CN106024911A - Glass passivation diode U-type packaging structure and packaging method thereof - Google Patents
Glass passivation diode U-type packaging structure and packaging method thereof Download PDFInfo
- Publication number
- CN106024911A CN106024911A CN201610584367.1A CN201610584367A CN106024911A CN 106024911 A CN106024911 A CN 106024911A CN 201610584367 A CN201610584367 A CN 201610584367A CN 106024911 A CN106024911 A CN 106024911A
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- electrode
- diode
- weld tabs
- electrode slice
- encapsulating structure
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000011521 glass Substances 0.000 title claims abstract description 12
- 238000002161 passivation Methods 0.000 title abstract description 6
- 238000004806 packaging method and process Methods 0.000 title abstract 6
- 238000003466 welding Methods 0.000 claims abstract description 8
- 238000005245 sintering Methods 0.000 claims abstract description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 8
- 238000005538 encapsulation Methods 0.000 claims description 8
- 238000012856 packing Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000009434 installation Methods 0.000 abstract description 2
- 238000005476 soldering Methods 0.000 abstract description 2
- 230000008014 freezing Effects 0.000 description 2
- 238000007710 freezing Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000009527 percussion Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Abstract
The invention provides a glass passivation diode U-type packaging structure, which comprises an electrode, wherein a die is arranged at the middle part of the electrode, the exterior of the electrode is provided with glass through sintering, both ends of the electrode are provided with electrode plates, and the electrode plates sleeve electrode lead wires and welded on the electrode by means of soldering terminals. According to the glass passivation diode U-type packaging structure and a packaging method thereof provided by the invention, the welding strength of the electrode plates and welding heat resistance of products are significantly improved by adopting the new technology and welding technique, highly-reliable U-type packaging of a glass passivation diode is realized, and the problem of axial glass passivation diode U-type design is solved; moreover, in the design of the whole machine circuit, a U-type glass-passivation-packaged semiconductor device has the advantages of small occupied space, convenient installation and high reliability, and better semiconductor devices are provided for the whole machine design through the solution of the problem; and the proportion of patch type devices in the circuit design is increased year by year, and the solution of the problem creates new economic growth points for the company.
Description
Technical field
The present invention relates to field of electrical components, particularly relate to a kind of U-shaped envelope of glassivation diode
Assembling structure and method for packing thereof.
Background technology
Along with the development of science and technology, electron trade to the electrical property of semiconductor device, reliability,
Stability, small form factor requirements are more and more higher, and glassivation diode is due to its superior performance quilt
It is widely used in highly reliable field.But in use there is also some problems, existing
Glassivation diode mostly is axial direction device, when installing, need to be carried out by the lead-in wire of device
Bend process, weld the most again on circuit boards.Employing axial direction device has the disadvantage that:
1) axial direction device installation process is more complicated, need to first be bended by lead-in wire.
2) axial direction device is during bending, if misoperation, is easily generated mechanical stress, shadow
The reliability of Chinese percussion instrument part.
3) axial direction device is taken up space relatively big in the line, affects the Miniaturization Design of complete machine.
4) axial direction device is not suitable for multilayer circuit board design and the modularized design of complete machine.
Summary of the invention
For solving above-mentioned technical problem, the invention provides a kind of U-shaped envelope of glassivation diode
Assembling structure and method for packing thereof.
The present invention is achieved by the following technical programs.
A kind of U-shaped encapsulating structure of glassivation diode that the present invention provides；Including electrode, electrode
Middle part is provided with tube core, and the outside sintering of electrode has glass, and the two ends of electrode are provided with electrode, electricity
Pole piece through contact conductor and is welded on electrode by weld tabs.
Described electrode is molybdenum electrode.
Described weld tabs is gold germanium weld tabs.
4, a kind of U-shaped method for packing of glassivation diode, the steps include:
A, electrode slice clean: use acid wash liquid that electrode slice is carried out removing oxide layer process；
B, suit weld tabs: weld tabs is pierced into the root of diode axial two ends lead-in wire；
C, set loading electrode: electrode slice is pierced into the axial two ends of diode and contacts with weld tabs；
D, die-filling: to fix loading welding mould after the bending in the same direction that goes between；
E, freeze: mould is put into the stove that freezes, and freeze 40min；
F, unnecessary lead-in wire is wiped out along electrode slice root, electrode slice surface is being carried out smooth place
Reason.
Described acid wash liquid is the hydrochloric acid solution of 3%.
The described protective gas freezed in stove is nitrogen, described in the temperature that freezes be 385～395 DEG C.
Described electrode slice surface uses 400#～1200# waterproof abrasive paper to polish successively.
Described weld tabs is gold germanium weld tabs.
The beneficial effects of the present invention is: use new process and solder technology at very great Cheng
The resistance to soldering heat ability of freeze intensity and the product of product electrode slice is improve, it is achieved that glass on degree
The highly reliable U-shaped encapsulation of glass diode passivation, solves axial glassivation diode U-shaped
The problem of design；In the design of machine line, the semiconductor device of U-shaped glassivation encapsulation
Having the advantage little, easy for installation, that reliability is high that takes up room, the solution of this problem is complete machine
Design provides more excellent semiconductor device.SMD device ratio in circuit designs is year by year
Increasing, the solution of this problem is that company has opened up new growth engines.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention；
In figure: 1-electrode slice, 2-electrode, 3-tube core, 4-glass, 5-weld tabs, 6-contact conductor.
Detailed description of the invention
Technical scheme is described further below, but claimed scope is not limited to
In described.
A kind of U-shaped encapsulating structure of glassivation diode as depicted；Including electrode 2, electrode 2
Middle part is provided with tube core 3, and the outside sintering of electrode 2 has glass 4, the two ends of electrode 2 to be provided with electrode
2, electrode slice 1 welds on the electrodes 2 through contact conductor 6 and by weld tabs 5.
Described electrode 2 is molybdenum electrode.Molybdenum electrode elevated temperature strength is high, high-temperature oxidation resistance is good,
Make diode service life long.
Described weld tabs 5 is gold germanium weld tabs.Gold germanium weld tabs have low contact resistance and substrate adhesion is good,
High conductivity and heat conductivity, make diode behavior strengthen.
A kind of U-shaped method for packing of glassivation diode, the steps include:
A, electrode slice clean: use acid wash liquid that electrode slice is carried out removing oxide layer process；
B, suit weld tabs: weld tabs is pierced into the root of diode axial two ends lead-in wire；
C, set loading electrode: electrode slice is pierced into the axial two ends of diode and contacts with weld tabs；
D, die-filling: to fix loading welding mould after the bending in the same direction that goes between；
E, freeze: mould is put into the stove that freezes, and freeze 40min；
F, unnecessary lead-in wire is wiped out along electrode slice root, electrode slice surface is being carried out smooth place
Reason.
Described acid wash liquid is the hydrochloric acid solution of 3%.Hydrion in hydrochloric acid solution can be effective
Reduction-oxidation layer.
The described protective gas freezed in stove is nitrogen, described in the temperature that freezes be 385～395 DEG C.
Described electrode slice surface uses 400#～1200# waterproof abrasive paper to polish successively.
Described weld tabs is gold germanium weld tabs.Gold germanium weld tabs is eutectic solder, makes diode freeze temperature
Degree reduces.
Embodiment 1,
Electrode slice cleans:
Electrode slice cleans mainly treats, with acid wash liquid (3% hydrochloric acid solution), the electrode freezed
Sheet is removed oxide layer and processes.
Die-filling:
First circular gold germanium weld tabs (Φ 2.4*1.0* Φ 0.12mm) with holes is pierced into axially respectively
The root of diode two ends lead-in wire, pierces into the two of lead-in wire more successively by electrode slice with holes
End.With tweezers, lead-in wire is bended, be loaded into welding mould and fix.
Freeze:
Will be equipped with the mould of product to put into the stove that freezes and freeze, protective gas is nitrogen, freezes
Temperature is 390 DEG C, and the time of freezing is 40min.
Leadcut:
With clamp, unnecessary lead-in wire is cut along electrode slice root, then electrode slice surface is used 500#
1000# liquid honing is used after liquid honing.
Embodiment 2,
Electrode slice cleans:
Electrode slice cleans mainly treats, with acid wash liquid (3% hydrochloric acid solution), the electrode freezed
Sheet is removed oxide layer and processes.
Die-filling:
First circular gold germanium weld tabs (Φ 2.4*1.0* Φ 0.12mm) with holes is pierced into axially respectively
The root of diode two ends lead-in wire, pierces into the two of lead-in wire more successively by electrode slice with holes
End.With tweezers, lead-in wire is bended, be loaded into welding mould and fix.
Freeze:
Will be equipped with the mould of product to put into the stove that freezes and freeze, protective gas is nitrogen, freezes
Temperature is 395 DEG C, and the time of freezing is 40min.
Leadcut:
With clamp, unnecessary lead-in wire is cut along electrode slice root, then electrode slice surface is used 600#
1000# liquid honing is used after liquid honing.
Claims (8)
1. the U-shaped encapsulating structure of glassivation diode, it is characterised in that: include electrode (2),
Electrode (2) middle part is provided with tube core (3), and the outside sintering of electrode (2) has glass (4),
The two ends of electrode (2) are provided with electrode (2), and electrode slice (1) passes contact conductor (6)
And be welded on electrode (2) by weld tabs (5).
2. the U-shaped encapsulating structure of glassivation diode as claimed in claim 1 and encapsulation side thereof
Method, it is characterised in that: described electrode (2) is molybdenum electrode.
3. the U-shaped encapsulating structure of glassivation diode as claimed in claim 1 and encapsulation side thereof
Method, it is characterised in that: described weld tabs (5) is gold germanium weld tabs.
4. the U-shaped method for packing of glassivation diode, it is characterised in that the steps include:
A, electrode slice clean: use acid wash liquid that electrode slice is carried out removing oxide layer process；
B, suit weld tabs: weld tabs is pierced into the root of diode axial two ends lead-in wire；
C, set loading electrode: electrode slice is pierced into the axial two ends of diode and contacts with weld tabs；
D, die-filling: to fix loading welding mould after the bending in the same direction that goes between；
E, freeze: mould is put into the stove that freezes, and freeze 40min；
F, unnecessary lead-in wire is wiped out along electrode slice root, electrode slice surface is being carried out smooth place
Reason.
5. the U-shaped encapsulating structure of glassivation diode as claimed in claim 4 and encapsulation side thereof
Method, it is characterised in that: described acid wash liquid is the hydrochloric acid solution of 3%.
6. the U-shaped encapsulating structure of glassivation diode as claimed in claim 4 and encapsulation side thereof
Method, it is characterised in that the protective gas in stove that freezes described in: is nitrogen, described in the temperature that freezes be
385～395 DEG C.
7. the U-shaped encapsulating structure of glassivation diode as claimed in claim 4 and encapsulation side thereof
Method, it is characterised in that: described electrode slice surface uses 400#～1200# waterproof abrasive paper to polish successively.
8. the U-shaped encapsulating structure of glassivation diode as claimed in claim 4 and encapsulation side thereof
Method, it is characterised in that: described weld tabs is gold germanium weld tabs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610584367.1A CN106024911B (en) | 2016-07-23 | 2016-07-23 | A kind of U-shaped packaging method of glassivation diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610584367.1A CN106024911B (en) | 2016-07-23 | 2016-07-23 | A kind of U-shaped packaging method of glassivation diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106024911A true CN106024911A (en) | 2016-10-12 |
| CN106024911B CN106024911B (en) | 2019-07-09 |
Family
ID=57117582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610584367.1A Active CN106024911B (en) | 2016-07-23 | 2016-07-23 | A kind of U-shaped packaging method of glassivation diode |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107301949A (en) * | 2017-07-17 | 2017-10-27 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of use tungsten electrode manufactures the manufacture method of highly reliable transient voltage suppressor diode |
| CN108172514A (en) * | 2017-12-27 | 2018-06-15 | 中国振华集团永光电子有限公司（国营第八三七厂） | A kind of manufacturing method of glassivation surface mount packages transient voltage suppressor diode |
| CN112151417A (en) * | 2020-09-11 | 2020-12-29 | 中国振华集团永光电子有限公司（国营第八七三厂） | U-shaped packaging welding die |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200976348Y (en) * | 2006-11-01 | 2007-11-14 | 程一凡 | Novel structure for diode |
| CN104008970A (en) * | 2014-06-17 | 2014-08-27 | 安徽芯旭半导体有限公司 | Glassivation diode chip and manufacturing method thereof |
| CN104659111A (en) * | 2015-02-11 | 2015-05-27 | 中国振华集团永光电子有限公司（国营第八七三厂） | Micro commutation diode supporting glass passivation packaging |
-
2016
- 2016-07-23 CN CN201610584367.1A patent/CN106024911B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200976348Y (en) * | 2006-11-01 | 2007-11-14 | 程一凡 | Novel structure for diode |
| CN104008970A (en) * | 2014-06-17 | 2014-08-27 | 安徽芯旭半导体有限公司 | Glassivation diode chip and manufacturing method thereof |
| CN104659111A (en) * | 2015-02-11 | 2015-05-27 | 中国振华集团永光电子有限公司（国营第八七三厂） | Micro commutation diode supporting glass passivation packaging |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107301949A (en) * | 2017-07-17 | 2017-10-27 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of use tungsten electrode manufactures the manufacture method of highly reliable transient voltage suppressor diode |
| CN108172514A (en) * | 2017-12-27 | 2018-06-15 | 中国振华集团永光电子有限公司（国营第八三七厂） | A kind of manufacturing method of glassivation surface mount packages transient voltage suppressor diode |
| CN112151417A (en) * | 2020-09-11 | 2020-12-29 | 中国振华集团永光电子有限公司（国营第八七三厂） | U-shaped packaging welding die |
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| CN106024911B (en) | 2019-07-09 |
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