CN106029295A - 用于借助激光射束从半导体构件去除介电层的方法 - Google Patents

用于借助激光射束从半导体构件去除介电层的方法 Download PDF

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CN106029295A
CN106029295A CN201480074453.7A CN201480074453A CN106029295A CN 106029295 A CN106029295 A CN 106029295A CN 201480074453 A CN201480074453 A CN 201480074453A CN 106029295 A CN106029295 A CN 106029295A
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laser beam
dielectric layer
laser
power density
semiconductor components
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R·迈尔霍费尔
R·亨德尔
朱文杰
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Rofin Baasel Lasertech GmbH and Co KG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0626—Energy control of the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

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  • Physics & Mathematics (AREA)
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Abstract

本发明涉及一种用于借助激光射束从半导体构件去除介电层的方法，其中，用激光射束照射介电层，该激光射束在入射到介电层上时在其横截面上观察具有基本上均匀的功率密度。

Description

用于借助激光射束从半导体构件去除介电层的方法
技术领域
本发明涉及一种用于借助激光射束从半导体构件去除介电层的方法。为了生产太阳能电池，必须从半导体构件、例如从硅晶片去除介电层。迄今为止，为此使用基模激光器，利用所述基模激光器产生激光射束，该激光射束在其圆形的横截面上观察具有高斯形的功率密度。因此，在激光射束的中央得到高的功率密度，而在激光射束的边缘处得到低的功率密度，这在激光射束入射到介电层上时导致在激光射束或者说光斑的中心区域内大的热损坏、而在激光射束或者说光斑的边缘处不足的去除。
背景技术
为了进行损坏少的去除，可以使用极为不同的激光器，这些激光器典型地产生脉冲持续时间从纳秒至飞秒、重复频率在较高的kHz(100至1000kHz)范围内、大多具有很好的射束质量(M2<2)并且波长在可见范围或UV范围内的激光。利用这些激光器产生宽度在30至60μm范围内的轨迹，在这些轨迹中去除介电层。在此，高的重复频率对于高的加工速度因而以及高的生产率有决定作用。迄今为止使用的激光器可以在最高重复频率为高达400kHz时得到典型的最大为5至8m/s的扫描速度。
发明内容
现在，本发明的目的在于，给出一种用于借助激光射束从半导体构件去除介电层的方法，利用该方法可以实现更快速的加工因而以及更高的生产率。
按照本发明，所述目的通过一种具有权利要求1的特征的方法实现。据此，用激光射束照射介电层，该激光射束在入射到介电层上时在其横截面上观察具有基本上均匀的功率密度。
由此实现了可以使用平均功率更高的激光射束，而不发生比在迄今为止使用具有基模射束质量的激光器时更大的对半导体构件的热损坏，并且特别是使由于高斯分布在边缘区域内的损坏或者不足的去除最小化或者避免了该损坏或者不足的去除。因此，可以得到加工速度并且因此可以得到更高的生产率。
在本发明的一种优选的实施方案中，使用功率密度具有Top-Hat(大礼帽)分布轮廓、即类似于柱体/帽的射束分布轮廓的激光射束。这样的激光射束因此在入射到介电层上时、亦即在加工平面内具有在整个横截面上均匀的功率密度。在此，横截面具有圆形形状，但优选也可以具有矩形的、尤其是正方形的形状。优选，在圆形横截面时的直径或在正方形横截面时的边长分别为200μm。
按照本发明的射束分布轮廓可以按简单的方式利用阶跃折射率纤维(Stufenindexfaser)通过如下方式产生，即，利用这样的纤维使激光射束成形。这通过纤维耦合，而不是通过外部光学器件、如衍射光学元件或折射光学元件实现。在这种情况下，为了产生激光射束，可以使用单模激光器或者说基模激光器。
但优选地，利用多模激光器产生激光射束。通过使用多模激光器，可以通过由此产生的激光射束有效地耦合到阶跃折射率纤维中而在加工平面内产生非常均匀的射束分布轮廓，该射束分布轮廓优异地适合于去除介电层并且通过使用高的平均功率能实现比利用迄今为止的基模激光器明显更高的生产率。为了加工，使用脉冲持续时间在10至200ns范围内的脉冲式激光器。重复频率便在10至30kHz的范围内。
为了从半导体构件、例如从硅晶片去除例如通过氮化硅或二氧化硅形成的介电层，例如可以使用平均功率最高达100W并且波长为532nm的激光射束。这样的激光射束可以耦合到直径为100μm的圆形纤维或者边长为100μm的正方形纤维中，从而得到典型的200μm的光斑大小。在激光射束分布轮廓在纤维中均匀化并且转变之后，纤维端部近乎映射(abbilden)到工件上。为此，人们使射束在纤维之后以焦距fkoll扩展并且使其接着以ffok聚焦到工件上。光斑大小便通过(纤维直径或边长*fkoll)/ffok计算得到。在优选的情况下，便由100μm的纤维横截面通过比例ffok/fkoll为2：1得到200μm的光斑。利用这样光斑的钝化的背面的点状开口至少产生与在利用基模激光器的线状开口时相同的或者更好的太阳能电池特性。在这种类型的加工时，要开口的面积在5至10％的范围内。太阳能电池背面被线状地扫描，各激光脉冲在此可以重叠或者也可以不重叠。在以15m/s实施按照本发明的方法时，所使用的扫描速度已经比在基模激光器时几乎高了100％。

Claims (5)

1.用于借助激光射束从半导体构件去除介电层的方法，其中，用激光射束照射介电层，该激光射束在入射到介电层上时在其横截面上观察具有基本上均匀的功率密度。
2.根据权利要求1所述的方法，其中，使用功率密度具有Top-Hat分布轮廓的激光射束。
3.根据权利要求1或2所述的方法，其中，为了光束成形，使用阶跃折射率纤维。
4.根据权利要求3所述的方法，其中，利用多模激光器产生所述激光射束。
5.根据权利要求3所述的方法，其中，利用基模激光器产生所述激光射束。
CN201480074453.7A 2014-01-31 2014-12-10 用于借助激光射束从半导体构件去除介电层的方法 Pending CN106029295A (zh)

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DE102014101235.6A DE102014101235A1 (de) 2014-01-31 2014-01-31 Verfahren zum Abtragen dielektrischer Schichten von Halbleiterbauelementen mittels eines Laserstrahls
PCT/EP2014/077248 WO2015113685A1 (de) 2014-01-31 2014-12-10 Verfahren zum abtragen dielektrischer schichten von halbleiterbauelementen mittels eines laserstrahls

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