CN106020330A - Low-power-consumption voltage source circuit - Google Patents
Low-power-consumption voltage source circuit Download PDFInfo
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- CN106020330A CN106020330A CN201610584914.6A CN201610584914A CN106020330A CN 106020330 A CN106020330 A CN 106020330A CN 201610584914 A CN201610584914 A CN 201610584914A CN 106020330 A CN106020330 A CN 106020330A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/267—Current mirrors using both bipolar and field-effect technology
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Abstract
The invention discloses a low-power-consumption voltage source circuit. The voltage source circuit comprises a first branch and a second branch, wherein a bias voltage generated by the first branch is output to the second branch; the first branch comprises i field-effect tubes which are connected in series by diodes; the second branch comprises a first field-effect tube, a second field-effect tube, a third field-effect tube, a fourth field-effect tube and a fifth field-effect tube, the second field-effect tube and the third field-effect tube are connected in series, and the fourth field-effect tube and the fifth field-effect tube are connected in series; the grid electrode of the first field-effect tube is connected with the drain electrode of the j-th field-effect tube, the source electrode of the first field-effect tube is connected with the second field-effect tube, the drain electrode of the first field-effect tube is connected with the fifth field-effect tube, and reference voltage is output from the joint of the second field-effect tube and the third field-effect tube; and i is a positive integer more than 1, j belongs to the range of 2 to (i-1), and j is a positive integer. In the low-power-consumption voltage source circuit, each field-effect tube works in a sub-threshold region, has a low static current, and can generate reference voltage which is not related to temperature so as to reduce power consumption.
Description
Technical field
The present invention relates to integrated circuit fields, relate more specifically to a kind of low power consumption voltage source circuit.
Background technology
Conventional voltage source circuit typically uses band-gap reference to realize, and is illustrated in figure 1 the voltage of prior art
The structure chart of source circuit.Field effect M4, M5, M6, M7, audion Q1, audion group Q2 and electricity
Generation is had the electric current I1 (increase of temperature elevated currents) of positive temperature coefficient, wherein, audion group by resistance R1
Q2 is formed in parallel by n audion；The n that number is audion Q1 due to the audion of audion group Q2
Times, then can draw I1=(VT n)/R1；Wherein, VT is thermal voltage value, with temperature line relationship.
Field effect transistor M8, audion Q3 and resistance R2 form output stage.And electric current I1 is through field effect transistor M5 mirror
As forming electric current I2 to field effect transistor M8 so that I1=I2, electric current I2 flow through resistance R2 and form positive temperature system
Number voltage VR2=(VT n) × (R2/R1), this voltage and negative temperature coefficient voltage VBE3Addition can produce with
Reference voltage V REF that temperature is unrelated, VREF=VBE3+(VT㏑n)×(R2/R1)；Wherein, VBE3It is three
The base emitter voltage of pole pipe Q3.
As above-mentioned, band gap reference voltage source circuit main purpose is to generate temperature independent reference voltage, this
Need each field effect transistor in circuit to be all operated in saturation region, and each audion is all operated in linear zone.Thus lead
Cause to need to consume bigger quiescent current to maintain these devices to be in correct duty.To reduce electricity
Stream, can realize by increasing resistance, then can area increased to a certain extent, in order to take into account the work of device
Making state, the amplitude of current reduction is also limited.And according to the technique realized and the difference of circuitry specifications,
The general quiescent current of band-gap reference circuit is 3 μ A to 20 μ A.This is for some low-power consumption are applied, μ A
The power consumption of level is the most excessive.
Therefore, it is necessary to provide a kind of low power consumption voltage source circuit to overcome drawbacks described above.
Summary of the invention
It is an object of the invention to provide a kind of low power consumption voltage source circuit, the low power consumption voltage source circuit of the present invention
Each field effect transistor be all operated in subthreshold region, quiescent current is the lowest, and can produce temperature independent benchmark
Voltage, reduces power consumption.
For achieving the above object, the invention provides a kind of low power consumption voltage source circuit, it includes the first branch road
With the second branch road, described first branch road produces a bias voltage input to described second branch road；Described first
It route i field effect transistor to be composed in series, and the connected mode of i described field effect transistor is what diode connected
Mode, external power source inputs the 1st described field effect transistor, field effect transistor ground connection described in i-th；Described second
Branch road includes the first field effect transistor, the second field effect transistor, the 3rd field effect transistor, the 4th field effect transistor and the 5th
Field effect transistor, and described second field effect transistor is connected in series with the 3rd field effect transistor, described 4th field effect transistor
Being connected in series with the 5th field effect transistor, external power source inputs described 4th field effect transistor, described 3rd field effect
Pipe ground connection；The grid of described first field effect transistor is connected with the drain electrode of field effect transistor described in jth, and described first
The source electrode of field effect transistor is connected with described second field effect transistor, the drain electrode of described first field effect transistor and described the
Five field effect transistor connect, and described second field effect transistor is electric with the junction point output reference of described 3rd field effect transistor
Pressure；I is the positive integer more than 1, j ∈ (2, i-1), and j is positive integer.
It is preferred that described second field effect transistor, the 3rd field effect transistor, the 4th field effect transistor and the 5th field effect
The connected mode of pipe is diode connected mode.
It is preferred that the connected mode of the field effect transistor of described diode connection is: the grid of described field effect transistor
Jointly it is connected with drain electrode.
It is preferred that described first field effect transistor, the second field effect transistor, the 3rd field effect transistor, the 4th field effect
I field effect transistor in pipe, the 5th field effect transistor and described first branch road is down than pipe.
It is preferred that described first field effect transistor and the 3rd field effect transistor are N-type field effect transistor, described second
Effect pipe is p-type field effect transistor；The source electrode of described first field effect transistor connects with the source electrode of described second field effect transistor
Connecing, the drain electrode of described second field effect transistor is connected with the drain electrode of described 3rd field effect transistor and output reference voltage.
It is preferred that when the reference voltage setting output is the biggest, and the value of j is the least；When the benchmark electricity setting output
Pressing the least, the value of j is the biggest.
It is preferred that i field effect transistor of described first branch road is the field effect transistor of same model；And, the 1st
The source electrode of individual described field effect transistor is connected with external power source, the grounded drain of field effect transistor described in i-th, or,
The drain electrode of the 1st described field effect transistor is connected with external power source, the source ground of field effect transistor described in i-th.
It is preferred that described 4th field effect transistor and the 5th field effect transistor are the field effect transistor of same model；And,
The source electrode of described 4th field effect transistor is connected with external power source, the drain electrode of described 5th field effect transistor and described the
The drain electrode of one field effect transistor connects, or, the drain electrode of described 4th field effect transistor is connected with external power source, described
The source electrode of the 5th field effect transistor is connected with the drain electrode of described first field effect transistor.
Compared with prior art, the low power consumption voltage source circuit of the present invention can be by regulating in described second branch road
The breadth length ratio of the first field effect transistor, the second field effect transistor and the 3rd field effect transistor can make described first branch road
Each field effect transistor be all operated in subthreshold region, same, can by regulate described first branch road each
Number and the breadth length ratio of effect pipe and make each field effect transistor of described second branch road all be operated in subthreshold region, no
Reduced by only the power consumption of whole circuit, and make the reference voltage exported temperature independent.
By description below and combine accompanying drawing, the present invention will become more fully apparent, and these accompanying drawings are used for explaining
Embodiments of the invention.
Accompanying drawing explanation
Fig. 1 is the structure chart of the voltage source circuit of prior art.
Fig. 2 is the structure chart of one embodiment of low power consumption voltage source circuit of the present invention.
Fig. 3 is the simulation waveform figure of one embodiment of the invention.
Detailed description of the invention
With reference now to accompanying drawing, describing embodiments of the invention, element numbers similar in accompanying drawing represents similar unit
Part.As it has been described above, the invention provides a kind of low power consumption voltage source circuit, the low power consumption voltage source of the present invention
Each field effect transistor of circuit is all operated in subthreshold region, and quiescent current is the lowest, and can produce temperature independent
Reference voltage, reduces power consumption.
Refer to Fig. 2, describe the embodiment of low power consumption voltage source circuit of the present invention.Fig. 2 is low-power consumption of the present invention
The structure chart of one embodiment of voltage source circuit, as it can be seen, the low power consumption voltage source circuit of the present invention includes
First branch road and the second branch road, described first branch road produces a bias voltage VBIASInput is to described second branch road；
I field effect transistor (MS1, MS2 ... MSi) of described first route is composed in series, the most adjacent two field effects
The source electrode of pipe is connected with drain electrode, and the connected mode of i described field effect transistor (MS1, MS2 ... MSi)
Being the mode that diode connects, external power source VDD inputs the 1st described field effect transistor MS1, i-th
Described field effect transistor MSi ground connection；Described second branch road includes the first field effect transistor M1, the second field effect transistor
M2, the 3rd field effect transistor M3, the 4th field effect transistor M4 and the 5th field effect transistor M5, and described second
Effect pipe M2 and the 3rd field effect transistor M3 are connected in series, described 4th field effect transistor M4 and the 5th field effect
Pipe M5 is connected in series, and external power source VDD inputs described 4th field effect transistor M4, described 3rd field effect
Pipe M3 ground connection；The grid of described first field effect transistor M1 connects with the drain electrode of field effect transistor MSj described in jth
Connecing, the source electrode of described first field effect transistor M1 is connected with described second field effect transistor M2, described first effect
Should the drain electrode of pipe M1 be connected with described 5th field effect transistor M5, described second field effect M2 pipe and described the
The junction point output reference voltage VREF of three field effect transistor M3；Wherein i is the positive integer more than 1, j ∈ (2,
I-1), and j is positive integer, and the value of i can be specifically chosen to the requirement of power consumption according to whole circuit, when
When circuit needs power consumption the lowest, the value of i is the biggest, and vice versa.It addition, one as the present invention excellent
Select embodiment, described second field effect transistor M2, the 3rd field effect transistor M3, the 4th field effect transistor M4 and
The M5 connected mode of the 5th field effect transistor is diode connected mode；Specifically, described diode connects
The connected mode of field effect transistor is: the grid of described field effect transistor is connected with drain electrode, specifically as in figure 2 it is shown,
The grid of the external power source VDD described field effect transistor of input still drains with source electrode and is connected, then according to field effect transistor be
Depending on p-type or N-type.As it has been described above, can by regulate the first field effect transistor M1 in described second branch road,
The breadth length ratio of the second field effect transistor M2 and the 3rd field effect transistor M3 can make each effect of described first branch road
Guan Jun is answered to be operated in subthreshold region, same, can be by regulating the individual of each field effect transistor of described first branch road
Number and breadth length ratio and make each field effect transistor of described second branch road all be operated in subthreshold region, not only reduce whole
The power consumption of individual circuit, and make reference voltage V REF exported temperature independent.
Specifically, as the preferred embodiment of the present invention, described first field effect transistor M1 and the 3rd field effect
Pipe M3 is N-type field effect transistor, and described second field effect transistor M2 is p-type field effect transistor；Described first effect
Should be connected with the source electrode of described second field effect transistor M2 by the source electrode of pipe M1, described second field effect transistor M2
Drain electrode is connected with the drain electrode of described 3rd field effect transistor M3 and output reference voltage VREF；Wherein, described base
The big I of quasi-voltage VREF is controlled by the value of regulation j, specifically, when the benchmark electricity setting output
Pressure VREF value is the biggest, and the value of j is the least；When reference voltage V REF setting output is the least, the value of j
The biggest, thus in actual applications, can select flexibly according to the size of reference voltage V REF of actual set
Select the value of j.It addition, each the described field effect transistor in the low power consumption voltage source circuit of the present invention is and compares
Pipe, it is, i field effect transistor (MS1, MS2 ... MSi), described first field effect transistor M1, the
Two field effect transistor M2, the 3rd field effect transistor M3, the 4th field effect transistor M4 and the 5th field effect transistor M5 are equal
For falling ratio pipe, that is to say that the ratio of the breadth length ratio of each field effect transistor is the least.
In the present embodiment, i the field effect transistor (MS1, MS2 ... MSi) of described first branch road is
The field effect transistor of same model；And, the source electrode of the 1st described field effect transistor MS1 and external power source VDD
The grounded drain of field effect transistor MSi described in connection, i-th, or, the 1st described field effect transistor MS1
Drain electrode is connected with external power source VDD, the source ground of field effect transistor MSi described in i-th.Specifically, when
When i the field effect transistor (MS1, MS2 ... MSi) of described first branch road is p-type pipe, then the 1st
The source electrode of described field effect transistor MS1 is connected with external power source VDD, field effect transistor MSi described in i-th
Grounded drain (as shown in Figure 2)；And when described first branch road i field effect transistor (MS1, MS2 ...
When MSi) being N-type pipe, then the drain electrode of the 1st described field effect transistor MS1 is with external power source VDD even
Connect, the source ground (not shown) of field effect transistor MSi described in i-th.Described 4th field effect transistor M4 with
5th field effect transistor M5 is the field effect transistor of same model；And, the source electrode of described 4th field effect transistor M4
Be connected with external power source VDD, the drain electrode of described 5th field effect transistor M5 and described first field effect transistor M1
Drain electrode connect；Or, the drain electrode of described 4th field effect transistor M4 is connected with external power source VDD, the described 5th
The source electrode of field effect transistor M5 is connected with the drain electrode of described first field effect transistor M1；Specifically, when described 4th
When effect pipe M4 and the 5th field effect transistor M5 are p-type pipe, then, the source of described 4th field effect transistor M4
Pole is connected with external power source VDD, the drain electrode of described 5th field effect transistor M5 and described first field effect transistor
The drain electrode of M1 connects (not shown), and when described 4th field effect transistor M4 and the 5th field effect transistor M5 are
During N-type pipe, then, the drain electrode of described 4th field effect transistor M4 be connected with external power source VDD, the described 5th
The source electrode of field effect transistor M5 is connected, as shown in Figure 2 with the drain electrode of described first field effect transistor M1.
As it has been described above, each field effect in the first branch road of the low power consumption voltage source circuit of the present invention and the second branch road
Ratio pipe should be down by pipe, thus by regulating the number of the field effect transistor of the first branch road series connection and field effect transistor
Breadth length ratio, it can be ensured that all field effect transistor in the second branch road are all operated in subthreshold region；Correspondingly, regulation
The breadth length ratio of each field effect transistor and voltage V in second branch roadBIASSize each field of the first branch road can be made to imitate
Answering Guan Jun to be operated in subthreshold region, therefore, the quiescent current of whole circuit is the lowest, and can produce temperature independent
Reference voltage V REF, reduce power consumption.
Please in conjunction with reference to Fig. 2, the operation principle of low power consumption voltage source circuit of the present invention is described.
As in figure 2 it is shown, set the source electrode of the first field effect transistor M1 and the node of the source electrode of the second field effect transistor M2
Current potential is Vx, flows through the first field effect transistor M1, the second field effect transistor M2, the electricity of the 3rd field effect transistor M3
Stream is Ix.If the first field effect transistor M1, the second field effect transistor M2, the breadth length ratio of the 3rd field effect transistor M3
It is respectivelyThreshold voltage is respectively VTH1、VTH2、VTH3.Make Ki'=μiCOXi(μi
For the mobility of field effect transistor MSi described in i-th, COXiOxidation for field effect transistor MSi described in i-th
Layer thickness).Can obtain according to subthreshold region field effect transistor current formula:
Wherein n1、n2、n3It is respectively the first field effect transistor M1, the second field effect transistor M2, the 3rd field effect
The sub-threshold slope modifying factor of pipe M3.VTFor thermal voltage, it it is a constant.
By above-mentioned formula, V can be eliminatedX, obtain VREFExpression formula be:
In above formula, n1、n2、n3For constant, the parameter relevant to temperature includes VTH1、VTH2、VTH3、VT,
The temperature coefficient of these parameters is all linear.
From the molecule of above formula it can be seen that by adjust the first field effect transistor M1, the second field effect transistor M2,
The breadth length ratio of the 3rd field effect transistor M3, it is possible to achieve VREF temperature coefficient is zero.As in figure 2 it is shown, it is electric
Pressure VBIAS is the current potential of some node of field effect transistor that i diode connects, and as shown is jth
The drain voltage of described field effect transistor MSj, its temperature coefficient close to zero, such that it is able to output with temperature without
Reference voltage V REF closed.
Simulation waveform figure as shown in Figure 3 is real shown in the Fig. 2 using the CMOS technology of 0.18 μm to realize
Execute example direct current simulation result.Wherein, outer power voltage VDD=3V.In the range of-40 DEG C～125 DEG C,
The change of reference voltage V REF is only 2.42ppm.
Above in association with most preferred embodiment, invention has been described, but the invention is not limited in disclosed above
Embodiment, and amendment, the equivalent combinations that the various essence according to the present invention is carried out should be contained.
Claims (8)
1. a low power consumption voltage source circuit, it is characterised in that include the first branch road and the second branch road, described
First branch road produces a bias voltage input to described second branch road；I field effect transistor string of described first route
Joint group becomes, and the connected mode of i described field effect transistor is the mode that diode connects, and external power source inputs
1st described field effect transistor, field effect transistor ground connection described in i-th；Described second branch road includes the first field effect
Pipe, the second field effect transistor, the 3rd field effect transistor, the 4th field effect transistor and the 5th field effect transistor, and described
Two field effect transistor are connected in series with the 3rd field effect transistor, and described 4th field effect transistor is connected with the 5th field effect transistor
Connecting, external power source inputs described 4th field effect transistor, described 3rd field effect transistor ground connection；Described first
The grid of effect pipe is connected with the drain electrode of field effect transistor described in jth, the source electrode of described first field effect transistor and institute
Stating the second field effect transistor to connect, the drain electrode of described first field effect transistor is connected with described 5th field effect transistor, institute
State the junction point output reference voltage of the second field effect transistor and described 3rd field effect transistor；I is the most whole more than 1
Number, j ∈ (2, i-1), and j are positive integer.
2. low power consumption voltage source circuit as claimed in claim 1, it is characterised in that described second field effect
The connected mode of pipe, the 3rd field effect transistor, the 4th field effect transistor and the 5th field effect transistor is diode and connects
Mode.
3. low power consumption voltage source circuit as claimed in claim 2, it is characterised in that described diode connects
The connected mode of field effect transistor be: the grid of described field effect transistor is connected jointly with drain electrode.
4. low power consumption voltage source circuit as claimed in claim 3, it is characterised in that described first field effect
Pipe, the second field effect transistor, the 3rd field effect transistor, the 4th field effect transistor, the 5th field effect transistor and described first
I field effect transistor in branch road is down than pipe.
5. low power consumption voltage source circuit as claimed in claim 3, it is characterised in that described first field effect
Guan Yu tri-field effect transistor is N-type field effect transistor, and described second field effect transistor is p-type field effect transistor；Described
The source electrode of one field effect transistor is connected with the source electrode of described second field effect transistor, the drain electrode of described second field effect transistor
Drain electrode with described 3rd field effect transistor is connected and output reference voltage.
6. low power consumption voltage source circuit as claimed in claim 3, it is characterised in that when the base setting output
Quasi-voltage is the biggest, and the value of j is the least；When the reference voltage setting output is the least, and the value of j is the biggest.
7. low power consumption voltage source circuit as claimed in claim 3, it is characterised in that described first branch road
I field effect transistor is the field effect transistor of same model；And, the source electrode of the 1st described field effect transistor is with outside
Power supply connects, the grounded drain of field effect transistor described in i-th, or, the drain electrode of the 1st described field effect transistor with
The source ground of field effect transistor described in external power source connection, i-th.
8. low power consumption voltage source circuit as claimed in claim 3, it is characterised in that described 4th field effect
Guan Yu five field effect transistor is the field effect transistor of same model；And, the source electrode of described 4th field effect transistor with
External power source connects, the drain electrode of described 5th field effect transistor is connected with the drain electrode of described first field effect transistor, or,
The drain electrode of described 4th field effect transistor is connected with external power source, the source electrode of described 5th field effect transistor and described the
The drain electrode of one field effect transistor connects.
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| CN201610584914.6A CN106020330A (en) | 2016-07-22 | 2016-07-22 | Low-power-consumption voltage source circuit |
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| CN201610584914.6A CN106020330A (en) | 2016-07-22 | 2016-07-22 | Low-power-consumption voltage source circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109491429A (en) * | 2017-09-12 | 2019-03-19 | 三星电子株式会社 | Band gap reference voltage generation circuit and band gap reference voltage generation system |
| CN109857183A (en) * | 2019-03-26 | 2019-06-07 | 成都锐成芯微科技股份有限公司 | A kind of reference current source with temperature-compensating |
| CN115112941A (en) * | 2022-08-24 | 2022-09-27 | 芯昇科技有限公司 | Voltage detection circuit |
| CN115421551A (en) * | 2022-08-30 | 2022-12-02 | 成都微光集电科技有限公司 | Band gap reference circuit and chip |
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| CN109491429A (en) * | 2017-09-12 | 2019-03-19 | 三星电子株式会社 | Band gap reference voltage generation circuit and band gap reference voltage generation system |
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| CN115421551A (en) * | 2022-08-30 | 2022-12-02 | 成都微光集电科技有限公司 | Band gap reference circuit and chip |
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Application publication date: 20161012 |