CN105990362A - 3D-MPROMRL (three-dimensional mask-programmable read-only memory) with reserved space - Google Patents
3D-MPROMRL (three-dimensional mask-programmable read-only memory) with reserved space Download PDFInfo
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- CN105990362A CN105990362A CN201510068485.2A CN201510068485A CN105990362A CN 105990362 A CN105990362 A CN 105990362A CN 201510068485 A CN201510068485 A CN 201510068485A CN 105990362 A CN105990362 A CN 105990362A
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Abstract
The invention provides a 3D-MPROMRL with a reserved storage layer. An original 3D-MPROMRL only includes an original storage layer; and in the updated 3D-MPROMRL, a new storage layer, namely the reserved storage layer, is formed on the original storage layer. In the same 3D-MPROMRL family, the 3D-MPROMRL of different versions are the same except the reserved storage layer. For all 3D-MPROMRL versions, a substrate circuit includes all peripheral circuits of all storage layers including the reserved storage layer no matter the reserved storage layer is formed or not.
Description
Technical field
The present invention relates to integrated circuit fields, more precisely, relate to masking film program read-only memory (mask-ROM).
Background technology
Three-dimensional masking film program read-only memory (three-dimensional mask-programmable read-only memory, referred to as 3D-MPROM) it is a monolithic memory chip, it contains multiple read-only accumulation layer of the masking film program being stacked with being stacked on substrate and (sees United States Patent (USP) 5,835,396).Its data pass through at least one data mask version typing (Fig. 1 C, step 10) in production procedure.Such as, data mask version 2 is containing multiple mask regions 2a-2i, and they are loaded with content-data 4a-4i (Figure 1A) respectively.Here, the figure representing content-data is referred to as datagraphic.After these datagraphics are once written to data mask version 2, just cannot have changed.
For the new content of typing, conventional art needs to abandon old data mask version 2, and uses new data mask version 2x (Fig. 1 C, step 12).In new data mask 2x, its mask regions 2a-2d, 2f-2i contain the datagraphic of original contents 4a-4d, 4f-4i, and mask regions 2e contains the datagraphic (Figure 1B) of new content 4e*.Original contents and new content 4a-4d, 4e*, 4f-4i are entered in the 3D-MPROM of renewal (Fig. 1 C, step 14) by new data mask 2x.
Along with the progress of technology, data mask version is more and more expensive, and the price of the data mask version of a 22nm is up to 260,000 dollars.In addition, the data volume of data mask version carrying is increasing, and the data mask version of a 22nm can carry the data of up to 155GB.A part in these data following certain time can update.Replace whole data mask version do not calculate for the renewal of fraction data.In order to overcome these defects, the present invention proposes a kind of three-dimensional masking film program read-only memory (3D-MPROM with headspaceRS)。
Summary of the invention
The main object of the present invention be to provide a kind of can the 3D-MPROM of update content at low cost.
It is another object of the present invention to reuse the initial data mask of 3D-MPROM.
According to these and other purpose, the present invention proposes a kind of three-dimensional masking film program read-only memory (3D-MPROM with headspaceRS).For less content update, the initial data mask of 3D-MPROM can be reused.Here, less content update refers to be much smaller than original contents in the data volume of update content.On initial data mask, at least reserved mask regions of a blank, it does not contains any datagraphic.When being necessary, the datagraphic of new content can be write in this reserved mask regions.The 3D-MPROM of multiple versionsRS, including original 3D-MPROMRSWith renewal 3D-MPROMRSForm a 3D-MPROMRSFamily.At same 3D-MPROMRSIn family, in addition to trough (memory area corresponding with reserved mask regions), the 3D-MPROM of different editionsRSIt is all identical.Original 3D-MPROMRSDo not store any content in trough, its data form reserved data space；Update 3D-MPROMRSStoring new content in trough, its data are formed and update data space.
The present invention proposes a kind of three-dimensional masking film program read-only memory (3D-MPROM with reserved accumulation layerRL).This 3D-MPROMRLCan be used to carry bigger content update.The 3D-MPROM of multiple versionsRL, including original 3D-MPROMRLWith renewal 3D-MPROMRLForm a 3D-MPROMRLFamily.At original 3D-MPROMRLIn, only form original storage layer；Updating 3D-MPROMRLIn, in addition to original storage layer, the most also form new accumulation layer (these accumulation layers are referred to as reserved accumulation layer).At same 3D-MPROMRLIn family, in addition to reserved accumulation layer, the 3D-MPROM of different editionsRLIt is all identical.Particularly, original 3D-MPROMRLUnderload (i.e. its storage capacity uses the most completely), it comprises only the original storage layer that be enough to store original contents；Along with the appearance of new content, update 3D-MPROMRLMiddle meeting is stepped up accumulation layer, until 3D-MPROMRLFully loaded (i.e. its storage capacity is used completely).Notice, although original 3D-MPROMRLUnderload, its function is normal.To all 3D-MPROMRLFor version, no matter whether it defines reserved accumulation layer, and the peripheral circuit of reserved accumulation layer all can be formed in the substrate.In other words, although original 3D-MPROMRLDo not form reserved accumulation layer, its substrate also can be formed the peripheral circuit of reserved accumulation layer.
Accompanying drawing explanation
Figure 1A-Figure 1B shows an old data mask version and a new data mask version (conventional art)；Fig. 1 C is the data inputting flow chart (conventional art) of new and old content.
Fig. 2 A-Fig. 2 B shows that an initial data mask 6 and updates data mask version 6*；Fig. 2 C is corresponding new and old content-data typing flow chart.
Fig. 3 AA-Fig. 3 AB is original 3D-MPROMRSThe different views of array 30；Fig. 3 BA-Fig. 3 BB is to update 3D-MPROMRSThe different views of array 30*.
Fig. 4 A is an original 3D-MPROMRLSectional view；Fig. 4 B is the top view of its substrate；Fig. 4 C is the block diagram of its substrate circuitry.
Fig. 5 A is a renewal 3D-MPROMRLSectional view；Fig. 5 B is the block diagram of its substrate circuitry.
Noticing, these accompanying drawings are only synoptic diagrams, and they nots to scale (NTS) are drawn.For the sake of obvious and convenient, portion size and structure in figure may zoom in or out.In different embodiments, identical symbol typicallys represent correspondence or similar structure.
Detailed description of the invention
Fig. 2 A-Fig. 2 B shows that an initial data mask 6 and updates data mask version 6*；Fig. 2 C is the data inputting flow chart of corresponding new and old content.Initial data mask 6 is containing multiple mask regions 6a-6i (Fig. 2 A).Mask regions 6a-6e, 6g-6i contain the datagraphic representing original contents 8a-8e, 8g-8i.Here, mask regions 6f is reserved for new content in the future.This mask regions 6f does not has datagraphic, and it is blank, i.e. full impregnated or the darkest.Original contents 8a-8e, 8g-8i are entered into the 3D-MPROM of first batch by initial data mask 6RSIn (the most original 3D-MPROMRS) (Fig. 2 C, step 20).
When new content 8f needs to be entered into renewal 3D-MPROMRSTime middle, the datagraphic representing new content is written in the 6f of mask regions (Fig. 2 C, step 22).Therefore, data mask version 6* of renewal contains original contents 8a-8e, 8g-8i and the datagraphic (Fig. 2 B) of new content 8f.These contents 8a-8e, 8f, 8g-8i are entered into the 3D-MPROM of the second batch by updating data mask version 6*RSIn (i.e. update 3D-MPROMRS) (Fig. 2 C, step 24).In the present invention, due to original 3D-MPROMRSWith renewal 3D-MPROMRSAll use same data mask version 6 (though having updated, but same data mask version；Technology different from the past uses two diverse data mask versions 2 and 2x), they are referred to as 3D-MPROMRSFamily.Owing to data mask version 6 is recycled, the cost increase of the data mask version that less content update causes is the least.In order to be necessary to reuse initial data mask, the datagraphic of original contents should occupy most of area of initial data mask.
Fig. 3 AA-Fig. 3 BB represents 3D-MPROMRSThe prototype version of array and more redaction.3D-MPROMRSArray 30 (or 30*) is containing a plurality of low address line (210a ...), high address line (230a ...) and storage unit.Each storage unit is containing at least one data film 220.Whether this data film exists access opening and determines the data of storage unit storage.The example of data film includes dielectric film or resistive film.The datagraphic of data film is determined by data mask version 6 (or 6*).Easy in order to do figure, in Fig. 3 AA-Fig. 3 BB, all diodes, transistor and other storage assembly are all not drawn into.
Fig. 3 AA is the original 3D-MPROM of AA ' line along Fig. 3 ABRSThe sectional view of array 30；Fig. 3 AB is original 3D-MPROMRSThe datagraphic 250 of data film 220 and it and address wire 210a, 230a in array 30 ... relative position.3D-MPROMRSArray 30 includes two region 240A and 240B.First area 240A is corresponding to the region 260A of data film 250, and it contains datagraphic 22a-220c.Correspondingly, storage unit storage original contents in the 240A of first area, its data form original data space.On the other hand, second area 240B is corresponding to the region 260B of data film 250, and it does not contains datagraphic, for complete dark image 220x.Correspondingly, the storage unit in second area 240B does not store any content, and it is trough.
Fig. 3 AB is that BB ' line updates 3D-MPROM along Fig. 3 BBRSThe sectional view of array 30*；Fig. 3 BB is to update 3D-MPROMRSThe renewal datagraphic 250* of data film 220 and it and address wire 210a, 230a in array 30* ... relative position.Here, initial data figure 220a-220c keeps constant, but datagraphic 220d, 220e of representing new content are written into the region 260B* of data film 220.In this embodiment, second area 240B* stores update content.In order to simplify production process when content update, trough 240B (240B*) is preferably located at uppermost accumulation layer in 3D-MPROM.
In Fig. 3 AA-Fig. 3 BB, an accumulation layer only has subregion to be trough, and it applies in general to less content update.For bigger content update, can further a whole accumulation layer be stayed in advance.Accordingly, the present invention proposes a kind of three-dimensional masking film program read-only memory (3D-MPROM with reserved accumulation layerRL).The 3D-MPROM of multiple versionsRL, including original 3D-MPROMRLWith renewal 3D-MPROMRLForm a 3D-MPROMRLFamily.At original 3D-MPROMRLIn, only form original storage layer；Updating 3D-MPROMRLIn, in addition to original storage layer, form new accumulation layer (referred to as reserving accumulation layer) the most above it.At same 3D-MPROMRLIn family, in addition to reserved accumulation layer, the 3D-MPROM of different editionsRLIt is all identical.Particularly, original 3D-MPROMRLUnderload (i.e. its storage capacity uses the most completely), it comprises only the accumulation layer that be enough to store original contents；Along with the appearance of new content, update 3D-MPROMRLIn can increase accumulation layer, until 3D-MPROMRLFully loaded (i.e. its storage capacity is used completely).Notice, although original 3D-MPROMRLUnderload, its function is normal.To all 3D-MPROMRLFor version, no matter whether it defines reserved accumulation layer, and the peripheral circuit of reserved accumulation layer all can be formed in the substrate.In other words, although original 3D-MPROMRLDo not form reserved accumulation layer, its substrate also can be formed the peripheral circuit of reserved accumulation layer.
Fig. 4 A-Fig. 5 B discloses a kind of 3D-MPROMRL.It contains 2 accumulation layers, wherein, first (original) accumulation layer storage original contents, and second (reserving) accumulation layer storage update content.Certainly, 3D-MPROMRLAccumulation layer can be reserved containing two or more accumulation layer and two or more.Such as, it can contain 8 accumulation layers: original 3D-MPROMRLContaining 5 original storage layers, they are positioned at the bottom；According to the content updated, update 3D-MPROMRLCan increase 1-3 reserved accumulation layer, they are positioned at the top of original storage layer (the 5th accumulation layer).Particularly, for first time content update, update 3D-MPROMRLIncrease the 1st reserved accumulation layer (the i.e. the 6th accumulation layer is formed above the 5th accumulation layer)；For second time content update, update 3D-MPROMRLIncrease the 2nd reserved accumulation layer (the i.e. the 7th accumulation layer is formed above the 6th accumulation layer)；For third time content update, update 3D-MPROMRLIncrease the 3rd reserved accumulation layer (the i.e. the 8th accumulation layer is formed above the 7th accumulation layer).
Fig. 4 A-Fig. 4 C shows original 3D-MPROMRLThe various characteristics of 40.Fig. 4 A is its sectional view.This 3D-MPROMRL40 comprise only the first accumulation layer 100, do not have the second accumulation layer.Storage unit composition storage array 100AY in first accumulation layer 100, its storage original contents (being defined by data film 120).The peripheral circuit 100PC of the first accumulation layer 100 is formed in substrate 0, and it is coupled by inter-layer passages hole 110av and the first accumulation layer 100.Notice, although original 3D-MPROMRL40 do not contain accumulation layer 200, but the peripheral circuit 200PC of accumulation layer 200 and inter-layer passages hole 210av thereof is still formed in storage chip 40.
Fig. 4 B is original 3D-MPROMRLThe top view of 40 substrates 0.It contains the peripheral circuit 100PC of the first accumulation layer 100, and the peripheral circuit 200PC of the second accumulation layer (not yet being formed).This figure only depicts the peripheral circuit along an address wire direction.Can be seen that, although at original 3D-MPROMRLBeing formed without second (reserving) accumulation layer 200 in 40, its peripheral circuit 200PC has been formed in substrate 0.This is because all version 3 D-MPROMRLSubstrate circuitry all defined by same set of mask, substrate mask can contain the figure of all accumulation layers (include reserved accumulation layer) substrate circuitry.Also depict storage array 100AY projection on substrate 0 in figure 4b.
Fig. 4 C is original 3D-MPROMRLThe substrate circuitry block diagram of 40.First peripheral circuit 100PC couples with storage array 100AY.It is stored in the data in storage array 100AY to be read by the first peripheral circuit 100PC.Easy in order to do figure, diode, transistor and other storage assembly are all not drawn into.All wiring 210av of the second peripheral circuit 200PC are all to suspend, and it does not couples with any storage array.Notice, although original 3D-MPROMRLUnderload, its function is normal.
Fig. 5 A-Fig. 5 B display updates 3D-MPROMRLThe various characteristics of 40*.Fig. 5 A is its sectional view.Update 3D-MPROMRL40* produces accumulation layer 200 always, and i.e. it defines new accumulation layer (reserved accumulation layer) 200 above original storage layer 100.The storage unit composition storage array 200AY of accumulation layer 200.It stores new content (being defined by data film 220).The peripheral circuit 200PC of accumulation layer 200 is coupled by inter-layer passages hole 210av.
Fig. 5 B is to update 3D-MPROMRLThe substrate circuitry block diagram of 40*.Notice, original 3D-MPROMRL40 and renewal 3D-MPROMRL40* has identical substrate circuitry.Second peripheral circuit 200PC couples with storage array 200AY.It is stored in the data in storage array 200AY to be read by the second peripheral circuit 200PC.Easy in order to do figure, diode, transistor and other storage assembly are all not drawn into.
3D-MPROMRLIt is especially suitable for interim content distribution.Initial data mask can be used on the 3D-MPROM of all versionsRLIn, and new data mask can be used on renewal 3D-MPROMRLIn.So, the maximum potential of each data mask version can be played.Additionally, due to new content is stored in reserved accumulation layer, and reserved accumulation layer is formed at (rather than side) above original storage layer, the most original 3D-MPROMRLBeing not necessary for new content and reserve any Substrate Area, the potentiality of the most all Substrate Area are also played.Generally speaking, 3D-MPROMRLThe additional masks version cost and chip cost brought due to content update can be greatly reduced.
It should be appreciated that on the premise of not away from the spirit and scope of the present invention, can be modified the form of the present invention and details, this does not hinder the spirit of they application present invention.Therefore, except the spirit according to appended claims, the present invention should not be restricted by any restriction.
Claims (10)
1. a three-dimensional masking film program read-only memory (3D-MPROM with reserved accumulation layerRL) family, it is characterised in that contain:
The one 3D-MPROM chip containing a 3D-MPROM array, a 3D-MPROM array contains multiple accumulation layer being stacked with；
One the 2nd 3D-MPROM chip containing the 2nd 3D-MPROM array, the 2nd 3D-MPROM array contains multiple accumulation layer being stacked with；
In addition at least one reserves accumulation layer, the first and second 3D-MPROM chips are identical；Oneth 3D-MPROM chip does not contains this reserved accumulation layer, and the 2nd 3D-MPROM chip contains this reserved accumulation layer.
3D-MPROM the most according to claim 1RLFamily, is further characterized in that: the function of a 3D-MPROM chip is normal.
3D-MPROM the most according to claim 1RLFamily, is further characterized in that: this first and second 3D-MPROM chip has identical substrate circuitry.
3D-MPROM the most according to claim 3RLFamily, is further characterized in that: the substrate of a 3D-MPROM chip contains the peripheral circuit of this reserved accumulation layer.
3D-MPROM the most according to claim 3RLFamily, is further characterized in that: the substrate of a 3D-MPROM chip contains at least part of inter-layer passages hole of this reserved accumulation layer.
3D-MPROM the most according to claim 3RLFamily, is further characterized in that: the substrate of the 2nd 3D-MPROM chip contains the peripheral circuit of this reserved accumulation layer.
3D-MPROM the most according to claim 1RLFamily, is further characterized in that: in the 2nd 3D-MPROM chip, the top of all accumulation layers of 3D-MPROM chip that this reserved accumulation layer is positioned at.
3D-MPROM the most according to claim 1RLFamily, is further characterized in that: the 2nd 3D-MPROM chip contains first reserves accumulation layer.
3D-MPROM the most according to claim 8RLFamily, is further characterized in that: containing one the 3rd 3D-MPROM chip, and the 3rd 3D-MPROM chip contains second reserves accumulation layer.
3D-MPROM the most according to claim 9RLFamily, is further characterized in that: this second is reserved accumulation layer and be positioned at this and first reserve above accumulation layer.
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| CN201510068485.2A CN105990362A (en) | 2015-02-10 | 2015-02-10 | 3D-MPROMRL (three-dimensional mask-programmable read-only memory) with reserved space |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5124948A (en) * | 1988-03-18 | 1992-06-23 | Makoto Takizawa | Mask ROM with spare memory cells |
| CN1734678A (en) * | 2004-08-09 | 2006-02-15 | 凌阳科技股份有限公司 | Method for using nonvolatile memory and electronic apparatus thereof |
| CN101221816A (en) * | 2007-01-12 | 2008-07-16 | 张国飙 | Mask programming memory device with obligate space |
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2015
- 2015-02-10 CN CN201510068485.2A patent/CN105990362A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5124948A (en) * | 1988-03-18 | 1992-06-23 | Makoto Takizawa | Mask ROM with spare memory cells |
| CN1734678A (en) * | 2004-08-09 | 2006-02-15 | 凌阳科技股份有限公司 | Method for using nonvolatile memory and electronic apparatus thereof |
| CN101221816A (en) * | 2007-01-12 | 2008-07-16 | 张国飙 | Mask programming memory device with obligate space |
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