CN106007674A - High-quality-factor stable-temperature microwave dielectric ceramic LiFeGe2O6 - Google Patents

High-quality-factor stable-temperature microwave dielectric ceramic LiFeGe2O6 Download PDF

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CN106007674A
CN106007674A CN201610564800.5A CN201610564800A CN106007674A CN 106007674 A CN106007674 A CN 106007674A CN 201610564800 A CN201610564800 A CN 201610564800A CN 106007674 A CN106007674 A CN 106007674A
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dielectric ceramic
lifege2o6
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powder
microwave dielectric
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方维双
段炼
苏和平
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Guilin University of Technology
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Guilin University of Technology
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Abstract

The invention discloses high-quality-factor stable-temperature ultralow dielectric constant microwave dielectric ceramic LiFeGe2O6 and a preparation method thereof. The preparation method comprises the following steps: (1) weighing and proportioning original powder (with the purity of 99.9% or above by weight) of Li2CO3, Fe2O3 and GeO2 according to composition of LiFeGe2O6; (2) performing wet-type ball-milling and mixing on the raw materials obtained in the step (1) for 12 h, drying and then pre-burning for 6 h in the atmosphere of 1100 DEG C, wherein the ball-milling medium is distilled water; (3) adding a binder into the powder prepared in the step (2), pelletizing, then pressing for shaping, and finally, sintering for 4 h in the atmosphere of 1,150-1,200 DEG C, wherein the binder is a polyvinyl alcohol solution with the mass concentration of 5%, and polyvinyl alcohol accounts for 3% of the total mass of the powder. The prepared high-quality-factor stable-temperature microwave dielectric ceramic LiFeGe2O6 has excellent sintering performance below 1,200 DEG C, has the dielectric constant of 6.5-6.9 and the quality factor Qf of 80,000-101,000 GHz, is small in temperature coefficient of resonance frequency and has an extremely high application value in the industry.

Description

High quality factor temperature-stable microwave dielectric ceramic LiFeGe2O6
Technical field
The present invention relates to dielectric ceramic material, particularly relate to for manufacture microwave frequency use ceramic substrate, Dielectric ceramic materials of microwave device such as resonator and wave filter and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to be applied to conduct in microwave frequency band (mainly UHF and SHF frequency range) circuit Dielectric material also completes the pottery of one or more functions, is widely used as resonator, filtering in modern communication The components and parts such as device, dielectric substrate and medium wave circuit, are the key foundation materials of modern communication technology, exist The aspects such as portable mobile phone, automobile telephone, wireless phone, television satellite accepter and military radar have Highly important application, modern communication instrument miniaturization, integrated during just playing increasing Effect.
It is applied to the dielectric ceramic of microwave frequency band, the requirement of following dielectric property should be met: (1) seriation is situated between Electric constant εrTo adapt to different frequency and the requirement of different application occasion;(2) high quality factor q value or low Dielectric loss tan δ to reduce noise, typically require Qf >=3000GHz;(3) the temperature system of resonant frequency Number τfThe least to ensure the heat stability that device has had ,-10ppm/ DEG C≤τ of general requirementf≤+10 ppm/℃.Just have tried to from late 1930s in the world dielectric substance is applied to microwave technology, And prepare TiO2Microwave dielectric filter, but its temperature coefficient of resonance frequency τfToo greatly cannot be practical. Since the seventies in last century, start the large-scale development to medium ceramic material, according to being relatively situated between Electric constant εrSize different from use frequency range, generally can have been developed that and the microwave-medium developed Pottery is divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al2O3-TiO2、Y2BaCuO5、 MgAl2O4And Mg2SiO4Deng, its εr≤ 20, quality factor q × f >=50000GHz, τf≤10ppm/℃。 It is mainly used in microwave base plate and high-end microwave device.
(2) low εrWith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta2O5, BaO-ZnO-Ta2O5Or BaO-MgO-Nb2O5,BaO-ZnO-Nb2O5System or being combined between them System MWDC material.Its εr=20~35, Q=(1~2) × 104(under f >=10GHz), τf≈0.Main As dielectric resonance device in the microwave communication equipments such as the direct broadcasting satellite of f >=8GHz to be applied to.
(3) medium εrWith the microwave dielectric ceramic of Q-value, it is mainly with BaTi4O9、Ba2Ti9O20(Zr, Sn)TiO4Deng the MWDC material for base, its εr=35~45, Q=(6~9) × 103(f=3~- Under 4GHz), τf≤5ppm/℃.Be mainly used in the microwave military radar in 4~8GHz frequency ranges and As dielectric resonance device in communication system.
(4) high εrAnd the microwave dielectric ceramic that Q-value is relatively low, it is mainly used in 0.8~4GHz frequency range Civilian mobile communcations system, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, Kolar, Kato et al. finds and have studied perovskite-like tungsten bronze type BaO Ln in succession2O3—TiO2Series (Ln=La, Sm, Nd or Pr etc., be called for short BLT system), complex perovskite structure CaO Li2O—Ln2O3—TiO2System Row, lead base series material, Ca1-xLn2x/3TiO3It is contour εrMicrowave dielectric ceramic, wherein BLT system BaO—Nd2O3—TiO2Material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO3Dielectric constant reaches 105。
The sintering temperature of the above material system is generally greater than 1300 DEG C, it is impossible to directly and Ag and Cu etc. Low-melting-point metal burns formation multilayer ceramic capacitor altogether.In recent years, along with LTCC Technology (Low Temperature Co-fired Ceramics, LTCC) development and microwave multilayer device development requirement, state Some low grade fever's system materials have been carried out exploring widely and studying by inside and outside research worker, mainly use micro- Crystal glass or glassceramic composites system, have of a relatively high dielectric loss mutually because of low-melting glass, The existence of glass phase substantially increases the dielectric loss of material.Therefore the low fired microwave dielectric without glass phase is developed Ceramic material is the emphasis of current research.
Explore novel with exploitation can be during low fired microwave dielectric ceramic materials, intrinsic sintering temperature is low The material bodies such as Li based compound, Bi based compound, tungstates architecture compound and tellurate architecture compound System gets the attention and studies, but due to three performance indications (ε of microwave dielectric ceramicrWith Q f And τfIt is that the relation of mutually restriction is (see document: the system between microwave dielectric ceramic materials dielectric properties between) About relation, Zhu Jianhua, Liang Fei, Wang little Hong, Lv Wenzhong, electronic component and material, in March, 2005 3rd phase), meet three performance requirements and the single-phase microwave-medium ceramics of low temperature sintering is considerably less, mainly Be that their temperature coefficient of resonance frequency is the most excessive or quality factor are on the low side and cannot application request. Research major part to microwave-medium ceramics is the summary of experience drawn by great many of experiments at present, does not but have Complete theory illustrates the relation of microstructure and dielectric properties, therefore, and the most also cannot be from chemical combination Predict its microwave dielectric property such as temperature coefficient of resonance frequency and quality factor in the composition of thing and structure, this Largely limit low temperature co-fired technology and the development of microwave multilayer device.Exploring can low temperature with exploitation Sintering has near-zero resonance frequency temperature coefficient (-10ppm/ DEG C≤τ simultaneouslyf≤+10ppm/ DEG C) and relatively The microwave dielectric ceramic of high quality factor be those skilled in the art always thirst for solve but be difficult to all the time obtain A successfully difficult problem.We are to consisting of LiFeGe2O6、LiAlGe2O6And LiBGe2O6Pottery carry out Sintering and Study on microwave dielectric property, find that their sintering temperature is less than 1200 DEG C, wherein LiFeGe2O6 There is near-zero resonance frequency temperature coefficient and high quality factor, LiAlGe2O6And LiBGe2O6Pottery is partly to lead Body, its dielectric loss is big and does not has resonance peak, therefore cannot as can be practical microwave-medium ceramics.
Summary of the invention
It is an object of the invention to provide that a kind of to have good heat stability micro-with low-loss ultralow dielectric Ripple dielectric ceramic material and preparation method thereof.
The chemical composition of the microwave dielectric ceramic material of the present invention is LiFeGe2O6
The preparation method step of this microwave dielectric ceramic material is:
(1) by Li that purity is more than 99.9% (percentage by weight)2CO3、Fe2O3And GeO2Original Powder presses LiFeGe2O6Composition weigh dispensing.
(2) being mixed 12 hours by step (1) raw material wet ball-milling, ball-milling medium is distilled water, after drying Pre-burning 6 hours in 1100 DEG C of air atmosphere.
(3) after adding binding agent pelletize in the powder that step (2) prepares, re-compacted molding, finally 1150~1200 DEG C of air atmosphere sinter 4 hours;Described binding agent use mass concentration be 5% poly- Glycohol solution, polyvinyl alcohol addition accounts for the 3% of powder gross mass.
Advantages of the present invention: LiFeGe2O6Ceramic sintering temperature is relatively low, and cost of material is low;Its quality factor Qf value is up to 80000-101000GHz, and dielectric constant reaches 6.5~6.9, the temperature coefficient τ of its resonant frequencyfLittle, temperature stability is good;Can be widely used for the microwave devices such as various medium substrate, resonator and wave filter Manufacture, the technology needs of low temperature co-fired technology and microwave multilayer device can be met.
Detailed description of the invention
Embodiment:
Table 1 shows 3 specific embodiments and the microwave dielectric property thereof of the different sintering temperatures constituting the present invention Energy.Its preparation method as it has been described above, carry out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.
This pottery can be widely used for the manufacture of the microwave devices such as various medium substrate, resonator and wave filter, can Meet the technology needs of the system such as mobile communication and satellite communication.
Table 1:

Claims (1)

1. germanate is as an application for high quality factor temperature-stable microwave dielectric ceramic, its feature The chemical composition being described germanate is: LiFeGe2O6
The preparation method of described germanate concretely comprises the following steps:
(1) by Li that purity is more than 99.9% (percentage by weight)2CO3、Fe2O3And GeO2Original Powder presses LiFeGe2O6Composition weigh dispensing;
(2) being mixed 12 hours by step (1) raw material wet ball-milling, ball-milling medium is distilled water, after drying Pre-burning 6 hours in 1100 DEG C of air atmosphere;
(3) after adding binding agent pelletize in the powder that step (2) prepares, re-compacted molding, finally 1150~1200 DEG C of air atmosphere sinter 4 hours;Described binding agent use mass concentration be 5% poly- Glycohol solution, polyvinyl alcohol addition accounts for the 3% of powder gross mass.
CN201610564800.5A 2016-07-18 2016-07-18 High-quality-factor stable-temperature microwave dielectric ceramic LiFeGe2O6 Pending CN106007674A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110556525A (en) * 2019-08-21 2019-12-10 华南理工大学 lithium germanate, lithium germanate/graphite composite negative electrode material, preparation method thereof and application thereof in assembled lithium battery

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103130496A (en) * 2013-03-25 2013-06-05 桂林理工大学 Low-dielectric-constant microwave dielectric ceramic LiAlSi2O6 and preparation method thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103130496A (en) * 2013-03-25 2013-06-05 桂林理工大学 Low-dielectric-constant microwave dielectric ceramic LiAlSi2O6 and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110556525A (en) * 2019-08-21 2019-12-10 华南理工大学 lithium germanate, lithium germanate/graphite composite negative electrode material, preparation method thereof and application thereof in assembled lithium battery
CN110556525B (en) * 2019-08-21 2022-03-29 华南理工大学 Lithium germanate, lithium germanate/graphite composite negative electrode material, preparation method thereof and application thereof in assembled lithium battery

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