CN106024573B - A kind of photoemission ionization source - Google Patents
A kind of photoemission ionization source Download PDFInfo
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- CN106024573B CN106024573B CN201610496882.4A CN201610496882A CN106024573B CN 106024573 B CN106024573 B CN 106024573B CN 201610496882 A CN201610496882 A CN 201610496882A CN 106024573 B CN106024573 B CN 106024573B
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- electrode
- transparent substrates
- ionization source
- graphene layer
- graphene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
- H01J49/16—Ion sources; Ion guns using surface ionisation, e.g. field-, thermionic- or photo-emission
- H01J49/161—Ion sources; Ion guns using surface ionisation, e.g. field-, thermionic- or photo-emission using photoionisation, e.g. by laser
Abstract
Photoemission ionization source provided by the invention, positive pole is connect with first electrode, power cathode connects second electrode, between the first electrode and second electrode it is intermediate there are sample by channel, wherein, the second electrode includes transparent substrates, the side of the transparent substrates is provided with graphene layer, the graphene layer is oppositely arranged with the first electrode, the other side of the transparent substrates is provided with the ultraviolet ray generating apparatus for irradiation, graphene has certain photoelectric effect in the program, and one layer is directly applied when processing, production is very simple and convenient.
Description
Technical field
The present invention relates to photoelectric fields, and in particular to a kind of photoemission ionization source.
Background technology
Ion source is to make neutral atom or molecular ionization, and therefrom draw the device of ion beam current, is for mass spectrograph etc.
Primary Component in various analytical instrument.The collision of gas discharge, electron beam to gas atom or molecule, charged particle beam make work
Ion can be generated by making substance sputtering and surface ionization process, and be brought out bunchy.According to different use condition and purposes,
A plurality of types of ion sources are had been developed that at present.
Traditional ion mobility spectrometry frequently with ionization source be radioactivity63Ni ionization sources, but the safety inspection that radioactive source is brought
Look into and special safety measure bring many troubles to its practical application, no matter the manufacturing and user's use will spy
Other department's examination & approval.Also, the ion concentration that radioactive source generates is not high, causes the signal of ion mobility spectrometry weaker, the range of linearity
It is small, while there is also unsafe problems during use.
For radioactivity63Ion concentration that Ni ionization sources generate is high, problem that safety is poor, Chinese invention patent
A kind of photoemission ionization source is disclosed in CN101667518A, ultraviolet light metal is utilized in this photoemission ionization source
The photochemical reaction that the photoelectric effect of generation and irradiation carrier gas generate, it includes three parts:Ultraviolet source, metal mesh or gold
Belong to ring and carrier gas.The inner ring of ultraviolet light metal net surface or becket can generate the photoelectron of low energy.Photoelectron
Can be adsorbed onto on determinand makes its ionization, while photoelectron can be adsorbed onto the photochemically reactive product O of carrier gas3On, it obtains
O3 -。O3 -Or its hydrated ion O3 -(H2O)NWith the CO in air2Reaction generates O3 -(H2O)N(N=0-3), CO3 -(H2O)NIt can make
It reacts for reagent ion and determinand, determinand is made to be ionized.But in the technical solution, no matter use metal grid mesh
Or becket, the metal surface of illumination is all limited, and the utilization rate of light is not high, in addition, metal is also higher to the reflectivity of light, into
One step reduces the absorption efficiency of light.In addition, the photoelectric effect stability based on metal is poor, metal surface be easy it is contaminated,
The factors such as oxidation, reduce photoelectronic emission effciency.Therefore the photoelectron total amount generated by ultraviolet light metal is less,
Transformation efficiency is relatively low.
To solve the above problems, disclosing a kind of photoelectricity based on carbon nanotube in Chinese invention patent CN103311089A
The ion source of effect, including ultraviolet emission device and power supply, the positive pole are connect with to electrode；The power cathode connects
Be connected to carbon nanotube electrode, the carbon nanotube electrode includes carbon nanotube layer and substrate, the carbon nanotube layer with it is described right
Electrode is opposite, the carbon nanotube layer and it is described among electrode there are sample by channel；Ultraviolet emission device pair
The carbon nanotube electrode is irradiated；The present invention carries out photoelectric effect to generate ion, carbon nanotube pair using carbon nanotube
The reflectance factor of light is very low, and efficiency of light absorption is higher.But need to grow carbon nanotube on substrate in the program, it produces
Process is more complicated, and needs to spend the more time.
Invention content
Therefore, the technical problem to be solved in the present invention is to overcome in the prior art is added based on photoelectric ionization source
The defect that work is complicated, efficiency is low.
For this purpose, the present invention provides a kind of photoemission ionization source, including power supply, the positive pole connects with first electrode
It connects；The power cathode connects second electrode, between the first electrode and second electrode it is intermediate there are sample by it is logical
Road, which is characterized in that the second electrode includes transparent substrates, the side of the transparent substrates is provided with graphene layer, institute
It states graphene layer to be oppositely arranged with the first electrode, the other side of the transparent substrates is provided with the ultraviolet light for irradiation
Generating means.
Preferably, the thickness of the graphene layer is 1-500 nanometers.
Preferably, the thickness of the graphene layer is 5-300 nanometers.
Preferably, 5-20 nanometers, 100-200 nanometers or 400-500 nanometers of the thickness of the graphene layer.
Preferably, the graphene layer passes through directly graphene coated formation on the transparent substrate.
Preferably, the first electrode is to electrode.
Preferably, the transparent substrates are glass.
Preferably, the graphene layer is coated uniformly on the side of the transparent substrates.
Preferably, further include heating device, the heating device is arranged in the other side of the transparent substrates.
Technical solution of the present invention has the following advantages that：
1. photoemission ionization source provided by the invention, positive pole are connect with first electrode, power cathode connection second
Electrode, between the first electrode and second electrode it is intermediate there are sample by channel, wherein the second electrode includes
Transparent substrates are provided with graphene layer in the side of the transparent substrates, and the graphene layer is opposite with the first electrode to be set
It sets, the other side of the transparent substrates is provided with the ultraviolet ray generating apparatus for irradiation, graphene has one in the program
Fixed photoelectric effect, and one layer is directly applied when processing, production is very simple and convenient.
Description of the drawings
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art are briefly described, it should be apparent that, in being described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, other drawings may also be obtained based on these drawings.
Fig. 1 is the structure chart of a specific example of photoemission ionization source in the embodiment of the present invention 1.
Reference numeral：
1- first electrodes；2- second electrodes；21- graphene layers, 22- substrates, 3- ultraviolet generation devices, 4- heating devices.
Specific implementation mode
Technical scheme of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
The every other embodiment that personnel are obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that term "center", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for the description present invention and simplify description, do not indicate or imply the indicated device or element must have a particular orientation,
With specific azimuth configuration and operation, therefore it is not considered as limiting the invention.In addition, term " first ", " second ",
" third " is used for description purposes only, and is not understood to indicate or imply relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
Can also be electrical connection to be mechanical connection；It can be directly connected, can also indirectly connected through an intermediary, it can be with
It is the connection inside two elements, can be wirelessly connected, can also be wired connection.For those of ordinary skill in the art
For, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.
As long as in addition, technical characteristic involved in invention described below different embodiments non-structure each other
It can be combined with each other at conflict.
Embodiment 1
A kind of photoemission ionization source, including power supply are provided in the present embodiment, the positive pole connects with first electrode 1
It connects；The power cathode connects second electrode 2, between the first electrode 1 and second electrode 2 it is intermediate there are sample by
Channel, wherein the first electrode is to electrode.The second electrode 2 includes transparent substrates 22, which can select
Glass is provided with graphene layer 21 in the side of the transparent substrates 22, and the graphene layer 21 is opposite with the first electrode 1
Setting, the ultraviolet ray generating apparatus 3 for irradiation is provided in the other side of the transparent substrates 22.
In order to ensure that ultraviolet light can pass through substrate illumination on the graphene layer, and the graphene can be passed through, because
The thickness of this graphene is typically chosen in 1-500 nanometers.
As a preferred option, the thickness of graphene layer is 5-300 nanometers.
As specific embodiment, the thickness of the graphene layer is selected as 5-20 nanometers, 100-200 nanometers or 400-
500 nanometers, specially 5 nanometers, 10 nanometers, 20 nanometers, 50 nanometers, 100 nanometers, 200 nanometers, 400 nanometers or 500 nanometers.
The processing method of graphene layer is very simple, and the graphene layer by directly coating stone on the transparent substrate
Black alkene is formed, in order to ensure that effect stability, graphene layer are coated uniformly on the side of the transparent substrates.
In order to improve photoelectric effect, heating device 4 can also be further set, the heating device is arranged described transparent
The other side of substrate, could be provided as ring-type.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes still within the protection scope of the invention.
Claims (6)
1. a kind of photoemission ionization source, including power supply, the positive pole are connect with first electrode；The power cathode connection
Second electrode, between the first electrode and second electrode it is intermediate there are sample by channel, which is characterized in that described the
Two electrodes include transparent substrates, and the side of the transparent substrates is provided with graphene layer, the graphene layer and described first
Electrode is oppositely arranged, and the other side of the transparent substrates is provided with the ultraviolet ray generating apparatus for irradiation, the graphene
The thickness of layer is 5-10 nanometers.
2. photoemission ionization source according to claim 1, which is characterized in that the graphene layer passes through described transparent
Direct graphene coated formation on substrate.
3. photoemission ionization source according to claim 2, which is characterized in that the first electrode is to electrode.
4. photoemission ionization source according to claim 3, which is characterized in that the transparent substrates are glass.
5. the photoemission ionization source according to the claim 4, which is characterized in that the graphene layer is coated uniformly on
The side of the transparent substrates.
6. photoemission ionization source according to claim 4 or 5, which is characterized in that further include heating device, the heating
Device is arranged in the other side of the transparent substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610496882.4A CN106024573B (en) | 2016-06-29 | 2016-06-29 | A kind of photoemission ionization source |
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| CN201610496882.4A CN106024573B (en) | 2016-06-29 | 2016-06-29 | A kind of photoemission ionization source |
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| CN106024573B true CN106024573B (en) | 2018-10-26 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107256818B (en) * | 2017-06-09 | 2018-11-02 | 哈尔滨工业大学 | A kind of back-illuminated type photocathode for low-power electric propulsion device |
| CN108109892B (en) * | 2017-12-13 | 2024-03-29 | 常州第六元素半导体有限公司 | Ion source based on photoelectric effect of graphene electrode |
| CN110381660A (en) * | 2019-07-02 | 2019-10-25 | 苏州微木智能系统有限公司 | A kind of plasma generator |
| CN113451104B (en) * | 2021-06-29 | 2023-12-15 | 苏州大学 | Sample injection ionization source, forming method and working method thereof, and detection device |
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| US6429426B1 (en) * | 1999-07-17 | 2002-08-06 | Bruker Saxonia Analytik Gmbh | Ionization chamber with electron source |
| CN102136521A (en) * | 2011-02-20 | 2011-07-27 | 汪小知 | Photo-field transmission demodulator based on one-dimensional nano material |
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| US7576320B2 (en) * | 2002-02-15 | 2009-08-18 | Implant Sciences Corporation | Photoelectric ion source photocathode regeneration system |
| CN104465264B (en) * | 2014-11-03 | 2017-03-08 | 华中科技大学 | A kind of Graphene photocathode and preparation method thereof |
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| US6429426B1 (en) * | 1999-07-17 | 2002-08-06 | Bruker Saxonia Analytik Gmbh | Ionization chamber with electron source |
| CN102364659A (en) * | 2005-12-02 | 2012-02-29 | 阿利斯公司 | Ion sources, systems and methods |
| CN102136521A (en) * | 2011-02-20 | 2011-07-27 | 汪小知 | Photo-field transmission demodulator based on one-dimensional nano material |
| CN103311089A (en) * | 2013-04-12 | 2013-09-18 | 李鹏 | Photoelectric-effect ion source based on carbon nano-tubes |
| CN103413749A (en) * | 2013-08-21 | 2013-11-27 | 北京声迅电子股份有限公司 | Non-radioactivity ionization source and application thereof |
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