CN105991008A - High-potential self energy taking system suitable for IGBT serial application mode - Google Patents

Abstract

The invention provides a high-potential self energy taking system suitable for an IGBT serial application mode. The system comprises n self energy taking units in serial connection; and each self energy taking unit comprises an IGBT, a feedforward energy taking circuit, a DC-DC energy taking converter and a GU drive board, wherein the feedforward energy taking circuit is connected in parallel between the drain electrode and the grid electrode of the IGBT, and connected to the GU drive board via the DC-DC energy taking converter, and the output end of the GU drive board is connected to the grid electrode of the IGBT. The system can obtain electric energy when the bus voltage at the DC side of the converter is increased from zero to a relatively low voltage level, stable electric energy can be obtained when the converter is locked for a long time, and sufficient electric energy can be also obtained when the converter works in a continuous chopping state.

Description

A kind of high potential self-energizing system being applicable under IGBT series connection application model

Technical field

The present invention relates to a kind of self-energizing system, the high potential being specifically related under a kind of IGBT of being applicable to series connection application model is asked for Can system.

Background technology

Along with the power system demand to Power Electronic Technique, the research of high-voltage and high-power power electronic technology becomes current power train An important branch in system research.But, to force down owing to the single tube of power electronic devices is resistance to, little being difficult to of capacity directly applies to electricity In Force system.Therefore, high-voltage and high-power power electronic device often uses following four mode:

(1) output of multiple low pressure small power electric Source Con-verters is obtained the big merit of high pressure by transformator multiplex superimposing technique Rate exports.

(2) ac output end at low pressure small power electric Source Con-verters uses transformator to carry out buck, intermediate link respectively Still low pressure inverter is used.

(3) main circuit topology that many level export is used.

(4) the two level topologys that power electronic devices is directly connected.

First kind of way need to use transformator；The second way not only needs to use transformator, and exist intermediate link electric current big, The problems such as efficiency is low, reliability is low；The third mode is the main circuit topology that high-power occasion commonly uses at present.2002 Year German scholar Marquardt et al. disclose a kind of modularization multi-level converter (Modular Multilevel Converter, It is called for short MMC) topology, this technology forms by single-phase semi-bridge that a series of structures are identical is unit cascaded.Each single-phase semi-bridge Being referred to as submodule, the degree of modularity is high, convenient for installation and maintenance, but exists and self cannot cut off direct fault current and along with electricity The raising of pressure grade, the complexity of many level main circuit topological structure improves rapidly, uses number of devices to increase, and controls difficulty and increases Greatly, the shortcoming such as reliability reduction.4th kind of mode two level main circuit topology has that simple in construction, device usage quantity be few, control System is simple, reliability high.Although abroad there being research institution to carry out the research of IGBT serial connection technology, but it is rarely reported. Up to now, only ABB AB of business application is really realized.

The difficult point of high pressure IGBT series connection application is active Pressure and Control technology, and high potential self-energizing technology is to realize actively all pressing The prerequisite controlled.Under conditions of high-voltage great-current IGBT series connection application how from primary equipment acquirement electric energy itself be to Closing important, its application conditions has a following principal character: one, by high pressure IGBT three-phase H bridge in series static three Under phase barring condition, each high pressure IGBT valve terminal voltage is DC voltage；Its two, the three-phase H in series by high pressure IGBT Bridge is under static three-phase barring condition, and the size of static state voltage equipoise loop current is affected relatively big by the size of IGBT valve terminal voltage, when IGBT valve terminal voltage can export tens milliamperes of electric currents when being raised near rated voltage condition, and at the relatively low bar of IGBT valve terminal voltage Under part, static loop electric current only has several milliampere, it is impossible to obtain enough electric energy in the case of IGBT valve terminal voltage is relatively low to driving Galvanic electricity road use, thus can not realize DC bus-bar voltage relatively low in the case of, it is achieved to series IGBT composition converter valve The duty of body detects and protects, and is unfavorable for the safety and reliability of raising system；Three, by high pressure IGBT string The three-phase H bridge that connection is constituted, under static three-phase barring condition, is zero by the dynamic voltage balancing loop current that resistance capacitance is in series. By high pressure IGBT three-phase H bridge in series under the conditions of copped wave, the dynamic voltage balancing loop in series by resistance capacitance produces Electric current.

Based on above technical characteristic, carry out high potential self-energizing side at high pressure IGBT static loop and capacitance-resistance Dynamic Absorption loop Case is infeasible or relatively difficult.

Summary of the invention

In order to overcome above-mentioned the deficiencies in the prior art, the present invention provides a kind of high potential being applicable under IGBT series connection application model Self-energizing system, it is possible to achieve risen to relatively low voltage levvl high potential self-energizing system by zero in Converter DC-side busbar voltage System can obtain electric energy, can also obtain stable electric energy and be operated in even at inverter under conditions of the long-term locking of inverter The electric energy of abundance can also be obtained under continuous copped wave duty.

In order to realize foregoing invention purpose, the present invention adopts the following technical scheme that:

The present invention provides a kind of high potential self-energizing system being applicable under IGBT series connection application model, and described system includes n The self-energizing unit being sequentially connected in series；Described self-energizing unit include IGBT, feedforward take can circuit, DC-DC take can changer and GU drives plate, described feedforward take can circuit in parallel between the drain and gate of IGBT, and by DC-DC take energy changer Connecting GU and drive plate, described GU drives the grid that the outfan of plate connects IGBT.

Described feedforward takes and can include sustained diode, static voltage sharing Rs, dynamic antivibration loop and take energy diode V by circuit； Described dynamic antivibration loop includes the Dynamic Absorption electric capacity Cd and Dynamic Absorption resistance Rd of series connection.

The anode of described sustained diode connects the source electrode of IGBT, and its negative electrode connects the drain electrode of IGBT；Described static state voltage equipoise Resistance Rs and dynamic antivibration loop are all connected in parallel on the two ends of sustained diode；The described anode taking energy diode V connects afterflow The negative electrode of diode D, its negative electrode connects DC-DC and takes energy changer.

Described DC-DC take can changer include m connect take energy converter unit；

Described taking can include taking energy electric capacity Cs, taking energy subelement T and current-sharing diode Z by converter unit；

Described take can electric capacity Cs with take can subelement T in parallel, described in take can subelement T by current-sharing diode Z connection GU Drive plate, drive plate to power for GU.

Described taking can include that the input taking energy subelement T is taked to recommend series system by subelement T, and its outfan uses current-sharing two Pole pipe Z parallel way.

Described take can subelement T include start-up circuit, control circuit, linear isolation transformator B, switch mosfet pipe Q, Commutation diode Vd and filter capacitor CL；

Described start-up circuit connects the grid of switch mosfet pipe Q by control circuit, and described start-up circuit is simultaneously connected with line The primary coil of sexual isolation transformator B, the other end of described primary coil connects the drain electrode of switch mosfet pipe Q, described The source class ground connection of switch mosfet pipe Q；Described linear isolation transformator B secondary coil one end ground connection, the other end connects rectification The positive pole of diode Vd, the negative pole of commutation diode Vd passes through filter capacitor CL ground connection.

The withstanding voltage of described sustained diode and carrying electric current use V respectively_{AK_D}And I_{C_D}Represent, and meet:

$\left\{\begin{array}{c}{V}_{\mathrm{AK}\_D}\≥V_{\mathrm{CES}\_\mathrm{IGBT}}\\ I_{C\_D}\≥I_{C\_\mathrm{IGBT}}\end{array}\right.$

Wherein, V_{CES_IGBT}For IGBT withstanding voltage, I_{C_IGBT}Electric current is carried for IGBT.

The resistance of described static voltage sharing Rs meets:

${R_s}^{\′}\≤\frac{U_m}{n\×I_{\mathrm{CES}}}$

Wherein, R_s' for the resistance of static voltage sharing Rs, U_mThe total voltage value tolerated by IGBT series connection, I_CESFor IGBT Drain current.

The capacitance of described Dynamic Absorption electric capacity Cd meets:

${C_d}^{\′}\≥\frac{I_L^2\×L_{\mathrm{\σ}}}{\mathrm{\Δ}{U}^2}$

Wherein, C_d' for the capacitance of Dynamic Absorption electric capacity Cd, I_LFor load current, L_σFor the total leakage inductance in dynamic antivibration loop, Δ U For voltage overshoot limit value；

The power of Dynamic Absorption resistance Rd meets:

$P_{R_d}\≥f\×{C_d}^{\′}\×U_{C_d}^2$

Wherein,For the power of Dynamic Absorption resistance Rd, f is switching frequency,Terminal voltage for Dynamic Absorption electric capacity Cd.

The described withstanding voltage taking energy diode V meets:

$U_{V_{\mathrm{AK}}}\≥V_{\mathrm{CES}\_\mathrm{IGBT}}$

Wherein,For taking the withstanding voltage of energy diode V, V_{CES_IGBT}For IGBT withstanding voltage；

The capacitance taking energy electric capacity Cs meets:

${C_S}^{\′}\≥\frac{2\×P_S\×\mathrm{\ΔT}}{\mathrm{\Δ}{U}_{C_S}^2}$

Wherein, C_S' for taking the capacitance of energy electric capacity Cs, P_SDriving plate total losses for GU, Δ T is that photoelectricity triggered between the burst length Every,For taking the Voltage Drop maximum permissible value of energy electric capacity Cs.

Compared with prior art, the beneficial effects of the present invention is:

1), high potential self-energizing resolution circuitry succinct, once take can loop area little, thus IGBT can be overcome at high-frequency PWM Electromagnetic disturbance problem under environment；

2), high potential self-energizing scheme is not limited by high voltage applications field, is also the essential strategy of high-voltage dc transmission electrical domain；

3), without other auxiliary power supply, floor space is little, reliability is high, it is achieved thereby that compact designed；

4), can be as the technological means of suppression IGBT series connection overvoltage.

Accompanying drawing explanation

Fig. 1 is the high potential self-energizing system construction drawing being applicable under IGBT series connection application model in the embodiment of the present invention.

Detailed description of the invention

Below in conjunction with the accompanying drawings the present invention is described in further detail.

The present invention takes energy changer for basic fundamental means with DC-DC, it is achieved high pressure IGBT driving under series connection application conditions The energy supply of control circuit.Under IGBT series connection application model, between IGBT source-drain electrode, directly obtain electric energy for IGBT The method of drive circuit energy is referred to as high potential self-energizing, under IGBT series connection application model, and the skill of required special solution Art key point is high potential self-energizing.System backbone network is by n (n ＞ 2) individual high pressure in series for high-voltage great-current IGBT Brachium pontis, in order in the realization of higher voltage field concrete function.The gate pole of each high pressure IGBT controls, monitors and defencive function Driven plate to complete by GU, and the energy offer that GU drives plate is by directly obtaining between respective high pressure IGBT source-drain electrode. Under IGBT is off status condition, DC voltage can be charged as GU driving plate to taking energy electric capacity Cs by diode V by taking Energy is provided；Under the conditions of IGBT is in the conduction state, takes and can be in anti-phase cut-off state by diode V, be stored in and take energy electricity The electric energy holding Cs is that GU drives plate to power.When DC bus-bar voltage is gradually increasing and the most all series IGBTs are in closing Lock status, energy can charge to taking energy electric capacity Cs and drive plate feeding electric energy to GU by diode V by taking.It is quiet at this moment State duty, series IGBT is all pressed and is determined by static voltage sharing Rs.Owing to busbar voltage is DC quantity, so by connecting Dynamic Absorption electric capacity Cd and the Dynamic Absorption loop that is composed in series of Dynamic Absorption resistance Rd inoperative to IGBT static state voltage equipoise. Under IGBT is operated in the PWM state of 1kHz, between IGBT is in quick alternate conduction and turns off, therefore taking can electric capacity Cs both end voltage changes little, and on the one hand this guarantee to take and can be enough to tackle GU driving plate triggering IGBT by the energy stored by electric capacity Cs Required energy requirement；On the other hand take and IGBT dynamic voltage balancing can will not be produced shadow in diode V loop with taking by electric capacity Cs Ring.Additionally due to take the existence of energy electric capacity Cs, when IGBT is transitioned into shutoff by conducting, spike can be absorbed to a certain extent Overvoltage.Thus there is the effect got twice the result with half the effort.

The present invention provides a kind of high potential self-energizing system being applicable under IGBT series connection application model, and described system includes n The self-energizing unit being sequentially connected in series；Described self-energizing unit include IGBT, feedforward take can circuit, DC-DC take can changer and GU drives plate, described feedforward take can circuit in parallel between the drain and gate of IGBT, and by DC-DC take energy changer Connecting GU and drive plate, described GU drives the grid that the outfan of plate connects IGBT.

Described feedforward takes and can include sustained diode, static voltage sharing Rs, dynamic antivibration loop and take energy diode V by circuit； Described dynamic antivibration loop includes the Dynamic Absorption electric capacity Cd and Dynamic Absorption resistance Rd of series connection.

The anode of described sustained diode connects the source electrode of IGBT, and its negative electrode connects the drain electrode of IGBT；Described static state voltage equipoise Resistance Rs and dynamic antivibration loop are all connected in parallel on the two ends of sustained diode；The described anode taking energy diode V connects afterflow The negative electrode of diode D, its negative electrode connects DC-DC and takes energy changer.

Described DC-DC take can changer include m connect take energy converter unit；

Described taking can include taking energy electric capacity Cs, taking energy subelement T and current-sharing diode Z by converter unit；

Described take can electric capacity Cs with take can subelement T in parallel, described in take can subelement T by current-sharing diode Z connection GU Drive plate, drive plate to power for GU.

Described taking can include that the input taking energy subelement T is taked to recommend series system by subelement T, and its outfan uses current-sharing two Pole pipe Z parallel way.

Described take can subelement T include start-up circuit, control circuit, linear isolation transformator B, switch mosfet pipe Q, Commutation diode Vd and filter capacitor CL；

Described start-up circuit connects the grid of switch mosfet pipe Q by control circuit, and described start-up circuit is simultaneously connected with line The primary coil of sexual isolation transformator B, the other end of described primary coil connects the drain electrode of switch mosfet pipe Q, described The source class ground connection of switch mosfet pipe Q；Described linear isolation transformator B secondary coil one end ground connection, the other end connects rectification The positive pole of diode Vd, the negative pole of commutation diode Vd passes through filter capacitor CL ground connection.

The withstanding voltage of described sustained diode and carrying electric current use V respectively_{AK_D}And I_{C_D}Represent, and meet:

$\left\{\begin{array}{c}{V}_{\mathrm{AK}\_D}\≥V_{\mathrm{CES}\_\mathrm{IGBT}}\\ I_{C\_D}\≥I_{C\_\mathrm{IGBT}}\end{array}\right.$

Wherein, V_{CES_IGBT}For IGBT withstanding voltage, I_{C_IGBT}Electric current is carried for IGBT.

The resistance of described static voltage sharing Rs meets:

${R_s}^{\′}\≤\frac{U_m}{n\×I_{\mathrm{CES}}}$

Wherein, R_s' for the resistance of static voltage sharing Rs, U_mThe total voltage value tolerated by IGBT series connection, I_CESFor IGBT Drain current.

The capacitance of described Dynamic Absorption electric capacity Cd meets:

${C_d}^{\′}\≥\frac{I_L^2\×L_{\mathrm{\σ}}}{\mathrm{\Δ}{U}^2}$

Wherein, C_d' for the capacitance of Dynamic Absorption electric capacity Cd, I_LFor load current, L_σFor the total leakage inductance in dynamic antivibration loop, Δ U For voltage overshoot limit value；

The power of Dynamic Absorption resistance Rd meets:

$P_{R_d}\≥f\×{C_d}^{\′}\×U_{C_d}^2$

Wherein,For the power of Dynamic Absorption resistance Rd, f is switching frequency,Terminal voltage for Dynamic Absorption electric capacity Cd.

The described withstanding voltage taking energy diode V meets:

$U_{V_{\mathrm{AK}}}\≥V_{\mathrm{CES}\_\mathrm{IGBT}}$

Wherein,For taking the withstanding voltage of energy diode V, V_{CES_IGBT}For IGBT withstanding voltage；

The capacitance taking energy electric capacity Cs meets:

${C_S}^{\′}\≥\frac{2\×P_S\×\mathrm{\ΔT}}{\mathrm{\Δ}{U}_{C_S}^2}$

Wherein, C_S' for taking the capacitance of energy electric capacity Cs, P_SDriving plate total losses for GU, Δ T is that photoelectricity triggered between the burst length Every,For taking the Voltage Drop maximum permissible value of energy electric capacity Cs.

1) power electronics valve connected mode is: upper brachium pontis is 21 strings/phase, and lower brachium pontis is 21 strings/phase.

2) triggering mode: photoelectricity triggering mode；

3) IGBT parameter is shown in Table 1:

Table 1

4) sustained diode parameter is shown in Table 2:

Table 2

5) static voltage sharing Rs:25K/400W, water cooling is dispelled the heat；

6) dynamic voltage balancing resistance Rd:10/400W, water cooling is dispelled the heat；

7) dynamic voltage balancing electric capacity Cdn:0.15uf/2000V, water cooling is dispelled the heat；

8) taking can diode V:DSEI60-06A；

9) energy electric capacity Cs is taken: be equivalent to 100uf/2000V；

10) DC-DC takes energy changer: DC40-2000V/ ± 15V.

Finally should be noted that: above example only in order to illustrate that technical scheme is not intended to limit, art Those of ordinary skill still the detailed description of the invention of the present invention can be modified or equivalent with reference to above-described embodiment, These are without departing from any amendment of spirit and scope of the invention or equivalent, the claim of the present invention all awaited the reply in application Within protection domain.

Claims (10)

1. the high potential self-energizing system being applicable under IGBT series connection application model, it is characterised in that: described system includes N the self-energizing unit being sequentially connected in series；Described self-energizing unit includes that IGBT, feedforward take energy circuit, DC-DC takes and can convert Device and GU drive plate, described feedforward take can circuit in parallel between the drain and gate of IGBT, and take can become by DC-DC Parallel operation connects GU and drives plate, and described GU drives the grid that the outfan of plate connects IGBT.

The high potential self-energizing system being applicable under IGBT series connection application model the most according to claim 1, its feature exists In: described feedforward takes and can include sustained diode, static voltage sharing Rs, dynamic antivibration loop and take energy diode V by circuit； Described dynamic antivibration loop includes the Dynamic Absorption electric capacity Cd and Dynamic Absorption resistance Rd of series connection.

The high potential self-energizing system being applicable under IGBT series connection application model the most according to claim 2, its feature exists In: the anode of described sustained diode connects the source electrode of IGBT, and its negative electrode connects the drain electrode of IGBT；Described static state voltage equipoise Resistance Rs and dynamic antivibration loop are all connected in parallel on the two ends of sustained diode；The described anode taking energy diode V connects afterflow The negative electrode of diode D, its negative electrode connects DC-DC and takes energy changer.

The high potential self-energizing system being applicable under IGBT series connection application model the most according to claim 1, its feature exists In: described DC-DC take can changer include m connect take energy converter unit；

Described taking can include taking energy electric capacity Cs, taking energy subelement T and current-sharing diode Z by converter unit；

Described take can electric capacity Cs with take can subelement T in parallel, described in take can subelement T by current-sharing diode Z connection GU Drive plate, drive plate to power for GU.

The high potential self-energizing system being applicable under IGBT series connection application model the most according to claim 4, its feature exists In: described in take and can include taking and can the input of subelement T take to recommend series system by subelement T, its outfan uses current-sharing two Pole pipe Z parallel way.

The high potential self-energizing system being applicable under IGBT series connection application model the most according to claim 4, its feature exists In: described in take can subelement T include start-up circuit, control circuit, linear isolation transformator B, switch mosfet pipe Q, Commutation diode Vd and filter capacitor CL；

Described start-up circuit connects the grid of switch mosfet pipe Q by control circuit, and described start-up circuit is simultaneously connected with line The primary coil of sexual isolation transformator B, the other end of described primary coil connects the drain electrode of switch mosfet pipe Q, described The source class ground connection of switch mosfet pipe Q；Described linear isolation transformator B secondary coil one end ground connection, the other end connects rectification The positive pole of diode Vd, the negative pole of commutation diode Vd passes through filter capacitor CL ground connection.

The high potential self-energizing system being applicable under IGBT series connection application model the most according to claim 2, its feature exists In: the withstanding voltage of described sustained diode and carrying electric current use V respectively_{AK_D}And I_{C_D}Represent, and meet:

$\left\{\begin{array}{c}{V}_{\mathrm{AK}\_D}\≥V_{\mathrm{CES}\_\mathrm{IGBT}}\\ I_{C\_D}\≥I_{C\_\mathrm{IGBT}}\end{array}\right.$

Wherein, V_{CES_IGBT}For IGBT withstanding voltage, I_{C_IGBT}Electric current is carried for IGBT.

The high potential self-energizing system being applicable under IGBT series connection application model the most according to claim 2, its feature exists In: the resistance of described static voltage sharing Rs meets:

${R_s}^{\′}\≤\frac{U_m}{n\×I_{\mathrm{CES}}}$

Wherein, R_s' for the resistance of static voltage sharing Rs, U_mThe total voltage value tolerated by IGBT series connection, I_CESFor IGBT Drain current.

The high potential self-energizing system being applicable under IGBT series connection application model the most according to claim 2, its feature exists In: the capacitance of described Dynamic Absorption electric capacity Cd meets:

${C_d}^{\′}\≥\frac{I_L^2\×L_{\mathrm{\σ}}}{{\mathrm{\ΔU}}^2}$

Wherein, C_d' for the capacitance of Dynamic Absorption electric capacity Cd, I_LFor load current, L_σFor the total leakage inductance in dynamic antivibration loop, Δ U For voltage overshoot limit value；

The power of Dynamic Absorption resistance Rd meets:

$P_{R_d}\≥f\×{C_d}^{\′}{U}_{C_d}^2$

Wherein,For the power of Dynamic Absorption resistance Rd, f is switching frequency,Terminal voltage for Dynamic Absorption electric capacity Cd.

The high potential self-energizing system being applicable under IGBT series connection application model the most according to claim 2, its feature exists In: described in take can diode V withstanding voltage meet:

$U_{V_{\mathrm{AK}}}\≥V_{\mathrm{CES}\_\mathrm{IGBT}}$

Wherein,For taking the withstanding voltage of energy diode V, V_{CES_IGBT}For IGBT withstanding voltage；

The capacitance taking energy electric capacity Cs meets:

${C_S}^{\′}\≥\frac{2\×P_S\×\mathrm{\ΔT}}{{\mathrm{\ΔU}}_{C_S}^2}$

Wherein, C_S' for taking the capacitance of energy electric capacity Cs, P_SDriving plate total losses for GU, Δ T is that photoelectricity triggered between the burst length Every,For taking the Voltage Drop maximum permissible value of energy electric capacity Cs.