CN106006544B - A kind of anti-icing method of surface hydrophobicity - Google Patents
A kind of anti-icing method of surface hydrophobicity Download PDFInfo
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- CN106006544B CN106006544B CN201610348435.4A CN201610348435A CN106006544B CN 106006544 B CN106006544 B CN 106006544B CN 201610348435 A CN201610348435 A CN 201610348435A CN 106006544 B CN106006544 B CN 106006544B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
Abstract
This application discloses a kind of anti-icing method of surface hydrophobicity, including：Silicon column array is made in silicon chip surface；Black silicon is made on the surface of the silicon column array and interval location.The anti-icing method of above-mentioned surface hydrophobicity that the application provides, since elder generation is in silicon chip surface making silicon column array, then black silicon is made on the surface of the silicon column array and interval location, which forms a species two level micro-nano structure, there is excellent effect in terms of Solid Surface Adhesion is reduced, processing technology is simple, can simplify the forming process of hydrophobic ice prevention structure, it is efficient and cost is low.
Description
Technical field
The invention belongs to aircraft engine precooling field, more particularly to a kind of anti-icing method of surface hydrophobicity.
Background technology
With the development of near space vehicle and space shuttle technology, pre- cold mould combined cycle engine is in Single Stage To Orbit
The application entered the orbit with two-stage in Reusable launch vehicles is more and more extensive.When engine is operated in air-breathing mode, incoming exists
It is compressed into progress effectively precooling is needed before combustion chamber, to reduce engine system energy consumption and ensure compressed air with suitable
Suitable temperature enters combustion chamber, so as to fulfill the high thrust-weight ratio of engine and high specific impulse, improves engine overall performance.And if pre-
Cooler surface freezes, and will increase pitot loss and flow distortion, and blocks gas channel, therefore, for air depth precooling
H type engine h, how surface it is anti-icing be forecooler design a key issue.A kind of anti-icing method in external surface at present
It is that liquid oxygen (temperature is about 55K) is first by air cooling to 240K, by water by increasing liquid oxygen injection system before forecooler
Steam is separated from air, still an alternative is that passing through spray cryogen (such as liquid nitrogen and liquid oxygen) into air incoming
Or specific condensed gas (such as methanol), the water vapour in air is condensed and discharged.However, both approaches generally existing
The problems such as energy consumption is big, seriously polluted or increase load.
In recent years, series of experiment research has been carried out for the anti-icing characteristic of different hydrophobic surfaces both at home and abroad.With cube week
Phase unit is object, have studied the influence for possessing the hydrophobic surface of periodic structure to ice addisive strength, compared for two level micro-nano and answers
Close structure, level-one micrometer structure and smooth silicon chip surface ice adhesion on air size, the results showed that the ice adhesion of two level micro-nano structure
Power is minimum, secondly level-one micrometer structure, is finally smooth surface, in addition, for two level micro-nano structure, its interval is smaller, ice
Adhesion is smaller, and no matter how its interval changes, and ice addisive strength is always better than other two kinds of surfaces of solids；In the prior art
A kind of method is that the level-one micron surface formed in polyethylene carries out modification composition micro-nano compound structure with Nano-class zinc oxide, right
This composite construction antifog and delay the characteristics such as freezing time to carry out experimental study, it turns out that at -5 DEG C, there is breeze
Under conditions of crossing, composite structure surface just starts to get wet until 1600s, embodies its good hydrophobicity；At -10 DEG C, until
7360s just freezes completely, has effectively delayed freezing time.Although this two level micro-nano structure is reducing Solid Surface Adhesion side
Face effect is best, but process it is this meet certain size shape need two level micro-nano structure surface it is extremely complex, of high cost,
Cause the practicality not strong.
The content of the invention
To solve the above problems, the present invention provides a kind of anti-icing method of surface hydrophobicity, can simplify hydrophobic anti-icing
Forming process, reduces production cost.
A kind of anti-icing method of surface hydrophobicity provided by the invention, including：
Silicon column array is made in silicon chip surface；
Black silicon is made on the surface of the silicon column array and interval location.
Preferably, in the anti-icing method of above-mentioned surface hydrophobicity,
It is described to include in silicon chip surface making silicon column array：
In the surface resist coating of the silicon chip；
Mask plate is set on the photoresist top, and photoetching and development are carried out to the photoresist, forms mask pattern；
The silicon chip after formation mask pattern is performed etching, forms silicon column array；
Remove the photoresist and clean.
Preferably, in the anti-icing method of above-mentioned surface hydrophobicity,
It is described to include on the surface of the silicon column array and the black silicon of interval location making：
Silicon chip with the silicon column array is put into sense coupling equipment and is performed etching, described
The surface of silicon column array and interval location form black silicon.
Preferably, in the anti-icing method of above-mentioned surface hydrophobicity,
The silicon chip after described pair of formation mask pattern performs etching, and forming silicon column array includes：
Carry out the first time etching of preset time；
Measure the depth of the silicon column array formed；
Using the preset time and the depth of the silicon column array, etch rate is calculated；
The time of second of etching is calculated using the etch rate, until forming the silicon column array with predetermined depth.
Preferably, in the anti-icing method of above-mentioned surface hydrophobicity,
It is described to be in silicon chip surface making silicon column array：
The silicon column array of square arrangement or rounded projections arranged is made in the silicon chip surface.
Preferably, in the anti-icing method of above-mentioned surface hydrophobicity,
It is described to be in silicon chip surface making silicon column array：
The silicon column array with rectangular shape or cylindrical shape is made in the silicon chip surface.
Preferably, in the anti-icing method of above-mentioned surface hydrophobicity,
It is described to be in silicon chip surface making silicon column array：
In the silicon chip surface making section length of side be 10 microns to 14 microns and edge spacing is 28 microns to 32 microns
Cuboid silicon column array, or the silicon chip surface make diameter of section be 10 microns to 14 microns and edge spacing be 28
The cylinder silicon column array of micron to 32 microns.
Preferably, in the anti-icing method of above-mentioned surface hydrophobicity,
It is described to be in silicon chip surface making silicon column array：
The silicon chip surface make rounded projections arranged diameter of section be 10 microns to 14 microns and edge spacing be 46
Micron to 50 microns of cylindrical shape silicon column array.
Preferably, in the anti-icing method of above-mentioned surface hydrophobicity,
It is described to be in silicon chip surface making silicon column array：
The silicon column array that altitude range is 42 microns to 56 microns is made in the silicon chip surface.
By foregoing description, the anti-icing method of above-mentioned surface hydrophobicity provided by the invention, since elder generation is in silicon chip surface
Silicon column array is made, then makes black silicon on the surface of the silicon column array and interval location, which forms a species two level
Micro-nano structure, has excellent effect in terms of Solid Surface Adhesion is reduced, and processing technology is simple, can simplify hydrophobic anti-icing
The forming process of structure, and cost is low, it is efficient.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the flow chart of the anti-icing method of the first surface hydrophobicity provided by the embodiments of the present application；
Fig. 2 is that the hydrophobic ice prevention structure made using the anti-icing method of the embodiment of the present application the first surface hydrophobicity is illustrated
Figure；
Fig. 3 is the schematic diagram of the silicon column array of rounded projections arranged；
Fig. 4 is the schematic diagram of the silicon column array of square arrangement.
Embodiment
For air depth precooling h type engine h, anti-freeze is the key technology of forecooler design, is learnt, adopted by research
Handled with hydrophobic surface and change pre-cooler surface characteristic, can make it have certain prevent or delay surface icing frosting special
Property, so as to solve forecooler ice formation issues.In view of the anti-icing characteristic of hydrophobic surface, can be solved using hydrophobic surface processing pre-
The anti-ice problem of device for cooling, wherein, it is physicochemical properties by varying surface that hydrophobic surface is anti-icing, reduces water droplet on surface
Adhesion, changes charging properties or mechanism, so as to reach anti-icing effect.This method has Non-energy-consumption, pollution-free, environmental-friendly etc.
Feature, therefore as the research hotspot in anti-icing frost prevention field.However, although hydrophobic surface can reduce ice addisive strength, delay
Drop freeze-off time, but the anti-icing anti-fog properties that the good surface of solids of hydrophobic performance may not have, i.e., the two is notable
Association, therefore, hydrophobic surface of the design with " dredging ice characteristic " are only emphasis.Black silicon and the black silicon of two level are learnt by test of many times
Surface has obvious effect in terms of anti-icing frost prevention, and processing technology is simple, and cost is relatively low, possesses certain practical value.Cause
This, core concept of the invention is exactly to utilize black silicon, there is provided a kind of anti-icing method of surface hydrophobicity, can simplify hydrophobic anti-icing knot
The forming process of structure, reduces production cost.
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment, belongs to the scope of protection of the invention.
On the basis of the icing frosting of pre-cooler surface is solved the problems, such as by hydrophobic surface processing, the present embodiment will be black
Silicon is hydrophobic and anti-icing for solving the problems, such as, and itself and level-one micron silicon column combined structure are gone out the black silicon face of two level.The application
The flow chart for the anti-icing method of the first surface hydrophobicity that embodiment provides is as shown in Figure 1, Fig. 1 is provided by the embodiments of the present application
The flow chart of the anti-icing method of the first surface hydrophobicity, this method comprises the following steps：
S1：Silicon column array is made in silicon chip surface；
Specifically, with reference to figure 2, Fig. 2 is to be dredged using what the anti-icing method of the embodiment of the present application the first surface hydrophobicity made
Water ice prevention structure schematic diagram, silicon column array 2 is made on the surface of silicon chip 1.
S2：Black silicon is made on the surface of the silicon column array and interval location.
Specifically, with continued reference to Fig. 2, black silicon 3 is made on the surface of the silicon column array 2 and interval location, wherein, black silicon
It is a kind of accessory substance obtained during ion reaction etching silicon chip, surface is with certain distribution density and height micron order
Structure, and a kind of rough surface, find that it has the characteristic not got wet during black silicon is cleaned, therefore the embodiment exists
It it is 0.5 micron to 1.5 by more than 10 microns of level-one silicon column and density on the premise of investigating black Si hydrophobic performance and anti-icing characteristic
Micron and the black silicon combination one species secondary structure of preparation that height is 5 microns to 10 microns, this black silicon structure of two level is big
The micron-sized black silicon of small scale is distributed with the surface and gap of scale micron order silicon column array.Since black silicon face is hydrophobic
, and after the black silicon that smaller minute yardstick is added on level-one micron scale construction obtains the black silicon of two level, its hydrophobicity obtains further
Improve, contact angle all more than 135 °, is up to 146.645 °；At different temperatures, the black silicon of class secondary structure is tested
With thickness change situation when drop freezes in ordinary silicon surface, it is known that the black silicon of class secondary structure has compared to common silicon chip
Preferable anti-freeze characteristic；In addition, when surface temperature is -12 DEG C, by black silicon, black silicon and the common polished silicon slice of class secondary structure
Frost thickness is relatively understood：Within the testing time, the white thickness of common silicon chip is the black silicon of 2.148mm, black silicon and class secondary structure
Respectively 1.798mm and 1.766mm, this black silicon for just embodying class secondary structure have the effect for suppressing Frosting rate.To sum up
Understand, such secondary structure has preferable hydrophobic performance and delays the characteristic of surface icing frosting.
By foregoing description, the anti-icing method of the first above-mentioned surface hydrophobicity provided by the embodiments of the present application, due to
Silicon column array first is made in silicon chip surface, then makes black silicon on the surface of the silicon column array and interval location, this is just formed
One species two level micro-nano structure, has excellent effect, processing technology is simple, can in terms of Solid Surface Adhesion is reduced
Simplify the forming process of hydrophobic ice prevention structure, and cost is low, it is efficient.
The embodiment of the present application additionally provides the anti-icing method of second of surface hydrophobicity, is prevented in the first above-mentioned surface hydrophobicity
It is described specifically to include the following steps in silicon chip surface making silicon column array on the basis of the method for ice：
S11：In the surface resist coating of the silicon chip；
By taking 4 inch silicon wafers as an example, prepare 4 inches of monocrystalline silicon piece, the then spin coating on silicon chip, photoresist thickness can be set
It is set to 1.7 μm.
S12：Mask plate is set on the photoresist top, and photoetching and development are carried out to the photoresist, forms mask
Figure；
Specifically, photoetching can be carried out with MA6 type ultraviolet photolithographic machines, covering for various specifications is formed after development on the silicon chip
Film pattern.
S13：The silicon chip after formation mask pattern is performed etching, forms silicon column array；
Specifically, it can be performed etching with sense coupling equipment.
S14：Remove the photoresist and clean.
Specifically, photoresist can be removed with acetone+isopropanol (IPA) and cleaned, the cycle of dimension is obtained
Silicon chip, then can be cut into the small pieces of 1.5cm*1.5cm, the mask figure of corresponding every kind of specification by array with Disco scribing machines
Shape.
The embodiment of the present application additionally provides the anti-icing method of the third surface hydrophobicity, is prevented in above-mentioned second of surface hydrophobicity
It is described specifically to include on the surface of the silicon column array and the black silicon of interval location making on the basis of ice method：
Silicon chip with the silicon column array is put into sense coupling equipment and is performed etching, described
The surface of silicon column array and interval location form black silicon.
Secondary structure of the prior art is the periodic structure of rule, is exactly primary structure surface and interval in the micron-scale
Nanometer-scale periodicity structure is all distributed with, since primary structure processing is just very complicated, nanoscale structures are smaller, and are at this
Body is just very fragile and the primary structure easily collapsed on construct, it is high with duration, cost so technique is difficult to realize.And the application
The structure that embodiment provides is not that two kinds of periodic structures of rule are composed, but in first-order cycle body structure surface with aperiodic
The black silicon modification of structure, processes and is very easy to realize, cost is low.
The embodiment of the present application additionally provides the 4th kind of anti-icing method of surface hydrophobicity, is prevented in the third above-mentioned surface hydrophobicity
On the basis of the method for ice, the silicon chip after formation mask pattern is performed etching in the step S13, forms silicon column battle array
Row can specifically comprise the following steps：
S131：Carry out the first time etching of preset time；
S132：Measure the depth of the silicon column array formed；
Specifically, the depth of silicon column array can be tested with step instrument.
S133：Using the preset time and the depth of the silicon column array, etch rate is calculated；
That is, using the depth divided by preset time of the silicon column array being etched to define, obtained result is exactly
Etch rate of the current process to silicon chip.
S134：The time of second of etching is calculated using the etch rate, until forming the silicon column with predetermined depth
Array.
Utilize this method for optimizing, it becomes possible to which accurate control, forms the depth of pre-set silicon column array.
The embodiment of the present application additionally provides the 5th kind of anti-icing method of surface hydrophobicity, is prevented in above-mentioned 4th kind of surface hydrophobicity
It is described to be in silicon chip surface making silicon column array on the basis of the method for ice：
The silicon column array of square arrangement or rounded projections arranged is made in the silicon chip surface.Wherein, the silicon of rounded projections arranged
Column array as shown in figure 3, Fig. 3 be rounded projections arranged silicon column array schematic diagram, silicon column array such as Fig. 4 institutes of square arrangement
Show, Fig. 4 is the schematic diagram of the silicon column array of square arrangement.Both certain arrangement modes are only preferred embodiment, can also be set
Other modes are put, are not limited herein.
The embodiment of the present application additionally provides the 6th kind of anti-icing method of surface hydrophobicity, is prevented in above-mentioned 5th kind of surface hydrophobicity
It is described to be in silicon chip surface making silicon column array on the basis of the method for ice：
The silicon column array with rectangular shape or cylindrical shape is made in the silicon chip surface.It should be noted that
Silicon column array of different shapes can be just made using different mask plates.
The embodiment of the present application additionally provides the 7th kind of anti-icing method of surface hydrophobicity, is prevented in above-mentioned 6th kind of surface hydrophobicity
It is described to be in silicon chip surface making silicon column array on the basis of the method for ice：
In the silicon chip surface making section length of side be 10 microns to 14 microns and edge spacing is 28 microns to 32 microns
Cuboid silicon column array, or the silicon chip surface make diameter of section be 10 microns to 14 microns and edge spacing be 28
The cylinder silicon column array of micron to 32 microns.Using the silicon column array with these sizes and spacing, enable to hydrophobic anti-
Ice effect is more preferable.
The embodiment of the present application additionally provides the 7th kind of anti-icing method of surface hydrophobicity, is prevented in above-mentioned 5th kind of surface hydrophobicity
It is described to be in silicon chip surface making silicon column array on the basis of the method for ice：
The silicon chip surface make rounded projections arranged diameter of section be 10 microns to 14 microns and edge spacing be 46
Micron to 50 microns of cylindrical shape silicon column array.It can be played more preferably using the silicon column array with this size range
Hydrophobic anti-icing effect.
The 9th kind of anti-icing method of surface hydrophobicity provided by the embodiments of the present application, is anti-icing in any of the above-described kind of surface hydrophobicity
Method on the basis of, it is described silicon chip surface make silicon column array be：
The silicon column array that altitude range is 42 microns to 56 microns is made in the silicon chip surface.
By foregoing description, the anti-icing method of above-mentioned various surface hydrophobicities provided by the embodiments of the present application, due to elder generation
Silicon column array is made in silicon chip surface, then makes black silicon on the surface of the silicon column array and interval location, which forms
One species two level micro-nano structure, has excellent effect, processing technology is simple, Neng Goujian in terms of Solid Surface Adhesion is reduced
Change hydrophobic anti-icing forming process, and cost is low, it is efficient.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide scope caused.
Claims (1)
1. a kind of anti-icing method of surface hydrophobicity, it is characterised in that including：
Silicon column array is made in silicon chip surface, is included in the surface resist coating of the silicon chip, is set on the photoresist top
Mask plate, and photoetching and development are carried out to the photoresist, mask pattern is formed, to the silicon chip after formation mask pattern
Perform etching, form silicon column array, remove the photoresist and clean；
Silicon chip with the silicon column array is put into sense coupling equipment and is performed etching, in the silicon column
The surface of array and interval location form black silicon；
The silicon chip after described pair of formation mask pattern performs etching, and forming silicon column array includes：
Carry out the first time etching of preset time；
Measure the depth of the silicon column array formed；
Using the preset time and the depth of the silicon column array, etch rate is calculated；
The time of second of etching is calculated using the etch rate, until forming the silicon column array with predetermined depth；
It is described to be in silicon chip surface making silicon column array：
The silicon chip surface make square arrangement altitude range be 42 microns to 56 microns, the section length of side be 10 microns to 14
Micron and the cuboid silicon column array that edge spacing is 28 microns to 32 microns, or make square arrangement in the silicon chip surface
Diameter of section be 10 microns to 14 microns and cylinder silicon column array that edge spacing is 28 microns to 32 microns, or triangle
The silicon column battle array for the cylindrical shape that the diameter of section of arrangement is 10 microns to 14 microns and edge spacing is 46 microns to 50 microns
Row.
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| CN111704103B (en) * | 2020-05-19 | 2022-12-09 | 西安交通大学 | Preparation method of multi-scale structure super-hydrophobic surface |
Citations (1)
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| CN103594555A (en) * | 2013-11-08 | 2014-02-19 | 无锡英普林纳米科技有限公司 | Preparation method for black silicon material with self-cleaning function |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594555A (en) * | 2013-11-08 | 2014-02-19 | 无锡英普林纳米科技有限公司 | Preparation method for black silicon material with self-cleaning function |
Non-Patent Citations (3)
| Title |
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| "Drop Impact Characteristics and Structure Effects of Hydrophobic Surfaces with Micro- and/or Nanoscaled Structures";Hyungmo Kim等;《American Chemical Society》;20120701(第28期);第11250-11257页 * |
| "Reducing ice adhesion by hierarchical micro-nano-pillar";Yang He等;《Applied Surface Science》;20140329(第305期);第589-595页 * |
| Fabrication of micro/nano dual-scale structures by improved deep reactive ion etching;Guangyi Sun等;《JOURNAL OF MICROMECHANICS AND MICROENGINEERING》;20100614;第1-7页 * |
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