CN105990507B - side-illuminated light emitting diode structure and manufacturing method thereof - Google Patents
side-illuminated light emitting diode structure and manufacturing method thereof Download PDFInfo
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- CN105990507B CN105990507B CN201610156784.6A CN201610156784A CN105990507B CN 105990507 B CN105990507 B CN 105990507B CN 201610156784 A CN201610156784 A CN 201610156784A CN 105990507 B CN105990507 B CN 105990507B
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- 239000000758 substrate Substances 0.000 claims abstract description 115
- 239000000084 colloidal system Substances 0.000 claims abstract description 49
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- 239000011248 coating agent Substances 0.000 claims description 29
- 238000000576 coating method Methods 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 28
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- 238000010586 diagram Methods 0.000 description 4
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
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- 238000004806 packaging method and process Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
Abstract
The invention provides a side-illuminated light-emitting diode structure and a manufacturing method thereof. The structure comprises a substrate, an electrode structure, a chip, a colloid layer and a fluorescent layer. The substrate has an upper surface and a lower surface opposite to each other and a side surface connecting the upper surface and the lower surface. The electrode structure at least comprises: the two first conductive parts are arranged on the upper surface of the substrate at intervals, the two second conductive parts are arranged on the lower surface of the substrate at intervals, and the two conductive holes vertically penetrate through the substrate and are arranged at intervals, the conductive holes are respectively connected with the first conductive parts and the second conductive parts, and the conductive holes are exposed on the side surface of the substrate. The chip is provided with a first surface and a second surface which are opposite, and the second surface of the chip is arranged on the two first conductive parts.
Description
Technical field
The present invention is about a kind of light emitting diode construction and its manufacturing method, especially a kind of side illuminated light emitting diode
Structure and its manufacturing method.
Background technique
Energy-saving and environment-friendly light emitting diode its using very extensive, in addition to the product being seen everywhere in daily life may be set
It is equipped with light emitting diode, such as general illumination, the display of computer or portable electronic product screen, billboard, artistic work and is answered
With also using light emitting diode as irradiation source, such as ultraviolet light-emitting diodes in some special manufacture of semiconductor
Applied to ultraviolet photoetching machine, production ultraviolet light lamp plate etc..
In general, light-emitting diode chip for backlight unit is arranged in ceramics or metal material is formed by substrate, and with colloid
Encapsulation and cladding light emitting diode form encapsulating structure, are directly exposed to keep chip quick in atmosphere to avoid light emitting diode
Aging.And after being electrically connected according to the encapsulating structure of light-emitting diode chip for backlight unit and outer member, light-emitting surface and connection outer member
Setting face relative position between the two, and straight-down negative (direct lighting) (i.e. light-emitting surface and setting face point can be divided into
Two planes that Wei Yu be not opposite) and side illuminated (edge lighting) light emitting diode construction (light-emitting surface and setting face for example in
Vertically) two kinds.Either which kind of structure, related dealer wish to develop the product that can maintain or even promote single structure invariably
Yield and electrical performance, and can also have high contraposition precision and packaging efficiency when assembling with outer member.And it can be with step
The manufacturing method of rapid simple and suitable volume production is best to be made as.
Summary of the invention
The invention relates to a kind of side illuminated light emitting diode construction and its manufacturing methods.It can by the design of embodiment
Make the electrode structure in the illuminated light emitting diode construction monomer of side with the side surface for being exposed to substrate, such as forms continuous conduction and connect
The conductive hole in face.
The present invention is to propose a kind of side illuminated light emitting diode, including a substrate, an electrode structure, a chip, colloid
Layer and a fluorescence coating.Substrate has an opposite upper surface and a lower surface and connects the side table of upper and lower surfaces
Face.Electrode structure includes at least: two the first conductive parts are separated by the upper surface that substrate is arranged in, two the second conductive parts are separated by and set
It sets and extends vertically through substrate in the lower surface of substrate and two conductive holes and be separated by setting, each conductive hole is separately connected the first conduction
Portion and the second conductive part, and conductive hole is exposed to the side surface of substrate.Chip has an opposite first surface and one second
Surface, and the second surface of chip is arranged on two first conductive parts.Colloid layer covers upper surface and the coating chip of substrate, glue
The top surface of body layer is the first surface for exposing chip and the first surface for trimming chip.Fluorescence coating is located at the top table of colloid layer
On face and cover the first surface of chip.
The present invention is to propose a kind of manufacturing method of side illuminated light emitting diode, including provide a substrate, and substrate has phase
Pair a upper surface and a lower surface, substrate include multiple monomer regions (unit regions).And it forms an electrode structure and exists
At substrate, wherein electrode structure corresponds at each monomer region and includes at least: two the first conductive parts, which are separated by, is arranged in substrate
Upper surface, two the second conductive parts are separated by the lower surface that substrate is arranged in；It extends vertically through substrate with two conductive holes and is separated by and set
It sets, each conductive hole is separately connected the first conductive part and the second conductive part.Separate and multiple chips be set on the upper surface of substrate,
In chip in each monomer region there is opposite a first surface and a second surface, and the second surface setting of chip is two
On first conductive part.It forms colloid material and on the upper surface of substrate and covers upper surface of base plate and chip.Remove part glue
For body material to form colloid layer, the top surface of colloid layer is the first table for exposing the first surface of chip and trimming chip
Face.A fluorescent material is coated in the top surface of colloid layer, to form the first of fluorescence coating covering chip in each monomer region
Surface.Colloid layer, conductive hole and substrate are cut, to form multiple isolated light emitting diodes, wherein each light emitting diode is led
There is junction to extend to the second conductive part from the first conductive part in electric hole, and those junctions are exposed to a side surface and and the side of substrate
Surface trims, and wherein side surface connects upper and lower surface.
More preferably understand to have to above-mentioned and other aspect of the invention, preferred embodiment is cited below particularly, and cooperates attached
Figure, is described in detail below:
Detailed description of the invention
Fig. 1 is single structural schematic diagram of the side illuminated light-emitting diode chip for backlight unit of one embodiment of the invention；
Fig. 2 is the top view of the side illuminated light-emitting diode chip for backlight unit of Fig. 1；
Fig. 3 is the sectional view of the side illuminated light-emitting diode chip for backlight unit shown by Fig. 2 section line A-A '；
Fig. 4 is the sectional view of the side illuminated light-emitting diode chip for backlight unit shown by Fig. 2 section line B-B '；
Fig. 5 A~5F is the manufacturing method of the side illuminated light emitting diode of one embodiment of the invention；
The electrode structure that Fig. 6 shows multiple light emitting diodes in one embodiment of the invention is matrix arrangement and corresponding two
The schematic diagram of the position in axially cutting road.
Description of symbols:
10: substrate；
101: upper surface；
102: lower surface；
103: edge；
104: side surface；
11: electrode structure；
111a, 111b: the first conductive part；
1113a, 1113b: the outer edge of the first conductive part；
112a, 112b: the second conductive part；
1130a, 1130b: the conductive hole before cutting；
113a, 113b: the conductive hole after cutting；
1110a, 1110b: the first edge of the first conductive part；
20: chip；
201: first surface；
202: second surface；
213: chip lateral margin；
30: colloidal materials；
31: colloid layer；
311: top surface；
313: colloid layer lateral margin；
40: fluorescent material；
41: fluorescence coating；
413: fluorescence coating lateral margin；
Ur: monomer region；
Lc: the length of conductive hole；
L1: the length of the top surface of colloid layer；
W1: the width of the top surface of colloid layer；
H0: the thickness of substrate；
Hp: the thickness of fluorescence coating；
H1: the thickness of the lower surface of fluorescence coating top surface to substrate；
WP: with the spacing in a line adjacent monomer region；
Lg: the shortest distance of two conductive holes in the adjacent monomer region of same row；
LT: the length of substrate before not cutting；
WT: the width of substrate before not cutting；
D1: the first cut direction；
D2: the second cut direction；
Cx: the first Cutting Road；
Cy: the second Cutting Road.
Specific embodiment
The embodiment of the present invention is to propose a kind of side illuminated light emitting diode and its manufacturing method.It is detailed referring to attached drawing below
Carefully describe state sample implementation of the invention.It is noted that structure and content that embodiment is proposed are used by way of example only, this
The range to be protected of invention is not limited only to the aspect.In embodiment same or similar label be to indicate it is identical or
Similar part.It is noted that the present invention not shows all possible embodiment.Spirit of the invention can not departed from
Structure is changed and modified in range, to meet needed for practical application.Therefore, not in other implementations proposed by the present invention
Aspect may also can be applied.Furthermore schema is the simplified content for clearly illustrating embodiment with benefit, the dimension scale in schema
Not drawn according to actual product equal proportion.Therefore, specification and diagramatic content are only described herein embodiment and are used, rather than as limit
The contracting scope of the present invention is used.
Fig. 1 is single structural schematic diagram of the side illuminated light-emitting diode chip for backlight unit of one embodiment of the invention.Fig. 2 is Fig. 1
Side illuminated light-emitting diode chip for backlight unit top view.Fig. 3 is the side illuminated light emitting diode shown by Fig. 2 section line A-A '
The sectional view of chip.Fig. 4 is the sectional view of the side illuminated light-emitting diode chip for backlight unit shown by Fig. 2 section line B-B '.It please be same
When referring to 1-4 scheme.
Side illuminated light emitting diode 1 includes a substrate 10, an electrode structure 11, a chip (chip) 20, colloid layer 31
With a fluorescence coating 41.Substrate 10 has an opposite upper surface 101 and a lower surface 102 and connection upper surface 101 and following table
One side surface 104 in face 102.It is to be respectively formed conducting wire and can connect in the upper surface of substrate 10 101 and lower surface 102
The conductive hole of lower surface.As shown in the 1st, 4 figures, electrode structure 11 includes at least two first conductive parts 111a, 111b and is separated by
Upper surface 101, two second conductive part 111a, 111b that substrate 10 is arranged in are separated by 102 and of lower surface that substrate 10 is arranged in
Two conductive holes 113a, 113b extend vertically through substrate 10 and are separated by setting, wherein each conductive hole be separately connected the first conductive part and
Second conductive part, such as conductive hole 113a connection the first conductive part 111a and the second conductive part 112a, conductive hole 113b connection
One conductive part 111b and the second conductive part 112b.
Furthermore the junction of conductive hole is exposed to the side surface 104 of substrate 10.As shown in the 1st, 4 figures, conductive hole 113a/
The junction of 113b is the side for extending to the second conductive part 112a/112b from the first conductive part 111a/111b and being exposed to substrate 10
Surface 104, and the junction of conductive hole 113a/113b is trimmed with side surface 104.In one embodiment, it is filled in conductive hole 113a/
The material of 113b for example (but without limitation) be select and the first, second line pattern (such as first conductive part 111a, 111b and
Second conductive part 112a/112b) identical material, as shown in the 1st, 4 figures.Furthermore in an embodiment, the second conductive part 112a/
The length of 112b is greater than the length of the first conductive part 111a/111b, but the present invention is not restricted to this.
Chip 20 has opposite a first surface 201 and a second surface 202, and the second surface 202 of chip 20 is set
(bridging) is set on two first conductive part 111a/111b, as shown in the 2nd, 3 figures.First surface 201 is the light-emitting surface of chip 20.
In one embodiment, the extending direction (such as parallel x/y plane) of the first surface 201 of chip 20 is substantially perpendicular to conductive hole
The extending direction (such as parallel yz plane) of the junction of 113a/113b.
Colloid layer 31 covers upper surface 101 and the coating chip 20 of substrate 10, and a top surface 311 of colloid layer 31 is exposed
The first surface 201 of chip 20 and the first surface 201 of chip 20 is trimmed out, as shown in Figure 3.The wherein colloid material of colloid layer 31
The reflectivity of material is at least more than 90%.In one embodiment, the material of colloidal materials is, for example, a high molecular material, such as white ring
Oxygen resin sealing (epoxy) or silicone resin sealing (silicone resin) (but not limited to this), the characteristic of high reflectance
Sidelight can be hidden, the efficiency of the positive light out of chip 20 is promoted.
Fluorescence coating 41 is then located on the top surface 311 of colloid layer 31 and covers the first surface 201 of chip 20.Embodiment
In, fluorescence coating 41 directly contacts and the first surface 201 of at least completely obscured chip 20.In one embodiment, 41 area of fluorescence coating
Greater than 20 area of chip and the area of the top surface 311 less than colloid layer 31, as shown in the 2nd, 3 figures, the both side edges of fluorescence coating 41
413 be the corresponding first conductive part 111a/111b of two edges 213 to two for being located at chip 20 two outer edge 1113a/1113b it
Between.When actual fabrication, using with multiple masks for separating setting opening, fluorescent material is coated with by being open in core
The fluorescence coating 41 of proper area is formed on piece 20.
It, can be by being exposed in 10 side surface 104 of substrate when the side illuminated light emitting diode 1 of practical application embodiment
Conductive hole 113a/113b junction and an outer member are electrically connected.Due to conductive hole 113a/113b junction and the first of chip 20
Surface 201 (light-emitting surface) is substantially perpendicular, when the conductive hole 113a/113b junction setting of light emitting diode can after outer member
Side illuminated light source is provided, such as side illuminated light emitting diode 1 may be disposed at the side (incidence surface) of light guide plate, the of chip 20
One surface 201 (light-emitting surface) towards light guide plate side provide light source, conductive hole 113a/113b junction be then set to circuit board with
Electric connection.
In embodiment, the conductive hole 113a/113b junction for being exposed to 10 side surface 104 of substrate for example can be by scolding tin and one
Outer member is electrically connected.And the area of conductive hole 113a/113b junction is the area that can contact for scolding tin.It is sent out compared to tradition
The design of optical diode, embodiment can be according to needed for practical application, by adjusting the conductive hole for being exposed to 10 side surface 104 of substrate
113a/113b junction area, such as increase the length Lc (Fig. 4) of conductive hole 113a/113b, it can be increased and outer member electrical property
The contact area of connection.
Wherein one group of design size of side illuminated light emitting diode 1 is as follows: the length L1 of the top surface 311 of colloid layer 31 is
3.0mm, width W1 are 0.4mm (Fig. 2), and the thickness H0 of substrate 10 is 0.38mm, and the thickness Hp of fluorescence coating 41 is 0.10mm, fluorescence
The thickness H1 of 41 top surface of layer to the lower surface of substrate 10 102 is 0.69mm (Fig. 3), and the length Lc of conductive hole 113a/113b is
0.57mm (Fig. 4).If be electrically connected when practical application by scolding tin and an outer member, it is exposed to 10 side surface 104 of substrate
The area of conductive hole 113a/113b junction be the accessible area of scolding tin, such as 0.38mm*0.57mm=0.217mm2.
Certainly, for such as usual skill it is found that those data are used by way of example only, the scope of the present invention is not limited only to those numbers
According to actual size can do suitably modified and variation according to needed for application conditions.
Fig. 5 A~5F is the manufacturing method of the side illuminated light emitting diode of one embodiment of the invention.Fig. 6 shows the present invention one
The electrode structure of multiple light emitting diodes does the signal of the position of matrix arrangement and corresponding two axially cutting road in embodiment
Figure.It is that manufacturing method is illustrated with the section of single light emitting diode in Fig. 5 A~5F, in favor of clearly showing that and describing phase
Close details, and position on substrate between the monomer region (unit regions) of multiple light emitting diodes close be with Cutting Road then
It can refer in Fig. 6 and arrange.Fig. 6 is the Cutting Road for showing two axial directions, such as along the first Cutting Road Cx of the first cut direction D1
With the second Cutting Road Cy along the second cut direction D2, and two Cutting Road Cx, Cy have one fixed width.Furthermore remaining is because of visual angle
And the detailed of the 1st~4 figure and foregoing teachings can not be please referred on the position such as surface or lateral margin etc. that Fig. 5 A~5F and Fig. 6 are shown
It describes in detail bright.
Firstly, providing a substrate 10, substrate 10 has an opposite upper surface 101 and a lower surface 102, and substrate 10 wraps
Multiple monomer region Ur (unit regions) is included, and forms electrode structure 11 at substrate 10.Such as institute in 5A figure and Fig. 6
Show, electrode structure 11 corresponds to Ur at each monomer region and includes at least: two first conductive parts 111a, 111b, which are separated by, to be arranged in base
Upper surface 101, two second conductive part 112a, 112b of plate 10 are separated by the lower surface 102 that substrate 10 is arranged in and two conductions
Hole 1130a, 1130b extend vertically through substrate 10 and are separated by setting, and each conductive hole 1130a/1130b is separately connected the first conductive part
111a/111b and the second conductive part 112a/112b.
In one embodiment, ceramic (ceramic) substrate 10 with low thermal coefficient of expansion is e.g. selected, in ceramic base
The upper and lower surface of plate is laid with first line pattern (trace pattern) and the second line pattern respectively, and with laser drill with
Plating is carried out for conductive material such as metal or is directly filled wherein, and forms through substrate 10 and be connected to the conductive hole of route up and down
1130a/1130b.It is to fill up conductive material in perforation and form conductive hole 1130a/ after wherein laser drill forms perforation
1130b.Conductive material is, for example, single metal or making perforation filling including two or more composition metal all may be used.One
In embodiment, conductive material be include that gold, silver, copper are at least one of.Filling of the present invention for conductive hole 1130a/1130b
Mode and material are simultaneously seldom restricted.In one embodiment, be filled in conductive hole 1130a/1130b material be select and first,
The identical material of second line pattern (such as first conductive part 111a, 111b and the second conductive part 112a/112b).Furthermore
In embodiment, the conductive hole formed before cutting is to be denoted as 1130a/1130b, and possessed conductive hole is in each monomer after cutting
It is denoted as 113a/113b, with benefit difference.
As shown in 5B figure, separates and multiple chips 20 are set on the upper surface of substrate 10 101, wherein at each monomer region
Chip 20 in Ur has opposite first surface (light-emitting surface) 201 and second surface 202, and the second surface 202 of chip 20
It is arranged on two first conductive part 111a, 111b.In embodiment, chip 20 is, for example, flip kenel, is arranged in a manner of pasting
On line pattern, such as it is connected across on first conductive part 111a, 111b.
As shown in 5C figure, colloid material 30 is formed in the upper surface of substrate 10 101, colloidal materials 30 simultaneously cover substrate
10 upper surfaces 101, those chips 20 and conductive hole 1130a/1130b.In embodiment, colloidal materials 30 are, for example, white epoxy tree
Rouge sealing (epoxy) or silicone resin sealing (silicone resin).In one embodiment, for example, via silicone resin sealing pressurization at
The mode of shape, 10 upper surface 101 of coating chip 20 and substrate.
As shown in 5D figure, part colloidal materials 30 are removed to form colloid layer 31, the top surface 311 of colloid layer 31 is
It exposes the first surface 201 of chip 20 and trims the first surface 201 of chip 20.In one embodiment, such as utilize grinding
(polishing) mode removes part colloidal materials 30 to expose the first surface 201 of chip 20.
As shown in 5E figure, a fluorescent material 40 is coated in the top surface 311 of colloid layer 31, in each monomer region Ur's
A fluorescence coating 41 is formed in appropriate area, and wherein fluorescence coating 41 at least covers the first surface 201 of chip 20.In embodiment, coating
In the step of fluorescent material 40, e.g.: providing a mask (not shown) above colloid layer, mask, which has, separates the more of setting
The position of a each corresponding chip 20 of opening, and by the coating of the opening of mask (as sprayed) fluorescent material 40 on the top of colloid layer 31
On surface 311, to form the first surface 201 that chip 20 is at least completely covered in fluorescence coating 41.In one embodiment, mask opening
Area is greater than the area of chip 20.In one embodiment, fluorescence coating 41 is the first surface 201 of direct contact chip 20.Furthermore one
In embodiment, in each light emitting diode for being formed after cutting step, the area of fluorescence coating 41 is greater than 20 area of chip and is less than
The area of the top surface 311 of colloid layer 31.The area that fluorescence coating 41 is formed in each monomer region Ur is, for example, opening for corresponding mask
Open area, and can be adjusted accordingly according to needed for application physical condition.
Later, as shown in 5F figure and Fig. 6, cutting (dicing) colloid layer 31, substrate 10 and conductive hole 1130a/
1130b, to form the structure of single light emitting diode of multiple separation.After cutting, the conductive hole 113a/ of each light emitting diode
There is 113b (for a part for cutting preceding former conductive hole 1130a/1130b) junction to extend to the second conduction from the first conductive part
Portion, and these junctions are exposed to side surface 104 (side surface 104 connects upper surface 101 and lower surface 102) and and the side of substrate 10
Surface 104 trims.
In embodiment, in each monomer region Ur, two conductive hole 1130a/1130b are with two first conductive part 111a/111b
Partly overlap, be as shown in 5A, 5B, 6 figures, when being cut excision conductive hole 113a/113b not with the first conductive part 111a/
The part of 111b overlapping, to form the junction being exposed at the side surface 104 of substrate 10.In one embodiment, such as 5A, 5B, 6 figures
Shown, the two conductive hole 1130a/1130b of each monomer region Ur are the first sides for respectively corresponding two first conductive part 111a/111b
Edge (ipsilateral penumbra) 1110a/1110b, and the conductive hole 1130a/1130b long axis of corresponding first conductive part 111a/111b is edge
First direction (such as direction x) arrangement, and first direction is parallel to a cut direction and (first cuts as Cutting Road Cx is gone in Fig. 6
Cut direction D1).In one embodiment, the long axis of conductive hole 1130a/1130b is, for example, respectively with the first conductive part 111a/111b's
First edge 1110a/1110b overlapping, therefore when the cutting step of progress colloid layer 31 and substrate 20, such as Cutting Road Cx in Fig. 6
It is to be cut along first edge 1110a/1110b.Therefore, the conductive hole 113a/113b of each light emitting diode monomer can shape after cutting
At the junction at the side surface 104 for being exposed to substrate 10 as shown in Figure 1.In one embodiment, the junction of conductive hole 113a/113b
It is perpendicular to the first conductive part 111a/111b and the second conductive part 112a/112b.After laser drill forms perforation before,
It is to fill up conductive material in perforation and form conductive hole 1130a/1130b, therefore conductive hole 1130a/1130b is after cutting,
Junction at be exposed to 10 side surface 104 of substrate be entire (i.e. conductive material continuous surface) and with 10 side surface 104 of substrate
It trims, as shown in Figure 1.
In addition, though being to show very to be greater than the elongated cylinder of short axle with long axis and make perforation shape with shape in embodiment and diagram
At the explanation of conductive hole 1130a/1130b, but the present invention is not specially limited its shape, the conductive hole formed in substrate 20
As long as the edge of 1130a/1130b and electrode (such as the first conductive part 111a/111b) overlap, make it single by being formed
It can be formed after the cutting step of body and be exposed to successional conduction junction at 10 side surface 104 of substrate, that is, it is implementable to belong to the present invention
Aspect.Shape (such as the area and shape in the upper surface of substrate 10 101, including major and minor axis of conductive hole 1130a/1130b
Size etc.) all can be depending on the junction area that the condition example of practical application is formed as desired, the present invention to this and is seldom done
Limitation.
In one embodiment, wherein one group of design size is, for example, the length LT of the substrate 10 before not cutting is 109.2mm,
Width WT is 54.5mm (Fig. 6), and the monomer region Ur of the multiple such as matrix arrangement shapes defined on substrate 10 is located at same a line
(column) it is 1.00mm that adjacent monomer region Ur, which can have spacing (pitch) WP, and is located at the adjacent list of same row (row)
The shortest distance Lg of two conductive hole 1130a/1130b is 1.05mm in body region Ur.The spacing of laser drill in the x and y direction
It is greater than 0.95mm.Substrate 10 is carried out as shown in Figure 6 with about 100 μm of width of the first Cutting Road Cx and the second Cutting Road Cy
Cutting.Wherein, do not cause the improper rupture of substrate sudden and violent with conductive hole 113a/113b is not influenced when the size of spacing WP is to cut
The range of the continuity conduction junction of dew can all be applied.It is 3.0mm (with Fig. 2's that each monomer region Ur, which is, for example, length, after cutting
L1), width is 0.4mm (with the W1 of Fig. 2), and the substrate 10 of one piece of thickness 0.38mm, and e.g. 42*30=can be formed after cutting
The monomer of 1260 side illuminated light emitting diodes.Certainly, if usual skill is it is found that those data are used by way of example only,
The scope of the present invention is not limited only to those data, and actual size can do suitably modified and variation according to needed for application conditions.
In addition, chip 20 is operating after repeatedly carrying out heating cooling or encapsulation in encapsulation process due to chip 20
In the process, it will cause the different each structure package material layer of thermal expansion coefficient and generate thermal stress at interface, and structure package material layer is caused to produce
Change shape, delamination, burst apart, the damage of even chip.Therefore in embodiment, for the substrate 10 of chip 20 is arranged and is covered in base
The colloid layer 31 directly contacted on plate 10 with substrate, thermal expansion coefficient (the Coefficient of thermal of its own
Expansion, CTE) it is the smaller the better, and thermal expansion coefficient difference between the two is also the smaller the better, to avoid being generated in processing procedure
Thermal stress to structure generation improperly destroy.In one embodiment, substrate 10 is, for example, to have low thermal expansion coefficient (about
6ppm/ DEG C) ceramic substrate, and colloid layer 31 be, for example, with low thermal coefficient of expansion white epoxy resin sealing or silicone resin
Sealing (silicone resin sealing has about 14ppm/ DEG C of thermal expansion coefficient).Furthermore ceramic substrate has highly resistance buckling strength, can also protect
Shield chip 20 is not pullled by stress, also there is the function of stressed barrier.In addition, colloid layer 31 (such as silica gel adds titanium dioxide)
Reflectivity is, for example, that the sidelight of chip 20 is directed at forward direction at least more than 90%, promotes the efficiency of positive light out, is promoted and shone
Degree.
In summary, in the side illuminated light emitting diode of embodiment, in addition to top surface 311 and the chip 20 of colloid layer 31
First surface 201 trims, as shown in figure 3, substrate 10 also has two edges 103 respectively with 101 in single light emitting diode construction
Load-bearing surface connection, colloid layer 31 also there are two colloid layer lateral margins 313 to connect respectively with top surface 311.In cutting colloid layer 31
After completing monomer cutting with substrate 10, two colloid layer lateral margins 313 of colloid layer 31 are trimmed in the two edges of substrate 10 103, conductive
Hole 113a/113b is to expose junction in the side surface of substrate 10 104 and trim in the side surface of substrate 10 104.Practical application
When, the conductive hole 113a/113b junction for being exposed to 10 side surface 104 of substrate can be sticked with an outer member (such as external circuit)
To complete to be electrically connected, form side illuminated light source, the i.e. light-emitting surface (i.e. first surface 201) of chip 20 and external electrode (i.e.
The junction that conductive hole 113a/113b exposes) it is vertical.The special designing proposed by embodiment can increase external electrode and outer
The surface mount area (the length Lc of such as above-mentioned increase conductive hole 113a/113b) of portion's element, so improve and external circuit into
Row contraposition precision when assembled and packaging efficiency.Especially when light emitting diode construction size is very small, the design of embodiment
Can also make the product yield and electrical performance of single structure, and in structure when external connection intensity and stability all can
Significantly improved.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of light emitting diode characterized by comprising
One substrate, multiple sides with an opposite upper surface and a lower surface and the connection upper surface and the lower surface
Surface, the substrate are a flat substrates；
One electrode structure, includes at least:
Two the first conductive parts are separated by the upper surface that the substrate is arranged in；
Two the second conductive parts are separated by the lower surface that the substrate is arranged in；With
Two conductive holes are through the substrate and are separated by setting, and each conductive hole is separately connected first conductive part and described
Second conductive part, and the conductive hole is an exposure on the side surface of the same side of the substrate；
One chip has opposite a first surface and a second surface, and the second surface of the chip is towards described
The upper surface of substrate, and the chip is arranged on two first conductive parts with bridging with rewinding method；
Colloid layer, has a top surface, and the colloid layer covers the upper surface of the substrate and coats the chip
Side surface, and expose the first surface of the chip；With
One fluorescence coating, on the first surface of the chip.
2. light emitting diode according to claim 1, which is characterized in that the junction of the conductive hole is led from described first
Electric portion extends to second conductive part and the side surface of the same side for being exposed to the substrate, the junction and the side
Surface trims.
3. light emitting diode according to claim 1, which is characterized in that the first surface of the chip goes out light for one
Face, the extending direction of the first surface are the extending directions substantially perpendicular to the junction of the conductive hole.
4. light emitting diode according to claim 1, which is characterized in that the colloid layer have two second sides respectively with
The upper surface of the substrate connects, two second side of the colloid layer respectively with the substrate described two first
Side is coplanar.
5. light emitting diode according to claim 1, which is characterized in that the fluorescence coating is directly to contact the chip
The first surface, and the first surface of at least completely obscured chip.
6. light emitting diode according to claim 1, which is characterized in that the area of the fluorescence coating is substantially equal to or big
The area of area in the first surface of the chip and the top surface less than the colloid layer.
7. light emitting diode according to claim 1, which is characterized in that the both side edges of the fluorescence coating correspond to described
The two edges of chip are between two outer edges of two first conductive parts.
8. a kind of manufacturing method of light emitting diode characterized by comprising
One substrate is provided, the substrate has an opposite upper surface and a lower surface, and the substrate includes multiple monomer regions,
The substrate is a flat substrate；
An electrode structure is formed at the substrate, the electrode structure, which corresponds at each monomer region, to be included at least:
Two the first conductive parts are separated by the upper surface that the substrate is arranged in；
Two the second conductive parts are separated by the lower surface that the substrate is arranged in；With
Two conductive holes are through the substrate and are separated by setting, and each conductive hole is separately connected first conductive part and described
Second conductive part；
Separate and multiple chips are set on the upper surface of the substrate, wherein the chip in each monomer region has
There are opposite a first surface and a second surface, and the upper table of the second surface of the chip towards the substrate
Face, and the chip is arranged on two first conductive parts with bridging with rewinding method；
Colloid material is formed on the upper surface of the substrate and coats the side surface of the chip, and is exposed described
The first surface of chip；
A fluorescent material is coated on the first surface of the chip；With
The colloid layer, the conductive hole and the substrate are cut, to form multiple isolated light emitting diodes, wherein each described
There is the conductive hole of light emitting diode junction to extend to second conductive part, and the junction from first conductive part
Be exposed to the same side surface of the substrate and trimmed with the side surface, the side surface connect the upper surface and it is described under
Surface.
9. manufacturing method according to claim 8, which is characterized in that in each light emitting diode, the institute of the chip
Stating first surface is a light-emitting surface, and the extending direction of the first surface is the junction substantially perpendicular to the conductive hole
Extending direction.
10. manufacturing method according to claim 8, which is characterized in that after cutting step, the institute of each light emitting diode
It states substrate to connect with the upper surface and the lower surface respectively with two first sides, the colloid layer has two second sides
Connect respectively with the upper surface of the substrate, and two second side of the colloid layer respectively with the institute of the substrate
State that two first sides are coplanar, the junction that the conductive hole exposes is trimmed in the side of the same side of the substrate
Surface.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562134577P | 2015-03-18 | 2015-03-18 | |
| US62/134,577 | 2015-03-18 | ||
| TW104125226A TWI657597B (en) | 2015-03-18 | 2015-08-04 | Edge lighting light emitting diode structure and method of manufacturing the same |
| TW104125226 | 2015-08-04 |
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| CN105990507A CN105990507A (en) | 2016-10-05 |
| CN105990507B true CN105990507B (en) | 2019-09-17 |
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| CN201610156784.6A Active CN105990507B (en) | 2015-03-18 | 2016-03-18 | side-illuminated light emitting diode structure and manufacturing method thereof |
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| Country | Link |
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| US (1) | US9882096B2 (en) |
| JP (1) | JP2016181689A (en) |
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2016
- 2016-03-18 JP JP2016055850A patent/JP2016181689A/en active Pending
- 2016-03-18 US US15/073,715 patent/US9882096B2/en active Active
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| Publication number | Publication date |
|---|---|
| US9882096B2 (en) | 2018-01-30 |
| US20160276547A1 (en) | 2016-09-22 |
| JP2016181689A (en) | 2016-10-13 |
| CN105990507A (en) | 2016-10-05 |
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