CN106017743A - Thermoelectric conversion sensor applied to micro calorimeter in 110GHz-170GHz frequency - Google Patents
Thermoelectric conversion sensor applied to micro calorimeter in 110GHz-170GHz frequency Download PDFInfo
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- CN106017743A CN106017743A CN201610340792.6A CN201610340792A CN106017743A CN 106017743 A CN106017743 A CN 106017743A CN 201610340792 A CN201610340792 A CN 201610340792A CN 106017743 A CN106017743 A CN 106017743A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K17/00—Measuring quantity of heat
- G01K17/006—Microcalorimeters, e.g. using silicon microstructures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R21/00—Arrangements for measuring electric power or power factor
- G01R21/02—Arrangements for measuring electric power or power factor by thermal methods, e.g. calorimetric
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Abstract
The invention discloses a thermoelectric conversion sensor applied to a micro calorimeter in the 110GHz-170GHz frequency. The sensor comprises a wedge-form wave absorber (1), a platinum thermistor (2), separator plates (3 and 4), an end cap (5), casings (6 and 7) and a waveguide flange (8), the platinum thermistor (2) is prepared in the separator plates (3 and 4) to form an intermediate, a gap of the wedge-form wave absorber (1) accommodates the intermediate, the wedge-form wave absorber (1) is mounted on the waveguide flange (8), the end cap (5) and the casings (6 and 7) are arranged outside the wedge-form wave absorber (1). The thermoelectric conversion sensor uses DC signals to represent Terahertz power magnetide. Load matching heat metering replaces traditional thermoelectric conversion, Terahertz 110GHz to 170GHz power is transmitted to a matched load via the waveguide flange (8), the broadband matching performance is high, the wave absorption performance is high, and the standing-wave ratio is low.
Description
Technical field
The present invention relates to microwave power reference measurement technical field, more particularly, refer to that one is applied to
The thermo-electric conversion sensor of 110GHz～170GHz frequency microcalorimeter.
Background technology
Application number 201110372129.1, November 21 2011 applying date, denomination of invention " microcalorimeter,
Use power base systems and the measuring method of this microcalorimeter ".The description of the document and accompanying drawing disclose trace
The structure of heat meter, at least includes thermoelectric pile, operating power seat and reference power seat.
Nearly two during the last ten years, and Terahertz (i.e. 100GHz to 10THz) the science and technology whole world is flourish, achieves
Important achievement in research, application extension to wave spectrum, imaging, communication, radar, astronomy, meteorology, national defence, aviation boat
It etc. field.Meanwhile, domestic and international Terahertz test device, instrument, instrumentation emerge in multitude, and such as signal occurs
Device, energy meter, signal analyzer, Network Analyzer, noise factor meter and cymometer etc., for Terahertz Technology
Development and application provide strong support.Terahertz is measured the accurate reliability of equipment performance index and is directly affected
The research level of Terahertz Technology, product quality.As the measurement instrument of the unified whole nation the highest foundation of value, terahertz
Hereby mete-wand provides for Terahertz measurement equipment and evaluates accurately and reliably, demarcates and calibration operation.Power parameter is nothing
One of key parameter amount most basic, most important in line electricity measuring system.
Below 110GHz microwave frequency band utilizes commercial thermistor mount power sensor mostly both at home and abroad, uses trace
The mode of heat meter, is quantitatively converted into heat by microwave energy, and utilizes direct current substitute technology to determine and the tracing to the source of direct current value
Relation, thus set up power reference.Higher than 110GHz frequency range, owing to material, manufacturing process etc. limit, mesh
Front thermoelectric conversion type power sensor technology is the most blank in the world, thus limits the foundation of power reference.
Summary of the invention
The present invention devises a kind of thermo-electric conversion sensing being applied to 110GHz～170GHz frequency microcalorimeter
Device, shows Terahertz power magnitude employing direct current signal.When Terahertz 110GHz～170GHz power
By in waveguide to matched load, after matched load absorbs Terahertz power, heat can be produced, by waveguide
Portion's conduction of heat, the sensor temperature causing the present invention to design rises, and then makes the platinum resistance thermistor resistance of sensor internal
Change, the change of the heat DC signal produced by Terahertz power shows.The present invention utilizes " mates negative
Carrying " calorimetric substitutes traditional thermo-electric conversion, and Broadband Matching is good, and absorbing property is good, and its standing-wave ratio is little.
The present invention devises a kind of thermo-electric conversion sensing being applied to 110GHz～170GHz frequency microcalorimeter
Device, this thermo-electric conversion sensor includes wedge shape wave-absorber (1), platinum resistance thermistor (2), A dividing plate (3), B
Dividing plate (4), end cap (5), A housing (6), B housing (7) and waveguide flange (8)；
Wherein, A dividing plate (3) is identical with the structure of B dividing plate (4)；
Wherein, A housing (6) is identical with the structure of B housing (7)；
Wherein, wedge shape wave-absorber (1), end cap (5), A housing (6), B housing (7) and waveguide flange (8)
Constitute matched load；
Wherein, platinum resistance thermistor (2), A dividing plate (3) constitute intermediate with B dividing plate (4)；Intermediate is installed
In the gap of wedge shape wave-absorber (1), wedge shape wave-absorber (1) is arranged on waveguide flange (8), and end cap (5),
A housing (6) and B housing (7) are arranged on the outside of wedge shape wave-absorber (1)；
Wedge shape wave-absorber (1) is formed in one structural member；Wedge shape wave-absorber (1) is provided with gap (1E), between being somebody's turn to do
Gap (1E) is used for placing intermediate；The top panel (1A) of wedge shape wave-absorber (1) is provided with cable-through hole (1A1),
This cable-through hole (1A1) passes through for the electric wire being connected with the both positive and negative polarity of platinum resistance thermistor (2)；Wedge shape wave-absorber (1)
Long panel (1D) be oppositely arranged with short panel (1B) and skewback (1C)；
The wedged gap of wedge shape wave-absorber (1) is designated as β, β=5 °～30 °；Between on wedge shape wave-absorber (1)
Gap (1E) is designated as γ, γ=5 °～15 ° with the angle of long panel (1D)；In order to meet D wave band standard square
The requirement of shape waveguide inside dimension, concrete size has: a1=1.70, b1=0.83, h1=0.5L～0.8L, m=1b1~
3b1, w=0.1b1～0.3b1；
Platinum resistance thermistor (2) is that employing is covered platinum lithographic technique and is produced on dielectric-slab, described dielectric-slab can be A every
Plate (3) or B dividing plate (4)；If being produced on A dividing plate (3), then with B dividing plate (4) gland；If system
Make on B dividing plate (4), then with A dividing plate (3) gland；
The configuration of platinum resistance thermistor (2) can be a slab construction, can also to be interval identical crenel structure,
Can also be to be spaced different crenel structures；
Under conditions of ensureing that platinum resistance thermistor (2) can be operated in 200 Ω, cover platinum etching total length and be designated as L,
The resistivity of platinum (Pt) material is ρ=2.22 × 10-7, the resistance of platinum resistance thermistor (2) is R=200,
When resistance meetsTime, then have
End cap (5) is provided with A cable-through hole (5A)；This A cable-through hole (5A) is used for and platinum resistance thermistor (2)
Both positive and negative polarity connect electric wire pass through；；
End cap (5) is arranged on the top of A housing (6) and B housing (7), A housing (6) and B housing (7)
Lower section be arranged on waveguide flange (8)；
The cross section of A housing (6) is U-shaped configuration；A housing (6) is provided with A transverse slat (6A), A gripper shoe
(6B) with B gripper shoe (6C), A gripper shoe (6B) is placed in parallel with B gripper shoe (6C), and A is horizontal
Plate (6A) is placed between A gripper shoe (6B) and B gripper shoe (6C)；A gripper shoe (6B) supports with B
Being equipped with screwed hole on plate (6C), this screwed hole is used for placing screw (9)；
The cross section of B housing (7) is U-shaped configuration；B housing (7) is provided with B transverse slat (7A), C gripper shoe
(7B) with D gripper shoe (7C), C gripper shoe (7B) is placed in parallel with D gripper shoe (7C), and B is horizontal
Plate (7A) is placed between C gripper shoe (7B) and D gripper shoe (7C)；C gripper shoe (7B) is propped up with D
Being equipped with screwed hole on fagging (7C), this screwed hole is used for placing screw (9)；
Waveguide flange (8) is provided with outer disc (8A) and inner disk (8B), and inner disk (8B) is provided with square
Shape through hole (8B1)；This rectangular through-hole (8B1) is used for installing the wedge shape afterbody of wedge shape wave-absorber (1)；Outer disc
(8A) it is provided with through hole (8A1), realizes waveguide flange (8) by placing screw in through hole (8A1)
It is fixed with outside erecting bed.
A kind of thermo-electric conversion sensor being applied to 110GHz～170GHz frequency microcalorimeter of present invention design
Advantage be:
The Broadband Matching of thermo-electric conversion sensor the most of the present invention is good, owing to have employed the version of matched load, makes
The absorbing property obtaining whole sensor is good, and its standing-wave ratio is little.
It is high that the direct current of thermo-electric conversion sensor the most of the present invention substitutes efficiency, owing to the wedge shape of thermo-electric conversion sensor internal inhales ripple
Body carries out THz wave absorption, and its internal platinum resistance thermistor carries out direct current replacement, and both distances are close,
Can be consistent with apparent position, therefore direct current substitutes efficiency height.
The structure of thermo-electric conversion sensor the most of the present invention is prone to processing, it is simple to assembling.
Accompanying drawing explanation
Fig. 1 is face of the facing structure chart of thermo-electric conversion sensor of the present invention.
Figure 1A is the external structure of thermo-electric conversion sensor of the present invention.
Figure 1B is the exploded view of thermo-electric conversion sensor of the present invention.
Fig. 2 is the structure chart of thermoelectric conversion component in thermo-electric conversion sensor of the present invention.
Fig. 2 A is another viewing angle constructions figure of thermoelectric conversion component in thermo-electric conversion sensor of the present invention.
Fig. 2 B is A dividing plate and the structure chart of platinum resistance thermistor in thermo-electric conversion sensor of the present invention.
Fig. 3 is the structure chart of wedge shape wave-absorber in thermo-electric conversion sensor of the present invention.
Fig. 3 A is face of the facing structure chart of wedge shape wave-absorber in thermo-electric conversion sensor of the present invention.
Fig. 4 is the structure chart of platinum resistance thermistor in thermo-electric conversion sensor of the present invention.
Fig. 5 is the frequency graph of a relation with standing-wave ratio of thermo-electric conversion sensor of the present invention.
Fig. 6 is the replacement efficiency chart of thermo-electric conversion sensor of the present invention.
| 1. wedge shape wave-absorber | 1A. top panel | 1A1. cable-through hole |
| The short panel of 1B. | 1C. skewback | The long panel of 1D. |
| 1E. gap | 2. platinum resistance thermistor | 3.A dividing plate |
| 4.B dividing plate | 5. end cap | 5A.A cable-through hole |
| 6.A housing | 6A.A transverse slat | 6B.A gripper shoe |
| 6C.B gripper shoe | 7.B housing | 7A.B transverse slat |
| 7B.C gripper shoe | 7C.D gripper shoe | 8. waveguide flange |
| 8A. outer disc | 8A1. through hole | 8B. inner disk |
| 8B1. rectangular through-hole |
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention is described in further detail.
Seeing shown in Fig. 1, Figure 1A, Figure 1B, the present invention devises one and is applied to 110GHz～170GHz
The thermo-electric conversion sensor of frequency microcalorimeter, this thermo-electric conversion sensor includes wedge shape wave-absorber 1, platinum temperature-sensitive electricity
Resistance 2, A dividing plate 3, B dividing plate 4, end cap 5, A housing 6, B housing 7 and waveguide flange 8, A dividing plate 3
Identical with the structure of B dividing plate 4, A housing 6 is identical with the structure of B housing 7.Wherein, wedge shape wave-absorber 1,
End cap 5, A housing 6, B housing 7 and waveguide flange 8 constitute matched load.Platinum resistance thermistor 2, A dividing plate 3
Intermediate is constituted with B dividing plate 4.Intermediate is arranged in the gap of wedge shape wave-absorber 1, and wedge shape wave-absorber 1 is installed
On waveguide flange 8, and end cap 5, A housing 6 and B housing 7 are arranged on the outside of wedge shape wave-absorber 1.
Wedge shape wave-absorber 1
Seeing shown in Figure 1B, Fig. 2, Fig. 2 A, Fig. 3, Fig. 3 A, wedge shape wave-absorber 1 is formed in one structural member.
Wedge shape wave-absorber 1 is provided with gap 1E, and this gap 1E is used for placing intermediate.The top panel of wedge shape wave-absorber 1
1A is provided with cable-through hole 1A1, and this cable-through hole 1A1 leads to for the electric wire being connected with the both positive and negative polarity of platinum resistance thermistor 2
Cross.The long panel 1D of wedge shape wave-absorber 1 is oppositely arranged with short panel 1B and skewback 1C.Wedge shape wave-absorber 1
Select carbonyl iron materials processing.
In the present invention, the physical dimension of wedge shape wave-absorber 1 is:
The length of wedge shape wave-absorber 1 is designated as a1, unit is, millimeter；
The width of wedge shape wave-absorber 1 is designated as b1(width of the longest panel 1D), unit is, millimeter；
The height of wedge shape wave-absorber 1 is designated as h1(length of the longest panel 1D), unit is, millimeter；
The bottom of wedge shape wave-absorber 1 is designated as m with the spacing of the bottom of gap 1E, and unit is, millimeter；
The spacing of the bottom of the long panel 1D on wedge shape wave-absorber 1 and gap 1E is designated as w, and unit is, millimeter；
The wedged gap of wedge shape wave-absorber 1 is designated as β, β=5 °～30 °；
The angle of the gap 1E on wedge shape wave-absorber 1 and long panel 1D is designated as γ, γ=5 °～15 °.
In the present invention, in order to meet the requirement of D wave band standard rectangular waveguide inside dimension, concrete size has:
a1=1.70, b1=0.83, h1=0.5L～0.8L, m=1b1～3b1, w=0.1b1～0.3b1.For standard square
The requirement of shape waveguide with reference to " microwave engineering " (third edition) page 589, and Zhang Zhaoyi, Zhou Lezhu, Wu Deming translate,
The 8th printing January in 2014.
Platinum resistance thermistor 2
Seeing shown in Figure 1B, Fig. 2 B, Fig. 4, platinum resistance thermistor 2 is covered platinum lithographic technique for employing and is produced on medium
On plate, described dielectric-slab can be A dividing plate 3 or B dividing plate 4.If being produced on A dividing plate 3, then with B every
Plate 4 gland.If being produced on B dividing plate 4, then with A dividing plate 3 gland.A dividing plate 3 and B dividing plate 4 are two
Silica material is processed.
The configuration of platinum resistance thermistor 2 can be a slab construction, can also to be interval identical crenel structure, also
Can be to be spaced different crenel structures.
In the present invention, the physical dimension of platinum resistance thermistor 2 is:
The platinum width that covers of platinum resistance thermistor 2 is designated as a, and unit is, millimeter；
The platinum thickness that covers of platinum resistance thermistor 2 is designated as b, and unit is, millimeter；The product of a Yu b is platinum resistance thermistor 2
Sectional area, be designated as S, unit is, square millimeter；
The platinum longitudinally length of covering of platinum resistance thermistor 2 is designated as c, and unit is, millimeter；
The platinum laterally length of covering of platinum resistance thermistor 2 is designated as d, and unit is, millimeter；
The concavo-convex configuration interval of platinum resistance thermistor 2 is designated as e, and unit is, millimeter.
Under conditions of ensureing that platinum resistance thermistor 2 can be operated in 200 Ω, cover platinum etching total length and be designated as L, single
Position is, millimeter.
The resistivity of platinum (Pt) material is ρ=2.22 × 10-7, unit is Ω m.
The resistance of platinum resistance thermistor 2 is R=200, and unit is Ω.
According to resistance computing formulaThen have
End cap 5
Seeing shown in Figure 1B, end cap 5 is provided with A cable-through hole 5A.This A cable-through hole 5A is for electric with platinum temperature-sensitive
The electric wire that the both positive and negative polarity of resistance 2 connects passes through.End cap 5 is processed for nickel-bass alloy material.
End cap 5 is arranged on the top of A housing 6 and B housing 7, and the lower section of A housing 6 and B housing 7 is installed
On waveguide flange 8.
A housing 6
Seeing shown in Figure 1B, the cross section of A housing 6 is U-shaped configuration.A housing 6 is provided with A transverse slat 6A, A
Gripper shoe 6B and B gripper shoe 6C, A gripper shoe 6B is placed in parallel with B gripper shoe 6C, and A transverse slat 6A
It is placed between A gripper shoe 6B and B gripper shoe 6C.It is equipped with screw thread in A gripper shoe 6B and B gripper shoe 6C
Hole, this screwed hole is used for placing screw 9.
B housing 7
Seeing shown in Figure 1B, the cross section of B housing 7 is U-shaped configuration.B housing 7 is provided with B transverse slat 7A, C
Gripper shoe 7B and D gripper shoe 7C, C gripper shoe 7B is placed in parallel with D gripper shoe 7C, and B transverse slat 7A
It is placed between C gripper shoe 7B and D gripper shoe 7C.It is equipped with spiral shell in C gripper shoe 7B and D gripper shoe 7C
Pit, this screwed hole is used for placing screw 9.A housing 6 is processed for nickel-bass alloy material with B housing 7.
Waveguide flange 8
Seeing shown in Fig. 1, Figure 1B, waveguide flange 8 is provided with outer disc 8A and inner disk 8B, inner disk 8B
It is provided with rectangular through-hole 8B1.This rectangular through-hole 8B1 is for installing the wedge shape afterbody of wedge shape wave-absorber 1.Outer disc
8A is provided with through hole 8A1, realizes waveguide flange 8 and outside installation by placing screw in through hole 8A1
Platform is fixed.Waveguide flange 8 is processed for nickel-bass alloy material.
The pattern of the thermo-electric conversion sensor measurement of the employing present invention:
(A) in room temperature TRoom temperatureUnder, by Terahertz power PTHzTested equal to 110GHz～170GHz frequency
Object (operating power seat) is carried on thermo-electric conversion sensor；In making the thermo-electric conversion sensor that the present invention designs
The temperature of the wedge shape wave-absorber 1 in portion raises, and then the temperature of platinum resistance thermistor 2 is raised, by platinum under the conditions of this
The maximum temperature that critesistor 2 arrives is designated as TTHz；
(B) in room temperature TRoom temperatureUnder, by bias direct current power PDCMeasurand (reference power seat) be carried in heat
On electricity conversion sensor；Make the temperature liter of the wedge shape wave-absorber 1 of the thermo-electric conversion sensor internal that the present invention designs
Height, and then the temperature of platinum resistance thermistor 2 is raised, the maximum temperature that platinum resistance thermistor under the conditions of this 2 is arrived
It is designated as TDC；
(C) T is comparedTHzWith TDC；If identical, then PTHzOutput is equal to PDC；If differing, then regulate PDC,
Make TTHzEqual to TDC。
The standing-wave ratio of thermo-electric conversion sensor shown in Figure 5, description is that the thermo-electric conversion that the present invention designs passes
Sensor is for the assimilation effect of Terahertz power.In figure, abscissa is frequency (unit GHz), and vertical coordinate is standing-wave ratio
(constant guiding principle, without unit), standing-wave ratio is less than 1.2, illustrates that the Terahertz power being applied on waveguide flange 8 is the biggest
Majority is all absorbed by sensor, and Broadband Matching is good.
Replacement relationship between efficiency:
According to substituting efficiency eta computing formulaWherein PDCFor the dc power applied, PTHzFor by thermoelectricity
The Terahertz power that conversion sensor absorbs, T is when after Terahertz power absorption, the temperature that platinum resistance thermistor senses.
After thermo-electric conversion sensor absorbs 110GHz～170GHz power, platinum resistance thermistor 2 temperature reaches stable temperature
During angle value T, then need certain dc power to reach identical temperature value T, substitute efficiency as shown in Figure 6.In figure,
Abscissa is dc power (unit dBm), and vertical coordinate, for substituting efficiency (constant guiding principle, without unit), substitutes efficiency
It is similar to 1, illustrates that 110GHz～170GHz power can be traced to the source by dc power, and substitution effects is good.
In the present invention, it is that Terahertz power is traceable on direct current or low frequency power.Being applied to of present invention design
The thermo-electric conversion sensor of 110GHz～170GHz frequency microcalorimeter selects have effigurate carbonyl iron and makees
For Terahertz power absorbing material in load.Sensor specific works principle is first to apply DC offset voltage, no
Adding Terahertz power, critesistor can detect variations in temperature, uses the mode of self-balancing bridge, makes system reach flat
Weighing apparatus, at this moment records DC voltage VRF_OFF, then applying Terahertz power, thermistor temp rises, negative feedback
Circuit regulation direct-current bias voltage, again with the mode of self-balancing bridge so that system reaches balance, records direct current
Voltage VRF_ON.At this moment the direct current obtained substitutes the difference that efficiency is two dc powers.Owing to Terahertz power is impossible
Being supported completely and sponge, dc power is different with the dissipation distribution in the load of Terahertz power simultaneously, thus causes
The heat distribution each produced also is not quite similar, so being replaced with efficiency will set up connection between Terahertz power and dc power
System.
Claims (5)
1. being applied to a thermo-electric conversion sensor for 110GHz～170GHz frequency microcalorimeter, it is special
Levy and be: this thermo-electric conversion sensor include wedge shape wave-absorber (1), platinum resistance thermistor (2), A dividing plate (3),
B dividing plate (4), end cap (5), A housing (6), B housing (7) and waveguide flange (8)；
Wherein, A dividing plate (3) is identical with the structure of B dividing plate (4)；
Wherein, A housing (6) is identical with the structure of B housing (7)；
Wherein, wedge shape wave-absorber (1), end cap (5), A housing (6), B housing (7) and waveguide flange (8)
Constitute matched load；
Wherein, platinum resistance thermistor (2), A dividing plate (3) constitute intermediate with B dividing plate (4)；Intermediate is installed
In the gap of wedge shape wave-absorber (1), wedge shape wave-absorber (1) is arranged on waveguide flange (8), and end cap (5),
A housing (6) and B housing (7) are arranged on the outside of wedge shape wave-absorber (1)；
Wedge shape wave-absorber (1) is formed in one structural member；Wedge shape wave-absorber (1) is provided with gap (1E), between being somebody's turn to do
Gap (1E) is used for placing intermediate；The top panel (1A) of wedge shape wave-absorber (1) is provided with cable-through hole (1A1),
This cable-through hole (1A1) passes through for the electric wire being connected with the both positive and negative polarity of platinum resistance thermistor (2)；Wedge shape wave-absorber (1)
Long panel (1D) be oppositely arranged with short panel (1B) and skewback (1C)；
The wedged gap of wedge shape wave-absorber (1) is designated as β, β=5 °～30 °；Between on wedge shape wave-absorber (1)
Gap (1E) is designated as γ, γ=5 °～15 ° with the angle of long panel (1D)；In order to meet D wave band standard square
The requirement of shape waveguide inside dimension, concrete size has: a1=1.70, b1=0.83, h1=0.5L～0.8L, m=1b1~
3b1, w=0.1b1～0.3b1；
Platinum resistance thermistor (2) is that employing is covered platinum lithographic technique and is produced on dielectric-slab, described dielectric-slab can be A every
Plate (3) or B dividing plate (4)；If being produced on A dividing plate (3), then with B dividing plate (4) gland；If system
Make on B dividing plate (4), then with A dividing plate (3) gland；
The configuration of platinum resistance thermistor (2) can be a slab construction, can also to be interval identical crenel structure,
Can also be to be spaced different crenel structures；
Under conditions of ensureing that platinum resistance thermistor (2) can be operated in 200 Ω, cover platinum etching total length and be designated as L,
The resistivity of platinum (Pt) material is ρ=2.22 × 10-7, the resistance of platinum resistance thermistor (2) is R=200,
When resistance meetsTime, then have
End cap (5) is provided with A cable-through hole (5A)；This A cable-through hole (5A) is used for and platinum resistance thermistor (2)
Both positive and negative polarity connect electric wire pass through；；
End cap (5) is arranged on the top of A housing (6) and B housing (7), A housing (6) and B housing (7)
Lower section be arranged on waveguide flange (8)；
The cross section of A housing (6) is U-shaped configuration；A housing (6) is provided with A transverse slat (6A), A gripper shoe
(6B) with B gripper shoe (6C), A gripper shoe (6B) is placed in parallel with B gripper shoe (6C), and A is horizontal
Plate (6A) is placed between A gripper shoe (6B) and B gripper shoe (6C)；A gripper shoe (6B) supports with B
Being equipped with screwed hole on plate (6C), this screwed hole is used for placing screw (9)；
The cross section of B housing (7) is U-shaped configuration；B housing (7) is provided with B transverse slat (7A), C gripper shoe
(7B) with D gripper shoe (7C), C gripper shoe (7B) is placed in parallel with D gripper shoe (7C), and B is horizontal
Plate (7A) is placed between C gripper shoe (7B) and D gripper shoe (7C)；C gripper shoe (7B) is propped up with D
Being equipped with screwed hole on fagging (7C), this screwed hole is used for placing screw (9)；
Waveguide flange (8) is provided with outer disc (8A) and inner disk (8B), and inner disk (8B) is provided with square
Shape through hole (8B1)；This rectangular through-hole (8B1) is used for installing the wedge shape afterbody of wedge shape wave-absorber (1)；Outer disc
(8A) it is provided with through hole (8A1), realizes waveguide flange (8) by placing screw in through hole (8A1)
It is fixed with outside erecting bed.
A kind of 110GHz～170GHz frequency microcalorimeter of being applied to the most according to claim 1
Thermo-electric conversion sensor, it is characterised in that: wedge shape wave-absorber (1) selects carbonyl iron materials processing.A dividing plate (3)
It is earth silicon material processing with B dividing plate (4).End cap (5) is nickel-bass alloy material processing.A housing (6)
It is nickel-bass alloy material processing with B housing (7).Waveguide flange 8 is processed for nickel-bass alloy material.
One the most according to claim 1 and 2 is applied to 110GHz～170GHz frequency trace heat
The thermo-electric conversion sensor of meter, it is characterised in that the measurement pattern of described thermo-electric conversion sensor is:
(A) in room temperature TRoom temperatureUnder, by Terahertz power PTHzTested equal to 110GHz～170GHz frequency
Object is carried on thermo-electric conversion sensor；The temperature making wedge shape wave-absorber (1) raises, and then makes platinum temperature-sensitive
The temperature of resistance (2) raises, and the maximum temperature that platinum resistance thermistor under the conditions of this (2) arrives is designated as TTHz；
(B) in room temperature TRoom temperatureUnder, by bias direct current power PDCMeasurand be carried on thermo-electric conversion sensor；
The temperature making wedge shape wave-absorber (1) raises, and then the temperature of platinum resistance thermistor (2) is raised, by this
The maximum temperature that under part, platinum resistance thermistor (2) arrives is designated as TDC；
(C) T is comparedTHzWith TDC；If identical, then PTHzOutput is equal to PDC；If differing, then regulate PDC,
Make TTHzEqual to TDC。
One the most according to claim 1 and 2 is applied to 110GHz～170GHz frequency trace heat
The thermo-electric conversion sensor of meter, it is characterised in that: the replacement efficiency of described thermo-electric conversion sensor is
Wherein PDCFor the dc power applied, PTHzFor the Terahertz power absorbed by thermo-electric conversion sensor, T is ought be too
After hertz power absorption, the temperature that platinum resistance thermistor senses.
One the most according to claim 1 and 2 is applied to 110GHz～170GHz frequency trace heat
Meter thermo-electric conversion sensor, it is characterised in that: described thermo-electric conversion sensor for the absorption of Terahertz power, its
Standing-wave ratio is less than 1.2, illustrates that the Terahertz power overwhelming majority being applied on waveguide flange (8) is by sensor institute
Absorbing, Broadband Matching is good.
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