CN105984838A - MEMS device and preparation method thereof and electronic device - Google Patents
MEMS device and preparation method thereof and electronic device Download PDFInfo
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- CN105984838A CN105984838A CN201510089920.XA CN201510089920A CN105984838A CN 105984838 A CN105984838 A CN 105984838A CN 201510089920 A CN201510089920 A CN 201510089920A CN 105984838 A CN105984838 A CN 105984838A
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- mems
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Abstract
The invention relates to an MEMS device and a preparation method thereof and an electronic device. The method comprises the steps that 1, a bottom wafer is provided, and the MEMS device is formed on the bottom wafer, wherein a detection area and a protection layer covering the detection area are formed on the bottom wafer; 2, a top wafer is provided and connected with the bottom wafer into a whole to wrap the protection layer in a sealing mode; 3, dicing cutting is conducted on the top of the top wafer to form an opening, and part of the protection layer is exposed; 4, the protection layer is removed to expose the detection area. The preparation method has the advantage that the defects generated after dicing are reduced, and particles are reduced; occurrence of probe card damage is avoided, and the preparation cost is reduced.
Description
Technical field
The present invention relates to semiconductor applications, in particular it relates to a kind of MEMS and preparation thereof
Method, electronic installation.
Background technology
Along with the development of semiconductor technology, at various sensors (motion sensor) series products
On market, smart mobile phone, integrated CMOS and MEMS (MEMS) device are increasingly becoming the most main
Stream, state-of-the-art technology, and along with the renewal of technology, the developing direction of this series products is less chi
Very little, high-quality electric property and lower loss.
In MEMS field, after wafer combines, (Bonding Wafer) needs to carry out reliability survey
Examination, such as WAT/CP test etc., therefore after wafer combines, generally carry out cutting (Dicing),
This step is the most only cut off top wafer (Top Wafer) and exposes bottom wafers (Bottom Wafer)
Device carry out WAT/CP test wait, cutting described top wafer time would generally there are some
Grain (Particle) falls in bottom wafers, causes the probe (Probe Card) when detection to touch
Damage after Li.
It is thus desirable to preparation method and/or detection method to current semiconductor device are improved further,
So as elimination the problems referred to above.
Summary of the invention
Introducing the concept of a series of reduced form in Summary, this will be in detailed description of the invention
Part further describes.The Summary of the present invention is not meant to attempt to limit institute
The key feature of claimed technical scheme and essential features, more do not mean that and attempt to determine and wanted
Seek the protection domain of the technical scheme of protection.
The present invention is in order to overcome the problem of presently, there are, it is provided that the preparation method of a kind of MEMS, bag
Include:
Step S1: bottom wafers is provided, is formed with MEMS in described bottom wafers, wherein,
It is also formed with in described bottom wafers detecting region and covering the protective layer in described detection region；
Step S2: top wafer is provided, and is combined into one with described bottom wafers, with sealed envelope institute
State protective layer；
Step S3: the top of described top wafer is carried out scribing cutting, to form opening, exposed portion
Described protective layer；
Step S4: remove described protective layer, to expose described detection region.
Alternatively, described step S1 includes:
Step S11: bottom wafers is provided and deposits protection material layer in described bottom wafers, to cover
Described MEMS；
Step S12: pattern described protection material layer, to form described protection in described detection region
Layer, exposes the described MEMS beyond described detection region simultaneously.
Alternatively, in described step S2, described top wafer is formed with some functional pattern, wherein
The mating shapes of the cavity and the described protective layer that are formed between two adjacent described functional pattern, with
Described protective layer is sealed after described joint.
Alternatively, in described step S1, polyimides selected by described protective layer.
Alternatively, in described step S1, the thickness of described protective layer is 25-35um.
Alternatively, still further comprise between described step S2 and described step S3 described top crystalline substance
Circle is ground the step thinned.
Alternatively, in described step S4, remove described protective layer by ashing and the method peeled off.
Alternatively, after described step S4, described method still further comprises to be entered described detection region
The step of row detection.
Present invention also offers a kind of MEMS prepared based on above-mentioned method.
Present invention also offers a kind of electronic installation, including above-mentioned MEMS.
The present invention is to solve problems of the prior art, it is provided that a kind of MEMS and system thereof
Preparation Method, forms protective layer, the most before splicing to avoid on described detection region
The granule (particle) produced when opening described top wafer drops in described bottom wafers, by right
The change of MEMS product technique, effectively reduces the granule in bottom wafers, it is suppressed that detection tissue damage
Problem.
It is an advantage of the current invention that:
1, decrease the defect (Defect) after scribing (Dicing), decrease granule (particle).
2, avoid the generation of detection tissue damage (Probe Card damage), reduce manufacturing cost.
Accompanying drawing explanation
The drawings below of the present invention is used for understanding the present invention in this as the part of the present invention.Accompanying drawing shows
Go out embodiments of the invention and description thereof, be used for explaining assembly of the invention and principle.In the accompanying drawings,
Fig. 1 a-1d is the preparation process schematic diagram of MEMS described in prior art；
Fig. 2 a-2g is the preparation process schematic diagram of MEMS described in prior art；
Fig. 3 is the preparation technology flow chart of MEMS described in the embodiment of the invention.
Detailed description of the invention
In the following description, a large amount of concrete details is given to provide to the present invention the most thoroughly
Understand.It is, however, obvious to a person skilled in the art that the present invention can be without one
Or multiple these details and be carried out.In other example, in order to avoid obscuring with the present invention,
Technical characteristics more well known in the art are not described.
It should be appreciated that the present invention can implement in different forms, and should not be construed as being limited to this
In propose embodiment.On the contrary, it is open thoroughly with complete to provide these embodiments to make, and incite somebody to action this
The scope of invention fully passes to those skilled in the art.In the accompanying drawings, in order to clear, Ceng He district
Size and relative size may be exaggerated.Same reference numerals represents identical element from start to finish.
It should be understood that when element or layer be referred to as " ... on ", " with ... adjacent ", " being connected to " or " coupling
Conjunction is arrived " other element or during layer, its can directly on other element or layer, adjacent thereto, connect
Or be coupled to other element or layer, or element between two parties or layer can be there is.On the contrary, claimed when element
For " directly exist ... on ", " with ... direct neighbor ", " being directly connected to " or " being directly coupled to " other yuan
When part or layer, the most there is not element between two parties or layer.Although it should be understood that can use term first,
Two, the various element of third description, parts, district, floor and/or part, these elements, parts, district,
Layer and/or part should not be limited by these terms.These terms be used merely to distinguish an element, parts,
District, floor or part and another element, parts, district, floor or part.Therefore, without departing from the present invention
Under teaching, the first element discussed below, parts, district, floor or part be represented by the second element,
Parts, district, floor or part.
Spatial relationship term such as " ... under ", " ... below ", " following ", " ... under ",
" ... on ", " above " etc., here can describe for convenience and be used thus in description figure
A shown element or feature and other element or the relation of feature.It should be understood that except shown in figure
Orientation beyond, spatial relationship term is intended to also include the different orientation of device in using and operating.Example
As, if the device upset in accompanying drawing, then, it is described as " below other element " or " its it
Under " or " under it " element or feature will be oriented to other element or feature " on ".Therefore, example
Property term " ... below " and " ... under " upper and lower two orientations can be included.Device can additionally take
Correspondingly explained to (90-degree rotation or other orientation) and spatial description language as used herein.
The purpose of term as used herein is only that description specific embodiment and the limit not as the present invention
System.When using at this, " one ", " one " and " described/to be somebody's turn to do " of singulative is also intended to include plural number
Form, unless context is expressly noted that other mode.It is also to be understood that term " forms " and/or " including ",
When using in this specification, determine described feature, integer, step, operation, element and/or parts
Existence, but be not excluded for one or more other feature, integer, step, operation, element, parts
And/or group existence or interpolation.When using at this, term "and/or" includes any of relevant Listed Items
And all combinations.
The preparation method of MEMS described in prior art as is shown in figs. la to ld, first, such as Fig. 1
Shown in, it is provided that bottom wafers 101 and top wafer 102, then by described bottom wafers 101 and top
Wafer 102 is combined into one, and as shown in Figure 1 b, then performs backgrind technique, brilliant to reduce top
The thickness of circle 102, as illustrated in figure 1 c, final cutting top wafer (Top Wafer), to expose bottom
The device of wafer (Bottom Wafer) carries out WAT/CP test, usual when cutting described top wafer
There will be some granules (Particle) and fall in bottom wafers, cause the probe (Probe Card) when detection
Damage, as shown in Fig. 1 d right figure after touching granule.
It is thus desirable to preparation method and/or detection method to current semiconductor device are improved further,
So as elimination the problems referred to above.
Embodiment 1
The present invention is to solve problem present in current MEMS preparation process, it is provided that a kind of
The preparation of MEMS, described method is further described by 2a-2g below in conjunction with the accompanying drawings, wherein,
Fig. 2 a-2g is the preparation process schematic diagram of heretofore described MEMS.
First, step 201 is performed, it is provided that bottom wafers 201 is also formed in described bottom wafers
MEMS, wherein said bottom wafers 201 includes detecting region.
Specifically, as shown in Figure 2 a, in this step, described bottom wafers 201 can be following being carried
To material at least one: stacking silicon (SSOI) on silicon, silicon-on-insulator (SOI), insulator,
On insulator on stacking SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and insulator
Germanium (GeOI) etc..
Form MEMS in the front of described bottom wafers 201, wherein said MEMS can
Select with the kind according to MEMS, such as, can be vibrating diaphragm, backboard, electrode etc., not
It is confined to a certain kind.
Wherein, in order to detect preparing device, described bottom wafers is also formed with for examining
Survey the region of the correlated performances such as reliability.On the region of this detection region and described detection area peripheral edge
It is each formed with described MEMS.
Performing step 202, deposition protection material layer in described bottom wafers, to cover described MEMS
Device.
Specifically, as shown in Figure 2 a, deposition protection material layer, to cover described bottom wafers and described
MEMS.
Wherein, described protection material layer selects polyimides, and the thickness of described protection material layer is
25-35um。
Perform step 203, pattern described protection material layer, described to be formed in described detection region
Protective layer 202, exposes the described MEMS beyond described detection region simultaneously.
As shown in Figure 2 b, pattern described protection material layer in this step, with in described detection region
Form described protective layer 202, region as shown by arrows, in this detection region, fill described protective layer,
After bottom wafers and top wafer combine, described protective layer is stuck between bottom wafers and top wafer
The granule that can effectively prevent scribing (Dicing) from causing drops scratch in bottom wafers.
Expose the described MEMS beyond described detection region, the present invention's the most simultaneously
One embodiment is selected O2Atmosphere etch described protection material layer, it is also possible to be simultaneously introduced other a small amount of gas
Body such as CF4、CO2、N2, described etching pressure can be 50-200mTorr, preferably 100-150
MTorr, power is 200-600W, and the most described etching period is 5-80s, simultaneously in the present invention
The gas flow that middle selection is bigger, at O of the present invention2Flow be 30-300sccm.
Perform step 204, it is provided that top wafer 203, and be combined into one with described bottom wafers, with patch
Close and wrap up described protective layer 202.
Specifically, as shown in Figure 2 c, top wafer 203, wherein, described top are provided in this step
Wafer is formed some functional pattern, wherein has the sky formed between the described functional pattern of adjacent two
Chamber and the mating shapes of described protective layer, to seal described protective layer after described joint.
After splicing, during the end face of described protective layer is close to described top wafer, functional pattern is formed
The surface of cavity, its sidewall is close to the sidewall of described function element, the most described protective layer and described top
The direct sealing engagement of wafer, does not has any gap, described protective layer to be filled up completely with described cavity between the two
With the surface in described detection region, drop in bottom with the granule effectively preventing scribing (Dicing) from causing
Scratch on wafer.
Then described top wafer 203 is engaged with described bottom wafers 201, as shown in Figure 2 d, with
Form the space of closing between the two.Described bonding method can select the side of eutectic bond or thermal bonding
Method is bonded, with shape all-in-one-piece structure.
Before described joint, it is also possible to include described bottom wafers 201 is carried out prerinse, to improve
The Joint Properties of described bottom wafers 201.Specifically, in this step with Fluohydric acid. DHF (its of dilution
In comprise HF, H2O2And H2O) surface to described bottom wafers 201 carries out prerinse, wherein,
The concentration of described DHF the most strictly limits, in the present invention preferably HF:H2O2:H2O=0.1-1.5:1:5.
It addition, after having performed cleaning step, described method still further comprises described bottom wafers
201 process being dried.
Alternatively, select isopropanol (IPA) that described bottom wafers 201 is dried.
Perform step 205, be ground described top wafer thinning and top to described top wafer
Carry out scribing cutting, to form opening, protective layer described in exposed portion.
Specifically, as shown in Figure 2 e, described top is thinned by the thinning method of grinding in this step brilliant
Circle, the thinning parameter of wherein said grinding can be selected various parameters commonly used in the art, not limit to
In a certain numerical range, do not repeat them here.
Then the method selecting laser scribing carries out described cutting to described top wafer, as shown in figure 2f,
Such as select the semiconductor laser scribing machine semiconductor laser scribing machine of G3005F (the such as model be), deeply
Degree precision controlling 300u+/-5u, maximum scribing degree of depth 1.2mm.
In this step, the optical maser wavelength that described laser scribing is selected: 1.06 μm, scribing live width:
≤ 0.03mm, laser repetition rate: 20KHz～100KHz, maximum scribing speed: 230mm/s, swashs
Light peak power :≤15W (according to the selection of laser instrument, can promote peak power), uses power supply: 220V/
50Hz/1KVA, the type of cooling: forced air cooling.
The most only cut off protective layer described in wafer (Top Wafer) exposed portion, top in this step,
To remove described protective layer in subsequent steps.
In this step owing to filling out between the most described top wafer 203 and described bottom wafers
Being filled with described protective layer, described protective layer is stuck between bottom wafers and top wafer and can effectively prevent from drawing
The granule that sheet (Dicing) causes drops scratch in bottom wafers.
Perform step 206, remove described protective layer, to expose described detection region.
Specifically, as shown in Figure 2 g, described protective layer is removed, to expose by ashing and the method peeled off
MEMS in described detection region and this detection region.
Perform step 207, described detection region is detected.
Such as the device of bottom wafers (Bottom Wafer) is carried out WAT/CP test etc., at this not
Repeat again.
So far, Jie of the correlation step of the manufacture method of the MEMS of the embodiment of the present invention is completed
Continue.After the above step, it is also possible to including other correlation step, here is omitted.Further, remove
Outside above-mentioned steps, the manufacture method of the present embodiment can also be among each step above-mentioned or different
Including other steps between step, these steps all can be realized by various techniques of the prior art,
Here is omitted.
The present invention is to solve problems of the prior art, it is provided that a kind of MEMS and system thereof
Preparation Method, forms protective layer, the most before splicing to avoid on described detection region
The granule (particle) produced when opening described top wafer drops in described bottom wafers, by right
The change of MEMS product technique, effectively reduces the granule in bottom wafers, it is suppressed that detection tissue damage
Problem.
It is an advantage of the current invention that:
1, decrease the defect (Defect) after scribing (Dicing), decrease granule (particle).
2, avoid the generation of detection tissue damage (Probe Card damage), reduce manufacturing cost.
Fig. 3 is the preparation technology flow chart of MEMS described in the embodiment of the invention, tool
Body comprises the following steps:
Step S1: bottom wafers is provided, is formed with MEMS in described bottom wafers, wherein,
It is also formed with in described bottom wafers detecting region and covering the protective layer in described detection region；
Step S2: top wafer is provided, and is combined into one with described bottom wafers, with sealed envelope institute
State protective layer；
Step S3: the top of described top wafer is carried out scribing cutting, to form opening, exposed portion
Described protective layer；
Step S4: remove described protective layer, to expose described detection region.
Embodiment 2
Present invention also offers a kind of MEMS, described MEMS is selected described in embodiment 1
Method prepare.The MEMS prepared by method described in the embodiment of the present invention 1 is decreased draws
Defect (Defect) after sheet (Dicing), decreases granule (particle).Simultaneously, it is thus also avoided that inspection
Survey the generation of tissue damage (Probe Card damage), reduce manufacturing cost.
Embodiment 3
Present invention also offers a kind of electronic installation, including the MEMS described in embodiment 2.Wherein,
MEMS is the MEMS described in embodiment 2, or according to the preparation method described in embodiment 1
The MEMS obtained.
The electronic installation of the present embodiment, can be mobile phone, panel computer, notebook computer, net book,
Game machine, television set, VCD, DVD, navigator, photographing unit, video camera, recording pen, MP3,
Any electronic product such as MP4, PSP or equipment, it is possible to for any centre including described MEMS
Product.The electronic installation of the embodiment of the present invention, owing to employing above-mentioned MEMS, thus has
Better performance.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment
It is only intended to citing and descriptive purpose, and is not intended to limit the invention to described scope of embodiments
In.In addition it will be appreciated by persons skilled in the art that and the invention is not limited in above-described embodiment, root
Can also make more kinds of variants and modifications according to the teachings of the present invention, these variants and modifications all fall within this
Within inventing scope required for protection.Protection scope of the present invention by the appended claims and etc.
Effect scope is defined.
Claims (10)
1. a preparation method for MEMS, including:
Step S1: bottom wafers is provided, is formed with MEMS in described bottom wafers, wherein,
It is also formed with in described bottom wafers detecting region and covering the protective layer in described detection region；
Step S2: top wafer is provided, and is combined into one with described bottom wafers, with sealed envelope institute
State protective layer；
Step S3: the top of described top wafer is carried out scribing cutting, to form opening, exposed portion
Described protective layer；
Step S4: remove described protective layer, to expose described detection region.
Method the most according to claim 1, it is characterised in that described step S1 includes:
Step S11: bottom wafers is provided and deposits protection material layer in described bottom wafers, to cover
Described MEMS；
Step S12: pattern described protection material layer, to form described protection in described detection region
Layer, exposes the described MEMS beyond described detection region simultaneously.
Method the most according to claim 1, it is characterised in that in described step S2, described
Top wafer is formed some functional pattern, is formed between two the most adjacent described functional pattern
Cavity and the mating shapes of described protective layer, to seal described protective layer after described joint.
Method the most according to claim 1, it is characterised in that in described step S1, described
Polyimides selected by protective layer.
Method the most according to claim 1, it is characterised in that in described step S1, described
The thickness of protective layer is 25-35um.
Method the most according to claim 1, it is characterised in that in described step S2 and described step
Still further comprise, between rapid S3, the step that described top wafer is ground to be thinned.
Method the most according to claim 1, it is characterised in that in described step S4, pass through
Ashing and the method peeled off remove described protective layer.
Method the most according to claim 1, it is characterised in that after described step S4, institute
The method of stating still further comprises the step detecting described detection region.
9. the MEMS prepared based on the method one of claim 1 to 8 Suo Shu.
10. an electronic installation, including the MEMS described in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510089920.XA CN105984838A (en) | 2015-02-27 | 2015-02-27 | MEMS device and preparation method thereof and electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510089920.XA CN105984838A (en) | 2015-02-27 | 2015-02-27 | MEMS device and preparation method thereof and electronic device |
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| CN105984838A true CN105984838A (en) | 2016-10-05 |
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| CN201510089920.XA Pending CN105984838A (en) | 2015-02-27 | 2015-02-27 | MEMS device and preparation method thereof and electronic device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111943129A (en) * | 2019-05-16 | 2020-11-17 | 芯恩（青岛）集成电路有限公司 | MEMS wafer cutting alignment method and MEMS wafer |
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| US20110210435A1 (en) * | 2008-11-10 | 2011-09-01 | Nxp B.V. | Mems devices |
| CN101870451A (en) * | 2009-04-24 | 2010-10-27 | 台湾积体电路制造股份有限公司 | The manufacture method of integrated CMOS-MEMS device |
| CN102556945A (en) * | 2010-12-13 | 2012-07-11 | 台湾积体电路制造股份有限公司 | Method to prevent metal pad damage in wafer level package |
| CN103466541A (en) * | 2013-09-12 | 2013-12-25 | 上海矽睿科技有限公司 | Wafer level packaging method and wafer |
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| CN111943129A (en) * | 2019-05-16 | 2020-11-17 | 芯恩（青岛）集成电路有限公司 | MEMS wafer cutting alignment method and MEMS wafer |
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