CN106024925B - 一种砷化镓低倍聚光太阳能电池 - Google Patents
一种砷化镓低倍聚光太阳能电池 Download PDFInfo
- Publication number
- CN106024925B CN106024925B CN201610578967.7A CN201610578967A CN106024925B CN 106024925 B CN106024925 B CN 106024925B CN 201610578967 A CN201610578967 A CN 201610578967A CN 106024925 B CN106024925 B CN 106024925B
- Authority
- CN
- China
- Prior art keywords
- gallium arsenide
- arsenide cells
- heat radiation
- solar battery
- concentrating solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 74
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000010410 layer Substances 0.000 claims abstract description 35
- 230000005855 radiation Effects 0.000 claims abstract description 34
- 230000005540 biological transmission Effects 0.000 claims abstract description 10
- 239000011241 protective layer Substances 0.000 claims abstract description 10
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 claims abstract description 5
- 230000017525 heat dissipation Effects 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 claims description 4
- 229920002620 polyvinyl fluoride Polymers 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- 229920005992 thermoplastic resin Polymers 0.000 claims description 4
- 239000006058 strengthened glass Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/20—Optical components
- H02S40/22—Light-reflecting or light-concentrating means
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/40—Thermal components
- H02S40/42—Cooling means
- H02S40/425—Cooling means using a gaseous or a liquid coolant, e.g. air flow ventilation, water circulation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开了一种砷化镓低倍聚光太阳能电池，包括低倍聚光器、砷化镓电池组件、散热架和水冷管道，所述砷化镓电池组件设置在低倍聚光器的低倍聚光焦斑所在区域，所述砷化镓电池组件包括框架和从上至下依次层压并装在框架内的透光保护层、第一填充层、砷化镓电池、第二填充层和背板，所述砷化镓电池组件的背面固定连接有若干条形散热架，所述散热架沿砷化镓电池组件背面宽度方向设置，并沿砷化镓电池组件背面长度方向均匀分布，所述散热架之间相互平行，所述水冷管道呈盘蛇状，所述散热架穿过水冷管道的管壁伸入水冷管道内部。本发明提高了发电效率、降低了成本、可以对电池进行有效地降温、提高了散热性能。
Description
技术领域
本发明涉及太阳能电池技术领域，尤其涉及一种砷化镓低倍聚光太阳能电池。
背景技术
随着世界经济的发展，人类对能源的需求越来越大，全球的化石能源日渐枯竭，能源问题日益突出。为了人类社会的可持续发展，开发新能源和可再生洁净能源已成为全世界共同面对的课题。太阳能是太阳内部通过核聚变向外辐射巨大的能量，取之不尽用之不竭，因而以太阳能的开发和利用为核心的可再生能源被认为是解决人类社会能源问题的重要途径之一。现有技术普遍采用高倍聚光光伏太阳能电池发电，其中高倍数聚光器设计与制造工艺上较复杂、精度要求较高、成本也较高，传统的硅太阳能电池光电转换效率较低，太阳光照射下，抗辐射能力差，紫外线，X-Rays，α-Rays等会造成其结构被破坏，造成光衰，使光电转换效率会逐年降低，并且受周围环境(气温，湿度等)影响大，只有12-15年的使用寿命，此外电池工作时，也会产生较高的温度。
发明内容
本发明的目的是为了解决现有技术中存在的缺点，而提出的一种砷化镓低倍聚光太阳能电池。
为了实现上述目的，本发明采用了如下技术方案：
一种砷化镓低倍聚光太阳能电池，包括低倍聚光器、砷化镓电池组件、散热架和水冷管道，所述砷化镓电池组件设置在低倍聚光器的低倍聚光焦斑所在区域，所述砷化镓电池组件包括框架和从上至下依次层压并装在框架内的透光保护层、第一填充层、砷化镓电池、第二填充层和背板，所述砷化镓电池组件的背面固定连接有若干条形散热架，所述散热架沿砷化镓电池组件背面宽度方向设置，并沿砷化镓电池组件背面长度方向均匀分布，所述散热架之间相互平行，所述水冷管道呈盘蛇状，所述散热架穿过水冷管道的管壁伸入水冷管道内部。
优选的，所述低倍聚光器为V型槽式聚光器，所述V型槽式聚光器包括按中轴线对称倾斜设置的两个平面反射镜和设置在两个平面反射镜顶端的透明盖板A。
优选的，所述低倍聚光器为复合抛物面聚光器，所述复合抛物面聚光器包括按中轴线对称设置的两个抛物线型反射镜和设置在两个抛物线型反射镜顶端的透明盖板B。
优选的，所述散热架的横截面呈倒立的字母T的形状。
优选的，所述砷化镓电池由上至下依次为正电极、窗口层、发射层、GaAs层、背场、缓冲层、N型衬底、背面电极。
优选的，所述透光保护层采用强化玻璃或透明薄膜材料制成。
优选的，所述第一填充层和第二填充层均采用热可塑性树脂EVA材料制成。
优选的，所述框架采用铝材料制成。
优选的，所述水冷管道的一端为进水口，另一端为出水口。
优选的，所述背板采用TPT聚氟乙烯复合膜材料制成。
本发明中，低倍聚光器在设计与制造工艺上更为简单，精度要求大大低于高倍聚光系统，成本也较为偏低，砷化镓电池采用砷化镓半导体材料制成，其带隙宽度Eg为1.43eV，处在最高转换效率的区间内，提高了发电效率，砷化镓材料的光衰性基本不存在，它抗辐射能力强，不受紫外线，X-Rays，α-Rays等的影响，因此它的使用寿命可以保证在25年以上，远长于传统的硅太阳能电池材料；砷化镓太阳能电池的耐高温性要好于硅太阳能电池，砷化镓太阳能电池可以在250℃的情况下正常工作，但硅太阳能电池在超过200℃后便无法正常运行，另外，在光谱覆盖范围方面，硅太阳能电池只能吸收转换500-1100纳米范围内的太阳光，砷化镓太阳能电池能够吸收转换300-1800纳米光谱范围内的太阳光，吸收光子更全面，从而达到更高的发电量；散热架可以传导热量，水冷管道中的流水可以带走散热架中的热量；在N型衬底与背场之间采用缓冲层，从而有效解决了N型衬底与砷化镓电池晶格类型不同、晶格常数和热膨胀系数差别大带来的外延生长问题；本发明可以降低成本、发电效率高、实用性强、具有很强的市场应用价值。
附图说明
图1为本发明提出的一种砷化镓低倍聚光太阳能电池的结构示意图。
图2为本发明提出的砷化镓电池组件和水冷管道的结构示意图。
图3为本发明提出的砷化镓电池组件的结构示意图。
图4为本发明提出的砷化镓电池的结构示意图。
图5为本发明提出的一种砷化镓低倍聚光太阳能电池的第二结构示意图。
图中：1砷化镓电池组件、2散热架、3水冷管道、4平面反射镜、5透明盖板A、6抛物线型反射镜、7透明盖板B、8框架、9透光保护层、10第一填充层、11砷化镓电池、12第二填充层、13背板、14正电极、15窗口层、16发射层、17GaAs层、18背场、19缓冲层、20N型衬底、21背面电极。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。
实施例一：
参照图1-4，一种砷化镓低倍聚光太阳能电池，包括低倍聚光器、砷化镓电池组件1、散热架2和水冷管道3，砷化镓电池组件1设置在低倍聚光器的低倍聚光焦斑所在区域，砷化镓电池组件1包括框架8和从上至下依次层压并装在框架8内的透光保护层9、第一填充层10、砷化镓电池11、第二填充层12和背板13，砷化镓电池组件1的背面固定连接有若干条形散热架2，散热架2沿砷化镓电池组件1背面宽度方向设置，并沿砷化镓电池组件1背面长度方向均匀分布，散热架2之间相互平行，水冷管道3呈盘蛇状，散热架2穿过水冷管道3的管壁伸入水冷管道3内部。
低倍聚光器为V型槽式聚光器，V型槽式聚光器包括按中轴线对称倾斜设置的两个平面反射镜4和设置在两个平面反射镜4顶端的透明盖板A5，散热架2的横截面呈倒立的字母T的形状，散热面积更广，砷化镓电池11由上至下依次为正电极14、窗口层15、发射层16、GaAs层17、背场18、缓冲层19、N型衬底20、背面电极21，透光保护层9采用强化玻璃或透明薄膜材料制成，第一填充层10和第二填充层12均采用热可塑性树脂EVA材料制成，EVA材料绝缘性好、又具有良好的导热和缓蚀性能，框架8采用铝材料制成，水冷管道3的一端为进水口，另一端为出水口，背板13采用TPT聚氟乙烯复合膜材料制成。
实施例二：
参照图2-5，一种砷化镓低倍聚光太阳能电池，包括低倍聚光器、砷化镓电池组件1、散热架2和水冷管道3，砷化镓电池组件1设置在低倍聚光器的低倍聚光焦斑所在区域，砷化镓电池组件1包括框架8和从上至下依次层压并装在框架8内的透光保护层9、第一填充层10、砷化镓电池11、第二填充层12和背板13，砷化镓电池组件1的背面固定连接有若干条形散热架2，散热架2沿砷化镓电池组件1背面宽度方向设置，并沿砷化镓电池组件1背面长度方向均匀分布，散热架2之间相互平行，水冷管道3呈盘蛇状，散热架2穿过水冷管道3的管壁伸入水冷管道3内部。
低倍聚光器为复合抛物面聚光器，复合抛物面聚光器包括按中轴线对称设置的两个抛物线型反射镜6和设置在两个抛物线型反射镜6顶端的透明盖板B7，散热架2的横截面呈倒立的字母T的形状，散热面积更广，砷化镓电池11由上至下依次为正电极14、窗口层15、发射层16、GaAs层17、背场18、缓冲层19、N型衬底20、背面电极21，透光保护层9采用强化玻璃或透明薄膜材料制成，第一填充层10和第二填充层12均采用热可塑性树脂EVA材料制成，EVA材料绝缘性好、又具有良好的导热和缓蚀性能，框架8采用铝材料制成，水冷管道3的一端为进水口，另一端为出水口，背板13采用TPT聚氟乙烯复合膜材料制成。
工作时，阳光经低倍聚光器照射到砷化镓电池组件1上，砷化镓电池组件1工作产生的热能传递到散热架2上，水从水冷管道3的进水口流入，流动的水可以带走散热架2中的热量。
以上所述，仅为本发明较佳的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，根据本发明的技术方案及其发明构思加以等同替换或改变，都应涵盖在本发明的保护范围之内。
Claims (9)
1.一种砷化镓低倍聚光太阳能电池，其特征在于：包括低倍聚光器、砷化镓电池组件、散热架和水冷管道，所述砷化镓电池组件设置在低倍聚光器的低倍聚光焦斑所在区域，所述砷化镓电池组件包括框架和从上至下依次层压并装在框架内的透光保护层、第一填充层、砷化镓电池、第二填充层和背板，所述砷化镓电池组件的背面固定连接有若干条形散热架，所述散热架沿砷化镓电池组件背面宽度方向设置，并沿砷化镓电池组件背面长度方向均匀分布，所述散热架之间相互平行，所述水冷管道呈盘蛇状，所述散热架穿过水冷管道的管壁伸入水冷管道内部，所述散热架的横截面呈倒立的字母T的形状。
2.根据权利要求1所述的砷化镓低倍聚光太阳能电池，其特征在于：所述低倍聚光器为V型槽式聚光器，所述V型槽式聚光器包括按中轴线对称倾斜设置的两个平面反射镜和设置在两个平面反射镜顶端的透明盖板A。
3.根据权利要求1所述的砷化镓低倍聚光太阳能电池，其特征在于：所述低倍聚光器为复合抛物面聚光器，所述复合抛物面聚光器包括按中轴线对称设置的两个抛物线型反射镜和设置在两个抛物线型反射镜顶端的透明盖板B。
4.根据权利要求1所述的砷化镓低倍聚光太阳能电池，其特征在于：所述砷化镓电池由上至下依次为正电极、窗口层、发射层、GaAs层、背场、缓冲层、N型衬底、背面电极。
5.根据权利要求1所述的砷化镓低倍聚光太阳能电池，其特征在于：所述透光保护层采用强化玻璃或透明薄膜材料制成。
6.根据权利要求1所述的砷化镓低倍聚光太阳能电池，其特征在于：所述第一填充层和第二填充层均采用热可塑性树脂EVA材料制成。
7.根据权利要求1所述的砷化镓低倍聚光太阳能电池，其特征在于：所述框架采用铝材料制成。
8.根据权利要求1所述的砷化镓低倍聚光太阳能电池，其特征在于：所述水冷管道的一端为进水口，另一端为出水口。
9.根据权利要求1所述的砷化镓低倍聚光太阳能电池，其特征在于：所述背板采用TPT聚氟乙烯复合膜材料制成。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610578967.7A CN106024925B (zh) | 2016-07-21 | 2016-07-21 | 一种砷化镓低倍聚光太阳能电池 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610578967.7A CN106024925B (zh) | 2016-07-21 | 2016-07-21 | 一种砷化镓低倍聚光太阳能电池 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106024925A CN106024925A (zh) | 2016-10-12 |
| CN106024925B true CN106024925B (zh) | 2018-04-13 |
Family
ID=57117063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610578967.7A Expired - Fee Related CN106024925B (zh) | 2016-07-21 | 2016-07-21 | 一种砷化镓低倍聚光太阳能电池 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106024925B (zh) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4002031A (en) * | 1975-07-07 | 1977-01-11 | Varian Associates, Inc. | Solar energy converter with waste heat engine |
| CN101882641A (zh) * | 2010-06-03 | 2010-11-10 | 普尼太阳能(杭州)有限公司 | 一种低倍聚光的光伏组件 |
| CN202816913U (zh) * | 2012-10-24 | 2013-03-20 | 中国电子科技集团公司第三十八研究所 | 微通道液冷热沉装置 |
| CN103515462A (zh) * | 2012-06-28 | 2014-01-15 | 山东浪潮华光光电子股份有限公司 | 一种含复合DBR的Ge基GaAs薄膜单结太阳能电池及其制备方法 |
-
2016
- 2016-07-21 CN CN201610578967.7A patent/CN106024925B/zh not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4002031A (en) * | 1975-07-07 | 1977-01-11 | Varian Associates, Inc. | Solar energy converter with waste heat engine |
| CN101882641A (zh) * | 2010-06-03 | 2010-11-10 | 普尼太阳能(杭州)有限公司 | 一种低倍聚光的光伏组件 |
| CN103515462A (zh) * | 2012-06-28 | 2014-01-15 | 山东浪潮华光光电子股份有限公司 | 一种含复合DBR的Ge基GaAs薄膜单结太阳能电池及其制备方法 |
| CN202816913U (zh) * | 2012-10-24 | 2013-03-20 | 中国电子科技集团公司第三十八研究所 | 微通道液冷热沉装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106024925A (zh) | 2016-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Ju et al. | A review of concentrated photovoltaic-thermal (CPVT) hybrid solar systems with waste heat recovery (WHR) | |
| Jaaz et al. | Design and development of compound parabolic concentrating for photovoltaic solar collector | |
| Liu et al. | Thermodynamic and optical analysis for a CPV/T hybrid system with beam splitter and fully tracked linear Fresnel reflector concentrator utilizing sloped panels | |
| CN202059353U (zh) | 高倍聚光太阳能光伏光热复合发电系统 | |
| Srivastava et al. | Simulation studies of thermal and electrical performance of solar linear parabolic trough concentrating photovoltaic system | |
| Zhang et al. | Concentrating PV/T hybrid system for simultaneous electricity and usable heat generation: a review | |
| CN2847686Y (zh) | 聚光集热式太阳能温差发电装置 | |
| CN102589159B (zh) | 真空管光伏光热复合抛物面聚光器 | |
| Manokar et al. | Performance analysis of parabolic trough concentrating photovoltaic thermal system | |
| CN106160658B (zh) | 一种聚光型全光谱的太阳能光伏光热联合系统 | |
| US20220311378A1 (en) | Hybrid receiver for concentrated photovoltaic-thermal power systems, and associated methods | |
| Wang et al. | Theoretical and experimental study on the uniformity of reflective high concentration photovoltaic system with light funnel | |
| WO2023216617A1 (zh) | 分光吸收集热组件、光伏热电联供系统及电能存储系统 | |
| WO2007079657A1 (fr) | Dispositif tres efficace utilisant l'energie solaire | |
| CN206059405U (zh) | 一种砷化镓聚光太阳能电池 | |
| JP2016114252A (ja) | トラフ型反射鏡 | |
| CN106024925B (zh) | 一种砷化镓低倍聚光太阳能电池 | |
| CN103411754B (zh) | 反射式聚光光伏聚光器光斑强度分布测量方法 | |
| CN111953290B (zh) | 一种热电联合多功能玻璃装置 | |
| CN204257677U (zh) | 一种矩阵型聚光光伏光热一体化装置 | |
| Mo et al. | Performance of a passively cooled Fresnel lens concentrating photovoltaic module | |
| WO2014176881A1 (zh) | 一种管状聚光光伏电池组件 | |
| CN111464131B (zh) | 抗风型防冻高聚光光伏-光热太阳能综合利用系统 | |
| CN202996871U (zh) | 一种聚光反射式光伏模组的发电、供热联产装置 | |
| CN201804879U (zh) | 带热交换器的聚光太阳能电池组件 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180413 Termination date: 20210721 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |