CN106024597A - Silicon carbide ohmic contact forming method - Google Patents
Silicon carbide ohmic contact forming method Download PDFInfo
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- CN106024597A CN106024597A CN201610366410.7A CN201610366410A CN106024597A CN 106024597 A CN106024597 A CN 106024597A CN 201610366410 A CN201610366410 A CN 201610366410A CN 106024597 A CN106024597 A CN 106024597A
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- ohmic contact
- forming method
- annealing
- carborundum
- ion
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 34
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 4
- 238000000137 annealing Methods 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000004151 rapid thermal annealing Methods 0.000 claims abstract description 6
- 230000003647 oxidation Effects 0.000 claims abstract description 5
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 5
- 150000002500 ions Chemical class 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 238000002513 implantation Methods 0.000 claims description 8
- -1 Nitrogen ion Chemical class 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 4
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 150000002739 metals Chemical class 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000007769 metal material Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910016384 Al4C3 Inorganic materials 0.000 description 1
- 229910005487 Ni2Si Inorganic materials 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- 229910010380 TiNi Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a silicon carbide ohmic contact forming method, which comprises the following steps of: (1) firstly, carrying out ion implantation in areas in which an n-type ohmic contact and a p-type ohmic contact need to be formed respectively; (2) depositing a carbon layer on the surface of an SiC material; (3) carrying out high-temperature annealing, removing the carbon layer, carrying out a sacrifice oxidation process and removing a damaged layer on the surface of the SiC material; (4) depositing ohmic contact metals, carrying out patterning, removing the metal outside the ohmic contact areas and only reserving the metals in the ohmic contact areas; and (5) carrying out rapid thermal annealing and then forming the p-type ohmic contact and the n-type ohmic contact in a P++ area and an N++ area respectively. By the method, the n-type ohmic contact and the p-type ohmic contact can be simultaneously formed, so that the process step is reduced; and the process cost is reduced.
Description
Technical field
The present invention relates to a kind of carborundum Ohmic contact forming method.
Background technology
A key technology in carborundum (SiC) device is the formation of Ohmic contact.The quality of Ohmic contact is directly connected to size and the long-term reliability of device on-resistance.The Ohmic contact of high-quality low contact resistance value be formed with two conditions, one is heavy doping, two be formed low contact berrier layer.Wherein, according to the requirement of low contact berrier, in SiC material, p-type ohm and the metal material used by N-shaped Ohmic contact are different.Metal material used by N-shaped Ohmic contact is generally Ni or TiNi, and wherein Ni reaction generates Ni2Si, Ti reaction generates Ti3SiC4Deng compound.Metal material used by p-type Ohmic contact is generally TiAl, or NiTiAl ternary metal, and wherein Al reaction generates Al4C3, additionally Al also has the effect supplementing doping.Therefore, N-shaped Ohmic contact and p-type metal ohmic contact scheme are different, generally require and separately carry out independent technique.
Summary of the invention
For problems of the prior art, it is an object of the invention to provide a kind of carborundum Ohmic contact forming method, the method can concurrently form N-shaped and p-type Ohmic contact, reduces processing step, reduces process costs.
For achieving the above object, the present invention is by the following technical solutions:
A kind of carborundum Ohmic contact forming method, described forming method comprises the steps:
1) first the region forming N-shaped and p-type Ohmic contact is being needed to carry out ion implanting respectively；
2) at one layer of carbon-coating of SiC material surface deposition；
3) high annealing carried out, removes described carbon-coating after annealing；Carry out sacrificial oxidation process again, remove the damage layer on SiC material surface；
4) deposit metal ohmic contact and be patterned, removing the metal beyond ohmic contact regions, only retaining the metal in ohmic contact regions；
5) carrying out rapid thermal annealing, annealing Hou P++ district and N++ district form respectively p-type Ohmic contact and N-shaped Ohmic contact.
Further, in step 1), N-shaped injects ion is Nitrogen ion or phosphonium ion, and implantation concentration is more than 1E19cm-3, form the doping of high concentration to the internal 200-300nm degree of depth on surface.
Further, in step 1), p-type area injects ion is aluminium ion, and p-type area is divided into upper and lower two-layer injection zone, at upper strata implantation concentration more than 5E20cm-3, upper strata is that the internal 100-200nm degree of depth is arrived on surface；The concentration injected in lower floor is 1E19-1E20 cm-3Between, lower floor is below the upper strata 100-200nm degree of depth.
Further, what step 1) intermediate ion injected is all carried out at a temperature of 500 DEG C.
Further, step 2) described in the thickness of carbon-coating be 20nm-200nm.
Further, in step 3), the temperature of high annealing is 1600-1800 DEG C, and annealing time is 5-30 minute.
Further, the thickness damaging layer described in step 3) is 10-20nm.
Further, metal ohmic contact described in step 4) is Ti and Ni.
Further, upper strata metal ohmic contact be the thickness of Ti, Ti be 10nm-20nm, when lower floor's metal ohmic contact is Ni, the thickness of Ni is 80-150nm.
Further, in step 5), annealing temperature is 950 DEG C-1050 DEG C, and annealing time is 1-5 minute.
The present invention has a following Advantageous Effects:
The present processes is utilized respectively ion implanting and forms N-shaped and p-type heavy doping, deposits same metal material and carries out rapid thermal annealing, concurrently forming N-shaped and p-type carborundum Ohmic contact.The present invention can be used for such as SiC
The Ohmic contact of the various SiC device such as MOSFET, IGBT, can concurrently form N-shaped and p-type Ohmic contact, reduces processing step, reduces process costs.
Accompanying drawing explanation
Fig. 1 is that the method by the present invention concurrently forms N-shaped and the schematic diagram of p-type carborundum Ohmic contact；
Fig. 2 is the structural representation that the present invention carries out ion implanting；
Fig. 3 is the present invention structural representation at one layer of carbon-coating of SiC material surface deposition；
Fig. 4 is the high annealing that the present invention is carried out, then carries out the structural representation of sacrificial oxidation process；
Fig. 5 is that the present invention deposits metal ohmic contact and carries out patterned structural representation；
Fig. 6 is the structural representation that the present invention carries out rapid thermal annealing；
1-SiC epitaxial layer, 2-n type Ohmic contact, 3-p type Ohmic contact, 4-upper strata, 5-lower floor, 6-carbon-coating, 7-Ti layer, 8-Ni layer in figure.
Detailed description of the invention
Below, with reference to accompanying drawing, the present invention is more fully illustrated, shown in the drawings of the exemplary embodiment of the present invention.But, the present invention can be presented as multiple multi-form, is not construed as the exemplary embodiment being confined to describe here.And it is to provide these embodiments, so that the present invention is fully and completely, and will fully convey the scope of the invention to those of ordinary skill in the art.
For ease of explanation, here can use such as " on ", the space relative terms such as D score " left " " right ", for shown in explanatory diagram a element or feature relative to another element or the relation of feature.It should be understood that in addition to the orientation shown in figure, spatial terminology is intended to include device different azimuth in use or operation.Such as, if the device in figure is squeezed, be stated as being positioned at the element of other elements or feature D score will be located into other elements or feature " on ".Therefore, exemplary term D score can comprise upper and lower both orientation.Device can otherwise position (90-degree rotation or be positioned at other orientation), relatively illustrates used herein of space correspondingly to explain.
As it is shown in figure 1, the Ohmic contact pattern of reality has multiple multi-form, but can be by the method for the present invention.In upper strata 4, aluminum ions implantation concentration is more than 1E21cm-3, after annealing, the subregion near surface can form amorphous or polycrystalline structure, and interior section region easily forms 3C structure.3C structure reduces energy gap and barrier height, and the aluminum atom of excess can also react with SiC and Ti/Ni in annealing simultaneously, the Ohmic contact easily formed.
This method is divided into following steps:
Step one: as in figure 2 it is shown, first needing the region forming N-shaped and p-type Ohmic contact to carry out ion implanting respectively.It can be Nitrogen ion or phosphonium ion that N-shaped injects ion, and implantation concentration is more than 1E19cm-3, forming the doping of high concentration to the internal 200-300nm degree of depth on surface, high doping content is beneficial to the Ohmic contact formed.It is aluminium ion that p-type area injects ion, at upper strata 4 implantation concentration more than 5E20cm-3, upper strata 4 for surface to the internal 100-200nm degree of depth；The concentration injected in lower floor 5 is 1E19-1E20 cm-3Between, lower floor 5 is upper strata less than the 4 100-200nm degree of depth.The implantation concentration on upper strata 4 is the highest, and after annealing, the subregion near surface can form amorphous or polycrystalline structure, and interior section region easily forms 3C structure, and 3C structure reduces energy gap and barrier height, the Ohmic contact easily formed.Ion implanting is all carried out at a temperature of 500 DEG C, and the process of ion implanting is known to industry engineer, does not repeats them here.
Step 2: as it is shown on figure 3, at the thin carbon-coating 6 of SiC epitaxial layer 1 surface deposition one layer, the thickness of carbon-coating 6 can be 20nm-200nm, the purpose of carbon-coating 6 is to protect surface of SiC not degenerate when high temperature activation anneal.
Step 3: as shown in Figure 4, carries out the high annealing of 1600-1800 DEG C, and annealing time can be between 5 minutes to 30 minutes.The activation efficiency injecting ion is the most relevant with annealing temperature, and the highest activity ratio of temperature is the highest.The carbon-coating 6 on surface is removed after annealing.Carry out sacrificial oxidation process again, remove the damage layer of surface about 10nm.
Step 4: as it is shown in figure 5, deposit metal ohmic contact, metal is Ti and Ni.And be patterned, remove the metal beyond ohmic contact regions, only retain the metal in ohmic contact regions.Process, for going known to those skilled in the art, does not repeats them here.Upper strata metal ohmic contact be the thickness of Ti, Ti be 10nm-20nm, when lower floor's metal ohmic contact is Ni, the thickness of Ni is 80-150nm.
Step 5: as shown in Figure 6, carries out rapid thermal annealing, and annealing temperature can be between 950 DEG C-1050 DEG C, and annealing time is between 1 minute-5 minutes, and annealing Hou P++ district and N++ district form respectively p-type Ohmic contact 3 and N-shaped Ohmic contact 2.
Described above simply to illustrate that the present invention, it is understood that to the invention is not limited in above example, meet the various variants of inventive concept all within protection scope of the present invention.
Claims (10)
1. a carborundum Ohmic contact forming method, it is characterised in that described forming method comprises the steps:
1) first the region forming N-shaped and p-type Ohmic contact is being needed to carry out ion implanting respectively；
2) at one layer of carbon-coating of SiC material surface deposition；
3) high annealing carried out, removes described carbon-coating after annealing；Carry out sacrificial oxidation process again, remove the damage layer on SiC material surface；
4) deposit metal ohmic contact and be patterned, removing the metal beyond ohmic contact regions, only retaining the metal in ohmic contact regions；
5) carrying out rapid thermal annealing, annealing Hou P++ district and N++ district form respectively p-type Ohmic contact and N-shaped Ohmic contact.
Carborundum Ohmic contact forming method the most according to claim 1, it is characterised in that in step 1), N-shaped injects ion is Nitrogen ion or phosphonium ion, and implantation concentration is more than 1E19cm-3, form the doping of high concentration to the internal 100-300nm degree of depth on surface.
Carborundum Ohmic contact forming method the most according to claim 1, it is characterised in that in step 1), p-type area injects ion is aluminium ion, and p-type area is divided into upper and lower two-layer injection zone, at upper strata implantation concentration more than 5E20cm-3, upper strata is that the internal 100-200nm degree of depth is arrived on surface；The concentration injected in lower floor is 1E19-1E20 cm-3Between, lower floor is below the upper strata 100-200nm degree of depth.
Carborundum Ohmic contact forming method the most according to claim 1, it is characterised in that what step 1) intermediate ion injected is all carried out at a temperature of 500 DEG C.
Carborundum Ohmic contact forming method the most according to claim 1, it is characterised in that step 2) described in the thickness of carbon-coating be 20nm-200nm.
Carborundum Ohmic contact forming method the most according to claim 1, it is characterised in that in step 3), the temperature of high annealing is 1600-1800 DEG C, annealing time is 5-30 minute.
Carborundum Ohmic contact forming method the most according to claim 1, it is characterised in that the thickness damaging layer described in step 3) is 10-20nm.
Carborundum Ohmic contact forming method the most according to claim 1, it is characterised in that metal ohmic contact described in step 4) is Ti and Ni.
Carborundum Ohmic contact forming method the most according to claim 3, it is characterised in that upper strata metal ohmic contact be the thickness of Ti, Ti be 10nm-20nm, when lower floor's metal ohmic contact is Ni, the thickness of Ni is 80-150nm.
Carborundum Ohmic contact forming method the most according to claim 1, it is characterised in that in step 5), annealing temperature is 950 DEG C-1050 DEG C, annealing time is 1-5 minute.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610366410.7A CN106024597A (en) | 2016-05-30 | 2016-05-30 | Silicon carbide ohmic contact forming method |
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| CN201610366410.7A CN106024597A (en) | 2016-05-30 | 2016-05-30 | Silicon carbide ohmic contact forming method |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546115A (en) * | 2017-09-07 | 2018-01-05 | 中国工程物理研究院电子工程研究所 | A kind of preparation method of SiC high voltage power devices Ohmic contact |
| CN107706096A (en) * | 2017-11-02 | 2018-02-16 | 北京世纪金光半导体有限公司 | A kind of silicon carbide power chip back is thinned and prepared the method and product of Ohmic contact |
| CN107957299A (en) * | 2017-11-27 | 2018-04-24 | 电子科技大学 | A kind of carborundum linear temperature sensor and its temp measuring method and manufacture method |
| CN108231566A (en) * | 2017-12-04 | 2018-06-29 | 北京燕东微电子有限公司 | A kind of forming method of SiC device Ohmic contact |
| CN112234058A (en) * | 2020-09-24 | 2021-01-15 | 芜湖启源微电子科技合伙企业(有限合伙) | SiC MOSFET device integrated with gate protection structure |
| CN116864379A (en) * | 2023-09-05 | 2023-10-10 | 珠海格力电子元器件有限公司 | Method for preparing ohmic contact electrode |
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| CN103907176A (en) * | 2011-12-02 | 2014-07-02 | 住友电气工业株式会社 | Semiconductor device fabrication method |
| CN105448673A (en) * | 2016-01-04 | 2016-03-30 | 株洲南车时代电气股份有限公司 | Forming method for back ohmic contact of silicon carbide device |
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2016
- 2016-05-30 CN CN201610366410.7A patent/CN106024597A/en active Pending
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| CN103262218A (en) * | 2011-01-13 | 2013-08-21 | 住友电气工业株式会社 | Process for manufacture of silicon carbide semiconductor device |
| US20140042462A1 (en) * | 2011-09-08 | 2014-02-13 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546115A (en) * | 2017-09-07 | 2018-01-05 | 中国工程物理研究院电子工程研究所 | A kind of preparation method of SiC high voltage power devices Ohmic contact |
| CN107706096A (en) * | 2017-11-02 | 2018-02-16 | 北京世纪金光半导体有限公司 | A kind of silicon carbide power chip back is thinned and prepared the method and product of Ohmic contact |
| CN107706096B (en) * | 2017-11-02 | 2024-03-15 | 芯合半导体(合肥)有限公司 | Method for thinning back of silicon carbide power chip and preparing ohmic contact and product |
| CN107957299A (en) * | 2017-11-27 | 2018-04-24 | 电子科技大学 | A kind of carborundum linear temperature sensor and its temp measuring method and manufacture method |
| CN107957299B (en) * | 2017-11-27 | 2019-12-27 | 电子科技大学 | Silicon carbide linear temperature sensor and temperature measuring method and manufacturing method thereof |
| CN108231566A (en) * | 2017-12-04 | 2018-06-29 | 北京燕东微电子有限公司 | A kind of forming method of SiC device Ohmic contact |
| CN112234058A (en) * | 2020-09-24 | 2021-01-15 | 芜湖启源微电子科技合伙企业(有限合伙) | SiC MOSFET device integrated with gate protection structure |
| CN116864379A (en) * | 2023-09-05 | 2023-10-10 | 珠海格力电子元器件有限公司 | Method for preparing ohmic contact electrode |
| CN116864379B (en) * | 2023-09-05 | 2023-12-01 | 珠海格力电子元器件有限公司 | Method for preparing ohmic contact electrode |
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