CN106020038A - Sewage treatment double protection intelligent dosing system - Google Patents
Sewage treatment double protection intelligent dosing system Download PDFInfo
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- CN106020038A CN106020038A CN201610495074.6A CN201610495074A CN106020038A CN 106020038 A CN106020038 A CN 106020038A CN 201610495074 A CN201610495074 A CN 201610495074A CN 106020038 A CN106020038 A CN 106020038A
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/04—Programme control other than numerical control, i.e. in sequence controllers or logic controllers
- G05B19/042—Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
- G05B19/0423—Input/output
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/20—Pc systems
- G05B2219/24—Pc safety
- G05B2219/24215—Scada supervisory control and data acquisition
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Hydrology & Water Resources (AREA)
- Environmental & Geological Engineering (AREA)
- Water Supply & Treatment (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
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Abstract
The invention discloses a sewage treatment double protection intelligent dosing system comprising a control chip U1, a capacitor C4 of which the positive electrode is connected with the THRES pin of the control chip U1 and the negative electrode is connected with the GND pin of the control chip U1, a capacitor C5 of which the positive electrode is connected with the CONT pin of the control chip U1 and the negative electrode is connected with the GND pin of the control chip U1, a driving circuit which is connected with the control chip U1, a signal input circuit which is connected with the control chip U1, a power supply input circuit which is connected with the signal input circuit, and a driving protection circuit which is connected with the driving circuit, wherein the model number of the control chip U1 is NE555. According to the sewage treatment double protection intelligent dosing system, the use effect and the intelligent performance of the product can be enhanced without frequent manual operation so that manpower losses can be reduced and the sewage treatment effect of enterprises can be further enhanced.
Description
Technical field
The invention belongs to sewage treatment area, specifically refer to a kind of sewage disposal double protection intelligent dosing system.
Background technology
Along with society growing, going from bad to worse of environment, environmental conservation has been arrived instantly
Walk.In order to reduce the impact on environment, enterprise of today all can be arranged at the treatment tank matched
The sewage produced in reason production process.During sewage disposal, need often to add in treatment tank
Adding medicine improves effect and the efficiency of sewage disposal.And in order to reduce the difficulty that medicament adds, great majority enterprise
Industry selects to use chemicals dosing plant to realize, and its mode realized is: adds needs in advance in chemicals dosing plant and makes
Medicament, then by the Teat pipette timing working in chemicals dosing plant, medicament is pumped in treatment tank.But
The dosing pattern of existing chemicals dosing plant is relatively simple, and it is intelligent poor, needs in advance when actually used
Set additive amount of medicament with add interval time, during its work by strict accordance with default additive amount of medicament with add
Add work interval time, it is impossible to according to concrete sewage situation from the addition of Row sum-equal matrix medicament and interpolation
Time, when needs adjust additive amount of medicament with the time of interpolation, operator need the most voluntarily to equipment
It is adjusted, even needs operator every day equipment to be adjusted 5-7 time time frequent, significantly waste manpower money
Source.
Summary of the invention
It is an object of the invention to overcome the problems referred to above, it is provided that a kind of sewage disposal double protection intelligent dosing system,
The using effect of product can be improved with intelligent, it is not necessary to carry out artificial frequent operation, reduce manpower money
The loss in source, further increases the wastewater treatment efficiency of enterprise.
The purpose of the present invention is achieved through the following technical solutions:
Sewage disposal double protection intelligent dosing system, including control chip U1, positive pole is with control chip U1's
The electric capacity C4 that THRES pin is connected, negative pole is connected with the GND pin of control chip U1, positive pole
Be connected with the CONT pin of control chip U1, negative pole is connected with the GND pin of control chip U1
Electric capacity C5, the drive circuit being connected with control chip U1, defeated with the signal that control chip U1 is connected
Enter circuit, the power supply input circuit being connected with signal input circuit, and driving of being connected with drive circuit
Dynamic protection circuit；Wherein, the model of control chip U1 is NE555.
As preferably, described power supply input circuit is by audion VT1, audion VT2, one end and audion
The electricity that the colelctor electrode of VT1 is connected, other end colelctor electrode with audion VT2 after resistance R2 is connected
Resistance R1, P pole colelctor electrode with audion VT2 after resistance R3 is connected, N pole is sequentially through resistance R4
The diode D1 being connected with emitter stage with audion VT2 after resistance R5, is arranged in parallel with resistance R3
Electric capacity C1, N pole be connected with the junction point of resistance R4 and resistance R5, P pole after resistance R6 with three
The Zener diode D2 that the base stage of pole pipe VT1 is connected, and the electricity being arranged in parallel with Zener diode D2
Hold C2 composition；Wherein, the emitter stage of audion VT1 is connected with the base stage of audion VT2, voltage stabilizing two
The P pole of pole pipe D2 is connected with the negative pole of electric capacity C4, resistance R1 and the junction point of resistance R2 and audion
The base stage of VT1 forms the power input of this power supply input circuit.
As preferably, described signal input circuit is connected by the positive pole of negative pole with electric capacity C4, positive pole is through sliding
The electric capacity C3 that after rheostat RP2, negative pole with electric capacity C4 is connected, one end is connected with the positive pole of electric capacity C3
Connect, resistance R8, Yi Jiyi that the other end is connected with the TRIG pin of control chip U1 after resistance R7
End is connected with VCC pin and the RESET pin of control chip U1 simultaneously, the other end is through slide rheostat
The resistance R9 composition that after RP1, junction point with resistance R7 and resistance R8 is connected；Wherein, electric capacity C3
Negative pole is connected with TRIG pin and the THRES pin of control chip U1 simultaneously, resistance R9 and change of sliding
The junction point of resistance device RP1 is connected with the N pole of diode D1, the sliding end conduct of slide rheostat RP1
The signal input part Vin of this signal input circuit.
As preferably, described drive circuit is by bidirectional thyristor VS1, Teat pipette M, one end and control chip U1
OUT pin be connected, the other end and bidirectional thyristor VS1 control the resistance R10 that pole is connected, with
And positive pole and bidirectional thyristor VS1 control pole be connected, second electrode of negative pole and single file IGCT VS1
The electric capacity C6 composition being connected；Wherein, the negative pole of electric capacity C6 is connected with the negative pole of electric capacity C5, Teat pipette
One end of M is connected with first electrode of bidirectional thyristor VS1, the other end and resistance R1 and resistance R2
Junction point is connected.
Further, described Drive Protecting Circuit is by audion VT3, audion VT4, negative pole and audion
The electric capacity C7 that the emitter stage of VT4 is connected, positive pole is connected with the colelctor electrode of audion VT3, with electric capacity
The resistance R12 that C7 is arranged in parallel, one end is connected with the negative pole of electric capacity C7, the other end and audion VT3
The resistance R13 that is connected of base stage, positive pole is connected with the base stage of audion VT3, negative pole is through resistance R14
The electric capacity C8 that emitter stage with audion VT3 is connected afterwards, positive pole is connected with the base stage of audion VT4,
The electric capacity C9 that negative pole positive pole with electric capacity C7 after resistance R11 is connected, the base of one end and audion VT3
Pole is connected, the other end is connected with the negative pole of electric capacity C8, sliding end is connected with the positive pole of electric capacity C9
Slide rheostat RP3, and one end negative pole with electric capacity C8 after resistance R15 is connected, the other end and electricity
Hold the slide rheostat RP4 that negative pole is connected, sliding end is connected of C9 with the colelctor electrode of audion VT4
Composition；Wherein, the colelctor electrode of audion VT3 as the input of this Drive Protecting Circuit, electric capacity C8's
Negative pole is as the outfan of this Drive Protecting Circuit, the colelctor electrode of audion VT3 and resistance R1 and resistance R2
Junction point be connected, the negative pole of electric capacity C8 is connected with the negative pole of electric capacity C6.
Further, described chip protection circuit is by metal-oxide-semiconductor Q1, and audion VT5, positive pole is through resistance
The electric capacity that after R22, the base stage with audion VT5 is connected, negative pole is connected with the emitter stage of audion VT5
C11, one end is connected with the positive pole of electric capacity C11, other end negative pole with C11 after resistance R23 is connected
The slide rheostat RP5 connect, one end is connected with the positive pole of electric capacity C11, the other end is sequentially through resistance R17
With the resistance R16 of ground connection after resistance R18, one end is connected with the junction point of resistance R16 and resistance R17,
The resistance R19 that the other end is connected with the drain electrode of metal-oxide-semiconductor Q1, positive pole is connected with the drain electrode of metal-oxide-semiconductor Q1
Connect, electric capacity C10 that negative pole junction point with resistance R17 and resistance R18 after resistance R20 is connected, one
The resistance R21 that end is connected with the negative pole of electric capacity C10, the other end is connected with the colelctor electrode of audion VT5,
The diode D3 that P pole is connected with the negative pole of electric capacity C10, N pole is connected with the grid of metal-oxide-semiconductor Q1,
The resistance that one end is connected with the N pole of diode D3, the other end is connected with the emitter stage of audion VT5
R24, and one end is connected with the source electrode of metal-oxide-semiconductor Q1, the colelctor electrode phase of the other end and audion VT5
The resistance R25 composition connected；Wherein, the grounded emitter of audion VT5, resistance R16 and resistance R17
Junction point as the input of this chip protection circuit, the source electrode of metal-oxide-semiconductor Q1 is as this chip protection electricity
The junction point of the outfan on road, resistance R16 and resistance R17 is connected with the VCC pin of control chip U1,
The source electrode of metal-oxide-semiconductor Q1 is connected with the GND pin of control chip U1.
The present invention compared with prior art, has the following advantages and beneficial effect:
The present invention can improving product intelligent so that product can adjust according to concrete Monitoring Data and add
The working strength of medicine device, thus well overcome prior art and cannot add dose according to real needs
Defect so that staff, without adjusting chemicals dosing plant frequently, substantially increases the using effect of product,
According to the storage volume of medicinal liquid, staff 7-15 talent need to go to add a medicament, is greatly saved enterprise
Human cost；Drive Protecting Circuit is set so that drive circuit run more steady, it is to avoid power supply
The impact that drive system is caused by fluctuation occurs, improves the using effect of system, it is possible to extend system 2-3
The service life in year；The present invention is provided with chip protection circuit, it is possible to when power-supply fluctuation is bigger, protection controls
Chip, it is to avoid control chip is damaged by power supply, improves the service life of control chip, thus improving product
Using effect so that this control chip can extend use 3-5.
Accompanying drawing explanation
Fig. 1 is the circuit structure diagram of the intelligent dosing system of the present invention.
Fig. 2 is the circuit structure diagram of the Drive Protecting Circuit of the present invention.
Fig. 3 is the circuit structure diagram of the chip protection circuit of the present invention.
Detailed description of the invention
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention do not limit
In this.
Embodiment
As it is shown in figure 1, the present invention includes the THRES pin of control chip U1, positive pole and control chip U1
Be connected, electric capacity C4 that negative pole is connected with the GND pin of control chip U1, positive pole and control chip
The electric capacity C5 that the CONT pin of U1 is connected, negative pole is connected with the GND pin of control chip U1,
The drive circuit being connected with control chip U1, the signal input circuit being connected with control chip U1, with
The power supply input circuit that signal input circuit is connected, and the Drive Protecting Circuit being connected with drive circuit；
Wherein, the model of control chip U1 is NE555.
Power supply input circuit by audion VT1, audion VT2, resistance R1, resistance R2, resistance R3,
Resistance R4, resistance R5, resistance R6, electric capacity C1, electric capacity C2, diode D1, and Zener diode
D2 forms.
During connection, one end of resistance R1 is connected with the colelctor electrode of audion VT1, the other end is through resistance R2
Colelctor electrode with audion VT2 is connected afterwards, the P pole of diode D1 after resistance R3 with audion VT2
Colelctor electrode be connected, N pole is sequentially connected through resistance R4 emitter stage with audion VT2 after resistance R5
Connecing, electric capacity C1 is arranged in parallel with resistance R3, the N pole of Zener diode D2 and resistance R4 and resistance R5
Junction point be connected, P pole base stage with audion VT1 after resistance R6 is connected, electric capacity C2 is with steady
Pressure diode D2 is arranged in parallel.
Wherein, the emitter stage of audion VT1 is connected with the base stage of audion VT2, Zener diode D2
P pole be connected with the negative pole of electric capacity C4, the junction point of resistance R1 and resistance R2 and audion VT1's
Base stage forms the power input of this power supply input circuit.
Signal input circuit is by slide rheostat RP1, slide rheostat RP2, electric capacity C3, resistance R7, electricity
Resistance R8, and resistance R9 composition.
During connection, the negative pole of electric capacity C3 is connected with the positive pole of electric capacity C4, positive pole is through slide rheostat RP2
Negative pole with electric capacity C4 is connected afterwards, and one end of resistance R8 is connected with the positive pole of electric capacity C3, the other end
After resistance R7, the TRIG pin with control chip U1 is connected, one end of resistance R9 simultaneously with control core
The VCC pin of sheet U1 is connected with RESET pin, the other end after slide rheostat RP1 with resistance
R7 is connected with the junction point of resistance R8.
Wherein, the negative pole of electric capacity C3 is connected with TRIG pin and the THRES pin of control chip U1 simultaneously
Connecing, the junction point of resistance R9 and slide rheostat RP1 is connected with the N pole of diode D1, slip variable resistance
The sliding end of device RP1 is as the signal input part Vin of this signal input circuit.
Drive circuit is made up of bidirectional thyristor VS1, Teat pipette M, resistance R10, and electric capacity C6.
During connection, one end of resistance R10 is connected with the OUT pin of control chip U1, the other end is with double
It is connected to the control pole of IGCT VS1, the control pole phase of the positive pole of electric capacity C6 and bidirectional thyristor VS1
Connect, negative pole is connected with second electrode of single file IGCT VS1.
Wherein, the negative pole of electric capacity C6 is connected with the negative pole of electric capacity C5, one end of Teat pipette M and two-way brilliant lock
First electrode of pipe VS1 is connected, the other end is connected with the junction point of resistance R1 and resistance R2.
As in figure 2 it is shown, Drive Protecting Circuit is by audion VT3, audion VT4, slide rheostat RP3,
Slide rheostat RP4, electric capacity C7, electric capacity C8, electric capacity C9, resistance R11, resistance R12, resistance R13,
Resistance R14, and resistance R15 composition.
During connection, the negative pole of electric capacity C7 is connected with the emitter stage of audion VT4, positive pole and audion VT3
Colelctor electrode be connected, resistance R12 is arranged in parallel with electric capacity C7, one end of resistance R13 and electric capacity C7's
Negative pole is connected, the other end is connected with the base stage of audion VT3, the positive pole of electric capacity C8 and audion VT3
Base stage be connected, negative pole emitter stage with audion VT3 after resistance R14 is connected, electric capacity C9's
Positive pole is connected with the base stage of audion VT4, negative pole positive pole with electric capacity C7 after resistance R11 is connected,
One end of slide rheostat RP3 is connected with the base stage of audion VT3, the negative pole of the other end and electric capacity C8
Be connected, sliding end is connected with the positive pole of electric capacity C9, and one end of slide rheostat RP4 is through resistance R15
Negative pole with electric capacity C8 is connected afterwards, the other end is connected with the negative pole of electric capacity C9, sliding end and audion
The colelctor electrode of VT4 is connected.
Wherein, the colelctor electrode of audion VT3 is as the input of this Drive Protecting Circuit, and electric capacity C8's is negative
Pole is as the outfan of this Drive Protecting Circuit, and the colelctor electrode of audion VT3 is with resistance R1's and resistance R2
Junction point is connected, and the negative pole of electric capacity C8 is connected with the negative pole of electric capacity C6.
As it is shown on figure 3, chip protection circuit is by metal-oxide-semiconductor Q1, audion VT5, diode D3, slide
Rheostat RP5, electric capacity C10, electric capacity C11, resistance R16, resistance R17, resistance R18, resistance R19,
Resistance R20, resistance R21, resistance R22, resistance R23, resistance R24, and resistance R25 form.
During connection, the positive pole of electric capacity C11 base stage with audion VT5 after resistance R22 is connected, negative pole
Being connected with the emitter stage of audion VT5, one end of slide rheostat RP5 is connected with the positive pole of electric capacity C11
Connect, other end negative pole with C11 after resistance R23 is connected, one end of resistance R16 and electric capacity C11
Positive pole be connected, the other end sequentially ground connection after resistance R17 and resistance R18, one end of resistance R19 with
Resistance R16 is connected with the junction point of resistance R17, the other end is connected with the drain electrode of metal-oxide-semiconductor Q1, electricity
Hold C10 positive pole be connected with the drain electrode of metal-oxide-semiconductor Q1, negative pole after resistance R20 with resistance R17 and electricity
Resistance R18 junction point be connected, one end of resistance R21 is connected with the negative pole of electric capacity C10, the other end and
The colelctor electrode of audion VT5 is connected, and the P pole of diode D3 is connected with the negative pole of electric capacity C10, N
Pole is connected with the grid of metal-oxide-semiconductor Q1, one end of resistance R24 is connected with the N pole of diode D3,
The other end is connected with the emitter stage of audion VT5, the source electrode phase of one end of resistance R25 and metal-oxide-semiconductor Q1
Connect, the other end is connected with the colelctor electrode of audion VT5.
Wherein, the grounded emitter of audion VT5, the junction point of resistance R16 and resistance R17 is as this core
The input of sheet protection circuit, the source electrode of metal-oxide-semiconductor Q1 is as the outfan of this chip protection circuit, resistance
The junction point of R16 and resistance R17 is connected with the VCC pin of control chip U1, the source of metal-oxide-semiconductor Q1
Pole is connected with the GND pin of control chip U1.
During work, power supply is connected on the power input of native system, and by the signal of corresponding sensor
Outfan is connected on the signal input part of native system, at sensor measurement to corresponding need material to be processed
Concentration just can trigger control chip U1 when reaching preset value so that the OUT pin output of control chip U1
Electric current, so conducting bidirectional thyristor VS1 make in chemicals dosing plant Teat pipette M work and to treatment tank
In pump into corresponding treatment agent, needing the concentration of material to be processed less than control chip U1 control after preset value
Pharmacy pump M quits work, thus completes the process of whole dosing.In use, can be sliding by adjusting
The sliding end of dynamic rheostat RP1 changes the preset value of system, and control chip U1 will be according to signal input part
The signal intensity of upper input controls the working strength of Teat pipette M, thus has reached automatic adjustment product chemical feeding quantity
Purpose.
So, the present invention can improving product intelligent so that product can be according to concrete Monitoring Data
Adjust the working strength of chemicals dosing plant, thus well overcome prior art and cannot add according to real needs
The defect of dose so that staff, without adjusting chemicals dosing plant frequently, substantially increases the use of product
Effect, according to the storage volume of medicinal liquid, staff 7-15 talent need to go to add a medicament, is greatly saved
The human cost of enterprise；Drive Protecting Circuit is set so that drive circuit run more steady, it is to avoid
There is the impact that drive system is caused by fluctuation in power supply, improves the using effect of system, it is possible to extend system
The service life of system 2-3；The present invention is provided with chip protection circuit, it is possible to protect when power-supply fluctuation is bigger
Control chip, it is to avoid control chip is damaged by power supply, improves the service life of control chip, thus promotes product
The using effect of product so that this control chip can extend use 3-5.
As it has been described above, just can well realize the present invention.
Claims (7)
1. sewage disposal double protection intelligent dosing system, it is characterised in that: include control chip U1, positive pole
Be connected with the THRES pin of control chip U1, negative pole is connected with the GND pin of control chip U1
Electric capacity C4, positive pole is connected with the CONT pin of control chip U1, negative pole and control chip U1
The electric capacity C5 that GND pin is connected, the drive circuit being connected with control chip U1, with control chip
The signal input circuit that U1 is connected, the power supply input circuit being connected with signal input circuit, and with drive
The Drive Protecting Circuit that galvanic electricity road is connected；Wherein, the model of control chip U1 is NE555.
Sewage disposal the most according to claim 1 double protection intelligent dosing system, it is characterised in that: institute
State Drive Protecting Circuit to be connected with the emitter stage of audion VT4 by audion VT3, audion VT4, negative pole
Connect, electric capacity C7 that positive pole is connected with the colelctor electrode of audion VT3, the resistance being arranged in parallel with electric capacity C7
R12, the resistance that one end is connected with the negative pole of electric capacity C7, the other end is connected with the base stage of audion VT3
R13, positive pole is connected with the base stage of audion VT3, negative pole after resistance R14 with audion VT3 send out
The electric capacity C8 that emitter-base bandgap grading is connected, positive pole is connected with the base stage of audion VT4, negative pole after resistance R11 with
The electric capacity C9 that the positive pole of electric capacity C7 is connected, one end is connected with the base stage of audion VT3, the other end with
The slide rheostat RP3 that the negative pole of electric capacity C8 is connected, sliding end is connected with the positive pole of electric capacity C9, with
And one end negative pole with electric capacity C8 after resistance R15 is connected, the other end is connected with the negative pole of electric capacity C9,
The slide rheostat RP4 composition that sliding end is connected with the colelctor electrode of audion VT4；Wherein, audion
The colelctor electrode of VT3 is as the input of this Drive Protecting Circuit, and the negative pole of electric capacity C8 is as this driving protection electricity
The outfan on road.
Sewage disposal the most according to claim 2 double protection intelligent dosing system, it is characterised in that: institute
State chip protection circuit by metal-oxide-semiconductor Q1, audion VT5, positive pole after resistance R22 with audion VT5
The electric capacity C11 that base stage is connected, negative pole is connected with the emitter stage of audion VT5, one end and electric capacity C11
The slide rheostat RP5 that positive pole is connected, the other end is connected with the negative pole of C11 after resistance R23,
One end is connected with the positive pole of electric capacity C11, the other end sequentially electricity of ground connection after resistance R17 and resistance R18
Resistance R16, one end is connected with the junction point of resistance R16 and resistance R17, the other end and metal-oxide-semiconductor Q1
The resistance R19 that is connected of drain electrode, positive pole is connected with the drain electrode of metal-oxide-semiconductor Q1, negative pole is after resistance R20
The electric capacity C10 being connected with the junction point of resistance R17 and resistance R18, the negative pole phase of one end and electric capacity C10
Resistance R21, the P pole that connection, the other end are connected with the colelctor electrode of audion VT5 is negative with electric capacity C10's
The diode D3 that pole is connected, N pole is connected with the grid of metal-oxide-semiconductor Q1, one end is with diode D3's
The resistance R24 that N pole is connected, the other end is connected with the emitter stage of audion VT5, and one end and MOS
The resistance R25 composition that the source electrode of pipe Q1 is connected, the other end is connected with the colelctor electrode of audion VT5；
Wherein, the grounded emitter of audion VT5, the junction point of resistance R16 and resistance R17 is protected as this chip
The input of protection circuit, the source electrode of metal-oxide-semiconductor Q1 is as the outfan of this chip protection circuit.
Sewage disposal the most according to claim 3 double protection intelligent dosing system, it is characterised in that: institute
State power supply input circuit to be connected with the colelctor electrode of audion VT1 by audion VT1, audion VT2, one end
Connect, resistance R1, P pole that other end colelctor electrode with audion VT2 after resistance R2 is connected is through resistance
After R3 the colelctor electrode with audion VT2 be connected, N pole sequentially after resistance R4 and resistance R5 with three poles
The diode D1 that the emitter stage of pipe VT2 is connected, electric capacity C1, the N pole being arranged in parallel with resistance R3 and electricity
The junction point of resistance R4 and resistance R5 is connected, P pole base stage with audion VT1 after resistance R6 is connected
The Zener diode D2 connect, and the electric capacity C2 composition being arranged in parallel with Zener diode D2；Wherein, three
The emitter stage of pole pipe VT1 is connected with the base stage of audion VT2, the P pole of Zener diode D2 and electric capacity
The negative pole of C4 is connected, and the junction point of resistance R1 and resistance R2 forms this electricity with the base stage of audion VT1
The power input of source input circuit.
Sewage disposal the most according to claim 4 double protection intelligent dosing system, it is characterised in that: institute
State signal input circuit be connected by the positive pole of negative pole with electric capacity C4, positive pole after slide rheostat RP2 with electricity
Holding the electric capacity C3 that is connected of negative pole of C4, one end is connected with the positive pole of electric capacity C3, the other end is through resistance
The resistance R8 being connected with the TRIG pin of control chip U1 after R7, and one end is simultaneously and control chip
The VCC pin of U1 is connected with RESET pin, the other end after slide rheostat RP1 with resistance R7
The resistance R9 composition being connected with the junction point of resistance R8；Wherein, the negative pole of electric capacity C3 simultaneously with control
The TRIG pin of chip U1 is connected with THRES pin, resistance R9 and the company of slide rheostat RP1
Contact is connected with the N pole of diode D1, and the sliding end of slide rheostat RP1 is as this signal input electricity
The signal input part Vin on road.
Sewage disposal the most according to claim 5 double protection intelligent dosing system, it is characterised in that: institute
State drive circuit to be connected with the OUT pin of control chip U1 by bidirectional thyristor VS1, Teat pipette M, one end
Connect, the other end and bidirectional thyristor VS1 control the resistance R10 that pole is connected, and positive pole and two-way crystalline substance
Brake tube VS1 controls the electric capacity that pole is connected, negative pole is connected with second electrode of single file IGCT VS1
C6 forms；Wherein, the negative pole of electric capacity C6 is connected with the negative pole of electric capacity C5, and one end of Teat pipette M is with double
Be connected to first electrode of IGCT VS1, the other end is connected with the junction point of resistance R1 and resistance R2.
Sewage disposal the most according to claim 6 double protection intelligent dosing system, it is characterised in that: institute
The junction point of the colelctor electrode and resistance R1 and resistance R2 of stating audion VT3 is connected, the negative pole of electric capacity C8
It is connected with the negative pole of electric capacity C6, the junction point of resistance R16 and resistance R17 and the VCC of control chip U1
Pin is connected, and the source electrode of metal-oxide-semiconductor Q1 is connected with the GND pin of control chip U1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610495074.6A CN106020038A (en) | 2016-06-29 | 2016-06-29 | Sewage treatment double protection intelligent dosing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610495074.6A CN106020038A (en) | 2016-06-29 | 2016-06-29 | Sewage treatment double protection intelligent dosing system |
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| Publication Number | Publication Date |
|---|---|
| CN106020038A true CN106020038A (en) | 2016-10-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610495074.6A Pending CN106020038A (en) | 2016-06-29 | 2016-06-29 | Sewage treatment double protection intelligent dosing system |
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| CN (1) | CN106020038A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115124096A (en) * | 2022-06-29 | 2022-09-30 | 新疆兵团勘测设计院(集团)有限责任公司 | Shipborne river and lake ecological restoration sprinkling system |
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2016
- 2016-06-29 CN CN201610495074.6A patent/CN106020038A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115124096A (en) * | 2022-06-29 | 2022-09-30 | 新疆兵团勘测设计院(集团)有限责任公司 | Shipborne river and lake ecological restoration sprinkling system |
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Application publication date: 20161012 |