, such as capacitance, cycle life and coulomb conversion are imitated
Rate, therefore be suitably applied in energy storage device.
The foregoing is merely preferable possible embodiments of the invention, non-therefore limitation claim of the invention, therefore such as
Using the equivalence techniques variation carried out by description of the invention and diagramatic content, it is both contained in the scope of the invention.
Claims (10)
1. a kind of manufacture craft of silicon based electrode characterized by comprising
Electrically-conductive backing plate is provided；
Silicon layer is formed on the electrically-conductive backing plate；And
Plasma reforming step is executed to the surface of the silicon layer, the plasma reforming step is will be multiple atom doped
Atom doped layer is formed in the surface of the silicon layer, and in the surface.
2. manufacture craft as described in claim 1, which is characterized in that form the silicon layer in the means on the electrically-conductive backing plate
For rubbing method.
3. manufacture craft as claimed in claim 2, which is characterized in that the rubbing method includes wire mark (screen
Printing), method of spin coating (spin coating), rodlike rubbing method (bar coating), scraper for coating method (blade
Coating), roller rubbing method (roller coating) or Dipcoat method (dip coating).
4. manufacture craft as described in claim 1, which is characterized in that the processing power of the plasma reforming step is in 10-
Between 1000 watts (W), number of processes between primary to hundreds of times, with plasma-based reactor between at a distance from it is public at 0.3 centimeter to 1
/ and processing the time between 1 second to 1 hour.
5. manufacture craft as described in claim 1, which is characterized in that the gas adulterated in the plasma reforming step
Source is nitrogen, ammonia, the gas molecule in air or above-mentioned any combination, and the atom doped amount of the atom doped layer exists
Between 0.23-1.12atom%.
6. a kind of silicon based electrode, characterized by comprising:
Electrically-conductive backing plate；
There is the silicon layer of the atom doped layer formed by plasma reforming step in surface, be arranged on the electrically-conductive backing plate；
And
Organic protective film layer is arranged on the atom doped layer.
7. silicon based electrode as claimed in claim 6, which is characterized in that in the described atom doped of the surface of the silicon layer
Atom in layer is nitrogen, ammonia, the gas molecule in air or above-mentioned any combination, and the atom doped layer is atom doped
Amount is between 0.23-1.12atom%.
8. silicon based electrode as claimed in claim 6, which is characterized in that the silicon layer includes silica-base material, adhesive agent and the assistant director of a film or play
Agent.
9. silicon based electrode as claimed in claim 8, which is characterized in that the silica-base material is monocrystalline silicon, polysilicon, nano-silicon
Or recycling silicon material.
10. silicon based electrode as claimed in claim 8, which is characterized in that the adhesive agent is the compound tackifier of water system, You Jizeng
Glutinous agent either combinations of the above.
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| CN102823028A (en) * | 2010-03-26 | 2012-12-12 | 株式会社半导体能源研究所 | Secondary battery and method for manufacturing electrode of the same |
| CN103238240A (en) * | 2010-12-07 | 2013-08-07 | 株式会社半导体能源研究所 | Power storage device |
| CN103840129A (en) * | 2012-11-21 | 2014-06-04 | 财团法人工业技术研究院 | Graphene electrode, energy storage device including the same, and method of manufacturing the same |
| CN103996836A (en) * | 2014-06-14 | 2014-08-20 | 哈尔滨工业大学 | Preparation method and application of alloying silicon-base negative material |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102823028A (en) * | 2010-03-26 | 2012-12-12 | 株式会社半导体能源研究所 | Secondary battery and method for manufacturing electrode of the same |
| CN103238240A (en) * | 2010-12-07 | 2013-08-07 | 株式会社半导体能源研究所 | Power storage device |
| CN103840129A (en) * | 2012-11-21 | 2014-06-04 | 财团法人工业技术研究院 | Graphene electrode, energy storage device including the same, and method of manufacturing the same |
| CN103996836A (en) * | 2014-06-14 | 2014-08-20 | 哈尔滨工业大学 | Preparation method and application of alloying silicon-base negative material |
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Effective date of registration: 20191008 Address after: 10 / F, 15 Minquan Road, East District, Hsinchu, Taiwan, China Co-patentee after: Du Zhenggong Patentee after: Zhijie Energy Co., Ltd. Co-patentee after: Chen Binghong Address before: 10 / F, 15 Minquan Road, East District, Hsinchu, Taiwan, China Co-patentee before: Du Zhenggong Patentee before: Shi Dong Yi Co-patentee before: Chen Binghong |