CN106003445A - Main wire guide roller for cutting silicon wafer through electroplating wire - Google Patents
Main wire guide roller for cutting silicon wafer through electroplating wire Download PDFInfo
- Publication number
- CN106003445A CN106003445A CN201610533913.9A CN201610533913A CN106003445A CN 106003445 A CN106003445 A CN 106003445A CN 201610533913 A CN201610533913 A CN 201610533913A CN 106003445 A CN106003445 A CN 106003445A
- Authority
- CN
- China
- Prior art keywords
- main traverse
- line roller
- guide roller
- traverse line
- silicon chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005520 cutting process Methods 0.000 title claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 31
- 239000010703 silicon Substances 0.000 title claims abstract description 31
- 238000009713 electroplating Methods 0.000 title abstract 4
- 239000000463 material Substances 0.000 claims abstract description 6
- 229920002635 polyurethane Polymers 0.000 claims abstract description 5
- 239000004814 polyurethane Substances 0.000 claims abstract description 5
- 238000007747 plating Methods 0.000 claims description 32
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000010355 oscillation Effects 0.000 claims description 4
- 230000000284 resting effect Effects 0.000 claims description 3
- 238000001816 cooling Methods 0.000 abstract description 5
- 238000003754 machining Methods 0.000 abstract description 5
- 239000000110 cooling liquid Substances 0.000 abstract 1
- 238000007599 discharging Methods 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
- 239000002699 waste material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 9
- 229910000831 Steel Inorganic materials 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 239000002826 coolant Substances 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000010431 corundum Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- CVOFKRWYWCSDMA-UHFFFAOYSA-N 2-chloro-n-(2,6-diethylphenyl)-n-(methoxymethyl)acetamide;2,6-dinitro-n,n-dipropyl-4-(trifluoromethyl)aniline Chemical compound CCC1=CC=CC(CC)=C1N(COC)C(=O)CCl.CCCN(CCC)C1=C([N+]([O-])=O)C=C(C(F)(F)F)C=C1[N+]([O-])=O CVOFKRWYWCSDMA-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses a main wire guide roller for cutting a silicon wafer through an electroplating wire. The surface of each main wire guide roller body is coated with a polyurethane wear-resisting material, and concentric circle V-shaped grooves corresponding to the target thickness of the silicon wafer are carved. The electroplating wire is wound around the pair of main wire guide roller bodies in a reciprocating manner. The axes of the pair of main wire guide roller bodies deviate from the axes of rotating shafts by 100 micrometers correspondingly, and therefore the main wire guide roller bodies are in an eccentric wheel state when rotating, and the surface runout value is 200 micrometers. High-spot positions of the pair of main wire guide roller bodies in a static state form 180 degrees. According to the main wire guide roller for cutting the silicon wafer through the electroplating wire, the discharging capacity of cut waste silicon dust and the cooling performance of cooling liquid can be improved, the cutting capacity of carborundum is improved, finally machining efficiency is improved, and the surface quality of the silicon wafer is improved.
Description
Technical field
The invention belongs to silicon chip cutting technique field, particularly relate to a kind of plating line cutting silicon chip main traverse line roller.
Background technology
During silicon chip linear cutter, needing to be wrapped in plating line on main traverse line roller (hereinafter referred to as home roll), generally, home roll is a pair concentric cylinder, Surface coating polyurethane wear resistant material, and is carved with the concentric circular V groove corresponding with silicon chip target thickness.In common technology contents, continue the free abrasive cutting requirement to home roll in the period, it is stipulated that surface of revolution is beated ＜ 20 μm, it is therefore an objective to the stationarity of steel wire gauze when keeping running up, prevent steel wire instability from shaking the exception caused.
Progress along with plating line cutting technique, on the one hand, process time quickly shortens, unit interval feeding distance increases, it is meant that the increase of cutting processing capacity in the unit interval.On the other hand, in order to reduce cutting kerf loss, steel wire diameter and diamond particle diameter are all in rapid drop.After both combine, cutting operation faciostenosis and workload are big, cause scope of operation coolant to enter difficulty, scope of operation temperature raises, it is more difficult that cutting scrap is discharged, and then has had influence on the cutting power of Surface machining of silicon wafer quality and emery grit, needs to develop new technology and improves.
Having correlation technique at present to release, the slightly vibrations that the mode that mainly have employed loading ultrasound wave produces ＞ 20HZ to make plating line realize solving the purpose of above-mentioned two problems, but need to put into electrical equipment, and maintenance and reliability are the highest.
Summary of the invention
Present invention aim at the defect for existing main traverse line roller, a kind of discharge ability that can improve cutting useless silicon bits and the cooling performance of coolant are provided, improve corundum cutting power, finally improve working (machining) efficiency, improve the plating line cutting silicon chip main traverse line roller of silicon chip surface quality.
The present invention for achieving the above object, adopts the following technical scheme that
A kind of plating line cutting silicon chip main traverse line roller, plating line is back and forth wrapped in a pair main traverse line roller, it is characterised in that: at least axis deviation of axle center and rotary shaft of in the pair of main traverse line roller.
It is further characterized by the described main traverse line roll shaft heart and rotary shaft axle center distance is 80-120 μm.
Preferred: the axle center of the pair of main traverse line roller all with the axis deviation of rotary shaft.
High point orientation under the pair of main traverse line roller resting state forms 180 °.
It is 25-30 time/s that the rotation of described main traverse line roller causes plating line longitudinal oscillation, the hunting frequency of described plating line.
It is further characterized in that further: described main traverse line roller Surface coating has polyurethane wear resistant material, and is carved with the concentric circular V groove corresponding with silicon chip target thickness.
Described main traverse line roller diameter is 230mm.
The invention has the advantages that:
1, the cheap easy realization of process costs, only need to install the conical surface home roll and carry out eccentric processing again, and the least cost is transformed, follow-up without putting into again.
2, reliability is high, owing to belonging to hardware modification, confirms high point position when only need to install home roll every time, can non-maintaining continuous use.
3, can significantly improve cutting effect, after tested, compare common process home roll, Surface machining of silicon wafer stria value declines 1 μm, and TTV value declines 2 μm, and seamed edge breakage rate declines 0.2%.
4, additional materials demand and garbage are not produced.
The present invention can improve discharge ability and the cooling performance of coolant of cutting useless silicon bits, improves corundum cutting power, finally improves working (machining) efficiency, improves the plating line cutting silicon chip main traverse line roller of silicon chip surface quality.
Accompanying drawing explanation
Fig. 1 is existing common process main traverse line roller installment state schematic diagram.
Fig. 2 is main traverse line roller installment state schematic diagram of the present invention.
Fig. 3,4 be main traverse line roller of the present invention use time, the running status schematic diagram of plating line.
Detailed description of the invention
As shown in Figure 1, under existing home roll process conditions, the circumference of main traverse line roller 1 is concentric circular with rotary shaft 4 axle center of main traverse line roller, surface run_out value ＜ 20 μm, plating line 2 gauze tension force forms equilibrium,transient state with silicon material 3 feed pressure, and plating line 2 is close to silicon material 3 and is processed the round operation of kerf (see figure 1) quick and stable, and the gap between plating line 2 and the scope of operation is less than 5 μm (less than corundum particle diameter average), cutting liquid is difficult to enter in a large number, chip removal and cooling difficulty.
As in Figure 2-4, a kind of plating line cutting silicon chip main traverse line roller 1, Surface coating has polyurethane wear resistant material 5, and is carved with the concentric circular V groove corresponding with silicon chip target thickness.Plating line 2 is back and forth wrapped on a pair main traverse line roller 1, the axle center of the pair of main traverse line roller 1 all with axis deviation 100 μm of rotary shaft 4 so that being eccentric state when main traverse line roller 1 rotates, surface run_out value is 200 μm.High point orientation under a pair main traverse line roller 1 resting state forms 180 °.
As shown in Figure 3,4, when carrying out silicon chip cutting operation, all there is following dynamic process in every steel wire in plating line gauze: single plating line is in the part on the upside of main traverse line roller, in addition to by the space rate of the 20m/s set to side operation cutting, also addition of left and right end main traverse line roller fulcrum to beat the plating line longitudinal oscillation caused, unilateral fulcrum jumping frequency rate is 27.6 times/s, and end points amplitude is equal with the surface run_out of this side main traverse line roller.Along with the longitudinal oscillation of plating line, cutting liquid can conveniently enter the gap between plating line and the scope of operation, it is simple to chip removal and cooling.
Claims (7)
1. a plating line cutting silicon chip main traverse line roller, plating line is back and forth wrapped in a pair main traverse line roller, it is characterised in that: at least axis deviation of axle center and rotary shaft of in the pair of main traverse line roller.
Plating line the most according to claim 1 cutting silicon chip main traverse line roller, it is characterised in that: the described main traverse line roll shaft heart and rotary shaft axle center distance are 80-120 μm.
Plating line the most according to claim 1 and 2 cutting silicon chip main traverse line roller, it is characterised in that: the axle center of the pair of main traverse line roller all with the axis deviation of rotary shaft.
Plating line the most according to claim 3 cutting silicon chip main traverse line roller, it is characterised in that: the high point orientation under the pair of main traverse line roller resting state forms 180 °.
Plating line the most according to claim 4 cutting silicon chip main traverse line roller, it is characterised in that: it is 25-30 time/s that the rotation of described main traverse line roller causes plating line longitudinal oscillation, the hunting frequency of described plating line.
Plating line the most according to claim 1 and 2 cutting silicon chip main traverse line roller, it is characterised in that: described main traverse line roller Surface coating has polyurethane wear resistant material, and is carved with the concentric circular V groove corresponding with silicon chip target thickness.
Plating line the most according to claim 6 cutting silicon chip main traverse line roller, it is characterised in that: described main traverse line roller diameter is 230mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610533913.9A CN106003445A (en) | 2016-07-07 | 2016-07-07 | Main wire guide roller for cutting silicon wafer through electroplating wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610533913.9A CN106003445A (en) | 2016-07-07 | 2016-07-07 | Main wire guide roller for cutting silicon wafer through electroplating wire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106003445A true CN106003445A (en) | 2016-10-12 |
Family
ID=57108229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610533913.9A Pending CN106003445A (en) | 2016-07-07 | 2016-07-07 | Main wire guide roller for cutting silicon wafer through electroplating wire |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106003445A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08229800A (en) * | 1994-12-28 | 1996-09-10 | Nippei Toyama Corp | Wiree saw device |
| CN103042613A (en) * | 2011-10-13 | 2013-04-17 | 太阳世界创新有限公司 | Wire-rod guiding roller |
| CN202934715U (en) * | 2012-10-12 | 2013-05-15 | 湖南宇晶机器股份有限公司 | Installing device of multi-wire cutting machine transition rollers |
| CN103552166A (en) * | 2013-09-30 | 2014-02-05 | 洛阳鸿泰半导体有限公司 | Device for adjusting crystal-orientation deviation degree of silicon rod |
| CN205969544U (en) * | 2016-07-07 | 2017-02-22 | 无锡隆基硅材料有限公司 | Electricity plate wire cutting main traverse line roller for silicon chip |
-
2016
- 2016-07-07 CN CN201610533913.9A patent/CN106003445A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08229800A (en) * | 1994-12-28 | 1996-09-10 | Nippei Toyama Corp | Wiree saw device |
| CN103042613A (en) * | 2011-10-13 | 2013-04-17 | 太阳世界创新有限公司 | Wire-rod guiding roller |
| CN202934715U (en) * | 2012-10-12 | 2013-05-15 | 湖南宇晶机器股份有限公司 | Installing device of multi-wire cutting machine transition rollers |
| CN103552166A (en) * | 2013-09-30 | 2014-02-05 | 洛阳鸿泰半导体有限公司 | Device for adjusting crystal-orientation deviation degree of silicon rod |
| CN205969544U (en) * | 2016-07-07 | 2017-02-22 | 无锡隆基硅材料有限公司 | Electricity plate wire cutting main traverse line roller for silicon chip |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161012 |