CN104744039B - Low-loss, temperature-stabilized and ultra-low dielectric constant type microwave dielectric ceramic LiZnV5O14 - Google Patents

Low-loss, temperature-stabilized and ultra-low dielectric constant type microwave dielectric ceramic LiZnV5O14 Download PDF

Info

Publication number
CN104744039B
CN104744039B CN201510099831.3A CN201510099831A CN104744039B CN 104744039 B CN104744039 B CN 104744039B CN 201510099831 A CN201510099831 A CN 201510099831A CN 104744039 B CN104744039 B CN 104744039B
Authority
CN
China
Prior art keywords
hours
dielectric ceramic
temperature
low
microwave dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510099831.3A
Other languages
Chinese (zh)
Other versions
CN104744039A (en
Inventor
方亮
孙宜华
李东升
孙小华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yidu Botong Electronic Co ltd
Original Assignee
China Three Gorges University CTGU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by China Three Gorges University CTGU filed Critical China Three Gorges University CTGU
Priority to CN201510099831.3A priority Critical patent/CN104744039B/en
Publication of CN104744039A publication Critical patent/CN104744039A/en
Application granted granted Critical
Publication of CN104744039B publication Critical patent/CN104744039B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Inorganic Insulating Materials (AREA)

Abstract

The invention discloses a temperature-stabilized and ultra-low dielectric constant type microwave dielectric ceramic LiZnV5O1 capable of being sintered at low temperature and a preparation method thereof. The method comprises the following steps: (1) weighting and mixing raw powder with purity exceeding 99.9% by weight of Li2CO3, ZnO and V2O5 according to the composition of the LiZnV5O1; (2) performing ball milling and mixing for the raw materials obtained in step (1) by a wet manner for 12 hours, wherein distilled water is used as a ball mill medium; pre-sintering for 6 hours in the atmosphere at temperature of 750 DEG C after drying; and (3) adding an adhesive to the powder obtained in the step (2), granulating, pressing and forming, and then sintering for 4 hours in the atmosphere at the temperature of 800 to 850 DEG C, wherein the adhesive is a polyving akohol solution with mass concentration of 5%; the quantity of added polyving akohol is 3% of the total mass of the powder. The ceramic prepared by the method can be sintered well at the temperature not greater than 850 DEGG C; the dielectric constant is up to 15.6 to 16.2; the quality factor (QF) is up to 119000 to 161000GHz; the resonant frequency temperature coefficients are small; the ceramic has extremely large application value in the industry.

Description

Low-loss temperature-stabilized ultralow dielectric microwave dielectric ceramic LiZnV5O14
Technical field
The present invention relates to dielectric ceramic material, particularly relate to for manufacturing dielectric ceramic materials of microwave device such as the ceramic substrate of microwave frequency use, resonator and wave filter and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to be applied in microwave frequency band (mainly UHF and SHF frequency range) circuit as dielectric material the pottery that completes one or more functions, the components and parts such as resonator, wave filter, dielectric substrate and medium wave circuit it are widely used as in modern communication, it it is the key foundation material of modern communication technology, have highly important application at aspects such as portable mobile phone, automobile telephone, wireless phone, television satellite accepter and military radars, modern communication instrument miniaturization, integrated during just playing increasing effect.
It is applied to the dielectric ceramic of microwave frequency band, should meet the requirement of following dielectric property: (1) seriation DIELECTRIC CONSTANT εrTo adapt to different frequency and the requirement of different application occasion;(2) high quality factor q value or low dielectric loss tan δ, to reduce noise, typically require Qf >=3000GHz;(3) the temperature coefficient τ of resonant frequencyfThe least to ensure the heat stability that device has had ,-10ppm/ DEG C≤τ of general requirementf≤+10ppm/℃.Just have tried to be applied to dielectric substance microwave technology in the world from late 1930s, and prepare TiO2Microwave dielectric filter, but its temperature coefficient of resonance frequency τfToo greatly cannot be practical.Since the seventies in last century, start the large-scale development to medium ceramic material, according to relative dielectric constant εrSize different from use frequency range, generally can will have been developed that and the microwave-medium ceramics developed be divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al2O3-TiO2、Y2BaCuO5、MgAl2O4And Mg2SiO4Deng, its εr≤ 20, quality factor q × f >=50000GHz, τf≤10ppm/℃.It is mainly used in microwave base plate and high-end microwave device.
(2) low εrWith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta2O5,BaO-ZnO-Ta2O5Or BaO-MgO-Nb2O5,BaO-ZnO-Nb2O5System or the hybrid system MWDC material between them.Its εr=20~35, Q=(1~2) × 104(under f >=10GHz), τf≈0.As dielectric resonance device in the microwave communication equipments such as the direct broadcasting satellite being mainly used in f >=8GHz.
(3) medium εrWith the microwave dielectric ceramic of Q-value, it is mainly with BaTi4O9、Ba2Ti9O20(Zr, Sn) TiO4Deng the MWDC material for base, its εr=35~45, Q=(6~9) × 103(under f=3~-4GHz), τf≤5ppm/℃.It is mainly used in the microwave military radar in 4~8GHz frequency ranges and communication system as dielectric resonance device.
(4) high εrAnd the microwave dielectric ceramic that Q-value is relatively low, it being mainly used in civilian mobile communcations system in 0.8~4GHz frequency range, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, Kolar, Kato et al. find and have studied perovskite-like tungsten bronze type BaO Ln in succession2O3—TiO2Series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO Li2O—Ln2O3—TiO2Series, lead base series material, Ca1-xLn2x/3TiO3It is contour εrMicrowave dielectric ceramic, wherein the BaO Nd of BLT system2O3—TiO2Material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO3Dielectric constant reaches 105.
The sintering temperature of the above material system is generally greater than 1300 DEG C, it is impossible to directly and the low-melting-point metal such as Ag and Cu burns formation multilayer ceramic capacitor altogether.In recent years, along with LTCC Technology (Low Temperature Co-fired Ceramics, LTCC) development and the requirement of microwave multilayer device development, some low grade fever's system materials have been carried out exploring widely and studying by research worker both domestic and external, mainly use devitrified glass or glassceramic composites system, have of a relatively high dielectric loss mutually because of low-melting glass, the existence of glass phase substantially increases the dielectric loss of material.Therefore the emphasis that the low fired microwave dielectric ceramic material without glass phase is current research is developed.
Explore novel with exploitation can be during low fired microwave dielectric ceramic materials, the material systems such as Li based compound, Bi based compound, tungstates architecture compound and tellurate architecture compound that intrinsic sintering temperature is low get the attention and study, but due to three performance indications (ε of microwave dielectric ceramicrWith Q f and τfIt is that the relation of mutually restriction is (see document: the restricting relation between microwave dielectric ceramic materials dielectric properties between), Zhu Jianhua, Liang Fei, Wang little Hong, Lv Wenzhong, electronic component and material, phase March the 3rd in 2005), meet three performance requirements and the single-phase microwave-medium ceramics of low temperature sintering be considerably less, mainly their temperature coefficient of resonance frequency is the most excessive or quality factor are on the low side and cannot application request.Research major part to microwave-medium ceramics is the summary of experience drawn by great many of experiments at present, but there is no complete theory to illustrate the relation of microstructure and dielectric properties, therefore, the most also its microwave dielectric property such as temperature coefficient of resonance frequency and quality factor be cannot predict from the composition of compound with structure, low temperature co-fired technology and the development of microwave multilayer device which greatly limits.Explore and low-temperature sintering can have near-zero resonance frequency temperature coefficient (-10ppm/ DEG C≤τ with exploitation simultaneouslyf≤+10ppm/ DEG C) it is that those skilled in the art thirst for solving always but are difficult to the difficult problem succeeded all the time with the microwave dielectric ceramic of higher figure of merit.
We are to composition LiZnV5O14、LiCuV5O14、LiNiV5O14Series compound carried out the research of microwave dielectric property, find their sintering temperature less than 900 DEG C, but only LiZnV5O14There is near-zero resonance frequency temperature coefficient and high quality factor, LiNiV5O14The temperature coefficient of resonance frequency τ of potteryf(respectively-77ppm/ DEG C) bigger than normal and dielectric loss the highest and cannot as can be practical microwave-medium ceramics.LiCuV5O14Resonance peak is not had at microwave frequency band for ion conductor.
Summary of the invention
It is an object of the invention to provide and a kind of there is good heat stability and low-loss, simultaneously low temperature sintering ultralow dielectric microwave dielectric ceramic material and preparation method thereof.
The chemical composition of the microwave dielectric ceramic material of the present invention is LiZnV5O14
The preparation method step of this microwave dielectric ceramic material is:
(1) by Li that purity is more than 99.9% (percentage by weight)2CO3, ZnO and V2O5Starting powder press LiZnV5O14Composition weigh dispensing.
(2) by step (1) raw material wet ball-milling mix 12 hours, ball-milling medium is distilled water, after drying in 750 DEG C of air atmosphere pre-burning 6 hours.
(3) after adding binding agent pelletize in the powder that step (2) prepares, re-compacted molding, finally sinter 4 hours in 800~850 DEG C of air atmosphere;Described binding agent uses mass concentration to be the poly-vinyl alcohol solution of 5%, and polyvinyl alcohol addition accounts for the 3% of powder gross mass.
Advantages of the present invention: LiZnV5O14Ceramic sintering temperature is low, and cost of material is low;Dielectric constant reaches 15.6~16.2, the temperature coefficient τ of its resonant frequencyfLittle, temperature stability is good;Quality factor q f value is up to 119000-161000GHz, can be widely used for the manufacture of the microwave devices such as various medium substrate, resonator and wave filter, can meet the technology needs of low temperature co-fired technology and microwave multilayer device.
Detailed description of the invention
Embodiment:
Table 1 shows 3 specific embodiments and the microwave dielectric property thereof of the different sintering temperatures constituting the present invention.Its preparation method as it has been described above, carry out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.
This pottery can be widely used for the manufacture of the microwave devices such as various medium substrate, resonator and wave filter, can meet the technology needs of the system such as mobile communication and satellite communication.
Table 1:

Claims (3)

1. the preparation method of a low-loss temperature-stabilized ultralow dielectric microwave dielectric ceramic, it is characterised in that the chemical composition of described microwave dielectric ceramic is: LiZnV5O14, dielectric constant is 15.6, and quality factor are 119000, and resonant frequency is-3;
The preparation method step of described microwave dielectric ceramic is:
(1) be 99.9%(percentage by weight by purity) more than Li2CO3, ZnO and V2O5Starting powder press LiZnV5O14Composition weigh dispensing;
(2) by step (1) raw material wet ball-milling mix 12 hours, ball-milling medium is distilled water, after drying in 750 DEG C of air atmosphere pre-burning 6 hours;
(3) after adding binding agent pelletize in the powder that step (2) prepares, re-compacted molding, finally sinter 4 hours in 800 DEG C of air atmosphere;Described binding agent uses mass concentration to be the poly-vinyl alcohol solution of 5%, and the addition of polyvinyl alcohol accounts for the 3% of powder gross mass.
2. the preparation method of a low-loss temperature-stabilized ultralow dielectric microwave dielectric ceramic, it is characterised in that the chemical composition of described microwave dielectric ceramic is: LiZnV5O14, dielectric constant is 16.2, and quality factor are 161000, and resonant frequency is-3;
The preparation method step of described microwave dielectric ceramic is:
(1) be 99.9%(percentage by weight by purity) more than Li2CO3, ZnO and V2O5Starting powder press LiZnV5O14Composition weigh dispensing;
(2) by step (1) raw material wet ball-milling mix 12 hours, ball-milling medium is distilled water, after drying in 750 DEG C of air atmosphere pre-burning 6 hours;
(3) after adding binding agent pelletize in the powder that step (2) prepares, re-compacted molding, finally sinter 4 hours in 830 DEG C of air atmosphere;Described binding agent uses mass concentration to be the poly-vinyl alcohol solution of 5%, and the addition of polyvinyl alcohol accounts for the 3% of powder gross mass.
3. the preparation method of a low-loss temperature-stabilized ultralow dielectric microwave dielectric ceramic, it is characterised in that the chemical composition of described microwave dielectric ceramic is: LiZnV5O14, dielectric constant is 16.0, and quality factor are 143000, and resonant frequency is-3;
The preparation method step of described microwave dielectric ceramic is:
(1) be 99.9%(percentage by weight by purity) more than Li2CO3, ZnO and V2O5Starting powder press LiZnV5O14Composition weigh dispensing;
(2) by step (1) raw material wet ball-milling mix 12 hours, ball-milling medium is distilled water, after drying in 750 DEG C of air atmosphere pre-burning 6 hours;
(3) after adding binding agent pelletize in the powder that step (2) prepares, re-compacted molding, finally sinter 4 hours in 850 DEG C of air atmosphere;Described binding agent uses mass concentration to be the poly-vinyl alcohol solution of 5%, and the addition of polyvinyl alcohol accounts for the 3% of powder gross mass.
CN201510099831.3A 2015-03-06 2015-03-06 Low-loss, temperature-stabilized and ultra-low dielectric constant type microwave dielectric ceramic LiZnV5O14 Active CN104744039B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510099831.3A CN104744039B (en) 2015-03-06 2015-03-06 Low-loss, temperature-stabilized and ultra-low dielectric constant type microwave dielectric ceramic LiZnV5O14

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510099831.3A CN104744039B (en) 2015-03-06 2015-03-06 Low-loss, temperature-stabilized and ultra-low dielectric constant type microwave dielectric ceramic LiZnV5O14

Publications (2)

Publication Number Publication Date
CN104744039A CN104744039A (en) 2015-07-01
CN104744039B true CN104744039B (en) 2017-01-11

Family

ID=53584404

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510099831.3A Active CN104744039B (en) 2015-03-06 2015-03-06 Low-loss, temperature-stabilized and ultra-low dielectric constant type microwave dielectric ceramic LiZnV5O14

Country Status (1)

Country Link
CN (1) CN104744039B (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS564203A (en) * 1979-06-25 1981-01-17 Tokyo Shibaura Electric Co Humidity sensitive element
CN103145420B (en) * 2013-04-01 2014-05-14 桂林理工大学 Vanadate microwave dielectric ceramic LiMVO4 capable of being sintered at low temperature and preparation method thereof

Also Published As

Publication number Publication date
CN104744039A (en) 2015-07-01

Similar Documents

Publication Publication Date Title
CN104628369B (en) A kind of ultralow dielectric temperature-stable microwave dielectric ceramic Li2mg4si4o13
CN104211391B (en) Temperature-stable medium dielectric constant microwave medium microwave dielectric ceramic Bi 3la 5ti 7o 26
CN104310985B (en) Ultralow dielectric microwave dielectric ceramic Ca2pO4f and preparation method thereof
CN104628384B (en) Low-loss temperature-stabilized medium dielectric constant microwave medium microwave dielectric ceramic LiBi2nbO6
CN107010952A (en) A kind of gallate ultralow dielectric microwave dielectric ceramic
CN105693232A (en) Temperature-stable ultra-low-dielectric constant microwave dielectric ceramic CuBi2V2O9
CN104311030B (en) A kind of temperature-stable ultralow dielectric microwave dielectric ceramic and preparation method thereof
CN104744039B (en) Low-loss, temperature-stabilized and ultra-low dielectric constant type microwave dielectric ceramic LiZnV5O14
CN105693233A (en) High-quality-factor low-dielectric-constant microwave dielectric ceramic Ca3Bi2V2O11
CN106986645A (en) A kind of molybdate temperature-stable ultralow dielectric microwave dielectric ceramic
CN105967667A (en) Application of LiInSiO4 as low-loss stable-temperature microwave dielectric ceramic
CN105645947A (en) Temperature-stable microwave dielectric ceramic Bi2TiGe3O11 allowing low temperature sintering and preparation method thereof
CN105645949A (en) Temperature-stable low-dielectric-constant microwave dielectric ceramic Ca3Bi2Ge3O12 and preparation method thereof
CN106242556A (en) A kind of low-loss temperature-stabilized microwave dielectric ceramic LiBSn2o6
CN106187103A (en) High quality factor temperature-stable ultralow dielectric microwave dielectric ceramic Li2srZnGeO5
CN106242557A (en) A kind of low-loss temperature-stabilized microwave dielectric ceramic LiBiSn2o6
CN106220146A (en) Temperature-stable ultralow dielectric microwave dielectric ceramic LiGa3ge2o9
CN105669185A (en) Low-dielectric-constant microwave dielectric ceramic Na2Zn2TiGeO7 and preparation method thereof
CN105174958A (en) Microwave dielectric ceramic Li4La3Nb3O14 with medium dielectric coefficient and preparation method of microwave dielectric ceramic Li4La3Nb3O14
CN104211398B (en) Temperature-stable ultralow dielectric microwave-medium ceramics LiY 3w 5o 20
CN105693230A (en) Temperature-stable ultra-low-dielectric constant microwave dielectric ceramic Cu3SmVO7
CN105693219A (en) Temperature-stable type ultralow dielectric constant microwave dielectric ceramic BaMg3B4O10 and preparation method thereof
CN106966726A (en) A kind of tungstates temperature-stable ultralow dielectric microwave dielectric ceramic containing lithium
CN107089830A (en) A kind of indate ultralow dielectric microwave dielectric ceramic
CN107056252A (en) A kind of indate temperature-stable ultralow dielectric microwave dielectric ceramic containing lithium

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20221123

Address after: No. 23, Wangcheng Road, Yaojiadian Town, Yidu City, Yichang City, Hubei Province 443399

Patentee after: YIDU BOTONG ELECTRONIC Co.,Ltd.

Address before: 443002 No. 8, University Road, Yichang, Hubei

Patentee before: CHINA THREE GORGES University

TR01 Transfer of patent right